FQPF7N60中文资料
FQP13N50C中文资料
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
1 10 100 -100
FQP13N50C FQPF13N50C
500
13
13 *
8
8*
52
52 *
± 30
860
13
19.5
4.5
195
48
1.56
0.39
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Thermal Characteristics
Symbol RθJC RθJS RθJA
2.0 --
4.0
V
VGS = 10 V, ID = 6.5 A
-- 0.39 0.48
Ω
VDS = 40 V, ID = 6.5 A
(Note 4) --
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
场效应管
场效应管
1 编号004
2 规格FQPF8N60C FQPF5N60C
3 技术要求
3.1 外观
a重缺陷：元器件外观不清洁；包装不防震，防压，防潮，有腐蚀性；包装盒外标记错误，外观有明显的伤痕，引线松动断裂，无标记，标记错误，标记辨认不清等。
b 轻缺陷：打印标记不清晰，但可辨认，管壳表面有轻微划伤，管脚镀层局部脱落,但不影响使用。
3.2 电性能
名称开启电压v 内阻Ω跨导s 耐压v FQPF8N60C 2.5-3.5 <1.5 <2 >600 FQPF5N60C 2.9~3.0 1.9~2.2 1.45~1.62 651~693
3.3 可焊性
焊锡层应覆盖元件引线表面，并且平滑光亮，不应有小滴。
3.4 外形尺寸
外形尺寸见设计文件BSZM-ZX-JS-016-外购件-场效应管-外形结构尺寸
4 检验方法
4.1 检验条件
温度：25℃±5℃；
湿度：≤65%
4.2 检验项目
4.2.1 外观：目测。
4.2.2 电性能：用UI9610MOS管分选仪器测试，测量值符合3.2电性能的要求
4.2.3 可焊性：把元件引线放入浸焊炉，观察表面。
4.2.4 外形尺寸：使用游标卡尺测量。
5 检验规则
按 GB2828 中规定的一般检查水平Ⅱ正常检查一次抽样方案进行。
外形尺寸按 GB2828-2003 特殊检查水平 S-4
可焊性每批抽取 10 只，Ac=0 Re=1
6 质量判定
项目外观重缺陷外观轻缺陷电性能外形尺寸AQL 0.250.50.65 4.0。
FQPF2N60
©2000 Fairchild Semiconductor International Rev. A, April 2000F Q P F 2N 60TO-220FG SD©2000 Fairchild Semiconductor International FQPF2N60(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Rev. A, April 2000Electrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 100mH, I AS = 1.6A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD 2.4A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width 300µs, Duty cycle 2%5. Essentially independent of operating temperatureSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA600----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.4--V/°C I DSS Zero Gate Voltage Drain Current V DS = 600 V, V GS = 0 V ----10µA V DS = 480 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 0.8 A -- 3.7 4.7Ωg FSForward TransconductanceV DS = 50 V, I D = 0.8 A--2.0--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--270350pF C oss Output Capacitance--4050pF C rssReverse Transfer Capacitance--57pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 300 V, I D = 2.4 A,R G = 25 Ω--1030ns t r Turn-On Rise Time --2560ns t d(off)Turn-Off Delay Time --2050ns t f Turn-Off Fall Time --2560ns Q g Total Gate Charge V DS = 480 V, I D = 2.4 A,V GS = 10 V--9.011nC Q gs Gate-Source Charge -- 1.6--nC Q gdGate-Drain Charge--4.3--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 1.6A I SM Maximum Pulsed Drain-Source Diode Forward Current---- 6.4A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 1.6 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 2.4 A,dI F / dt = 100 A/µs--180--ns Q rrReverse Recovery Charge--0.72--µC©2000 Fairchild Semiconductor International F Q P F 2N 60Rev. A, April 2000©2000 Fairchild Semiconductor InternationalFQPF2N60Rev. A, April 2000©2000 Fairchild Semiconductor International F Q P F 2N 60Rev. A, April 2000©2000 Fairchild Semiconductor International FQPF2N60Rev. A, April 2000©2000 Fairchild Semiconductor InternationalF Q P F 2N 60Rev. A, April 2000TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.©2000 Fairchild Semiconductor International Rev. A, January 2000This datasheet has been download from: Datasheets for electronics components.。
FAIRCHILD FQPF20N06 60V N-Channel MOSFET 说明书
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQPF20N06TO-220FG SDNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 800µH, I AS = 15A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 20A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.07--V/°C I DSS Zero Gate Voltage Drain Current V DS = 60 V, V GS = 0 V ----1µA V DS = 48 V, T C = 150°C ----10µA I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -25 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 7.5 A --0.0480.06Ωg FSForward TransconductanceV DS = 25 V, I D = 7.5 A --10--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--450590pF C oss Output Capacitance--170220pF C rssReverse Transfer Capacitance--2535pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 30 V, I D = 10 A,R G = 25 Ω--520ns t r Turn-On Rise Time --45100ns t d(off)Turn-Off Delay Time --2050ns t f Turn-Off Fall Time --2560ns Q g Total Gate Charge V DS = 48 V, I D = 20 A,V GS = 10 V--11.515nC Q gs Gate-Source Charge --3--nC Q gdGate-Drain Charge--4.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----15A I SM Maximum Pulsed Drain-Source Diode Forward Current----60A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 15 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 20 A,dI F / dt = 100 A/µs --43--ns Q rrReverse Recovery Charge--50--nC(Note 4)(Note 4, 5)(Note 4, 5)(Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。
【MOS管】FQPF5N60C(美国仙童FAIRCHILD)
Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 18.9mH, I AS = 4.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤4.5A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 2.25 A-- 2.0 2.5Ωg FSForward TransconductanceV DS = 40 V, I D = 2.25 A (Note 4)-- 4.7--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--515670pF C oss Output Capacitance--5572pF C rssReverse Transfer Capacitance--6.58.5pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 300 V, I D = 4.5A,R G = 25 Ω(Note 4, 5)--1030ns t r Turn-On Rise Time --4290ns t d(off)Turn-Off Delay Time --3885ns t f Turn-Off Fall Time --46100ns Q g Total Gate Charge V DS = 480 V, I D = 4.5A,V GS = 10 V(Note 4, 5)--1519nC Q gs Gate-Source Charge -- 2.5--nC Q gdGate-Drain Charge--6.6--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 4.5A I SM Maximum Pulsed Drain-Source Diode Forward Current----18A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 4.5 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 4.5 A,dI F / dt = 100 A/µs (Note 4)--300--ns Q rrReverse Recovery Charge-- 2.2--µCFQP5N60C/FQPF5N60CDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
FCH47N60中文资料
元器件交易网
Typical Performance Characteristics
Figure 1. On-Region Characteristics
V GS
Top : 15.0 V
102
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
元器件交易网
FCH47N60 / FCA47N60 600V N-Channel MOSFET
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient
Typ.
--
Max.
41.7
Package Marking and Ordering Information
GD S
TO-247
G DS
TO-3P
D
!
"
!"
G!
" "
!
S
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
FQPF8N60C管装 规格书推荐
FQPF8N60C 2.6 -62.5
Units °C/W °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, March 2004
FQP8N60C/FQPF8N60C
Electrical Characteristics
Symbol
Parameter
FQP8N60C/FQPF8N60C
FQP8N60C/FQPF8N60C
600V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQPF2N60C资料
100
150℃ 25℃
※ Notes :
1. 2.
2V5GS0μ=s0VPulse
Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
VGS = 0 V, IS = 2 A,
-- 230
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP2N60C 2.32 0.5 62.5
FQPF2N60C 5.5 -62.5
元器件交易网
FQP2N60C/FQPF2N60C
FQP2N60C/FQPF2N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
7N60中文资料
UNISONIC TECHNOLOGIES CO., LTD7N60 Power MOSFET7.4 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.FEATURES* R DS(ON) = 1Ω @V GS = 10 V* Low gate and reverse transfer Capacitance ( C: 16 pF typical ) * Fast switching capability * Avalanche energy tested* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-22011TO-220F*Pb-free plating product number:7N60LORDERING INFORMATIONOrder Number Pin AssignmentNormalLead Free Plating Package 1 2 3 Packing7N60-TA3-T 7N60L-TA3-T TO-220 G D S Tube 7N60-TF3-T 7N60L-TF3-T TO-220F G D S TubeABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 1) I AR 7.4 AT C = 25°C 7.4 AContinuous Drain CurrentT C = 100°C I D 4.7 APulsed Drain Current (Note 1) I DM 29.6 A Avalanche Energy, Single Pulsed (Note 2) E AS 580 mJ Avalanche Energy, Repetitive Limited by T J(MAX) E AR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns 142 WPower Dissipation (T C = 25 ) Derate above 25 P D1.14 W/ Junction Temperature T J +150 Operating and Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITJunction-to-Ambient θJA 62.5 °C/W Junction-to-Case θJC 0.88 °C/W Case-to-Sink θCS 0.5 °C/WELECTRICAL CHARACTERISTICS (T C =25℃, unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 600 VV DS = 600V, V GS = 0V 10µADrain-Source Leakage Current I DSSV DS = 480V, T C = 125°C100µA Gate-Body Leakage Current, Forward I GSSF V GS = 30V, V DS = 0V 100nA Gate-Body Leakage Current, Reverse I GSSR V GS = -30V, V DS = 0V -100nABreakdown Voltage TemperatureCoefficient△BV DSS /△T J I D = 250µA, Referenced to 25°C 0.67 V/On Characteristics Gate Threshold Voltage V GS(TH)V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON)V GS = 10V, I D = 3.7A 1.0ΩForward Transconductance g FS V DS = 50V, I D = 3.7A (Note 4) 6.4 S Dynamic Characteristics Input Capacitance C ISS 1400pFOutput Capacitance C OSS 180pFReverse Transfer Capacitance C RSSV DS =25V, V GS =0V, f=1.0 MHz 21pF Switching Characteristics Turn-On Delay Time t d(ON) 70ns Turn-On Rise Time t R 170ns Turn-Off Delay Time t d(OFF) 140nsTurn-Off Fall Time t FV DD =300V, I D =7.4A, R G =25Ω(Note 4, 5) 130ns Total Gate Charge Q G 29 38nCGate-Source Charge Q GS 7 nCGate-Drain Charge Q GDV DS =480V, I D =7.4A, V GS =10 V(Note 4, 5)14.5 nCELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITDrain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage V SD V GS = 0V, I S = 7.4 A 1.4VMaximum Continuous Drain-Source DiodeForward CurrentI S 7.4AMaximum Pulsed Drain-Source Diode ForwardCurrentI SM 29.6AReverse Recovery Time t RR 320 ns Reverse Recovery Charge Q RR V GS = 0V, I S = 7.4 A, d IF / dt = 100A/µs (Note 4) 2.4 µC Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 19.5mH, I AS = 7.4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 7.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS1011010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )On-Region Characteristics1010010Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics468101010.0D r a i n -S o u r c eO n -R e s i s t a n c e , R D S (O N ) (Ω)Drain Current , I D (A)510On-Resistance Variation vs . Drain Currentand Gate Voltage1520250.51.01.52.02.5100100.2Source-Drain Voltage , V SD (V)R e v e r s e D r a i n C u r r e n t , I D R (A )Body Diode Forward Voltage Variation vs .Source Current and Temperature0.40.60.81.01.210110Drain-SourceVoltage , V DS (V)C a p a c i t a n c e (p F )Capacitance Characteristics10101011010Drain -Source Voltage , V DS (V)I D , D r a i n C u r r e n t (A )Maximum Safe Operating Area102101100103102。
IKW75N60T中文资料
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
175°C K75T60 PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
IRF7N60FP中文资料
IRF7N60
POWER MOSFET
ORDERING INFORMATION
Part Number ....................IRF7N60FP Package TO-220 Full Pak IRF7N60...............................................TO-220
VSD ton trr ** 415
1.4
V ns ns
* Pulse Test: Pulse Width 300µs, Duty Cycle ** Negligible, Dominated by circuit inductance
2%
Page 2
元器件交易网
IRF7 60 N
元器件交易网
IRF7N60
POWER MOSFET
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FQPF12N60中文资料
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
©2000 Fairchild Semiconductor International
Rev. A, April 2000
元器件交易网
FQPF12N60
ID , Drain Current [A]
Typical Characteristics
DS(on) R [Ω], Drain-Source On-Resistance
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF12N60 600 5.8 3.7 23 ±30 790 5.8 5.5 4.5 55 0.44
-55 to +150
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
fqpf7n80c场效应管参数
一、场效应管概述场效应管（Field-Effect Transistor，简称FET），是一种可以用来控制电流的电子元件。
它的工作原理是利用外加电场调节电子的传输情况，因此得名。
相比双极晶体管，场效应管具有输入阻抗大、失真小、噪声低等优点，因此在现代电子电路中得到广泛应用。
二、场效应管的类型根据不同的工作原理和结构，场效应管可以分为MOSFET（金属氧化物半导体场效应晶体管）和JFET（结型场效应晶体管）两种类型。
其中，MOSFET主要应用在大规模集成电路和功率器件中，而JFET则多用于低噪声放大器和高输入电阻的电路中。
三、场效应管的参数1. 静态参数静态参数是指场效应管在静态工作状态下所表现出的特性。
主要包括沟道阻抗、漏极电流、栅极截止电压和饱和电流等。
这些参数对于确定场效应管的工作状态和放大特性具有重要的意义。
2. 动态参数动态参数是指场效应管在变化的工作状态下所表现出的特性。
主要包括输入电容、跨导、截止频率和噪声系数等。
这些参数对于评估场效应管在高频放大和信号处理中的性能具有重要的意义。
四、场效应管参数的影响因素1. 材料场效应管所采用的半导体材料对其性能具有重要的影响。
不同的材料具有不同的载流子迁移率、禁带宽度和掺杂浓度等特性，直接影响场效应管的电路特性。
2. 结构场效应管的结构形式会影响其输入输出特性和频率响应。
MOSFET 和JFET的结构差异导致其工作特性不同，因此在电路设计中需要根据实际需求选择合适的结构。
3. 工艺制造工艺对场效应管参数的稳定性和一致性具有重要的影响。
良好的工艺能够保证场效应管的性能稳定，并且可以生产出一致性较高的器件，满足现代电子产品对于性能和品质的要求。
五、场效应管参数的测试方法场效应管参数的测试通常采用直流和交流两种方法。
直流测试可以测量场效应管的静态参数，如漏极电流和栅极截止电压；而交流测试则可以测量场效应管的动态参数，如频率响应和噪声特性。
根据实际需求，选择合适的测试方法可以准确评估场效应管的性能。
FQP6N80C中文资料
3.0 --
5.0
V
VGS = 10 V, ID = 2.75 A
-- 2.1 2.5
Ω
VDS = 50 V, ID = 2.75 A (Note 4) --
5.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
元器件交易网
FQP6N80C/FQPF6N80C
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Features
• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
101
100
10-1 0.2
150℃ 25℃
※ Notes : 1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
FCH47N60F中文资料
FCH47N60F 600V N-Channel MOSFETTMMay 2006SuperFETFCH47N60F600V N-Channel MOSFETFeatures•650V@T J = 150°C •Typ. R DS(on) = 0.062Ω•Fast Recovery Type ( t rr = 240ns)•Ultra Low Gate Charge (typ. Q g = 210nC)•Low Effective Output Capacitance (typ. C oss eff. = 420pF)•100% avalanche testedDescriptionSuperFET TM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.G SDTO-247DGSAbsolute Maximum Ratings SymbolParameterFCH47N60FUnitV DSS Drain-Source Voltage 600V I D Drain Current - Continuous (T C = 25°C)- Continuous (T C = 100°C)4729.7A A I DM Drain Current - Pulsed(Note 1)141A V GSS Gate-Source voltage± 30V E AS Single Pulsed Avalanche Energy (Note 2)1800mJ I AR Avalanche Current(Note 1)47A E AR Repetitive Avalanche Energy (Note 1)41.7mJ dv/dt Peak Diode Recovery dv/dt (Note 3)50V/ns P D Power Dissipation(T C = 25°C)- Derate above 25°C4173.33W W/°C T J, T STG Operating and Storage Temperature Range -55 to +150°C T LMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds300°CThermal CharacteristicsSymbolParameterTyp.Max.UnitR θJC Thermal Resistance, Junction-to-Case --0.3°C/W R θCS Thermal Resistance, Case-to-Sink 0.24--°C /W R θJAThermal Resistance, Junction-to-Ambient--41.7°C/WFCH47N60F 600V N-Channel MOSFETPackage Marking and Ordering InformationDevice MarkingDevicePackageReel SizeTape WidthQuantityFCH47N60FFCH47N60FTO-247--30Electrical Characteristics T C= 25°C unless otherwise notedSymbolParameterConditionsMinTypMax UnitsOff Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250μA, T J = 25°C 600----V V GS = 0V, I D = 250μA, T J = 150°C --650--V ΔBV DSS / ΔT J Breakdown Voltage Temperature CoefficientI D = 250μA, Referenced to 25°C --0.6--V/°C BV DS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 47A --700--V I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C --------10100μA μA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 23.5A --0.0620.073Ωg FS Forward Transconductance V DS = 40V, I D = 23.5A (Note 4)--40--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--59008000pF C oss Output Capacitance--32004200pF C rss Reverse Transfer Capacitance --250--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --160--pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --420--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 47A R G = 25Ω(Note 4, 5)--185430ns t r Turn-On Rise Time --210450ns t d(off)Turn-Off Delay Time --5201100ns t f Turn-Off Fall Time --75160ns Q g Total Gate Charge V DS = 480V, I D = 47A V GS = 10V(Note 4, 5)--210270nC Q gs Gate-Source Charge --38--nC Q gd Gate-Drain Charge--110--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----47A I SM Maximum Pulsed Drain-Source Diode Forward Current ----141A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 47A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 47AdI F /dt =100A/μs (Note 4)--240--ns Q rrReverse Recovery Charge--2.04--μCNOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 18A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 47A, di/dt ≤ 1,200A/μs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFET Gate Charge Test Circuit & WaveformResistive Switching Test Circuit & WaveformsUnclamped Inductive Switching Test Circuit & WaveformsFCH47N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & WaveformsFCH47N60F 600V N-Channel MOSFETFCH47N60F 600V N-Channel MOSFETRev. I19TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect ™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX ™MSXPro ™OCX ™OCXPro ™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure ™RapidConnect ™µSerDes ™ScalarPump ™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。
FQP12N60C中文资料
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
元器件交易网
FQP12N60C/FQPF12N60C
Typical Characteristics
V Top : 15.0GSV
10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 101 Bottom : 4.5 V
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2003 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
2.0 --
4.0
V
VGS = 10 V, ID = 6 A
-- 0.53 0.65
Ω
VDS = 40 V, ID = 6 A
(Note 4) --
13
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
FAIRCHILD FQPF47P06 60V P-Channel MOSFET 说明书
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQPF47P06TO-220FG S DNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 1.06mH, I AS = -30A, V DD = -25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ -47A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = -250 µA, Referenced to 25°C ---0.06--V/°C I DSS Zero Gate Voltage Drain Current V DS = -60 V, V GS = 0 V -----1µA V DS = -48 V, T C = 150°C -----10µA I GSSF Gate-Body Leakage Current, Forward V GS = -25 V, V DS = 0 V -----100nA I GSSRGate-Body Leakage Current, ReverseV GS = 25 V, V DS = 0 V----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = -250 µA -2.0---4.0V R DS(on)Static Drain-Source On-ResistanceV GS = -10 V, I D = -15 A --0.0210.026Ωg FSForward TransconductanceV DS = -30 V, I D = -15 A--19--SDynamic CharacteristicsC iss Input Capacitance V DS = -25 V, V GS = 0 V, f = 1.0 MHz--28003600pF C oss Output Capacitance--13001700pF C rssReverse Transfer Capacitance--320420pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = -30 V, I D = -23.5 A,R G = 25 Ω--50110ns t r Turn-On Rise Time --450910ns t d(off)Turn-Off Delay Time --100210ns t f Turn-Off Fall Time --195400ns Q g Total Gate Charge V DS = -48 V, I D = -47 A,V GS = -10 V--84110nC Q gs Gate-Source Charge --18--nC Q gdGate-Drain Charge--44--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current -----30A I SM Maximum Pulsed Drain-Source Diode Forward Current-----120A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = -30 A -----4.0V t rr Reverse Recovery Time V GS = 0 V, I S = -47 A,dI F / dt = 100 A/µs--130--ns Q rrReverse Recovery Charge--0.55--µC(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。
FAIRCHILD FQP10N60C FQPF10N60C 数据手册
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQP10N60C/FQPF10N60CNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 14.2mH, I AS = 9.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 9.5A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperatureV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 4.75 A--0.60.73Ωg FSForward TransconductanceV DS = 40 V, I D = 4.75 A (Note 4)--8.0--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--15702040pF C oss Output Capacitance--166215pF C rssReverse Transfer Capacitance--1824pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 300 V, I D = 9.5A,R G = 25 Ω(Note 4, 5)--2355ns t r Turn-On Rise Time --69150ns t d(off)Turn-Off Delay Time --144300ns t f Turn-Off Fall Time --77165ns Q g Total Gate Charge V DS = 480 V, I D = 9.5A,V GS = 10 V(Note 4, 5)--4457nC Q gs Gate-Source Charge -- 6.7--nC Q gdGate-Drain Charge--18.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----9.5A I SM Maximum Pulsed Drain-Source Diode Forward Current----38A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9.5 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 9.5 A,dI F / dt = 100 A/µs (Note 4)--420--ns Q rrReverse Recovery Charge-- 4.2--µCFQP10N60C/FQPF10N60CDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
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V = 480V DS
8
6
4
2
Note : I = 7.4A D
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Capacitance [pF]
©2000 Fairchild Semiconductor International
--
--
1.4
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.4 A,
-- 320
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
2.4
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 57.6mH, IAS = 4.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD 7.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
300
Typ
Max
--
2.60
--
62.5
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °CW °CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF7N60
元器件交易网
VGS Top : 15.0 V
10.0 V
101
8.0 V 7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1 10-1
Notes : 1. 250s Pulse Test 2. TC = 25
100
101
V , Drain-Source Voltage [V] DS
Figure 1. On-Region Characteristics
2.5
2.0
V = 10V GS
V = 20V GS
1.5
1.0
0.5
0.0 0
Note : T = 25 J
5
10
15
20
25
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
--
30
70
ns
--
80 170
ns 5)
--
60 130
ns
VDS = 480 V, ID = 7.4 A,
--
29
38
nC
VGS = 10 V
--
7
--
nC
(Note 4, 5) --
14.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.3
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 17.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.3 A
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V] SD
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
V = 120V DS
10
V = 300V DS
Figure 5. Capacitance Characteristics
VGS , Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
101
100 10-1
2
150 25
-55
Notes : 1. V =50V
GD S
TO-220F
FQPF Series
D
!
"
!"
G!
" "
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
--
--
0.67
-----
--
--
10 100 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
©2000 Fairchild Semiconductor International
Rev. A, April 2000
元器件交易网
FQPF7N60
ID, Drain Current [A]
Typical Characteristics
DS(ON) R [ ], Drain-Source On-Resistance
DS
2. 250s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V] GS
Figure 2. Transfer Characteristics
101
100
10-1 0.2
150
25
Notes : 1. V =0V 2. 25G0S s Pulse Test
TL
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Rev. A, April 2000
元器件交易网
FQPF7N60
Typical Characteristics (Continued)
Drain-SoBurVcDeSSB,r (eaNkordomwalinzVeold)tage
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF7N60 600 4.3 2.7 17.2 ±30 580 4.3 4.8 4.5 48 0.38
-55 to +150
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
Features
• 4.3A, 600V, RDS(on) = 1.0Ω @VGS = 10 V • Low gate charge ( typical 29 nC) • Low Crss ( typical 16 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1100 1430 pF
-- 135 175
pF
--
16
21
pF
Switching Characteristics