4N60F PDF规格书

Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths)
ID% Normalised Current Derating
with heatsink compound
Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
ID, Drain current (Amps) Tj = 25 C 7V PHP3N60 10 V 6V 5.5 V 5V VGS = 4.5 V
120 110 100 90 80 70 60 50 40 30 20 10 0
12 10 8 6 4 2 0
0
20
40
60
80 Ths / C
100
120
140
0
5
10 15 20 25 VDS, Drain-Source voltage (Volts)
30
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
φ
3.
18
2.54 ±0.20 0.70 ±0.20
15.87 ±0.20
3.30 ±0.20
12.42 ±0.20
6.68 ±0.20
2.76 ±0.20
9.75 ±0.20
1.47max
D
0.50 ±0.20
1
2.54typ 2.54typ
2 3
0.80 ±0.20
G
S
■ Absolute Maximum Ratings Ta = 25℃
4N60F N-Channel MOSFET
■ Typical Characterisitics
12 10 8 6 4 Tj = 150 C 2 0 Tj = 25 C 0 2 4 6 VGS, Gate-Source voltage (Volts) 8 10
0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 1
1000
Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.25 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Repetitive and Non-Repetitive Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy Repetitive Avalanche Energy Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Ta=25℃ Ta=100℃ Symbol VDS VDG VGS ID IDM IAS,IAR PD EAS EAR RthJA RthJC TJ Tstg Rating 600 600 ±30 2.4 1.5 18 4.5 35 295 9 55 3.6 150 -55 to 150 W mJ ℃/W A V Unit
PHP3N60
15
10 150 C
5
Tj = 25 C
5
0
0
4N60F N-Channel MOSFET
■ Typical Characterisitics
120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140
0.001 1us 10us 0.01 single pulse T 1ms 100us 10ms tp, pulse width (s) 0.1
PD%
Normalised Power Derating
with heatsink compound
10
Zth j-hs, Transient thermal impedance (K/W) D = 0.5
PHX2N60
1 0.2 0.1 0.05 0.02
P D
tp
t D= p T t 100ms 1s
4N60F N-Channel MOSFET
■ Typical Characterisitics
15 VGS, Gate-Source voltage (Volts) ID = 4.5 A Tj = 25 C 240 V 10 120 V VDD = 480 V PHP3N60
20
IF, Source-Drain diode current (Amps) VGS = 0 V
℃
4N60F N-Channel MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Internal drain inductance Internal source inductance Capacitance from T2 to external heatsink R.M.S. isolation voltage from all three terminals to external heatsink Maximum Body-Diode Continuous Current Pulsed source current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr Qrr Ld LS Cisol Visol IS ISM VSD IS=4.5A,VGS=0V IF= 4.5A, dI/dt= 100A/μs,VGS=0 Measured from drain lead to centre of die Measured from source lead to source bond pad f=1MHz f = 50-60 Hz; sinusoidal waveform;R.H≤65% ; clean and dustfree VGS=10V, VDS=300V, RL=68Ω,RG=12Ω VGS=10V, VDS=480V, ID=4.5A VGS=0V, VDS=25V, f=1MHz Test Conditions ID=250μA, VGS=0V VDS=600V, VGS=0V VDS=480V, VGS=0V, TJ=125℃ VDS=0V, VGS=±30V VDS=VGS , ID=250μA VGS=10V, ID=2.25A VDS=30V, ID=2.25A 2 2 Min 600 2 50 10 3 2.1 3.4 600 80 46 48 4 24 12 33 82 36 480 4 4.5 7.5 10 2500 4.5 18 1.2 nC nH pF V A V ns 60 6 30 nC pF 100 500 200 4 2.5 Typ Max Unit V μA nA V Ω S
ID, Drain current (Amps) PHX2N60
Fig.5. Typical output characteristics. ID = f(VDS); parameter VGS
RDS(on), Drain-Source on resistance (Ohms) 4.5 V VGS = 5 V 5.5 V PHP3N60 Tj = 25 C
100
6 5
10
RD
1
S(
O
= N)
VD
S
/ID
tp = 10 us 100 us 1 ms
4 6V 3 2 1 10 V
DC 0.1
10 ms 100 ms
0.01
1
10 100 1000 VDS, Drain-source voltage (Volts)
10000
0
0
2
4 6 8 ID, Drain current (Amps)
10
12
Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance. RDS(ON) = f(ID); parameter VGS
1E-04
2 1 0
1E-05
0
2
4 6 ID, Drain curre1E-06
0
1
2 VGS / V
3
4
Fig.8. Typical transconductance. gfs = f(ID); parameter Tj
a
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
4n60fpdf规格书帮助4n60f规格书pdfpdf产品规格书技术规格书
4N60F N-Channel MOSFET
TO-220F
±0.20
±0.20
Unit: mm
0 .2 ±0
■ Features
● VDS (V) = 600V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) ＜ 2.5Ω (VGS = 10V)
ID, Drain current (Amps) VDS > ID x RDS(on)max
PHP3N60
4
VGS(TO) / V max.
3
typ.
2
min.
Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj
gfs, Transconductance (S) VDS > ID x RDS(on)max PHP3N60
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
ID / A SUB-THRESHOLD CONDUCTION
6 5 4 3
1E-01
1E-02
Tj = 25 C 150 C
1E-03 2% typ 98 %
Junction capacitances (pF) Ciss PHP3N60
Normalised RDS(ON) = f(Tj)
1000
2
100
1
Coss Crss
0
-60
-40
-20
0
20
40 60 Tj / C
80
100 120 140
10
1
10 100 VDS, Drain-Source voltage (Volts)