STD830CP40;中文规格书,Datasheet资料

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June 2010Doc ID 15767 Rev 21/10

STD830CP40

Complementary transistor pair in a single package

Features

■Low V CE(sat)

■Simplified circuit design ■Reduced component count ■

Low spread of dynamic parameters

Application

Compact fluorescent lamp (CFL) 220 V mains

Description

The STD830CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar

technology for high switching speeds and medium voltage capability.

The STD830CP40 is housed in dual island DIP-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in a new solution for compact fluorescent lamp (CFL).

Table 1.

Device summary

Order code Marking Package Packing STD830CP40

D830CP40

DIP-8

T ube

Electrical ratings STD830CP40

2/10 Doc ID 15767 Rev 2

1 Electrical ratings

Note:For PNP types voltage and current values are negative

Table 2.

Absolute maximum ratings

Symbol Parameter

Value

Unit

NPN

PNP V CBO Collector-base voltage (I E = 0)700

500

V V CEO Collector-emitter voltage (I B = 0)

400V V EBO Emitter-base voltage (I C = 0, I B = 1.5 A, t p < 10 ms)V (BR)EBO

V I C Collector current

3A I CM Collector peak current (t P < 5 ms)6A I B Base current

1.5A I BM Base peak current (t P < 1 ms)

3A P TOT Total dissipation at T amb = 25 °C single transistor 3W P TOT Total dissipation at T amb = 25 °C both transistors 2.2W T STG Storage temperature

-65 to 150°C T J

Max. operating junction temperature

150

°C Table 3.

Thermal data

Symbol Parameter

Value Unit R thJA (1)1.When mounted on 25mm square pad of 2 oz. copper, t ≤ 10 sec.

Thermal resistance junction-ambient (Single transistor)42°C/W R thJA (1)

Thermal resistance junction-ambient (Both transistors)

57

°C/W

STD830CP40Electrical characteristics

Doc ID 15767 Rev 23/10

2 Electrical characteristics

T case = 25 °C unless otherwise specified.Note:For PNP types voltage and current values are negative

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions Min.

Typ.

Max.Unit I CES

Collector cut-off current (V BE = 0)

For NPN:

V CE = 700 V

V CE = 700 V T C = 125°C For PNP:V CE = 500 V

V CE = 500 V T C = 125°C

0.10.50.10.5mA mA mA mA V (BR)EBO

Emitter-base breakdown

voltage (I C = 0)

I E = 10 mA

For NPN:

For PNP:1051810

V V V CEO(sus)

(1)

1.Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter sustaining voltage (I B = 0)

I C = 5 mA

400

V V CE(sat)(1)Collector-emitter saturation voltage I C = 0.7 A I B = 0.1 A I C = 1 A I B = 0.2 A 0.50.5V V V BE(sat)(1)

Base-emitter saturation voltage I C = 0.5 A I B = 0.1 A I C = 1 A I B = 0.2 A 1.11.2

V V

h FE (1)

DC current gain I C = 10 mA V CE = 5 V I C = 0.7 A V CE = 5 V I C = 2 A V CE = 5 V 10184

34

t r t s t f Resistive load Rise time Storage time Fall time I C = 0.7 A V CC = 250 V I B1 = 0.14 A I B2 = -0.14 A t p = 30 µs

1002.4100ns µs ns t s t f

Inductive load Storage time Fall time

I C = 1 A I B1 = 0.2 A V BE(off) = -5 V R BB = 0V clamp = 200 V L = 1 mH

450100

ns ns

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