bf 1005s中文资料

Marking NZs 1=S
Pin Configuration 2=D 3 = G2 4 = G1
Package SOT-143
Unit V mA V mW °C
Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch
Value 8 25 10 3 200 -55 ... 150 150
Output capacitance C dss = f (V G2S) f = 200MHz
3.0
3.0
pF
pF
Cg1ss
2.0
Cdss
V
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5

0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20
mA
mW
16 14
P tot
200
ID
150 100 50 0 0 120 °C
12 10 8 6 4 2
20
40
60
80
100
150
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
TS
VG2S
Insertion power gain | S21 | 2 = f (VG2S )
5
Forward transfer admittance | Y 21 | = f (V G2S)
40
mS
dB
32
| S21 |2
-15
|Y21|
-25 -35 -45 -55 -65 0.0
V
28 24 20 16 12 8 4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
4.5
VG2S
VG2S
3
May-05-1999
BF 1005S
Gate 1 input capacitance Cg1ss = f (Vg2s) f = 200MHz
V
4.5
VG2S
VG2S
4
May-05-1999
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, TS 76 °C Storage temperature Channel temperature
2 May-05-1999
gfs Cg1ss Cdss Gps F800
40
30 2.4 1.3 19 1.6 50
2.7 -
mS pF
dB
Gps
BF 1005S
Total power dissipation Ptot = f (TS )
Drain current ID = f (VG2S)
300
Drain AGC HF Input G2 G1
1
VPS05178
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1005S
Maximum Ratings Parameter Drain-source voltage
BF 1005S
Electrical Characteristics at T A = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage I D = 650 µA, V G1S = 0 V, V G2S = 0 V Gate 1 - source breakdown voltage +I G1S = 10 mA, VG2S = 0 V, V DS = 0 V Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current VG1S = 6 V, V G2S = 0 V Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 V, V DS = 0 V Drain current VDS = 5 V, V G1S = 0 , V G2S = 4.5 V Operating current (selfbiased) VDS = 5 V, V G2S = 4.5 V Gate 2-source pinch-off voltage VDS = 5 V, ID = 100 µA VG2S(p) 1 I DSS I DSO 13 800 ±I G2SS 50 +I G1SS 100 ±V (BR)G2SS 8 13 +V (BR)G1SS 8 12 V(BR)DS 12 typ. max.
Unit
V
µA nA µA mA V
AC characteristics Forward transconductance (self biased) VDS = 5 V, VG2S = 4.5 V Gate 1-input capacitance (self biased) VDS = 5 V, VG2S = 4 V, f = 1 MHz Output capacitance (self biased) VDS = 5 V, VG2S = 4 V, f = 100 MHz Power gain (self biased) VDS = 5 V, VG2S = 4 V, f = 800 MHz Noise figure (self biased) VDS = 5 V, VG2S = 4 V, f = 800 MHz Gain control range (self biased) VDS = 5 V, VG2S = 4 ... 0V, f = 800 MHz
BF 1005S
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
3 4 2
HF Output + DC
input stages up to 1GHz
Operating voltage 5V Integrated stabilized bias network
Thermal Resistance Channel - soldering point Rthchs
370
K/W
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1
May-05-1999