EMH2308-TL-E;中文规格书,Datasheet资料

No. A1445-1/7Features
• The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive
• Halogen free compliance • Protection diode in
Speci fi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter
Symbol Conditions Ratings
Unit Drain-to-Source Voltage V DSS
--20V Gate-to-Source Voltage V GSS ±10V Drain Current (DC)I D --3
A Drain Current (Pulse)I DP PW ≤10μs, duty cycle ≤1%
--20A Allowable Power Dissipation P D When mounted on ceramic substrate (900mm 2
×0.8mm) 1unit 1.0W Total Dissipation P T When mounted on ceramic substrate (900mm 2×0.8mm)
1.2W Channel Temperature Tch 150
°C Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)7045-002
71112 TKIM/41509PE MSIM TC-00001891
EMH2308
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Product & Package Information
• Package : EMH8• JEITA, JEDEC : -• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
TL
MH
Lot No.
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
Unit min typ
max
Drain-to-Source Breakdown Voltage V(BR)DSS I D=--1mA, V GS=0V--20V Zero-Gate Voltage Drain Current I DSS V DS=--20V, V GS=0V--1μA Gate-to-Source Leakage Current I GSS V GS=±8V, V DS=0V±10μA Cutoff Voltage V GS(off)V DS=--10V, I D=--1mA--0.4--1.3V Forward Transfer Admittance| yfs |V DS=--10V, I D=--1.5A 2.1 3.6S
Static Drain-to-Source On-State Resistance
R DS(on)1I D=--3A, V GS=--4.5V6585mΩ
R DS(on)2I D=--1.0A, V GS=--2.5V98137mΩ
R DS(on)3I D=--0.5A, V GS=--1.8V155235mΩInput Capacitance Ciss
V DS=--10V, f=1MHz
320pF Output Capacitance Coss66pF Reverse Transfer Capacitance Crss50pF Turn-ON Delay Time t d(on)
See specifi ed Test Circuit.
7.1ns Rise Time t r21ns Turn-OFF Delay Time t d(off) 37ns Fall Time t f32ns Total Gate Charge Qg
V DS=--10V, V GS=--4.5V, I D=--3A
4.0nC Gate-to-Source Charge Qgs0.6nC Gate-to-Drain “Miller” Charge Qgd 1.1nC Diode Forward Voltage V SD I S=--3A, V GS=0V--0.83--1.2V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
EMH2308-TL-H EMH83,000pcs./reel Pb Free and Halogen Free P.G
Ω
V= --10V
V OUT
V
Drain Current, I D --
A
Diode Forward V oltage, V SD -- V
S w i t c h i n g T i m e , S W T i m e -- n s
C i s s , C o s s , C r s s -- p F
Drain Current, I D -- A Drain-to-Source V oltage, V DS -- V
S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω
S t a t i c D r a i n -t o -S o u r c e O n -S t a t e R e s i s t a n c e , R D S (o n ) -- m Ω
Gate-to-Source V oltage, V GS -- V
Ambient Temperature, Ta -- °C
S o u r c e C u r r e n t , I S -- A
D r a i n C u r r e n t , I D -- A
Drain-to-Source V oltage, V DS -- V
D r a i n C u r r e n t , I D -- A
Gate-to-Source V oltage, V GS -- V
F o r w a r d T r a n s f e r A d m i t t a n c e , | y f s | -- S
IT14537
IT14538
0.11.010
--0.01
--0.1
IT14539
100IT14540
10100IT14535
IT14536
--1.0
IT14533
IT14534
Ambient Temperature, Ta -- °C
A l l o w a b l e P o w e r D i s s i
p a t i o n , P D -- W
Total Gate Charge, Qg -- nC
G a t e -t o -S o u r c e V o l t a g e , V G S -- V
Drain-to-Source V oltage, V DS -- V D r a i n C u r r e n t , I D -- A
IT14543
--1.0
--10--0.1
--0.01
IT14542IT14541
Embossed Taping Speci fi cation
EMH2308-TL-H
Outline Drawing Land Pattern Example EMH2308-TL-H
Note on usage : Since the EMH2308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
This catalog provides information as of July, 2012. Specifi cations and information herein are subject
to change without notice.
分销商库存信息: ONSEMI
EMH2308-TL-E。