LM833

LM833Dual Audio Operational AmplifierGeneral DescriptionThe LM833is a dual general purpose operational amplifier designed with particular emphasis on performance in audio systems.This dual amplifier IC utilizes new circuit and processing techniques to deliver low noise,high speed and wide band-width without increasing external components or decreasing stability.The LM833is internally compensated for all closed loop gains and is therefore optimized for all preamp and high level stages in PCM and HiFi systems.The LM833is pin-for-pin compatible with industry standard dual operational amplifiers.Featuresj Wide dynamic range:>140dBj Low input noisevoltage:4.5nV/√Hzj High slew rate:7V/µs (typ);5V/µs (min)j High gain bandwidth:15MHz (typ);10MHz (min)j Wide power bandwidth:120KHz j Low distortion:0.002%j Low offset voltage:0.3mV j Large phase margin:60˚j Available in 8pin MSOPpackageSchematic Diagram(1/2LM833)00521801January 2003LM833Dual Audio Operational Amplifier©2004National Semiconductor Corporation 查询LM833供应商Connection Diagram00521802Order Number LM833M,LM833MX,LM833N,LM833MM or LM833MMXSee NS Package Number M08A,N08E or MUA08AL M 833 2Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Supply VoltageV CC –V EE36VDifferential Input Voltage (Note 3)V I ±30V Input Voltage Range (Note 3)V IC ±15VPower Dissipation (Note 4)P D500mW Operating Temperature Range T OPR−40∼85˚C Storage Temperature Range T STG −60∼150˚CSoldering Information Dual-In-Line Package Soldering (10seconds)260˚CSmall Outline Package (SOIC and MSOP)Vapor Phase (60seconds)215˚C Infrared (15seconds)220˚C ESD tolerance (Note 5)1600VDC Electrical Characteristics(Notes 1,2)(T A =25˚C,V S =±15V)Symbol ParameterConditionsMin Typ Max Units V OS Input Offset Voltage R S =10Ω0.35mV I OS Input Offset Current 10200nA I B Input Bias Current 5001000nA A V Voltage Gain R L =2k Ω,V O =±10V 90110dB V OM Output Voltage Swing R L =10k Ω±12±13.5V R L =2k Ω±10±13.4V V CM Input Common-Mode Range ±12±14.0V CMRR Common-Mode Rejection Ratio V IN =±12V80100dB PSRR Power Supply Rejection Ratio V S =15∼5V,−15∼−5V 80100dBI QSupply CurrentV O =0V,Both Amps58mAAC Electrical Characteristics(T A =25˚C,V S =±15V,R L =2k Ω)Symbol ParameterConditions Min Typ MaxUnits SR Slew RateR L =2k Ω57V/µs GBWGain Bandwidth Productf =100kHz1015MHzDesign Electrical Characteristics(T A =25˚C,V S =±15V)The following parameters are not tested or guaranteed.Symbol ParameterConditionsTyp Units ∆V OS /∆T Average Temperature Coefficient 2µV/˚Cof Input Offset Voltage THD DistortionR L =2k Ω,f =20∼20kHz 0.002%V OUT =3Vrms,A V =1e n Input Referred Noise Voltage R S =100Ω,f =1kHz 4.5i n Input Referred Noise Current f =1kHz0.7PBW Power Bandwidth V O =27V pp ,R L =2k Ω,THD ≤1%120kHz f U Unity Gain Frequency Open Loop 9MHz φMPhase MarginOpen Loop 60deg Input Referred Cross Talkf =20∼20kHz−120dBLM8333Design Electrical Characteristics(Continued)Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits.This assumes that the device is within the Operating Ratings.Specifications are not guaranteed for parameters where no limit is given,however,the typical value is a good indication of device performance.Note 2:All voltages are measured with respect to the ground pin,unless otherwise specified.Note 3:If supply voltage is less than ±15V,it is equal to supply voltage.Note 4:This is the permissible value at T A ≤85˚C.Note 5:Human body model,1.5k Ωin series with 100pF.Typical Performance CharacteristicsMaximum Power Dissipationvs Ambient TemperatureInput Bias Current vs Ambient Temperature0052180400521805Input Bias Current vs Supply VoltageSupply Current vs Supply Voltage0052180600521807L M 833 4Typical Performance Characteristics(Continued)DC Voltage Gain vs Ambient TemperatureDC Voltage Gain vs Supply Voltage0052180800521809Voltage Gain &Phasevs Frequency Gain Bandwidth Product vs Ambient Temperature0052181000521811Gain Bandwidth vs Supply Voltage Slew Rate vsAmbient Temperature0052181200521813LM8335Typical Performance Characteristics(Continued)Slew Rate vs Supply VoltagePower Bandwidth0052181400521815CMR vs Frequency Distortion vs Frequency0052181900521820PSRR vs FrequencyMaximumOutput Voltage vs Supply Voltage0052181800521816L M 833 6Typical Performance Characteristics(Continued)MaximumOutput Voltage vsAmbient TemperatureSpot Noise Voltagevs Frequency0052181700521821Spot Noise Currentvs FrequencyInput Referred Noise Voltagevs Source Resistance0052182200521823Noninverting Amp Noninverting Amp0052182400521825LM8337Typical Performance Characteristics(Continued)Inverting Amp00521826Application HintsThe LM833is a high speed op amp with excellent phase margin and stability.Capacitive loads up to 50pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable.Capacitive loads greater than 50pF must be isolated from the output.The most straightforward way to do this is to puta resistor in series with the output.This resistor will also prevent excess power dissipation if the output is accidentally shorted.Noise Measurement Circuit00521827Complete shielding is required to prevent induced pick up from external sources.Always check with oscilloscope for power line noise.Total Gain:115dB @f =1kHzInput Referred Noise Voltage:e n =V0/560,000(V)L M 833 8RIAA Preamp Voltage Gain,RIAA Deviation vs Frequency Flat Amp Voltage Gain vsFrequency0052182800521829 Typical ApplicationsNAB PreampNAB Preamp Voltage Gainvs Frequency00521830A V=34.5F=1kHzE n=0.38µVA Weighted00521831 Balanced to Single Ended Converter Adder/Subtracter00521832 V O=V1–V200521833V O=V1+V2−V3−V4LM8339Typical Applications(Continued)Sine Wave Oscillator00521834Second Order High Pass Filter(Butterworth)Second Order Low Pass Filter(Butterworth)00521835Illustration is f0=1kHz00521836Illustration is f0=1kHzLM83310Typical Applications(Continued)State Variable Filter00521837Illustration is f 0=1kHz,Q =10,A BP =1AC/DC Converter005218382Channel Panning Circuit (Pan Pot)Line Driver0052183900521840LM83311Typical Applications(Continued)Tone Control00521841Illustration is:f L =32Hz,f LB =320Hz f H =11kHz,f HB =1.1kHz00521842RIAA Preamp00521803A v =35dB E n =0.33µV S/N =90dB f =1kHz A WeightedA Weighted,V IN =10mV @f =1kHzL M 833 12Typical Applications(Continued)Balanced Input Mic Amp00521843Illustration is:V0=101(V2−V1)LM83313Typical Applications(Continued)10Band Graphic Equalizer00521844fo(Hz)C 1C 2R 1R 2320.12µF 4.7µF 75k Ω500Ω640.056µF 3.3µF 68k Ω510Ω1250.033µF 1.5µF 62k Ω510Ω2500.015µF 0.82µF 68k Ω470Ω5008200pF 0.39µF 62k Ω470Ω1k 3900pF 0.22µF 68k Ω470Ω2k 2000pF 0.1µF 68k Ω470Ω4k 1100pF 0.056µF 62k Ω470Ω8k 510pF 0.022µF 68k Ω510Ω16k330pF0.012µF51k Ω510ΩNote 6:At volume of change =±12dB Q =1.7Reference:“AUDIO/RADIO HANDBOOK”,National Semiconductor,1980,Page 2–61L M 833 14Typical Applications(Continued)LM833MDC MWCDUAL AUDIO OPERATIONAL AMPLIFIER00521854Die Layout(A-Step)DIE/WAFER CHARACTERISTICSFabrication Attributes General Die InformationPhysical Die Identification LM833A Bond Pad Opening Size(min)110µm x110µm Die Step A Bond Pad Metalization ALUMINUM Physical Attributes Passivation VOM NITRIDE Wafer Diameter150mm Back Side Metal BARE BACK Dise Size(Drawn)1219µm x1270µm48mils x50milsBack Side Connection Floating Thickness406µm NominalMin Pitch288µm NominalSpecial Assembly Requirements:Note:Actual die size is rounded to the nearest micron.Die Bond Pad Coordinate Locations(A-Step)(Referenced to die center,coordinates inµm)NC=No ConnectionSIGNAL NAME PAD#NUMBER X/Y COORDINATES PAD SIZEX Y X YOUTPUT A1-476500110x110INPUT A-2-476-212110x110INPUT A+3-476-500110x110VEE-4-0-500110x110INPUT B+5476-500110x110INPUT B-6476-212110x110 OUTPUT B7476500110x110VCC+80500110x110LM83315Typical Applications(Continued)IN U.S.ATel #:1877Dial Die 187********Fax:12075416140IN EUROPE Tel:49(0)8141351492/1495Fax:49(0)8141351470IN ASIA PACIFIC Tel:(852)27371701IN JAPAN Tel:810432992308L M 833 16Physical Dimensionsinches (millimeters)unless otherwise notedMolded Small Outline Package (M)Order Number LM833M or LM833MXNS Package Number M08AMolded Dual-In-Line Package (N)Order Number LM833N NS Package Number N08ELM83317Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)8-Lead (0.118”Wide)Molded Mini Small Outline PackageOrder Number LM833MM or LM833MMXNS Package Number MUA08ANational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.For the most current product information visit us at .LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560L M 833D u a l A u d i o O p e r a t i o n a l A m p l i f i e r。