WMF2M8-150LI5中文资料

CI/O VI/O = 0 V, f = 1.0MHz
This parameter is guaranteed by design but not tested.
Max Unit 12 pF 12 pF 12 pF 12 pF 12 pF
RECOMMENDED DC OPERATING CONDITIONS
May 2004 Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 •
元器件交易网
White Electronic Designs
WMF2M8-XXX5
ABSOLUTE MAXIMUM RATINGS
Parameter
Write Cycle Time Chip Select Setup Time Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High Duration of Byte Programming Operation (1) Sector Erase (2) Read Recovery Time before Write VCC Setup Time Chip Programming Time Chip Erase Time (3) Output Enable Hold Time (4) RESET# Pulse Width
Symbol
tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tGHWL tVCS
tWC tCS tWP tAS tDS tDH tAH tWPH
tOEH tRP
-90
-120
-150
Unit
Min Max Min Max Min Max
56 NC 55 RESET# 54 A11 53 A10 52 A9 51 A1 50 A2 49 A3 48 A4 47 A5 46 A6 45 A7 44 GND 43 A8 42 VCC 41 NC 40 I/O1 39 NC 38 I/O0 37 A0 36 NC 35 NC 34 NC 33 I/O2 32 NC 31 I/O3 30 NC 29 GND
90
120
150
ns
0
0
0
ns
45
50
50
ns
0
0
0
ns
45
50
50
ns
0
0
0
ns
45
50
50
ns
20
20
20
ns
300
300
300
µs
15
15
15
sec
0
0
0
µs
50
50
50
µs
44
44
44
sec
256
256
256
sec
10
10
10
ns
500
500
500
ns
NOTES: 1. Typical value for tWHWH1 is 7µs. 2. Typical value for tWHWH2 is 1sec. 3. Typical value for Chip Erase Time is 32sec. 4. For Toggle and Data Polling.
34 NC 33 NC 32 A20 31 WE# 30 OE# 29 RY/BY#
18 19 20 21 22 23 24 25 26 27 28
I/O0 I/O1 I/O2 I/O3 GND GND VCC I/O4 I/O5 I/O6 I/O7
** Package to be developed.
Parameter
Symbol Min Typ Max Unit
Supply Voltage
VCC 4.5 5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH 2.0 - VCC + 0.5 V
Input Low Voltage
VIL -0.5 -
+0.8
V
Operating Temperature (Mil.) TA -55 -
+125 °C
Operating Temperature (Ind.) TA -40 -
+85 °C
DC CHARACTERISTICS — CMOS COMPATIBLE VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol Conditions
Pin Description
I/O0-7 A0-20 WE# CS# OE# VCC GND RY/BY# RESET#
Data Inputs/Outputs Address Inputs Write Enable Chip Select Output Enable Power Supply Ground Ready/Busy Reset
(Package 207). Fits standard 56 SSOP footprint. • 44 pin Ceramic LCC** Sector Architecture • 32 equal size sectors of 64KBytes each • Any combination of sectors can be erased. Also
Low Power CMOS Data# Polling and Toggle Bit feature for detection of program or erase cycle completion. Supports reading or programming data to a sector not being erased. RESET# pin resets internal state machine to the read mode. Multiple Ground Pins for Low Noise Operation
ICC1 CS# = VIL, OE# = VIH, f Current for Program or Erase (2)
ICC2 CS# = VIL, OE# = VIH
60
mA
VCC Standby Current
ICC3 VCC = 5.5, CS# = VIH, f = 5MHz, RESET# = Vcc ± 0.3V
supports full chip erase. 100,000 Write/Erase Cycles Minimum Organized as 2Mx8 Commercial, Industrial, and Military Temperature Ranges 5V Read and Write. 5V ± 10% Supply.
Symbol Ratings Unit
VT -2.0 to +7.0 V
PT
8
W
TSTG -65 to +125 °C
IOS
100
mA
100,000 min cycles
20 years
CAPACITANCE TA = +25°C
Parameter
Symbol
Conditions
Address Input capacitance CAD VI/O = 0 V, f = 1.0MHz
元器件交易网
White Electronic Designs
WMF2M8-XXX5
2Mx8 MONOLITHIC FLASH, SMD 5962-97609
FEATURES
Access Times of 90, 120, 150ns Packaging: • 56 lead, Hermetic Ceramic, 0.520" CSOP
44 CLCC** Top View
A8 A9 A10 A11 RESET# VCC CS# A12 A13 A14 A15
6 5 4 3 2 1 44 43 42 41 40
A7 7 A6 8 A5 9 A4 10 NC 11
39 A16 38 A17 37 A18 36 A19 35 NC
NC 12 NC 13 A3 14 A2 15 A1 16 A0 17
Fig. 1 – Pin Configuration for WMF2M8-XXX5
56 CSOP Top View
CS# 1 A12 2 A13 3 A14 4 A15 5 NC 6 NC 7 NC 8 A20 9 A19 10 A18 11 A17 12 A16 13 VCC 14 GND 15 I/O6 16 NC 17 I/O7 18 NC 19 RY/BY# 20 OE# 21 WE# 22 NC 23 NC 24 I/O5 25 NC 26 I/O4 27 VCC 28
AC CHARACTERISTICS – READ-ONLY OPERATIONS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
* This data sheet describes a product that is subject to change without notice.
** Package to be developed. Note: For programming information refer to Flash Programming 16M5 Application Note.