2SK975资料

Typical Transfer Characteristics
4 Drain Current ID (A)
4
VDS = 10 V Pulse Test
3
3.5 V
3
2 3V 1 VGS = 2.5 V
2
1 75°C 0
–25°C TC= 25°C 5
0
6 2 4 8 10 Drain to Source Voltage VDS (V)
0.4
10 V
1A ID = 0.5 A
0.2
0
6 2 4 8 10 Gate to Source Voltage VGS (V)
0.1
0.2 0.5 1.0 2 Drain Current ID (A)
5
Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 1.0 Pulse Test ID = 2 A 1A 0.5 A VGS = 4 V 5 2 1.0
µs s 10 0 µ 10
Maximum Safe Operation Area
3
PW
1
Drain Current ID (A)
t s ho m 1S s( 0m
=1
1.0
1.0
D
0.3
C
O
pe
)
ra
tio
0.5
0.1 Operation in this area is limited by RDS (on) 0.03 Ta = 25°C
ID = 1.5 A
4 6 8 Gate Charge Qg (nc)
0 10
0.1
0.5 1.0 0.2 2 Drain Current ID (A)
5
5
2SK975
Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test Reverse Drain Current IDR (A) 1.6 10 V 15 V 5V 0.8 0.4 VGS = 0, –5 V
1
Ratings 60 ±20 1.5 4.5 1.5 900 150 –55 to +150
Unit V V A A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 — — 1.0 — Typ — — — — — 0.3 0.4 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.9 — — — — — — — — — 1.5 140 70 20 3 12 50 30 0.9 45 Max — — ±10 100 2.0 0.4 0.55 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1.5 A, VGS = 0 I F = 1.5 A, VGS = 0, diF/dt = 50 A/µs I D = 1 A, VGS = 10 V, RL = 30 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 I D = 1 A, VGS = 4 V *1 I D = 1 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
10.1 Min
8.0 ± 0.5
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
1.2
0
0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V)
6
元器件交易网
4.8 ± 0.3 3.8 ± 0.3
Unit: mm
0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max
2.3 Max
Forward Transfer Admittance vs. Drain Current VDS = 10 V –25°C Pulse Test T = 25°C C
0.8
0.6
75°C 0.5
0.4 VGS = 10 V 2 A 0.5 A 1A
0.2 0.1 0.05 0.05
0.2
0 –40
3 1 2 4 Gate to Source Voltage VGS (V)
3
2SK975
Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain to Source Saturation Voltage VDS (on) (V) 0.8 2A 0.6 Static Drain to Source on State Resistance RDS (on) (Ω) Pulse Test 5 Pulse Test 2 VGS = 4 V 1.0 0.5 0.2 0.1 0.05 0.05 Static Drain to Source On State Resistance vs. Drain Current
Switching Characteristics td (off) 50 Switching Time t (ns) tf 20 10 5 td (on) 2 1 0.05 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1 %
• •
tr
40 20
8 4
25 V 10 V 0 2
2SK975
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
n
0
50 100 Case Temperature TC (°C)
150
0.01 0.1 0.3 30 100 1.0 3 10 Drain to Source Voltage VDS (V)
Typical Output Characteristics 5 10 V 4.5 V Pulse Test 5V 7V 4V Drain Current ID (A) 5
0 40 120 80 Case Temperature TC (°C)
160
0.1
0.2 2 0.5 1.0 Drain Current ID (A)
5
4
2SK975
Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) 1000 300 Ciss 100 30 Crss 10 3 1 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 5 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Coss VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Vol 0.05
Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) 80 VDD = 50 V 25 V 10 V 60 VDS VDD = 50 V VGS 12 20 Gate to Source Voltage VGS (V) 16 100
Outline
TO-92 Mod
D G
32
1 1. Source 2. Drain 3. Gate
S
2SK975
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(off)
2
2SK975
Power vs. Temperature Derating 1.5 Channel Dissipation Pch (W) 10