HO2_214W10_Intro
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
EE314
EE114 —
EE214 —
EE314 —RF Integrated Circuit Design
EE315A —VLSI
Fundamentals of Analog Integrated Circuit Design
Advanced Analog Integrated Circuit
Design
Signal Conditioning Circuits EE315B VLSI EE315B —VLSI Data Conversion
Circuits
EE 114
Bandwidth
Power Dissipation
EE 214
Electronic Noise
Electronic Noise Distortion
Signal-to-Noise Ratio 22
signal signal V V P SNR ∝
=
g
noise
noise
P Example: Noisy image
/~htakeda/kernelreg/kernelreg.htm p g g
v o
v i
Small-signal approximation
For a single tone input, the nonlinear terms in a circuit’s transfer function primarily result in signal harmonics
For a two-tone input, the nonlinear terms in a circuit’s transfer function result in so-called “intermodulation products”
lt i ll d“i t d l ti d t”
Example: Two interferer tones create an
intermodulation product that corrupts the
signal in a desired (radio-) channel
MOSFET Bipolar Junction Transistor (BJT) EE114
Die Photo of 40Gb/s CDR Circuit *
•120-GHz f T/ 100GHz f max
0.18μm SiGe BiCMOS
m SiGe BiCMOS
•144 pins
• 3.5mm x 4.2mm
•+1.8V and –5.2V supplies
•7.5W power dissipation
* A. Ong, et al., ISSCC 2003
*A O t l ISSCC2003
Radar Sensor
Ragonese et al., ISSCC 2009
R t l ISSCC2009
In modern CMOS
technology, millions of
logic gates can be
l i t b
integrated on a chip
–Together with
moderate to high
moderate-to high
performance analog
blocks
Mehta et al., "A 1.9GHz Single-Chip
CMOS PHS Cellphone," ISSCC 2006.
Strained Si, Ge, SiGe, III-V
Transport-enhanced FET
Molecular devices
B Vdd
A Out
A isolation
buried oxide
Silicon Substrate
Spintronics
Self-assembled device fabrication B
Gnd
Nanodevice
array
isolation
3D, heterogeneous i t ti
device fabrication
buried oxide
Multi-Gate / FinFET
Gate
Nanowire
integration cascade
Source Drain
Time Embedded memory
Ferromagnetic domain wall
[Prof. P . Wong]
Time
Two-port analysis nicely captures a number of practical scenarios in which the forward amplifier (“a”) and feedback network (“f”) can be intuitively identified and separated (while maintaining loading effects) –Shunt-shunt, shunt-series, series-shunt, series-series configurations Example:
Shunt series feedback circuit
Shunt-series feedback circuit
B. Murmann EE214 Winter 2009-1021 Valuable for stability analysis and frequency compensation。