STD830CP40;中文规格书,Datasheet资料
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
June 2010Doc ID 15767 Rev 21/10
STD830CP40
Complementary transistor pair in a single package
Features
■Low V CE(sat)
■Simplified circuit design ■Reduced component count ■
Low spread of dynamic parameters
Application
■
Compact fluorescent lamp (CFL) 220 V mains
Description
The STD830CP40 is a hybrid complementary pair of power bipolar transistors manufactured by using the high voltage multi-epitaxial planar
technology for high switching speeds and medium voltage capability.
The STD830CP40 is housed in dual island DIP-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in a new solution for compact fluorescent lamp (CFL).
Table 1.
Device summary
Order code Marking Package Packing STD830CP40
D830CP40
DIP-8
T ube
Electrical ratings STD830CP40
2/10 Doc ID 15767 Rev 2
1 Electrical ratings
Note:For PNP types voltage and current values are negative
Table 2.
Absolute maximum ratings
Symbol Parameter
Value
Unit
NPN
PNP V CBO Collector-base voltage (I E = 0)700
500
V V CEO Collector-emitter voltage (I B = 0)
400V V EBO Emitter-base voltage (I C = 0, I B = 1.5 A, t p < 10 ms)V (BR)EBO
V I C Collector current
3A I CM Collector peak current (t P < 5 ms)6A I B Base current
1.5A I BM Base peak current (t P < 1 ms)
3A P TOT Total dissipation at T amb = 25 °C single transistor 3W P TOT Total dissipation at T amb = 25 °C both transistors 2.2W T STG Storage temperature
-65 to 150°C T J
Max. operating junction temperature
150
°C Table 3.
Thermal data
Symbol Parameter
Value Unit R thJA (1)1.When mounted on 25mm square pad of 2 oz. copper, t ≤ 10 sec.
Thermal resistance junction-ambient (Single transistor)42°C/W R thJA (1)
Thermal resistance junction-ambient (Both transistors)
57
°C/W
STD830CP40Electrical characteristics
Doc ID 15767 Rev 23/10
2 Electrical characteristics
T case = 25 °C unless otherwise specified.Note:For PNP types voltage and current values are negative
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions Min.
Typ.
Max.Unit I CES
Collector cut-off current (V BE = 0)
For NPN:
V CE = 700 V
V CE = 700 V T C = 125°C For PNP:V CE = 500 V
V CE = 500 V T C = 125°C
0.10.50.10.5mA mA mA mA V (BR)EBO
Emitter-base breakdown
voltage (I C = 0)
I E = 10 mA
For NPN:
For PNP:1051810
V V V CEO(sus)
(1)
1.Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter sustaining voltage (I B = 0)
I C = 5 mA
400
V V CE(sat)(1)Collector-emitter saturation voltage I C = 0.7 A I B = 0.1 A I C = 1 A I B = 0.2 A 0.50.5V V V BE(sat)(1)
Base-emitter saturation voltage I C = 0.5 A I B = 0.1 A I C = 1 A I B = 0.2 A 1.11.2
V V
h FE (1)
DC current gain I C = 10 mA V CE = 5 V I C = 0.7 A V CE = 5 V I C = 2 A V CE = 5 V 10184
34
t r t s t f Resistive load Rise time Storage time Fall time I C = 0.7 A V CC = 250 V I B1 = 0.14 A I B2 = -0.14 A t p = 30 µs
1002.4100ns µs ns t s t f
Inductive load Storage time Fall time
I C = 1 A I B1 = 0.2 A V BE(off) = -5 V R BB = 0V clamp = 200 V L = 1 mH
450100
ns ns