MEMORY存储芯片MT49H64M9HT-33中文规格书
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Table 49: Command Truth Table (Continued)
Notes: 1.All commands are defined by the current state of CS#, CA0, CA1, CA2, CA3, and CKE at
the rising edge of the clock.
2.Bank addresses (BA) determine which bank will be operated upon.
3.AP HIGH during a READ or WRITE command indicates that an auto precharge will occur to the bank associated with the READ or WRITE command.
4.X indicates a “Don’t Care” state, with a defined logic level, either HIGH (H) or LOW (L).
5.Self refresh exit and DPD exit are asynchronous.
6.V REF must be between 0 and V DDQ during self refresh and DPD operation.
7.CAxr refers to command/address bit “x” on the rising edge of clock.
8.CAxf refers to command/address bit “x” on the falling edge of clock.
9.CS# and CKE are sampled on the rising edge of the clock.
10.Per-bank refresh is only supported in devices with eight banks.
11.The least-significant column address C0 is not transmitted on the CA bus, and is inferred
to be zero.
Table 50: CKE Truth Table
1Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Truth Tables
supplies (including V REF ) must be within the specified limits prior to exiting DPD (see AC and DC Operating Conditions).
To exit DPD, CKE must be HIGH, t ISCKE must be complete, and the clock must be sta-ble. To resume operation, the device must be fully reinitialized using the power-up initi-alization sequence.
Figure 63: Deep Power-Down Entry and Exit Timing
CK/CK#
CKE CS#
CMD Don’t Care
Notes: 1.The initialization sequence can start at any time after Tx + 1.
2.t INIT3 and Tx + 1 refer to timings in the initialization sequence. For details, see Mode Register Definition.
Input Clock Frequency Changes and Stop Events
Input Clock Frequency Changes and Clock Stop with CKE LOW
During CKE LOW, Mobile LPDDR2 devices support input clock frequency changes and clock stop under the following conditions:
•Refresh requirements are met
•Only REFab or REFpb commands can be in process
•Any ACTIVATE or PRECHARGE commands have completed prior to changing the fre-quency
•Related timing conditions,t RCD and t RP , have been met prior to changing the fre-quency
•The initial clock frequency must be maintained for a minimum of two clock cycles af-ter CKE goes LOW
•The clock satisfies t CH(abs) and t CL(abs) for a minimum of two clock cycles prior to CKE going HIGH
For input clock frequency changes, t CK(MIN) and t CK(MAX) must be met for each clock cycle.
After the input clock frequency is changed and CKE is held HIGH, additional MRW commands may be required to set the WR, RL, etc. These settings may require adjust-ment to meet minimum timing requirements at the target clock frequency.
1Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Input Clock Frequency Changes and Stop Events
Figure 56: WRITE to Power-Down Entry
BL = 4
Note: 1.CKE can be registered LOW at (WL + 1 + BL/2 + RU(t WR/t CK)) clock cycles after the clock
on which the WRITE command is registered.
1Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Power-Down。