TIC201资料

TIC201 SERIES SILICON TRIACS
2
JANUARY 1977 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
† All voltages are with respect to Main T erminal 1.
NOTES:6.This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7.The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 Ω, t p(g) = 20 µs, t r = ≤ 15 ns, f = 1 kHz.
V TM Peak on-state voltage I TM = ±3.5 A I G = 50 mA (see Note 6)±1.9V I H Holding current V supply = +12 V†V supply = -12 V†I G = 0I G = 0Init’ I TM = 100 mA Init’ I TM = - 100 mA
30-30mA I L Latching current V supply = +12 V†V supply = -12 V†(see Note 7)40-40
mA dv/dt Critical rate of rise of off-state voltage V DRM = Rated V DRM I G = 0T C = 110°C ±50
V/µs dv/dt (c)
Critical rise of commutation voltage
V DRM = Rated V DRM
I TRM = ±3.5 A
T C = 85°C
±2
V/µs
thermal characteristics
PARAMETER
MIN
TYP
MAX UNIT R θJC Junction to case thermal resistance 10°C/W R θJA
Junction to free air thermal resistance
62.5
°C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS MIN
TYP
MAX UNIT
3
TIC201 SERIES SILICON TRIACS
4
JANUARY 1977 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
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PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.
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