LDQ-N3402RI, 规格书,Datasheet 资料
mini smd 可编程数字AD型热释电红外传感器S22-P340R 使用说明书
MINI SMD 可编程数字AD 型热释电红外传感器Mini SMD Programmable AD Pyroelectric Infrared SensorsS22-P340R 使用说明书V1.2森霸传感科技股份有限公司Senba Sensing Technology Co.,Ltd.森霸传感科技股份有限公司1.企业及产品概况：1.1体系认证●ISO14001认证公司获得ISO14001认证，在遵守国家环保法的基础上，通过采取各种改进措施，实现企业可持续性发展。
●ISO 9001认证公司获得国际标准化机构（ISO）的品质保证标准-即“ISO 9001”的认证。
1.2关于欧盟ROHS指令ROHS指令：欧盟提出的“关于在电子电气设备中限制使用某些有害物质的指令2011/65/EC”，公司生产的所有产品均符合欧盟ROHS指令。
1.3产品型号及检测原理1.3.1产品规格型号：本产品为SMD 数字AD 型双元热释电红外传感器，产品型号为S22-P340R ，版本号为V1.2，若使用产品超出了产品列举的应用范围，请及时咨询产品应用或销售工程师。
1.3.2产品探测原理：传感器核心部件由热释电探测敏感元、红外滤光片和芯片IC三部分组成，其中探测敏感元为双元结构。
是一款用于低功耗运动检测的红外热释电传感器（PIR）。
利用MCU进行通信，当S22-P340R 进行连续运动传感时，MCU不需要激活，它只在检测到运动时才激活外部MCU。
运动检测结果通过输出中断信号发出。
运动检测的算法是可编程的，可以通过外部MCU配置来改变。
PIR信号在芯片上转换为一个14位的数字值，然后进入运动算法检测单元。
所有的信号处理都是数字化的，可支持运动检测结果输出和原始数据输出。
2.非商业用途说明森霸传感科技股份有限公司（以下简称森霸）免费授权用户非商业性使用本产品说明书，并为用户提供产品变更和咨询服务。
若要进行商业性的销售、复制、散发或其他商业活动，须事先获取森霸的书面授权和许可。
连接器库存表
8970 1903 1837
2000 3048 3000 1469
FSL-3810060LW-A6SN2022CJY
10061122-171110ELF HM2P07PNF284GFLF HM2P09PDE121N9LF 10052286-12307LF HM2P80PMA3W1GF HM2P80PMA3W1GFLF 51703-10400000CCLF HM2P70PDN281N9 HM2P80PDS2T1N9 HM2P80PDS2T1N9 51742-10403200CCLF 51940-151 51940-379LF 51740-10703206CALF HM2R21PA5108N9 HM2R70PA5108N9LF HM2P70PME129GFLF
BYD CAPELLA CITIZEN COILCRAFT
CompuPack COTEX COXOC CREE CREE CREE CSR CVILUX
1819 329 13045 5020
750 2000 18800 4000 1800 133 9680 3000
CY8C2143424LTXI
CY8CTMA340-48LQI-09 13-1220154CP FF18N-4A-R11A-3H 17JE-23090-38(D114AC)-FA DT-126VP-03P WKA500-10P MTA2-WNC-Q-TR DTSM-24S DTSMW-66N-V-T/R
MJTP1236G
ALPS ALPS
APEM
7461 1
2870
54-0490-6-R
TGK8L2410
ቤተ መጻሕፍቲ ባይዱ
Astron
ADUM3402中文资料
Figure 3. ADuM3402 Functional Block Diagram
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
The ADuM340x isolators provide three independent isolation channels in a variety of channel configurations and data rates (see the Ordering Guide). All models operate with the supply voltage on either side ranging from 2.7 V to 5.5 V, providing compatibility with lower voltage systems as well as enabling a voltage translation functionality across the isolation barrier. The ADuM340x isolators have a patented refresh feature that ensures dc correctness in the absence of input logic transitions and during power-up/power-down conditions.
LM340T127812中文资料
00778103
∆IQ = 1.3 mA over line and load changes.
Scale 1:1
00778138
© 2004 National Semiconductor Corporation DS007781
元器件交易网
The 5V, 12V, and 15V regulator options are available in the steel TO-3 power package. The LM340A/LM340/LM78XXC series is available in the TO-220 plastic power package, and the LM340-5.0 is available in the SOT-223 package, as well as the LM340-5.0 and LM340-12 in the surface-mount TO263 package.
Temperature Range (TA) (Note 2) LM140 LM340A, LM340 LM7808C
−55˚C to +125˚C 0˚C to +125˚C 0˚C to +125˚C
LM340A Electrical Characteristics
IOUT = 1A, 0˚C ≤ TJ ≤ + 125˚C (LM340A) unless otherwise specified (Note 4)
range of applications including local (on-card) regulation for
elimination of noise and distribution problems associated
LPN-RK系列双元件时延断电保护器技术数据手册说明书
LPN-RK — 250 Vac/125 Vdc, 1⁄10-60 A, dual element, time-delay fusesCatalog symbols:• LPN-RK(amp)SP (non-indicating)• LPN-RK(amp)SPI (indicating) Description:Ultimate protection Class RK1 dual element, current-limiting, time-delay fuses available with optional open fuse indication. Time-delay – 10 seconds (minimum) at 500% of rated current (8 seconds for 0-30A sizes). Specifications:Ratings• Volts• 250 Vac• 125 Vdc*• Amps 1/10-60A• IR• 300 kA Vac RMS Sym.• 100kA Vdc* Indicating versions not Vdc rated.Agency Information• cULus Listed file No. JDDZ.E4273• UL 248-12 – Class RK1 Fuses• CSA C22.2 No. 248.12 – Class RK1 Fuses• CELPN-RK-15/100SP LPN-RK-2-1/4SP LPN-RK-10SP LPN-RK-2/10SP LPN-RK-2-1/2SP LPN-RK-12SP LPN-RK-3/10SP LPN-RK-2-8/10SP LPN-RK-15SP LPN-RK-4/10SP LPN-RK-3SP LPN-RK-17-1/2SP LPN-RK-1/2SP LPN-RK-3-2/10SP LPN-RK-20SP LPN-RK-6/10SP LPN-RK-3-1/2SP LPN-RK-25SP LPN-RK-8/10SP LPN-RK-4SP LPN-RK-30SP LPN-RK-1SP LPN-RK-4-1/2SP LPN-RK-35SP* LPN-RK-1-1/8SP LPN-RK-5SP LPN-RK-40SP* LPN-RK-1-1/4SP LPN-RK-5-6/10SP LPN-RK-45SP* LPN-RK-1-4/10SP LPN-RK-6SP LPN-RK-50SP* LPN-RK-1-6/10SP LPN-RK-6-1/4SP LPN-RK-60SP* LPN-RK-1-8/10SP LPN-RK-8SP* Open fuse indication available by inserting the suffix “I,”e.g. LPN-RK-50SPI. Requires 75Vac minimum voltage. Indicating fuses are not Vdc rated.Carton quantity• 10Features and benefits• Industry’s only UL Listed and CSA Certified fuse with a 300 kA interrupting rating that allows for simple, worry-free installation in virtually any application.• Fast short-circuit protection and dual-element, time-delay performance provide ultimate protection.• Reduces existing fuse inventory by up to 33% when upgrading to Low-Peak fuses.• Consistent 2:1 ampacity ratios for all Low-Peak fuses make selective coordination easy.• Time-delay permits 130% FLA sizing for back-up motor protection.• Current-limitation protects downstream components against damaging thermal and magnetic effects of short-circuit currents.• Protects against single-phase motor damage.• Proper sizing can provide “no damage” Type 2 coordinated protection for NEMA and IEC motor controllers.2Technical Data 1003Effective July 2023LPN-RK — 250 Vac/125 Vdc, 1⁄10-60 A, dual element, time-delay fuses/bussmannseriesRecommended fuse blocks60RM25060-1_RM25060-2_RM25060-3_For additional information on the 250 volt fuse blocks, see data sheets no. 10289.Fuse reducers for Class R fuses100 A30 ANO.213-R 60 ANO.216-R 200 A 60 ANO.226-RFor additional information on Class R fuse reducers, see data sheet no. 1118.Dimensions — inTime-current curves - average melt 1/10 to 12 ampsAMP RATING3001001010.10.010.11101001000CURRENT IN AMPST I M E I N S E C O N D S0.10.20.150.30.40.6.500.811.251.622.53.2456.25810123Technical Data 1003Effective July 2023LPN-RK — 250 Vac/125 Vdc, 1⁄10-60 A, dual element, time-delay fuses /bussmannseriesTime-current curves - average melt 15 to 60 amps20A60A30AAMP RATING15A CURRENT IN AMPS20100100010,000T I M E I N S E C O N D S3001001010.10.01Current-limitation curvesCurrent-limiting effects10001000100020001000100030001000100050001000200010,0001000200015,0001000200020,0001000300025,0001000300030,0002000300035,0002000300040,0002000300050,0002000300060,0002000300070,0002000300080,0002000400090,00020004000100,00020004000150,00020004000200,00030005000250,00030005000300,0003000600060A30AA M P R A T I N GI N S T A N T A N E O U S P E A K L E T -T H R O U G H C U R R E N T I N A M P S400,00090008000700060006000300,000200,000100,00050004000400090,000300020001000300080,00070,00060,00050,00060,000200,00020,000200040,000100,00010,000100030,00080,00040,000800030,00020,00010,000300,000ARMS SYMMETRICAL CURRENT IN AMPSA-B = ASYMMETRICAL AVAILABLE PEAK (2.3 X SYM RMS AMPS)LPN-RK — 250 Vac/125 Vdc, 1⁄10-60 A, dual element, time-delay fusesTechnical Data 1003Effective July 2023Follow us on social media to get thelatest product and support information.The only controlled copy of this data sheet is the electronic read-only version located on the Eaton network drive. All other copies of this document are by definition uncontrolled. This bulletin is intended to clearly present comprehensive product data and provide technical information that will help the end user with design applications. Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin. Once a product has been selected, it should be tested by the user in all possible applications.Eaton, Bussmann and Low-Peak are valuable trademarks of Eaton in the U.S. and other countries. Y ou are not permitted to use the Eaton trademarks without prior written consent of Eaton.CSA is a registered trademark of the Canadian Standards Group.UL is a registered trademark of the Underwriters Laboratories, Inc.Eaton1000 Eaton Boulevard Cleveland, OH Bussmann Division 114 Old State Road Ellisville, MO 63021United States/bussmannseries © 2023 EatonAll Rights Reserved Printed in USAPublication No. 1003July 2023。
英飞凌 FP50R12N2T7P EconoPIM 2 模块 数据表
EconoPIM ™2 模块 采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管 带有温度检测NTC 和预涂导热介质特性•电气特性-V CES = 1200 V-I C nom = 50 A / I CRM = 100 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-预涂导热介质-焊接技术可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。
描述FP50R12N2T7PEconoPIM ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4二极管,整流器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5IGBT, 斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6Diode-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 10封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 11模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .191封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE35nH 模块引线电阻,端子-芯片R AA'+CC'T H=25°C, 每个开关 5.5mΩ模块引线电阻,端子-芯片R CC'+EE'T H=25°C, 每个开关 4.8mΩ储存温度T stg-40125°C 最高基板工作温度T BPmax150°CM5, 螺丝36Nm 模块安装的安装扭距M根据相应的应用手册进行安装重量G180g注:The current under continuous operation is limited to 50 A rms per connector pin.Storage and shipment of modules with TIM => see AN2012-072IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 90 °C50A 集电极重复峰值电流I CRM t P = 1 ms100A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 50 A, V GE = 15 V T vj = 25 °C 1.50 1.80VT vj = 125 °C 1.64T vj = 175 °C 1.72栅极阈值电压V GEth I C = 2 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.92µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V11.1nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.039nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.01mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.059µs T vj = 125 °C0.061T vj = 175 °C0.062上升时间(感性负载)t r I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.043µs T vj = 125 °C0.047T vj = 175 °C0.049关断延迟时间(感性负载)t doff I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.290µs T vj = 125 °C0.380T vj = 175 °C0.420下降时间(感性负载)t f I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.110µs T vj = 125 °C0.200T vj = 175 °C0.270开通损耗能量 (每脉冲)E on I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 7.5 Ω, di/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 5.07mJ T vj = 125 °C 6.76T vj = 175 °C7.72关断损耗能量 (每脉冲）E off I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 7.5 Ω, dv/dt =2900 V/µs (T vj = 175 °C)T vj = 25 °C 3.37mJ T vj = 125 °C 5.31T vj = 175 °C 6.58(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C190At P≤ 7 µs,T vj=175 °C180结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material0.777K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F50A 正向重复峰值电流I FRM t P = 1 ms100A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C465A²sT vj = 175 °C420表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM I F = 35 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C31A T vj = 125 °C39T vj = 175 °C45恢复电荷Q r I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 3.96µC T vj = 125 °C7.37T vj = 175 °C9.89(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗（每脉冲）E rec I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 1.31mJ T vj = 125 °C 2.52T vj = 175 °C 3.46结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.13K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4二极管,整流器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1600V 最大正向均方根电流(每芯片)I FRMSM T H = 60 °C70A最大整流器输出均方根电流I RMSM T H = 60 °C100A 正向浪涌电流I FSM t P = 10 ms T vj = 25 °C560AT vj = 150 °C435I2t-值I2t t P = 10 ms T vj = 25 °C1570A²sT vj = 150 °C945表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A T vj = 150 °C 1.05V 反向电流I r T vj = 150 °C, V R = 1600 V1mA 结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.10K/W 允许开关的温度范围T vj, op-40150°C5IGBT, 斩波器表 9最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 110 °C25A 集电极重复峰值电流I CRM t P = 1 ms50A 栅极－发射极峰值电压V GES±20V表 10特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 25 A, V GE = 15 V T vj = 25 °C 1.60 1.85VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.525 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.395µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 4.77nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.017nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.004mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.041µs T vj = 125 °C0.043T vj = 175 °C0.044上升时间(感性负载)t r I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.025µs T vj = 125 °C0.028T vj = 175 °C0.030关断延迟时间(感性负载)t doff I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.230µs T vj = 125 °C0.320T vj = 175 °C0.350下降时间(感性负载)t f I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.140µs T vj = 125 °C0.220T vj = 175 °C0.280(待续)表 10(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值开通损耗能量 (每脉冲)E on I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 9.1 Ω, di/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.47mJ T vj = 125 °C 2.05T vj = 175 °C 2.39关断损耗能量 (每脉冲）E off I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 9.1 Ω, dv/dt =3120 V/µs (T vj = 175 °C)T vj = 25 °C 1.65mJ T vj = 125 °C 2.58T vj = 175 °C 3.13短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C90At P≤ 7 µs,T vj=175 °C85结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material1.19K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.6Diode-斩波器表 11最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F25A 正向重复峰值电流I FRM t P = 1 ms50A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C125A²sT vj = 175 °C95表 12特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 25 A, V GE = 0 V T vj = 25 °C 1.83 2.30VT vj = 125 °C 1.70T vj = 175 °C 1.63(待续)表 12(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复峰值电流I RM I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C21.7A T vj = 125 °C26.7T vj = 175 °C29.8恢复电荷Q r I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.69µC T vj = 125 °C 3.29T vj = 175 °C 4.29反向恢复损耗（每脉冲）E rec I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C0.63mJ T vj = 125 °C 1.28T vj = 175 °C 1.69结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.63K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.7负温度系数热敏电阻表 13特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7 负温度系数热敏电阻9电路拓扑图图 110封装尺寸图 211模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002022-02-01Initial version商标所有参照产品或服务名称和商标均为其各自所有者的财产。
ADuM3400_3401_3402_CN
2.0 VDD1,2-0.1
-18 -22 Min 2.7 2.7
1.6 VDD1,2-0.1
ADuM3400/1/2
图 1,ADuM3400 功能框图
图 2,ADuM3401 功能框图
三、应用
图 3,ADuM3402 功能框图
� 通用型多通道的隔离 � SPI 接口和数字转换器的隔离
� RS-232/RS-422/RS-485 收发器隔离 � 工业现场总线隔离
四、典型应用参数
VDD1=VDD2=5V，TA=25℃ 工作参数
32
2
-40~105 SOW-16
100
40
-40~105 SOW-16
50
3
-40~105 SOW-16
32
2
-40~105 SOW-16
第8页/共 10 页
ADuM3400/1/2
声明
本中文资料是根据 ADI 官方提供的英文数据手册相关内容翻译和直接引用而得。仅用于帮助工程师更 快更好的了解该芯片基本功能，译文中可能存在文字组织或翻译错误，不对文档中存在的翻译差异及由此 产生的错误负责。最终解释权归北京晶圆智通科技有限公司所有，未经本公司授权，任何单位及个人不得 非法修改、拷贝和盈利。本公司拥有对此资料所有权及修改权且无需提前通知客户的权利。如需涉及更准 确性的资料，请参考原始英文版本资料。 /static/imported-files/data_sheets/ADUM3400_3401_3402.pdf 版本信息 题目： 四通道数字隔离器——ADuM340x 来源:北京晶圆智通科技有限公司 更新时间：2009-11 V1.3
AO3402资料
DS
Figure 1. Output Characteristics
0.070
0.065
On Resistance (Ω)
0.060
0.055 0.050
V =4.5V GS
0.045
0.040 0.035
V =10V GS
0.030
2
4
6
8
10
I , Drain Current (A)
Figure 3. On ReDsistance vs. Drain Current
AO3402
z Typical Performance Characteristics
12 V =10.0V
GS
V =6.0V GS
9
V =4.0V GS
VGS=3.5V
I , Drain Current (A)
D
6 V =3.0V
GS
3 V =2.5V
GS
0
0
1
2
3
4
5
V , Drain-Source Voltage (V)
2.5
V , Gate-Source (V) TH
2.0
1.5
1.0
V =10V DS
0.5
I =250uA
d
0.0 0
20 40 60 80 100 120
Tj, Junction Temperature (oC)
Figure 5. Gate Thershold Vs. Temperature
On Resistance (m Ω)
PD
Junction and Storage Temperature Range
LTC3402资料
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.12LTC3402(Note 1)V IN , V OUT Voltages...................................... –0.5V to 6V SW Voltage................................................. –0.5V to 6V V C , R t , FB, MODE,SHDN Voltages........................... –0.5V to (V OUT to 3V)PGOOD....................................................... –0.5V to 6V Operating Temperature Range (Note 2)..–40°C to 85°C Storage Temperature Range.................–65°C to 125°C Lead Temperature (Soldering, 10 sec)..................300°CT JMAX = 125°CθJA = 130°C/W 1 LAYER BOARD θJA = 100°C/W 4 LAYER BOARDMS10 PART MARKINGORDER PART NUMBER LTC3402EMS LTSKConsult factory for Industrial and Military grade parts.The q denotes specifications that apply over the full operating temperature range, otherwise specifications are at T A = 25°C.V IN = 1.2V, V OUT = 3.3V unless otherwise noted.PARAMETERCONDITIONS MIN TYP MAX UNITSMinimum Start-Up Voltage I LOAD = <1mA 0.851.0V Minimum Operating Voltage (Note 4)q 0.5V Output Voltage Adjust Range q 2.65V Feedback Voltage q1.221.25 1.28V Feedback Input CurrentV FB = 1.25V150nA Quiescent Current—Burst Mode Operation V C = 0V, MODE/SYNC = 3.3V (Note 3)3865µA Quiescent Current—SHDN SHDN = 0V, Not Including Switch Leakage 0.11µA Quiescent Current—Active V C = 0V, MODE/SYNC = 0V, R t = 300k (Note 3)440800µA NMOS Switch Leakage 0.15µA PMOS Switch Leakage 0.110µA NMOS Switch On Resistance 0.16ΩPMOS Switch On Resistance 0.18ΩNMOS Current Limit q2 2.5A NMOS Burst Current Limit 0.66A Maximum Duty Cycle R t = 15kq 8085%Minimum Duty Cycle q 0%Switching Frequency R t = 15k q 1.622.4MHz MODE/SYNC Input High 1.4V MODE/SYNC Input Low 0.4V MODE/SYNC Input Current V MODE/SYNC = 5.5V 0.011µA Error Amp Transconductance ∆I = –5µA to 5µA, V C = V FB 85µmhosPGOOD ThresholdReferenced to Feedback Voltage–6–9–12%ABSOLUTE AXI U RATI GSW W WU PACKAGE/ORDER I FOR ATIOU U WELECTRICAL CHARACTERISTICS12345R t MODE V IN SW GND109876SHDN V C FB V OUT PGOODTOP VIEWMS10 PACKAGE 10-LEAD PLASTIC MSOPLTC3402 The q denotes specifications that apply over the full operating temperature range, otherwise specifications are at T A = 25°C.V IN = 1.2V, V OUT = 3.3V unless otherwise noted.PARAMETER CONDITIONS MIN TYP MAX UNITS PGOOD Low Voltage I PGOOD = 1mA0.10.2VV OUT = 1V, I PGOOD = 20µA0.10.4V PGOOD Leakage V PGOOD = 5.5V0.011µA SHDN Input High V IN = V SHDN1V SHDN Input Low0.4V SHDN Input Current V SHDN = 5.5V0.011µA ELECTRICAL CHARACTERISTICSNote 1: Absolute Maximum Ratings are those values beyond which the lifeof a device may be impaired.Note 2: The LTC3402E is guaranteed to meet performance specificationsfrom 0°C to 70°C. Specifications over the –40°C to 85°C operatingtemperature range are assured by design, characterization and correlationwith statistical process controls.Note 3: Current is measured into the V OUT pin since the supply current isbootstrapped to the output pin and in the application will reflect to theinput supply by (V OUT/V IN) • Efficiency. The outputs are not switching.Note 4: Once the output is started, the IC is not dependent upon the V INsupply.TYPICAL PERFOR A CE CHARACTERISTICSUWSwitching Waveform on SW PinSW Pin and Inductor Current (I C)in Discontinuous Mode. RingingControl Circuitry Eliminates HighFrequency Ringing Transient Response 5mA to 50mASW1V/DIV50ns/DIV3402 G01SW1V/DIV200ns/DIV3402 G020V0AI L50mA/DIVI OUTC OUT = 22µF200µs/DIV3402 G03L = 3.3µHf OSC = 1MHzV OUT100mV/DIV50mA5mA(T A = 25°C unless otherwise noted)3LTC3402456LTC3402R t (Pin 1): Timing Resistor to Program the Oscillator Frequency.f R HzOSC t=31010•MODE/SYNC (Pin 2): Burst Mode Select and Oscillator Synchronization.MODE/SYNC = High. Enable Burst Mode operation. The inductor peak inductor current will be 1/3 the current limit value and return to zero current on each cycle.During Burst Mode operation the operation is variable frequency, providing a significant efficiency improve-ment at light loads. It is recommended the Burst Mode operation only be entered once the part has started up.MODE/SYNC = Low. Disable Burst Mode operation and maintain low noise, constant frequency operation.MODE/SYNC = External CLK. Synchronization of the internal oscillator and Burst Mode operation disable. A clock pulse width of 100ns to 2µs is required to synchronize.V IN (Pin 3): Input Supply Pin.U U UPI FU CTIO SSW (Pin 4): Switch Pin. Connect inductor and optional Schottky diode here. Minimize trace length to keep EMI and high ringing down. For discontinuous inductor cur-rent, a controlled impedance is placed from SW to V IN from the IC to eliminate high frequency ringing due to the resonant tank of the inductor and SW node capacitance,therefore reducing EMI radiation.GND (Pin 5): Signal and Power Ground for the IC.PGOOD (Pin 6): Power Good Comparator Output. This open-drain output is low when V FB < –9% from its regulation voltage.V OUT (Pin 7): Output of the Synchronous Rectifier and Bootstrapped Power Source for the IC.FB (Pin 8): Feedback Pin. Connect resistor divider tap here. The output voltage can be adjusted from 2.6V to 5V.The feedback reference voltage is typically 1.25V.V C (Pin 9): Error Amp Output. A frequency compensation network is connected to this pin to compensate the loop.See the section “Compensating the Feedback Loop” for guidelines.SHDN (Pin 10): Shutdown. Grounding this pin shuts down the IC. Tie to ≥1V to enable. 1m Ω to V IN is sufficient. An additional resistor to V OUT (5m Ω) will allow the IC to operate lower once started.78LTC3402APPLICATIO S I FOR ATIOW UUU DETAILED DESCRIPTIONThe LTC3402 provides high efficiency, low noise power for applications such as portable instrumentation. The current mode architecture with adaptive slope compensa-tion provides ease of loop compensation with excellent transient load response. The low R DS(ON), low gate charge synchronous switches provide the pulse width modula-tion control at high efficiency.The Schottky diode across the synchronous PMOS switch is not required, but provides a lower drop during the break-before-make time (typically 20ns) of the NMOS to PMOS transition. The addition of the Schottky diode will improve peak efficiency by typically 1% to 2%. While the IC’s quiescent current is a low 38µA, high efficiency is achieved at light loads when Burst Mode operation is entered.Low Voltage Start-UpThe LTC3402 is designed to start up at input voltages of typically 0.85V. The device can start up under some load,(see graph Start-Up vs Input Voltage). Once the output voltage exceeds a threshold of 2.3V, then the IC powers itself from V OUT instead of V IN . At this point, the internal circuitry has no dependency on the V IN input voltage,eliminating the requirement for a large input capacitor.The input voltage can drop below 0.5V without affecting the operation, but the limiting factor for the application becomes the availability of the power source to supply sufficient energy to the output at the low voltages.Low Noise Fixed Frequency OperationOscillator . The frequency of operation is set through a resistor from the R t pin to ground where f = 3 • 1010/R t . An internally trimmed timing capacitor resides inside the IC.The oscillator can be synchronized with an external clock inserted on the MODE/SYNC pin. When synchronizing the oscillator, the free running frequency must be set to approximately 30% lower than the desired synchronized frequency. Keeping the sync pulse width below 2µs will ensure that Burst Mode operation is disabled.Current Sensing . Lossless current sensing converts the peak current signal to a voltage to sum in with the internal slope compensation. This summed signal is compared tothe error amplifier output to provide a peak current control command for the PWM. The slope compensation in the IC is adaptive to the input and output voltage. Therefore, the converter provides the proper amount of slope compensa-tion to ensure stability and not an excess causing a loss of phase margin in the converter.Error Amp . The error amplifier is a transconductance amplifier with g m = 0.1ms. A simple compensation net-work is placed from the V C pin to ground.Current Limit . The current limit amplifier will shut the NMOS switch off once the current exceeds its threshold.The current amplifier delay to output is typically 50ns.Zero Current Amp . The zero current amplifier monitors the inductor current to the output and shuts off the synchro-nous rectifier once the current is below 50mA, preventing negative inductor current.Antiringing Control . The anitringing control will place an impedance across the inductor to damp the ringing on the SW pin during discontinuous mode operation. The LC SW ringing (L = inductor, C SW = capacitance on the switch pin)is low energy, but can cause EMI radiation.Burst Mode OperationBurst Mode operation is when the IC delivers energy to the output until it is regulated and then goes into a sleep mode where the outputs are off and the IC is consuming only 38µA. In this mode, the output ripple has a variable frequency component with load current and the steady state ripple will be typically below 3%.During the period where the device is delivering energy to the output, the peak current will be equal to 1/3 the current limit value and the inductor current will terminate at zero current for each cycle. In this mode the maximum output current is given by:I V V AmpsOUT MAXBURST INOUT()•≈6Burst Mode operation is user controlled by driving the MODE/SYNC pin high to enable and low to disable. It is recommended that Burst Mode operation be entered after the part has started up.9LTC340210111213141516© Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 q F AX: (408) 434-0507 q 。
DATASHEET (TP4054 线性锂离子电池充电器)
间，并应通过至少一个 1μF 电容器进行旁 路。当 VCC 降至 BAT 引脚电压的 30mV 以 内，TP4054 进入停机模式，从而使 IBAT 降至 2μA 以下。 PROG（引脚 5） ：充电电流设定、充电电流 监控和停机引脚。 在该引脚与地之间连接一 个精度为 1%的电阻器 RPROG 可以设定充电 电流。当在恒定电流模式下进行充电时，引 脚的电压被维持在 1V。 PROG 引脚还可用来关断充电器。将设定电 阻器与地断接，内部一个 2.5μA 电流将 PROG 引脚拉至高电平。当该引脚的电压达 到 2.70V 的停机门限电压时， 充电器进入停 机模式，充电停止且输入电源电流降至 45μA。重新将 RPROG 与地相连将使充电器 恢复正常操作状态。
TEL:0755-82863877 13242913995 FAX:0755-82863778 E-MAIL:panxia168@
DATASHEET
(TP4054 线性锂离子电池充电器)
1
TP4054 线性锂离子电池充电器
描述
TP4054 是一款完整的单节锂离子电池采用恒定电流/恒定电压线性充电器。其 SOT 封装与较少的外部元件数目使得 TP4054 成为便携式应用的理想选择。 TP4054 可以适合 USB 电源和适配器电源工作。 由于采用了内部 PMOSFET 架构，加上防倒充电路，所以不需要外部检测电阻器和 隔离二极管。热反馈可对充电电流进行调节，以便在大功率操作或高环境温度条件下对 芯片温度加以限制。 充电电压固定于 4.2V， 而充电电流可通过一个电阻器进行外部设置。 当充电电流在达到最终浮充电压之后降至设定值 1/10 时， TP4054 将自动终止充电循环。 当输入电压（交流适配器或 USB 电源）被拿掉时，TP4054 自动进入一个低电流状 态，将电池漏电流降至 2uA 以下。也可将 TP4054 置于停机模式，以而将供电电流降至 45uA。TP4054 的其他特点包括充电电流监控器、欠压闭锁、自动再充电和一个用于指 示充电结束和输入电压接入的状态引脚。
sd2403APIdatasheet
3
1
1
倒计时中断输出
(1) 报警中断
当 INTAE=1 时报警中断被允许,报警中断何时发生由时间报警寄存器(07H~0EH)来确定。这其
中 07H~0DH 依次用于存放报警时间的秒、分钟、小时、星期、日、月、年数据,除小时报警数据寄
存器的最高位始终为”0” 、星期位的定义不同以外，其它的格式与实时时钟寄存器相同。
D2 S4 MN4
H4
W4 D4 MO4 Y4 AS4 AMN4
AH4
AW2 AD4 AMO4 AY2 EAH WRTC2 INTDE FS2 F2
TD2
BIT2
D1 S2 MN2
H2
W2 D2 MO2 Y2 AS2 AMN2
AH2
AW1 AD2 AMO2 AY1 EAMN 0 INTAE FS1 F1
SD2403AP
I IC 串行接口的实时时钟 IC V2.0
内置晶振、I IC 串行接口的高精度实时时钟 IC- SD2403AP Ver2.0
1. 概述
SD2403AP 是一种内置晶振、具有标准 IIC 接口的实时时钟芯片,CPU 可使用该接口通过 5 位地址寻址来读
写片内 32 字节寄存器的数据(包括时间寄存器、报警寄存器、控制寄存器、通用 SRAM 寄存器)。
0-255 0000-0000
N/A
XXXX-XXXX
5.2 实时时钟数据寄存器(00H~06H) 实时时钟数据寄存器是 7 字节的存储器，它以 BCD 码方式存贮包括年、月、日、星期、时、分、
秒的数据。 年数据[06H 地址]（00~99）：设置千年（20XX）的后两位数字（00~99），通过自动日历功能计至
MN8
常用场效应管与三极管参数
150W
*
*
NPN
BU2522
1500V
11A
150W
*
*
NPN
BU2520
800V
10A
150W
*
*
NPN
BU2508
700V
8A
125W
*
*
NPN
BU2506
1500V
7A
50W
*
*
NPN
BU932R
500V
15A
150W
*
*
NPN
BU806
400V
8A
60W
*
*
NPN
BU406
400V
7A
50V
0.1A
0.4W
*
150MHZ
NPN
9013
50V
0.5A
0.6W
*
*
NPN
9012
50V
0.5A
0.6W
*
*
PNP
9011
50V
0.03A
0.4W
*
150MHZ
NPN
TIP147
100V
10A
125W
*
*
PNP
TIP142
100V
10A
125W
*
*
NPN
TIP127
100V
8A
65W
*
*
PNP
650V
15A
175W
*
*
NPN
2N5685
60V
50A
300W
*
*
NPN
2N6277
安森美MBRA340T3-D 肖特基功率二极管 用户手册说明书
Surface MountSchottky Power RectifierSMA Power Surface Mount PackageMBRA340, NRVBA340,NRVBA340NEmploying the Schottky Barrier principle in a large area metal −to −silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.Features•Small Compact Surface Mountable Package with J −Bent Leads •Rectangular Package for Automated Handling •Highly Stable Oxide Passivated Junction •Very Low Forward V oltage Drop •Guardring for Stress Protection•NRVBA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC −Q101Qualified and PPAP Capable*•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS CompliantMechanical Characteristics:•Case: Epoxy, Molded•Weight: 70 mg (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Polarity: Cathode Lead Indicated by Polarity Band •ESD Ratings:♦Machine Model = C♦Human Body Model = 3B•Device Meets MSL 1 RequirementsDevicePackageShipping †ORDERING INFORMATIONSCHOTTKY BARRIERRECTIFIER 3.0 AMPERES 40 VOLTSMARKING DIAGRAMSMA CASE 403D STYLE 1A34AYWWGMBRA340T3G NRVBA340T3G NRVBA340T3G −VF01NRVBA340NT3G*Cathode AnodeA34= Device Code A = Assembly Location**Y = Year WW = Work Week G = Pb −Free Package12SMA (Pb −Free)5,000 / Tape & Reel†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.**The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin),the front side assembly code may be blank.(Note: Microdot may be in either location)MAXIMUM RATINGSRatingSymbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V R 40VAverage Rectified Forward Current (At Rated V R , T L = 100°C)I O 3.0A Non −Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM 100A Storage/Operating Case Temperature T stg , T C −55 to +150°C Operating Junction Temperature (Note 1)T J −55 to +150°C Voltage Rate of Change (Rated V R , T J = 25°C)dv/dt10,000V/m sStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.The heat generated must be less than the thermal conductivity from Junction −to −Ambient: dP D /dT J < 1/R q JA .THERMAL CHARACTERISTICSCharacteristicSymbol Value Unit Thermal Resistance − Junction −to −Lead (Note 2)Thermal Resistance − Junction −to −Ambient (Note 2)R θJL R θJA1581°C/W2.Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.ELECTRICAL CHARACTERISTICSCharacteristicSymbol ValueUnit Maximum Instantaneous Forward Voltage (Note 3)(I F = 3.0 A)V FT J = 25°C T J = 100°C Volts0.4500.390Maximum Instantaneous Reverse Current (V R = 40 V)I R T J = 25°CT J = 100°CmA 0.315Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.3.Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.TYPICAL CHARACTERISTICSFigure 1. Typical Forward VoltageFigure 2. Maximum Forward Voltage1010.1V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)I F , IN S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )1010.1V F , MAXIMUM INSTANTANEOUS FORWARDVOLTAGE (VOLTS)I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse CurrentV R , REVERSE VOLTAGE (VOLTS)100E −10E −10E −100E −I R , R E V E R S E C U R R E N T (A M P S )100E −100E −1E −1E −10E −1E −V R , REVERSE VOLTAGE (VOLTS)100E −10E −10E −100E −I R )1E −1E −Figure 5. Current Derating02.5I O , A V E R A G E F O R W A R D C U R R E N T (A M P S )T L , LEAD TEMPERATURE (°C)Figure 6. Forward Power Dissipation1.800.6I O , AVERAGE FORWARD CURRENT (AMPS)P F O , A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )Figure 7. Capacitance0.511.52533.54.50.20.41.00.81.6Figure 8. Typical Operating TemperatureDeratingV R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )V R , DC REVERSE VOLTAGE (VOLTS)115T J , D E R A T E D O P E R A T I N G T E M P E R A T U R E (°C )1.41.24Figure 9. Thermal Response, Junction −to −Ambient (min pad)t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )Figure 10. Thermal Response, Junction to Ambient (1 inch pad)t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )1100SCALE 1:1SMA CASE 403D ISSUE JDATE 22 OCT 2021xxxx = Specific Device Code A = Assembly Location Y = YearWW = Work WeekG= Pb −Free PackageSTYLE 1:PIN 1.CATHODE (POLARITY BAND)2.ANODESTYLE 2:NO POLARITYSTYLE 1STYLE 2STYLE 1STYLE 2xxxx AYWWG xxxx AYWW G GENERICMARKING DIAGRAM**This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。
TH3401 TH3402 规格书
工作电压：4.5V～5.5V 双端口控制功能（TH3402 ）：可同时独立支持
两路 USB 充电协议检测 支持多种USB充电协议，各充电协议自动切换，
包括： Divider1/Divider2/Divider3充电协议（苹果
专用） D+/D–置1.2V模式（三星专用） BC1.2 DCP及CTIS YD/T 1591-2009充电
5/9
6.应用电路图
TH3401/TH3402_SPEC
TH3401A TH3401
图 3 TH3401/TH3401A 电路示意图 TH3402
TH3402B
TH3402A
图4
电路示意图
说明：
1. TH3402 的两组 DP/DM 等同，通过与 USB 端子 D+/D-的不同连接配置为 Divider1 或 2 协议以匹配
SOT23-6L
Tape and Reel / 3000 units
TH3402A
SOT23-6L
Tape and Reel / 3000 units
TH3402B
SOT23-6L
Tape and Reel / 3000 units
产品印章
TH3401 X Wxxxx TH3401A X Wxxxx TH3402 X Wxxxx TH3402A X Wxxxx TH3402B X Wxxxx
TH3401/TH3402_SPEC
USB 充电协议端口控制器 TH3401/TH3402
规格书
Revision 2.1 2015-1-16
1/9
TH3401/TH3402_SPEC
目录
1. 简介 .............................................................................................................................................. 3 2. 特性 .............................................................................................................................................. 3 3. 封装引脚示意图 ............................................................................................................................. 3 4. 定购信息 ....................................................................................................................................... 4 5. 功能描述 ....................................................................................................................................... 5
SOD-123型号的塑封稳压二极管商品说明书
SOD-123贴片塑封稳压二极管SOD-123 Plastic-Encapsulate Zener Diode特征Featuresz 齐纳击穿阻抗低; Low Zener Impedancez 最大功率耗散500mW; Power Dissipation of 500mW z 高稳定性和可靠性。
High Stability and High Reliability 机械数据Mechanical DataSOD-123z 封装: SOD-123封装SOD-123 Small Outline Plastic Package z 极性: 色环端为负极Polarity: Color band denotes cathode end z 环氧树脂UL 易燃等级Epoxy UL: 94V-0 z安装位置: 任意Mounting Position: Any极限值和温度特性(TA = 25℃ 除非另有规定)Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters符号Symbol 数值Value 单位Unit功率消耗Power DissipationPd 500 mW正向压降Forward Voltage @IF=10mA Vf 0.9 V存储温度Storage temperature rangeTs -65-+150℃ 1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²2) Short duration test pulse used to minimize self-heating effect 3)f=1KHz电特性 (TA = 25℃ 除非另有规定)Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt IztZzt @Izt Zzk @IzkIzk IR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mA BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.050 1.0 -3.5 0 5 BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.020 1.0 -3.5 0 5 BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.010 1.0 -3.5 0 5 BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 05BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 15.0 2.5 5.3 5BZT52B8V2 2WD 8.2 8.04 8.36 5 1580 1.00.7 5.0 3.2 6.2 5 BZT52B9V1 2WE 9.1 8.929.28 5 15 100 1.00.5 6.0 3.8 7.0 5 BZT52B10 2WF 10 9.80 10.20 5 20 150 1.00.2 7.0 4.5 8.0 5 BZT52B11 2WG 11 10.78 11.22 5 20 150 1.00.1 8.0 5.4 9.0 5 BZT52B12 2WH 12 11.76 12.24 5 25 150 1.00.1 8.0 6.0 10.0 5 BZT52B13 2WI 13 12.74 13.26 5 30 170 1.00.1 8.0 7.0 11.051) 2)Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt Izt Zzt @Izt Zzk @IzkIzkIR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mABZT52B15 2WJ 15 14.70 15.30 5 30 200 1.00.1 10.5 9.2 13.0 5 BZT52B16 2WK 16 15.68 16.32 5 40 200 1.00.1 11.2 10.4 14.0 5 BZT52B18 2WL 18 17.64 18.36 5 45 225 1.00.1 12.6 12.4 16.0 5 BZT52B20 2WM 20 19.60 20.40 5 55 225 1.00.1 14.0 14.4 18.0 5 BZT52B22 2WN 22 21.56 22.44 5 55 250 1.00.1 15.4 16.4 20.0 5 BZT52B24 2WO 24 23.52 24.48 5 70 250 1.00.1 16.8 18.4 22.0 5 BZT52B27 2WP 27 26.46 27.54 2 80 300 0.50.1 18.9 21.4 25.3 2 BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.50.1 21.0 24.4 29.4 2 BZT52B33 2WR 33 32.34 33.66 2 80 325 0.50.1 23.1 27.4 33.4 2 BZT52B36 2WS 36 35.28 36.72 2 90 350 0.50.1 25.2 30.4 37.4 2 BZT52B39 2WT 39 38.22 39.78 2 130 350 0.50.1 27.3 33.4 41.2 2 BZT52B43 2WU 43 41.16 43.84 2 100 700 1.00.1 32.0 10.0 12.0 5 BZT52B47 2WV 47 46.06 47.94 2 100 750 1.00.1 35.0 10.0 12.0 5 BZT52B51 2WW 51 49.98 52.02 2 100 750 1.00.1 38.0 10.0 12.05Breakdown characteristicsat Tj=constant (pulsed)Forward characteristicsAdmissible power dissipation versus ambient temperaturePulse thermal resistance versus pulse durationDynamic resistance versus Zener currentCapacitance versus Zener voltageDynamic resistance versus Zener current Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltageDynamic resistance versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageChange of Zener voltage versus junction temperatureChange of Zener voltage versus junction temperatureChange of Zener voltge from turn-on up to the point of thermalequilibrium versus Zener voltageSOD-123 PACKAGE OUTLINE Plastic surface mounted package焊盘设计参考Precautions: PCB DesignRecommended land dimensions for SOD-123 diode. Electrode patterns for PCBs中心距: 3.24 脚宽: 0.55 焊盘宽: 1.00 脚长: 0.50 焊盘长: 0.80 技术要求:1, 塑封体尺寸: 2.70 X 1.60 2: 未注公差为: ±0.053, 所有单位: mm。
MPN3404G;中文规格书,Datasheet资料
© Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 31Publication Order Number:MPN3404/DMPN3404Silicon Pin DiodeThis device is designed primarily for VHF band switching applications but is also suitable for use in general−purpose switching circuits. It is supplied in a cost−effective TO−92 type plastic package for economical, high−volume consumer and industrial requirements. Features•Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability•Low Series Resistance @ 100 MHz: R S = 0.7 W (Typ) @ I F = 10 mAdc •Sturdy TO−92 Style Package for Handling Ease•Pb−Free Packages are Available*MAXIMUM RATINGSRating Symbol Value Unit Reverse Voltage V R20VdcForward Power Dissipation @ T A = 25°CDerate above 25°C P D4004.0mWmW/°CJunction Temperature T J+125°C Storage Temperature Range T stg−55 to +150°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage(I R = 10 m Adc)V(BR)R20−−VdcDiode Capacitance(V R = 15 Vdc, f = 1.0 MHz)C T− 1.3 2.0pFSeries Resistance (Figure 5)(I F = 10 mAdc)R S−0.70.85WReverse Leakage Current(V R = 15 Vdc)I R−−0.1m Adc*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.MARKING DIAGRAMA= Assembly LocationY= YearWW= Work WeekG= Pb−Free PackageDevice ShippingORDERING INFORMATIONMPN3404TO−92MPN3404G TO−92(Pb−Free)(Note: Microdot may be in either location)MPN3403AYWW GGPackage1000 Units / Bulk1000 Units / Bulk2TYPICAL CHARACTERISTICSFigure 2. Forward VoltageV F , FORWARD VOLTAGE (VOLTS)Figure 3. Diode Capacitance T A , AMBIENT TEMPERATURE (°C)Figure 4. Leakage Current5040, R E V E R S E C U R R E N T ( A )1000.010.001I R 0.11.0101.61.20.80.4R S , S E R I E S R E S I S T A N C E (O H M S )1.41.00.61.83020100I F , F O R W A R D C U R R E N T (m A )V R , REVERSE VOLTAGE (VOLTS)C T , D I O D E C A P A C I T A N C E (p F )μ0.040.0044.0400.4PACKAGE DIMENSIONSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.STYLE 1:PIN 1.ANODE2.CATHODEPLANEDIM MIN MAX MIN MAX MILLIMETERS INCHESA 0.1750.205 4.45 5.21B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.050 BSC 1.27 BSC H 0.100 BSC 2.54 BSC J 0.0140.0160.360.41K 0.500−−−12.70−−−L 0.250−−− 6.35−−−N 0.0800.105 2.03 2.66P −−−0.050−−− 1.27R 0.115−−− 2.93−−−V 0.135−−− 3.43−−−TO−92 (TO−226)CASE 182−06ISSUE LON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIMPN3404G。
LM3402中文质料
图2. PWM调光限制 DIM1的逻辑是直接的，因此当DIM1端口为高电平时，LM3402/02HV会输出稳定的电流。当DIM1处为低电平时，禁止任何电流输出。 连接DIM到一个固定的 逻辑低电平会禁止输出，DIM引脚处于开路状态时，对LM3402/02HV进行赋能。DIM1功能仅禁止功率NFET，IC内其他电路模块仍然工作, 由此可将转换器的响 应时间降到最低。 通过连接到可选NFET Q1的栅极，DIM2为PWM调光提供了第二种方法。 注意到在标准元件清单上没有列出Q1，所以必须为执行DIM2的功能添加Q1。Q1提 供LED电流的分流路径。这种小型NFET的开启和关闭比LM3402/02HV启闭内置的NFET更加迅速, 从而为更高频率和/或更高精度的PWM 调光信号提供更快的响应时间。该方法所取的折衷就是, 当LED关闭时会有满幅电流通过Q1，会导致较低的效率。 DIM2的逻辑是反相的，因此当DIM2为低电平时，LM3402/02HV会输出稳定的电流。当DIM2处为高电平时，则禁止电流输出。将DIM2连接一个固定逻辑高电 平则关闭LED，但不会关闭LM3402/02HV。 低功率关机 将OFF端口接地，从而将LM3402/02HV置于一个低功率关机状态（典型值为90 μA）。在正常工作期间，该端口应始终保持在开路状态。 输出开路 将DIM端口悬浮或者接至逻辑高电平，一旦输入达到6V，LM3402/02HV就开始运作。在输入供电但输出未连接任何LED阵列的情况下，输出电压将会上升到和 输入电压相等。电路的额定输出为50V（LM3402）或100V（LM3402HV），此时器件不会受到损坏。然而在稳定状态下，输出电压高于LED阵列的预期前馈电 压时，则应当小心,不要连接任何LED阵列。还有一种方法就是，在位置Z1和RZ处放置齐纳二极管和齐纳限流电阻。在输出Z1处的一个意外开路将会使电路进 入反向偏置，并迫使CS引脚电压上拉至等于输出电压。一个内置的比较器监测CS引脚电压，在该情况下会禁止内置的NFET工作。结果是电路进入一个低功率 打嗝模式, 用以防止输出端的过压以及电感、内置NFET和输入电压源上的热应力。
TE泰科RTD34012继电器规格书
n 1 pole 12A/16A, 1 form C (CO) or 1 form A (NO) contact n DC or AC coiln 5kV/10mm coil-contact, reinforced insulation n Ambient temperature 85°C (DC coil)n WG version: product in accordance to IEC 60335-1n Reflow version: for THR (Through-Hole Reflow) soldering processTypical applicationsBoiler control, timers, garage door control, POS automation, interface modulesApprov a lsVDE Cert. No. 40007571, cULus E214025, cCSAus 1142018; CQC in preparationTechnical data of approved types on requestContact Data 12A 16AContact arrangement 1 form C (CO) or 1 form A (NO) Rated voltage 250VAC Max. switching voltage 400VAC Rated current 12A 16A Limiting continuous current 12A 16A, UL: 20A Limiting making currentmax. 4s, duty factor 10% 25A 30A Breaking capacity max. 3000VA 4000VA Contact material A gNi 90/10, AgNi 90/10 gold plated Frequency of operation, with/without load DC coil 360/72000h -1 AC coil 360/36000h -1Operate/release time max., DC coil 8/6ms Bounce time max., DC coil, form A/form B 4/6ms Electrical endurance see electrical endurance graph 1)Contact ratings Type Contact Load Cycles IEC 61810RT314 DC-coil A (NO) 16A, 250VAC, cos φ=1, 85°C 30x103 RT314 DC-coil C (CO) 16A, 250VAC, cos φ=1, 85°C 10x103 RT314 DC-coil A (NO) 10A, 400VAC, cos φ=1, 85°C 150x103 RT114 DC-coil A (NO) 12A, 250VAC, cos φ=1, 85°C 50x103 RT114 AC-coil A (NO) 12A, 250VAC, cos φ=1, 70°C 100x103UL 508 RT314 A/B (NO/NC) 20A, 250VAC, general purpose, 85°C 6x103 RT334 A (NO) 16A, 250VAC, gen. purpose, 85°C 50x103 RT314 A (NO) 1hp, 240VAC, 40°C 1x103 RT314 A (NO) FLA/LRA, 4.5/13.1A, 480VAC, 70°C 100x 103EN60947-5-1RT314 DC-coil A/B (NO/NC) 2A, 24VDC, DC13 6.050EN60730-1RT314 DC-coil A (NO) 12(2)A, 250VAC, 85°C 100x103reflow soldering process.Contact Data (continued)Mechanical endurance DC coil >30x106 operations AC coil>10x106 operations AC coil, reflow version>5x106 operationsCoil DataCoil voltage range, DC coil/ AC coil 5 to 110VDC / 24 to 230VAC Operative range, IEC 61810 2Coil insulation system according UL class FCoil versions, DC coil Coil Rated Operate Release Coil Rated coil code voltage voltage voltage resistance powerVDC VDC VDC Ω±10%2) mW005 5 3.5 0.5 62 403 006 6 4.2 0.6 90 400 009 9 6.3 0.9 200 400 012 12 8.4 1.2 360 400 020 20 14.0 2.0 952 420 024 24 16.8 2.4 1440 400 048 48 33.6 4.8 5520 417 060 60 42.0 6.0 85702) 420 110 110 77.0 11.0 288002) 4202) Coil resistance ±12%.All figures are given for coil without pre-energization, at ambient temperature +23°C.Other coil voltages on request.Coil versions, AC coil 50/60 Hz Coil Rated Operate Release Coil Rated coil code voltage voltage voltage resistance power VAC VAC VAC Ω±15%3) VA 524 24 18.0 3.6 3503) 0.76 615 115 86.3 17.3 8100 0.76 620 120 90.0 18.0 8800 0.75 700 200 150.0 30.0 24350 0.76 730 230 172.5 34.5 32500 0.743) Coil resistance ±10%.All figures are given for coil without pre-energization, at ambient temperature +23°C, 50 Hz.Power PCB Relay RT1F0144-CZ bOther Data (continued)Terminal typestandard version PCB-THT, plug-in reflow version PCB-THR Mounting distance AC coil: ≥2.5mm Weight 14g Resistance to soldering heat THT, IEC 60068-2-20 RTII 270°C/10s RTIII 260°C/5s Resistance to soldering heat THRreflow soldering (for reflow version) forced gas convection 4) or vapour phase 5) temperature profile according EN61730Packaging/unit tube/20 pcs., box/500 pcs.4) infrared heating not allowed 5) recommended fluid LS/230AccessoriesFor details see datasheet A ccessories Industrial Power Relay RT NOTE: indicated contact ratings and electrical endurance data for direct wiring of relays (according IEC 61810-1); for relays mounted on sockets deratings may apply.Insulation DataInitial dielectric strength between open contacts 1000V rms between contact and coil 5000V rms Clearance/creepagebetween contact and coil ≥10/10mmMaterial group of insulation parts IIIa Tracking index of relay base PTI 250V reflow versionPTI 175VOther DataMaterial compliance: EU RoHS/ELV , China RoHS, REACH, Halogen content refer to the Product Compliance Support Center at /customersupport/rohssupportcenter Resistance to heat and fireWG version or Reflow version according EN60335, par30Ambient temperatureDC coil -40 to 85°C AC coil -40 to 70°C Category of environmental protection, IEC 61810 standard version R TII - flux proof, RTIII - wash tight reflow version RTII - flux proof Vibration resistance (functional)form A/form B contact, 30 to 500Hz 20g/5g Shock resistance (destructive)100gPCB layout / terminal assignmentBottom view on solder pins12 A , pinning 3.5 mm12 A , pinning 5 mm16 A , pinning 5 mmS0163-BES0163-BC S0163-BG S0163-BH S0163-BD S0163-BF*) With the recommended PCB hole sizes a grid pattern from 2.5 m m to 2.54 m m can be used.Product code structureTypical product codeRT 3 1 4 024Type RT Power PCB Relay RT1Version 1 12A, pinning 3.5mm, flux proof 2 12A, pinning 5mm, flux proof *) 3 16A, pinning 5mm, flux proof B 12A, pinning 3.5mm, wash tight D 16A, pinning 5mm, wash tight Contact arrangement 1 1 form C (CO) contact 3 1 form A (NO) contact Contact material 4 AgNi 90/10 5 AgNi 90/10 gold plated (for type RT31.)Coil Coil code: please refer to coil versions table Version Blank Standard version WG Product in accordance with IEC 60335-1 (domestic appliances) R Reflow solderable*) Wash tight version on requestDimensionsProcess conditions for Reflow soldering according to EN61760-1THT version THR version (reflow solderable)Product codeVersionContactsContact materialCoilVersionPart numberRT114009 12A, pinning 3.5mm, 1 form C (CO) AgNi 90/10 9VDC Standard 1393239-9 RT114012 flux proof contact 12VDC 1419108-1 RT114012WG IEC60335-1 compliant 7-1415538-6 RT114024 24VDC Standard 1-1393239-3 RT114024WG IEC60335-1 compliant 1415539-4 RT114730 230VAC Standard 1-1393239-9 RT115024 AgNi 90/10 gold pl. 24VDC 2-1393239-1 RT134012 1 form A (NO) AgNi 90/10 12VDC 2-1393239-6 RT134024 contact 24VDC 3-1393239-0 RT214012 12A, pinning 5mm, 1 form C (CO) 12VDC 5-1393239-4 RT214024 flux proof contact 24VDC 5-1393239-5 RT214524 24VAC 5-1393239-9 RT214730 230VAC 1419108-6 RT314005 16A, pinning 5mm, 5VDC 9-1393239-1 RT314006 flux proof 6VDC 9-1393239-3 RT314012 12VDC 9-1393239-5 RT314012WG IEC60335-1 compliant 8-1415535-6 RT314024 24VDC Standard 9-1393239-8 RT314024WG IEC60335-1 compliant 1415538-7 RT314048 48VDC Standard 1393240-1 RT314730 230VAC 1393240-7 RT315024 AgNi 90/10 gold pl. 24VDC 1-1393240-4 RT334009WG 1 form A (NO) AgNi 90/10 9VDC IEC60335-1 compliant 3-1415538-1 RT334012 contact 12VDC Standard 4-1393240-5 RT334012WG IEC60335-1 compliant 1-1415527-1 RT334024 24VDC Standard 4-1393240-8 RT334048 48VDC 5-1393240-0 RTB14005 12A, pinning 3.5mm, 1 form C (CO) 5VDC 1-1393238-2 RTB14012 wash tight contact 12VDC 1-1393238-5 RTB14024 24VDC 1-1393238-9 RTB14524 24VAC 2-1393238-4 RTD14005 16A, pinning 5mm, 5VDC 5-1393238-9 RTD14012 wash tight 12VDC 6-1393238-2 RTD14024 24VDC 6-1393238-8 RTD14048 48VAC 6-1393238-9 RTD34012 1 form A (NO) 12VDC 3-1419108-5 RTD34024 contact 24VDC 3-1419108-8 This list represents the most common types and does not show all variants covered by this datasheet.。
LIS8512_Datasheet
版权© 莱士电子科技有限公司
莱士电子科技有限公司
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LIS-DS-8512-V1.1
A uA V V V V
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LIS-DS-8512-V1.1
LIS8512
两绕组-初级侧控制 LED 驱动开关
典型工作特性曲线
图1
由于不受辅助线圈供电限制，并且具有宽范围的工 作频率，即使系统输出在 4 颗灯至 7 颗灯的额定电 压情况下，仍能保证良好的恒流特性，为设计系列 机种提供良好基础。
输出开路，短路保护功能 过温保护功能 优化的恒流精度 优化的线电压及负载调整率 优化的电流温度系数 优化的系统成本 内置700V高压MOS SOP-8封装
概述
LIS8512 是一款专用于 LED 恒流驱动的控制芯 片，通过采用专有的初级侧 LED 恒流控制技术， 使得系统架构得到了最大程度的精简。它不但省 去了传统二次侧控制所需的光耦和 431 等反馈器 件，而且还进一步省去传统初级侧控制架构中用 于实现反馈的辅助绕组，反馈电阻以及为 IC 供电 的整流二极管等无源器件，使系统成本得到极大 程度的降低。由于采用高压直接供电，LIS8512 系统的输出电压范围得到极大的拓宽，同一驱动 系统可以驱动 4~7 颗串联 LED，方便系列机种应 用。右图示出了这种芯片的典型应用。LIS8512 还集成了完善的保护功能，包括输入电流的逐周 期过流保护，电流检测管脚的开路保护，IC 过温 保护，以及输出端的开路和短路保护等。
功能描述
启动和供电 LIS8512 是通过启动电阻从线电压直接供电。通过 图 2 可以了解到，当采用这种供电方式启动时，芯 片 VDD 的供电电容 C1 首先通过启动电阻 R1 由线电 压充电，当其上的电压达到阈值 UVLO(off)后，芯 片启动，并开始输出脉冲驱动内部功率开关，由于 IC 的耗电极小，当 R1 取值适当时，VDD 电压便可 维持在某一值上，保证 IC 正常工作，采用这种供 电方式，图 2 虚线框中变压器的辅助绕组和芯片供 电整流二极管 D1 可以去除。