2N2857JV资料
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TC = 25°C unless otherwise specified
Rating 15 30 3 40 200 1.14 300 1.71 -65 to +200 -65 t mW mW/°C mW mW/°C °C °C
Copyright 2002 Rev. F
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min 30 10
Typ
Max 150
Units
1.0 0.4
Volts Volts
Min 10 50
Typ
Max 21 220 1
Units
pF ps MHz dB
4 12.5
15 21 4.5
Copyright 2002 Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
2N2857
Silicon NPN Transistor
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
2N2857
Silicon NPN Transistor
Data Sheet
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2857J) • JANTX level (2N2857JX) • JANTXV level (2N2857JV) • JANS level (2N2857JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request
Benefits
Please contact Semicoa for special configurations or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO3 ICBO2 ICES IEBO1 Test Conditions IC = 3 mA VCB = 15 Volts VCB = 30 Volts VCB = 15 Volts, TA = 150°C VCE = 16 Volts VEB = 3 Volts Min 15 10 1 1 100 10 Typ Max Units Volts nA µA µA nA µA
On Characteristics Parameter DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector to Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Symbol |hFE| hFE CCB rb’CC Gpe F Test Conditions VCE = 6 Volts, IC = 5 mA, f = 100 MHz VCE = 6 Volts, IC = 2 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 Ω Symbol hFE1 hFE2 VBEsat VCEsat Test Conditions IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA
Applications
• Ultra-High frequency transistor • Low power • NPN silicon transistor
Features
• • • • Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343
Rating 15 30 3 40 200 1.14 300 1.71 -65 to +200 -65 t mW mW/°C mW mW/°C °C °C
Copyright 2002 Rev. F
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min 30 10
Typ
Max 150
Units
1.0 0.4
Volts Volts
Min 10 50
Typ
Max 21 220 1
Units
pF ps MHz dB
4 12.5
15 21 4.5
Copyright 2002 Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
2N2857
Silicon NPN Transistor
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
2N2857
Silicon NPN Transistor
Data Sheet
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2857J) • JANTX level (2N2857JX) • JANTXV level (2N2857JV) • JANS level (2N2857JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request
Benefits
Please contact Semicoa for special configurations or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT TJ TSTG • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO3 ICBO2 ICES IEBO1 Test Conditions IC = 3 mA VCB = 15 Volts VCB = 30 Volts VCB = 15 Volts, TA = 150°C VCE = 16 Volts VEB = 3 Volts Min 15 10 1 1 100 10 Typ Max Units Volts nA µA µA nA µA
On Characteristics Parameter DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Collector to Base Feedback Capacitance Collector Base time constant Small Signal Power Gain Noise Figure Symbol |hFE| hFE CCB rb’CC Gpe F Test Conditions VCE = 6 Volts, IC = 5 mA, f = 100 MHz VCE = 6 Volts, IC = 2 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCB = 6 Volts, IE = 2 mA, f = 31.9 MHz VCE = 6 Volts, IE = 1.5 mA, f = 450 MHz VCE = 6 Volts, IC = 1.5 mA, f < 450 MHz, Rg = 50 Ω Symbol hFE1 hFE2 VBEsat VCEsat Test Conditions IC = 3 mA, VCE = 1 Volts IC = 3 mA, VCE = 1 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA
Applications
• Ultra-High frequency transistor • Low power • NPN silicon transistor
Features
• • • • Hermetically sealed TO-72 metal can Also available in chip configuration Chip geometry 0011 Reference document: MIL-PRF-19500/343