IGBT特征化建模
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– Wide and low doped N- base region => large blocking voltage,
– P+ emitter : holes injection under high level injection => Conductivity modulation,
– High forward conduction current density,
• 3 models based on 2 basic approaches :
– Average IGBT, – Dynamic IGBT (basic and advanced).
• Scalable accuracy of the IGBT model.
NIGBT_Average_T1
12 © 2011 ANSYS, Inc.
Gate
• Forward biased
– Space Charge zone creation,
MOS channel
– MOS channel : e- injection,
– « Anode junction » biased : h+ injection,
– Storage region.
p ∂p
IGBT principle : what is an IGBT • Combination of two other devices :
• Bipolar transistor
- Low on-state voltage drop - 2 types of carriers - Relatively low frequency
=> Best trade-off between switching loss & time and on-state voltage drop.
8
8
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
IGBT principle
gate stray inductances, input capacity) : gate voltage slope.
14 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
Overview of differences between IGBT models :
– P(t) injection calculated from simulated current and voltage waveforms, – Power follows the simulated switching waveforms.
15 © 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT modeling with Simplorer using the characterization tool
Wendy Lei ANSYS China
1
© 2011 ANSYS, Inc.
January 13, 2015
Overview
Introduction on IGBT power device
– Smaller size – Electro-thermal stability : ease of paralleling – Possibility of voltage controlled converter
ABB
5
5
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
Jp
=
qD
p
U
T
E− ∂x
Jn
=
qDn
n UT
E
+
∂n ∂x
J tot
=
Qs τ
+
∂Qs ∂t
∂2 p p ∂p D ∂x2 = τ + ∂t
9
© 2011 ANSYS, Inc.
January 13, 2015
Cathode
N+
N+
P
P
P+
SCZ
N- Base
Qs
P+ Emitter Anode
IGBT device level model in Simplorer
Overview of differences between IGBT models :
Waveforms, switching times
• Average IGBT model :
– Not focus on time values, – No transient calculation.
January 13, 2015
NIGBT_BasicDyn1
NIGBT_AdvDyn1
IGBT device level model in Simplorer
Overview of differences between IGBT models :
• Average IGBT model :
– A, B, F
• Basic dynamic model :
– A, C, D, F
• Advanced dynamic model :
– A, C, E, F
13 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
Overview of differences between IGBT models :
Power injection and loss calculation
• Average IGBT model :
– Power loss based on sampled current and voltage, – Pulsed time function or averaged power on period for faster simulation, – Power loss is direct fitting target.
Introduction on IGBT power device
IGBT principle : what for?
• Is an electrical switch, • Used to design/set up different kind of converter topologies, • Convert electrical energy (DC or alternative).
IGBT device level model in Simplorer
11 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
• Family model conception,
• Trade-off between simulation speed and accuracy,
IGBT device level model in Simplorer (Prof. J. Aurich)
Concept and differences overview Insight of the model
Modelling using the characterization tool
January 13, 2015
Introduction on IGBT power device
IGBT principle
• Structure and features
– MOS gate (low drive power, gate controlled turn-off capability),
Example of a basic dynamic IGBT model creation
2
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
3
© 2011 ANSYS, Inc.
January 13, 2015
• Basic dynamic model :
– Power loss is direct fitting target, – P(t) injection calculated from simulated current and voltage waveforms.
• Advanced dynamic model :
• Basic dynamic model :
– Electrical transient waveforms calculated, – Target on loss energy, – Used for approximation.
• Advanced dynamic model :
– Electrical transient waveforms calculated, – Times parameters included in the parameter optimization.
9
Introduction on IGBT power device
IGBT principle
• 2 main technologies :
– Planar type
• NPT (Non Punch Through), • PT (Punch Through), • SPT (Soft Punch Through).
Ik
Uk
K1
Ik
On/Off
K1 Uk
4
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
Large range of use of IGBT in power electronics applications
• Assets of IGBT power converters :
Gate
– Trench type
• Trench FS (Field Stop), • CST (Carrier Stored Trench-gate), …
Gate
Gate
MOS channel
Gate MOS channel
10
10 © 2011 ANSYS, Inc.
January 13, 2015
IGBT principle
• Drawbacks
– Tail current • During turn-off, • Impacts the switching speed, • Impacts the on-state and switching losses.
– Parasitic Thyristor latch-up • Loss of control of the device.
• MOSFET transistor
- Voltage controlled device - High value of Ron - High switching speed
I.G.B.T (Insulated Gate Bipolar Transistor)
6
6© Biblioteka 011 ANSYS, Inc.• Working point dependancy :
– Nominal working point stands for the normal operating conditions of the device found in the datasheet,
– Includes the nominal blocking voltage, – Includes the nominal load current, – Includes the nominal junction temperature, – Includes the nominal drive conditions (gate resistors, drive voltage,
– Increase of swtiching time during turnoff
View of a planar type NPT IGBT with its equivalent electrical circuit
7
7
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
– P+ emitter : holes injection under high level injection => Conductivity modulation,
– High forward conduction current density,
• 3 models based on 2 basic approaches :
– Average IGBT, – Dynamic IGBT (basic and advanced).
• Scalable accuracy of the IGBT model.
NIGBT_Average_T1
12 © 2011 ANSYS, Inc.
Gate
• Forward biased
– Space Charge zone creation,
MOS channel
– MOS channel : e- injection,
– « Anode junction » biased : h+ injection,
– Storage region.
p ∂p
IGBT principle : what is an IGBT • Combination of two other devices :
• Bipolar transistor
- Low on-state voltage drop - 2 types of carriers - Relatively low frequency
=> Best trade-off between switching loss & time and on-state voltage drop.
8
8
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
IGBT principle
gate stray inductances, input capacity) : gate voltage slope.
14 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
Overview of differences between IGBT models :
– P(t) injection calculated from simulated current and voltage waveforms, – Power follows the simulated switching waveforms.
15 © 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT modeling with Simplorer using the characterization tool
Wendy Lei ANSYS China
1
© 2011 ANSYS, Inc.
January 13, 2015
Overview
Introduction on IGBT power device
– Smaller size – Electro-thermal stability : ease of paralleling – Possibility of voltage controlled converter
ABB
5
5
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
Jp
=
qD
p
U
T
E− ∂x
Jn
=
qDn
n UT
E
+
∂n ∂x
J tot
=
Qs τ
+
∂Qs ∂t
∂2 p p ∂p D ∂x2 = τ + ∂t
9
© 2011 ANSYS, Inc.
January 13, 2015
Cathode
N+
N+
P
P
P+
SCZ
N- Base
Qs
P+ Emitter Anode
IGBT device level model in Simplorer
Overview of differences between IGBT models :
Waveforms, switching times
• Average IGBT model :
– Not focus on time values, – No transient calculation.
January 13, 2015
NIGBT_BasicDyn1
NIGBT_AdvDyn1
IGBT device level model in Simplorer
Overview of differences between IGBT models :
• Average IGBT model :
– A, B, F
• Basic dynamic model :
– A, C, D, F
• Advanced dynamic model :
– A, C, E, F
13 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
Overview of differences between IGBT models :
Power injection and loss calculation
• Average IGBT model :
– Power loss based on sampled current and voltage, – Pulsed time function or averaged power on period for faster simulation, – Power loss is direct fitting target.
Introduction on IGBT power device
IGBT principle : what for?
• Is an electrical switch, • Used to design/set up different kind of converter topologies, • Convert electrical energy (DC or alternative).
IGBT device level model in Simplorer
11 © 2011 ANSYS, Inc.
January 13, 2015
IGBT device level model in Simplorer
• Family model conception,
• Trade-off between simulation speed and accuracy,
IGBT device level model in Simplorer (Prof. J. Aurich)
Concept and differences overview Insight of the model
Modelling using the characterization tool
January 13, 2015
Introduction on IGBT power device
IGBT principle
• Structure and features
– MOS gate (low drive power, gate controlled turn-off capability),
Example of a basic dynamic IGBT model creation
2
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
3
© 2011 ANSYS, Inc.
January 13, 2015
• Basic dynamic model :
– Power loss is direct fitting target, – P(t) injection calculated from simulated current and voltage waveforms.
• Advanced dynamic model :
• Basic dynamic model :
– Electrical transient waveforms calculated, – Target on loss energy, – Used for approximation.
• Advanced dynamic model :
– Electrical transient waveforms calculated, – Times parameters included in the parameter optimization.
9
Introduction on IGBT power device
IGBT principle
• 2 main technologies :
– Planar type
• NPT (Non Punch Through), • PT (Punch Through), • SPT (Soft Punch Through).
Ik
Uk
K1
Ik
On/Off
K1 Uk
4
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device
Large range of use of IGBT in power electronics applications
• Assets of IGBT power converters :
Gate
– Trench type
• Trench FS (Field Stop), • CST (Carrier Stored Trench-gate), …
Gate
Gate
MOS channel
Gate MOS channel
10
10 © 2011 ANSYS, Inc.
January 13, 2015
IGBT principle
• Drawbacks
– Tail current • During turn-off, • Impacts the switching speed, • Impacts the on-state and switching losses.
– Parasitic Thyristor latch-up • Loss of control of the device.
• MOSFET transistor
- Voltage controlled device - High value of Ron - High switching speed
I.G.B.T (Insulated Gate Bipolar Transistor)
6
6© Biblioteka 011 ANSYS, Inc.• Working point dependancy :
– Nominal working point stands for the normal operating conditions of the device found in the datasheet,
– Includes the nominal blocking voltage, – Includes the nominal load current, – Includes the nominal junction temperature, – Includes the nominal drive conditions (gate resistors, drive voltage,
– Increase of swtiching time during turnoff
View of a planar type NPT IGBT with its equivalent electrical circuit
7
7
© 2011 ANSYS, Inc.
January 13, 2015
Introduction on IGBT power device