IXBP5N160G;IXBH5N160G;中文规格书,Datasheet资料

TO-247 AD
Dim. A B C D* E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Cies QGon VF RthJC
IC = 3 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.3 mA; VGE = VCE VGE = 0 V; VCE = VCES; TVJ = 25°C VCE = 0.8VCES; TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 3 A VGE = 10/0 V; RG = 47 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 10 V; IC = 3 A (reverse conduction); IF = 3 A
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031
ixbh5n160g 2003ixys all rights reserved advancedtechnical information ixys semiconductor gmbh edisonstr. 15, d-68623 lampertheim phone: +49-6206-503-0, fax: +49-6206-503627 ixys corporation 3540 bassett street, santa clara ca 95054 phone: (408) 982-0700, fax: 408-496-0670 ixbp 5n160 ixbh5n160 70ns high voltage bimosfet tm monolithic bipolar mos transistor to-247 ad to-220ab (tab)ixys reserves changelimits, test conditions dimensions.igbt symbol conditions maximum ratings 150c1600 25c5.7 90c3.5 cekrbsoa, clamped inductive load; 0.8vces 25c68 symbolconditions characteristic values 25c,unless otherwise specified) min. typ. max. 25c4.9 7.2 125c5.6 0.3ma; ce3.5 5.5 25c0.15 ma 0.8vces 125c0.05 ma 500na 140ns 200ns d(off)120 ns 70ns mhz325 pf 26nc (reverseconduction); thjc1.85 inductiveload, highvoltage bimosfet tm highvoltage mosfets significantlylower voltage drop mosfetcompatible control 10 gatevoltage fastswitching highfrequency operation reverseconduction capability industrystandard package to-247adepoxy meets
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
Preliminary data sheet
IXBP 5N160 G IXBH 5N160 G
IC25 VCES VCE(sat) tf
TO-220 AB
G C E
= 5.7 A = 1600 V = 4.9 V = 70 ns
(IXBP)
C
C (TAE
(IXBH)
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol TC = 25°C TC = 90°C VGE = 10/0 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 1600 ± 20 5.7 3.5 6 0.8VCES 68 V V A A A W
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 3.5 50 100 140 200 120 70 325 26 6 7.2 5.5 150 V V V µA µA nA ns ns ns ns pF nC V 1.85 K/W
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
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321
IXBP 5N160 G IXBH 5N160 G
Component Symbol TVJ Tstg MD mounting torque (TO-220) (TO-247) Conditions Maximum Ratings -55...+150 -55...+125 0.6 1.2 °C °C Nm Nm TO-220 AB Dimensions
321
0.102
© 2003 IXYS All rights reserved
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分销商库存信息:
IXYS IXBP5N160G IXBH5N160G
Symbol RthCH Weight
Conditions with heatsink compound (TO-220) (TO-247)
Characteristic Values min. typ. max. 0.25 2 6 K/W g g
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Features • High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability • industry standard package - TO-220AB - TO-247AD epoxy meets UL94V-0 Applications • switched mode power supplies • DC-DC converters • resonant converters • lamp ballasts • laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627