APTB1615YSGC-F01;中文规格书,Datasheet资料

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17-21SYGC-S530中文资料

EVERLIGHT ELECTRONICS CO.,LTD.DATA SHEETPART NO. ：17-21SYGC/S530-E2/TR8DATE ：2005.08.17.DEPARTMENT：SZIEREVISION ：2RECEIVED■MASS PRODUCTION□ PRELIMINARY□ CUSTOMER DESIGNDEVICE NUMBER : SZ DSE-171-024PAGE :9CUSTOMER DESIGNER CHECKER APPROVERMeng Yali Auh Buck2 New data sheet approve2005.08.17REV DESCRIPTION RELEASE DATEOFFICE : NO 25,Lane 76,Chung Yang Rd,Sec.3 Tucheng, Taipei 236, Taiwan, R.O.C.TEL : 886-2-2267-2000,2266-9936 ( 22 Lines )FAX : 886-2-2267-6189Technical Data Sheet0805 Package Chip LEDs17-21SYGC/S530-XX/TR8 Features․Package in 8mm tape on 7〞diameter reel.․Compatible with automatic placement equipment.․Compatible with infrared and vapor phase reflowsolder process.․Mono-color type.․Pb-free.․The product itself will remain within RoHS complaint Version.Descriptions․The 17-21 SMD Taping is much smallerthan lead frame type components, thusenable smaller board size, higher packingdensity, reduced storage space and finallysmaller equipment to be obtained.․Besides, lightweight makes them ideal forminiature applications. etc.Applications․Automotive: backlighting in dashboard and switch.․Telecommunication: indicator and backlighting intelephone and fax.․Flat backlight for LCD, switch and symbol.․General use.Device Selection GuideChipLens Color Part No.ColorMaterial Emitted17-21SYGC/S530-XX/TR8 AlGaInP Brilliant Yellow Green Water Clear17-21SYGC/S530-XX/TR8 Package Outline DimensionsNote: The tolerances unless mentioned is ±0.1mm, Unit = mm17-21SYGC/S530-XX/TR8Absolute Maximum Ratings (Ta=25℃)Parameter SymbolRating UnitReverse Voltage V R 5 V Forward Current I F 25 mA Operating Temperature Topr -40 ~ +85 ℃ Storage TemperatureTstg-40~ +90℃Electrostatic Discharge(HBM) ESD 2000 V Power Dissipation Pd 60mWPeak Forward Current (Duty 1/10 @1KHz) I FP60 mA Soldering TemperatureTsolReflow Soldering : 260 ℃ for 10 sec. Hand Soldering : 350 ℃ for 3 sec.Electro-Optical Characteristics (Ta=25℃)Parameter Symbol*ChipRankMin. Typ. Max. Unit ConditionE1 12 17 -----E2 17 23-----E3 22 31 ----- Luminous IntensityIvE4 27 41 -----mcdViewing Angle 2θ1/2 ----- ----- 140 ----- degPeak Wavelength λp ----- ----- 575 ----- nm Dominant Wavelength λd ----- ----- 573 ----- nm Spectrum RadiationBandwidth △λ ----- ----- 20 ----- nm Forward Voltage V F ----- 1.7 2.0 2.4 V I F =20 mAReverse CurrentI R----- ----- ----- 10μAV R =5V* Chip Rank17-21SYGC/S530-XX/TR8Reel DimensionsNote: The tolerances unless mentioned is ±0.1mm, Unit = mm17-21SYGC/S530-XX/TR8 Carrier Tape Dimensions: Loaded quantity3000 PCS per reel17-21SYGC/S530-XX/TR8Reliability Test Items And ConditionsThe reliability of products shall be satisfied with items listed below. Confidence level ：90% LTPD ：10%No. Items Test Condition Test Hours/Cycles SampleSizeAc/Re1 Reflow Soldering Temp. : 260℃±5℃Min. 5sec. 6 Min.22 PCS.0/1 2 Temperature Cycle H : +100℃ 15min∫ 5 minL : -40℃ 15min 300 Cycles 22 PCS.0/13 Thermal Shock H : +100℃ 5min∫ 10 secL : -10℃ 5min300 Cycles 22 PCS.0/1 4High TemperatureStorageTemp. : 100℃ 1000 Hrs. 22 PCS.0/1 5Low TemperatureStorage Temp. : -40℃ 1000 Hrs. 22 PCS.0/1 6 DC Operating Life I F = 20 mA 1000 Hrs. 22 PCS.0/1 7High Temperature /High Humidity85℃/ 85%RH1000 Hrs.22 PCS.0/117-21SYGC/S530-XX/TR8 Precautions For Use1. Over-current-proofCustomer must apply resistors for protection, otherwise slight voltage shift will cause bigcurrent change ( Burn out will happen ).2. Storage2.1 Do not open moisture proof bag before the products are ready to use.2.2 Before opening the package: The LEDs should be kept at 30℃or less and 90%RH or less.2.3 After opening the package : The LEDs should be kept at 30℃or less and 60%RH or less(Floor life).However, it's recommended that the LEDs should be used within 168 hours (7 days) after openingthe package. If unused LEDs remain, it should be stored in moisture proof packages.2.4 If the moisture absorbent material (silica gel) has faded away or the LEDs have exceeded thestorage time, baking treatment should be performed using the following conditions.Baking treatment : 60±5℃for 24 hours.3. Soldering Condition3.1 Pb-free solder temperature profile3.2 Reflow soldering should not be done more than two times.3.3 When soldering, do not put stress on the LEDs during heating.3.4 After soldering, do not warp the circuit board.17-21SYGC/S530-XX/TR84.Soldering IronEach terminal is to go to the tip of soldering iron temperature less than 350℃ for 3 seconds within once in less than the soldering iron capacity 25W. Leave two seconds and more intervals, and do soldering of each terminal. Be careful because the damage of the product is often started at the time of the hand solder. 5.RepairingRepair should not be done after the LEDs have been soldered. When repairing isunavoidable, a double-head soldering iron should be used (as below figure). It should be confirmed beforehand whether the characteristics of the LEDs will or will not be damaged by repairing.。

WDJ1-1615RYG0552红黄绿双色规格书

3. LED light module, LED Lighting, LED light strips
LED 发光模组，LED 灯饰照明,LED 灯条 4. Status indicators: Consumer & industrial
electronics. 状态指示:消费性和工业电子产品
R
YG
深圳市沃蓝科技有限公司
Shenzhen Wal-blue Technology Co.,LTD
SPECIFICATIONS FOR SURFACE MOUNT LED
表面贴装式 LED 产品规格书
Customer
:
客户名称
Product Description :
产品描述
Model
:
型号
Issue Date
240HRS±2HRS
1000HRS (-24HRS,+72HRS)
1000HRS (-24HRS,+72H RS)
Temperature Cycling
105℃ ～ 25℃ ～ -55℃ ～ 25℃ 30mins 5mins 30mins 5mins
10 Cycles
Thermal Shock
IR-Reflow In-Board, 2 Times 85 ± 5℃ ～ -40℃ ± 5℃ 10mins 10mins
---------------
Solderability
T.sol= 235 ± 5℃ Immersion rate 25±2.5 mm/sec Coverage ≧95% of the dipped surface
Immersion time 2±0.5 sec
Reference Standard

PCS-915GA_X_说明书_国内中文_标准版_X_R1.03_(ZL_YJBH5311.1212)

ii
南京南瑞继保电气有限公司
PCS-915GA 母线保护装置
目录
前言 ............................................................................................................................................. i 目录 ........................................................................................................................................... iii 第 1 章概述 ..............................................................................................................................1 1.1 应用范围 ....................................................................................................................... 1 1.2 保护配置 ....................................................................................................................... 1 1.3 性能特征 ....................................................................................................................... 1 1.4 订货须知 ....................................................................................................................... 1 1.5 产品执行标准 ................................................................................................................ 1 第 2 章技术参数....................................................................................................................... 3 2.1 电气参数 ....................................................................................................................... 3 2.2 机械结构 ....................................................................................................................... 4 2.3 环境条件参数 ................................................................................................................ 4 2.4 通信端口 ....................................................................................................................... 4 2.5 型式试验 ....................................................................................................................... 5 2.6 认证 ..............................................................................................................................6 2.7 故障录波和事件记录 ..................................................................................................... 6 2.8 保护功能 ....................................................................................................................... 6 第 3 章工作原理....................................................................................................................... 9 3.1 概述 ..............................................................................................................................9 3.2 原理说明 ..................................................................................................................... 10 第 4 章硬件及结构安装 .......................................................................................................... 21 4.1 概述 ............................................................................................................................ 21 4.2 面板布置图.................................................................................................................. 21 4.3 结构与安装.................................................................................................................. 23 4.4 装置硬件配置及端子定义 ............................................................................................ 25 4.5 插件说明 ..................................................................................................................... 28 第 5 章定值 ............................................................................................................................ 35 5.1 设备参数定值 .............................................................................................................. 35 5.2 保护定值 ..................................................................................................................... 37 5.3 软压板 ......................................................................................................................... 38 5.4 装置设置 ..................................................................................................................... 39 5.5 描述定值 ..................................................................................................................... 42 第 6 章人机接口..................................................................................................................... 45

APT15GN120BD_SDQ1(G) 商品说明书

050-7598 R e v C 7-2009TYPICAL PERFORMANCE CURVESMAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise speciﬁ ed.STATIC ELECTRICAL CHARACTERISTICSCharacteristic / Test ConditionsCollector-Emitter Breakdown Voltage (V GE = 0V , I C = 0.5mA)Gate Threshold Voltage (V CE = V GE , I C = 600µA, T j= 25°C)Collector-Emitter On Voltage (V GE = 15V , I C = 15A, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V , I C = 15A, T j = 125°C)Collector Cut-off Current (V CE = 1200V , V GE = 0V , T j = 25°C) 2Collector Cut-off Current (V CE = 1200V , V GE = 0V , T j = 125°C) 2Gate-Emitter Leakage Current (V GE = ±20V)Intergrated Gate ResistorSymbol V (BR)CES V GE(TH)V CE(ON)I CES I GES R GINTUnitsVoltsµA nA ΩSymbol V CES V GE I C1I C2I CM SSOA P D T J ,T STGT LAPT15GN120BD_SDQ1(G)1200±3045224545A @ 1200V195-55 to 150300UNIT VoltsAmpsWatts °CParameterCollector-Emitter Voltage Gate-Emitter VoltageContinuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1Switching Safe Operating Area @ T J = 150°C T otal Power DissipationOperating and Storage Junction T emperature RangeMax. Lead T emp. for Soldering: 0.063" from Case for 10 Sec.CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.Utilizing the latest Field Stop and T rench Gate technologies, these IGBT's have ultralow V CE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefﬁ cient. Low gate charge simpliﬁ es gate drive design and minimizes losses.• 1200V Field Stop• Trench Gate: Low V CE(on) • Easy ParallelingApplications : Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMIN TYP MAX 12005.0 5.86.5 1.4 1.7 2.1 2.0200TBD 120N/AMicrosemi Website - APT15GN120BDQ1 APT15GN120SDQ1APT15GN120BDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471.4 E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery currentadding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁ gure 21, but with a Silicon Carbide diode.5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchingloss. (See Figures 21, 22.)6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)7 R G is external gate resistance, not including R Gint nor gate driver impedance. (MIC4452)Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained herein.THERMAL AND MECHANICAL CHARACTERISTICSUNIT °C/W gmMIN TYP MAX.641.185.9CharacteristicJunction to Case (IGBT)Junction to Case (DIODE)Package WeightSymbol R θJC R θJC W TDYNAMIC CHARACTERISTICSSymbol C ies C oes C res V GEP Q g Q ge Q gc SSOA t d(on)t r t d(off)t f E on1E on2E off t d(on)t r t d(off)t f E on1E on2E offTest Conditions Capacitance V GE = 0V , V CE = 25Vf = 1 MHz Gate Charge V GE = 15V V CE = 600V I C = 15AT J = 150°C, R G = 4.3Ω 7, V GE =15V , L = 100µH,V CE = 1200VInductive Switching (25°C)V CC = 800V V GE = 15V I C = 15A R G= 4.3Ω 7T J = +25°CInductive Switching (125°C)V CC = 800V V GE = 15V I C = 15A R G= 4.3Ω 7T J = +125°C Characteristic Input Capacitance Output CapacitanceReverse T ransfer Capacitance Gate-to-Emitter Plateau Voltage T otal Gate Charge 3 Gate-Emitter ChargeGate-Collector ("Miller") Charge Switching Safe Operating Area T urn-on Delay Time Current Rise Time T urn-off Delay Time Current Fall TimeT urn-on Switching Energy 4T urn-on Switching Energy (Diode) 5T urn-off Switching Energy 6 T urn-on Delay Time Current Rise Time T urn-off Delay Time Current Fall TimeT urn-on Switching Energy 4 4T urn-on Switching Energy (Diode) 55T urn-off Switching Energy 66MIN TYPMAX1200 65 50 9.0 90 5 55 4510 9 150 110 410 73095010 9 170 1854751310 1300UNITpFV nC Ans µJns µJ050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVESV CE , COLLECTER-TO-EMITTER VOLT AGE (V)V CE , COLLECTER-TO-EMITTER VOLTAGE (V)FIGURE 1, Output Characteristics(T J = 25°C) FIGURE 2, Output Characteristics (T J = 125°C) V GE , GATE-TO-EMITTER VOLTAGE (V)GATE CHARGE (nC)FIGURE 3, Transfer CharacteristicsFIGURE 4, Gate ChargeV GE , GATE-TO-EMITTER VOLTAGE (V) T J , Junction Temperature (°C)FIGURE 5, On State Voltage vs Gate-to- Emitter VoltageFIGURE 6, On State Voltage vs Junction Temperature T J , JUNCTION TEMPERATURE (°C)T C , CASE TEMPERATURE (°C)FIGURE 7, Breakdown Voltage vs. Junction TemperatureFIGURE 8, DC Collector Current vs Case TemperatureB VC E S , C O L L E C T O R -T O -E M I T T E R B R E A KD O W N V CE , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )I C , C O L L E C T O R C U R R E N T (A )V O L T A G E (N O R M A L I Z E D )I C , D C C O L L E C T O R C U R R E N T (A ) V C E , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V ) V G E , G A T E -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )1.101.051.000.950.90-50 -25 0 25 50 75 100 125-50 -25 0 25 50 75 100 125 150605040302010050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)S W I T C H I N G E N E R G Y L O S S E S (µJ ) E O N 2, T U R N O N E NE R G Y L O S S (µJ )t r , R I S E T I M E (n s )t d (O N ), T U R N -O N D E L A Y T I M E (ns )S W I T C H I N G E N E R G Y LO S S E S (µJ ) E O F F , T U R N O F F E N E R G YL O S S (µJ )t f , F A L L T I M E (n s )t d (O F F ), T U R N -O F FD E L A Y T I M E (n s )I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current I CE , COLLECTOR TO EMITTER CURRENT (A)I CE , COLLECTOR TO EMITTER CURRENT (A)FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current R G , GATE RESISTANCE (OHMS)T J , JUNCTION TEMPERATURE (°C)FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature12108642016141210864230002500200015001000500500045004000350030002500200015001000500020018016014012010080604020030025020015010050035003000250020001500100050003500300025002000150010005000050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES5045403530252015105C , C A P A C I T A N C E (PF )I C , C O L L E C T O R C U R R E N T (A )V CE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V CE , COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter VoltageFigure 18,Minimim Switching Safe Operating Area0 200 400 600 800 1000 1200 1400Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECT ANGULAR PULSE DURATION (SECONDS)Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse DurationF M A X , O P E R A T I NG F R E Q U E N C Y (kH z )I C , COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current14010050106050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)Figure 22, Turn-on Switching Waveforms and Deﬁ nitionsFigure 23, Turn-off Switching Waveforms and Deﬁ nitionsT J = 125°CCollector CurrentCollector VoltageGate VoltageSwitching Energy5%10%t d(on)90%10%t r5%T J = 125°CCollector VoltageCollector CurrentGate VoltageSwitching Energy90%t d(off)10%t f90%V050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES Characteristic / Test ConditionsMaximum Average Forward Current (T C = 127°C, Duty Cycle = 0.5)RMS Forward Current (Square wave, 50% duty)Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms)Symbol I F (AV)I F (RMS)I FSM SymbolV FCharacteristic / Test ConditionsI F = 15A Forward Voltage I F = 30AI F = 15A, T J = 125°CSTATIC ELECTRICAL CHARACTERISTICSUNITAmpsUNITVolts MINTYPMAX2.82.42.45A PT15GN120BD_SDQ1(G)1529110DYNAMIC CHARACTERISTICSMAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise speciﬁ ed.ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODEMINTYPMAX-21 -240 -260- 3 - -290 -960- 6 - -130- 1340 -19UNITns nC Amps ns nC Amps ns nC AmpsCharacteristicReverse Recovery Time Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery CurrentSymbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRMTest ConditionsI F = 15A, di F /dt = -200A/µs V R = 800V , T C = 25°CI F = 15A, di F /dt = -200A/µs V R = 800V , T C = 125°CI F = 15A, di F /dt = -1000A/µs V R = 800V , T C = 125°CI F = 1A, di F /dt = -100A/µs, V R = 30V , T J = 25°C Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (seconds)FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)1 10 100 2008070605040302010C J , J U N C T I O N C A P A C I T A N C E K f ,D Y N A M I C P A R A ME T E R S(p F )(N o r m a l i z e d t o 1000A /µs )I F (A V ) (A )T J , JUNCTION TEMPERATURE (°C)Case Temperature (°C)Figure 29. Dynamic Parameters vs. Junction TemperatureFigure 30. Maximum Average Forward Current vs. CaseTemperatureV R , REVERSE VOLTAGE (V)Figure 31. Junction Capacitance vs. Reverse VoltageQ r r , R E V E R S E R E C O V E R Y C H A R G E I F , F O R W A R D C U R R E N T (n C )(A )I R R M , R E V E R S E R E C O V E R Y C U R R E N T t r r , R E V E R S E R E C O V E R Y T I M E (A )(n s )V F , ANODE-TO-CATHODE VOLT AGE (V)-di F /dt, CURRENT RATE OF CHANGE(A/µs)Figure 25. Forward Current vs. Forward VoltageFigure 26. Reverse Recovery Time vs. Current Rate of Change-di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES51234di F /dt - Rate of Diode Current Change Through Zero Crossing.I F - Forward Conduction CurrentI RRM - Maximum Reverse Recovery Current.t rr - Reverse R ecovery Time, measured from zero crossing where Q rr - Area Under the Curve Defined by I RRM and t rr .line through I RRM and 0.25 I RRM passes through zero.Figure 32. Diode Test CircuitFigure 33, Diode Reverse Recovery Waveform and Definitions30 D.U.T.+18V 0VV rTO -247 P ackage OutlineDimensions in Millimeters and (Inches){3 Plcs}Dimensions in Millimeters (Inches)and Leads are PlatedD 3PAK Package Outlinee1 SAC: Tin, Silver, Coppere3 SAC: Tin, Silver, Copper(Cathode)(Anode)t h o d e )Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,5834,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.(Cathode)(Anode)。

IRGP4086PBF;中文规格书,Datasheet资料

TJ = 25°C
tf
Fall time
td(on)
Turn-On delay time
tr
Rise time
— 65 —
— 30 —
IC = 25A, VCC = 196V
— 33 — ns RG = 10Ω, L=200μH, LS= 200nH
td(off) tf tst
EPULSE
Turn-Off delay time Fall time Shoot Through Blocking Time
2
/

240
VGE = 18V
200
VGE = 15V
VGE = 12V
160
VGE = 10V VGE = 8.0V
120
VGE = 6.0V
ICE (A)
80
40
0
0
4
8
12
16
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
––– 29 ––– ––– 65 ––– ––– 22 ––– — 36 — — 31 — — 112 —
S VCE = 25V, ICE = 25A nC VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight

NCP1015AP100G;NCP1015AP065G;NCP1015ST100T3G;NCP1015ST65T3G;中文规格书,Datasheet资料

1
8
2
7
3
4
5
GND Figure 1. Typical Application Example
PIN FUNCTION DESCRIPTION
Pin No.
SOT−223
PDIP−7
Pin Name
1
1
VCC
−
2
NC
−
3
GND
2
4
FB
3
5
DRAIN
−
−
−
−
7
GND
4
8
GND
Function Powers the Internal Circuitry

MARKING DIAGRAMS
8 1
PDIP−7 CASE 626A AP SUFFIX
P1015APyy AWL
YYWWG
1
4
4
SOT−223
CASE 318E
1
ST SUFFIX
AYW 1015y G
G
1
yy y A WL YY WW G or G
= 06 (65 kHz), 10 (100 kHz) = A (65 kHz), B (100 kHz) = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package
1
Publication Order Number:
NCP1015/D
NCP1015
Indicative Maximum Output Power from NCP1015
RDS(on) − Ip
230 Vac

ASTM B115-00电解阴极铜

substantially free of all foreign material;for example,coppersulfate,dirt,grease,and oil.9.Sampling9.1For routine sampling of cathodes for analysis,themethod of sampling shall be at the discretion of the sampler.9.2In case of dispute concerning sampling for chemicalcomposition,or electrical resistivity,or both,the method ofsampling shall be in accordance with Annex A1.9.3In case of special requirements speciﬁed in the purchaseorder or contract,the method of sampling shall be as agreedbetween the supplier and the purchaser.10.Number of Tests and Retests10.1Tests :10.1.1Chemical composition shall be determined as the perelement mean of at least two replicate analyses of each sample.10.1.2Electrical resistivity shall be determined as the meanof results from four specimens.10.2Retests :10.2.1In the case of compositional or resistivity dispute,retests may be made under the conditions of 9.2.10.3Umpire Test :10.3.1In the case in which retest does not settle the dispute,further retest may be made by a qualiﬁed third-party laboratoryagreeable to both parties.This provision does not precludeother contractual agreements.11.Specimen Preparation11.1For routine testing,specimen preparation shall be at thediscretion of the preparer.11.2In the case of special requirements speciﬁed in thepurchaser order or contract,specimen preparation shall be asagreed between the supplier and the purchaser.11.3In the case of dispute concerning specimen preparationfor chemical composition speciﬁed in Table 1or electricalresistivity,specimen preparation shall be in accordance withAnnex A1.12.Test Methods12.1Chemical Composition :12.1.1For routine analysis of Grade 1and Grade 2cathode,the methods of analysis used shall be at the discretion of the analyst.12.1.2In the case of dispute concerning the chemical composition,the methods of analysis shall be in accordance with Annex A2,except for copper in Grade 2cathode.12.1.3In the case of dispute concerning copper content of Grade 2cathode,the method of analysis shall be in accordance with Methods E 53.12.1.4In the case of dispute concerning special require-ments stated in the purchase order or contract,the methods of analysis used shall be as agreed between the supplier and the purchaser.12.2Electrical Resistivity :12.2.1In the case of dispute concerning electrical resistiv-ity,the method of testing shall be in accordance with Test Method B 193.13.Signiﬁcance of Numerical Limits 13.1Calculated values shall be rounded to the desired number of places as directed in Practice E 29.14.Inspection 14.1The producer shall inspect the product and conduct such tests as are necessary to verify that the requirements of this speciﬁcation are met.15.Rejection and Rehearing 15.1Rejection :15.1.1Product that fails to conform to the requirements of this speciﬁcation may be rejected.15.1.2Rejection shall be reported to the producer or sup-plier promptly and in writing.15.1.3In the case of disagreement or dissatisfaction with the results of the test upon which rejection was based,the producer or supplier may make claim for a rehearing.15.2Rehearing :15.2.1As a result of product rejection,the supplier may make claim for retest to be conducted by the producer or supplier and the purchaser.Samples of the rejected product shall be taken in accordance with this speciﬁcation and tested by both parties as directed in this speciﬁcation,or,alterna-tively,upon agreement between both parties,an independent laboratory may be selected for the tests using the test methods prescribed in this speciﬁcation.16.Packaging and Package Marking 16.1Packaging :16.1.1Cathodes,whether full size or cut,shall be assembled in bundles or containers of suitable weight for handling and shall be prepared for shipment in such a manner as to ensure acceptance by common carrier for transportation and to afford protection from normal hazards of transportation.16.2Package Marking :16.2.1Each cathode bundle or container shall be marked to identify source and grade.16.2.2When used,metallic identifying markers shall be ﬁrmly attached only to the strapping or shipping container.TABLE 1Chemical CompositionElement Grade 1A Grade 2APercent,%Copper 99.95,min Bppm CSelenium,max 210Tellurium,max 25Bismuth,max 1.03Group total,max 3...Antimony,max 415Lead,max 540Arsenic,max 515Iron,max 1025Nickel,max 1020Tin,max 510Sulfur,max 1525Silver,max 2570Maximum allowable total 65...A Measurement error is not incorporated in the maximum limits,refer to 10.1.1.B Including silver.C Determined from a meltedsample.17.Keywords17.1cathode;copper;electrolytic copper;electroreﬁnedcopper;electrowon copperANNEXES(Mandatory Information)A1.SAMPLING AND SPECIMEN PREPARATION OF ELECTROLYTIC CATHODE COPPER FOR DETERMINATION OF COMPLIANCE WITH SPECIFICATION REQUIREMENTSA1.1ScopeA1.1.1This practice establishes a procedure for the sam-pling and specimen preparation of electrolytic copper cathodes, Grades1and2,for the determination of conformance with speciﬁcation requirements.A1.1.2UnitsThe values stated in inch-pound units are the standard.The values given in parentheses are mathematical conversions to SI units,which are provided for information only,and are not considered the standard.A1.1.3This standard does not purport to address the safety concerns,if any,associated with its use.It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.A1.2TerminologyA1.2.1Deﬁnitions of Terms Speciﬁc to This Standard:A1.2.1.1lot—One shipment,or part of one shipment,pro-duced by one reﬁner.For use other than continuous cast rod production,shipments greater than200tons short shall be subdivided into lots not exceeding200tons each for sampling purposes.A1.2.1.2gross sample—The total number of test pieces selected from a lot and considered representative of the lot. A1.2.1.3test piece—An individual cathode,or cathode part, randomly selected from the lot.A1.2.1.4sample—A portion prepared from the gross sample and considered representative of the gross sample.A1.2.1.5specimen—Representative fraction taken from the sample for test.A1.3Selection of CathodeA1.3.1Nodules shall not be considered a sample represen-tative of the lot.A1.3.2Cathodes for Continuous Rod Casting:A1.3.2.1The cathodes shall be available in the original packing for examination.A1.3.2.2The quantity of cathodes required shall be that necessary toﬂush the system plus1h of melting furnace operation.A1.3.2.3All cathode bundles shall be numbered and a random number generator shall be used to determine which bundles shall be selected for the gross sample.A1.3.2.4Should there be an insufficient quantity of cath-odes to comply with A1.3.2.2,then the procedure described in A1.3.3shall apply.A1.3.3Cathodes for Other Uses:A1.3.3.1Not less than25%of the original lot weight or25 tons,whichever is the larger,shall be available in the original packing for examination.A1.3.3.2A gross sample of24cathodes,or the equivalent in sheared cathode pieces,shall be selected from a lot.To guarantee random selection,all cathodes,or sheared cathode pieces,of the lot shall be individually numbered,and a random number generator shall be used to select the individual test pieces.A1.3.3.3In the case of sheared cathodes,24full cathodes; 48half-plate cathodes,24each of tops and bottoms;96 quarter-plate cathodes,and24each of the four quarters,shall be selected.A1.3.3.4The selection of test pieces of cathode sheared smaller than quarter plate shall be by agreement between the producer,or the supplier,and the purchaser.A1.3.3.5Alternatively,to avoid individual numbering of cathodes,or sheared cathode pieces,in the case of large lots, provided both parties agree,individual bundles,or containers, may be selected on a random basis,and then individual cathodes,or sheared cathode pieces,within each bundle,or container,shall be numbered and test pieces selected,using a random number generator as just described.A1.4Sample PreparationA1.4.1Cathode for Continuous Rod Casting:A1.4.1.1The portion used forﬂushing the system shall not be used for sampling.A1.4.1.2The remaining gross sample,minimum of one hour’s cast,shall be charged to the melting furnace.The rod coils produced from the caster shall be sequentially numbered, excluding any coils with obvious defects normally attributed to the rod casting process.A1.4.1.3Chemical Composition—Each party shall select2 coils from which a segment of rod approximately16in.(406 mm)in length shall be cut at the trailing ends of the coils.Each rod segment shall be cut into4portions of approximate equal lengths.The16portions shall be divided into4groups;each group shall contain one portion from each of the4original rod segments.The4groups of rod portions shall be placed in separate noncontaminating containers,then sealed and identi-ﬁed for the supplier,the purchaser,contingency,and umpire ifnecessary.A1.4.1.4Electrical Resistivity —Each party shall select 2coils from which a rod segment of sufficient length for testshall be taken from the trailing ends of the coils.Each rodsegment shall be cold drawn into a wire about 0.080in.diameter (2.0mm)and at least 160in.in length (4m).Eachwire coil shall be cut into 4portions of approximately equallength,and the 16portions shall be individually identiﬁed.The16wires shall be divided into 4groups of 4wires each,onefrom each of the 4original rod segments;one group each forthe producer,the purchaser,and the umpire,if necessary.A1.4.2Cathodes for Other Uses :A1.4.2.1Chemical Composition :(a )From each cathode,or sheared cathode piece,of the grosssample a vertical strip shall be cut in such a position (see Fig.A1.1)that the collection of the strips so cut represents all points of the cathode,or sheared cathode piece,including the loops (hangers)for full cathode.All vertical sections shall be approximately the same width and cut sequentially from left to right in the same order as that in which the cathodes were selected.(b )The strips selected shall be immersed in 10%volume/volume (v/v)hydrochloric acid at approximately 20°C for 15min and then removed and washed in distilled or deionized water until all visible extraneous contamination has been removed.(c )Where excessive copper sulfate surface contamination is evident,the parties shall confer to determine the extent ofwashing.N OTE 1—Repeat for second set of twelve cathodes.FIG.A1.1Vertical Strip Sampling Pattern (Refer to A1.4.2.1(a )oftext)(d )An electric induction or resistance furnace equippedwith a graphite,or other noncontaminating crucible and aclose-ﬁtting lid of the same material with provision for an inertatmosphere within the crucible shall be used for melting theselected strips.(e )The crucible shall ﬁrst be cleaned by melting in it aquantity of copper from the lot in question.The melt shall bediscarded.(f )The prepared cathode strips shall be melted in thecleaned crucible under an inert atmosphere.The molten metalshall be thoroughly stirred with a clean graphite or othernoncontaminating rod.(g )Where the available crucible is not large enough to meltthe composite sample,the 24strips shall be grouped into 2ormore batches of approximately equal weight for melting.Insuch cases,the metal from each melt shall be separatelysampled.(h )The metal shall be sampled by one of the followingmethods:(1)Ingots:Equal portions of the molten metal shall be castinto graphite ingot moulds at the beginning,middle,and end ofthe casting operation.The moulds shall provide ingots that areat least 3⁄4by 3⁄4in.(20by 20mm)in cross section and 4to 8in.(100to 200mm)in length.A sufficient number of ingotsshall be cast to provide in excess of 28oz (800g)of smallchips when drilled,milled,or sawn,using carbide-tipped tools.The surplus metal not cast into ingots may be discharged byany convenient means.(2)Shot:Remove a portion of the molten metal using a ladlecoated with a noncontaminating mould wash.The moltenmetal shall be poured into a container of deionized or distilledwater until shot in excess of 28oz (800g)has been produced.The depth of the water shall be such that the metal will notadhere to the container.Before sampling,the ladle shall be brought to the molten metal temperature,and the pouring rate shall be such that no metal will solidify in the ladle.The surplus metal may be discharged by any convenient means.(3)Pin Samples —Take in excess of 28oz (800g)from the molten metal by using either commercially available evacuated glass tubes of several millimetres in diameter and 100to 120mm in length,or the equipment shown in Fig.A1.2.The latter equipment can be made by attaching a copper tube approxi-mately 9.5-mm diameter and 400-to 500-mm length,to a spring-loaded vacuum pump.The pin may be removed by cutting away that portion of the tube that obviously had been under the molten metal surface,then splitting the tube using a small,sharp,chisel and a light hammer.N OTE A1.1—If the vacuum pump method is elected,it is recommended that the user ensure the cleanliness of the copper tube,and the level of the impurities,if any,in the tube metal be determined to avoid potential specimen contamination.(4)Divide the sample taken into 4portions of approximately 7oz (200g)each and sealed in a noncontaminating package and individually identiﬁed;one each for the producer,the purchaser,contingencies,and the umpire,if necessary.A1.4.2.2Electrical Resistivity :(a )A minimum of 4castings shall be made by pouring the molten metal from (f )in A1.4.2.1into a chill cast mould of sufficient size to produce a wire approximately 0.080in.in diameter (2.0mm)and at least 160in.(approximately 4m)in length.(b )Alternatively,the disputing parties may agree to obtain a sample by drilling selected cathodes along the diagonals to obtain a total of about 140-oz (4000-g)drillings.The drillings shall be melted as described in (d )through (f )of A1.4.2.1and chill cast as described in the preceding paragraph.(c )The cast form may be hot worked initially,providedcareFIG.A1.2Pin SamplingDeviceis taken to avoid contamination,or excessive oxidation,or both.The external oxide shall be removed and the sample cold drawn.Each wire coil shall be cut into4portions of approxi-mately equal lengths,the16portions thus obtained shall be divided into4groups of4wires each,one from each of the4 original castings;one group each for the producer,the pur-chaser,contingencies,and the umpire if necessary.A1.5Specimen PreparationA1.5.1Continuous Cast Rod:Chemical Composition—Chips,clippings,or drillings shall be taken from the rod sample using a noncontaminating tool.A1.5.2Continuous Cast Rod:Electrical Resistivity—The wire specimens shall be annealed in an inert atmosphere at approximately500°C(932°F)for30min and cooled to ambient temperature under inert atmosphere.When cool,the wires are removed and cut to test length.A1.5.3Cathodes for Others Uses:Chemical Composition: A1.5.3.1Drillings from A1.4.2.1(see Ingots:(1))shall be etched in50%(v/v)nitric acid until the reaction is clearly visible,then washed four times with distilled or deionized water,once with alcohol or acetone,and air dried.A1.5.3.2Clean the shot(see Shot:(2)),as described in A1.5.3.1.A1.5.3.3Extreme care must be exercised in the removal of all glass from samples taken with evacuated glass tubes to avoid contamination from the glass.A1.5.4Cathodes for Other Uses:Electrical Resistivity—Prepare as described in A1.5.2.A2.TEST METHODS FOR DETERMINATION OF COMPLIANCE WITH CHEMICAL COMPOSITION REQUIREMENTSFOR ELECTROLYTIC COPPER CATHODEA2.1ScopeA2.1.1These test methods establish the procedures for the chemical analysis of electrolytic copper cathode for the ele-ments with the speciﬁed limiting value stated in Table1of this speciﬁcation.A2.1.2These test methods do not purport to address all of the safety concerns,if any,associated with their use.It is the responsibility of the user of these test methods to consult and establish appropriate safety and health practices and deter-mine the applicability of regulatory limitations prior to use. Special hazard statements are given in A2.10and A2.22.A2.1.3The test methods are arranged in the following order:Sections Antimony,arsenic,bismuth,iron,lead,nickel,selenium,silver,tellurium,and tin by electro-thermal atomization atomic absorption spectrometryA2.7-A2.17Sulfur by combustion and infrared detector A2.18-A2.29A2.2Signiﬁcance and UseA2.2.1These test methods are intended to test electrolytic copper cathode for compliance with chemical composition requirements of Speciﬁcation B115.A2.3ApparatusA2.3.1Apparatus required for each determination is listed in separate sections preceding the procedure.A2.4Reagents and MaterialA2.4.1Reagents and materials required for each test method are listed in a separate section in the test method.A2.5SamplingA2.5.1Sampling shall be in accordance with speciﬁcation requirements.A2.6Rounding Calculated ValuesA2.6.1Calculated values shall be rounded to the desired number of places as directed in Practice E29.TEST METHOD A—ANTIMONY,ARSENIC,BISMUTH,IRON,LEAD,NICKEL,SELENIUM, SILVER,TELLURIUM,AND TIN BY ELECTROTHERMAL ATOMIZATION ATOMICABSORPTION SPECTROSCOPYA2.7ScopeA2.7.1This test method covers the determination of anti-mony,arsenic,bismuth,iron,lead,nickel,selenium,silver, tellurium,and tin in electrolytic cathode copper.A2.8Summary of Test Method AA2.8.1The test sample is dissolved in nitric acid and the solution diluted to a known volume.An aliquot is introduced into an electrothermal atomic absorption spectrometer with background correction capability.The absorption of the reso-nance line energy from the spectrum of the element is measured and compared with that of calibration solutions of the same element in a matched matrix.A2.9Signiﬁcance and UseA2.9.1This test method is intended to test electrolytic cathode copper for compliance with antimony,arsenic,bis-muth,iron,lead,nickel,selenium,silver,tellurium,and tin requirements of the speciﬁcation.A2.10InterferencesA2.10.1Elements normally present in electrolytic cathode copper do not interfere.A2.11HazardsA2.11.1Warning:The ultraviolet radiation must be shielded at all times to prevent eye damage.A2.11.2Arsenic trioxide(As2O3)is a hazardous reagent and may be fatal if swallowed.Inhalation and prolonged or repeated skin contact are to be avoided.A2.11.3Tellurium and tellurium compounds are hazardous reagents and may be fatal if ingested.Avoid inhalation and prolonged or repeated skincontact.A2.11.4Selenium and selenium compounds are potentially hazardous reagents.Avoid ingestion,inhalation,or prolonged and repeated skin contact.A2.11.5For other speciﬁc precautions,refer to Practice E50.A2.11.6Technical Hazards—WarningsA2.11.6.1It is essential that acids and water be carefully checked for purity to avoid contamination from this source. A2.11.6.2Laboratory glassware should be thoroughly cleaned,soaked in9%by volume HNO3for several hours,and rinsed before use.Previously etched glassware should be avoided.A2.11.6.3Effects of nonspeciﬁc absorption and light scat-tering must be compensated by matrix matching of calibration solutions and background correction.A2.11.6.4Matrix Modiﬁers—The copper matrix reduces loss for most elements during the char step.Modiﬁers such as magnesium nitrate may be found useful to stabilize further elements like nickel and tin.A2.11.6.5Should lack of homogeneity be suspect in the test material,a10-g sample,weighed to the nearest1mg should be taken and diluted to1L with the appropriate amount of acid. A2.11.6.6The lower limit of elemental determination is affected by the residual level of the element in the copper.A2.11.6.7Optimum settings for operating parameters vary instrument to instrument and must be experimentally estab-lished for a particular instrument.A2.12ApparatusA2.12.1Atomic Absorption Spectrometer and Electrother-mal Atomizer—The instrument shall be equipped with a background corrector and high speed readout electronics or a high-speed recorder,or both.The instrument should be capable of using single-element hollow cathode lamps or electrodeless discharge lamps.Follow the manufacturer’s manual for instal-lation and system operation.A2.12.2Graphite Tubes—Pyrolytically coated graphite tubes and L’vov platforms for use in the electrothermal atomizer.A2.12.3Micropipets—5to250µL.A2.12.4Operating Parameters—Determine the sample size and optimum electrothermal atomizer parameters for the type of atomizer used as recommended by the instrument manufac-turer.The analytical lines are as follows:Element Wavelength,nmAntimony217.6Arsenic193.9Bismuth223.0Iron248.3Lead283.3Nickel232.0Selenium196.0Silver328.1Tellurium214.3Tin224.6A2.13Reagents and MaterialsA2.13.1Acids—Acids,hydrochloric and nitric,should be carefully checked for purity to ensure they do not contaminate the analysis.A2.13.2Water—The quality of the water should be care-fully checked for purity to ensure it does not contaminate the analysis.A2.13.3Argon—Purity:99.98%,min.A2.13.4Copper Solution(1mL550-mg Cu)—Transfer10 g of certiﬁed high purity copper(NBS SRM393or equivalent) into a250-mL beaker.Add25-mL water and25-mL HNO3in 5-mL increments.After the last increment addition,heat gently to dissolve the copper and expel the brown fumes.Cool, transfer to a200-mL volumetricﬂask,dilute to volume with 50%by volume HNO3and mix.A2.13.4.1Known impurities in the copper metal must be considered when determining speciﬁc element ppm concentra-tion in Table A2.1and Table A2.2.A2.13.5Antimony Standard Solution(1mL50.10-mg Sb)—Dissolve0.2740g of potassium antimony tartrate (KSbC4H4O7·1/2H2O;purity:99.9%,min)with water in a 250-mL beaker.Transfer to a500-mL volumetricﬂask,dilute to volume and mix.A2.13.6Arsenic Standard Solution(1mL50.10-mg As)—Dissolve0.1320g of arsenic trioxide(As2O3;purity:99.9%, min)in a100-mL beaker with one or two pellets of potassium hydroxide(KOH)in50mL of water.Heat gently to dissolve the salt.Transfer to a500-mL volumetricﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.7Bismuth Standard Solution(1mL50.10-mg Bi)—Dissolve50mg of bismuth(Bi;purity:99.90%,min)in10mL of25%by volume HNO3.Heat gently to dissolve the metal and expel the brown fumes.Cool,transfer to a500-mL volumetricﬂask.Add50-mL HNO3,dilute to volume and mix. A2.13.8Iron Standard Solution(1mL50.10-mg Fe)—Dissolve50mg of iron(Fe;purity:99.9%,min)in10-mL HNO3.Heat gently to dissolve the iron and expel the brown fumes.Cool,transfer to a500-mL volumetricﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.9Lead Standard Solution(1mL50.10-mg Pb)—Dissolve50-mg lead(Pb;purity:99.9%,min)in10mL of 25%by volume HNO3.Heat gently to dissolve the lead and expel the brown fumes.Cool,transfer to a500-mL volumetric ﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.10Nickel Standard Solution(1mL50.10-mg Ni)—Dissolve50-mg nickel(Ni;purity:99.9%,min)in20mL of 50%by volume HNO3.Heat gently to dissolve the nickel and expel the brown fumes.Cool,transfer to a500-mL volumetric ﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.11Selenium Standard Solution(1mL50.10-mg Se)—Dissolve70.3-mg selenium dioxide(SeO2;purity;99.0%,min)in50-mL water.Transfer to a500-mL volumetric ﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.12Silver Standard Solution(1mL50.10-mg Ag)—Dissolve50-mg silver(Ag;purity:99.9%,min)in20mL ofTABLE A2.1Calibration SolutionFlask No.µLppm:As,Sb,Bi,Fe,Pb,Ni,Ag,Se,and Te150.5210 1.0325 2.5450 5.0510010.0625025.050%by volume HNO3.Heat gently to dissolve the silver and expel the brown fumes.Cool,transfer to a500-mL volumetric ﬂask.Add50-mL HNO3,dilute to volume and mix.A2.13.13Tellurium Standard Solution(1mL50.10-mg Te)—Dissolve50-mg tellurium(Te;purity:99.9%,min)in 10-mL HNO3.Heat gently to dissolve the tellurium and expel the brown fumes.Cool,transfer to a500-mL volumetricﬂask. Add50-mL HNO3,dilute to volume and mix.A2.13.14Tin Standard Solution(1mL50.10-mg Sn)—Dissolve50-mg tin(Sn;purity:99.9%,min)in75mL of33% by volume HCl.Heat gently to dissolve the tin.Cool,transfer to a500-mL volumetricﬂask,dilute to volume and mix.A2.14CalibrationA2.14.1Calibration Solutions—Using micropipets,transfer to individual100-mL volumetricﬂasks the volume of each standard solution as indicated in Table A2.1and Table A2.2: A2.14.1.1Add20mL of the copper standard solution to eachﬂask in both tables,dilute to volume and mix.Known impurities in the copper standard solution must be considered when determiningﬁnal speciﬁc element ppm concentration in both tables.A2.14.2Instrument Parameters:A2.14.2.1Set the required instrument parameters and align the electrothermal atomizer according to the manufacturer’s recommendation.A2.14.2.2Determine the optimum electrothermal atomizer parameters for the particular type atomizer and sample size as recommended by the instrument manufacturer.A2.14.3Spectrometry:A2.14.3.1Zero the instrument or set the base line on the recorder,or both.A2.14.3.2Check the zero stability and lack of spectral interference within the atomization system by running the preset heating program for blankﬁring of the electrothermal atomizer.Repeat to ensure baseline stability.A2.14.3.3Inject and atomize the calibration solutions in the order of increasing concentrations.Inject each solution three times and record the readings.Should good replication not be achieved,repeat the process.A2.14.3.4Check for memory effects by running the blank ﬁring program and reset the zero,or baseline,if necessary.A2.14.3.5Plot the average reading from each calibration versus concentration of the analyte in the calibration solution. A2.14.3.6For systems with direct instrument calibration, ensure that a sufficient number of each calibration solutions is injected and atomized to determine that proper calibration is achieved.A2.15ProcedureA2.15.1Dissolve a1-g sample,weighed to the nearest1 mg,in a100-mL beaker with20mL of50%by volume HNO3. Heat gently to dissolve the copper and expel the brown fumes. Transfer to a100-mL volumetricﬂask.Cool,dilute to volume, and mix.A2.15.2Ensure that the test solution is within1°C of the calibration solutions.Inject and atomize the test solution for three readings and record the observations.A2.16CalculationsA2.16.1Calculate the concentration of each element to be determined using the analytical curves prepared in A2.14.3.5. A2.16.2Systems with direct reading capability will provide results in the calibration concentration units.A2.17Precision and BiasA2.17.1Precision—It is not possible to specify the preci-sion of this test method but it is dependent upon the care given to sample preparation of the calibration solutions as well as the purity of the reagents.A2.17.2Bias—No information can be presented on the bias of this test method but it is dependent on the care given to the preparation of the calibration solutions as well as the purity of the reagents.TEST METHOD B—SULFUR BY COMBUSTION ANDINFRARED DETECTORA2.18ScopeA2.18.1This test method covers the determination of sulfur in electrolytic cathode copper.A2.19Summary of Test Method BA2.19.1The sulfur is converted to sulfur dioxide(SO2)by combustion in a stream of oxygen and the SO2is measured by infrared absorption.A2.19.2This test method is written for use with commercial analyzers equipped to carry out the operations automatically. A2.20InterferencesA2.20.1The elements ordinarily present do not interfere.A2.21ApparatusA2.21.1Combustion and Analyzing Instrumentation,ca-pable of making the required measurements.A2.22Reagents and MaterialA2.22.1Reagents:A2.22.1.1Accelerator—Use the accelerator recommended by the instrument manufacturer which,for copper,should be sulfur and tin free.A2.22.1.2Oxygen,ultra high purity(purity:99.95%min): Other grades of oxygen may be used if sulfur free,or the oxygen may be puriﬁed as described in Practice E50.A2.22.2Materials:A2.22.2.1Crucibles—Use crucibles recommended by the manufacturer,or equivalent.TABLE A2.2Calibration SolutionFlask No.µL ppm:As,Sb,Bi,Fe,Pb,Ni, Se,Sn,and Te750.5 810 1.0 925 2.5 1050 5.0 1110010.0 1225025.0。

XN0150100L资料

0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
4: Emitter 5: Base (Tr1) Mini5-G1 Package
Marking Symbol: 5R Internal Connection
3 4 5
1.1+0.3 –0.1
Tr1
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
600 VCE = 10 V
300
fT I E
VCB = 10 V Ta = 25°C 240
NV IC
VCE = 10 V GV = 80 dB 200 Function = FLAT Ta = 25°C
Large)
Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = −2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
XN01501
PT Ta
500
60
IC VCE
240
Ta = 25°C IB = 160 µA
IC I B
VCE = 10 V Ta = 25°C 200

APTB1615ESGC-F01,APTB1615ESGC-F01,APTB1615ESGC-F01, 规格书,Datasheet 资料

Recommended Soldering Pattern (Units : mm; Tolerance: ± 0.1)
Reel Dimension
Tape Dimensions (Units : mm)
SPEC NO: DSAF1101 APPROVED: WYNEC
REV NO: V.4 CHECKED: Allen Liu
REV NO: V.4 CHECKED: Allen Liu
DATE: APR/19/2011 DRAWN: J.Yu
PAGE: 6 OF 6 ERP: 1203002079
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SPEC NO: DSAF1101 APPROVED: WYNEC
REV NO: V.4 CHECKED: Allen Liu
DATE: APR/19/2011 DRAWN: J.Yu
PAGE: 1 OF 6 ERP: 1203002079
芯天下--/
Selection Guide
1.6x1.5mm BI-COLOR SMD CHIP LED LAMP
Part Number: APTB1615ESGC-F01 High Efficiency Red Super Bright Green
Features
1.6mmx1.5mm SMT LED, 0.7mm thickness. Low power consumption. Wide viewing angle. Ideal for backlight and indicator. Various colors and lens types available. Package : 2000pcs / reel. Moisture sensitivity level : level 3. RoHS compliant.

PPA0155中文资料

532PDA Pigtailed Photodiode SpecificationsAbsolute Maximum RatingsAbsolute maximum limits mean that no catastrophic damage will occur if the product is subjected to these ratings for short periods, provided that each limiting parameter is in isolation and all other parameters have values within the performance specification. It should not be assumed that limiting values of more than one parameter can be applied to the product at the same time.Parameter Symbol Minimum Maximum Units Reverse Voltage Vr-20V Reverse Current Ir-1mA Forward Voltage Vf-1V Forward Current If-5mA Power Dissipation--50mW Operating Temperature Tc–40+85°C Storage Temperature Ts–40+85°C Soldering – 10 seconds--+260°C Fiber Pull--10NPerformance SpecificationsTest Conditions:Unless Otherwise Stated PDA2446 Parameter Symbol Vr = 5 V, Tc = +25°C Min.Max.Units Dark Current Id-1nATc= +85°C-50nA Reverse Breakdown Voltage Vbr Ir = 10 µA35-V Capacitance C 1 MHz- 1.7pF Responsivity Rλ = 1300 nm0.7-A/W Operating Wavelengthλ80% points12001650nM Small Signal Bandwidth Bw 1.5-GHz Linearity X1Second Order-Vr = 15 V-70dBcfl = 135 MHzf2 = 190 MHz70% Modulation0 dBm Optical PowerThird Order-As above-85dBcFiber Pigtail: Tight jacketed, self-mode stripping, singlemode fiberParameter Minimum Maximum Units Length 1.0-mCore Diameter810µmCladding Diameter122128µmConcentricity Error-8%Secondary Jacket Diameter0.8 1.0mm533PDA Mechanical Outline OptionsALL DIMENSIONS IN MILLIMETERSPDA2446-DALL DIMENSIONS IN MILLIMETERS PDA2446 Electrical Pin-OutsPIN 1: CATHODE +VEPIN 2: CASEPIN 3: ANODE –VE534Ordering InformationPDA2446-XI-XXConnector Type:AP = Angle Polished FC/PCAS = Angle Polished SC/PCUS = Ultra Polished SC/PCSF = Super Polished FC/PCFlange Type:B = BarrelD = 2 hole PCB mount, 12.7 mm between centersAdditional options are available to meet your specific needs. Please contact your local representative for details.535536537Performance Specifications Absolute Limiting RatingsAbsolute (limiting) ratings mean that no catastrophic damage will occur if the product is subjected to these ratings for short periods, provided that each limiting parameter is in isolation and all other parameters have values within the performance specification. It should not be assumed that limiting values of more than one parameter can be applied to the product at the same time.ParameterSymbol MinimumMaximumUnits Supply VoltageV DD - 5.5V Photodiode Voltage (Negative)V pin -–7V Power Dissipation--350mW Operating Temperature Tc –40+85°C Storage Temperature Ts –40+85°C Soldering – 10 seconds --+260°C Fiber Pull --10NPerformance Specifications [1]Parameter Minimum MaximumUnits Responsivity 0.75-A/W Sensitivity [2]52 Mb/s –39-dBm 155 Mb/s –36Overload [2,3]–7-dBm Bandwidth 52 Mb/s 35-MHz 155 Mb/s90Output Impedance 3060ohms V DD Supply Voltage 4.75 5.25V V DD Supply Current -50mAPhotodiode Supply–7–4.5VNotes:1. Measured over the operating temperature range and power supply tolerance.2. Measured at the data rate specified for 1 x 10-10 using an infinite extinction ratio laser source modulated with a 223-1PRBS pattern.3. Higher overload performance available. Contact your local Hewlett-Packard Components representative for details.Fiber Pigtail: Tight jacketed, self-mode stripping, multimodeParameter MinimumMaximumUnits Length0.4 1.2m Core Diameter 4753µm Cladding Diameter 122128µm Concentricity Error-8%Secondary Jacket Diameter0.81.0mmSchematic Diagram321. GND 2. V OUT 3. V pin 4. +V DD538Drawing DimensionsPPA0052-FC-A PPA0155-FC-AMIN.––––12.00.27M8 x 0.7513.35A B C ∅D E ∅F ∅G H DIM.MIN.2.08–––– 2.54 NOM.–∅J L M N P ∅Q ∅RDIM.ALL DIMENSIONS IN MILLIMETERSMAX.19.59.515.09.1–0.3313.55MAX.2.321.652.26.88.24.2PPA0052-SC-APPA0155-SC-AMIN.–––––12.0A B C D E FDIM.MIN.2.00.27–2.08 2.54 NOM.17.8G ∅H ∅J ∅K ∅L M DIM.ALL DIMENSIONS IN MILLIMETERSMAX.9.523.013.515.58.0–MAX.3.00.337.52.518.2PPA1052-APPA1155-AMIN.––12.0–0.27400A B C D ∅E FDIM.MIN. 2.54 NOM.––13.352.1–∅G H K L ∅M ∅NDIM.ALL DIMENSIONS IN MILLIMETERSMAX.25.019.5–9.50.331200MAX.9.52.013.552.46.25539Ordering InformationAllowable Part Numbers:PPA0052-XX -A PPA0052 - FC - A PPA0155-XX -APPA0052 - SC - A Receptacle Type:PPA1052 - A - FP FC = FC PPA1052 - A - ST SC = SCPPA1052 - A - DN PPA1052 - A - SC PPA1052-X -XX PPA1052 - D - FP PPA1155-X -XXPPA1052 - D - ST Connector Type:PPA1052 - D - DN FP = FC/PC PPA1052 - D - SC ST* = ST DN = DIN PPA0155 - FC - A SC = SCPPA0155 - SC - A PPA1155 - A - FP Flange Type:PPA1155 - A - ST A = 2 hole Panel mount, 13.4 mm between centers PPA1155 - A - DN D = 2 hole PCB mount, 12.7 mm between centersPPA1155 - A - SC PPA1155 - D - FP PPA1155 - D - ST PPA1155 - D - DN PPA1155 - D - SC*ST is a registered trademark of AT&T.PPA1052-D PPA1155-DMIN.––12.0–0.274002.54 NOM.A B C D ∅EF ∅GDIM.MIN.3.8–0.9 12.7 NOM.2.1––H J K L ∅M ∅N P DIM.ALL DIMENSIONS IN MILLIMETERSMAX.25.018.0–9.50.331200MAX.4.27.51.12.46.257.5。

2SA1615中文资料

Document No. D16119EJ1V0DS00 (1st edition)Date Published April 2002 N CP(K)Printed in JapanSILICON POWER TRANSISTORS2SA1615, 1615-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGDATA SHEETThe information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.©2002The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.FEATURES•Large current capacity:I C(DC): −10 A, I C(pulse): −15 A•High h FE and low collector saturation voltage:h FE = 200 MIN. (@V CE = −2.0 V, I C = −0.5 A)V CE(sat) ≤ −0.25 V (@I C = −4.0 A, I B = −0.05 A)QUALITY GRADES•StandardPlease refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)ParameterSymbol Ratings Unit Collector to base voltage V CBO −30V Collector to emitter voltage V CEO −20V Emitter to base voltage V EBO −10V Collector current (DC)I C(DC)−10A Collector current (pulse)I C(pulse)*−15A Base current (DC)I B(DC)−0.5A Total power dissipation P T (T a = 25°C)** 1.0W Total power dissipation P T (T c = 25°C)15W Junction temperature T j 150°C Storage temperatureT stg−55 to +150°C*PW ≤ 10 ms, duty cycle ≤ 50%**Printing board mountedData Sheet D16119EJ1V0DS2ELECTRICAL CHARACTERISTICS (Ta = 25°C)ParameterSymbol ConditionsMIN.TYP.MAX.UnitCollector cutoff current I CBO V CB = −20 V, I E = 0−1.0µA Emitter cutoff current I EBO V EB = −8.0 V, I C = 0−1.0µADC current gain h FE1*V CE = −2.0 V, I C = −0.5 A 200600DC current gainh FE2*V CE = −2.0 V, I C = −4.0 A 160Collector saturation voltage V CE(sat)*I C = −4.0 A, I B = −0.05 A −0.2−0.25V Base saturation voltage V BE(sat)*I C = −4.0 A, I B = −0.05 A −0.9−1.2V Gain bandwidth product f T V CE = −5.0 V, I E = 1.5 A 180MHz Output capacity C ob V CB = −10 V, I E = 0, f = 1.0 MHz 220pF Turn-on time t on 80ns Storage time t stg 300ns Fall timet fI C = −5.0 A, I B1 = −I B2 = 0.125 A,R L = 2.0 Ω, V CC ≅ −10 V60ns*Pulse test PW ≤ 350 µs, duty cycle ≤ 2%h FE CLASSIFICATIONMarking L K h FE2200 to 400300 to 600PACKAGE DRAWING (UNIT: mm)2SA1615 2SA1615-ZElectrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin)Data Sheet D16119EJ1V0DS3TYPICAL CHARACTERISTICS (Ta = 25 °C)T o t a l P o w e r D i s s i p a t i o n P T (W )Case Temperature T C (°C)Collector to Emitter Voltage V CE (V)Case Temperature T C (°C)I C D e r a t i n g d T (%)C o l l e c t o r C u r r e n t I C (A )Collector to Emitter Voltage V CE (V)Base to Emitter Voltage V BE (V)Collector Current I C (A)C o l l e c t o r C u r r e n t I C (A )D C C u r r e n t G a i n h F EC o l l e c t o r C u r r e n t I C (A )Single pulse–15–10–5Data Sheet D16119EJ1V0DS4Collector Current I C (A)C o l l e c t o r S a t u r a t i o n V o l t a g e V C E (s a t ) (V )B a s e S a t u r a t i o n V o l t a g e V B E (s a t ) (V )Collector Current I C (A)SWITCHING TIME (t on , t stg , t f ) TEST CIRCUIT%DVH FXUUHQW ZDYHIRUP&ROOHFWRU FXUUHQW ZDYHIRUP[MEMO]Data Sheet D16119EJ1V0DS5M8E 00. 4The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots"Special":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)"Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)"NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2)"NEC semiconductor products" means any semiconductor product developed or manufactured by or forNEC (as defined above).••••••。

BFQ591中文资料

Fig.8
Gain as a function of frequency; typical values.
2002 Feb 04
6
Philips Semiconductors
Product speciﬁcation
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
UNIT V V mA W pF GHz dB dB
2002 Feb 04
2
Philips Semiconductors
Product speciﬁcation
NPN 7 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts ≤ 90 °C; note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts ≤ 90 °C; note 1 CONDITIONS open emitter open base open collector − − − − − −65 − MIN.

APT60DQ120SG商品说明书

APT60DQ120SGDatasheet Ultrafast Soft Recovery Rectifier DiodeFinalApril 2018Contents1Revision History (1)1.1Revision A (1)2Product Overview (2)2.1Benefits (2)2.2Applications (2)3Electrical Specifications (3)3.1Absolute Maximum Ratings (3)3.2Electrical Performance (3)3.3Dynamic Characteristics (4)3.4Typical Performance Curves (4)3.5Reverse Recovery Overview (6)4Package Specification (7)4.1Package Outline Drawing (7)1Revision HistoryThe revision history describes the changes that were implemented in the document. The changes arelisted by revision, starting with the most current publication.1.1Revision ARevision A was published in April 2018. It is the first publication of this document.2Product OverviewFeaturesThe following are key features of the APT60DQ120SG device:Ultrafast recovery timesSoft recovery characteristicsLow forward voltageLow leakage currentAvalanche energy ratedRoHS compliant2.1BenefitsThe following are benefits of the APT60DQ120SG device:Higher switching frequencyLow switching lossesLow noise (EMI) switchingHigher reliability systemsIncreased system power density2.2ApplicationsThe APT60DQ120SG device is designed for the following applications: Power Factor Correction (PFC)Anti-parallel diodeSwitch-mode power supplyInverters/convertersMotor controllersFreewheeling diodeSwitch-mode power supplyInverters/convertersSnubber/clamp diode3Electrical SpecificationsThis section shows the electrical specifications for the APT60DQ120SG device.3.1Absolute Maximum RatingsThe following table shows the absolute maximum ratings for the APT60DQ120SG device.All ratings: T = 25 °C unless otherwise specified.CTable 1 • Absolute Maximum RatingsSymbol Parameter Ratings UnitV R Maximum DC reverse voltage1200VV RRM Maximum peak repetitive reverse voltage1200V RWM Maximum working peak reverse voltage1200I F(AV)Maximum average forward current (T = 103 °C, duty cycle = 0.5)C60AI F(RMS)RMS forward current87I FSM Non-repetitive forward surge current (T = 45 °C, 8.3 ms)J540E AVL Avalanche energy (1 A, 40 mH)20mJT , TJ STG Operating and storage temperature range–55 to 175°CT L Lead temperature for 10 seconds300The following table shows the thermal and mechanical characteristics of the APT60DQ120SG device.Table 2 • Thermal and Mechanical CharacteristicsSymbol Characteristic Min Typ Max UnitRθJC Junction-to-case thermal resistance0.40°C/WW T Package weight0.14oz4.0g 3.2Electrical PerformanceThe following table shows the static characteristics of the APT60DQ120SG device.Table 3 • Static CharacteristicsSymbol Characteristic Test Conditions Min Typ Max UnitV F Forward Voltage I = 60 AF 2.8 3.3VI = 120 AF 3.35I = 60 A, T = 125 °CF J 2.11I RM Maximum reverse leakage current V = 1200 VR100μAV = 1200 V, T = 125 °CR J500C J Junction capacitance V = 200 VR37pF3.3Dynamic CharacteristicsThe following table shows the dynamic characteristics of the APT60DQ120SG device.Table 4 • Dynamic CharacteristicsSymbol Characteristic Test ConditionsMin Typ Max Unit t rrReverse recovery timeI = 1 A, di /dt = –100 A/µs F F V = 30 V R T = 25 °CJ30nst rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 25 °CC 320 Q rr Reverse recovery change 630 nC I RRM Maximum reverse recovery current 5 A t rr Reverse recovery time I = 60 A, di /dt = –200 A/µs F F V = 800 V R T = 125 °CC 420 ns Q rr Reverse recovery charge 2810 nC I RRM Maximum reverse recovery current 12 A t rr Reverse recovery time I = 60 A, di /dt = –1000 A/µs F F V = 800 V R T = 125 °CC 190 ns Q rr Reverse recovery change 4415 nC I RRMMaximum reverse recovery current38A3.4Typical Performance CurvesThis section shows the typical performance curves for the APT60DQ120SG device.Figure 1 • Maximum Transient Thermal ImpedanceFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 2 • Forward Current vs. Forward Voltage Figure 3 • trr vs. Current Rate of ChangeFigure 4 • Qrr vs. Current Rate of Change Figure 5 • IRRM vs. Current Rate of ChangeFigure 6 • Dynamic Parameters vs. Junction TemperatureFigure 7 • Maximum Average Forward Current vs. Case TemperatureFigure 8 • Junction Capacitance vs. Reverse Voltage1. 2. 3. 4. 5.Figure 8 • Junction Capacitance vs. Reverse Voltage3.5Reverse Recovery OverviewThe following illustration shows the reverse recovery testing and measurement information for the APT60DQ120SG device.Figure 9 • Diode Reverse Recovery Waveform and DefinitionsI —Forward conduction current.F di /dt—Rate of diode current change through zero crossing.F I —Maximum reverse recovery current.RRM t —Reverse recovery time, measured from zero crossing where diode current goes from positive to rr negative, to the point at which the straight line through I and 0.25 × I passes through zero.RRM RRM Q —Area under the curve defined by I and t .rr RRM rr4Package SpecificationThis section outlines the package specification for the APT60DQ120SG device.4.1Package Outline DrawingThis section details the D PAK package drawing of the APT60DQ120SG device. Dimensions are in3millimeters and (inches).Figure 10 • Package Outline DrawingMicrosemi Corporate HeadquartersOne Enterprise, Aliso Viejo,CA 92656 USAWithin the USA: +1 (800) 713-4113Outside the USA: +1 (949) 380-6100Fax: +1 (949) 215-4996Email:***************************© 2018 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners.Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice.Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at .053-4250。

ADS1605IPAPT;ADS1606IPAPT;ADS1605IPAPR;ADS1605IPAPRG4;ADS1605IPAPTG4;中文规格书,Datasheet资料

DVDD IOVDD PD REFEN RESET CLK CS 2XMODE RD DRDY OTR ADS1606 Only FIFO DOUT[15:0] FIFO_LEV[2:0] AGND DGND
APPLICATIONS
D D D D D
Scientific Instruments Automated Test Equipment Data Acquisition Medical Imaging Vibration Analysis
PRODUCT PACKAGE−LEAD PACKAGE DESIGNATOR PAP PAP SPECIFIED TEMPERATURE RANGE −40°C to +85°C −40°C to +85°C PACKAGE MARKING ADS1605I ADS1606I ORDERING NUMBER ADS1605IPAPT ADS1605IPAPR ADS1606IPAPT ADS1606IPAPR TRANSPORT MEDIA, QUANTITY Tape and Reel, 250 Tape and Reel, 1000 Tape and Reel, 250 Tape and Reel, 1000
ADS1605 ADS1606
HTQFP−64 HTQFP−64
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI web site at .
ADS1605 ADS1606
SBAS274H − MARCH 2003 − REVISED MAY 2007

1615-0.55T红黄绿规格书

IFP
正向直流工作电流
IF
反向电压
VR
工作环境温度
Topr
存储环境温度
Tstg
焊接条件
Tsol
发布日期
2013-11-1
页码
3 of 9
最大额定值
120
单位
mW
120
mA
30
mA
5
V
-30°C ~ + 85°C
-40°C ~ + 90°C 回流焊 : 260°C ，10s 手动焊 : 300°C ，3s
耐久性测试
高温高湿储存
IR-Reflow In-Board, 2 Times 环境温度Ta= 65±5℃,相对湿度RH= 90～95%
高温储存环境温度Ta= 105±5℃
240 小时（+ 2小时）
MIL-STD-202F:103B JIS C 7021:B-11
1000 小时
MIL-STD-883D:1008
5
单位
mcd deg nm
V μA
测试条件
IF = 20mA IF = 20mA IF = 20mA IF = 20mA IF = 20mA IF = 20mA IF = 20mA
VR = 5V
版本
六、光电参数代表值特征曲线
产品规格书
A.1
发布日期
2013-11-1
页码
4 of 9
Relative Intensity vs. Wavelength
十一、信赖度测试：
A.1
发布日期
2013-11-1
页码
7 of 9
类别测试项目
测试环境
测试时间

1MB15-060中文资料

Fuji Discrete Package IGBTn Features• Square RBSOA• Low Saturation Voltage• Less Total Power Dissipation• Minimized Internal Stray Inductancen Applications• High Power Switching• A.C. Motor Controls• D.C. Motor Controls• Uninterruptible Power SupplynOutline Drawing012345610203040506015V8V10V12VVGE=20VCollector Current vs. Collector-Emitter VoltageTj=25°CCollectorCurrent:IC[A]Collector-Emitter Voltage : VCE[V]012345610203040506015V8V10V12VVGE=20VCollector Current vs. Collector-Emitter VoltageTj=125°CCollectorCurrent:IC[A]Collector-Emitter Voltage : VCE[V] 051015202524681012IC=30A7.5A15ACollector-Emitter Voltage vs. Gate-Emitter VoltageTj=25°CCollector-EmitterVoltage:VCE[V]Gate-Emitter Voltage : VGE[V]051015202524681012IC=30A7.5A15ACollector-Emitter Voltage vs. Gate-Emitter VoltageTj=125°CCollector-EmitterVoltage:VCE[V]Gate-Emitter Voltage : VGE[V] 0510********101001000tftrtofftonSwitching Time vs. Collector CurrentVCC=300V, RG=16Ω, VGE=±15V, Tj=25°CSwitchingTime:ton,tr,toff,tf[nsec]Collector Current : IC[A]0510********101001000tftrtofftonSwitching Time vs. Collector CurrentVCC=300V, RG=16Ω, VGE=±15V, Tj=125°CSwitchingTime:ton,tr,toff,tf[nsec]Collector Current : IC[A]0100101001000tftrtofftonSwitching Time vs. RGVCC=300V, IC=15A, VGE=±15V, Tj=25°CSwitchingTime:ton,tr,toff,tf[nsec]Gate Resistance : RG[Ω]0100101001000tftrtofftonSwitching Time vs. RGVCC=300V, IC=15A, VGE=±15V, Tj=125°CSwitchingTime:ton,tr,toff,tf[nsec]Gate Resistance : RG[Ω] 05101520253035101001000CresCoesCiesCapacitance vs. Collector-Emitter VoltageTj=25°CCapacitance:Coes,C res,C ies[pF]0102030405060708090100200300400500Collector-EmitterVoltage:VCE[V]Gate Charge : QG[nQ]510152025VC C=200V, 300V, 400VGate-EmitterVoltage:VGE[V]Dynamic Input CharacteristicsTj=25°C0510********5010015020025°C125°CReverse Recovery Time vs. Forward CurrentVR=200V, -di/dt=100A/µsecReverseRecoveryTime:trr[nsec]Forward Current : IF[A]0510********246825°C125°CReverse Recovery Current vs. Forward CurrentVR=200V, -di/dt=100A/µsecReverseRecoveryCurrent:Irr[A]Forward Current : IF[A]01002003004005006007005101520253035Reverse Biased Safe Operating Area+VGE=15V, -VGE<15V, Tj<125°C, RG>16ΩCollectorCurrent:IC[A]Collector-Emitter Voltage : VCE[V]51015202550100150200250ShortCircuitCurrent:ISC[A]tSCGate Voltage : VGE[V]20406080100ShortCircuitTime:tSC[µs]Typical Short Circuit CapabilityVCC=400V, RG=16Ω, Tj=125°CISC 0,00,51,01,52,02,53,03,54,010203040506025°CTj=125°CForward Voltage vs. Forward CurrentForwardCurrent:IF[A]Forward Voltage : VF[V]50100150200trrReverseRecoveryTime:trr[nsec]-di/dt[A/µsec]01002003004005006005101520ReverseRecoveryCurrent:Irr[A]IrrReverse Recovery Characteristics vs. -di/dtIF=15A, Tj=125°C10-410-310-210-110010-210-1100101IGBTF W DTransient Thermal ResistanceThermalResistance:Rth(j-c)[°C/W]Pulse Width : PW[sec]Switching losses(E on, E off vs. I C)Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 I C [A]Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - 。

电力金具资料

1、11、24、U型挂环型号主要尺寸(C)主要尺寸（M）主要尺寸（D）主要尺寸(H)主要尺寸（R) 破坏荷重（KN)重量(kg)U—7 20 16 16 60 22 70 0。

5U-7B 20 16 16 80 22 70 0。

6 U—10 22 18 18 70 24 100 0.6 U-10B 22 18 18 85 23 100 0.7 U—12 24 22 20 80 30 120 1。

0 U—16 26 24 22 90 32 160 1.5U—16T28 24 22 90 32 160 1。

5 U-20 30 27 24 100 36 200 2.3 U-20B 30 27 24 115 36 200 2。

4 U—25 34 30 26 110 40 250 2.8 U—30 38 36 30 130 46 300 3.7 U—50 34 42 36 150 55 500 7。

0 2、延长环（环体整锻)型号主要尺寸（C）主要尺寸（D）主要尺寸（L）破坏荷重（KN）重量（kg）PH—7.D 20 16 80 70 0。

4 PH—10.7D 22 18 100 100 0。

6 PH-12。

D 24 20 120 120 0。

9 PH—16。

D 26 22 140 160 1.5 PH-20.D 30 24 160 200 1.6 PH—25。

D 34 26 160 250 2.0 PH—30。

D 38 30 180 300 3.03、联板型号主要尺寸(B）主要尺寸（H）主要尺寸（D1）主要尺寸(D2）主要尺寸（L）破坏荷重（KN）重量(kg）L-1040 16 70 20 18 400 100 4。

5L—1240 16 70 24 18 400 120 4。

7L-1640 18 100 26 20 400 160 5。

9 热镀锌钢制件。

4、19、直角挂板（Z型)型号主要尺寸(C1）主要尺寸（C2）主要尺寸（M) 主要尺寸(H）破坏荷重(kN）重量(kg）Z-7 18 18 16 60 70 0。

REF615中文安装手册

插件单元的拆卸..........................................11 插件单元的安装..........................................12 整机的安装.................................................13 嵌入式安装..............................................13 半嵌入式安装............................................17 半嵌入式倾斜安装........................................19 机架安装................................................21 屏面安装................................................23 采用机架安装方式将继电器安装在 19” 机架上..............26 采用机架安装方式将继电器安装到 combiflex 19" 机架上.....28 安装用于弧光保护系统的透镜式光感应器....................30
本文件已经过 ABB 仔细检查，但是不能完全排除偏差。如果发现其中有误，请通知制造商。除非有明确的合同承诺，在任何情况下 ABB 都不会承担因使用本手册和应用设备所导致的任何损失或损坏。
符合性
本产品符合关于“统一各成员国有关电磁兼容性（EMC 理事会指令 2004/108/ EC）和在规定电压等级范围内使用电气设备”（低压指令 2006/95/ EC）欧共体理事会的法律指令。此符合性是 ABB 在遵循该指令的条款 10 下得到的测试结果，满足 EMC 指令中的产品标准 EN 50263 和 EN 60255-26 以及低压指令中的产品标准 EN 60255-6 和 EN 60255-27。继电器的设计符合 IEC 60255 系列国际标准。