PSMN4R0-30YL,115;中文规格书,Datasheet资料

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PSMN013-30LL,115;中文规格书,Datasheet资料

1.Product profile1.1General descriptionLogic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2Features and benefits⏹High efficiency due to low switching and conduction losses ⏹Small footprint for compact designs⏹Suitable for logic level gate drive sources1.3Applications⏹Battery protection ⏹DC-to-DC converters⏹Load switching ⏹Power ORing1.4Quick reference dataPSMN013-30LLN-channel DFN3333-8 30 V 13 m Ω logic level MOSFETRev. 5 — 8 December 2011Product data sheetTable 1.Quick reference data Symbol ParameterConditionsMin Typ Max Unit V DS drain-source voltage T j ≥25°C; T j ≤150°C --30V I D drain currentT mb =25°C; V GS =10V; see Figure 1--21A P tot total power dissipation T mb =25°C; see Figure 2--41W T j junction temperature-55-150°C Static characteristicsR DSondrain-source on-state resistanceV GS =4.5V;I D =5A; T j =25°C; see Figure 12-15.519m ΩV GS =10V; I D =5A;T j =100°C; see Figure 13--17.9m ΩV GS =10V; I D =5A;T j =25°C; see Figure 12-1113m ΩI DSSdrain leakage currentV DS =30V;V GS =0V; T j =125°C --50µA2.Pinning information3.Ordering informationDynamic characteristicsQ GD gate-drain charge V GS =10V; I D =8A;V DS =15V; see Figure 14; see Figure 15- 1.7-nC Q G(tot)total gate charge-12.2-nC V GS =4.5V;I D =8A; V DS =15V; see Figure 14; see Figure 15-6-nCAvalanche ruggedness E DS(AL)Snon-repetitive drain-source avalanche energyV GS =10V; T j(init)=25°C;I D =40A; V sup ≤30V; unclamped; R GS =50Ω--13mJTable 1.Quick reference data …continued Symbol Parameter ConditionsMin Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1S source SOT873-1 (DFN3333-8)2S source 3S source 4G gate5,6,7,8Dmounting base; connected to drainTransparent top view Table 3.Ordering informationType numberPackage NameDescriptionVersion PSMN013-30LLDFN3333-8plastic thermal enhanced very thin small outline package; no leads; 8 terminalsSOT873-14.Limiting valuesTable 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DS drain-source voltage T j ≥25°C; T j ≤150°C-30V V DGR drain-gate voltage T j ≤150°C; T j ≥25°C; R GS =20k Ω-30V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =100°C;see Figure 1-21A V GS =10V; T mb =25°C; see Figure 1-21A I DM peak drain current pulsed; t p ≤10µs; T mb =25°C; see Figure 3-169A P tot total power dissipation T mb =25°C; see Figure 2-41W T stg storage temperature -55150°C T j junction temperature -55150°C T sld(M)peak soldering temperature -260°C Source-drain diodeI S source current T mb =25°C-42A I SM peak source current pulsed; t p ≤10µs; T mb =25°C -169A Avalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energyV GS =10V; T j(init)=25°C;I D =40A; V sup ≤30V; unclamped; R GS =50Ω-13mJ5.Thermal characteristicsTable 5.Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base see Figure 4- 2.8 6.6K/W R th(j-a)thermal resistance from junction to ambient[1]-5660K/W[1]R th(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70 µm copper pad at 20°C ambienttemperature. In practice R th(j-a) will be determined by the customer’s PCB characteristics6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdownvoltage I D=0.25mA; V GS=0V; T j=-55°C27--V I D=0.25mA; V GS=0V; T j=25°C30--VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS; T j=150°C;see Figure 100.5--VI D=1mA; V DS=V GS; T j=25°C;see Figure 11; see Figure 101.3 1.72.15VI D=1mA; V DS=V GS; T j=-55°C;see Figure 10-- 2.55V I DSS drain leakage current V DS=30V; V GS=0V; T j=25°C-0.021µAV DS=30V; V GS=0V; T j=125°C--50µA I GSS gate leakage current V GS=20V;V DS=0V; T j=25°C-5100nAV GS=-20V; V DS=0V; T j=25°C-5100nAR DSon drain-source on-stateresistance V GS=4.5V;I D=5A;T j=25°C;seeFigure 12-15.519mΩV GS=10V;I D=5A; T j=100°C;see Figure 13--17.9mΩV GS=10V;I D=5A; T j=150°C;see Figure 13-19.823.4mΩV GS=10V;I D=5A; T j=25°C;see Figure 12-1113mΩR G internal gate resistance (AC)f=1MHz- 1.37-ΩDynamic characteristicsQ G(tot)total gate charge I D=8A; V DS=15V; V GS=10V;see Figure 14; see Figure 15-12.2-nCI D=8A; V DS=15V; V GS=4.5V;see Figure 14; see Figure 15-6-nCI D=0A; V DS=0V;V GS=10V-11.4-nCQ GS gate-source charge I D=8A; V DS=15V; V GS=10V;see Figure 14- 2.3-nCQ GS(th)pre-threshold gate-sourcecharge- 1.3-nCQ GS(th-pl)post-threshold gate-sourcecharge-1-nCQ GD gate-drain charge I D=8A; V DS=15V; V GS=10V;see Figure 14; see Figure 15- 1.7-nCV GS(pl)gate-source plateau voltage I D=8A; V DS=15V; see Figure 14;see Figure 15- 2.7-VC iss input capacitance V DS=15V; V GS=0V; f=1MHz;T j=25°C;see Figure 16-768-pFC oss output capacitance-144-pF C rss reverse transfer capacitance-67-pFt d(on)turn-on delay time V DS =15V; R L =2Ω; V GS =10V; R G(ext)=4.7Ω; T j =25°C-13-ns t r rise time-9-ns t d(off)turn-off delay time -15-ns t f fall time-5.1-ns Source-drain diodeV SD source-drain voltage I S =5A; V GS =0V;T j =25°C; see Figure 17-0.85 1.2V t rr reverse recovery time I S =8A; dI S /dt =100A/µs; V GS =0V; V DS =15V-20.7-ns Q rrecovered charge-10.6-nCTable 6.Characteristics …continuedSymbol Parameter ConditionsMin Typ Max Unit分销商库存信息: NXPPSMN013-30LL,115。

VB30120SG-E34W;V30120SG-E34W;VF30120SG-E34W;VI30120SG-E34W;中文规格书,Datasheet资料

V30120SG, VF30120SG, VB30120SG, VI30120SGVishay General SemiconductorDocument Number: 89011For technical questions within your region, please contact one of the following:High-Voltage Trench MOS Barrier Schottky RectifierUltra Low V F = 0.47 V at I F = 5 AFEATURES•Trench MOS Schottky technology •Low forward voltage drop, low power losses •High efficiency operation•Meets MSL level 1, per J -STD-020, LFmaximum peak of 245 °C (for TO-263AB package)•Solder bath temperature 275 °C maximum, 10 s,per J ESD 22-B106 (for TO-220AB, ITO-220AB,and TO-262AA package) •Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONSFor use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.MECHANICAL DATACase: TO-220AB, ITO-220AB, TO-263AB and TO-262AAMolding compound meets UL 94 V-0 flammability ratingBase P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test Polarity: As markedMounting Torque: 10 in-lbs maximumPRIMARY CHARACTERISTICSI F(AV)30 A V RRM 120 V I FSM 220 A V F at I F = 30 A 0.81 V T J max.150 °C123NCA KMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAME T ERSYMBOL V30120SGVF30120SG VB30120SGVI30120SGUNI TMaximum repetitive peak reverse voltage V RRM 120VMaximum average forward rectified current (fig. 1)I F(AV) 30 APeak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 220 ANon-repetitive avalanche energy at T J = 25 °C, L = 60 mH E AS 175mJ Peak repetitive reverse currentat t p = 2 µs, 1 kHz, T J = 38 °C ± 2 °C I RRM 0.5 A Voltage rate of change (rated V R )dV/dt 10 000V/µs Isolation voltage (ITO-220AB only)from terminal to heatsink t = 1 minV AC 1500V Operating junction and storage temperature rangeT J , T STG- 40 to + 150°CV30120SG, VF30120SG, VB30120SG, VI30120SGVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89011Notes(1)Pulse test: 300 µs pulse width, 1 % duty cycle(2) Pulse test: Pulse width ≤ 40 msRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAME ER T ES T CONDI T IONS SYMBOL T YP.MAX.UNI TBreakdown voltageI R = 1.0 mA T A = 25 °C V BR120 (minimum)-VInstantaneous forward voltage (1)I F = 5 A I F = 15 A I F = 30 A T A = 25 °CV F0.540.801.16--1.28VI F = 5 A I F = 15 A I F = 30 A T A = 125 °C 0.470.660.81--0.90Reverse current (2)V R = 90 VT A = 25 °CT A = 125 °C I R1313--µA mA V R = 120 VT A = 25 °C T A = 125 °C-2350055µA mATHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAME T ERSYMBOL V30120SG VF30120SGVB30120SGVI30120SGUNI T Typical thermal resistanceR θJC1.64.01.61.6°C/WORDERING INFORMATION (Example)PACKAGE PREFERRED P/N UNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220AB V30120SG-E3/4W 1.884W 50/tube T ube ITO-220AB VF30120SG-E3/4W 1.754W 50/tube T ube TO-263AB VB30120SG-E3/4W 1.394W 50/tube T ube TO-263AB VB30120SG-E3/8W 1.398W 800/reel T ape and reelTO-262AAVI30120SG-E3/4W1.454W50/tubeT ubeFigure 1. Forward Current Derating CurveFigure 2. Forward Power Loss CharacteristicsV30120SG, VF30120SG, VB30120SG, VI30120SGVishay General SemiconductorDocument Number: 89011For technical questions within your region, please contact one of the following:Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Characteristics Figure 5. Typical Junction CapacitanceFigure 6. Typical Transient Thermal ImpedanceFigure7. Typical Transient Thermal ImpedanceV30120SG, VF30120SG, VB30120SG, VI30120SGVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 89011PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTORVB30120SG-E3/4W V30120SG-E3/4W VF30120SG-E3/4W VI30120SG-E3/4W VB30120SG-E3/8W。

VBPW34S;VBPW34SR;中文规格书,Datasheet资料

Silicon PIN PhotodiodeDESCRIPTIONVBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible and near infrared radiation.FEATURES•Package type: surface mount•Package form: GW, RGW•Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2•Radiant sensitive area (in mm2): 7.5•High photo sensitivity•High radiant sensitivity•Suitable for visible and near infrared radiation•Fast response times•Angle of half sensitivity: ϕ = ± 65°•Floor life: 168 h, MSL 3, acc. J-STD-020•Lead (Pb)-free reflow soldering•Compliant to R oHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC•Halogen-free according to IEC 61249-2-21 definition APPLICATIONS•High speed photo detectorNote•Test conditions see table “Basic Characteristics”Note•MOQ: minimum order quantity21733 VBP W34SVBP W34SRPRODUCT SUMMARYCOMPONENT I ra (μA)ϕ (deg)λ0.1 (nm)V BPW34S55± 65430 to 1100V BPW34SR55± 65430 to 1100ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORM V BPW34S Tape and reel MOQ: 1000 pcs, 1000 pcs/reel GullwingV BPW34SR Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R60V Power dissipation T amb≤ 25 °C P V215mW Junction temperature T j100°C Operating temperature range T amb- 40 to + 100°C Storage temperature range T stg- 40 to + 100°C Soldering temperature Acc. reflow solder profile fig. 8T sd260°C Thermal resistance junction/ambient R thJA350K/WBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient TemperatureBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLMIN.TYP.MAX.UNIT Forward voltage I F = 50 mA V F 11.3V Breakdown voltage I R = 100 μA, E = 0V (BR)60VReverse dark current V R = 10 V, E = 0I ro 230nA Diode capacitance V R = 0 V, f = 1 MHz, E = 0C D 70pF V R = 3 V, f = 1 MHz, E = 0C D 2540pF Open circuit voltageE e = 1 mW/cm 2, λ = 950 nm V o 350mV Temperature coefficient of V o E e = 1 mW/cm 2, λ = 950 nm TK Vo - 2.6mV/K Short circuit currentE e = 1 mW/cm 2, λ = 950 nm I k 50μA Temperature coefficient of I k E e = 1 mW/cm 2,λ = 950 nm TK Ik 0.1%/K Reverse light current E e = 1 mW/cm 2, λ = 950 nm,V R = 5 VI ra 4555μA Angle of half sensitivity ϕ± 65deg Wavelength of peak sensitivity λp 940nm Range of spectral bandwidth λ0.1430 to 1100nm Noise equivalent power V R = 10 V, λ = 950 nm NEP 4 x 10-14W/√Hz Rise time V R = 10 V, R L = 1 k Ω,λ = 820 nm t r 100ns Fall timeV R = 10 V, R L = 1 k Ω,λ = 820 nmt f100nsFig. 3 - Reverse Light Current vs. IrradianceFig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 5 - Diode Capacitance vs. Reverse VoltageFig. 6 - Relative Spectral Sensitivity vs. WavelengthFig. 7 - Relative Radiant Sensitivity vs. Angular DisplacementPACKAGE DIMENSIONS FOR VBPW34S in millimetersPACKAGE DIMENSIONS FOR VBPW34SR in millimetersTAPING DIMENSIONS FOR VBPW34S in millimetersTAPING DIMENSIONS FOR VBPW34SRin millimetersREEL DIMENSIONS FOR VBPW34S AND VBPW34SR in millimeters SOLDER PROFILEFig. 8 - Lead (Pb)-free Reflow Solder Profileacc. J-STD-020DRYPACKDevices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFETime between soldering and removing from MBB must not exceed the time indicated in J-STD-020:Moisture sensitivity: level 3Floor life: 168 hConditions: T amb < 30 °C, RH < 60 %DRYINGIn case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions:192 h at 40 °C (+ 5 °C), RH < 5 %or96 h at 60 °C (+ 5 °C), RH < 5 %.Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.分销商库存信息:VISHAYVBPW34S VBPW34SR。

TF卡座规格大全

4/31!4/31!5/563/512/311/:61/222/1126/11MSPN09A REV.SHEET SCALE .X°± 2°X.°± 5°.XX°± 1°.XXX°± 0.5°.XXX± 0.10.XX± 0.20.X± 0.30X.± 0.40PROJ.UNIT APPROVAL CHECKED TITLE DRAWN DWG NO.B C D E F G H I I H G F ED AC B Proconn Technology Co., Ltd.J J PART NO.mmGENERAL TOLERANCE CUSTOMER DRAWING PROCESS COMPLIANT Pb -01-D GND WITHOUT CARD CARD INSERTED (#10)(#9) PATENTS PENDING. ARE COVERED BY PATENTS AND/OR 2.ALL RIGHTS RESERVED,PRODUCTS )TE!DBSE!DJSDVU!;(#9(#10)GND C/D 1.THIS PRODUCT DOESN'T CONTAIN ENVIRONMENTAL HAZARDOUS MATERIALS PER DIRECTIVE 2002/95/EC FOR RoHS.C/D Micro SD Normal push-push Type Connector 4:1D /21MSPN09-X0-0000D M B Dbse!Tmpu .B.1/96!2/21!2/:11/7122/261/211/16.1/16,B!!)23!;!2* A -- CONTACT UNLEAD PLATING: A:GOLD FLASH C:10ȝ" GOLD NOTES : 1. MATERIAL : INSULATOR : HIGH TEMPERATURE THERMOPLASTIC FLAMMABILITY RARING : UL94V-0 COLOR : BLACK CONTACT : COPPER ALLOYS COVER : COPPER ALLOYS 2. CONTACT AREA PLATING : GOLD OVER Ni C/D : MICRO SD CARD CARD DETECT INDICATION 3. P/N : MSPN09- X0-0000T A 1/4B C D D EN030807 BOB :/61:/:1y3!2/21!9/111/911/41QSPDPOO YYYYYYYEBUF!DPEFQSPDPOO!MPHP!!!!DBSE DFOUFS!MJOF 25/81.X°± 2°X.°± 5°.XX°± 1°.XXX°± 0.5°.XXX± 0.10.XX± 0.20.X± 0.30X.± 0.40UNIT APPROVAL CHECKED TITLE DRAWN Proconn Technology Co., Ltd.PART NO.GENERAL TOLERANCECUSTOMER DRAWING Micro SD Normal push-push MSPN09-X0-0000YYYYYYY YYYYYYYNOTES :1.Material :Housing/Slide : High temperature thermoplastic,UL94-V0. Housing Color : Black/Slide Color11.10 0.05NOTES :1.Material :Housing/Slide : High temperature thermoplastic,UL94-V0. Housing Color : Black/Slide Color11.10 0.05OPUFT!;!2/!NBUFSJBM!;!!!!!JOTVMBUPS!;!IJHI!UFNQFSBUVSF!UIFSNPQMBTUJD!!!!GMBNNBCJMJUZ!SBSJOH!;!VM:5W.1!DPMPS!;!CMBDLProconn Technology Co., Ltd.MICRO SD REV. PUSH-PUSH TYPE (H=1.8mm)DWG NO.MSPR09-15-BMICRO SD REV. PUSH-PUSH TYPE (H=1.8mm).X°± 2°X.°± 5°.XX°± 1°.XXX°± 0.5°TITLE Proconn Technology Co., Ltd.PART NO.GENERAL TOLERANCECUSTOMER DRAWING2/96²1/2²1/21/4²1/23/21.THIS PRODUCT DOESN'T CONTAIN ENVIRONMENTAL HAZARDOUSmm .nd hold on the products sur fa ce DWG NO.Proconn Technology Co., Ltd.1.THI S PRODUCT DOE S N'T CONT A M S PN10-09-0-4000D Push Nor ma l Type(H=1.50mm ).X °± 2°X .°± 5°.XX °± 1°.XXX °± 0.5°TITLEProconn Technology Co., Ltd.PART NO.L TOLER A NCETOMER DR A WING1.THI S PRODUCT DOE S N'T CONT A M SInput M a teri a l Direction1.THI S PRODUCT DOE S N'T CONT Arton P a per Connector Other bel P a perReel P S rrier T a pe P Sˠ˦˛ˡ˃ˋˀ˔˃ˀ˃˃˄ˆˠ˦˛ˡ˃ˋˀ˔˃ˀ˃˃˄ˆˠ˦˛ˡ˃ˋˀ˔˃ˀ˃˃˄ˆ。

VNS3NV04DP-E;VNS3NV04DPTR-E;中文规格书,Datasheet资料

3.2 Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3 Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16
4.3 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

DATASHEET (TP4054 线性锂离子电池充电器)

间，并应通过至少一个 1μF 电容器进行旁路。当 VCC 降至 BAT 引脚电压的 30mV 以内，TP4054 进入停机模式，从而使 IBAT 降至 2μA 以下。 PROG（引脚 5）：充电电流设定、充电电流监控和停机引脚。在该引脚与地之间连接一个精度为 1%的电阻器 RPROG 可以设定充电电流。当在恒定电流模式下进行充电时，引脚的电压被维持在 1V。 PROG 引脚还可用来关断充电器。将设定电阻器与地断接，内部一个 2.5μA 电流将 PROG 引脚拉至高电平。当该引脚的电压达到 2.70V 的停机门限电压时，充电器进入停机模式，充电停止且输入电源电流降至 45μA。重新将 RPROG 与地相连将使充电器恢复正常操作状态。
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DATASHEET
(TP4054 线性锂离子电池充电器)
1

TP4054 线性锂离子电池充电器
描述
TP4054 是一款完整的单节锂离子电池采用恒定电流/恒定电压线性充电器。其 SOT 封装与较少的外部元件数目使得 TP4054 成为便携式应用的理想选择。 TP4054 可以适合 USB 电源和适配器电源工作。由于采用了内部 PMOSFET 架构，加上防倒充电路，所以不需要外部检测电阻器和隔离二极管。热反馈可对充电电流进行调节，以便在大功率操作或高环境温度条件下对芯片温度加以限制。充电电压固定于 4.2V，而充电电流可通过一个电阻器进行外部设置。当充电电流在达到最终浮充电压之后降至设定值 1/10 时， TP4054 将自动终止充电循环。当输入电压（交流适配器或 USB 电源）被拿掉时，TP4054 自动进入一个低电流状态，将电池漏电流降至 2uA 以下。也可将 TP4054 置于停机模式，以而将供电电流降至 45uA。TP4054 的其他特点包括充电电流监控器、欠压闭锁、自动再充电和一个用于指示充电结束和输入电压接入的状态引脚。

PSMN1R5-30YLC

1.Product profile1.1General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2Features and benefitsHigh reliability Power SO8 package, qualified to 175°C Optimised for 4.5V Gate drive utilising NextPower Superjunction technologyUltra low QG, QGD, and QOSS for high system efficiencies at low and high loads Ultra low Rdson and low parasitic inductance1.3ApplicationsDC-to-DC converters Lithium-ion battery protection Load switchingPower OR-ing Server power supplies Sync rectifier1.4Quick reference dataPSMN1R5-30YLCN-channel 30 V 1.55m Ω logic level MOSFET in LFPAK using NextPower technologyRev. 2 — 17 May 2011Product data sheetTable 1.Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C --30V I D drain current T mb =25°C; V GS =10V; see Figure 1[1]--100A P tot total power dissipation T mb =25°C; see Figure 2--179W T jjunction temperature -55-175°CStatic characteristics R DSondrain-sourceon-state resistanceV GS =4.5V;I D =25A;T j =25°C; see Figure 12- 1.65 2.05m ΩV GS =10V; I D =25A; T j =25°C; see Figure 12- 1.31.55m Ω[1]Continuous current is limited by package.2.Pinning information3.Ordering information4.Marking[1]% = placeholder for manufacturing site codeDynamic characteristicsQ GDgate-drain chargeV GS =4.5V; I D =25A; V DS =15V; see Figure 14; see Figure 15-8.6-nCQ G(tot)total gate charge V GS =4.5V; I D =25A; V DS =15V; see Figure 14; see Figure 15-30-nCTable 1.Quick reference data …continued SymbolParameter ConditionsMin Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1S source SOT669 (LFPAK; Power-SO8)2S source 3S source 4G gatembDmounting base; connected to drainmb1234Table 3.Ordering informationType numberPackage NameDescriptionVersion PSMN1R5-30YLCLFPAK; Power-SO8plastic single-ended surface-mounted package; 4 leadsSOT669Table 4.Marking codesType number Marking code [1]PSMN1R5-30YLC1C530L5.Limiting values[1]Continuous current is limited by package.Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit V DS drain-source voltage 25°C ≤T j ≤175°C-30V V DGR drain-gate voltage 25°C ≤T j ≤175°C; R GS =20k Ω-30V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =25°C; see Figure 1[1]-100A V GS =10V; T mb =100°C; see Figure 1[1]-100A I DM peak drain current pulsed; t p ≤10µs; T mb =25°C; see Figure 4-1008A P tot total power dissipation T mb =25°C; see Figure 2-179W T stg storage temperature -55175°C T j junction temperature -55175°C T sld(M)peak soldering temperature -260°C V ESD electrostatic discharge voltage MM (JEDEC JESD22-A115)1000-V Source-drain diodeI S source current T mb =25°C[1]-100A I SM peak source current pulsed; t p ≤10µs; T mb =25°C -1008A Avalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energyV GS =10V; T j(init)=25°C; I D =100A; V sup ≤30V; R GS =50Ω; unclamped; see Figure 3-147mJ6.Thermal characteristicsTable 6.Thermal characteristicsSymbol ParameterConditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basesee Figure 5-0.710.84K/W7.CharacteristicsTable 7.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdownvoltage I D=250µA;V GS=0V; T j=25°C30--V I D=250µA;V GS=0V; T j=-55°C27--VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS; T j=25°C;see Figure 10; see Figure 111.05 1.51 1.95VI D=10mA;V DS=V GS; T j=150°C0.5--VI D=1mA; V DS=V GS; T j=-55°C-- 2.25V I DSS drain leakage current V DS=30V;V GS=0V; T j=25°C--1µAV DS=30V;V GS=0V; T j=150°C--100µA I GSS gate leakage current V GS=16V; V DS=0V; T j=25°C--100nAV GS=-16V;V DS=0V; T j=25°C--100nAR DSon drain-source on-stateresistance V GS=4.5V;I D=25A;T j=25°C;see Figure 12- 1.65 2.05mΩV GS=4.5V;I D=25A;T j=150°C;see Figure 12; see Figure 13-- 3.4mΩV GS=10V; I D=25A; T j=25°C;see Figure 12- 1.3 1.55mΩV GS=10V; I D=25A; T j=150°C;see Figure 12; see Figure 13-- 2.6mΩR G gate resistance f=1MHz- 1.05 2.1ΩDynamic characteristicsQ G(tot)total gate charge I D=25A; V DS=15V;V GS=10V;see Figure 14; see Figure 15-65-nCI D=25A; V DS=15V;V GS=4.5V;see Figure 14; see Figure 15-30-nCI D=0A;V DS=0V; V GS=10V-53-nCQ GS gate-source charge I D=25A; V DS=15V;V GS=4.5V;see Figure 14; see Figure 15-9.7-nCQ GS(th)pre-threshold gate-sourcecharge- 6.6-nCQ GS(th-pl)post-threshold gate-sourcecharge- 3.1-nC Q GD gate-drain charge-8.6-nC V GS(pl)gate-source plateau voltage I D=25A;V DS=15V; see Figure 14;see Figure 15- 2.53-VC iss input capacitance V DS=15V;V GS=0V; f=1MHz;T j=25°C;see Figure 16-4044-pFC oss output capacitance-860-pF C rss reverse transfer capacitance-287-pFt d(on)turn-on delay time V DS=15V;R L=0.6Ω; V GS=4.5V;R G(ext)=4.7Ω-33-nst r rise time-62-ns t d(off)turn-off delay time-62-ns t f fall time-38-nsQ ossoutput chargeV GS =0V;V DS =15V; f =1MHz; T j =25°C-23-nCSource-drain diode V SD source-drain voltage I S =25A;V GS =0V;T j =25°C; see Figure 17-0.8 1.1V t rr reverse recovery time I S =25A;dI S /dt =-100A/µs; V GS =0V;V DS =15V-41-ns Q r recovered charge -43-nC t a reverse recovery rise time V GS =0V;I S =25A;dI S /dt =-100A/µs; V DS =15V; see Figure 18-24-ns t breverse recovery fall time-17-nsTable 7.Characteristics …continuedSymbol Parameter ConditionsMin Typ Max Unit8.Package outlinePlastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads SOT669Fig 19.Package outline SOT669 (LFPAK; Power-SO8)9.Revision historyTable 8.Revision historyDocument ID Release date Data sheet status Change notice SupersedesPSMN1R5-30YLC v.220110517Product data sheet-PSMN1R9-25YLC v.1 Modifications:•Various changes to content.PSMN1R9-25YLC v.120110502Product data sheet--10.Legal information10.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest productstatus information is available on the Internet at URL .10.2DefinitionsPreview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia salesoffice. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product isdeemed to offer functions and qualities beyond those described in the Product data sheet.10.3DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia.Right to make changes — Nexperia reserves the right to makechanges to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use ofNexperia products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications andproducts planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications andthe products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Document status [1][2] Product status [3] DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet Production This document contains the product specification.Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use ofnon-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of theproduct for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.10.4TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.11.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@12.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1General description . . . . . . . . . . . . . . . . . . . . . .1 1.2Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 6Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 8Package outline. . . . . . . . . . . . . . . . . . . . . . . . .11 9Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12 10Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 10.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 10.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 10.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14© Nexperia B.V. 2017. All rights reserved11Contact information. . . . . . . . . . . . . . . . . . . . . .14 For more information, please visit: For sales office addresses, please send an email to: salesaddresses@ Date of release:。

PSMN7R0-100ES,127;中文规格书,Datasheet资料

PSMN7R0-100ESN-channel 100V 6.8 mΩ standard level MOSFET in I2PAK.Rev. 03 — 23 February 2010Product data sheet 1.Product profile1.1General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product isdesigned and qualified for use in a wide range of industrial, communications and domesticequipment.1.2Features and benefitsHigh efficiency due to low switchingand conduction lossesSuitable for standard level gate drive1.3ApplicationsDC-to-DC converters Load switching Motor controlServer power supplies1.4Quick reference dataTable 1.Quick referenceSymbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j≥25°C; T j≤175°C--100VI D drain current T mb=25°C; V GS=10V;see Figure 1[1]--100AP tot total powerdissipationT mb=25°C; see Figure 2--269W T j junction temperature-55-175°C Avalanche ruggednessE DS(AL)S non-repetitivedrain-sourceavalanche energy V GS=10V; T j(init)=25°C;I D=100A; V sup≤100V;unclamped; R GS=50Ω--315mJDynamic characteristicsQ GD gate-drain charge V GS=10V; I D=25A;V DS=50V; see Figure 15and 14-36-nCQ G(tot)total gate charge V GS=10V; I D=25A;V DS=50V; see Figure 14and 15-125-nC[1]Continuous current is limited by package2.Pinning information3.Ordering informationStatic characteristics R DSondrain-sourceon-state resistanceV GS =10V; I D =15A; T j =100°C; see Figure 12--12m ΩV GS =10V; I D =15A; T j =25°C; see Figure 13- 5.46.8m ΩTable 1.Quick referenceSymbol Parameter ConditionsMinTyp Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1G gate SOT226 (I2PAK)2D drain 3S sourcembDmounting base; connected to drain321mbTable 3.Ordering informationType numberPackage NameDescriptionVersion PSMN7R0-100ES I2PAKplastic single-ended package (I2PAK); TO-262SOT2264.Limiting values[1]Continuous current is limited by packageTable 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DS drain-source voltage T j ≥25°C; T j ≤175°C-100V V DGR drain-gate voltage T j ≤175°C; T j ≥25°C; R GS =20k Ω-100V V GS gate-source voltage -2020V I D drain current V GS =10V; T mb =100°C; see Figure 1-85A V GS =10V; T mb =25°C; see Figure 1[1]-100A I DM peak drain current t p ≤10µs; pulsed; T mb =25°C; see Figure 3-475A P tot total power dissipation T mb =25°C; see Figure 2-269W T stg storage temperature -55175°C T j junction temperature -55175°C T sld(M)peak soldering temperature -260°C Source-drain diodeI S source current T mb =25°C;[1]-100A I SM peak source currentt p ≤10µs; pulsed; T mb =25°C-475A Avalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energy V GS =10V; T j(init)=25°C; I D =100A; V sup ≤100V; unclamped; R GS =50Ω-315mJ5.Thermal characteristicsTable 5.Thermal characteristics Symbol ParameterConditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basesee Figure 4-0.30.56K/W R th(j-a)thermal resistance from junction to ambientvertical in free air-60-K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-sourcebreakdown voltage I D=0.25mA;V GS=0V; T j=-55°C90--V I D=0.25mA;V GS=0V; T j=25°C100--VV GS(th)gate-source thresholdvoltage I D=1mA; V DS = V GS; T j=175°C; see Figure 101--V I D=1mA; V DS = V GS; T j=25°C;see Figure 11and 10234V I D=1mA; V DS = V GS; T j=-55°C;see Figure 10-- 4.8VI DSS drain leakage current V DS=100V; V GS=0V;T j=125°C--150µAV DS=100V; V GS=0V;T j=25°C-0.084µA I GSS gate leakage current V GS=20V; V DS=0V; T j=25°C-10100nAV GS=-20V;V DS=0V; T j=25°C-10100nAR DSon drain-source on-stateresistance V GS=10V; I D=15A; T j=100°C; see Figure 12--12mΩV GS=10V; I D=15A; T j=175°C; see Figure 12-1519mΩV GS=10V; I D=15A; T j=25°C;see Figure 13- 5.4 6.8mΩR G internal gate resistance(AC)f=1MHz-0.74-ΩDynamic characteristicsQ G(tot)total gate charge I D=25A;V DS=50V;V GS=10V;see Figure 14and 15-125-nCI D=0A;V DS=0V; V GS=10V-100-nC Q GS gate-source charge I D=25A;V DS=50V;V GS=10V;see Figure 15and 14-28-nCQ GS(th)pre-thresholdgate-source chargeI D=25A; V DS=50V;V GS=10V;see Figure 15-19.4-nCQ GS(th-pl)post-thresholdgate-source charge-9-nCQ GD gate-drain charge I D=25A;V DS=50V;V GS=10V;see Figure 15and 14-36-nCV GS(pl)gate-source plateauvoltageV DS=50V;see Figure 15 and 14- 4.3-VC iss input capacitance V DS=50V;V GS=0V; f=1MHz; T j=25°C;see Figure 16-6686-pFC oss output capacitance-438-pF C rss reverse transfercapacitance-272-pFt d(on)turn-on delay time V DS=50V;R L=2Ω; V GS=10V;R G(ext)=4.7Ω; T j=25°C -34.6-nst r rise time-45.6-ns t d(off)turn-off delay time-103.9-ns t f fall time-49.5-nsSource-drain diodeV SD source-drain voltage I S =25A;V GS =0V; T j =25°C; see Figure 17-0.8 1.2V t rr reverse recovery time I S =25A;dI S /dt =100A/µs; V GS =0V; V DS =50V-64-ns Q rrecovered charge-167-nCTable 6.Characteristics …continued Symbol ParameterConditionsMin Typ Max Unit分销商库存信息: NXPPSMN7R0-100ES,127。

普瑞蓝功率芯片自制中文规格书

普瑞蓝功率芯片规格书BXCE45×45MILB XCE 45 x 45 mil 特点•高流明输出和效率•使用寿命长•增加目前蔓延痕迹高效和统一的照明•100％测试和排序的波长，功率与正向电压•朗伯发射模式•兼容焊锡膏，焊锡瓶坯或银环氧裸片粘接•交付中等粘性的蓝色胶带（20CM±为10mm×20厘米±10MM）应用范围•普通照明•路灯•便携式照明•建筑照明•定向照明•广域照明•显示背光•数码相机闪光灯•汽车照明•白光LEDLED芯片结构图产品命名方式：B XC E 4 5 4 5 X X X – Y Y – ZBXCE:指定产品系列4545:指定芯片尺寸（45 MIL×45 MIL）XXX:指定主导波长YY:指定辐射功率Z:指定正向电压机械尺寸6。

磁带应存放在垂直方向，而不是水平堆放。

磁带堆叠可以放置过大的压力，对LED的焊盘，导致焊线实力降低。

环保法规:普瑞致力于固态照明市场提供环保产品。

普瑞BXCE4545蓝色功率芯片是符合欧盟对电子设备的指令，即RoHS指令对有害物质的限制。

普瑞不会故意对BXCE4545模具产品添加以下限制材料：铅，汞，镉，六价铬，多溴联苯（PBB）或多溴二苯醚（PBDE）关于普瑞：普瑞是由40亿美金升值到100亿美金的全球照明行业的技术和解决方案的领先开发商和制造商。

总部设在加利福尼亚州利弗莫尔，普瑞是固态照明（SSL）的先驱，发光二极管（LED）技术，扩大市场，拉低了LED照明系统的成本。

普瑞的专利灯源技术取代与整合，固态照明解决方案，使灯具和照明设备制造商，以高的性能和迅速增长的能源效率的白色光（如白炽灯，卤素灯，荧光灯和高强度放电照明）传统技术内部和外部照明市场，包括路灯，商业照明和消费电子应用。

普瑞是与500多个专利申请或授予全球唯一垂直整合的LED制造商和专门开发固态光源照明行业设计的解决方案。

NCP3420DR2G;NCP3420MNR2G;中文规格书,Datasheet资料

NCP3420MOSFET Driver with Dual Outputs for Synchronous Buck ConvertersThe NCP3420 is a single Phase 12 V MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 30 ns propagation delay and a 20 ns transition time.With a wide operating voltage range, high or low side MOSFETgate drive voltage can be optimized for the best efficiency. Internal adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.The floating top driver design can accommodate VBST voltages as high as 35 V, with transient voltages as high as 40 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection. Features•Thermal Shutdown for System Protection•Internal Pulldown Resistor Suppresses Transient Turn On of Either MOSFET•Anti Cross−Conduction Protection Circuitry•One Input Signal Controls Both the Upper and Lower Gate Outputs •Output Disable Control Turns Off Both MOSFETs •Complies with VRM10.x and VRM11.x Specifications •Undervoltage Lockout•Thermally Enhanced Package Available•These are Pb−Free DevicesDevice Package Shipping†ORDERING INFORMATIONSO−8(Pb−Free)2500 Tape & Reel NCP3420DR2GA= Assembly LocationL= Wafer LotY= YearW= Work WeekG= Pb−Free PackageMARKINGDIAGRAMSPIN CONNECTIONSSO−8D SUFFIXCASE 751DRVLPGNDSWNDRVH†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.DFN8MN SUFFIXCASE 506BJDFN8(Pb−Free)3000 Tape & Reel NCP3420MNR2GDRVLV CCPGNDODSWNINDRVHBST(Top View)3420ALYW GG18Figure 1. Block DiagramV CC DRVH BSTSWNDRVL PGNDODINPIN DESCRIPTIONSO −8DFN8Symbol Description11BSTUpper MOSFET Floating Bootstrap Supply. A capacitor connected between BST and SW pins holds this bootstrap voltage for the high −side MOSFET as it is switched. The recommended capacitor value is between 100 nF and 1.0 m F. An external diode is required with the NCP3420.22IN Logic −Level Input. This pin has primary control of the drive outputs.33OD Output Disable. When low, normal operation is disabled forcing DRVH and DRVL low.44V CC Input Supply. A 1.0 m F ceramic capacitor should be connected from this pin to PGND.55DRVL Output drive for the lower MOSFET.66PGND Power Ground. Should be closely connected to the source of the lower MOSFET.77SWN Switch Node. Connect to the source of the upper MOSFET.88DRVHOutput drive for the upper MOSFET.MAXIMUM RATINGSRating Value Unit Operating Ambient Temperature, T A0 to 85°C Operating Junction Temperature, T J (Note 1)0 to 150°CPackage Thermal Resistance: SO−8Junction−to−Case, R q JCJunction−to−Ambient, R q JA (2−Layer Board) Package Thermal Resistance: DFN8 (Note 2) Junction−to−Case, R q JC (From die to exposed pad) Junction−to−Ambient, R q JA 451237.555°C/W°C/W°C/W°C/WStorage Temperature Range, T S−65 to 150°C Lead Temperature Soldering (10 sec): Reflow (SMD styles only)Pb−Free (Note 3)260 peak°C JEDEC Moisture Sensitivity Level SO−8 (260 peak profile)1−Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Internally limited by thermal shutdown, 150°C min.2. 2 layer board, 1 in2 Cu, 1 oz thickness.3.60−180 seconds minimum above 237°C.NOTE:This device is ESD sensitive. Use standard ESD precautions when handling.MAXIMUM RATINGSPin Symbol Pin Name V MAX V MIN V CC Main Supply Voltage Input15 V−0.3 VPGND Ground0 V0 VBST Bootstrap Supply Voltage Input35 V wrt/PGND40 V v 50 ns wrt/PGND15 V wrt/SW−0.3 V wrt/SWSW Switching Node(Bootstrap Supply Return)35 V DC40 V < 50 ns−5.0 V DC−10 V < 200 nsDRVH High−Side Driver Output BST + 0.3 V35 V v 50 ns wrt/PGND15 V wrt/SW−0.3 V wrt/SW−2.0 V < 200 ns wrt/SWDRVL Low−Side Driver Output V CC + 0.3 V−0.3 V DC−5.0 V < 200 ns IN DRVH and DRVL Control Input 6.5 V−0.3 VOD Output Disable 6.5 V−0.3 V NOTE:All voltages are with respect to PGND except where noted.ELECTRICAL CHARACTERISTICS (Note 4)(V CC = 12 V, T A = 0°C to +85°C, T J = 0°C to +125°C unless otherwise noted.) Characteristic Symbol Condition Min Typ Max Unit SupplySupply Voltage Range V CC− 4.6−13.2V Supply Current I SYS BST = 12 V, IN = 0 V−0.7 6.0mA OD InputInput Voltage High V OD_HI− 2.0−−V Input Voltage Low V OD_LO−−−0.8V Hysteresis−−−400−mV Input Current−No internal pull−up or pull−down resistors−1.0−+1.0m APropagation Delay Time t pdlODt pdhOD − 1.01.025254545nsnsPWM InputInput Voltage High V PWM_HI− 2.0−−V Input Voltage Low V PWM_LO−−−0.8V Hysteresis−−−500−mV Input Current−No internal pull−up or pull−down resistors−1.0−+1.0m A High−Side DriverOutput Resistance, Sourcing Current−V BST− V SW = 12 V (Note 6)− 1.8 3.0W Output Resistance, Sinking Current−V BST− V SW = 12 V (Note 6)− 1.0 2.5W SW Pulldown Resitance−SW to PGND10−55k W Output Resistance, Unbiased−BST−SW = 0 V10−55k WTransition Times t rDRVHt fDRVH V BST− V SW = 12 V, C LOAD = 3.0 nF(See Figure 3)−−16113025nsnsPropagation Delay (Note 5)t pdhDRVHt pdlDRVH V BST− V SW = 12 V, C LOAD = 3.0 nF(See Figure 3)201030304545nsnsLow−Side DriverOutput Resistance, Sourcing Current−V CC = 12 V (Note 6)− 1.8 3.0W Output Resistance, Sinking Current−V CC− PGND = 12 V (Note 6)− 1.0 2.5W Output Resistance, Unbiased−V CC = PGND10−55k W Timeout Delay−DRVH−SW = 0−85−nsTransition Times t rDRVLt fDRVL V BST− V SW = 12 V, C LOAD = 3.0 nF(See Figure 3)−−16113025nsnsPropagation Delay (Note 5)t pdhDRVLt pdlDRVLV BST− V SW = 12 V, C LOAD = 3.0 nF(Note 6, t pdhDRVL Only) (See Figure 3)151030304545nsnsUndervoltage LockoutUVLO Startup−− 3.9 4.3 4.5V UVLO Shutdown−− 3.7 4.1 4.3V Hysteresis−−0.10.20.4V Thermal ShutdownOver Temperature Protection−(Note 6)150170−°C Hysteresis(Note 6)−20−°C 4.All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC).5.For propagation delays, “t pdh’’ refers to the specified signal going high; “t pdl’’ refers to it going low.6.GBD: Guaranteed by design; not tested in production.Specifications subject to change without notice.Figure 2. Output Disable Timing DiagramDRVH or DRVLODFigure 3. Nonoverlap Timing DiagramDRVLDRVH −SWSWINAPPLICATIONS INFORMATIONTheory of OperationThe NCP3420 are single phase MOSFET drivers designed for driving two N−channel MOSFETs in a synchronous buck converter topology. The NCP3420 will operate from 5 V or 12 V, but have been optimized for high current multi−phase buck regulators that convert 12 V rail directly to the core voltage required by complex logic chips. A single PWM input signal is all that is required to properly drive the high−side and the low−side MOSFETs. Each driver is capable of driving a 3.3 nF load at frequencies up to 1 MHz.Low−Side DriverThe low−side driver is designed to drive a ground−referenced low R DS(on) N−Channel MOSFET. The voltage rail for the low−side driver is internally connected to the V CC supply and PGND.High−Side DriverThe high−side driver is designed to drive a floating low R DS(on) N−channel MOSFET. The gate voltage for the high side driver is developed by a bootstrap circuit referenced to Switch Node (SW) pin.The bootstrap circuit is comprised of an external diode, and an external bootstrap capacitor. When the NCP3420 are starting up, the SW pin is at ground, so the bootstrap capacitor will charge up to V CC through the bootstrap diode See Figure 4. When the PWM input goes high, the high−side driver will begin to turn on the high−side MOSFET using the stored charge of the bootstrap capacitor. As the high−side MOSFET turns on, the SW pin will rise. When the high−side MOSFET is fully on, the switch node will be at 12 V, and the BST pin will be at 12 V plus the charge of the bootstrap capacitor (approaching 24 V).The bootstrap capacitor is recharged when the switch node goes low during the next cycle.Safety Timer and Overlap Protection CircuitIt is very important that MOSFETs in a synchronous buck regulator do not both conduct at the same time. Excessive shoot−through or cross conduction can damage the MOSFETs, and even a small amount of cross conduction will cause a decrease in the power conversion efficiency. The NCP3420 prevent cross conduction by monitoring the status of the external mosfets and applying the appropriate amount of “dead−time” or the time between the turn off of one MOSFET and the turn on of the other MOSFET.When the PWM input pin goes high, DRVL will go low after a propagation delay (tpdlDRVL). The time it takes for the low−side MOSFET to turn off (tfDRVL) is dependent on the total charge on the low−side MOSFET gate. The NCP3420 monitor the gate voltage of both MOSFETs and the switchnode voltage to determine the conduction status of the MOSFETs. Once the low−side MOSFET is turned off an internal timer will delay (tpdhDRVH) the turn on of the high−side MOSFETLikewise, when the PWM input pin goes low, DRVH will go low after the propagation delay (tpdDRVH). The time to turn off the high−side MOSFET (tfDRVH) is dependent on the total gate charge of the high−side MOSFET. A timer will be triggered once the high−side mosfet has stopped conducting, to delay (tpdhDRVL) the turn on of the low−side MOSFETPower Supply DecouplingThe NCP3420 can source and sink relatively large currents to the gate pins of the external MOSFETs. In order to maintain a constant and stable supply voltage (V CC) a low ESR capacitor should be placed near the power and ground pins. A 1 m F to 4.7 m F multi layer ceramic capacitor (MLCC) is usually sufficient.Input PinsThe PWM input and the Output Disable pins of the NCP3420 have internal protection for Electro Static Discharge (ESD), but in normal operation they present a relatively high input impedance. If the PWM controller does not have internal pull−down resistors, they should be added externally to ensure that the driver outputs do not go high before the controller has reached its under voltage lockout threshold. The NCP5381 controller does include a passive internal pull−down resistor on the drive−on output pin. Bootstrap CircuitThe bootstrap circuit uses a charge storage capacitor (C BST) and the internal (or an external) diode. Selection of these components can be done after the high−side MOSFET has been chosen. The bootstrap capacitor must have a voltage rating that is able to withstand twice the maximum supply voltage. A minimum 50 V rating is recommended. The capacitance is determined using the following equation:C BST+Q GATED V BSTwhere Q GATE is the total gate charge of the high−side MOSFET, and D V BST is the voltage droop allowed on the high−side MOSFET drive. For example, a NTD60N03 has a total gate charge of about 30 nC. For an allowed droop of 300 mV, the required bootstrap capacitance is 100 nF. A good quality ceramic capacitor should be used.The bootstrap diode must be rated to withstand the maximum supply voltage plus any peak ringing voltages that may be present on SW. The average forward current can be estimated by:I F(AVG)+Q GATE f MAXwhere f MAX is the maximum switching frequency of the controller. The peak surge current rating should be checked in−circuit, since this is dependent on the source impedance of the 12 V supply and the ESR of C BST.Output EnablePWM inFigure 4. NCP3420 Example CircuitDFN8 3x3, 0.5PCASE 506BJ−01ISSUE O*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERMASK DEFINEDNOTES:1.DIMENSIONS AND TOLERANCING PER ASMEY14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSION b APPLIES TO PLATED TERMINALAND IS MEASURED BETWEEN 0.15 AND 0.30MM FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.8X8XDIM MIN MAXMILLIMETERSA0.80 1.00A10.000.05A30.20 REFb0.180.30D 3.00 BSCD2 1.64 1.84E 3.00 BSCE2 1.35 1.55e0.50 BSCK0.20−−−L0.300.50DETAIL AOPTIONALCONSTRUCTIONDETAIL ADETAIL BLOPTIONALCONSTRUCTIONOPTIONALCONSTRUCTIONL10.000.03DIMENSION: MILLIMETERSMOUNTING FOOTPRINTSOIC −8D SUFFIX CASE 751−07ISSUE AJ0.6ǒmm inchesǓSCALE 6:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 (0.006)PER SIDE.5.DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.6.751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.DIM A MIN MAX MIN MAX INCHES4.805.000.1890.197MILLIMETERS B 3.80 4.000.1500.157C 1.35 1.750.0530.069D 0.330.510.0130.020G 1.27 BSC 0.050 BSC H 0.100.250.0040.010J 0.190.250.0070.010K 0.40 1.270.0160.050M 0 8 0 8 N 0.250.500.0100.020S5.806.200.2280.244MYM0.25 (0.010)YM0.25 (0.010)Z SXS____ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMINCP3420DR2G NCP3420MNR2G。

APT60DQ120SG商品说明书

APT60DQ120SGDatasheet Ultrafast Soft Recovery Rectifier DiodeFinalApril 2018Contents1Revision History (1)1.1Revision A (1)2Product Overview (2)2.1Benefits (2)2.2Applications (2)3Electrical Specifications (3)3.1Absolute Maximum Ratings (3)3.2Electrical Performance (3)3.3Dynamic Characteristics (4)3.4Typical Performance Curves (4)3.5Reverse Recovery Overview (6)4Package Specification (7)4.1Package Outline Drawing (7)1Revision HistoryThe revision history describes the changes that were implemented in the document. The changes arelisted by revision, starting with the most current publication.1.1Revision ARevision A was published in April 2018. It is the first publication of this document.2Product OverviewFeaturesThe following are key features of the APT60DQ120SG device:Ultrafast recovery timesSoft recovery characteristicsLow forward voltageLow leakage currentAvalanche energy ratedRoHS compliant2.1BenefitsThe following are benefits of the APT60DQ120SG device:Higher switching frequencyLow switching lossesLow noise (EMI) switchingHigher reliability systemsIncreased system power density2.2ApplicationsThe APT60DQ120SG device is designed for the following applications: Power Factor Correction (PFC)Anti-parallel diodeSwitch-mode power supplyInverters/convertersMotor controllersFreewheeling diodeSwitch-mode power supplyInverters/convertersSnubber/clamp diode3Electrical SpecificationsThis section shows the electrical specifications for the APT60DQ120SG device.3.1Absolute Maximum RatingsThe following table shows the absolute maximum ratings for the APT60DQ120SG device.All ratings: T = 25 °C unless otherwise specified.CTable 1 • Absolute Maximum RatingsSymbol Parameter Ratings UnitV R Maximum DC reverse voltage1200VV RRM Maximum peak repetitive reverse voltage1200V RWM Maximum working peak reverse voltage1200I F(AV)Maximum average forward current (T = 103 °C, duty cycle = 0.5)C60AI F(RMS)RMS forward current87I FSM Non-repetitive forward surge current (T = 45 °C, 8.3 ms)J540E AVL Avalanche energy (1 A, 40 mH)20mJT , TJ STG Operating and storage temperature range–55 to 175°CT L Lead temperature for 10 seconds300The following table shows the thermal and mechanical characteristics of the APT60DQ120SG device.Table 2 • Thermal and Mechanical CharacteristicsSymbol Characteristic Min Typ Max UnitRθJC Junction-to-case thermal resistance0.40°C/WW T Package weight0.14oz4.0g 3.2Electrical PerformanceThe following table shows the static characteristics of the APT60DQ120SG device.Table 3 • Static CharacteristicsSymbol Characteristic Test Conditions Min Typ Max UnitV F Forward Voltage I = 60 AF 2.8 3.3VI = 120 AF 3.35I = 60 A, T = 125 °CF J 2.11I RM Maximum reverse leakage current V = 1200 VR100μAV = 1200 V, T = 125 °CR J500C J Junction capacitance V = 200 VR37pF3.3Dynamic CharacteristicsThe following table shows the dynamic characteristics of the APT60DQ120SG device.Table 4 • Dynamic CharacteristicsSymbol Characteristic Test ConditionsMin Typ Max Unit t rrReverse recovery timeI = 1 A, di /dt = –100 A/µs F F V = 30 V R T = 25 °CJ30nst rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 25 °CC 320 Q rr Reverse recovery change 630 nC I RRM Maximum reverse recovery current 5 A t rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 125 °CC 420 ns Q rr Reverse recovery charge 2810 nC I RRM Maximum reverse recovery current 12 A t rr Reverse recovery time I = 60 A, di /dt = –1000 A/µs F F V = 800 V R T = 125 °CC 190 ns Q rr Reverse recovery change 4415 nC I RRMMaximum reverse recovery current38A3.4Typical Performance CurvesThis section shows the typical performance curves for the APT60DQ120SG device.Figure 1 • Maximum Transient Thermal ImpedanceFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 4 • Qrr vs. Current Rate of Change Figure 5 • IRRM vs. Current Rate of ChangeFigure 6 • Dynamic Parameters vs. Junction TemperatureFigure 7 • Maximum Average Forward Current vs. Case TemperatureFigure 8 • Junction Capacitance vs. Reverse Voltage1. 2. 3. 4. 5.Figure 8 • Junction Capacitance vs. Reverse Voltage3.5Reverse Recovery OverviewThe following illustration shows the reverse recovery testing and measurement information for the APT60DQ120SG device.Figure 9 • Diode Reverse Recovery Waveform and DefinitionsI —Forward conduction current.F di /dt—Rate of diode current change through zero crossing.F I —Maximum reverse recovery current.RRM t —Reverse recovery time, measured from zero crossing where diode current goes from positive to rr negative, to the point at which the straight line through I and 0.25 × I passes through zero.RRM RRM Q —Area under the curve defined by I and t .rr RRM rr4Package SpecificationThis section outlines the package specification for the APT60DQ120SG device.4.1Package Outline DrawingThis section details the D PAK package drawing of the APT60DQ120SG device. Dimensions are in3millimeters and (inches).Figure 10 • Package Outline DrawingMicrosemi Corporate HeadquartersOne Enterprise, Aliso Viejo,CA 92656 USAWithin the USA: +1 (800) 713-4113Outside the USA: +1 (949) 380-6100Fax: +1 (949) 215-4996Email:***************************© 2018 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners.Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at .053-4250。

莫耐PS扩散板(侧光式)产品规格书

日期：莫耐光电产品规格承认书版次：01产品名称MN-E30系列 PS扩散板Grade 光学级内容本规格书规范以下事项：1. 产品介绍2. 产品规格3.包装4.产品标示5.产品储存注意事项6.其他7、SGS报告文件保存本规格书共一式两份，买卖双方各执一份文件修订于买卖双方同意后，始可变更此份文件内容买方确认______________________________公司采购部研发部品保部承认承认承认承认卖方确认_____________________________公司业务部生产部技术部品保部承认承认承认承认目录1.产品介绍2.产品规格3.包装4.产品标识5.存储产品注意事项6.其他7、SGS报告1.产品和范围1-1.产品：PS diffuser Plate “LDS-E30系列”（PS扩散板）1-2.范围：本规范仅限于东莞莫耐光电有限公司提供的PS扩散板，该产品主要应用于TV、模组、照明用扩散板。

2.产品规格2-1.产品外观和性能检验规范项目技术要求检验方法常规检查长（mm）（大板）+3mm-0mm卷尺宽（mm）（大板）+3mm-0mm卷尺厚度+-3% 千分卡尺对角线≤3mm 卷尺翘曲度（mm）边缘：≤1.2（mm）0级平台/塞规颜色与基准板一致目测/色温计透光率80%+-5% 透光率/雾度仪雾度≥92.5% 透光率/雾度仪外观检查点状缺陷：黑点、白点、异物、凹陷0.50 mm2不可0.30 mm2~0.50 mm2, 1个/500*500mm0.15 mm2～0.30 mm23个/500*500mm0.05 mm2~0.15 mm25个/500*500mm0.05 mm2以下不管控1、目测2、放大镜划伤、黑线、不明显（无感）线状15mm 以上不可10～15mm 1个/500*500mm5～10mm 1个/500*500mm1～5mm 2个/500*500mm1 mm以下不管控无法判定时以组BLU不可见为准波纹、压痕、气泡以组BLU不可见为准料翻、折皱、浮起不可见无辊纹不可有2-2.特性检查物性值试验方法单位LDS-E30树脂材质ISO 1043 －PS光线透过率ISO 13468 ％80%+-5%光扩散率DIN 5036 ％88表面硬度（铅笔硬度）JIS K5400 －H 吸水率(24小时) ISO 62 ％0.07 饱和吸水率ISO 62 ％0.07 吸水尺寸变化率ISO 62 ％0.02 吸水翘曲 (注1) mm 0.2以下拉伸强度ISO 527 MPa 40拉伸伸长率ISO 527 ％ 2弯曲强度ISO 178 MPa 90弯曲弹性率ISO 178 MPa 3200 艾氏冲击强度ISO 180/1U kJ/cm2 4夏比冲击强度ISO 179/1fU kJ/cm215维卡软化温度ISO 306 ℃102荷重挠度温度ISO 75 ℃90 膨胀率JIS K7197 cm/cm･℃8×10－５*以上的数据为通过实验而得出的測定值，而非规格值和保证值；*注1：通过把饱和吸水状态的扩散板组装在模组上，24小时后测定画面中央翘曲部份。

PSMN004-25P中文资料

Philips Semiconductors
Product specification
N-channel logic level TrenchMOS™ transistor PSMN004-25B, PSMN004-25P
Normalised Power Derating, PD (%) 100
90
Qrr
Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 75 A
-
- 240 A
- 0.85 1.2 V - 1.1 -
- 400 - ns
-
1
- µC
October 1999
3
Rev 1.100
元器件交易网
Gate-source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA; Tj = -55˚C
- 7.5 - nH
- 6000 - pF - 1700 - pF - 1400 - pF
October 1999
2
Rev 1.100
元器件交易网
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS™ transistor PSMN004-25B, PSMN004-25P
VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C

PSMN4R0-30YL中文资料

PSMN4R0-30YLN-channel TrenchMOS logic level FETRev. 01 — 10 September 2008Preliminary data sheet 1.Product profile1.1General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product is designed and qualified for use inindustrial and communications applications.1.2Features and benefitsHigh efficiency due to low switching and conduction losses Suitable for logic level gate drive sources1.3ApplicationsClass-D amplifiers DC-to-DC converters Motor controlServer power supplies1.4Quick reference dataTable 1.Quick referenceSymbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j≥25°C; T j≤150°C--30VI D drain current T mb=25°C; V GS=10V;see Figure 1--99AP tot total powerdissipationT mb=25°C; see Figure 2--69W Dynamic characteristicsQ GD gate-drain charge V GS=4.5V; I D=10A;V DS=12V; see Figure 14;see Figure 15- 4.3-nC Static characteristicsR DSon drain-sourceon-state resistance V GS=10V; I D=15A;T j=25°C; see Figure 12- 2.694mΩ2.Pinning information3.Ordering information4.Limiting valuesTable 2.Pinning information Pin SymbolDescription Simplified outline Graphic symbol1S source SOT669 (LFPAK)2S source 3S source 4G gatembDmounting base; connected to drainmb 1234Table 3.Ordering information Type number PackageNameDescription VersionPSMN4R0-30YL LFPAKPlastic single-ended surface-mounted package (LFPAK); 4 leadsSOT669Table 4.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V DS drain-source voltage T j ≥25°C; T j ≤150°C-30V V DGR drain-gate voltage T j ≥25°C; T j ≤150°C; R GS =20k Ω-30V V GS gate-source voltage -2020V I D drain current V GS =10V;T mb =100°C; see Figure 1-70A V GS =10V;T mb =25°C;see Figure 1-99A I DM peak drain current t p ≤10µs; pulsed; T mb =25°C;see Figure 3-396A P tot total power dissipation T mb =25°C;see Figure 2-69W T stg storage temperature -55150°C T j junction temperature -55150°C Source-drain diodeI S source current T mb =25°C-99A I SM peak source current t p ≤10µs; pulsed; T mb =25°C -396A Avalanche ruggednessE DS(AL)Snon-repetitive drain-source avalanche energyV GS =10V;T j(init)=25°C; I D =99A; V sup ≤30V; R GS =50Ω; unclamped-41mJ5.Thermal characteristicsTable 5.Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting basesee Figure 4--1.82K/W6.CharacteristicsTable 6.CharacteristicsSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-sourcebreakdown voltage I D=250µA; V GS=0V; T j=25°C30--V I D=250µA; V GS=0V; T j=-55°C27--VV GS(th)gate-source thresholdvoltage I D=1mA; V DS = V GS; T j=25°C;seeFigure 10; see Figure 111.3 1.72.15VI D=1mA; V DS = V GS; T j=150°C; seeFigure 100.65--VI D=1mA; V DS = V GS; T j=-55°C; seeFigure 10-- 2.45VI DSS drain leakage current V DS=30V; V GS=0V; T j=25°C--1µAV DS=30V; V GS=0V; T j=150°C--100µA I GSS gate leakage current V GS=16V;V DS=0V; T j=25°C--100nAV GS=-16V;V DS=0V; T j=25°C--100nAR DSon drain-source on-stateresistance V GS=4.5V; I D=15A;T j=25°C; seeFigure 12- 3.7 6.5mΩV GS=10V;I D=15A;T j=150°C; seeFigure 13--7mΩV GS=10V;I D=15A;T j=25°C;seeFigure 12- 2.694mΩR G gate resistance f=1MHz-0.52-ΩDynamic characteristicsQ G(tot)total gate charge I D=10A;V DS=12V; V GS=10V; seeFigure 14; see Figure 15-36.6-nCI D=10A;V DS=12V; V GS=4.5V; seeFigure 14; see Figure 15-17.6-nCI D=0A; V DS=0V;V GS=10V-33-nCQ GS gate-source charge I D=10A;V DS=12V; V GS=4.5V; seeFigure 14; see Figure 15- 5.6-nCQ GD gate-drain charge- 4.3-nC Q GS(th)pre-thresholdgate-source charge- 3.6-nCQ GS(th-pl)post-thresholdgate-source charge-2-nCV GS(pl)gate-source plateauvoltageV DS=12V; see Figure 14; see Figure 15- 2.3-VC iss input capacitance V DS=12V; V GS=0V; f=1MHz;T j=25°C;see Figure 16-2090-pFC oss output capacitance-469-pF C rss reverse transfercapacitance-227-pFt d(on)turn-on delay time V DS=12V; R L=0.5Ω; V GS=4.5V;R G(ext)=4.7Ω-28-nst r rise time-51-ns t d(off)turn-off delay time-44-ns t f fall time-18-nsSource-drain diodeV SD source-drain voltage I S =25A;V GS =0V; T j =25°C; see Figure 17-0.88 1.2V t rr reverse recovery time I S =20A;dI S /dt =-100A/s; V GS =0V; V DS =20V-39-ns Q rrecovered charge-36-nCTable 6.Characteristics …continuedSymbol ParameterConditionsMin Typ Max Unit7.Package outlinePlastic single-ended surface-mounted package (LFPAK); 4 leads SOT669Fig 18.Package outline SOT669 (LFPAK)8.Revision historyTable 7.Revision historyDocument ID Release date Data sheet status Change notice Supersedes PSMN4R0-30YL_120080910Preliminary data sheet--9.Legal information9.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL .9.2DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.9.3DisclaimersGeneral — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure ormalfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.9.4TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.TrenchMOS — is a trademark of NXP B.V.10.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.11.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .23Ordering information. . . . . . . . . . . . . . . . . . . . . .24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .25Thermal characteristics . . . . . . . . . . . . . . . . . . .46Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .57Package outline. . . . . . . . . . . . . . . . . . . . . . . . .108Revision history. . . . . . . . . . . . . . . . . . . . . . . . .119Legal information. . . . . . . . . . . . . . . . . . . . . . . .129.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .129.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .129.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1210Contact information. . . . . . . . . . . . . . . . . . . . . .12Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2008.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@。

IRG4PH30KD;中文规格书,Datasheet资料

IRG4PH30KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEV CES = 1200VV CE(on) typ.= 3.10V@V GE = 15V, I C = 10APD- 91579AShort Circuit RatedUltraFast IGBTParameterMax.UnitsV CESCollector-to-Emitter Voltage 1200VI C @ T C = 25°C Continuous Collector Current 20I C @ T C = 100°C Continuous Collector Current 10I CM Pulsed Collector Current Q40AI LMClamped Inductive Load Current R 40I F @ T C = 100°C Diode Continuous Forward Current 10I FM Diode Maximum Forward Current 40t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 1.2R θJC Junction-to-Case - Diode–––––– 2.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.24–––R θJA Junction-to-Ambient, typical socket mount ––––––40WtWeight–––6 (0.21)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsWFeatures• High short circuit rating optimized for motor control, t sc =10µs, V CC = 720V , T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• Tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes• Latest generation 4 IGBT's offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces IRGPH30MD2 products • For hints see design tip 97003Benefits2/7/2000 1IRG4PH30KDParameterMin.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—5380I C = 10A Q ge Gate - Emitter Charge (turn-on)—9.014nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2132V GE = 15V t d(on)Turn-On Delay Time —39—t r Rise Time —84—T J = 25°Ct d(off)Turn-Off Delay Time —220340I C = 10A, V CC = 800V t f Fall Time —90140V GE = 15V, R G = 23ΩE on Turn-On Switching Loss —0.95—Energy losses include "tail"E off Turn-Off Switching Loss — 1.15—mJ and diode reverse recovery E ts Total Switching Loss — 2.10 2.6See Fig. 9,10,18t sc Short Circuit Withstand Time 10——µs V CC = 720V, T J = 125°CV GE = 15V, R G = 5.0Ωt d(on)Turn-On Delay Time —42—T J = 150°C, See Fig. 10,11,18t rRise Time—79—I C = 10A, V CC = 800Vt d(off)Turn-Off Delay Time —540—V GE = 15V, R G = 23Ω,t f Fall Time—97—Energy losses include "tail"E ts Total Switching Loss— 3.5—mJ and diode reverse recovery L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —800—V GE = 0V C oes Output Capacitance—60—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —5076ns T J = 25°C See Fig.—72110T J = 125°C 14 I F = 10A I rr Diode Peak Reverse Recovery Current — 4.47.0A T J = 25°C See Fig.— 5.98.8T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —130200nC T J = 25°C See Fig.—250380T J = 125°C 16 di/dt = 200A/µs di (rec)M /dtDiode Peak Rate of Fall of Recovery —210—A/µs T J = 25°C See Fig.During t b—180—T J = 125°C 17Switching Characteristics @ T J = 25°C (unless otherwise specified)nsnsParameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 1200——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.19—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 3.104.2I C = 10A V GE = 15V — 3.90—V I C = 20A See Fig. 2, 5— 3.01—I C = 10A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0—6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage—-12—mV/°C V CE = V GE , I C = 250µA g fe Forward Transconductance T 4.3 6.5—S V CE = 100V, I C = 10A I CES Zero Gate Voltage Collector Current ——250µA V GE = 0V, V CE = 1200V ——3500V GE = 0V, V CE = 1200V, T J = 150°C V FM Diode Forward Voltage Drop — 3.43.8V I C = 10A See Fig. 13— 3.33.7I C = 10A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)IRG4PH30KD 3(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PH30KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4PH30KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageResistance Junction TemperatureIRG4PH30KDFig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward CurrentCollector Current1101000.02.04.06.08.0FMForward Voltage D rop - V (V)I n s t a n t a n e o u s F o r w a r d C u r r e n t ( A )IRG4PH30KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt101001000100001001000fdi /dt - (A/µs)1101001001000fdi /dt - (A/µs)020040060080010001001000fdi /dt - (A/µs)204060801001001000fdi /dt - (A/µs)t r r - ( n s )I I R R M - ( A )d i (re c )M /d t - ( A /µs )Q I R R - ( n C )IRG4PH30KDt2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fE NTFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PH30KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=960V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4PH30KDD im en sion s in M illim eters a nd (Inches)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)- D - 5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140) 2.50 (.089)1.50 (.059)43X0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50 (.217)0.25 (.010)1.40 (.056)1.00 (.039)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)*N O T E S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N T R O L L IN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ).4 C O N F O R M S T O JE D E C O U T L IN E T O -247A C.L E A D A S S IG N M E N T S 1 - G A T E2 - C O L L E C T O R3 - E M IT T E R4 - C O L L E C T O R*LO N G E R LE A D E D (20m m )V E R S IO N A V A IL A B L E (T O -247A D )TO O R D E R A D D "-E " S U FFIX T O P A R T N U M B E RCase Outline — TO-247ACNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 6/00分销商库存信息: IRIRG4PH30KD。

RY全系列规格书

第3页共7页
面通知
RY 金属氧化膜固定电阻器产品规格书
4-2 构造 Structure No 构造 Structure 材料 Material 1 基体 Ceramic core 氧化铝陶瓷 Alumina ceramic 2 导电膜层 0.2Ω～3Ω 金属合金膜层 Metal alloy film Resistor 3Ω以上 over 金属氧化膜层 Metal alloy film 3 引出端镀锡铁帽 Cap 铁 Iron,镀铜、锡 Plated(Cu/Sn) 4 镀锡铜线 Terminal Wire 镀锡铜线 Annealed copper wire(Solder Plated) Terminal 5 引出线与镀锡铁帽点焊点焊 Connection of cap and lead Electrically weld 6 涂装涂装绝缘电阻漆 Insulating Silicon resin Coating 涂色：浅灰 Coating color: Blue gray 安全认证涂料 Safety Approved Material 7 标志 Marking 电阻器色环漆 Silicon resin 5、标志 Marking 电阻器阻值用色环法标志。The resistors shall be marked with color codes.
客户部品号 Customer Type：
拟制 CHECKED BY：朱玲玲 2011.6.16 审核 REVIEWED BY：袁海兵 2011.6.16 批准 APPROVED：周荣林 2011.6.16
南京先正电子有限公司 Nanjing Shagon Electronics Co.,Ltd 厂址：南京后宰门西村九十五号 84822654 Adress: 95 HouZaimen xicun Nanjing China 电话（Tel）:025-84824998 电传（Fax）:025-84824707 邮政编码（P.C.）:210016 第1页共7页

IPC挠性印制电路用的挠性覆金属箔绝缘材料.

IPC-4204挠性印制电路用的挠性覆金属箔绝缘材料IPC-42042002.05内容目录1 范围...........................................1 3.4.2 胶粘剂.. (5)1.1 分类系统..................................1 3.4.3 覆金属 (5)1.1.1 非专用符号..............................1 3.4.4 片材 (5)1.1.2 专用符号..................................1 3.4.5 卷材.. (5)1.1.2.1 基膜类型................................1 3.5 外观要求.. (5)1.1.2.2 增强方式.................................1 3.5.1 标志 (5)1.1.2.3 增强类型..................................1 3.5.2 皱纹、折痕、条纹和划痕 (5)1.1.2.4 基膜厚度...................................1 3.5.3 杂夹物.. (6)1.1.2.5 胶粘剂类型................................1 3.5.4 空洞.. (6)1.1.2.6 胶粘剂厚度.................................2 3.5.5 孔洞、撕裂和分层.. (6)1.1.2.7 覆金属........................................2 3.6 尺寸要求 (6)1.1.2.7.1 规格单号...................................2 3.6.1 片材宽度和长度. (6)1.1.2.7.2 金属箔......................................2 3.6.2 卷材宽度. (6)1.1.2.7.3 金属箔类型................................2 3.6.3 卷材长度. (6)1.1.2.7.4 金属箔等级...............................2 3.6.4 绝缘厚度 (6)1.1.2.7.5 标称覆金属厚度..........................3 3.6.5 胶粘剂厚度 (6)1.1.2.7.6 粘结增强处理.............................3 3.6.6 金属箔厚度 (6)1.2 鉴定................................................3 3.7 物理性能要求 (7)1.3 质量一致性......................................3 3.7.1 尺寸稳定性.. (7)1.4 材料特性.........................................3 3.7.2 剥离强度.. (7)1.5 新材料............................................3 3.7.2.1 接收态剥离强度 (7)2 引用文件...........................................3 3.7.2.2 浮焊后剥离强度.. (7)2.1 IPC................................................4 3.7.2.3 温度循环后剥离强度.. (7)2.2 美国材料测试与材料协会（ASTM）.....4 3.7.3 起始撕裂强度. (7)2.3 UL标准..........................................4 3.7.4 扩展撕裂强度. (7)2.4 NCSL国际标准................................4 3.7.5 弯曲疲劳. (7)2.5 ISO................................................4 3.7.6 低温可挠性. (7)3 要求................................................4 3.8 化学性能要求. (7)3.1 术语和定义.....................................4 3.8.1 耐化学性. (7)3.1.1 鉴定检验......................................4 3.8.2 耐浮焊性. (7)3.1.2 质量一致性检验.............................4 3.8.3 可焊性. (7)3.1.3 用户检验批..................................4 3.9 电性能要求.. (7)3.1.4 卖方检验批...................................4 3.9.1 介电常数. (7)3.1.5 结构相似的组成.............................4 3.9.2 介质损耗角正切. (7)3.1.6 空洞............................................5 3.9.3 体积电阻率（湿热）. (7)3.1.7 杂夹物........................................5 3.9.4 表面电阻（湿热） (7)3.2 规格单...........................................5 3.9.5 介电强度 (7)3.3抵触..............................................5 3.10 环境性能要求 (7)3.4 材料..............................................5 3.10.1 耐霉性. (7)3.4.1 基膜...........................................5 3.10.2 吸水率 (8)3.10.3 阻燃性...................................8 4.9.4 参数能力评定 (11)3.10.4 使用温度................................8 4.9.5 参数分析 (11)3.10.5 耐湿性和绝缘电阻...................8 4.9.6质量一致性放宽检验.. (11)3.11 制造质量..................................8 4.9.6.1 放宽检验的条件. (11)4 质量保证条款................................8 4.9.6.2 放宽检验样本大小. (16)4.1 检验职责...................................8 4.9.6.3 检查控制计划的条件 (16)4.2 检验设备和检测设施...................8 5 交货准备 (16)4.3 标准实验室条件.........................8 5.1 包装. (16)4.4 容许偏差..................................8 6 说明 (16)4.5 检验分类..................................8 6.1 订单资料. (16)4.6 材料检验..................................8 6.2 特殊化学品暴露. (16)4.7 鉴定检验..................................8 6.3 参考 (16)4.7.1 特性检验………………………….8 图4.7.2 频度.....................................8 图4-1控制计划. (12)4.8 质量一致性检验........................8 图4-2 流程和控制/检验点图 (13)4.8.1 产品交货检验.........................9 图4-3 过程参数相关图. (14)4.8.2 样本单位...............................9 图4-4 质量一致性放宽检验图. (15)4.8.3 A组检验…………………………..9 表4.8.3.1 抽样方案.............................9 表1-1 基膜类型符号 (1)4.8.3.2 失效..................................10 表1-2 增强方式符号. (1)4.8.3.3 用户抽样方案......................10 表1-3 增强类型符号.. (2)4.8.3.4 拒收批...............................10 表1-4 基膜和胶粘剂厚度符号.. (2)4.8.4 B组检验...............................10 表1-5 胶粘剂类型符号.. (2)4.8.4.1 抽样方案............................10 表1-6 金属箔等级符号. (2)4.8.4.2失效..................................10 表1-7 铜箔厚度符号 (3)4.8.4.3 材料的不合格.....................10 表3-1 基膜标称厚度的允许偏差 (6)4.8.5 C组检验..............................10 表3-2 胶粘剂标称厚度的允许偏差. (6)4.8.5.1 抽样方案............................10 表4-1 试验方法频度. (9)4.8.5.2失效..................................10 表4-2 片材A组和B组检验抽样方案. (9)4.8.5.3 材料的不合格.....................10 表4-3 卷材A组和B组检验抽样方案. (9)4.9 统计过程控制（SPC） (10)4.9.1 参数标识 (11)4.9.2 参数诊断 (11)4.9.3 参数控制 (11)2002.05 IPC-4204挠性印制电路用的挠性覆金属箔绝缘材料1 范围本标准规定了用作挠性印制电路和挠性扁平电缆的挠性覆金属箔绝缘材料的分类系统、鉴定检验和质量一致性检验的要求。

PS-WPM40 (USA)- 14-Sep-15

UNION INDUSTRIES (HONG KONG) LIMITED滙基實業有限公司UNIT 1710, GRANDTECH CENTRE, 8 ON PING STREET, SIU LEK YUEN, SHATIN, N.T. HONG KONG 香港新界沙田小瀝源安平街8號偉達中心1710室TEL: (852) 2635 1299 FAX: (852) 2635 9532Kitty/ Grace 14-Sep-15通用版POP 贴纸，更改为POP 挂卡WAR043WU20CL UL Plug WPM40BlackDescription (產品名稱)4oz Popcorn MakerExposed length with plug : 1.5M Rating (功率)AC120V 60HZ 600WIndividual Box (彩盒/ 白盒 )白盒+海报Color (產品顏色)主機噴紅色 (Pantone# 201C)Master Carton (外箱)K3AApproval (認證要求)ETL & c ETLQty /Master Carton (每箱數量)1pc /master1- Product Colors and Materials (產品顏色和材料)Qty TOP COVERSTEEL PLATE 1红色（PMS201C)SCREW,FOR TOP COVER 10TOP ENCLOSURESTEEL PLATE 1红色（PMS201C)SCREW,FOR TOP ENCLOSURE 4MERCHANT CORP LED,R/C WOYR2/8, STAND4SCREW,FOR STAND 16DOOR HINGE4SCREW,FOR DOOR HINGE 8TEMPERED GLASS TEMPERED GLASS 3GLASS CLIP 12DOOR1DOOR HANDLE PANELSTAINLESS STEEL,BRUSHED 1SCREW,FOR DOOR HANDLE PANEL 2LIGHTBULB 1LIGHT HOLDER RS-1095 250V 650W T170℃1BLOCKSUS 430,BRUSHED 1KETTLE HANGER,LEFT SUS 430,BRUSHED 1KETTLE HANGER,RIGHT SUS 430,BRUSHED 1FLAT SPRING STAINLESS STEEL 1LIDSTAINLESS STEEL 1LID HANDLE 1JOIN AXLE STAINLESS STEEL 1AXLE FIXER STAINLESS STEEL 1AXLE STAINLESS STEEL 1SPRINGSTAINLESS STEEL 1KETTLE SOCKET SS-66-Q-3K 125V 15A 1DETACHABLE PLATE STEEL,AL-PLATED 1BOTTOM PLATE STEEL,AL-PLATED 1DRAWER STAINLESS STEEL 1BUSHING 1FEET4LOCKING MECHANISM 4SVT, 300V 3C 18AWG,105℃, 125V 15A, WITHGROUNDING PLUG, 1.5 M EXPOSTED MINIMUMMAGNETIC LOCKMAGNETIC1MAGNETIC LOCK HOLDER STEEL, Zn-PLATED 1MAGNETIC LOCK PANEL2Issued by (制作人) :Issued Date (制作日期) :Edition (版本) :Revision date (最新修訂日期) :Status (批復狀態) :PRODUCT SPECIFICATION產品生產規格書Factory No. (工廠型號)Plug Type (插頭類型)Customer No. (客戶型號)Color (顏色)Cord Length (電源線長度)Parts Name MaterialColorSTEELNATUALSTEELNATUAL BLACK TYPE SR-06NR,125VAC 13AAL NATUAL STEEL NATUAL AL NATUAL 黑色STEELNATUAL 透明PVC灰色AREYLIC透明NATUAL STEEL NATUAL 120V/60W白色黑色NATUAL NATUAL NATUAL NATUAL NATUAL PP黑色NATUAL NATUAL NATUAL 黑色黑色NATUAL NATUAL NATUAL RUBBER 黑色ABS 黑色STEELNATUAL 黑色NATUAL 1黑色AL NATUALModel No. (產品型號)SWITCHPOWER CORDPower Cord andPlug(電源線/插頭)Packaging ( 包裝)2KETTLE ASSY.INNER KETTLE STAINLESS STEEL 1OUTER KETTLE STAINLESS STEEL1WIRE JOINT CASE1WIRE JOINT SASE COVER 1SWING STICKSTEEL, Ni-PLATED 1HANDLE,FOR SWING STICK 1ECCENTRIC WHEEL ALUMINIUM ALLOY 1SPRING STAINLESS STEEL 1BRACKET A 1BRACKET B1POWER CORD,KETTLE HPN 18AWG 3C 105℃ VW-1 300V TA HSING 1WITH L5-15P PLUG, 37cm EXPOSTED MINIMUM CAP NUT,FOR KETTLE STEEL,Ni-PLATED 2SCOOP1KERNEL CUP 1OIL CUP1ON/OFF switches: LIGHT; POP 機身: Conair紅色不需要保溫板所有擋板必須有”WARING”壓字logo用加深內外鍋(電熱管為: 470 WATT, AC120V 60Hz)電源線為UL 標準(電源線外露不少於1.5米)鋁柱為电化本色底板扣在主機內, 支板 (機外)及垃圾盆均為不锈钢板門軸為统一長度齒輪箱為新塑料齒輪箱連斜齒Fuse 支架需要改用陶瓷墊片及改良後之設計锅摇杆手柄颜色是黑色Accessories (配件)玉米鏟 1个白色玉米量勺1个白色油勺1个白色2- Product Graphics (產品絲印/刻字等)2.1 Silkscreen on the top cover A- 顏色 (Color) :絲印顔色爲銀色, “Professional” 下面的线也为银色 B- 位置 (Locaton)：Print on Front panel (印于前面板上)擋板有”WARING”壓字logoNATUAL NATUAL PA66黑色PA66黑色NATUAL PP黑色NATUAL NATUAL STEEL NATUAL STEEL NATUAL NATUAL PP 白色PP 白色黑色PP 白色2.2 DOOR LABEL (門板絲印)A- 顏色 (Color) ：Color in Black (絲印顔色爲黑色)B- 位置 (Locaton) ：Silkscreen on the plastic door left bottom corner(絲印于門板左下角)距离门板左边 3.0mm, 距离门板底边2.0mm2.３ ROOF TOP WARNING (機頂警語)A- 顏色 (Color) ：Color in Silver (絲印顔色爲銀色)B- 位置 (Locaton) ：Silkscreen on the middle roof top （机顶）2.４ Caution artwork on the Kettle (鍋膽警語贴纸)A- 顏色 (Color) ：紅色B- 位置 (Locaton) ：Stick on the outer kettle surface (贴于鍋膽外表面, 正对门板的一面) C- 尺寸： 4.25" x 2"2.5 POP Label (POP门板挂卡)A- 材料 (Material) ：190 gram ART PAPER,FINISH:表面过PP Coating,TAG HANGING ON DOOR.POP挂卡，挂于门上 B- 顏色 (Color) ：4色·CMYKC- 尺寸 (Size) ：200mm(W) x 125mm(H)D-文件编号：PG-22465CE- 位置 (Locaton)：前门板右上角3- Rating Mark (銘牌/ 功率標貼)A- 顏色 (Color) ：银底黑字B- 材料 (Material) ：银龙（符合UL标准）C- 尺寸 (Size) ：125(L) x 35(H) mmD- 位置 (Locaton) ：机底E- 内容 (Content) ：見附圖F- 備註 (Remarks)功率标上空白的位置要盖或者印日期码格式为 “年年月月日日"4- Packaging (包裝)4-1- White Box+ Color Poster (白盒+彩色海报)A- 材料 /厚度(Material/Thickness) 海报为80gsm镜面贴纸，四色印刷，表面过UV白盒： 270gsm白卡+E-FluteB- 顏色 (Color) 4 色海报C- 白盒尺寸 (White box Size) 485 (L) x 400 (W) x590 (H) mm (订购前请与工程部核实正确的尺寸)海报尺寸(Poster Size)460mm (W) x 570mm (H)D- 位置 (Locaton) 白盒两面E- 備註 (Remarks) 文件编号: WPM40-320A4-2- UPC BARCODE LABEL （白盒ＵＰＣ貼紙）A- 材料 /厚度(Material/Thickness) ：80g 镜面不干胶贴纸B- 顏色 (Color) ：白底黑字C- 尺寸 (Size) ：160（W) x 100 (H) mmD- 位置 (Locaton) ：白盒其中一个空白面的右下方，见图片，距离该空白面右边和下边各5cm的位置D- 備註 (Remarks) ：UPC CODE : 0-40072-01086-6空白位置要印日期码年年月月日日，例如 1110104-3- Notice Insert （鍋膽指示卡）A- 材料 /厚度(Material/Thickness) ：100克黄色书纸B- 顏色 (Color) ：黄纸黑字（底色黄色Pantone 色号: PMS1205U) C- 尺寸 (Size) ： 5.5*8.8"D- 備註 (Remarks) ：文件编号: PG-231454-4- Instruction Manual (說明書)A- 材料 /厚度(Material/Thickness) ：100gsm woodfree artpaper （100g書紙）B- 顏色 (Color) ：白底黑字C- 尺寸 (Size) ：138mm (W) x 210mm (H)D-訂裝：騎馬釘D- 備註 (Remarks) ：文件编号: IB-8367C(09WR13126)4-5- Plastic Bag (塑料袋)Before being put in color box.Units must be packed with“04 LD-PE”or "04 HD-PE" and warning letter poly bag with holesMust have one hole in 6inch x 6inch area- 產品放入包裝盒之前, 一定要先入膠袋- 膠袋上要印刷警示語和環保標誌, 見圖示- 膠袋每6x6 英寸的範圍內要打一個孔此产品所有胶袋都使用低密度文字的内容请参考右图请根据胶袋的尺寸，选用合适的警示语尺寸，具体参考Conair的胶袋使用规则文件(2011年7月底文件已经转采购部）。

NX3L4053HR,115, 规格书,Datasheet 资料

NX3L4053PW 40 C to +125 C
5. Marking
Table 2. Marking codes Marking code M43 X3L4053 Type number NX3L4053HR NX3L4053PW
NX3L4053
All information provided in this document is subject to legal disclaimers.
2. Features and benefits
Wide supply voltage range from 1.4 V to 4.3 V Very low ON resistance (peak): 1.8 (typical) at VCC = 1.4 V 1.0 (typical) at VCC = 1.65 V 0.6 (typical) at VCC = 2.3 V 0.6 (typical) at VCC = 2.7 V 0.5 (typical) at VCC = 4.3 V Break-before-make switching High noise immunity ESD protection: HBM JESD22-A114F Class 3A exceeds 4000 V MM JESD22-A115-A exceeds 200 V CDM AEC-Q100-011 revision B exceeds 1000 V IEC61000-4-2 contact discharge exceeds 6000 V for switch ports CMOS low-power consumption Latch-up performance exceeds 100 mA per JESD 78 Class II Level A 1.8 V control logic at VCC = 3.6 V Control input accepts voltages above supply voltage Very low supply current, even when input is below VCC High current handling capability (350 mA continuous current under 3.3 V supply) Specified from 40 C to +85 C and from 40 C to +125 C