鼎日DTQ3115规格书

1
DTQ3115
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient
a, b
Symbol RthJA Steady State RthJF
Typical 31 13
Maximum 42 16
Unit °C/W
Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 72 °C/W.
DFN3x3-8(punch type)
DFN3x3-8(saw type)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditionsd IR/Convection TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 12 ±8 - 14.5 - 12.7 - 10.7b, c - 8.7b, c - 25 - 6.7 - 3.5b, c 6.87 4.6 2.9b, c 1.96b, c - 55 to 150 260 W A Unit V
0.6 - 50
°C
Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. e. In this document, any reference to the Case represents the body of the DFN2X2 device and Foot is the bump.
Output Characteristics
0.06
Transfer Characteristics
3000
0.05
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (m
2000
0.04
VGS = 1.8 V
0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 0 5 10 ID - Drain Current (A) 15 20
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = - 6 V, RL = 4 ID - 1 A, VGEN = - 4.5 V, Rg = 6 VGS = - 0.1 V, f = 1 MHz VDS = - 6 V, VGS = - 5 V, ID = - 1 A VDS = - 6 V, VGS = - 4.5 V, ID = - 1 A VDS = - 6 V, VGS = 0 V, f = 1 MHz 2220 865 555 38 35 7.3 5.9 28 14 25 380 240 21 40 570 360 ns 57 53 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = 5 V VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 70 °C VDS 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A VGS = - 2.5 V, ID = - 1 A VGS = - 1.8 V, ID = - 1 A VDS = - 4 V, ID = - 1 A - 20 0.014 0.017 0.021 8.3 0.015 0.019 0.023 S - 0.75 - 12 - 13.3 2.4 - 0.9 - 100 -1 - 10 V mV/°C V nA µA A Symbol Test Conditions Min. Typ. Max. Unit
2
DTQ3115
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Symbol IS ISM VSD trr Qrr ta tb IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C IS = - 1 A, VGS = 0 V - 0.65 311 1.136 116 195 Test Conditions TC = 25 °C Min. Typ. Max. - 6.5 - 25 - 1.2 467 1.705 Unit Drain-Source Body Diode Characteristics A V ns µC ns
DTQ3115
P-Channel 1.8 V (G-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 12 RDS(on) () 0.015 at VGS = - 4.5 V 0.019 at VGS = - 2.5 V 0.023 at VGS = - 1.8 V ID (A)a - 14.5 - 13.0 - 11.5 35 nC Qg (Typ.)
1000 Crss
Coss
0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
5 ID = 1 A R DS(on) - On-Resistance (Normalized) 1.6 ID = 1 A 1.4
APPLICATIONS
Pin Description
Top View
DD DD SG
• PA Switch • Battery Switch • Load Switch
S
Bottom View
Top View
DDD D
Bottom View
Top View
SS
SSS

G
1 2 3 4 8 7 6 5
Capacitance
V - Gate-to-Source Voltage (V) GS
4 VDS = 6 V 3
VGS = 4.5 V, 2.5 V
1.2
VGS = 1.8 V
2
VDS = 9.6 V
1.0
1
0.8
0 0 5 10 15 20 25 30 Qg - Total Gate Charge (nC) 35 40
Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
10
5.0 TC = 125 °C
5 VGS = 1 V
2.5 TC = 25 °C TC = - 55 °C
0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V)
0.0 0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
• Halogen-free according to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small DFN3x3 Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area • Compliant to RoHS Directive 2002/95/EC
3
DTQ3115
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10.0
VGS = 5 V thru 1.8 V I D - Drain Current (A) I D - Drain Current (A)
12
7.5
VGS = 1.5 V