SMNY2Z30 TO-92规格书 AUK推荐

KSD-T0A075-002
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SMNY2Z30
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Absolute maximum ratings (Ta=25C unless otherwise noted)
Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current Single pulsed avalanche energy
Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time (Note 3,4) Reverse recovery charge (Note 3,4) Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.2A IS=0.2A, VGS=0V dIF/dt=-100A/us Min. Typ. 270 0.27 Max. 0.2 1 1.4 Unit A A V ns uC
Symbol IG=1mA, VDS=0V
Min. 20
Typ. 24
Max. -
Unit V
Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
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SMNY2Z30
Electrical Characteristic Curves
Fig. 1 ID - VDS
2.4 3.5 5.5 -
ns
Gate-source charge (Note 3,4) Gate-drain charge (Note 3,4)
VDS=240V, VGS=10V ID=0.2A
-
nC
Source-Drain Diode Ratings and Characteristics (Ta=25C unless otherwise noted)
Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
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Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
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SMNY2Z30
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
Rev. date: 05-JUL-12
KSD-T0A075-002
Min. 300 1.5 72 10 1.4 0.5
Typ. 2 6 0.4 101 15 3.2 5 17 21 35 2.9 0.4 0.7
Max. 2.5 1 10 8 130 20 5 30 89 92 102 4.5 -
Unit V V uA uA S
pF
VDD=150V, ID=0.2A RG=25Ω
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Electrical Characteristic Curves (Continue)
Fig. 7 BVDSS - TJ Fig. 8 RDS(ON) - TJ
C
C
Fig. 9 ID - TC
Fig. 10 Safe Operating Area
*
Rev. date: 05-JUL-12(N Nhomakorabeate 2)
Symbol VDSS VGSS ID Ta=25C Ta=100C IDM IAS EAS IAR EAR PD TJ Tstg
Rating 300 20 0.2 0.12 1 0.2 0.17 0.2 0.06 0.6 150 -55~150
Unit V V A A A A mJ A mJ W C C
SMNY2Z30
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
High voltage: BVDSS=300V (Min.) Low gate charge: Qg=2.9nC (Typ.) Low drain-source On resistance: RDS(on)=8Ω (Max.) Built-in protection zener diode RoHS compliant device
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SMNY2Z30
Package Outline Dimensions
Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
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SMNY2Z30
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
Electrical Characteristics (Ta=25C unless otherwise noted)
Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance (Note 3) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time (Note 3,4) Turn-off delay time (Note 3,4) Fall time (Note 3,4) Total gate charge
Ordering Information
GDS
Part Number SMNY2Z30
Marking SMNY2Z30
Package TO-92
TO-92
Marking Information
SMNY 2Z30 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week)
9 8 7 6 5 4 3
Fig. 2 ID – VGS
-
Fig. 3 RDS(ON) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
=
Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
(Note 3,4)
Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=300V, VGS=0V VDS=0V, VGS=15V VGS=10V, ID=100mA VDS=10V, ID=100mA VDS=25V, VGS=0V, f=1MHz
Rev. date: 05-JUL-12
KSD-T0A075-002
www.auk.co.kr
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SMNY2Z30
Thermal Characteristics
Characteristic Thermal resistance, junction to ambient Symbol Rth(j-a) Rating Max. 200 Unit C/W
Gate to Source Zener Diode Characteristic (Ta=25C unless otherwise noted)
Characteristic Gate-Source breakdown voltage
Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=0.5mH, IAS=0.8A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature typical characteristics
Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
* Limited only maximum junction temperature