BAL99-G中文资料
ASTM美国材料实验协会AB类标准大全
ASTM A999/A999M-04A合金和不锈钢管通用要求规格
ASTM A1007-07钢丝绳用碳素钢丝规格
ASTM A325-07经热处理最小抗拉强度为830Mpa的热处理钢结构螺栓
ASTM A938-07钢丝扭转试验的试验方法?
ASTM美国材料实验协会A类标准大全?
ASTM是美国材料实验协会(American Society of Testing Materials)所制定的相关标准。
其中A类标准有:
ASTM A918-06要求标出每个表面镀层质量的用途用电解镀锌-镍合金钢板规格
ASTM A920/A920M-02A具有机械特性的微合金热锻特种钢棒规格
ASTM B154-05铜和铜合金硝酸亚汞试验的试验方法
ASTM B159/B159M-05磷青铜丝技术规范
ASTM B16/B16M-05制螺钉机用易切削黄铜条材、棒材和型材
ASTM B160-05??镍线材和棒材规格
ASTM B161-05镍无缝管规格
ASTM B162-99(2005)??镍中厚板、薄板和带材规格
ASTM B136-84(2003)铝表面阳极镀层耐蚀性的测定方法
ASTM B137-95(2004)测量阳极镀铝层每单位重量的试验方法
ASTM B138/B138M-06锰青铜线材、棒材和型材规格
ASTM B139/B139M-07磷青铜线材、棒材和型材规格
ASTM B140/B140M-07铜锌铅(红铜或硬青铜)线材、棒材和型材规格
ASTM A989/A989M-05??高温设备用热等静压合金钢法兰、配件、阀门和部件规格
化工原料中英文对照词汇表
化工原料中英文对照词汇表尿素Urea草酸 Oxalic Acid甘油 glycer ine氯化镁 Magnes ium Chlori de氢氧化钾 Potass ium Hydrox ide冰醋酸 ACETIC ACID, GLACIA L三氯乙烯 TRICHL OROET HYLEN E6-溴-2-羟基萘 6-Bromo-2-hydrox ynaph thale ne2,6-二甲氧基萘2,6-Dimeth oxyna phtha lene2,6-二羟基萘 2,6-Dihydr oxyna phtha lene6-甲氧基-2-羟基萘 6-Methox y-2-hydrox y naphth alene 2-叔丁基-4-甲基苯酚 2-Tertia ry-butyl-4-methyl pheno l 炉甘石 Calami ne5-溴-2-甲基嘧啶 5-Bromo-2-methyl pyridi ne二氯甲烷 METHYL ENE CHLORI DE六缩氨酸乙酸酯 acetyl hexape ptide-3邻苯二甲酸二异丁酯 Diisob utylPhthal ate单硬脂酸甘油酯 Glycer yl Monost earat e艾地苯醌 Ideben one百灭宁 Permet hrin制霉菌素 Nystat in细胞色素CCytoch romeC二甲基对甲苯胺 Dimeth yl-p-toluid ine十八烷基酰氯 Octade cyl chlori de氨基葡萄糖硫酸钾 Glucos amine Sulfat e Potass ium三偏磷酸钠Sodium Trimet aphos phate4-溴苯酚 4-bromop henol安息香酸 benzoi c acid大豆脂肪酸soya fattyacid二环戊二烯Dicycl opent adien e固体石蜡 PARAFF IN W AX疏松石蜡 RESIDU E WAX残余蜡 RESIDU E WAX橡胶加工油RUBBER PROCES S OIL丁基橡胶 BUTYLRUBBER乙酰乙酸甲酯 Methyl acetoa cetat e磷酸三苯脂Triphe nyl Phosph ate三氟乙酸乙酯 Triflu oroac eticAcid EthylEster七水硫酸亚铁 FERROU S SULFAT E HEPTAH YDRAT E 硬脂酸钙 Calciu m steara te3-氨基巴豆酸甲酯 METHYL-3-AMINOCROTON A TE 亚硫酰二氯Thiony l Chlori de乙二醛-双(2-羟基缩苯胺) Glyoxa l bis (2-hydrox yanil)氧化镍黑 NICKEL OXIDEblack硅酸钠 Sodium Metasi licat e水合肼 Hydraz ine Hydrat eN-月桂酰肌氨酸钠 Sodium Lauroy l Sarcos inate二水目酸钠Sodium Molybd ate Dihydr ate二甲基二硫代氨基甲酸钠 Sodium Dimeth yl Dithio Carbam ateN,N-二(3-氨丙基)甲胺 N,N-Bis(3-aminop ropyl)methyl amine二甲基环己胺 Dimeth yl cycloh exylamine三乙二胺 trieth lenediamin e松香 Gum rosin维生素C Vitami n C磷酸 Phosph oricAcid六偏磷酸钠Sodium Hexa Meta Phosph ate硝酸 Nitric Acid(R)-(-)-噻唑啉-4-羧酸 (R)-(-)-THIAZO LIDIN E-4-CARBOX YLICACID 二氯甲烷 Methyl ene Chlori de丙烯酸丁酯Butylacryla te5α-雄烯二醇环戊丙酸酯 5-alphaAndros tened iol Cypion ate硼酸 BoricAcid氯化铁 FERRIC CHLORI DE六偏磷酸钠Sodium Hexame taPho sphat e焦磷酸四钠Tetras odium Pyroph ospha te磷酸二氢钠Monoso diumPhosph ate阿维菌素 abamec tin伊维菌素 Iverme ctin聚乙二醇600 Polyet hylen e Glycol-6002-氯乙醇 2-Chloro ethan ol克他命盐酸Ketami ne HCL氨己烯酸 Vigaba trin硫酸庆大霉素 GENTAM ICINSULPHA TE 苯芴醇 LUMEFA NTRIN E重质苏打灰densesoda ash一乙醇胺 Mono Ethano l Amine邻苯二甲酸二丁酯 Di ButylPhthal ate液体无水氨Liquid Anhydr ous Ammoni a 碳酸氢铵 AMMONI UM BICARB ONATE 硫脲Thio Urea甲氧普烯 methop rene葵子麝香 musk ambret te麝香酮 musk ketone甲基柏木醚methyl cedryl ether二戊烯 dipent ene二苯醚 DIPHEN YL OXIDE喹啉-6-羧酸 QUINOL INE-6-CARBOX YLICACID重铬酸钠 Sodium Bichro mate四苯基溴化磷 Tetrap henyl phosp honiu m Bromid e2-甲基-5-硝基酚 2-methyl-5-nitrop henol钼酸钠 Sodium Molybd ate甲苯 Toluen e三磷酸钠 Sodium Tripol yphos phate碳化钙 Calciu m Carbid e表氯醇 Epichl orohy dine水合肼 Hydraz ine Hydrat eP-甲酚 p-CresolP- 3-氨基对甲苯甲醚 P - CRESID INE过(二)硫酸系列 Persul fates Series锌粉ZINC DUST二甲基二硫代氨基甲酸钠 Sodium Dimeth yl Dithio Carbam ate 二水钼酸钠Sodium Molybd ate Dihydr ate2-溴戊酮 2-Bromop entan e苏打灰 SODA ASH LIGHT99.2%磷酸氯代对苯二酚 CHLORQ UINEPHOSPH A TE.乙酸锰 mangan ese acetat e4-叔丁基-儿茶酚 4-tert-Butylc atech ol酶 enzyme氧化钴 Cobalt Oxide草酸 Oxalic Acid2-甲基-5-甲氧苯并唑2-methyl-5-methox y benzox azole三磷酸钠 Tri sodium Phosph ate电缆用聚氯乙烯树脂 PVC RESINS FOR CABLEMANUFA CTURI NG 2,4-二硝基-6-溴苯胺 2,4 dinitr o 6 bromoanilin e蚁酸&氢氟酸 Formic acid & Hydrof luori c acidFerric acid & Iron oxide二硫化碳 CARBON DISULP HIDE灭滴灵 Metron idazo le柠檬酸 Citric Acid硝酸钙 calciu m nitrat e癸二酸 Sebaci c Acid冰醋酸 glacia l acetic acid维生素C磷酸镁 Magnes ium Ascorb yl Phosph ate对苯二酚 Hydroq uinon e环丙沙星盐酸 CIPROF LOXAC IN HCL氢氧化钠 Sodium Hydrox ide吗菌灵醋酸盐 dodemo rph acetat e烯酰吗啉 dimeth omorp h百菌清 Chloro thalo nil尼索朗 hexyth iazox哒螨灵 pyrida ben葡萄糖酸-δ-内酯 glucon o deltalacton e硫酸粘杆菌素 colist ine sulfat e恩诺沙星 Enrofl oxaci n Base土霉素盐酸OxyTet raCyc lineHCl黄磷 Yellow Phosph orus索布瑞醇 Sobrer ol焦棓酸 PYROGA LLOL硫乙醇酸 THIOGL YCOLL IC ACID茴香硫醚 THIOAN ISOLE1-溴-3-氯丙烷 1-BROMO-3-CHLORO PROPA NE 氟苯 FLUORO BENZE N叔丁基胺 tert-butyla mine丙烯酸树脂Acryli c resin顺铂 Cispla tin卡铂 Carbop latin依托泊苷 Etopos ide食用乳糖 EDIBLE LACTOS E十六烷醇 cetylalcoho l甘油 Glycer ine过硫酸铵 ammoni um persul fate三聚磷酸钠Sodium tripol yphos phate氧化镁 Magnes ium oxide97%硅酸乙酯 Ethylsilica te 40青蒿琥酯 Artesu nate磷酸三钠 triSod ium Phosph ate对苯二酚 hydroq uinon e月桂醇硫酸钠 sldium lauryl sulfat e对羟基苯甲酸 para hydrox y benzoi c acid乙酰基六角缩氨酸-3 Acetyl Hexape ptide-3双氰胺 Dicyan diami de二氯异氰尿酸钠 SODIUM DICHLO RO ISO CYANUR A TE 氯霉素棕榈酸酯 CHLORA MPHEN ICOLPALMIT A TE三硬脂酸铝Alumin ium Triste arate Micron izedsteril e维生素B6VITAMI N B6磺胺胍 Sulfag uanid ine松香树脂 Gum Rosin苯甲酸钠 SODIUM BENZOA TE双氧水 Hydrog en Peroxi de6-氨基己烷-1-醇 6-aminoh exan-1-ol邻苯二甲酸酐 Phthal ic Anhydr ide2,3-二氨基甲苯2,3-diamin o toluen e吲哚 indole2-甲基吲哚 2-methyl indole三苯基硼tri phe nyl borane松油精 Dipent ine十六烷醇 CetylAlcoho l呋喃-2-硼酸 FURAN-2-BORONI C ACID莫匹罗星 Mupiro cin高锰酸钾 Potass ium Perman ganat e噻苯咪唑 Thiabe ndazo le2-amino-2-(hydrox y methyl)-1,3,propan e diol二环戊二烯Dicycl opent adien e (DCPD)金红石型氧化钛 Titani um Dioxid e (Rutile) Top grade硼酸 boricacid氧化铅 Lead Oxide邻苯二甲酸酐 Phthal ic Anhydr ide叔丁基锡烷tribut yl stanna ne碳黑 Carbon BlackElftex 430碳黑 Carbon BlackN300碳黑 Carbon BlackN-326磷酸 PHOSPH ORICACID硝酸铅LEAD NITRAT E硬脂酸铅 LEAD STEARA TE次硫酸钠 Sodium Hydros ulfit e磷酸二氢铵Ammoni um Dihydr ogenPhosph ate水合肼 Hydraz ine Hydrat e甲氧萘丙酸naprox en扑热息痛 parace tamol干酪素 casein food grade柠檬酸 citric acid黄磷 YELLOW PHOSOP HORUS硫代硫酸钠Sodium Thiosu lfate玉嘧磺隆 rimsul furon 25%硝酸钙 Calciu m nitrat e硫酸钾 Potass ium sulpha te磺胺地索辛钠 sulfad imeth oxine sodium氯化钠 Sodium Chlori de藻酸钠 sodium algina te烯丙酰氯 Acrylo yl Chlori de柠檬铬黄 Lemonchrome yellow三聚磷酸钠Sodium Tri Poly Phosph ate磷酸酯 SULPHO SUCCI NIC ACID ESTER轻质苏打灰SODA ASH ( LIGHT)间氯苯胺 m-chloro anilin e马来酐 Maleic Anhydr ide氰基胍 Dicyan diami de头孢他啶 Ceftaz idime头孢曲松 Ceftri axone二硫化钼 molybd enium disulf ide三氯乙酸 TRICHL OROAC ETICACID CRYSTA L 癸二酸 sebaci c acid尿素urea诺氟沙星 Norflo xacin噻吩草胺-P Dimeth enami d-P三聚磷酸钠Sodium Tripol yphos phate氧化铁黄 iron oxideyellow氧化铁红 iron oxidered1,1,1-三氯乙烷 1,1,1-Trichl oroEt hane氯化铵 Ammoni um Chlori de苯酚 PHENOL甲氧苄氨嘧啶 TRIMET HOPRI M磷酸三钙 trical ciumphosph ate酒石酸苯甲曲秦 Phendi metra zineTartra te碳酸氢钠 sodium bicarb onate氯四环素盐酸 Chlort etrac yclin e HCl三水合氨卡青霉素 Ampici llinTrihyd ratemicron ized山梨糖醇 Sorbit ol Powder一水葡萄糖Dextro se Monohy drate碳化钙 calciu m carbid e柚皮甙 Naring in叶绿素铜钠盐 sodium copper苏打灰soda ash酒石酸盐 tartra te铬酸铵 AMMONI UM CHROMA TE苦味酸 PICRIC ACID甲酸铵 AMMONI UM FORMAT E聚丙烯薄膜PP SHEETFOR OPP TAPE氨基乙酸 Glycin e氨比西林 AMPICI LINE土霉素盐酸Oxytet racyc lineHCL1,2,3-氢硫基四唑唑 1,2,3-Mercap totet razol e5或6硝基苯甲酸咪唑5 or 6 Nitrob enzoimidaz ole甲基苯并三唑 Methyl benzo triaz ole邻苯二甲酸酐 Phthal ic Anhydr ide min 99.5%食盐(工业级) NACL / COMMON SALT ( INDUST RIALGRADE)5-氟-2-甲基吲哚5-Fluoro-2-methyl indol e7-甲氧吲哚 7-Methox yindo le6-甲氧吲哚 6-Methox yindo le5-甲氧吲哚 5-Methox yindo le4-甲氧吲哚 4-Methox yindo le过氧化氢 HYDROG EN PEROXI DE 50%柠檬酸 Citric Acid Mono BP-93 & BP-98白甜菜糖 whitebeet sugaar 45 icumsa钠羧甲基纤维素CMC (Sodium Carbox ymeth yl Cellul ose) BP/USP 固体石腊 PARAFF IN W AX2,3-二甲基吡啶2,3-Lutidi ne/2,3-Dimeth yl Pyridi ne反丁烯二酸的 FUMARI C ACID草甘膦 Glypho sate62 % IPA Salt乙酸锰 Mangan ese Acetat e玉米淀粉 CORN STARCH1,10-无水邻二氮杂菲 1,10-Phenan throl ine anhydr ous硫酸软骨素Chondr oitin Sulfat e (Bovine) 85% min. dry basis磺胺嘧啶 Sulpha diazi ne BP反丁烯二酸FUMARI C ACID TECH GRADE六磷酸钠 sodium hexame tapho sphat e地塞米松 Dexame thaso ne Base棕榈油(天然) palm oil (crude)氯化聚丙烯Chlori nated Polypr opyle ne III二氧化锆 ZIRCON IUM DIOXID E 99.5%碳酸锰 Mangan ese carbon ate氧化钴 Cobalt oxide72%反丁烯二酸Fumari c acid柠檬酸 citric acid硝酸钡 barium nitrat e 99.3%min碳化钙 calciu m carbid e三羟甲基丙烷 TriMet hylol Propa ne(TMP)微晶纤维素MICROC RYSTA LINECELLUL OSE M 1012-羟基萘 Beta Naphth ol ( 2-hydrox y naphth alene)顺丁烯二酐Maleic Anhydr ide冰醋酸 Glacia l acetic acid戊二醛(医药级) Glutar aldeh yde(Pharm. grade)鱼石脂 Ichtha mmolbase氢氧化钠 Sodium Hydrox ide柠檬酸 Citric Acid mono硬脂酸 Triple Presse d Steari c Acid叔丁醇 tert-butano l十二(烷)酸 lauric acid苯肼 Phenyl hydra zine高锰酸钾 Potass ium Perman ganat e美远志根酊TINCTU RE SENEGA吐根酊 TINCTU RE IPECAC磷霉素钙 Fosfom ycinCalciu m二甲基二硫代氨基甲酸钠 Sodium Dimeth yl Dithio carba mate松节油 GUM TURPEN TINEOIL氰亚铁酸钾POTASS IUM FERROC YANID E 99%二氧化钛 Titani um Dioxid TiO2 Food grade丙烯酸(酯化级) acryli c acid(esteri ficat ion grade)钛 Titani um metalpowder铬合金 Chrome metalpowderN-甲基o-苯二胺 N-Methyl-o-phenyl enedi amine甲酰四氢叶酸 LEUCOV ORINACETAT E阿霉素 Doxoru bicin蚁酸 Formic Acid-85%一水柠檬酸citric acid - monohy drate二氧化钛 titani um dioxid eN-丁基醋酸 N-ButylAcetat e磺胺钡 BARIUM SULPAT E PRECIP ITATE D2-氯乙烯盐酸胺 2- Chloro ethyl AmineHydroc hlori de苯(甲)酸苄酯 benzyl benzoa te4-巯基-2-乙烷基苯酚4-mercap to-2-ethylphenol磷酸 phosph oricacid聚丙烯片 PP Lamina tionGrade,3375 RM大豆低聚糖(颗粒) SOYBEA N OLIGOSACCHA RIDE(Granul es) 6-醌氯亚胺酸6-QUINOL INECA RBOXY LIC ACID碳酸钡 Barium Carbon ate - 99.5% Min.无水硫酸钠, Sodium Sulpha te Anhydr ous, Soda Ash (Heavy& Light无水硫酸钠, Sodium Sulpha te Anhydr ous, Soda Ash (Heavy& Light石油焦(炭) Cacine d Petrol eum Coke高锰酸钾 Potass ium Perman ganat e硫酸铝 alumin ium sulpha te硅酸钠 sodium silica te保险粉 Rongal ite C梭链孢酸钠Fusidi c Acid Sodium (Sodium Fusida te)硫磺 C. I. Sulphu r Blue 7 (53440)硬脂酸 Triple Presse d Steari c Acid凝胶 Gelati n 250 bloomand above(BORVIN E)碳酸钙 CALCIU M CARBON ATE FROM OYSTER SHELL甲酸钠 SODIUM FORMAT E 97%甲酸钠 SODIUM FORMAT E 97%氢硫化钠 SODIUM SULFHY DRATE硫化钠 SODIUM SULFID E 60% MIN.聚氯乙烯混合物 PVC Compou nd中间体 interm ediat es甘露醇 mannit ol pyroge n free usp.泛酰醇 d.panthe nol usp/ip泛酸钙 d.calciu m pantot henat e usp/ip蓝硅胶 Blue Silica Gel 3-5mm糠醛 furfur al 98.5%保险粉 sodium hydros ulfit e水杨酸 salicy lic acid , BP / USP Grade二氯甲烷 Methyl ene Chlori de保险粉 rongal ite氧化铬绿 chrome oxidegreen三价铬酸 chromi c acid蚁酸 Formic acid 85%草酸 Oxalic acid 99%过氧化氢 hydrog en peroxi de 50%2-氨基5-甲基噻唑 2-amino-5-methyl thiazo le五氟苯 pentafluoro benzen e四氟苯 tetrafluoro benzen e3-溴噻吩 3-bromothioph ene3-甲基噻吩 3-methyl thioph ene癸二酸 SEBACI C ACID甲苯,二甲苯,溶剂级石脑油 Toluen e, Xylene, Solven t Naphth a 维他命B1/B6 Vitami n B1/B6维他命AD3 Vitami n AD3长石 Feldsp ar石灰石(钙) Limest one (Calciu m Carbon ate)碱灰(碳酸钠) Soda Ash (Sodium Carbon ate)硅石 Silica sand冰醋酸 ACETIC GLACIA L ACID丙酮 Aceton e醋酸 ACETIC ACID 99 % ( GLACIA L ) - TECHNI CAL GRADE二氧化钛 Titani um Dioxid e b 101 Anatas e Grade5-硫代异酞酸二氢钠盐 5-Sulfoi sopht halic acid monoso diumsalt 氟酸 FLuors par Acid Grade三甲基苯氯化铵 Trimet hyl Phenyl ammoni um chlori de乙酸甲酯 Methyl acetat e草酸 Oxalic acid 99.6% min.乙酰胆碱碘Acetyl cholin e Iodide三氟甲烷磺胺锂 Lithiu m Triflu oro methan esulf onateN-(2-氯乙烯)-甲烷磺胺 N-(2-Chloro ethyl)-methan esulf onami de 硝酸 Nitric Acid冰醋酸 Glacia l Acetic Acid液态石蜡 lightliquid paraff in oil过氧化钠 sodium perox ide丁内酯Gamma-butyro lacto ne二甲基硫 dimeth yl sulphi de硫化钠 Sodium Sulphi de2-二乙基氨基乙基硫醇 2-DIETHY L AMINOE THANE THIOL制霉菌素 NYSTAT IN无水乳糖 Lactos e Anhydr ous硬脂酸镁 Magnes ium Steara te亚磷酸钾 potass ium phosph ite三甲基苯氯化铵 Trimet hyl Phenyl ammoni um chlori de三氧化锑 Antimo ny trioxi de min 99,5 %聚丙烯 Polypr opyle ne (PP)萘 Naphth aline balls3/4固体石腊 Paraff in Wax Semi Refine d木胶wood glue柠檬酸 Citric Acid Mono and Anh2,6-二异丙基苯酚 2,6-diisop ropyl pheno l铑 Metall ic Rhodiu m氯化铑(III) Rhodiu m (III) Chlori de Hydrat e乙酸甲酯 methyl acetat e磷酸三丁酯Tribut yl phosph ate三氯化磷 PHOSPH OROUS TRICHL ORIDE白色接合剂WHITECEMENT二氧化锰 Mangan se Dioxid e氯酸钾 POTASS IUM CHLORA TE 99.8%六偏磷酸钠Sodium Hexa Meta Phosph ate阻燃剂flameretard ant过氧化氢 Hydrog en Peroxi de 60%过氧化氢 Hydrog en Peroxi de 60%冰醋酸 Glacia l acetic acid min. 99.5%异丙醇(食品级) ISOPRO PYL ALCOHO L-FOOD GRADE甲乙酮 Methyl EthylKetone4,4二醛联苯4,4'-Biphen yldia ldehy de重铬酸钠 SODIUM DICHRO MATE磷酸三丁酯Tribut yl phosph ate乙酸甲酯 methyl acetat e三乙丙撑二醇 Trieth ylene Glycol色氨酸 d-trypto phan钼酸钠 Sodium Molybd ate五氧化二钒Vanadi um Pentox ide二氯苯 Dichlo ro Benzen e硒 Seleni um亚硝酸钠 sodium nitrit e硼砂 Borax硫酸二甲基二硫代氨基甲酸sodium Dimeth yldit hioca rbama te 硫酸铜(食品级) Copper sulpha te (feed grade)结晶香草醛VANILL IN CRYSTA L硝酸钠(化肥级) sodium nitrat e (fertil izergrade)反丁烯二酸FUMARI C ACIDL-谷酰胺 L-Glutam ine橡胶用磷酸三氯乙烯 Trichl oroet hyl Phosph ate for rubber一水柠檬酸Citric Acid Monohy drate安息香酸 benzoi c acid混合二甲苯MixedXylene环己酮 Cycloh exano ne1,4-丁二醇 1,4-Butane diol反丁烯二酸FUMARI C ACID硝酸钠 sodium nitrat e香草糖晶体VANILL IN CRYSTA L硫酸铜 Copper sulpha te (feed grade)L- 赖氨酸盐酸盐L-lysine HCL双氯芬酸钠DICLOF ENACSODIUM BP镉合金 Cadmiu m Metal硅酸锆矿石zircon ium ore silica te硒金属粉末Seleni um MetalPowder一水氢氧化锂 Lithiu m Hydrox ide Monohy drateSBS热塑人造橡胶 SBS Thermo plast ic elasto mer whitecolorpowder 甲苯 xylene维他命 vitami n a palmit iat石墨粉末 powder ed graphi te聚氯乙烯粉状/P废料 VC POWEDE R & PVC SCRAPS环己酰亚胺cycloh eximi del-苏氨酸 l-threon inel-一水赖氨酸l-lysine monohy dratel-半胱氨酸 l-cystei ne氨基葡(萄)糖盐酸 Glucos amine HCL多聚氨酯泡沫 Poly-Uretha ne Foam Agent氯化锌 zinc chlori de 98% min氯化铵 ammoni um chlori de碘 Iodine磷酸二氢钾Monopo tassi um phosph ate戊二醛 Glutar ic dialde hyde碳酸水 SODA ASH DENSE多虑平中间体 DOXEPI N INTERM EDIAT ES冰醋酸 Acetic Acid Glacia l醋酸丁酯 N-BUTYLACETAT E氢氧化钾 potasi um hydrox ide硫酸镁 magnis ium sulpha te二甲基二硫代氨基甲酸钠 sodium Dimeth yldit hioca rbama te 吐温-60 Tween-60盐酸 HCl 98-99% (USB/BP standa rd )盐酸 HCl 98-99% (USB/BP standa rd )碳酸水石soda ash三聚氰胺 Melami ne马来酸氟伏沙明 FLUVOX AMINE MALEAT E卡马西平 Carbam zepin e硫化褐10号 C.I. Sulphu r Brown10硫化兰7号C.I. Sulphu r Blue 7柠檬酸钠 Sodium Citrat e一水柠檬酸CITRIC ACID MONO苛性苏打薄片 Causti c Soda Flakes 96% and 99%磷酸三氯乙酯 Trichl oroet hyl Phosph ate乳酸环丙沙星注射液 Ciprof loxac in Lactat e山梨酸钾 Potass ium Sorbat e碳酸氢钠 SODIUM BICARB ONATE聚乙烯基吡咯烷酮PVP K120多虑平中间体 DOXEPI N INTERM EDIAT ES母料 Master Batch高氯酸钠 Sodium Perchl orate三氧化二砷Arseni c Trioxi de硫酸亚铁 ferrou s sulpha teFluore ne(95%)维生素c usp ,土霉素 Vitami n C USP, Oxytet racyc lineHCl 重晶石 Baryte s过氧化氢 Hydrog en Peroxi de氯羟柳胺 OXYCLO ZANID E BPV亚硝酸钠 Sodium Nitrit e Tech Grade三月桂胺 trilau rylam ine (Tridod ecyla mine对羟基苯甲酸甲酯 Methyl p-Hydrox ybenz oate盐酸甲基麻黄碱 Methyl ephed rineHCL高三尖杉酯碱 Homoha rring tonin e1-(氯甲基)萘 1-(Chloro methy l) naphth alene氧化铁黄 IRON OXIDEYELLOW HD718反丁烯二酸FUMARI C ACID苛性苏打薄片 CAUSTI C SODA FLAKES甲基氢醌 toluhy droqu inoneSodium Hyalur onate透明质酸钠n-丁基醋酸 N-butylAcetat e硝酸镍薄片NICKEL NITRAT E FLAKES硝酸钴晶体/薄片 COBALT NITRAT E CRYSTA LS / FLAKES 环已亚胺 Hexame thyle neimi ne磷酸三钙 Trical ciumPhosph ate二氧化锰 Mangan ese Dioxid e双氯苯双胍己烷葡(萄)糖酸盐 CHLORH EXADI NE 20%戊二醛 LUTARA LDEHY DE一氯乙酸 Monoch loroAcetic Acid二氧化钛 TITANI UM DIOXID E -- RKB2 & VULKAC IT -- LDA 硼酸 BoricAcid黄磷 Yellow Phosph orus亚硫酸氢钠SODIUM BISULP HITE碳酸氢钠 SODIUM BICARB ONATE磷酸 phosph oricacid 85 % tech. grade五水硼砂 BORAXPENTAH YDRAT E-99.9% MIN冰醋酸 ACETIC ACID GLACIA L 99.5%无水亚硫酸钠 sodium sulphi te anhydr ous 99.3%苏打 soda ash light99%苛性碱颗粒causti c soda prills 99%过氧化氢 HYDROG EN PEROXI DE 50%过氧化脲N46 UREA N46〈药〉扑热息痛 parace tamol氯化钙 drouscalciu m chlori de维生素B1,B2,B3,B12,K3,... Vitami ns B1,B2,B3,B12,K3,... 磷酸 phosph oricacid十二(烷)醇钠 Lauryi l Sodium无水硫酸钠SODIUM SULPHA TE ANHYDR OUS分散蓝 79 200%Disper se Blue 79 200%分散蓝 56 100% Disper se Blue 56 100%分散黑 EX-SF Disper se BlackEX-SF硫酸锰 MANGAN ESE SULPHA TE 32% IN MN反丁烯二酸FUMARI C ACID三硫化二锑Antimo ny Trisul fide三苯甲烷 triphe nyl borate硫酸镁 Magnes ium sulpha te硝酸钙 Calciu m nitrat e磷酸二氢钾Monopo tassi um phosph ate卡托普利 Captop ril次氯酸钙 Calciu m Hypoch lorit e水合葡萄糖DEXTRO SE MONOHY DRATE小苏打 Sodium Bicarb onate苏打 SODA ASH LIGHT对氨基苯酚para aminophenol过(二)硫酸甲 POTASS IUM PERSUL FATE异丙醇 Iso propyl Alcoho l氯仿 Chloro form富铝红柱石砖(325 目) mullit e 325 mesh羟甲基乙二醛 HYDROX YMETH YL GLYOXA L戊醛 VALERA LDEHY DEL-苹果酸 L-MALICACID2,6二甲代苯胺 2,6-Xylidi ne酒石酸唑吡坦片 Zolpid em Tartra te6-硝基藜芦酸6-nitrov eratr ic acid2-硝基-4,5二甲氧基安息香酸 2-Nitro-4,5-dimeth oxybe nzoic acid 磷酸 phosph oricacid磷酸三钠 trisod ium phosph ate9-芴甲基-N-琥珀酰亚胺基碳酸酯Fmoc-Osu氰硼氢化钠SODIUM CYANOBOROHY DRIDE三氟乙酸酐TRIFLU ORO ACETIC ANHYDR IDE甲酚 p-cresol塞克硝唑 Secnid azole2-亚氨氢氯化硫醇 2-Iminot hiola ne hydroc hlori de (Traut's Reagen t) 硫酰胺 SULFAM IDE苄醇 Benzyl Alcoho l二甲替甲酰胺 DIMETH YL FORMAM IDE白明胶 GELATI NE (bovine)锂 Lithiu m Produc ts焦碳酸二叔丁酯 Di-tert butylpyroca rbona te4-羧酸-噻唑 (R)-(-)-Thiazo lidin e-4-carbox ylicacid叔丁基咔唑盐 Tert-ButylCarbaz ate锌(用做涂料等的)钡白 lithop one环丙沙星 ciprof loxac in base混合物mix fcl过氧化氢 Hydrog en Peroxi de多阴离子纤维素 poly anioni c cellul ose for oil drilli ng ,HVp-氯-0-硝基苯胺 p-chloro-o-nitroa nilin e灰黄霉素 Griseo fulvi n1,3-二甲基-4,5-二氨基尿嘧啶 1,3-dimeth yl 4,5-diamin o uracil苯(甲)酸钠 Sodium Benzoa te磷酸三钠 TRI SODIUM PHOSP HATE氯化钙粉 CaCl2-powder电石 Calciu m Carbid e2-氨基-5-氟代甲基苯酸 2-Amino-5-fluoro benzo ic acid过氧化双苯甲酰 Di benzoy l peroxi de paste3-氟安息香酸3-Fluoro benzo ic acidDL酒石酸DL TARTAR IC ACID氧化锌93% zinc oxide93%硫酸锌 zinc sulpha te mono8-苄基茶碱 8-Benzyl Theoph yllin ed-戊醛糖 d-xylose磷酸二钙饲料等级 dicalc ium phosph ate feed grade水合肼 Hydraz ine Hydrat e氟利昂11,12 Freon11, 12高锰酸钾 Potass ium Perman ganat e BP93 or BP98氨基磺酸 Sulpha mic Acid 99.5%min二氯甲烷 methyl ene chlori de新霉素硫酸盐 NEOMYC IN SULPHA TE叔-丁基卡唑 TERT-BUTYLCARBAZ A TE碱库 SODA ASH LIGHT过氧化氢 HYDROG EN PEROXI DE安息香酸 Benzoi c Acid二氧化钛b101 锐钛矿 TITANI UM DI OXIDEB101 ANATAS EP-甲苯磺酰氰p-Toluen e sulfon yl cyanid e4,4'-二醛联苯 4,4' Biphen yldia ldehy de卫生球 naphth alene一甲胺 Monome thyla mine聚氯乙烯糊PVC paste苯胺油 anilin e oil三聚磷酸钠Sodium Tripol yphos phate左旋(四)咪唑盐酸 Levami soleHcl BP/USP一种肺结核特效药 oxamic hydraz ide2,6-二硝基苯胺202,6-dinitr oanil ine黄磷 yellow Phosph orous精酰胺 DMPAT四氮六甲圜Hexami ne乙二醇乙醚Ethyle ne Glycol1,2双乙氧基苯 1,2-DIETHO XY BENZEN E (C.A.S.:250.46.6 乙酸乙酯 ethylacetat e碳化钙 Calciu m Carbid e单烷基醚聚乙烯 Poly Mono AlkylEther氯化甲基苯基尿素 Chloro AlkylPhenyl Urea Conden sate磺酸钠烷 Sodium alkane Sulpho nate聚乙烯醇薄膜PV A (PVOH) FILM头孢西丁钠盐 cefoxi tin sodium salt精酰胺 DMPAT甲氰咪胍 CIMETI DINEUSP雷尼替丁 RANITI DINEHCL铅铬绿 Chrome Green99.0%min二氧化钛 Titani um Dioxid e6-氨基-1,3双甲基尿嘧啶 6-amino-1,3-dimeth ylura cil双氰胺 Dicyan adiam ide 99.5%乙烷深蓝醋酸盐 EthylCyanoAcetat e调药血管注射剂项目 PHARMA INJECT ABLEITEMSBon Acid无水硫酸钠sodium sulpha te anhydr ous二氧化钛 TiO2-Enamel grade-5FCL氯乙酸乙酯EthylChloro Acetat e无水硫酸钠SODIUM SULPHA TE ANHYDR OUS无水硫酸钠SODIUM SULPHA TE ANHYDR OUS 99%硫酸铵 ammoni um sulpha te 21%七水硫酸镁MAGNES IUM SULPHA TE HEPTAH YDRAT E 99.5% 羟基安息香酸 Para Hydrox y Benzoi c Acid1,3-丙磺内酯 1,3-propan e sulton e青霉素P-12 钠盐Oxac illin sodium salt盐酸林肯霉素 lincom ycinhydroc hlori de柠檬酸 CITRIC ACID FOOD GRADE碳酸二甲酯Di Methyl Carbon ate苏打 soda bicarb onate硫化钠 SODIUM SULPHI DE 60% MIN. RED & YELLOW甲酸钠 SODIUM FORMAT E RECOVE R FROM SODIUM HYDROPLANT扑热息痛 PARACE TAMOLo-nitrot oluen e扑热息痛细粉 Parace tamol BP Fine Powder三甲氧苄二氨嘧啶 Trimet hopri m BP乳酸 Lactic Acid 88%硫酸盐新霉素 NEOMYC IN SULPHA TE不规则聚丙烯 Atacti c Polypr opyle ne三磷酸盐钠STPP( sodium tripol yphos phate)2,4-二氯-5-氟苯乙酮 2,4-Dichlo ro-5-Fluoro Acetop henon e丙酮 aceton e异丙醇 isopro panol三(氮)唑核苷 Ribavi rina苯(甲)酸钠 sodium benzoa te bp 98硫酸镁 magnes ium sulpha te硫氰酸盐 Erytho rmyci n Thiocy anate1,4-丁二磺酰,二钠盐 1, 4-butane disul fonic acid, disodi um salt氧化铬绿 Chrome Oxidegreen99.0%min头孢氨苄 Cephal exinMonohy drate Micro/Compac ted对硝基甲苯Para NitroBenzyl Chlori de氢氧化钠 SODIUM HYDROS ULPHI TE二氧化钛 Titani um Dioxid e尿素 Urea 46% prille d二硫龙 disulf uram谷氨酸单钠msg powder type硫磺 sulphu r dyes all colors无水茶碱 Theoph yllin e Anhydr ous磷酸钾 Mono potass ium phosph ate氯苄 Benzyl Chlori de香草醛 vanill in扑热息痛 Parace tamol琥珀酰亚胺succin imide硝基苯胺 N-methyl-p-nitroa nilin e巯基乙酸 Thiogl ycoli c acid丙二醇 Propyl ene glycol马来酸盐 PHENRA MINEMALEAT E金属钠 sodium Metal99.5%氯化镁 Magnes ium Chlori de (Anhydr ous)二硫龙 disulf uram聚乙烯 Polyet hylen e Granul es (LDPE & HDPE) 2-羧基-9-芴酮 9-fluore none-2-carbox ylicacid聚醚 Polyet her PU and MDI尿素UREA 46二甘醇 DIETHY LENEGLYCOL乙醇 1-Piperd ino Ethano l青霉素酶 penici llininject ions聚乙烯吡咯烷酮 pvp k 30 techni cal grade硫脲 thiour ea dioxid e 99%聚乙烯醇PV A 1788无水柠檬酸citric acid anhydr ous bp柠檬酸钠 sodium citrat e扑热息痛 Parace tamol强力霉素 Doxycy cline hychla te甲氟喹 Mefloq uinehydroc hlori de氯胍 progua nil hydroc hlori de双甘膦 PMIDA98%螺旋霉素 Spiram ycinBase硫酸庆大霉素 GENTAM YCINSULPHA TE STERIL E BP98 邻苯二甲酸Diison oyl Phthal ate (DINP)酞酸二异癸酯 Diisod ecylPhthal ate (DIDP)Ammoni umChl oidebatter y grade丙烯酰胺 ACRYLA MIDE铬酸 chromi c acid氢溴酸 Hydrob romic acid 48% in watersoluti on维生素 Vitami n C苯酚晶体 phenol crysta l油酰胺 Oleami de氧氟沙星 Ofloxa cin Usp24苯甲精 Orthotolylbenzon itril e丙酰氯 propio nyl chlori de离析大豆蛋白 isolat ed soy protei n氨基乙酸 glycin e food grade苯二胺meta phenyl ene diamin e萘酚 BETA NAPHTH OL邻甲氧基苯胺 ORTHOANISID INE碘 IODINE CRUDE双氰胺 DICYAN DIAMI DE 99.5 PCT丙二酸 diethy l malona teN-甲基吡咯烷酮 N-methyl pyrro lidon e硫脲 Thiour ea 99% min碳酸钙 CALCIU M CARBON ATE (FOOD GRADE)吡喹酮praziq uante l梭链孢酸 FUSIDI C ACID硬化防止剂Antiox idant 22E46杀螟晴 Cyanox 1790二甲基二硫醚 Dimeth yl Disulf ide辅酶 Coenzy me Q10硅烷 Dimeth yl Dichlo ro Silane二甲基碳酰氯 Dimeth yl Carbon yl Chlori de 烟酸甲酯 Methyl Nicoti nate3-氯苯甲基氰化物 3-Chloro Benzyl Cyanid e 1,2,3-苯并三唑 1,2,3-Benzot riazo le赤铁 HEMATI TE, SPECUL AR (Fe203)法莫替丁 Famoti dine碳酸钡 Barium carbon ate黄磷 Yellow Phosph oru酪氨酸 L-TYROSI NE4-苯基-1-丁醇 4-phenyl-1-butano l电石 Calciu m Carbid e安息香酸 M-nitrobenzoi c acid硝酸钠 Sodium Nitrat e碳酸钙 Calciu m Carbon ate水银& 硒 Mercur y & Seleni um三聚磷酸钠STPP tech grade曲酸 KojicAcid蛋黄素 LECITH IN硫代硫酸钙Calciu m Thiocy anate硫氰酸盐 ERYTHR OMYCI N THIOCY ANATE BP98环戊醇 CYCLOP ENTAN EMETH ANOL糖精钠 Sodium Saccha rin BP932-甲氧基-5-硝基吡啶 2-methox y-5-nitrop yridi ne二氧化钛 TITANI UM DIOXID E POWDER, ANATAS E巴龙霉素 Paromo mycin sulfat e2-羟基-1,4-萘醌 2-Hydrox y-1,4-naphth oquin one (Lawson e). 偶氮二异丁腈 Diisop ropyl azodic arbox ylate双氯芬酸钾Diclof enacPotass 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原子序数元素符号中文名称拉丁文名英文名
原子序数元素符号中文名称拉丁文名英文名1 H 氢 Hydrog enium Hydrog en2 He 氦 Helium Helium3 Li 锂 Lithum Lithum4 Be 铍 Beryll ium Beryll ium5 B 硼 Borium Boron6 C 碳 Carbon ium Carbon7 N 氮 Nitrog enium Nitrog en8 O 氧 Oxygen ium Oxygen9 F 氟 Fluoru m Fluori ne10 Ne 氖 Neonum Neon11 Na 钠 Natriu m Sodium12 Mg 镁 Magnes ium Magnes ium13 Al 铝 Alumin ium Alumin ium14 Si 硅 Silici um Silico n15 P 磷 Phosph yorum Phosph orus16 S 硫 Sulphu Sulfur17 Cl 氯 Chloru m Chlori ne18 Ar 氩 Argonu m Argon19 K 钾 Kalium Potass ium20 Ca 钙 Calciu m Calciu m21 Sc 钪 Scandi um Scandi um22 Ti 钛 Titani um Titani um23 V 钒 Vanadi um Vanadi um24 Cr 铬 Chromi um Chromi um25 Mn 锰 Mangan um Mangan ese26 Fe 铁 Ferrum Iron27 Co 钴 Cobalt um Cobalt28 Ni 镍 Niccol um Nickel30 Zn 锌 Zincum Zinc31 Ga 镓 Galliu m Galliu m32 Ge 锗 German ium German ium33 As 砷 Arseni um Arseni c34 Se 硒 Seleni um Seleni um35 Br 溴 Bromiu m Bromin e36 Kr 氪 Krypto mum Krypto n37 Rb 铷 Rubidi um Rubidi um38 Sr 锶 Stront ium Stront ium39 Y 钇 Yttriu m Yttriu m40 Zr 锆 Zircon ium Zircon ium41 Nb 铌 Niobiu m Niobiu m42 Mo 钼 Molybd anium Molybd enum43 Tc 锝 Techne tium Techne tium44 Ru 钌 Ruthen ium Ruthen ium45 Rh 铑 Rhodiu m Rhodiu m46 Pd 钯 Pallad ium Pallad ium47 Ag 银 Argent um Silver48 Cd 镉 Cadmiu m Cadmiu m49 In 铟 Inlium Indium50 Sn 锡 Stannu m Tin51 Sb 锑 Stibiu m Antimo ny52 Te 碲 Tellur um Tellur ium53 I 碘 Iodium Iodine54 Xe 氙 Xenonu m Xenon55 Cs 铯 Caesiu m Caesiu m56 Ba 钡 Baryum Barium57 La 镧 Lantha num Lantha num59 Pr 镨 Praseo dymiu m Praseo dymiu m60 Nd 钕 Neodym ium Neodym ium61 Pm 钷 Promet hium Promet hium62 Sm 钐 Samari um Samari um63 En 铕 Europi nu Europi um64 Gd 钆 Gadoli nium Gadoli nium65 Tb 铽 Terbiu m Terbiu m66 Dy 镝 Dyspro sium Dyspro sium67 Ho 钬 Holmiu m Holmiu m68 Er 铒 Erbium Erbium69 Tm 铥 Thuliu m Thuliu m70 Yb 镱 Ytterb ium Ytterb ium71 Lu 镥 Lrteti um Luteci um72 Hf 铪 Hafniu m Hafniu m73 Ta 钽 Tanata lum Tantal um74 W 钨 Wolfra m Tungst en75 Re 铼 Rheniu m Rheniu m76 Os 锇 Osmium Osmium77 Ir 铱 Iridiu m Iridiu m78 Pt 铂 Platin um Platin um79 Au 金 Aurum Gold80 Hg 汞 Hydrar gyrum Mercur y81 Tl 铊 Thalli um Thalli um82 Pb 铅 Plumbu m Lead83 Bi 铋 Bismut hum Bismut h84 Po 钋 Poloni um Poloni um85 At 砹 Astati um Astati ne86 Rn 氡 Radon Radon87 Fr 钫 Franiu m Franci um88 Ra 镭 Radium Radium89 Ac 锕 Actini um Actini um90 Th 钍 Thoriu m Thoriu m91 Pa 镤 Protac tiniu m Protac tiniu m92 U 铀 Uraniu m Uraniu m93 Np 镎 Neptun ium Neptun ium94 Pu 钚 Pluton ium Pluton ium95 Am 镅 Americ ium Americ ium96 Cm 锔 Curkel ium Curium97 Bk 锫 Berkel ium Berkel ium98 Cf 锎 Califo rnium Califo rnium99 Es 锿 Einste inium Einste inium 100 Fm 镄 Fermim Fermiu m一些常见元素中英文名称对照表基本概念、基本理论元素化合物有机化学其它。
AG102-G中文资料
frequency = 1900 / 1910 MHz
40
35
Output Power (dBm) Gain (dB)
S22 (dB)
S22 vs. Frequency
0
-40c
+25c
+85c
-10
-20
-30
-40 0
500 1000 1500 2000 2500 3000 Frequency (MHz)
compliant SOT-89 Package x MTTF > 1000 years
Applications
x Mobile Infrastructure x CATV / DBS x W-LAN / ISM x RFID x Defense / Homeland Security x Fixed Wireless
ACPR vs. Channel Power
-35
25 °C, IS-95, 9 Ch. Forward, ±885 kHz offset, 30 kHz Meas BW
freq = 1900 MHz
-45
33399中文资料
Document Number: MC33399Rev. 8.0, 10/2006Freescale Semiconductor Advance Information* This document contains certain information on a new product.Specifications and information herein are subject to change without notice.© Freescale Semiconductor, Inc., 2006. All rights reserved.Local Interconnect Network (LIN) Physical Interface•••± 5•30 k Ω••••••• Figure 1. 33399 Simplified Application Diagram33399Analog Integrated Circuit Device Data33399INTERNAL BLOCK DIAGRAMINTERNAL BLOCK DIAGRAMFigure 2. 33399 Simplified Internal Block DiagramV REF ReceiverINF ENRXDTXD GNDLIN30 k ΩVSUPDriverWAKE Wake-Up V REG ControlBiasProtectionLogicAnalog Integrated Circuit Device Data 33399PIN CONNECTIONSPIN CONNECTIONSFigure 3. 33399 8-SOICN Pin ConnectionsTable 1. 8-SOICN Pin DefinitionsA functional description of each pin can be found in the Functional Pin Description section beginning on page 10.Pin Pin Name Formal Name Definition1RXDData Output MCU interface that reports the state of the LIN bus voltage. 2EN Enable Control Controls the operation mode of the interface.3WAKEWake Input High voltage input used to wake up the device from the Sleep mode.4TXDData Input MCU interface that controls the state of the LIN output.5GNDGround Device ground pin.6LIN LIN Bus Bidirectional pin that represents the single-wire bus transmitter and receiver.7VSUPPower Supply Device power supply pin.8INHInhibit OutputControls an external switchable voltage regulator having an inhibit input.12345678RXD EN WAKE TXDINH V SUP LIN GNDAnalog Integrated Circuit Device Data33399ELECTRICAL CHARACTERISTICS MAXIMUM RATINGSELECTRICAL CHARACTERISTICSMAXIMUM RATINGSTable 2. Maximum RatingsAll voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device.RatingSymbolValueUnitELECTRICAL RATINGS Power Supply Voltage Continuous Supply Voltage Transient Voltage (Load Dump)V SUP2740VWAKE DC and Transient Voltage (Through a 33 k Ω Serial Resistor)V WAKE - 18 to 40V Logic Voltage (RXD, TXD, EN Pins)V LOG - 0.3 to 5.5V LIN Pin DC VoltageTransient (Coupled Through 1.0 nF Capacitor)V BUS- 18 to 40- 150 to 100V INH Voltage / C urrent DC VoltageV INH - 0.3 to V SUP + 0.3V ESD Voltage, Human Body Model (1)All PinsLIN Bus Pin with Respect to Ground V E SD1± 4000± 5000VESD Voltage, Machine Model All PinsV E SD2± 200VTHERMAL RATINGS Operating Temperature Ambient JunctionT A T J - 40 to 125- 40 to 150°CStorage TemperatureT STG - 55 to 165°C Thermal Resistance , Junction to AmbientR θJA 150°C/W Peak Package Reflow Temperature During Reflow (2), (3)T PPRT Note 3.°C Thermal ShutdownT SHUT 150 to 200°C Thermal Shutdown HysteresisT HYST8.0 to 20°C Notes1.ESD1 testing is performed in accordance with the Human Body Model (C ZAP = 100 pF, R ZAP = 1500 Ω), ESD2 testing is performed inaccordance with the Machine Model (C ZAP = 220 pF, R ZAP = 0 Ω).2.Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device.3.Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL),Go to , search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics.Analog Integrated Circuit Device Data 33399ELECTRICAL CHARACTERISTICSSTATIC ELECTRICAL CHARACTERISTICSSTATIC ELECTRICAL CHARACTERISTICSTable 3. Static Electrical CharacteristicsCharacteristics noted under conditions 7.0 V ≤ V SUP ≤ 18 V, -40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at T A = 25°C under nominal conditions unless otherwise noted.CharacteristicSymbolMinTypMaxUnitVSUP PIN (DEVICE POWER SUPPLY)Supply Voltage Range V SUP7.013.518V Supply Current in Sleep Mode V LIN > V SUP - 0.5 V, V SUP < 14 V 14 V < V SUP < 18 V I S1I S2——20—50150µASupply Current in Normal Mode Recessive StateDominant State, Total Bus Load > 500 ΩI S(REC)I S(DOM)———— 2.03.0mASupply Undervoltage Threshold V SUP_UV5.56.46.8VRXD OUTPUT PIN (LOGIC)Low-Level Output Voltage I IN ≤ 1.5 mAV OL0.0—0.9VHigh-Level Output Voltage I OUT ≤ 250 µΑV OH3.75—5.25V TXD INPUT PIN (LOGIC)Low-Level Input Voltage V IL —— 1.5V High-Level Input VoltageV IH 3.5——V Input Voltage Threshold Hysteresis V INHYST 100550800mV Pullup Current Source1.0 V < V TXD < 4.0 V, V EN = 5.0 V I PU- 50—- 25µAEN INPUT PIN (LOGIC)Low-Level Input Voltage V IL —— 1.5V High-Level Input VoltageV IH 3.5——V Input Voltage Threshold Hysteresis V INHYST100480800mV EN Low-Level Input Current V IN = 1.0 VI IL5.02030µAHigh-Level Input Current V IN = 4.0 V I IH—2040µAPulldown Current 1.0 V < EN < 4.0 VI PD—20—µAAnalog Integrated Circuit Device Data33399ELECTRICAL CHARACTERISTICSSTATIC ELECTRICAL CHARACTERISTICSLIN PIN (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)Low-Level Bus Voltage (Dominant State) TXD LOW, V LIN = 40 mAV DOM0.0—1.4VHigh-Level Voltage (Recessive State) TXD HIGH, I OUT = 1.0 µA V REC0.85 V SUP——V Internal Pullup Resistor to VSUP (4)- 40°C ≤ T A ≤ 70°C 70°C < T A ≤ 125°C R PU203530494760k ΩCurrent Limitation TXD LOW, V LIN = V SUP I L IM50150200mALeakage Current to GNDRecessive State, V SUP - 0.3 V ≤ V LIN ≤ V SUP (4)V SUP Disconnected, -18 V ≤ V LIN ≤ 18 V (Excluding Internal Pullup Source)V SUP Disconnected, V LIN = -18 V (Including Internal Pullup Source)V SUP Disconnected, V LIN = +18 V (Including Internal Pullup Source)I L EAK0.0- 40————- 600151040——µALIN Receiver, Low-Level Input Voltage TXD HIGH, RXD LOWV L INL0 V SUP—0.4 V SUPVLIN Receiver, High-Level Input Voltage TXD HIGH, RXD HIGH V L INH0.6 V SUP—V SUPVLIN Receiver Threshold Center (V LINH - V LINL ) / 2V L INTH—V SUP /2—VLIN Receiver Input Voltage Hysteresis V LINH - V LINLV L INHYS0.05 V SUP—0.15 V SUPVLIN Wake-Up Threshold Voltage V L INWU 3.54.56.0VINH OUTPUT PINHigh-Level Voltage (Normal Mode)V WUH V SUP - 0.8—V SUPV Leakage Current (Sleep Mode)0 < V INH < V SUP I L EAK—5.0µAWAKE INPUT PINTypical Wake-Up Threshold (EN = 0 V, 7.0 V ≤ V SUP ≤ 18 V) (5)HIGH-to-LOW Transition LOW-to-HIGH Transition V WUTH0.3 V SUP 0.4 V SUP 0.43 V SUP 0.55 V SUP 0.55 V SUP 0.65 V SUP VWake-Up Threshold Hysteresis V WUHYS 0.1 V SUP0.16 V SUP0.2 V SUPV WAKE Input Current V WAKE ≤ 14 V V WAKE > 14 VI W U——1.0—5.0100µA Notes4. A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to V SUP .5.When V SUP is greater than 18 V, the wake-up voltage thresholds remain identical to the wake-up thresholds at 18 V. Table 3. Static Electrical Characteristics (continued)Characteristics noted under conditions 7.0 V ≤ V SUP ≤ 18 V, -40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at T A = 25°C under nominal conditions unless otherwise noted.CharacteristicSymbolMinTypMaxUnitAnalog Integrated Circuit Device Data 33399ELECTRICAL CHARACTERISTICSDYNAMIC ELECTRICAL CHARACTERISTICSDYNAMIC ELECTRICAL CHARACTERISTICSTable 4. Dynamic Electrical CharacteristicsCharacteristics noted under conditions 7.0 V ≤ V SUP ≤ 18 V, -40°C ≤ T A ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at T A = 25°C under nominal conditions unless otherwise noted.CharacteristicSymbolMinTypMaxUnitDIGITAL INTERFACE TIMING LIN Slew Rate (6) , (7)Falling Edge Rising Edget FALL t R ISE 0.750.75 2.02.0 3.03.0V/µsLIN Rise/Fall Symmetry (t RISE - t FALL )t S YM- 2.0—2.0µs Driver Propagation Delay (8) , (9) TXD LOW-to-LIN LOW TXD HIGH-to-LIN HIGH t TXDLINL t TXDLINH0.00.0——4.04.0µs Receiver Propagation Delay (9) ,(10) LIN LOW to RXD LOW LIN HIGH to RXD HIGHt RXDLINL t R XDLINH2.02.0 4.04.0 6.06.0µsReceiver Propagation Delay Symmetry t R ECSYM - 2.0— 2.0µs Transmitter Propagation Delay Symmetry t T RSYM - 2.0—2.0µs Propagation Delay (11)LIN Bus Wake-Up to INH HIGHt P ROP WL4570130µsNotess6.Measured between 20 and 80 percent of bus signal for 10 V < V SUP < 18 V. Between 30 and 70 percent of signal for7.0 V < V SUP < 10 V. 7.See Figure 5, page 8.8.t T XDLINL is measured from TXD (HIGH-to-LOW) and LIN (V REC - 0.2 V). t T XDLINH is measured from TXD (LOW-to-HIGH) and LIN (V DOM + 0.2 V).9.See Figure 4, page 8.10.Measured between LIN receiver thresholds and RXD pin.11.See Figure 6, page 8.Analog Integrated Circuit Device Data33399ELECTRICAL CHARACTERISTICS TIMING DIAGRAMSTIMING DIAGRAMSFigure 4. Normal Mode Bus Timing CharacteristicsFigure 5. LIN Rise and Fall Time Figure 6. LIN Bus Wake-UpTXDRXDLINV REC Dominant Statet TXDLINLt TXDLINHRecessive StateRecessive State 0.4 V SUP0.6 V SUPt RXDLINH t RXDLINLV DOM + 0.2VV REC - 0.2VV DOM t FALLt RISE0.2 V SUP0.8 V SUP0.8 V SUP0.2 V SUPINHLINV SUPDominant StateRecessive State 0.4 V SUPt PROP WLAnalog Integrated Circuit Device Data 33399FUNCTIONAL DIAGRAMSTIMING DIAGRAMSFUNCTIONAL DIAGRAMSFigure 7. LIN Wake-Up with INH Option Figure 8. LIN Wake-Up from Wake-Up SwitchFigure 9. LIN Wake-Up with MCU in Stop ModeLIN BusINH Bus Wake-Up Filtering Time (t PROG WL)Voltage Off StateOn StateNode in Sleep StateNode in Regulator Wake-Up Time DelayLow or FloatingHighMCU Startup Time DelayENEN HighOperation RegulatorWAKEINH Voltage Off StateOn StateNode in Sleep StateNode in Regulator Wake-Up Time DelayHighMCU Startup Time DelayENEN HighOperation State ChangeRegulatorLow or FloatingWAKE Filtering TimeLIN BusIRQWake-Up Filtering Time (t PROG WL)Voltage RegOn StateMCU in Stop ModeNode In OperationHighLow MCU Stop Mode Recovery/Startup Time DelayEN StateEN HighHighWake-Up from Stop ModeINHLow or Floating High(previous Wake-Up)I/O(2)High Impedance / I/O in Input State LowAnalog Integrated Circuit Device Data33399FUNCTIONAL DESCRIPTION TIMING DIAGRAMSFUNCTIONAL DESCRIPTIONINTRODUCTIONThe 33399 is a Physical Layer component dedicated to automotive LIN sub-bus applications.The 33399 features include speed communication from 1.0 kbps to 20 kbps, up to 60 kbps for Programming Mode, and active bus waveshaping to minimize radiated emission.The device offers three different wake-up capabilities: wake-up from LIN bus, wake-up from the MCU command, and dedicated high voltage wake-up input.The INH output may be used to control an external voltage regulator.FUNCTIONAL PIN DESCRIPTIONPOWER SUPPLY PIN (VSUP)The V SUP power supply pin is connected to a batterythrough a serial diode for reverse battery protection. The DC operating voltage is from 7.0 V to 27 V. This pin sustains standard automotive voltage conditions such as 27 V DC during jump-start conditions and 40 V during load dump. To avoid a false bus message, an undervoltage reset circuitry disables the transmission path (from TXD to LIN) when V SUP falls below 7.0 V. Supply current in the Sleep mode is typically 20 µA.GROUND PIN (GND)In case of a ground disconnection at the module level, the 33399 does not have significant current consumption on the LIN bus pin when in the recessive state. (Less than 100 µA is sourced from LIN bus pin, which creates 100 mV drop voltage from the 1.0 k Ω LIN bus pullup resistor.) For the dominant state, the pullup resistor should always be active. The 33399 handles a ground shift up to 3.0 V when V SUP > 9.0 V. Below 9.0 V V SUP , a ground shift can reduce V SUP value below the minimum V SUP operation of 7.0 V.LIN BUS PIN (LIN)The LIN bus pin represents the single-wire bus transmitter and receiver.Transmitter CharacteristicsThe LIN driver is a low-side MOSFET with internal current limitation and thermal shutdown. An internal pullup resistor with a serial diode structure is integrated so no external pullup components are required for the application in a slave node. An additional pullup resistor of 1.0 k Ω must be added when the device is used in the master node.Voltage can go from - 18 V to 40 V without current other than the pullup resistance. The LIN pin exhibits no reverse current from the LIN bus line to V SUP , even in the event of GND shift or V PWR disconnection. LIN thresholds are compatible with the LIN protocol specification.The fall time from recessive to dominant and the rise time from dominant to recessive are controlled to typically 2.0 V/µs. The symmetry between rise and fall time is also guaranteed.When going from dominant to recessive, the busimpedance parasitic capacitor must be charged up to V SUP.This charge-up is achieved by the total system pullup current resistors. In order to guarantee that the rise time is within specification, maximum bus capacitance should not exceed 10 nF with bus total pullup resistance less than 1.0 k Ω.Receiver CharacteristicsThe receiver thresholds are ratiometric with the device supply pin. Typical threshold is 50%, with a hysteresis between 5% and 10% of V SUP .DATA INPUT PIN (TXD)The TXD input pin is the MCU interface that controls the state of the LIN output. When TXD is LOW, LIN output is LOW; when TXD is HIGH, the LIN output transistor is turned OFF.This pin has an internal 5.0 V internal pullup currentsource to set the bus in a recessive state in case the MCU is not able to control it; for instance, during system power-up/power-down. During the Sleep mode, the pullup current source is turned OFF.DATA OUTPUT PIN (RXD)The RXD output pin is the MCU interface that reports the state of the LIN bus voltage. LIN HIGH (recessive) is reported by a high level on RXD; LIN LOW (dominant) is reported by a low voltage on RXD. RXD output structure is a CMOS-type push-pull output stage.ENABLE INPUT PIN (EN)The EN pin controls the operation mode of the interface. If EN = logic [1], the interface is in normal mode, with thetransmission path from TXD to LIN and from LIN to RXD both active. If EN = logic [0], the device is in Sleep mode or low power mode, and no transmission is possible.In Sleep mode, the LIN bus pin is held at V SUP through the bus pullup resistors and pullup current sources. The device can transmit only after being awakened. Refer to the INHIBIT OUTPUT PIN (INH) description on page 11.During Sleep mode, the device is still supplied from the battery voltage (through V SUP pin). Supply current is 20 µA typical. Setting the EN pin to LOW will turn the INH to high impedance. The EN pin has an internal 20 µA pulldown current source to ensure the device is in Sleep mode if EN floats.Analog Integrated Circuit Device Data 33399FUNCTIONAL DESCRIPTIONTIMING DIAGRAMSINHIBIT OUTPUT PIN (INH)The INH pin controls an external switchable voltageregulator having an inhibit input. This pin is a high-side switch structure to V SUP . When the device is in the Normal mode, the inhibit high-side switch is turned ON and the external voltage regulator is activated. When the device is in Sleep mode, the inhibit switch is turned OFF and disables the voltage regulator (if this feature is used).A wake-up event on the LIN bus line will switch the INH pin to V SUP level. Wake-up output current capability is limited to 280 µA. INH can also drive an external MOSFET connected to an MCU IRQ or XIRQ input to generate an interrupt. See the typical application illustrated in Figure 13, page 15.WAKE INPUT PIN (WAKE)The WAKE pin is a high-voltage input used to wake up the device from Sleep mode. WAKE is usually connected to an external switch in the application. The typical WAKE thresholds are V SUP / 2.The WAKE pin has a special design structure and allows wake-up from both HIGH-to-LOW or LOW-to-HIGHtransitions. When entering the Sleep mode, the LIN monitors the state of the WAKE pin and stores it as a reference state. The opposite state of this reference state will be the wake-up event used by the device to re-enter Normal mode.An internal filter is implemented (50 µs typical filtering time delay). The WAKE pin input structure exhibits a highimpedance with extremely low input current when voltage at this pin is below 14 V. When voltage at the WAKE pinexceeds 14 V, input current starts to sink into the device. A series resistor should be inserted in order to limit the input current, mainly during transient pulses. Recommended resistor value is 33 k Ω.Important The WAKE pin should not be left open. If the wake-up function is not used, WAKE should be connected to GND to avoid false wake-up.Analog Integrated Circuit Device Data33399FUNCTIONAL DEVICE OPERATION OPERATIONAL MODESFUNCTIONAL DEVICE OPERATIONOPERATIONAL MODESAs described below and depicted in Figure 10 and Table 5 on page 13, the 33399 has two operational modes, normal and sleep, and one transitional mode, Awake.NORMAL MODEThis is the normal transmitting and receiving mode. All features are available.SLEEP MODEIn this mode the transmission path is disabled and the device is in low power mode. Supply current from V SUP is 20 µA typical. Wake-up can occur from LIN bus activity, as well as from node internal wake-up through the EN pin and the WAKE input pin.DEVICE POWER-UP (AWAKE TRANSITIONAL MODE)At system power-up (V SUP rises from zero), the 33399 automatically switches into the “Awake ” mode (refer toFigure 10 below and Table 5 on page 13. It switches the INH pin in HIGH state to V SUP level. The microcontroller of the application then confirms the Normal mode by setting the EN pin HIGH.DEVICE WAKE-UP EVENTSThe device can be awakened from Sleep mode by three wake-up events:•LIN bus activity•Internal node wake-up (EN pin)•Wake-up from WAKE pinFigures 7, 8, and 9 on page 9 show device application circuit and detail of wake-up operations.Wake-Up from LIN Bus (Awake Transitional Mode)A wake-up from the LIN pin switching from recessive to dominant state (switch from V SUP to GND) can occur. This is achieved by a node sending a wake-up frame on the bus. This condition internally wakes up the interface, which switches the INH pin to a HIGH level to enable the voltage regulator. The device switches into the Awake mode. The microcontroller and the complete application power up. The microcontroller must switch the EN pin to a HIGH level to allow the device to leave the Awake mode and turn it into Normal mode in order to allow communication on the bus.Wake-Up from Internal Node Activity (Normal Mode)The application can internally wake up. In this case the microcontroller of the application sets the EN pin in the HIGH state. The device switches into Normal mode.Wake-Up from WAKE Pin (Awake Transitional Mode)The application can wake up with the activation of an external switch. Refer to Table 1, 8-SOICN Pin Definitions on page 3.Figure 10. Operational and Transitional Modes State DiagramPower-Up/SleepAwakeNormal EN LOWLIN Bus or WAKE PinEN HIGHWake-UpEN HIGH (Local Wake-Up Event)1.0 to 20kbpsV PWR > 7.0VNote Refer to Table 5 for explanation.V PWR < 7.0VV PWR < 7.0VV PWR < 7.0VDownAnalog Integrated Circuit Device Data 33399FUNCTIONAL DEVICE OPERATIONPROTECTION AND DIAGNOSIS FEATURESPROTECTION AND DIAGNOSIS FEATURESELECTROSTATIC DISCHARGE (ESD)The 33399 has two Human Body Model ESD values. All pins can handle ± 4.0 kV. The LIN bus pin, with respect to ground, can handle ± 5.0 kV.ELECTROMAGNETIC COMPATIBILITYRADIATED EMISSION ON LIN BUS OUTPUT LINERadiated emission level on the LIN bus output line is internally limited and reduced by active slew rate control of the output bus driver. Figure 11 shows the results in the frequency range 100 kHz to 2.0 MHz.ELECTROMAGNETIC IMMUNITY (EMI)On the LIN bus pin, the 33399 offers high EMI level from external disturbance occurring at the LIN bus pin in order to guarantee communication during external disturbance.On the WAKE input pin, an internal filter is implemented to reduce false wake-up during external disturbance.NOISE FILTERINGNoise filtering is used to protect the electronic module against illegal wake-up spikes on the bus. Integrated receiver filters suppress any high-frequency (HF) noise induced into the bus wires. The cut-off frequency of these filters is a compromise between propagation delay and HF suppression.Figure 11. Radiated Emission in Normal ModeTable 5. Explanation of Operational and Transitional Modes State DiagramOperational/ Transitional LININH EN TXD RXDSleep Mode Recessive state, driver off. 20 µA pullup current source.LOW LOW X High impedance.Awake Recessive state, driver off. HIGH LOW XLOW.Normal ModeDriver active. 30 k Ω pullup active.HIGHHIGHLOW to drive LIN bus in dominant.HIGH to drive LIN bus in recessive.Report LIN bus level: • LOW LIN bus dominant • HIGH LIN bus recessiveX = Don’t care.Analog Integrated Circuit Device Data33399TYPICAL APPLICATIONSTYPICAL APPLICATIONSThe 33399 can be configured in several applications. Figures 12 and 13 show slave and master node applications. An additional pullup resistor of 1.0 k Ω in series with a diode must be added when the device is used in the master node.Figure 12. Slave Node Typical Application with WAKE Input Switch and INH(Switchable 5.0 V Regulator)Actuator SCIMCUDriverM12V5.0VINH5.0 VL I N B u sV REGI/OV DD External SwitchRXDTXDENLINVSUPV REF LogicGNDDriverReceiverBias INHProtectionWake-Up WAKE30k Ω33399V PWRRegulator Regulator ControlAnalog Integrated Circuit Device Data 33399TYPICAL APPLICATIONSFigure 13. Master Node Typical Device Application with MCU Wake-Up from Stop Mode(Non-Switchable 5.0 V Regulator, MCU Stop Mode)Actuator SCIMCU DriverM5.0 VL I N B u sMaster Node PullupIRQ5.0VI/O V DD I/O(2)RXDTXDENLINVSUPV REF LogicGNDDriverReceiverBiasINHProtectionWAKE30k Ω1.0k Ω33399V PWRExternal Switch12V5.0VRegulator Wake-Up Regulator ControlREFERENCE DOCUMENTSREFERENCE DOCUMENTSTable 6. Reference DocumentsTitle LIterature Order Number Local Interconnect Network (LIN) Physical Interface: Difference Between MC33399 and MC33661EB21533399Analog Integrated Circuit Device DataAnalog Integrated Circuit Device Data 33399PACKAGINGPACKAGE DIMENSIONSPACKAGINGPACKAGE DIMENSIONSImportant For the most current revision of the package, visit and do a keyword search on the 98Adrawing number below.8-PIN SOIC NARROW BODYPLASTIC PACKAGE 98ASB42564B ISSUE UAnalog Integrated Circuit Device Data33399REVISION HISTORYREVISION HISTORYREVISIONDATE DESCRIPTION OF CHANGES7.07/2006•Implemented Revision History page •Added Pb-Free suffix code EF•Added EPP ordering part number MCZ33399EF/R2•Adjusted to the Freescale prevailing form and style8.010/2006•Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from MAXIMUM RATINGS on page 4. Added note with instructions to obtain this information from .MC33399Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice to any products herein. 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AK 98
AK98™Dialysis Machine操作手册程序版本1.xx订单号:MHCZHCN12626-02/15HCZHCN12626修订02.2015程序版本1.xx©2014Gambro Lundia AB。
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Operators handbook1用前须知 (1)2机器说明 (17)3操作血液透析装置 (39)4血液透析-双针治疗 (57)5血液透析-单针治疗 (85)6单纯超滤 (93)7图形预制功能 (97)8测量血压(选件) (105)9检查清除率(选件) (111)10消毒和清洁 (117)11对AK98™血液透析装置和WRO系统进行消毒 (131)12维护和操作 (135)13技术数据和规格 (141)14当地法规登记号(如果有) (161)Alarm handbook1报警 (1)2关注信息 (55)HCZHCN12626修订02.2015程序版本1.xx目录1用前须知 (1)1.1阅读操作手册时的重要事项 (2)1.1.1关于本操作手册 (2)1.1.2安全定义 (2)1.1.3值和设置 (2)1.1.4按钮 (2)1.1.5关于屏幕 (2)1.1.6符号 (4)1.2使用前的一般警告和注意事项 (6)1.2.1使用前的一般注意事项 (6)1.2.2责任与免责声明 (8)1.2.3漏电和等电位连接 (8)1.2.4治疗地点 (9)1.2.5中心静脉导管 (9)1.2.6外部电气设备连接 (9)1.2.7如何移动AK98血液透析装置 (9)1.2.8安全须知 (9)1.3预期用途 (10)1.3.1预期用途 (10)1.3.2培训 (11)1.3.3消毒和功能检查 (11)1.3.4进水要求 (11)1.3.5中央输送系统的卫生质量 (11)1.3.6配制透析液 (11)1.4附件 (12)1.4.1浓缩液、化学消毒剂、附件和消耗品 (12)1.4.2浓缩液 (12)1.4.3化学消毒剂 (13)1.4.4血液管路 (13)1.4.5附件 (13)1.4.6超滤器(选件) (13)1.4.7透析器 (14)1.4.8血压测量附件 (14)1.5术语 (15)1.5.1术语 (15)2机器说明 (17)2.1血液部分 (18)2.1.1血液部分的部件 (18)2.1.2血液部分部件详细信息 (19)2.2液体部分 (26)2.2.1液体部分的部件 (26)2.2.2液体部分组件详细信息 (27)HCZHCN12626修订02.2015程序版本1.xx2.3背面的部件 (32)2.3.1背面的部件 (32)2.3.2背面部件详细信息 (33)3操作血液透析装置 (39)3.1操作员位置 (40)3.1.1操作员位置 (40)3.2打开和关闭血液透析装置 (40)3.2.1主开关 (40)3.2.2开/关按钮 (40)3.3指示灯和按钮 (40)3.3.1指示灯 (40)3.3.2操作员面板上的按钮 (41)3.4屏幕 (42)3.4.1屏幕概述 (42)3.4.2静脉和动脉压力控制(1,2) (43)3.4.3机器状态指示灯(3) (43)3.4.4时间(4) (43)3.4.5血液路径(5) (44)3.4.6液体流路(6) (44)3.4.7旁路路径 (44)3.4.8血压区(7,8)(选件) (44)3.4.9清除率区(9,10)(选件) (44)3.4.10治疗浏览(11–15) (44)3.4.11报警选项卡(16) (45)3.4.12信息选项卡(17) (45)3.4.13信息字段(18) (45)3.4.14预冲按钮(19) (45)3.4.15回血按钮(20) (45)3.4.16消毒按钮(21) (46)3.4.17血液按钮(22) (47)3.4.18液体按钮(23) (48)3.4.19液体旁路按钮(24) (50)3.4.20超滤按钮(25) (51)3.4.21治疗历史记录页面(26) (51)3.4.22状态栏(27) (51)3.4.23服务菜单 (51)3.5浓缩液待命模式 (52)3.5.1关于暂停透析液 (52)3.5.2手动暂停透析液的配制 (53)3.5.3恢复透析液的配制 (53)3.5.4自动暂停透析液配制 (53)3.6在电源故障期间操作机器 (53)3.6.1在有备用电池的情况下出现电源故障 (53)3.6.2在没有备用电池的情况下出现电源故障 (53)3.6.3手动为病人回血 (54)HCZHCN12626修订02.2015程序版本1.xx3.7在治疗过程中更换透析器和血路管 (54)3.8超滤控制 (55)4血液透析-双针治疗 (57)4.1基本功能 (58)4.2开始双针治疗 (58)4.2.1治疗前检查事项 (58)4.2.2开始功能检查 (58)4.2.3设置血液透析装置 (59)4.2.4连接动脉血液管路 (61)4.2.5连接静脉血液管路 (66)4.2.6连接肝素注射器 (71)4.2.7预冲透析循环 (73)4.2.7.1预冲说明 (73)4.2.7.2手动预冲 (73)4.2.7.3辅助预冲 (75)4.2.8预冲选项 (76)4.2.8.1额外预冲 (76)4.2.8.2再循环 (76)4.2.9设置治疗时间 (77)4.2.10设置超滤量 (77)4.2.11设置肝素值 (78)4.2.12连接病人 (79)4.2.13开始治疗 (81)4.3结束双针治疗 (82)4.3.1结束治疗 (82)4.3.2确认断开病人 (83)4.3.3机器后期处理 (83)5血液透析-单针治疗 (85)5.1基本功能 (86)5.2准备 (86)5.3连接病人 (89)5.4开始治疗 (90)5.5结束单针治疗 (91)6单纯超滤 (93)6.1基本功能 (94)6.2处理单纯超滤 (94)6.2.1启用单纯超滤 (94)6.2.2如何再添加一个单纯超滤量 (94)6.2.3停止单纯超滤 (95)6.3其他信息 (95)6.3.1肝素 (95)HCZHCN12626修订02.2015程序版本1.xx7图形预制功能 (97)7.1一般信息 (98)7.2钠和碳酸氢盐浓度曲线 (98)7.3超滤率曲线 (98)7.4图形预制功能设置/启用 (101)7.5无预设模型的图形预制功能 (102)7.5.1无预设模型的超滤图形预制功能 (102)7.5.2无预设模型的钠图形预制功能 (103)7.5.3无预设模型的碳酸氢盐图形预制功能 (103)7.6设置和启用带预设模型的图形预制功能 (104)8测量血压(选件) (105)8.1血压监测仪(BPM) (106)8.2血压袖带 (106)8.3直接血压测量 (107)8.4间隔时间血压测量 (108)8.5测量历史记录 (108)8.6设置报警限值 (109)8.7血压测量期间的病人护理 (109)8.7.1所有病人 (109)8.7.2高血压病人 (110)8.7.3心律不齐的病人 (110)9检查清除率(选件) (111)9.1清除率测量(Diascan™)如何工作 (112)9.2清除率测量检查内容 (112)9.3检查K和Kt (112)9.4检查Kt/V (113)9.5测量历史记录 (114)9.6设置Kt/V目标值 (114)9.7设置K或Kt/V过低的报警 (115)9.8影响测量的因素 (115)10消毒和清洁 (117)10.1消毒和清洁–一般信息 (118)10.2启动前的检查事项 (118)10.3加热消毒 (119)10.3.1加热消毒说明 (119)10.3.2清洁和脱钙 (119)10.3.3启动加热消毒 (119)HCZHCN12626修订02.2015程序版本1.xx10.3.4启动使用CleanCart™清洗棒的加热消毒 (120)10.3.5启动使用液体柠檬酸的加热消毒 (120)10.3.6启动使用液体柠檬酸的短时间加热消毒 (120)10.3.7整合加热消毒 (121)10.3.7.1整合加热消毒 (121)10.3.7.2安排加热消毒方案 (121)10.3.7.3关闭已安排的方案 (122)10.3.8使用WRO300H单元进行整合加热消毒 (122)10.3.8.1使用WRO300H单元进行整合加热消毒 (122)10.4化学消毒 (122)10.4.1有关化学消毒 (122)10.4.2启动化学消毒 (123)10.4.3启动中央化学消毒 (123)10.4.4对WRO单元执行化学消毒方案 (124)10.4.5消毒剂残留物检测 (124)10.4.6消毒历史记录 (124)10.4.7关于化学消毒剂 (125)10.5冲洗和排水 (125)10.5.1启动冲洗或排水 (125)10.5.2安排冲洗方案 (125)10.5.3关闭特定天的冲洗方案 (126)10.6存放灌有化学消毒剂的机器 (126)10.6.1在血液透析装置中灌注化学消毒剂 (126)10.6.2开始使用灌有化学消毒剂的血液透析装置 (127)10.7参考 (127)10.7.1消毒剂、脱钙剂和清洁剂-特征 (127)10.7.2清洁和消毒安排 (128)10.7.3流量路径 (129)11对AK98™血液透析装置和WRO系统进行消毒 (131)11.1一般说明 (132)11.2使用WRO300H单元进行整合加热消毒 (132)11.2.1对WRO300H单元进行整合加热消毒的说明 (132)11.2.2安排整合加热消毒 (132)11.2.3手动启动整合加热消毒 (132)11.3对WRO单元执行中央化学消毒方案 (133)11.3.1对WRO单元执行中央化学消毒方案的说明 (133)11.3.2启动WRO单元的中央化学消毒 (133)11.4冲洗设置 (134)11.4.1冲洗设置 (134)HCZHCN12626修订02.2015程序版本1.xx12维护和操作 (135)12.1维护 (136)12.2血泵转子 (136)12.2.1血泵转子的维护 (136)12.2.2清洁血泵转子 (136)12.3清洁漏血探测器 (137)12.4进水管 (137)12.5吸液管 (137)12.6表面和顶部托盘 (138)12.7更换超滤器 (138)12.8存放 (139)12.9服务 (139)12.10丢弃 (139)13技术数据和规格 (141)13.1性能和规格-控制系统 (143)13.1.1预冲 (143)13.1.2血流控制 (143)13.1.3肝素泵 (143)13.1.4血压 (144)13.1.5血压监测仪(BPM) (144)13.1.6透析液准备 (144)13.1.7超滤控制 (145)13.1.8超滤保护 (146)13.1.9图形预制功能 (146)13.1.10Diascan™(选件) (146)13.1.11消毒和清洁-化学消毒 (146)13.1.12消毒和清洁–加热消毒 (147)13.1.13自动加热消毒 (148)13.1.14加热消毒方案(包括WRO300H) (148)13.1.15消毒和清洁-冲洗/排水 (148)13.1.16消毒和清洁-外部清洁 (148)13.1.17供水 (148)13.1.18电源 (149)13.1.19外部设备连接 (150)13.1.20备用电池 (150)13.2性能和规格-监控系统 (150)13.2.1血压监控 (150)13.2.2空气探测 (151)13.2.3因凝血造成的体外血液流失 (151)13.2.4透析液准备 (151)13.2.5超滤控制系统 (151)13.2.6漏血探测 (152)HCZHCN12626修订02.2015程序版本1.xx13.3报警声压 (152)13.3.1报警声压 (152)13.4物理数据 (152)13.4.1尺寸和重量 (152)13.4.2输液支架 (152)13.5与透析液、浓缩液和水接触的材料 (152)13.5.1聚合物 (152)13.5.2金属 (153)13.5.3其它材料 (153)13.6环境数据 (153)13.6.1中国RoHS声明表 (153)13.6.2操作 (153)13.6.3运输和储存 (154)13.6.4电磁环境 (154)13.6.5预期使用寿命 (157)13.6.6能耗 (157)13.7标准 (158)14当地法规登记号(如果有) (161)HCZHCN12626修订02.2015程序版本1.xx1用前须知1.1阅读操作手册时的重要事项 (2)1.1.1关于本操作手册 (2)1.1.2安全定义 (2)1.1.3值和设置 (2)1.1.4按钮 (2)1.1.5关于屏幕 (2)1.1.6符号 (4)1.2使用前的一般警告和注意事项 (6)1.2.1使用前的一般注意事项 (6)1.2.2责任与免责声明 (8)1.2.3漏电和等电位连接 (8)1.2.4治疗地点 (9)1.2.5中心静脉导管 (9)1.2.6外部电气设备连接 (9)1.2.7如何移动AK98血液透析装置 (9)1.2.8安全须知 (9)1.3预期用途 (10)1.3.1预期用途 (10)1.3.2培训 (11)1.3.3消毒和功能检查 (11)1.3.4进水要求 (11)1.3.5中央输送系统的卫生质量 (11)1.3.6配制透析液 (11)1.4附件 (12)1.4.1浓缩液、化学消毒剂、附件和消耗品 (12)1.4.2浓缩液 (12)1.4.3化学消毒剂 (13)1.4.4血液管路 (13)1.4.5附件 (13)1.4.6超滤器(选件) (13)1.4.7透析器 (14)1.4.8血压测量附件 (14)1.5术语 (15)1.5.1术语 (15)1.1阅读操作手册时的重要事项1.1.1关于本操作手册这本操作手册提供了正确使用AK200SAK200ULTRA SAK96AK98NewayPrismaflex血液透析装置所需的说明。
塑料缩写对照表
塑料缩写对照表
中文名称
丙烯酸甲酯 甲基丙烯酸 甲基丙烯酸甲酯-丙烯腈-丁二烯-苯乙烯共聚物 甲基丙烯醛 甲基丙烯酸-丁二烯-苯乙烯共聚物 甲基纤维素 三聚氰胺氰脲酸盐 改性聚己内酰胺(铸型尼龙6) 改性氯丁冷粘鞋用胶 二苯甲烷二异氰酸酯(甲撑二苯基二异氰酸酯) 中密聚乙烯 丁酮(甲乙酮) 过氧化甲乙酮 酯肪酸甲酯磺酸盐 三聚氰胺-甲醛树脂 改性高冲聚苯乙烯 甲基异丁基酮 甲基丙烯酸甲酯 甲基甲酰胺 甲基丙烯腈 乙醇酸乙酯 三聚氨胺-酚醛树脂 甲基丙基甲酮 改性聚丙烯 改性聚苯醚 改性聚苯乙烯 苯乙烯-甲基丙烯酸甲酯树脂 石油醚 甲基叔丁基醚 氯丁胶新型交联剂 旋转模塑 醇溶三元共聚尼龙 间苯二甲基二胺 丁腈橡胶 二异氰酸萘酯 邻苯二甲酸正癸辛酯 邻苯二甲酸己正癸酯 偏苯三酸正己酯 癸二酸二异辛酯 正硬酯酸铅 N-甲基吡咯烷酮 己二酸正辛正癸酯 邻苯二甲酸正辛正癸酯 壬基酚聚氧乙烯醚 天然橡胶
塑料缩写对照表
中文名称
异辛醇 丙烯酸 丙烯酸酯-丙烯酸酯-苯乙烯共聚物 丙烯腈/丁二烯/丙烯酸酯共聚物 偶氮(二)甲酰胺 壬基苯氧基丙烷磺酸钠 丙烯腈/丁二烯/苯乙烯共聚物 偶氮(二)异丁腈 丙烯腈/甲基丙烯酸甲酯共聚物 聚芳香酯 丙烯腈-苯乙烯树脂 丙烯腈/苯乙烯/丙烯酸酯共聚物 苯甲醇 正丁醛苯胺缩合物 碱式氯化铝 新型阻燃剂 双水杨酸双酚A酯 2,3-巯(基)丙醇 邻苯二甲酸丁苄酯 N-叔丁基-乙-苯并噻唑次磺酰胺 叶酸 β -环糊精 苯顺二醇 氯化亚硝脲 丁二烯 丙烯酸乳胶外墙涂料 苯偶姻乙醚 硼纤维增强塑料 丁二醇 反应性稀释剂 特丁基-4羟基茴香醚 二丁基羟基甲苯 丁内酯 丙酮-二苯胺高温缩合物 粉末涂料流平剂 甲基丙烯酸丁酯 团状模塑料 氨基树脂皮革鞣剂 氮化硼 新型环氧树脂 β -萘磺酸甲醛低缩合物 己二酸辛苄酯 邻苯二甲酸丁辛酯 双向拉伸(双轴取向)聚丙烯 双酚A
季铵盐胶束的制备及其抗菌性能研究
季铵盐胶束的制备及其抗菌性能研究关雅元;刘畅;孟凡翠;苏玉玲;赵礼礼;罗建斌【摘要】为了研究季铵盐胶束是以胶束的形式抗菌还是以胶束解体后的单体形式与细胞膜结合达到抗菌效果,制备了一种季铵盐表面活性剂,该表面活性剂可以自组装成非交联胶束,还可以通过含有酯键的交联剂获得表面交联胶束.交联胶束在脂肪酶的作用下能解交联形成解交联胶束.利用核磁共振氢谱和动态光散射对合成的表面活性剂进行了分析,通过最低抑菌浓度和透射电子显微镜探讨了胶束的抗菌性能.【期刊名称】《西南民族大学学报(自然科学版)》【年(卷),期】2017(043)003【总页数】7页(P256-262)【关键词】季铵盐;表面交联;胶束;抗菌机理【作者】关雅元;刘畅;孟凡翠;苏玉玲;赵礼礼;罗建斌【作者单位】西南民族大学化学与环境保护工程学院,四川成都610041;西南民族大学化学与环境保护工程学院,四川成都610041;西南民族大学化学与环境保护工程学院,四川成都610041;西南民族大学化学与环境保护工程学院,四川成都610041;西南民族大学化学与环境保护工程学院,四川成都610041;西南民族大学化学与环境保护工程学院,四川成都610041【正文语种】中文【中图分类】O63;R318.08半个多世纪以来,季铵盐抗菌剂(QACs)已经被普遍用于临床和日常环境中.长期以来,人们认为季铵盐抗菌的主要机理是阳离子抗菌剂对细菌细胞膜造成破坏.QACs 作用的一般机理可大致分为六个步骤:(1)吸附在细菌的表面;(2)穿透细胞壁;(3)与细菌细胞膜结合;(4)破坏细菌细胞膜组分;(5)细菌胞内物质泄漏(K+、DNA、RNA等);(6)细菌死亡[1-3].许多研究指出,季铵盐分子的疏水性,吸附性,电荷密度和抑制微生物生理活性构成了定量结构和活性之间的联系[3,4-6].疏水的烷基的长度也会影响季铵盐的抗菌活性,较长的疏水烷基链的季铵盐具有更好的抗菌活性.它的生物活性随碳链的增长而增强然后到达临界值后减弱的现象被称为“截断效应”[7].目前认为季铵盐抗菌与细胞膜的特异性相关,即季铵盐与细胞膜作用改变了细胞膜的通透性.虽然它们的抗微生物作用的确切机制仍不清楚,但它主要归因于它们破坏和崩解细胞膜的能力.许多研究提出两亲分子的临界胶束浓度(CMC)和最小抑菌浓度(MIC)之间存在一定的联系.刘的小组发现,阳离子抗菌剂的MIC接近其CMC[8].一些研究已经指出,QAC的抗菌活性是一种表面活性剂的功能[8-10].因此,假设季铵盐的杀菌过程在形成胶束后作用于细菌的细胞膜.有两种可能的机制,一种是胶束形式,另一种是在胶束解体后以单体形式作用,多数研究认为从胶束中解体的季铵化合物的疏水端插入细胞膜造成细菌死亡的主要原因[11].如果这个假设成立,单季铵盐单体不能通过表面交联剥离和插入细胞膜.因此,交联胶束的杀菌能力将下降甚至消失.本文的目的是探讨QAC的作用机理,以验证其杀菌能力是否取决于胶束的结构. 为了验证杀菌机理,制备了作为表面活性剂的4-十二烷氧基苄基三炔丙基溴化铵和作为交联剂的2-叠氮基乙酸乙酯.通过未交联胶束(NCM),表面交联胶束(SCM)和解交联胶束(DCM)的抗菌作用来验证杀菌的机理.1.1 材料4-十二烷氧基苄基三炔丙基铵依据张的文献制备[11].叠氮化钠(NaN3)和氯化铜(CuCl2)购自中国科龙试剂有限公司.溴丙炔购自上海海曲化工有限公司.2-溴乙醇购自中国阿法埃莎化工有限公司.溴乙酰溴购自成都最佳试剂公司.抗坏血酸钠和脂肪酶购自中国阿拉丁工业公司.红曲霉购自上海灵津精细化工有限公司.胰蛋白酶大豆琼脂培养基(TSA)和胰蛋白酶大豆液体培养基(TSB)购自北京奥博星生物技术有限公司.金黄色葡萄球菌(ATCC No.6538)和大肠杆菌(ATCC No.25922)菌株来自美国模式培养物集存库.1.2 交联剂的合成1.2.1 溴乙酸2-溴乙酯的制备将2-溴乙醇(100 mmol,12.49 g)溶解在二氯甲烷(30 mL)中并装入圆底烧瓶中.随后加入碳酸钾(130 mmol,17.96 g)的水(30 mL)溶液.将烧瓶在冰浴中冷却,向烧瓶中逐滴加入溴乙酰溴(130 mmol,26.24 g)的二氯甲烷(30 mL)溶液.2小时后终止反应,分离有机相,用硫酸镁干燥,过滤并蒸发,得到产物.1.2.2 2-叠氮乙酸乙酯的制备将溴乙酸2-溴乙酯(2.44 g)和叠氮化钠(NaN3,1.95 g)在DMF(30 mL)中的溶液搅拌并在80℃加热48小时,得到最终的糊状溶液.48小时后,将溶液冷却,倒入水(600 mL)中,用乙醚(3×100 mL)萃取.合并有机部分,干燥(MgSO4),过滤并除去溶剂,得到黄色油状2-叠氮基乙酸乙酯.1.2.3 交联剂的表征使用氘代氯仿(CDCl3-d6)作为溶剂测交联剂的核磁氢谱(1H-NMR).1.3 胶束的制备1.3.1 NCM的制备首先将表面活性剂(9.73 mg,0.02 mmol)溶解在2.0 mL去离子水中.然后将溶液在室温下搅拌1分钟,得到透明的胶束溶液.1.3.2 SCM的制备首先将表面活性剂(9.73 mg,0.02 mmol)溶解在2.0 mL去离子水中.然后将溶液在室温下搅拌1分钟,得到透明的胶束溶液.然后滴加溶解于DMF中的交联剂(3.8 mg,0.02 mmol),随后将溶于水的CuCl2(0.0672 mg,0.0005 mmol)和抗坏血酸钠(0.99 mg,0.005 mmol)加入到胶束溶液中.将反应混合物在室温下缓慢搅拌24小时.当反应完成时,将溶液转移到透析膜(MWCO:14000 Da)中,并且用去离子水透析2天[13].1.3.3 DCM的制备0.3%脂肪酶加入到SCM中并搅拌24小时,将胶束移至透析袋(MWCO:14000 Da)中,并且用去离子水透析2天.1.4 胶束的表征使用英国(Malvern Zetasizer Nano,Zen 3690,Malvern)Zetasizeranalyer测量胶束在水溶液中的的粒径和Zeta电位.通过透射电子显微镜(TEM)(Tecnai G2 F20透射电子显微镜,Royal Dutch Philips Electronics Ltd.荷兰)在200Kv的加速电压下观察未交联胶束,表面交联胶束和交联胶束的形态,用磷钨酸2%阴性染色.核磁使用氘代氯仿(CDCl3-d6)作为溶剂,由安捷伦400 MHz核磁共振波普测定仪测试.1.5 NCM的CMC表面活性剂的CMC利用芘作为荧光指示探针,胶束浓度范围为从1.0×10-5到0.2 mg mL-1,最终芘的浓度为5.2×10-6M.在荧光测量之前,芘和胶束的混合溶液避光超声处理4小时.通过荧光计(美国瓦里安公司Cary Eclipse荧光分光光度计)波长范围在285至355 nm,激发和发射波长为372 nm,狭缝为5 nm.1.6 抗菌试验革兰氏阳性菌金黄色葡萄球菌(ATCC No.6538)和革兰氏阴性菌大肠杆菌(ATCCNo.25922)被选作实验菌种.实验菌株在实验前用固体培养基连续传代培养3次.细菌悬浮液配制:将革兰氏阳性菌金黄色葡萄球菌(ATCC No.6538)和革兰氏阴性菌大肠杆菌(ATCC No.25922)在胰蛋白酶大豆液体培养基(TSB)中培养18小时37℃,200 rpm.用TSB将细菌悬浮液稀释至5×106CFU/mL.通过肉汤微量稀释法测量表面交联胶束和未交联胶束的最小抑菌浓度(MIC).在超净实验台上,将100 μL胰蛋白酶(胰蛋白酶)大豆液体培养基(TSB)加入96孔板中,之后将100 μL胶束混合到第一孔中,从第一孔取出100 μL至第二孔,取出100 μL从第二孔至第三孔,以此类推.接着,依照上述方法稀释胶束.最后,将100 μL 细菌悬浮液(5×108CFU/mL)加入每个孔中培养18小时.加入红四氮唑(10 μL,5 mg/mL)于96孔板中显色,观察记录显色情况[14].1.7 微生物的TEM胶束处理后的细菌形貌通过透射电子显微镜测试,仪器型号为FEI Tecnai G2F20FE-TEM.将细菌溶液(1.5 mL)与0.5 mL NCM溶液和SCM溶液一起培养,8小时后,NCM的致死剂量为18.95 ppm,SCM为927.8 ppm.将溶液在5000 rpm下离心10分钟,除去上清液.样品用磷酸盐缓冲液洗涤三次(每次15分钟),然后在不同浓度的乙醇中梯度脱水.2.1 交联剂的合成和表征图3为合成的交联剂的1H-NMR.由图可知δ为4.45 ppm(峰b),3.79 ppm(峰c)和3.48 ppm(峰a)的峰对应溴乙酰溴上的质子.δ为4.23 ppm(峰e),3.74ppm(峰f)和3.41 ppm(峰d)的峰对应2-叠氮基乙酸乙酯的质子.说明交联剂的成功合成.2.2 胶束的表征如图4所示,通过激光粒度散射仪测定的未交联胶束,表面交联胶束和解交联胶束的流体动力学直径分别为190.93 nm,136.02 nm和187.27 nm,具有单峰尺寸分布(图4).由于交联胶束的链段更紧凑,交联的胶束的粒径通常小于其未交联胶束[15].与NCM和DCM胶束分别相比SCM的粒径减小了约54.9和51.25 nm,表明SCM成功交联,DCM成功地解交联.通过胶束的TEM表明,组装的胶束为球形形态,NCM,SCM和DCM的平均直径分别为(图5A、B和C)52 nm、34 nm和48.75 nm.DLS和TEM之间的胶束尺寸的差异可以归因于胶束的脱水状态.2.3 NCM的CMC通过使用芘作为探针的荧光光谱测定CMC.利用吸光度的的比值I337/I333.5随着胶束浓度的变化的拐点即为临界胶束浓度.由图6所得出的NCM的临界胶束浓度为16.89 ppm.2.4 抗菌实验NCM,SCM和DCM胶束的MIC列于表1中.SCM的杀菌能力已经降低.NCM,SCM和DCM胶束的Zeta电位在表1中,DCM的Zeta电位降低到0.753 mV,几乎是中性的.正电荷的值较低表示酯键水解.表面活性剂的正电荷被酯键水解的负电荷中和.DCM的抗菌活性差可能是由电中性的胶束不能吸附到细菌表面导致.2.5 微生物的TEM如图7B所示,在用NCM处理后的微生物的细胞壁和细胞膜受到破坏.如图7C所示,在SCM溶液处理后,其具有较弱的杀菌效果.这种现象表明,在细菌体内的脂肪酶的存在下交联胶束的酯键发生水解,因而其具有很小的抗菌活性.本文研究了季铵盐胶束的抗菌性能,通过合成一种水溶性的表面活性剂,和具有在脂肪酶存在的条件下可以断键的酯基交联剂,制备了NCM、SCM和DCM.通过对材料的核磁和对胶束的DLS、Zeta电位,TEM等表征证明了材料的成功合成和胶束的成功制备.通过MIC和与胶束共同培养的大肠杆菌的TEM实验,证明了季铵盐胶束具有很强的抗菌性.交联胶束的交联剂在细菌的脂肪酶存在的情况下会发生断键,实验中可以看出其对脂肪酶的刺激响应性.本文为探究季铵盐胶束的抗菌方式的机理提供了一个新的想法和方案.【相关文献】[1]TISCHER M,PRADEL G,OHLSEN K,et al.Quaternary ammonium salts and their antimicrobial potential:targets or nonspecific interactions?[J]. ChemMedChem,2012,7(1):22-31.[2]CHEN C Z,BECK-TAN N C,DHURJATI P,et al.Quaternary ammonium functionalized poly(propylene imine)dendrimers as effective antimicrobials: Structure-activitystudies[J].Biomacromolecules,2000,1(3):473-480.[3]GILBERT P,MOORE L E.Cationic antiseptics:diversity of action under a common epithet[J].Journal of applied microbiology,2005,99(4):703-715.[4]IOANNOU C J,HANLON G W,DENYER S P.Action of disinfectant quaternary ammonium compounds against Staphylococcus aureus[J].Antimicrobial agents and chemotherapy,2007,51(1):296-306.[5]MÜLLER G,KRAMER A.Biocompatibility index of antiseptic agents by parallel assessment of antimicrobial activity and cellular cytotoxicity[J].Journal of Antimicrobial Chemotherapy,2008,61(6):1281-1287.[6]KÜGLER R,BOULOUSSA O,RONDELEZ F.Evidence of a charge-density threshold for optimum efficiency of biocidal cationic surfaces[J].Microbiology,2005,151(5):1341-1348.[7]BALGAVý P,DEVÍNSKY F.Cut-off effects in biological activities ofsurfactants[J].Advances in colloid and interface science,1996,66:23-63.[8]LIU L,XU K,WANG H,et al.Self-assembled cationic peptide nanoparticles as an efficient antimicrobial agent[J].Nature Nanotechnology,2009,4(7): 457-463.[9]MASSI L,GUITTARD F,GERIBALDI S,et al.Antimicrobial properties of highly fluorinated bis-ammonium salts[J].International Journal of Antimicrobial Agents,2003,21(1):20-26.[10]MASSI L,GUITTARD F,LEVY R,et al.Enhanced activity of fluorinated quaternary ammonium surfactants against Pseudomonas aeruginosa[J].European Journal of Medicinal Chemistry,2009,44(4):1615-1622.[11]ROCCHIGIANI L,BELLACHIOMA G,CIANCALEONI G,et al.Anion‐Dependent Tendency of Di-Long-Chain Quaternary Ammonium Salts to Form Ion Quadruples and Higher Aggregates in Benzene[J].ChemPhysChem,2010,11(15):3243-3254.[12]ZAPATA P A,PALZA H.Polyethylene‐based Bio‐a nd Nanocomposites for PackagingApplications[J].Polyethylene‐Based Biocomposites and Bionanocomposites,2016:365-404.[13]ZHANG S,ZHAO Y.Facile synthesis of multivalent water-soluble organic nanoparticles via“surface clicking”of alkynylated surfactant micel les[J]. Macromolecules,2010,43(9):4020-4022.[14]NEDERBERG F,ZHANG Y,TAN J P K,et al.Biodegradable nanostructures with selective lysis of microbial membranes[J].Nature chemistry,2011,3 (5):409-414. [15]WU Y,CHEN W,MENG F,et al.Core-crosslinked pH-sensitive degradable micelles:a promising approach to resolve the extracellular stability versus intracellular drug release dilemma[J].Journal of Controlled Release,2012,164(3):338-345.。
汽车功能中英文对照表
205 DOOR
DR
206 DOUBLE
DBL
207 DOWEL
DWL
208 DRAGLINK
D/LINK
209 DRAWING
DWG
210 DRAWING CHANGE NOTICE
DCN
211 DRAWN
DWN
212 DRIVE
DRV
213 DRIVE PINION
D/PINION
214 DRIVER SEAT
86 CENTER
CTR
87 CENTERLINE
ቤተ መጻሕፍቲ ባይዱ
C/L
88 CENTERLINE OF FRONT SPRING EYE FSE
89 CENTER OF GRAVITY
CG
90 CENTER PILLAR
C/PLR
91 CENTER TO CENTER
C TOC
92 CENTER WEIGHT
C/WT
N0
1 ABSORBER
英文
2 ACCELERATOR
3 ACCELERATOR
4 ACCUMULATOR
5 ACTUATING
6 ACTUATOR
7 ADAPTATION
8 ADAPTOR
9 ADDENDUM
10 ADJUST
11 ADJUSTMENT
12 ADVANCE
13 AIR CLEANER
园周 等级 分类 滤水器 清除(交换) 螺帽 顺时针,右转的 截止 离合器 驾驶舱 共用
准直(平行) 圆柱 结合 燃烧(氧化) 空流器 结束整流器 间隔(舱) 完全的,圆满的 完全, 成分,构造 压缩 压缩机 集中性的 蓄电池 导管,水管 结合,连接
IEEE标准中综保数字代码的含义
52
ACcircuit breaker
交流断路器
53
exciter orDCgenerator relay
励磁机或直流发电机继电
54
turning gear engaging device
盘车装置啮合元件
55
power factor relay
功率因数继电器
56
field application relay
DEVICE CODES(继电保护代码)
Code
英文描述English Description
Chinese meaning中文含义
1
master elemen
主要元件
2
time-delay starting or closing relay
延时起动或闭合继电器
3
checking or interlocking relay
60
Voltageorcurrent balance relay
电压或电流平衡继电器
60FL
VTFuse“废油斯”Failure“费列”故障
PT保险丝熔断
61
density“但斯特”密度swith or sensor
密度开关或探头
62
time-delay stopping or openingrelay
过流/低压保护
50/51/67
Definite“带飞奈特”确切的Time Overcurrent Directional“带2可深脑”方向的、定向的
定时方向过流保护
50/51
Instantaneous element“埃勒累门特”元素、要素、原理and Over current
FOSAN富信电子 二级管 BAL99-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAL99SOT-23Switching Diode 开关二极管▉Internal Configuration内部结构▉Features 特点Characteristic 特性参数Symbol 符号Max 最大值Unit 单位Power dissipation 耗散功率P D (Ta=25℃)225mW Forward Current 正向电流I F 200mA Reverse Voltage 反向电压V R 75VJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■DeviceMarking 产品打标BAL99=JF■Electrical Characteristics 电特性(TA =25℃unless otherwise noted 如无特殊说明,温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100uA)V (BR)75—V Reverse Leakage Current(V R =20V)反向漏电流(V R =75V)I R—252.5nA µA Forward V oltage(I F =1mA)正向电压(I F =10mA)(I F =50mA)(I F =150mA)V F —0.7150.8551.01.25VDiode Capacitance 二极管电容(V R =0V,f=1MHz)C T—2pF Reverse Recovery Time 反向恢复时间T rr—4nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAL99■Typical Characteristic Curve典型特性曲线Figure1:Forward Characteristics Figure2:Leakage CurrentFigure3:Capacitance Characteristics Figure4:Power Derating CurveANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAL99■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
莫克斯 EDR-G9010 系列产品介绍说明书
EDR-G9010Series8GbE copper+2GbE SFP multiport industrial secure routerFeatures and Benefits•Developed according to the IEC62443-4-1and compliant with the IEC62443-4-2industrial cybersecurity standards•10-port Gigabit all-in-one firewall/NAT/VPN/router/switch•Industrial-grade Intrusion Prevention/Detection System(IPS/IDS)•Visualize OT security with the MXsecurity management software•Secure remote access tunnel with VPN•Examine industrial protocol data with Deep Packet Inspection(DPI)technology•Easy network setup with Network Address Translation(NAT)•RSTP/Turbo Ring redundant protocol enhances network redundancy•Supports secure boot for checking system integrity•-40to75°C operating temperature range(-T model)CertificationsIntroductionThe EDR-G9010Series is a set of highly integrated industrial multi-port secure routers with firewall/NAT/VPN and managed Layer2switch functions.These devices are designed for Ethernet-based security applications in critical remote control or monitoring networks.These secure routers provide an electronic security perimeter to protect critical cyber assets including substations in power applications,pump-and-treat systems in water stations,distributed control systems in oil and gas applications,and PLC/SCADA systems in factory automation.Furthermore, with the addition of IDS/IPS,the EDR-G9010Series is an industrial next-generation firewall,equipped with threat detection and prevention capabilities to further protect critical infrastructure from cybersecurity attacks.Defend Against Malicious Threats With Advanced Cybersecurity FeaturesThe EDR-G9010Series’embedded firewall uses policy rules to control network traffic between trusted zones while Network Address Translation (NAT)shields the internal network from unauthorized access by outside hosts.The Virtual Private Networking(VPN)functionality further provides users with secure communication tunnels when accessing the private network from the public Internet.To help protect your OT assets from cyberattacks,the EDR-G9010Series supports Deep Packet Inspection(DPI)to examine the data portion of network packets for various OT-specific protocols.Simplify Configurations With the User-friendly Interface and Quick SettingsThe EDR-G9010Series’Setup Wizard provides an easy way for users to set up WAN,LAN,and Bridge ports for routing functionality in just four steps.In addition,the object-based firewall management feature gives engineers a simple way to configure and maintain firewall filtering for IP addresses and subnets,network services,industrial application services,and user-defined services.Industrial-grade Design to Ensure Uninterrupted Network ConnectivityThe EDR-G9010Series’rugged hardware makes these secure routers ideal for harsh industrial environments,featuring wide-temperature models that are built to operate reliably in hazardous conditions and extreme temperatures of-40up to75°C.Moreover,the EDR-G9010Series supports comprehensive Layer2and Layer3redundancy mechanisms to ensure that your network stays connected at all times.Virtual Patching and Intelligent Threat ProtectionPatching remains a major challenge in OT environments because OT applications cannot afford interrupting operations by shutting down systems to apply patches.Virtual patching technology can help complement existing patch management processes by shielding known and unknown vulnerabilities.In addition,the EDR-G9010features intelligent IPS functionality for continuous protection against cyberthreats which uses pattern-based detection to identify and block known attacks.SpecificationsInput/Output InterfaceAlarm Contact Channels Resistive load:1A@24VDCButtons Reset buttonDigital Input Channels+13to+30V for state1-30to+3V for state0Max.input current:8mAEthernet Interface10/100/1000BaseT(X)Ports(RJ45connector)81000BaseSFP Slots2Standards IEEE802.1Q for VLAN TaggingIEEE802.3for10BaseTIEEE802.3ab for1000BaseT(X)Static Port TrunkIEEE802.3u for100BaseT(X)IEEE802.3x for flow controlIEEE802.3z for1000BaseSX/LX/LHX/ZXIEEE802.1X for authenticationEthernet Software FeaturesBroadcast Forwarding IP directed broadcast,broadcast forwarding Management Back Pressure Flow ControlDDNSDHCP Server/ClientWeb Console(HTTP/HTTPS)LLDPQoS/CoS/ToSSNMPv1/v2c/v3TelnetTFTPHTTPSSSHRedundancy Protocols RSTPSTPTurbo Ring v2Routing Throughput:350K packets per second(max.1500Mbps) Routing Table Max.4K routing rulesConcurrent Connections Max.400KConnections Per Second Max.20KRouting Redundancy VRRPSecurity Secure BootIPsecL2TP(server)RADIUSTrust access controlTime Management NTP Server/ClientSNTPUnicast Routing OSPFRIPV1/V2Static RouteMulticast Routing Static RouteFilter IGMP v1/v2/v3Switch PropertiesVLAN ID Range VID1to4094IGMP Groups256Max.No.of VLANs16LED InterfaceLED Indicators PWR1,PWR2,STATE,MSTR/H.TC,CPLR/T.TC,VRRP/HA,VPN,USB DoS and DDoS ProtectionTechnology ARP-FloodFIN ScanICMP-DeathNEWWithout-SYN ScanNMAP-ID ScanNMAP-Xmas ScanNull ScanSYN/FIN ScanSYN/RST ScanSYN-FloodXmas ScanFirewallFilter DDoSEthernet protocolsICMPIP addressMAC addressPortsStateful Inspection Router firewallTransparent(bridge)firewallDeep Packet Inspection DNP3EtherNet/IPIEC60870-5-104IEC61850MMSModbus TCPModbus UDPOmron FINSSiemens S7Comm.Additional protocols will be supported through future firmware updates. Intrusion Prevention System Requires an additional license.Throughput Max.350K packets per second(max.1500Mbps)IPsec VPNAuthentication MD5and SHA(SHA-256)RSA(key size:1024-bit,2048-bit)X.509v3certificateConcurrent VPN Tunnels Max.250IPsec VPN tunnelsEncryption DES3DESAES-128AES-192AES-256Protocols IPsecL2TP(server)PPTP(client)Throughput Max.300Mbps(Conditions:AES-256,SHA-256) NATFeatures1-to-1N-to-1NAT loopbackPort forwardingReal-Time Firewall/VPN Event LogEvent Type Firewall eventVPN eventMedia Local storageSNMP TrapSyslog serverSerial InterfaceConsole Port RS-232(TxD,RxD,GND),3-pin(115200,n,8,1) Connector USB Type-CPower ParametersConnection Removable terminal blockInput Voltage EDR-G9010-VPN-2MGSFP(-T)models:12/24/48VDC(DNV-certified for24VDC)EDR-G9010-VPN-2MGSFP-HV(-T)models:120/240VDC/VACOperating Voltage non-HV(-T)models:9.6to60VDC-HV(-T)models:88to300VDC,90to264VACInput Current EDR-G9010-VPN-2MGSFP(-T)models:1.51A@12VDC0.70A@24VDC0.35A@48VDCEDR-G9010-VPN-2MGSFP-HV(-T)models:0.28A@120VAC0.18A@240VAC0.15A@120VDC0.08A@240VDCReverse Polarity Protection SupportedPhysical CharacteristicsHousing MetalDimensions EDR-G9010-VPN-2MGSFP(-T)models:58x135x105mm(2.28x5.31x4.13in)EDR-G9010-VPN-2MGSFP-HV(-T)models:64x135x105mm(2.52x5.31x4.13in) Weight EDR-G9010-VPN-2MGSFP(-T)models:1030g(2.27lb)EDR-G9010-VPN-2MGSFP-HV(-T)models:1150g(2.54lb)Installation DIN-rail mounting(DNV-certified)Wall mounting(with optional kit)Environmental LimitsOperating Temperature Standard Models:-10to60°C(14to140°F)Wide Temp.Models:-40to75°C(-40to167°F)EDR-G9010-VPN-2MGSFP(-T)models:DNV-certified for-25to70°C(-13to158°F) Storage Temperature(package included)-40to85°C(-40to185°F)Ambient Relative Humidity5to95%(non-condensing)Standards and CertificationsSafety IEC62368-1UL62368-1IEC60950-1UL60950-1EMC EN55032/35EMI CISPR32,FCC Part15B Class AEMS IEC61000-4-2ESD:Contact:8kV;Air:15kVIEC61000-4-3RS:80MHz to1GHz:20V/mIEC61000-4-4EFT:Power:4kV;Signal:4kVIEC61000-4-5Surge:Power:2kV;Signal:4kVIEC61000-4-6CS:10VIEC61000-4-8PFMFIndustrial Cybersecurity IEC62443-4-1IEC62443-4-2Railway EDR-G9010-VPN-2MGSFP(-T)models:EN50121-4Traffic Control EDR-G9010-VPN-2MGSFP(-T)models:NEMA TS2Maritime EDR-G9010-VPN-2MGSFP(-T)models:IEC60945,DNVPower Substation IEEE1613IEC61850-3Edition2.0Hazardous Locations EDR-G9010-VPN-2MGSFP(-T)models:ATEX,Class I Division2Shock IEC60068-2-27Freefall IEC60068-2-32Vibration IEC60068-2-6MTBFTime EDR-G9010-VPN-2MGSFP(-T)models:1,080,807hrsEDR-G9010-VPN-2MGSFP-HV(-T)models:509,714hrsStandards Telcordia(Bellcore),GBWarrantyWarranty Period5yearsDetails See /warrantyPackage ContentsDevice1x EDR-G9010Series secure routerCable1x DB9female to USB Type-CInstallation Kit4x cap,plastic,for RJ45port2x cap,plastic,for SFP slotDocumentation1x quick installation guide1x warranty cardNote SFP modules need to be purchased separately for use with this product. DimensionsStandard ModelsHV ModelsOrdering InformationModel Name10/100/1000BaseT(X)Ports(RJ45Connector)1000BaseSFPSlotsFirewall NAT VPN Input VoltageOperatingTemp.EDR-G9010-VPN-2MGSFP 82✓✓✓12/24/48VDC-10to60°C(DNV-certified)EDR-G9010-VPN-2MGSFP-T 82✓✓✓12/24/48VDC-40to75°C(DNV-certifiedfor-25to70°C)EDR-G9010-VPN-2MGSFP-HV 82✓✓✓120/240VDC/VAC-10to60°CEDR-G9010-VPN-2MGSFP-HV-T 82✓✓✓120/240VDC/VAC-40to75°CAccessories(sold separately)Storage KitsABC-02-USB Configuration backup and restoration tool,firmware upgrade,and log file storage tool for managedEthernet switches and routers,0to60°C operating temperatureABC-02-USB-T Configuration backup and restoration tool,firmware upgrade,and log file storage tool for managedEthernet switches and routers,-40to75°C operating temperatureSFP ModulesSFP-1G10ALC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for10km transmission;TX1310nm,RX1550nm,0to60°C operating temperatureSFP-1G10ALC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for10km transmission;TX1310nm,RX1550nm,-40to85°C operating temperatureSFP-1G10BLC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for10km transmission;TX1550nm,RX1310nm,0to60°C operating temperatureSFP-1G10BLC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for10km transmission;TX1550nm,RX1310nm,-40to85°C operating temperatureSFP-1G20ALC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for20km transmission;TX1310nm,RX1550nm,0to60°C operating temperatureSFP-1G20ALC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for20km transmission;TX1310nm,RX1550nm,-40to85°C operating temperatureSFP-1G20BLC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for20km transmission;TX1550nm,RX1310nm,0to60°C operating temperatureSFP-1G20BLC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for20km transmission;TX1550nm,RX1310nm,-40to85°C operating temperatureSFP-1G40ALC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for40km transmission;TX1310nm,RX1550nm,0to60°C operating temperatureSFP-1G40ALC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for40km transmission;TX1310nm,RX1550nm,-40to85°C operating temperatureSFP-1G40BLC WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for40km transmission;TX1550nm,RX1310nm,0to60°C operating temperatureSFP-1G40BLC-T WDM-type(BiDi)SFP module with11000BaseSFP port with LC connector for40km transmission;TX1550nm,RX1310nm,-40to85°C operating temperatureSFP-1GEZXLC SFP module with11000BaseEZX port with LC connector for110km transmission,0to60°C operatingtemperatureSFP-1GEZXLC-120SFP module with11000BaseEZX port with LC connector for120km transmission,0to60°C operatingtemperatureSFP-1GLHLC SFP module with11000BaseLH port with LC connector for30km transmission,0to60°C operatingtemperatureSFP-1GLHLC-T SFP module with11000BaseLH port with LC connector for30km transmission,-40to85°C operatingtemperatureSFP-1GLHXLC SFP module with11000BaseLHX port with LC connector for40km transmission,0to60°C operatingtemperatureSFP-1GLHXLC-T SFP module with11000BaseLHX port with LC connector for40km transmission,-40to85°Coperating temperatureSFP-1GLSXLC SFP module with11000BaseLSX port with LC connector for1km/2km transmission,0to60°Coperating temperatureSFP-1GLSXLC-T SFP module with11000BaseLSX port with LC connector for1km/2km transmission,-40to85°Coperating temperatureSFP-1GLXLC SFP module with11000BaseLX port with LC connector for10km transmission,0to60°C operatingtemperatureSFP-1GLXLC-T SFP module with11000BaseLX port with LC connector for10km transmission,-40to85°C operatingtemperatureSFP-1GSXLC SFP module with11000BaseSX port with LC connector for300m/550m transmission,0to60°Coperating temperatureSFP-1GSXLC-T SFP module with11000BaseSX port with LC connector for300m/550m transmission,-40to85°Coperating temperatureSFP-1GZXLC SFP module with11000BaseZX port with LC connector for80km transmission,0to60°C operatingtemperatureSFP-1GZXLC-T SFP module with11000BaseZX port with LC connector for80km transmission,-40to85°C operatingtemperatureSFP-1GTXRJ45-T SFP module with11000BaseT port with RJ45connector for100m transmission,-40to75°C operatingtemperatureMounting KitsWK-35-01Wall-mounting kit with2plates(35x44x2.5mm)and6screwsWK-46-01Wall-mounting kit,2plates,8screws,46x66.8x2mmSoftwareLIC-MXsecurity-NEW-1Y-XN-SR1-year MXsecurity license with customizable node quantity(minimum1node)LIC-MXsecurity-NEW-XM-XN-DMR MXsecurity license with customizable duration and node quantity(minimum1month,minimum1node)LIC-MXsecurity-RENEW-1Y-XN-SR1-year MXsecurity renewal license with customizable node quantity(minimum1node)LIC-MXsecurity-RENEW-XM-XN-DMR MXsecurity renewal license with customizable duration and node quantity(minimum1month, minimum1node)LIC-MXsecurity-ADD-1Q-XN-SR3-month MXsecurity add-on license with customizable node quantity(minimum1node)LIC-MXsecurity-ADD-2Q-XN-SR6-month MXsecurity add-on license with customizable node quantity(minimum1node)LIC-MXsecurity-ADD-3Q-XN-SR9-month MXsecurity add-on license with customizable node quantity(minimum1node)LIC-MXsecurity-ADD-4Q-XN-SR1-year MXsecurity add-on license with customizable node quantity(minimum1node)LIC-MXsecurity-ADD-XM-XN-DMR MXsecurity add-on license with customizable duration and node quantity(minimum1month,minimum1node)LIC-IPS-MXsecurity-NEW-1Y-XN-SR1-year IPS license for MXsecurity with customizable node quantity(minimum1node)LIC-IPS-MXsecurity-NEW-XM-XN-DMR IPS license for MXsecurity with customizable duration and node quantity(minimum1month,minimum 1node)LIC-IPS-MXsecurity-RENEW-1Y-XN-SR1-year IPS renewal license for MXsecurity with customizable node quantity(minimum1node)LIC-IPS-MXsecurity-RENEW-XM-XN-DMR IPS renewal license for MXsecurity with customizable duration and node quantity(minimum1month, minimum1node)LIC-IPS-MXsecurity-ADD-1Q-XN-SR3-month IPS add-on license for MXsecurity with customizable node quantity(minimum1node) LIC-IPS-MXsecurity-ADD-2Q-XN-SR6-month IPS add-on license for MXsecurity with customizable node quantity(minimum1node) LIC-IPS-MXsecurity-ADD-3Q-XN-SR9-month IPS add-on license for MXsecurity with customizable node quantity(minimum1node) LIC-IPS-MXsecurity-ADD-4Q-XN-SR1-year IPS add-on license for MXsecurity with customizable node quantity(minimum1node)LIC-IPS-MXsecurity-ADD-XM-XN-DMR IPS add-on license for MXsecurity with customizable duration and node quantity(minimum1month, minimum1node)LIC-IPS-DEVICE-NEW-1Y-1N-MR1-year device-based IPS licenseLIC-IPS-DEVICE-RENEW-1Y-1N-MR1-year device-based IPS renewal license©Moxa Inc.All rights reserved.Updated Aug15,2023.This document and any portion thereof may not be reproduced or used in any manner whatsoever without the express written permission of Moxa Inc.Product specifications subject to change without notice.Visit our website for the most up-to-date product information.。
PureProteome Protein A和Protein G磁性珠粒体数据表说明书
PureProteome Protein A and Protein G magnetic beads are a powerful system toisolate antibodies faster, easier, and with more reproducibility then ever before. PureProteome Protein A and Protein G magnetic beads purify your sample with the highest binding capacity of any magnetic beads available. You can achieve reproducible results in both immunoprecipitation and serum depletion assays.PureProteome ™ Protein A and Protein G Magnetic BeadsEliminate Variability. Maximize Recovery.AdvantagesHigh capacity: More than 6x the • binding capacity of competitive magnetic beads.Bind 1.5-3.5 µg of rabbit IgG –per µL of suspensionConsistent results: Total removal • of buffers with no sample loss Fast processing time: Bead • immobilization occurs in seconds Ideal for immunoprecipitation and • serum depletion assaysEconomical: Up to half the price of • competitive magnetic beads2Rabbit Serum (50 µL) diluted with PBS was incubated withProtein G magnetic beads per manufacturer’s instructions. Thedepleted rabbit serum samples were separated by SDS-PAGEand the gel stained with Coomassie Blue using Millipore andcompetitor magnetic beads. Lane 1: input material, lanes 2, 4, 6,8: depleted samples, lanes 3, 5, 7, 9: eluted samples.A whole-cell lysate (300 mg of protein in 500 µL) preparedfrom A431 cells was incubated in the presence of 5 µg of amouse monoclonal antibody specific for the tumor suppressorprotein/transcription factor p53 for 2 hours at 4 °C withgentle mixing. The antigen-antibody complexes were thenincubated for 10 minutes at room temperature with 50 µL ofpre-washed PureProteome Protein A magnetic beads followedby washes with PBS to remove any unbound protein. Theimmunoprecipitated p53 protein was eluted from the beadsby incubation in the presence of gel loading buffer for 10minutes at 70 °C. Ten microliter samples of the cell lysatestarting material (S), cell lysate that had been incubated in thepresence of the PureProteome magnetic beads (FT) and thep53-containing eluted fraction (E) were subjected to SDS-PAGE and western blot analysis using Immobilon-P blottingmembrane. The immunoreactive p53 protein was visualizedusing the SNAP i.d.™ Protein Detection System (antibodies:rabbit anti-p53, HRP-conjugated goat anti-rabbit) and ImmobilonHRP Western Substrate. The results shown demonstratequantitative precipitation of the p53 protein from the samples. HigH BinDing CApACitywitH RApiD SAMplE pRoCESSingTrust Millipore to develop a superior magnetic bead systemoptimized to advance your research. Millipore’s process forparamagnetizing porous silica particles enables us to providemagnetic beads with the highest binding capacity whencompared to other magnetic purification systems.With a binding capacity 6x greater then competitive beads,PureProteome Protein A and Protein G magnetic beadsprovide the greatest percentage of immunoglobulin (IgG)depletion from serum samples with low non-specific binding.get up to 8X greater depletion in half the time. Superior magnetic bead performancefrom the experts in porous media3CoMplEtE RECoVERy witH REpRoDuCiBlE RESultSMillipore’s new PureProteome magnetic beads ensure the rapid and reproducible isolation of proteins. Unlike conventional methods that require centrifugation to pellet followed by careful aspiration to avoid sample loss, PureProteome magnetic beads are isolated using a magnetic rack. This allows for the total removal of buffers for complete recovery of beads with no sample dilution.Eliminate variabilitywhile maximizing recovery.FASt AnD EASyWhile traditional methods require minutes of harsh centrifuga-tion to isolate your sample, the PureProteome magnetic bead system isolates proteins in seconds using a magnetic rack right on your bench. A magnetic field gently immobilizes the highly-visible beads on the side of the tube. This allows quick and easy aspiration and eliminates the need for a centrifugation step. With the increased reaction kinetics of the Pure Proteome magnetic beads, incubations can be performed in minutes.Immunoprecipitation reactions that may require up to 18 hours of incubation with beads using conventional methods can now be accomplished in as little as 10 minutes.Dramatically reduce your sample preparation time with pureproteome magnetic beads.oRDERing inFoRMAtionDescription Qty/pk Catalogue no. PureProteome Magnetic BeadsPureProteome Protein A Magnetic Beads10 mL2 x 1 mLLSKMAGA10LSKMAGA02PureProteome Protein G Magnetic Beads10 mL2 x 1 mLLSKMAGG10LSKMAGG02Pure Proteome Nickel Magnetic Beads10 mL2 x 1 mLLSKMAGH10LSKMAGH02Magna GrIP™ Rack20-400Description nMwl*Qty/pk Catalogue no. Protein Concentration (< 4 mL samples)Amicon® Ultra-4Centrifugal Filter Unit withUltracel®-3 membrane324UFC800324Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-10membrane1024UFC801024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-30membrane3024UFC803024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-50membrane5024UFC805024Amicon Ultra-4 CentrifugalFilter Unit with Ultracel-100membrane10024UFC810024 * Nominal Molecular Weight Limit or membrane cut-off in kDaDescription Qty/pk Catalogue no. Western BlottingSNAP i.d.™ Protein Detection SystemIncludes hardware base, blot holdersample pack, blot roller, vacuum tubinguser guide.1 kit WBAVDBASEDescription Size Qty/pk Catalogue no. Immobilon®-P Transfer membrane (0.45 µm)Cut Sheet8 x 10 cm10IPVH0810010 x 10 cm10IPVH1010020 x 20 cm10IPVH20200 Roll26.5 x 375 cm1IPVH00010 Immobilon-PSQ Transfer membrane (0.2 µm)Cut Sheet8 x 10 cm10ISEQ0810010 x 10 cm10ISEQ1010020 x 20 cm10ISEQ20200 Roll26.5 x 375 cm 1 ISEQ00010 Immobilon-FL Transfer membrane (0.45 µm)Cut Sheet10 x 10 cm 10 IPFL10100 Roll26.5 x 3.75 cm 1 IPFL00010 Blotting SandwichesImmobilon-PBlotting Sandwich7 x 8.4 cm 20 IPSN078528.5 x 13 cm 20 IPSN08132 Description Qty/pk Catalogue no. Western Blot Detection SubstratesImmobilon WesternChemiluminescent HRP Substrate100 mL WBKLS0100Immobilon WesternChemiluminescent AP Substrate100 mL WBKDS0100Spray & Glow™ ECL Western BlottingDetection System100 mL17-373 Visit for additional pack sizes/offices to plACE An oRDER oR RECEiVE tECHniCAl ASSiStAnCEVisit: /supportMillipore, Ultracel, Immobilon, and Amicon are registered trademarks of Millipore Corporation. The M mark, Advancing Life Science Together, PureProteome, Magna GrIP, SNAP i.d., and Spray & Glow are trademarks of Millipore Corporation.Lit. No. DS1060EN00 11/08 BP-GEN-08-01172Printed in the U.S.A.© 2008 Millipore Corporation, Billerica, MA 01821 U.S.A. All rights reserved.。
G5LE_97资料
G5LE! " # $ % & ' ( ! !& )* !) &+, !-!. !! !!.* ! -DC12Part number!! " # # ! # $% & '( G5LE-1G5LE-1-ACD G5LE-1-ASI ' ) G5LE-1A G5LE-1A-ACD G5LE-1A-ASI ' '( G5LE-14G5LE-14-ACD G5LE-14-ASI ' ) G5LE-1A4G5LE-1A4-ACD G5LE-1A4-ASIMODEL NUMBER LEGENDG5LE-12343.Sealing) % &* ' 561.Number of Poles4.Pre-soldered Terminal Configuration) '!+, , '!+6.Approved Standards) - ! # ./- ! +$ ---2.Contact Form) '(# ' ) 5.Contact Material) ##!( # ! # $# $G5LEG5LECOIL DATA, 0/(! /(!1/(!2/(! 3/(!3*/(!*4/(!, 01 * #52 * #11 5 #* #00 0 # 1 5 #4 00 #! 331026366016**65167 5 8 " & 7 68 "7 & 068 " 56 ! 4 % 568 " 30 ! 50 % ' 9 # & *66 :)"30 ! 50 % 9 " 68 3 016 : ! 7, )"CONTACT DATA, ; , 6# 36/#!<4# 06/(!, = 6#7 & 9 3 6/#! 3 /(!7 & 9 #! 6# (!4#7 & 9 =366/# 3*6:766 # /(!CHARACTERISTICS! 66 & 6 & , &+ # & 6 1 , # & 5 3 7 & 9 "7 4 666 ?" > =466 ? $667 66/(!( 5 6/#! 6?16@A " 9 " =3 666/#! 6?16@A " 9 $ 9 * 66/ 9 / ( 6 @A 7 " 6 @A B ( 666 ? & 66 7 " 66 ? & 6" & =7 6 666 666 4 666 ? = 66 666 466 ? #C3 ! 4 ! C 0 % 4 % # =0 8 4 8:# & 3 6 *3 AG5LEG5LECHARACTERISTIC DATAMax.Switching Capacity G5LEAmbient Temperature vs.Maximum Voltage# !9 / Life Expectancy G5LE9 #! " #$$ $ $%&/-G5LE-1D#' $ () $ " *$ $ &#' $ () &$ " *$ $ #$ $ # $ $ #$ $ #$ #' $ () $ " *$ $ #$ $ # $ $ #G5LE-14D#' $ () $ " *$ $ &#' $ () $ " *$ $ #' $ () &$ " *$ $ #$ $ # $ $ #$ $ #$ $ # $ $ #$ #元器件交易网G5LEG5LETerminal Arrangement/Internal Connections (Bottom View)Mounting Holes (Bottom View)SPDT6 SPST-NO SPDTSPST-NO+ $ $,+ $ $,Terminal Arrangement/Internal Connections (Bottom View)Mounting Holes (Bottom View)SPDT6 SPST-NO SPDTSPST-NO+ $ $,+ $ $,STANDARDREVERSE$ $ #$ $ #$ $ $ # $ &#$ $ &#$ $ # $ $ &# $ $ &#$ $ #$ #$ $$ # $ $ &# $ $ &#$ $ #$ #$ $$ # $ $ &#$ $ &#$$ # $ #$ ) : B " 9$ #$ # $ #$ # $ #$ #$ #$ #APPROVALSUL325,UL508,UL1409,UL1950(File No.E41643)' ! !0 *4/(!# 3 6/#! # 06/(!3 /# 36/#! ' ( 66 666 = # 3 /#! ' 06E 56 !4 % )?4 36/#! 6 666 =*% # * ,# 36/#! 66 666 = ?3 ) %%# 6 ! 33 % % # 06 ,# 36/#!7 " 66 666 = / 0 36/#!)!? 6 36/#! 6 666 =3% # * ,# 36/#! 66 666 = ?3 ) %%# 6 ! 33 % 6# 3 6/#! 4# 06/(! )?1 36/#! 6 666 = ?0 3 /#! 06E 56 ! 4 % )!?4 36/#! 6 666 =) = 9 "" &F# $G /元器件交易网G5LEG5LECSA C22.2NO.14(File No.LR34815)' ! !0 *4/(!# 3 6/#! # 06/(!3 /# 36/#! ' ( 66 666 = # 3 /#! ' 06E 56 !4 % )?4 36/#! 6 666 = / 0)!? 6 36/#! 6 666 = 6# 3 6/#! 4# 06/(!1# 355/#! 66E )?1 36/#! 6 666 = ?0 3 /#! 56 ! 4 % 06E )!? 6 36/#! 6 666 =)= 9 "" &F# $G /TÜV (VDE File No.R9151267)' !!0 1 2 3 3*/(!3# 3 6/#! ;6 * 3 # 3 6/#! # 06/(! 3 # 3 6/#! ;6 * # 3 6/#! 4# 06/(!! ) !, H12?25" I 9' - #OMRON ELECTRONICS,INC. ! ( $ 16 50NOTE:DIMENSIONS SHOWN ARE IN MILLIMETERS.To convert millimeters to inches divide by 25.4.1-800-55-OMRONOMRON CANADA,INC.44 7 #7 + /4416-286-6465元器件交易网Omron Europe B.V. EMA-ISD, tel:+31 23 5681390, fax:+31 23 5681397, /ema。
汽车常用英文术语
排放软管 后端 前端 发动机支架 发动机舱线束 发动机安装减震垫 排气管支架
DRIP-FDR FDR-FR STAY ASSY-FR FDR TUBE ASSY-FILLER BASE-FUEL FILLER BMPR-FUEL FILLER HLDR FUEL FILTER
FIN ASSY-RR PLR LH FIN-HUD FIN-INST A ROD-BATFIX SCR-FIX STRG LOCK FLG-AIR INT FLOOR SIDE ASSY-RR LH FLOOR-FR
P1/8
示例中文
作动器及电控装置总成 左前门执行器
右安全带调节器 气囊总成 空调控制器 自动报警
GPS天线 天线放大器
雨刮摇臂总成 烟灰盒总成 支架总成 总装车间 下安装板罩 自动变速箱 A/T冷却软管 变速器总成 后轴 后排座椅靠背支架 倒車摄像头总成
平衡块 蓄电池压板 行李箱扭杆
蓄电池固定拉杆 蓄电池托盘 轴承总成 安全带加强件 压缩机皮带 前座椅安全带 雨刮叶片总成 发动机安装支架 保险丝盒盖总成 鼓风机总成 鼓风机罩 车身线束 方向盘总成 前左车身侧围密封条 右侧围外板 焊接螺栓 螺栓—吊耳 接头螺栓 真空助力器 真空管 顶盖中弓形梁 继电器盒罩总成 资料盒盖总成 左前座椅安装支架 拉手支架 左前翼子板支架
翼子板滴水檐 前翼子板 前翼子板支撑板总成 加油管总成 加油基座 加油口盖减振胶垫 滤清器支架
左后立柱装饰板 抬头显示器饰板总成 左仪表板饰板 蓄电池固定拉杆 点火锁螺钉 进气法兰 左后地板侧板 前地板
BRKT-FOOT REST
HINGE ASSY-FR DOOR DISC-FR BRAKE PLATE-TUBE FUEL TANK HOSE-FUEL LID ASSY-FUSE BLOCK PULLER-FUSE GARN ASSY-FR PLR LWR LH GARN-TRUNK RR UPR GSKT-BRAKEHOSE GSKT-OILCOOLER GEAR & LNKG ASSY-PS GLASS ASSY-WS GLASS-BACK WD GLASS-RR DOOR PTN,LH
汽车常用英文术语
行李箱地毯总成 换挡警示标贴 顶盖中弓形梁 中柱内板总成 中部通气管
CLAMP HOSE CLNR ASSY-AIR PANEL CLIP ASSY BRKT-CLIP CLP-CHECK VALVE COVER CLUTCH-HOLE CYL ASSY-CLUTCH MAST CYL ASSY-CLUTCH OPER COVER-STRG COL COL ASSY-STRG COMPR COMPL BELT-COMPR MTG-CDS LWR CONSOLE ASSY RR FIN ASSY-CONSOLE RR KNOB-CONT LEVER MODULE UNIT-ENG CONT CONT ASSY-BACK SONAR PIPE COMPL-FR COOLER HIGH TUBE ASSY-OIL COOLER CORNER-RR FDR LH COVER-FR DOOR CORNER COVER-HOLE
轮辋装饰罩
CAP ASSY-FILLER
加油口盖总成
41 Carpet
42 Caution 43 Center
44 Chassis 45 Clamp 46 Cleaner 47 Clip
48 Clutch
49 Column 50 Compressor 51 Condenser 52 Console 53 Control
No.
英文全称
33 Brake
34 Bumper
英文缩写
中文
BRK
制动器
BMPR
保险杠、减振垫
示例
BRAKE TUBE CYL ASSY-BRAKE MASTER DISC-FR BRAKE
STAY ASSY-FR BMPR
BMPR ASSY-RR
BAL99-V-GS08中文资料
BAL99-VDocument Number 85535Rev. 1.7, 12-Jul-06Vishay Semiconductors1Small Signal Fast Switching DiodeFeatures•Fast switching speed •Surface mount package•Well suited for automated assembly pro-cess•Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOT23 Plastic caseWeight: approx. 8.0 mgPackaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedThermal CharacteristicsT amb = 25°C, unless otherwise specifiedPartOrdering codeType MarkingRemarks BAL99-VBAL99-V-GS18 or BAL99-V-GS08JFTape and ReelParameterT est conditionSymbol Value Unit Repetitive peak reverse voltage = Working peak reverse voltage = DC Blocking voltage V RRM = V RWM = V R70VPeak forward surge currentt = 1 µs I FSM 2A t = 1 ms I FSM 1A t = 1 sI FSM 0.5A Average forward current I FAV 250mA Power dissipationon fiberglass substrate 30 mm x 10 mm x 1.6 mmP tot350mWParameterT est conditionSymbol Value Unit Thermal resistance junction to ambient airon fiberglass substrate 30 mm x 10 mm x 1.6 mmR thJA 357K/W Junction temperature T j 150°C Storage temperature rangeT stg- 55 to + 150°C 2Document Number 85535Rev. 1.7, 12-Jul-06BAL99-VVishay Semiconductors Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedPackage Dimensions in mm (Inches): SOT23ParameterTest conditionSymbol MinTyp.Max Unit Forward voltageI F = 1 mA V F 715mV I F = 10 mA V F 855mV I F = 50 mA V F 1000mV I F = 150 mAV F 1250mV Reverse currentV R = 70 VI R 2.5µA V R = 70 V , T j = 150°C I R 100µA V R = 25 V , T j = 150°CI R 30µA Diode capacitance V F = V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = I R = 10 mA to I R = 1 mA, R L = 100 Ω, V R = 6 Vt rr6nsBAL99-VDocument Number 85535Rev. 1.7, 12-Jul-06Vishay Semiconductors3Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the L ondon Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
轻武器新品收视
轻武器新品收视作者:苏拉来源:《轻兵器》 2012年第12期CZ公司DW GUARDIAN战术客户型手枪该枪是CZ公司Dan Wesson系列中的战术客户型新产品。
其采用铝合金制套筒座,质量较轻。
其带有手动保险和握把保险,准星和照门均为固定式设计,握把底部后方切削较大,很是特别。
该枪发射9mm巴拉贝鲁姆手枪弹,全枪长201mm,枪管长108mm,全枪宽36mm,全枪质量0.82kg,弹匣容弹量9发。
CZ美国子公司CZ75 D紧凑型手枪该枪与CZ75紧凑型尺寸相同,但由于采用锻造铝合金套筒座,因此全枪质量比之减轻了1 1 3 g,仅0 . 7 8 k g,携带更方便。
该枪发射9mm巴拉贝鲁姆手枪弹,全枪长184mm,枪管长75mm,全枪宽35mm,全枪高128mm,可单、双动发射,弹匣容弹量为14发。
该枪带有膛内有弹指示器,握把护板由橡胶材料制成,握把后垫板带有锯齿状条纹,提高了握持的舒适度。
CZ美国子公司VZ61蝎式半自动手枪CZ公司著名的VZ61蝎式冲锋枪有了半自动手枪版——CZ美国子公司设计的VZ61蝎式半自动手枪。
该枪采用0.32英寸ACP口径,单动发射,带有手动保险,表面经过发蓝处理,最大的特点是取消了原枪的枪托,仅能单发发射。
其全枪长270mm,枪管长115mm,全枪高152mm,全枪宽43mm,弹匣容弹量有10发和20发两种可选。
史密斯-韦森公司M460XVR转轮手枪该枪虽称为转轮手枪,但其怪异的外形与传统转轮手枪大相径庭。
其型号名称中的“XVR”是“Xtreme Velocity Revolver”的缩写,意为“极高速转轮手枪”,代表其速度在转轮手枪中属于最高的。
该枪除握把外均由不锈钢打造,枪口带有制退器,照门可调节。
枪管上方和下方均设有皮卡汀尼导轨,下方的导轨上可加装两脚架。
该枪采用0.460英寸史密斯-韦森马格努姆口径,全枪长546mm,枪管长356mm,全枪质量2.49kg,转轮弹膛容弹量5发,可单、双动发射。
汽车功能中英文对照表
205 DOOR
DR
206 DOUBLE
DBL
207 DOWEL
DWL
208 DRAGLINK
D/LINK
209 DRAWING
DWG
210 DRAWING CHANGE NOTICE
DCN
211 DRAWN
DWN
212 DRIVE
DRV
213 DRIVE PINION
D/PINION
214 DRIVER SEAT
C/ROD CONN CONST CONST CONTNR CTR CONTNR C/VAL CONV CV COORD COR COT/PIN C/BORE CC/WISE C/DRILL C/PUNCH CO/SHAFT C/SINK CO/WT CPLG C/LP CVR C/VENT C/CASE CK/SHAFT C/MBR C/SHAFT C/REG
& ANN
ANT A/RTLR A/SQK APVD A/ENGR APPROX A/REST A/HEAD ASSY ATT AUTO A/ADJ A/CH A/T ATF AUX AVG BK B/DR B/UP BAL B/JNT B/STUD BATT BRG B/CRK
环
天线 伸缩天线 伸缩天线 被认可的 工程师承认 接近(大概) 门侧扶手 箭头 组合件 附着于 自动 自动调节器 自动活门 自排 自排油 辅助的 平均 (背部)底座 后门 后备 均衡平均 止阀头(指喷水器) 接头(指喷水器) 电瓶 支座 曲柄
变流装量 除雾器 防结水装置 高级,豪华的 部门 详细 对角线(斜线) 图示 直径(径率) 直径 隔板 差别的 尺寸 调光器开关 正统的 正确的踩离器 正确的流动
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SOT-23 Max Min 0.51 0.014 1.40 0.047 2.50 0.083 1.05 0.035 0.61 0.018 2.05 0.07 3.05 0.104 0.15 0.0005 1.10 0.035 0.61 0.018 0.17 0.003
Max 0.020 0.055 0.098 0.041 0.024 0.081 0.120 0.006 0.043 0.024 0.007
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TECHNICAL DATA
DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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