VBE17-06NO7;中文规格书,Datasheet资料

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AS1117-BQFT;中文规格书,Datasheet资料

3 Applications
The AS1117 is ideal for seven-segment or dot matrix user interface displays of mobile applications, set-top boxes, VCRs, DVD-players, washing machines, micro wave ovens, refrigerators and other white good or personal electronic applications.
Keyscan Input. Keyscan lines for key readback. Can be used for self-adressing. Reset Input. Pull this pin to low to resest all registers (set to default values) and to put the device into shutdown. Connect this pin via a pull-up resistor to VDD for normal operation. Set Segment Current. Connect to VDD or a reference voltage through RSET to set the peak segment current (see Selecting RSET Resistor Value and Using External Drivers on page 19). Serial-Clock Input. 3.4MHz maximum rate.
Stresses beyond those listed in Table 3 may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Section 6 Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

BAT17中文资料

handbook, halfpa2ge
1
2 n.c.
3
1 3
MAM171
Marking code: A3p = made in Hong Kong; A3t = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
1999 May 26
2
元器件交易网
Philips Semiconductors
Schottky barrier diode
Product speciﬁcation
BAT17
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed.
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT17 Schottky barrier diode
Product speciﬁcation Supersedes data of 1996 Mar 20
1999 May 26
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
Product speciﬁcation
BAT17
SOT23
D
B
E
A
X
3
1
e1
bp
e
2
wM B
HE

MJB45H11G;MJB44H11G;MJB44H11T4G;MJB45H11T4G;MJB44H11;中文规格书,Datasheet资料

tf
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 t, TIME (ms) 5.0 10 20 50
Features
SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS
MARKING DIAGRAM
Low Collector−Emitter Saturation Voltage −
Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MJB44H11/D

液压式SIEMENS S7-400H F FH CPU 417-5H数据表说明书

General information Product type designation HW functional status Firmware version Engineering with ● Programming package
CiR – Configuration in RUN CiR synchronization time, basic load CiR synchronization time, time per I/O byte
Yes Yes; all data No
180 µA; Valid up to 40°C 1 000 µA Dealt with in the module data manual with the secondary conditions and the factors of influence 5 V DC to 15 V DC
Address area I/O address area ● Inputs ● Outputs Process image ● Inputs, adjustable ● Outputs, adjustable ● Inputs, default ● Outputs, default ● consistent data, max. ● Access to consistent data in process image Subprocess images ● Number of subprocess images, max. Digital channels ● Inputs — of which central ● Outputs — of which central Analog channels ● Inputs — of which central ● Outputs — of which central

ZXMP10A17E6TA;中文规格书,Datasheet资料

(Note 1)
(Note 2) (Note 1) (Note 2)
Symbol PD
RθJA TJ, TSTG
Value 1.1 8.8 1.7 13.7 113 73
-55 to 150
Unit W mW/°C
°C/W °C
Notes:
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
3 of 8
December 2009
© Diodes Incorporated
ADVANCE INFORMATION
A Product Line of Diodes Incorporated
ZXMP10A17E6
Electrical Characteristics @TA = 25°C unless otherwise specified
ADVANCE INFORMATION
A Product Line of Diodes Incorporated
ZXMP10A17E6
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Thermal Characteristics
A Product Line of Diodes Incorporated

IMX8T108;中文规格书,Datasheet资料

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Collector-emitter saturation voltage
COLLECTOR CURRENT : IC (mA)
10
25.0
22.5
8
20.0
17.5
6
15.0
12.5
4
10.0
7.5
2
5.0
2.5
0
IB=0µA
4
8
Ta=25°C
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
Pc
Junction temperature
IC/IB=10 0.5
0.2 Ta=100°C
0.1
25°C
−40°C 0.05

DMN5L06VK-7;DMN5L06VAK-7;中文规格书,Datasheet资料

http://onDeocicum.ceonmt n/umber: DS30769 Rev. 10 - 2
1
3 of 6
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance
Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
VGS(th)
0.49
⎯
⎯
⎯
RDS (ON)
⎯
⎯
⎯
⎯
ID(ON)
0.5
1.4
|Yfs|

MMBT4401LT1G;MMBT4401LT3G;MMBT4401LT1;中文规格书,Datasheet资料

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant•AEC−Q101 Qualified and PPAP Capable•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change RequirementsMAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO40Vdc Collector−Base Voltage V CBO60Vdc Emitter−Base Voltage V EBO 6.0Vdc Collector Current − Continuous I C600mAdc Collector Current − Peak I CM900mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) @T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate (Note 2) @T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*Transient pulses must not cause the junction temperature to be exceeded.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23 (TO−236)CASE 318STYLE 6COLLECTOR12EMITTER*Date Code orientation and/or overbar mayvary depending upon manufacturing location.12X M GG2X= Specific Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONMMBT4401LT3G SOT−23(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.MMBT4401LT1GSMMBT4401LT1GSOT−23(Pb−Free)3000 / Tape &Reel10,000 / Tape &ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I B = 0)V (BR)CEO 40−Vdc Collector −Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0)V (BR)CBO 60−Vdc Emitter −Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0)V (BR)EBO 6.0−Vdc Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc)I BEV −0.1m Adc Collector Cutoff Current(V CE = 35 Vdc, V EB = 0.4 Vdc)I CEX−0.1m AdcON CHARACTERISTICS (Note 3)DC Current Gain(I C = 0.1 mAdc, V CE = 1.0 Vdc)(I C = 1.0 mAdc, V CE = 1.0 Vdc)(I C = 10 mAdc, V CE = 1.0 Vdc)(I C = 150 mAdc, V CE = 1.0 Vdc)(I C = 500 mAdc, V CE = 2.0 Vdc)h FE20408010040−−−300−−Collector −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V CE(sat)−−0.40.75VdcBase −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V BE(sat)0.75−0.951.2VdcSMALL −SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)f T 250−MHz Collector −Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C cb − 6.5pF Emitter −Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C eb −30pF Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h ie 1.015k W Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h re 0.18.0X 10−4Small −Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h fe 40500−Output Admittance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe1.030m mhosSWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc,IC = 150 mAdc, I B1 = 15 mAdc)t d−15nsRise Time t r −20Storage Time (V CC = 30 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc)t s −225nsFall Timet f−303.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.Figure 1. Turn −On Time Figure 2. Turn −Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSFigure 3. Charge DataI C , COLLECTOR CURRENT (mA)Q , C H A R G E (n C )2.03.05.07.0101.00.10.70.5Figure 4. Turn −On Time IC , COLLECTOR CURRENT (mA)2030505.0107.0Figure 5. Rise and Fall TimesI C , COLLECTOR CURRENT (mA)Figure 6. Storage Time I C , COLLECTOR CURRENT (mA)Figure 7. Fall TimeI C , COLLECTOR CURRENT (mA)25°C100°CTRANSIENT CHARACTERISTICS0.30.2t s , S T O R A G E T I M E (n s )′t , T I M E (n s )t , T I M E (n s )t f , F A L L T I M E (n s )701002030505.0107.0701001002003070503006.08.04.02.0Figure 8. Frequency Effects f, FREQUENCY (kHz)SMALL −SIGNAL CHARACTERISTICS NOISE FIGUREV CE = 10 Vdc, T A = 25°C; Bandwidth = 1.0 HzN F , N O I S E F I G U R E (d B )10N F , N O I S E F I G U R E (d B )Figure 9. Source Resistance EffectsR S , SOURCE RESISTANCE (OHMS)h PARAMETERSV CE = 10 Vdc, f = 1.0 kHz, T A = 25°CThis group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high −gain and a low −gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.h i e , I N P U T I M P E D A N C E (O H M S )Figure 10. Input ImpedanceI C , COLLECTOR CURRENT (mA)50 k 50020 k 10 k 5.0 k2.0 k1.0 k Figure 11. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)10Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)7.05.03.02.01.00.70.50.3h , O U T P U T A D M I T T A N C E ( m h o s )o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e m -4Figure 13. DC Current GainI C , COLLECTOR CURRENT (A)Figure 14. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.20.2V , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )0CE 0.001502503005000.01h , D C C U R R E N T G A I N0.101F E 400Figure 15. Collector −Emitter SaturationVoltage vs. Collector CurrentI C , COLLECTOR CURRENT (A)0.150.200.300.350.05Figure 16. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (V )0.010.10- 0.50- 1.0- 1.5- 2.010.0001C O E F F I C I E N T (m V /C )°- 2.50.010.11.01101001502003504500.0010.100.25100Figure 17. Base −Emitter Saturation Voltage vs.Collector CurrentFigure 18. Base −Emitter Turn On Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (A)I C , COLLECTOR CURRENT (A)V B E (s a t ), B A S E −E M I T T E R S A T U R A -T I O N V O L T A G E (V )V B E (o n ), B A S E −E M I T T E R T U R N O N V O L T A G E (V )Figure 19. Input Capacitance vs. Emitter BaseVoltage Figure 20. Output Capacitance vs. CollectorBase VoltageV eb , EMITTER BASE VOLTAGE (V)V cb , COLLECTOR BASE VOLTAGE (V)63210911131519215030251001.52.53.54.56.58.5C i b o , I N P U T C A P A C I T A NC E (p F )C o bo , O U T P U T C A P A C I T A N C E (p F )17 5.545515203540457.5Figure 21. Safe Operating Area Figure 22. Current −Gain −Bandwidth ProductV CE , COLLECTOR EMITTER VOLTAGE (V)I C , COLLECTOR CURRENT (mA)I C , C O L L E C T O R C U R R E N T (A )f T , C U R R E N T −G A I N −B A N D W I D T H (M H z )PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APSOLDERING FOOTPRINT**For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L12.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q °°°°ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBT4401LT1G MMBT4401LT3G MMBT4401LT1。

VBE26-06NO7;中文规格书,Datasheet资料

ECO-PAC TMSingle Phase Rectifier Bridgewith Fast Recovery Epitaxial Diodes (FRED)I dAV =44 A V RRM =600 V t rr =35 nsV RSM V RRM TypV V600600VBE 26-06NO7Symbol Conditions Maximum RatingsI dAV x T C = 85°C, module 44A I dAVM 90A I FSMT VJ = 45°C t = 10 ms (50 Hz), sine 110A V R = 0t = 8.3 ms (60 Hz), sine 120A T VJ = T VJM t = 10 ms (50 Hz), sine 95A V R = 0t = 8.3 ms (60 Hz), sine 105A I 2tT VJ = 45°C t = 10 ms (50 Hz), sine 60A 2s V R = 0t = 8.3 ms (60 Hz), sine 60A 2sT VJ = T VJM t = 10 ms (50 Hz), sine 45A 2s V R = 0t = 8.3 ms (60 Hz), sine45A 2s T VJ -40...+150°C T VJM 150°C T stg -40...+125°C V ISOL 50/60 Hz, RMS t = 1 min 3000V~I ISOL £ 1 mAt = 1 s3600V~M dMounting torque (M4) 1.5-2/14-18Nm/lb.in.Weight typ.19g Features•Package with DCB ceramic base plate in low profile •Isolation voltage 3000 V~•Planar passivated chips •Low forward voltage drop•Leads suitable for PC board soldering Applications•Supplies for DC power equipment •Input and output rectifiers for high frequency•Battery DC power supplies •Field supply for DC motors Advantages•Space and weight savings•Improved temperature and power cycling capability•Small and light weight •Low noise switchingData according to IEC 60747 refer to a single diode unless otherwise stated x for resistive load at bridge output.DKANSymbol Conditions Characteristic Valuestyp.max.I R V R = V RRM T VJ = 25°C 0.1mA V R = V RRM T VJ = T VJM 0.5mA V F I F = 15 AT VJ = 25°C2.01VV T0for power-loss calculations only 1.13V r T 13m W R thJC per diode; DC current1.6K/W R thCH per diode, DC current, typ.0.3K/W I RM I F = 25 A, -diF/dt = 100 A/µs4 4.9A V R = 100 V, L = 0.05 mH, T VJ = 100°Ct rr I F = 1 A; -di/dt = 100 A/µs; V R = 30 V, T VJ = 25°C 35tbdns a Max. allowable acceleration 50m/s 2d S creeping distance on surface 11.2mm d Acreepage distance in air9.7mmIXYS reserves the right to change limits, test conditions and dimensions.032Dimensions in mm (1 mm = 0.0394")0.00.40.81.21.6010203040I FA t frµs Fig. 3Peak reverse current I RMversus -di F /dtFig. 2Reverse recovery charge Q rversus -di F /dtFig. 1Forward current I F versus V FFig. 6Peak forward voltage V FR and t frversus di F /dt Fig. 7Transient thermal resistance junction to caseNOTE: Fig. 2 to Fig. 6 shows typical valuesConstants for Z thJC calculation:i R thi (K/W)t i (s)10.54640.005220.21040.000330.04320.000440.80.0092分销商库存信息: IXYSVBE26-06NO7。

MMBT3904;2N3904TF;2N3904TFR;PZT3904;2N3904BU;中文规格书,Datasheet资料

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a = 25°C unless otherwise noted* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm 2.V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous200mA T J, T stgOperating and Storage Junction Temperature Range-55 to +150°CSymbolParameterMax.Units2N3904*MMBT3904**PZT3904P D Total Device Dissipation Derate above 25°C6255.03502.81,0008.0mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJAThermal Resistance, Junction to Ambient200357125°C/W* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Ordering Information f = 10Hz to 15.7kHzSWITCHING CHARACTERISTICSt d Delay Time V CC = 3.0V, V BE = 0.5VI C = 10mA, I B1 = 1.0mA 35nst r Rise Time35nst s Storage Time V CC = 3.0V, I C = 10mA,I B1 = I B2 = 1.0mA 200nst f Fall Time50nsPart Number Marking Package Packing Method Pack Qty 2N3904BU2N3904TO-92BULK10000 2N3904TA2N3904TO-92AMMO2000 2N3904TAR2N3904TO-92AMMO2000 2N3904TF2N3904TO-92TAPE REEL2000 2N3904TFR2N3904TO-92TAPE REEL2000 MMBT39041A SOT-23TAPE REEL3000 MMBT3904_D87Z1A SOT-23TAPE REEL10000 PZT39043904SOT-223TAPE REEL2500Auto-SPM¥AX-CAP¥*BitSiC®Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥ESBC¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥Making Small Speakers Sound Louderand Better™MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥mWSaver¥OptoHiT¥OPTOLOGIC®OPTOPLANAR®®PowerTrench®PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET®SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS®SyncFET¥Sync-Lock™®*TinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TranSiC®TriFault Detect¥TRUECURRENT®*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥VoltagePlus¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a)are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息:FAIRCHILDMMBT39042N3904TF2N3904TFRPZT39042N3904BU MMBT3904_D87Z 2N3904TA2N3904TAR2N3904_J05Z2N3904CBU2N3904CTA2N3904NLBU2N3904_D10Z2N3904_D28Z2N3904_D81Z2N3904_J18Z2N3904_J25Z2N3904_J61Z2N3904_D27ZS00Z。

2N3906-AP;中文规格书,Datasheet资料

2N3906PNP General Purpose AmplifierFeaturesElectrical Characteristics @ 25°C Unless Otherwise SpecifiedSymbolParameterMin MaxUnits OFF CHARACTERISTICSV (BR)CEO Collector-Emitter Breakdown Voltage* (I C =1.0mAdc, I B =0)40 Vdc V (BR)CBO Collector-Base Breakdown Voltage (I C =10µAdc, I E =0)40 Vdc V (BR)EBO Emitter-Base Breakdown Voltage (I E =10µAdc, I C =0) 5.0VdcI BL Base Cutoff Current(V CE =30Vdc, V BE =3.0Vdc)50 nAdc I CEXCollector Cutoff Current (V CE =30Vdc, V BE =3.0Vdc)50 nAdcON CHARACTERISTICSh FEDC Current Gain*(I C =0.1mAdc, V CE =1.0Vdc) (I C =1.0mAdc, V CE =1.0Vdc) (I C =10mAdc, V CE =1.0Vdc) (I C =50mAdc, V CE =1.0Vdc) (I C =100mAdc, V CE =1.0Vdc)60801006030300V CE(sat)Collector-Emitter Saturation Voltage (I C =10mAdc, I B =1.0mAdc) (I C =50mAdc, I B =5.0mAdc)0.250.4VdcV BE(sat)Base-Emitter Saturation Voltage (I C =10mAdc, I B =1.0mAdc) (I C =50mAdc, I B =5.0mAdc)0.650.850.95VdcSMALL-SIGNAL CHARACTERISTICSf T Current Gain-Bandwidth Product(I C =10mAdc, V CE =20Vdc, f=100MHz) 250 MHz C obo Output Capacitance(V CB =5.0Vdec, I E =0, f=100k Hz) 4.5 pF C ibo Input Capacitance(V BE =0.5Vdc, I C =0, f=100kHz)10.0pF NFNoise Figure(I C =100µAdc, V CE =5.0Vdc, R S =1.0k Ωf=10Hz to 15.7kHz)4.0dB SWITCHING CHARACTERISTICSt dDelay Time (V CC =3.0Vdc, V BE =0.5Vdc 35ns t r Rise Time I C =10mAdc, I B1=1.0mAdc)35 ns t s Storage Time (V CC =3.0Vdc, I C =10mAdc 225 ns t fFall Time I B1=I B2=1.0mAdc)75ns*Pulse Width≤ 300µs, Duty Cycle ≤ 2.0%omp onents 20736Marilla Street Chatsworth! "# $ % ! "#Revision: D 2012/07/13TMMicro Commercial Componentswww.mccsemi .com1 of 5x Marking:Type numberx Capable of 600mW of Power Disspation and 200mA Ic x Through Hole Package x Moisure Sensitivity Level 1x Epoxy meets UL 94 V-0 flammability rating • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)2N3906DC Current Gain vs Collector Current h FEI C (mA)40801201602002200.1110100Base-Emitter ON Voltage vs Collector Current V BE(ON) - (V)I C - (mA)00.20.40.60.81.01.20.11.010100Collector-Emitter Saturation Volatge vs Collector Current Base-Emitter Saturation Voltage vs Collector CurrentV CE(SAT) - (V)V BE(SAT) - (V)00.10.20.30.40.50.61.01010010000.20.40.60.81.01.21.41.0101001000I C - (mA)I C - (mA)Collector-Base Diode Reverse Current vs Temperature Common Base Open Circuit Input andOutput Capacitance vs Reverse Bias Voltage I CBO - (mA)T J - (°C)Volts - (V)pF0.11.010100255075100125150V CB = 20V 024681.00.11.010C OBO C IBOT A = 25°CTO-92I C /I B = 10T A = 25°CI C /I B = 10T A = 25°CV CE = 1.0VV CE = 5.0VT A = 25°CT A = 100°C Revision: D 2012/07/13TMMicro Commercial Componentswww.mccsemi .com2 of 52N3906f - (kHz)Maximum Power Dissipation vs Ambient Temperature Noise Figure vs Source ResistanceP D(MAX) - (mW)T A - (°C)TO-92SOT-230200400600800050100150200NF - (dB)R S - (k Ω)0246810120.11.010100I C = 1.0mAI C = 100µAV CE = 5.0V f = 1.0kHzContours of Constant Gain Bandwidth Product (f T )Current GainV CE - (V)I C - (mA)h feI C - (mA)V CE = 10V f = 1.0kHz048121620240.11.0101001010010000.11.010Noise Figure vs Frequency Switching Times vs Collector Current NF - (dB)T - (ns)I C - (mA)1.01010010001.010100I B1 = I B2 = I C /10t st ft r t dV CE = 5.0VI C = 100µA R S = 200ΩI C = 1.0mA R S = 200ΩI C = 100µA R S = 2.0k Ω0.11.010100123456*100MHz increments from 100 to 700, 750 and 800MHzRevision: D 2012/07/13TMMicro Commercial Componentswww.mccsemi .com3 of 52N3906Input Impedance Output Admittanceh ie - (k Ω)I C - (mA)I C - (mA)h oe - (µΩ)V CE = 10V f = 1.0kHzV CE = 10V f = 1.0kHz0.11.0100.11.0100.11.010101001000Voltage Feedback Ratio Turn On and Turn Off Times vs Collector Currenth fe - (X10-4)I C - (mA)I C - (mA)T - (ns)1.0101000.1 1.0101.01010010001.010100t on I B1 = I C /10V BE(OFF) = 0.5V t off I B1 = I B2 = I C /10t offt onRevision: D 2012/07/13TMMicro Commercial Componentswww.mccsemi .com4 of 5Revision: D 2012/07/13Micro Commercial Componentswww.mccsemi .com5 of 5Part Number-BP Bulk: 100Kpcs/CartonOrdering Information :***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below . Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.DevicePackingPart Number-AP Ammo Packing: 20Kpcs/Carton 3分销商库存信息: MICRO-COMMERICAL-CO 2N3906-AP。

MMBTA92LT1G;MMBTA92LT3G;SMMBTA92LT1G;SMMBTA92LT3G;MMBTA93LT1G;中文规格书,Datasheet资料

(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
1
VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10
VCE = 20 Vdc
30
F = 20 MHz
10
1000
1 3 5 7 9 11 13 15 17 19 21
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
0.1
© Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 9
/
Publication Order Number: MMBTA92LT1/D
MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic

17HA产品规格书-中文

20
100 10
50
0
0
0
1000
2000
3000
4000
Pulse rate [pps]
0 100 200 300 400 500 600
Speed [r/min]
• 单极性
17HA7602
฽ណ్͇ḬӬ౜ব়ึ᯵Ү٧ ᯵Ү٧‫ۋ‬ՁḬ AMA MSU3040M ᯵ҮഴयḬஞ൥
0.65A(ࢎϘ) 12V 50
40
0.65A(ࢎϘ) 24V 6
30
4
20
2 10
0
0
0
2000
4000
6000
8000
Pulse rate [pps]
0 200 400 600 800 1000 1200
Speed [r/min]
17HA0601N
฽ណ్͇ḬӬ౜ব়ึ᯵Ү٧ ᯵Ү٧‫ۋ‬ՁḬ AMA MSU3040M ᯵ҮഴयḬஞ൥
静力矩 mNm oz-in
35 4.96
额定电流 A
0.65
60 8.50
0.43
170 24.09
0.87
220 31.18
0.5
每相电阻 ohm 6.6
8 3.1 20
每相电感 mH 2.9
定位力矩
转子惯量
mNm oz-in g.cm2 oz-in2
5
0.71 20 0.08
4
Байду номын сангаас
8
1.13 20 0.11
0.87A(ࢎϘ) 12V 300 250 200
0.87A(ࢎϘ) 24V 40 30
150
20
100 10

MMPQ2907;中文规格书,Datasheet资料

Base-Emitter Saturation Voltage vs Collector Current
1 0.8 0.6
125 ºC - 40 ºC 25 °C
Base Emitter ON Voltage vs Collector Current
1 0.8
- 40 ºC
0.6 0.4 0.2 0 0.1
1 KW
37 W
1.0 KW 0 - 30 V 50 W
£ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
/
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
MMPQ2907
MMPQ2907
E3 B3 E4 B4
E1
B1
E2
B2
SOIC-16
pin #1 C1
C2 C1
C3 C2
C4 C4 C3
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

17HDN产品规格书-中文

60 50 40 30 20 10
0 2000 4000 6000
400 300 200 100 0
60 50 40 30 20 10
0 1000 2000 3000 4000 5000
Pull out torque [oz.in]
400 300 200 100 0
0 8000
0 6000
0 1000 2000 3000 4000 5000 6000 7000
0 200 400 600 800
400 300 200 100 0
0 1800
0
0 1500
Pulse rate [pps]
0 100 200 300 400 500 0
Pulse rate [pps]
100 200 0 100
Pulse rate [pps]
200 300 400
Speed [r/min]
0 -0.052 0 -0.002)
(ø0.1968
L
质量
ø5
0 -0.012
L
31±0.1 (1.220±0.004)
17HD4N 17HD2N 17HD6N 17HDBN
(ø0.866
24±0.5 (0.95±0.02) mm(inch)
2 (0.08)
11 (0.43)
4-M3 4.5 0.18
) 24V
1.0A(
) 12V
1.0A(
) 24V
500
70
500
70
500
70 60 50 40 30 20 10
0
Pull out torque [mN.m]
Pull out torque [mN.m]

MM3474D01VBE_100709_(中文)

４．　概要 / Outline・MM3474系列概要MM3474系列采用高耐压CMOS工艺，对于2次用锂电池/聚合物电池的过充电，过放电及过电流能起到保护作用的IC.当3节～5节的锂电池/聚合物电池在发生过充电，过放电及过电流时可起到一定的保护。

另外，将MM3474进行级联，可对应6节以上电池的应用。

IC内部由电压检测器，基准电压源，OR电路，不感应时间设定电路，逻辑电路等构成。

・过充电保护功能电池V1 到电池V5，只要其中一节电池的电压在过充电保护电压以上时，经过COV端子上所连接的电容值来设定的不感应延时时间后，与外围下拉电阻相连接的OV端输出：高阻抗/"Hi impedance",充电控制用Nch MOS FET为OFF，充电被停止。

当电池V1到电池V5其中每一节的电压都在过充电解除电压以下时，OV端子输出高电平H,过充电保护状态解除。

・过放电保护功能电池V1到电池V5,只要其中一节电池的电压在过放电保护电压以下时，经过CDC端子上所连接的电容值来设定的不感应延时时间后，DCHG端子输出低电平L ,放电控制用Nch MOS FET 为OFF,放电被停止。

当电池V1到电池V5其中每一节的电压都在放电再开电压以上时，DCHG端子输出高电平H,过放电保护状态解除。

・过电流・短路保护功能在放电可能状态下，由于负载短路等原因，CS端子的电压在过电流保护电压以上、短路保护电压以下时，此状态为过电流保护状态。

CS端子电压在短路保护电压以上时，此状态为短路保护状态。

过电流及短路保护后，经过COL1端子上所连接的电容值来设定的不感应延时时间后DCHG端子输出低电平L,放电控制用Nch MOS FET为OFF。

放电被停止。

过电流及短路保护状态的解除，是通过开放负载来进行的，负载开放后，通过IC内部的下拉电阻，V-端子的电压在过电流解除V-端子电压以下时，DCHG端子输出高电平H，过电流及短路保护状态解除。

7LB176资料

PACKAGING INFORMATIONOrderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)5962-9318301Q2A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type 5962-9318301QPA ACTIVE CDIP JG 81TBD A42SNPB N /A for Pkg Type SN65LBC176D ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN65LBC176DG4ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN65LBC176DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN65LBC176DRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN65LBC176P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN65LBC176PE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN65LBC176QD ACTIVE SOIC D 875TBD CU NIPDAU Level-1-220C-UNLIM SN65LBC176QDR ACTIVE SOIC D 82500TBD CU NIPDAU Level-1-220C-UNLIM SN75LBC176D ACTIVE SOIC D 875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN75LBC176DG4ACTIVE SOIC D875Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN75LBC176DR ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN75LBC176DRG4ACTIVE SOIC D 82500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN75LBC176P ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN75LBC176PE4ACTIVE PDIP P 850Pb-Free (RoHS)CU NIPDAUN /A for Pkg TypeSNJ55LBC176FK ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type SNJ55LBC176JGACTIVECDIPJG81TBDA42SNPBN /A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder12-Jan-2007temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.12-Jan-2007IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and todiscontinue any product or service without notice. Customers should obtain the latest relevant informationbefore placing orders and should verify that such information is current and complete. All products are soldsubject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are used to the extentTI deems necessary to support this warranty. Except where mandated by government requirements, testingof all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsiblefor their products and applications using TI components. To minimize the risks associated with customerproducts and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patentright, copyright, mask work right, or other TI intellectual property right relating to any combination, machine,or process in which TI products or services are used. Information published by TI regarding third-partyproducts or services does not constitute a license from TI to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents orother intellectual property of the third party, or a license from TI under the patents or other intellectualproperty of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices.Reproduction of this information with alteration is an unfair and deceptive business practice. TI is notresponsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI forthat product or service voids all express and any implied warranties for the associated TI product or serviceand is an unfair and deceptive business practice. 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FAIRCHILD FQPF17P06 说明书

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQPF17P06TO-220FG S DNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 2.4mH, I AS = -12A, V DD = -25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ -17A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = -250 µA, Referenced to 25°C ---0.06--V/°C I DSS Zero Gate Voltage Drain Current V DS = -60 V, V GS = 0 V -----1µA V DS = -48 V, T C = 150°C -----10µA I GSSF Gate-Body Leakage Current, Forward V GS = -25 V, V DS = 0 V -----100nA I GSSRGate-Body Leakage Current, ReverseV GS = 25 V, V DS = 0 V----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = -250 µA -2.0---4.0V R DS(on)Static Drain-Source On-ResistanceV GS = -10 V, I D = -6.0 A --0.0940.12Ωg FSForward TransconductanceV DS = -30 V, I D = -6.0 A--8.7--SDynamic CharacteristicsC iss Input Capacitance V DS = -25 V, V GS = 0 V, f = 1.0 MHz--690900pF C oss Output Capacitance--325420pF C rssReverse Transfer Capacitance--80105pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = -30 V, I D = -8.5 A,R G = 25 Ω--1335ns t r Turn-On Rise Time --100210ns t d(off)Turn-Off Delay Time --2255ns t f Turn-Off Fall Time --60130ns Q g Total Gate Charge V DS = -48 V, I D = -17 A,V GS = -10 V--2127nC Q gs Gate-Source Charge -- 4.2--nC Q gdGate-Drain Charge--10--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current -----12A I SM Maximum Pulsed Drain-Source Diode Forward Current-----48A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = -12 A -----4.0V t rr Reverse Recovery Time V GS = 0 V, I S = -17 A,dI F / dt = 100 A/µs--92--ns Q rrReverse Recovery Charge--0.32--µC(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。

EN817中文版

欧洲标准EN8171997.8英语版本卫生龙头――机械组合件一般技术说明EN817：1997目录前言＊简价1.范围2.通用参考3.定义4.分类4.1单控制混合阀4.2其它混合阀5.设计6.标记－标识6.1 标记6.2 标识7.材料7.1化学及卫生特性7.2外露表面条件及涂层质量8.尺寸特性8.1图样的一般说明8.2安装于水平表面的机械混合阀8.3安装于垂直表面的机械混合阀8.4出水边的尺寸8.5特殊情况9.密封性9.1概述9.2测试方法9.3混合阀的阀上游及阀的密封性9.4阀的密封性：热水和冷水之间的交叉流动9.5混合阀的阀下游的密封性9.6手动分水器的密封性9.7自动返回式分水器的密封性9.8要求总括10.水力操作性能10.1概述10.2测试方法10.3仪器10.4混合阀的安装10.5步骤10.6水压特性的确认11.在压力下的机械性能11.1概述11.2仪器11.3阀上游的机械性能的测试――阀在关闭位置上11.4阀下游的机械性能的测试――阀在打开位置上12.机械耐力性能12.1控制设备的机械耐力12.2分水器的机械耐力12.3旋转喷嘴的机械耐力13.抗扭力控制性能13.1概述13.2测试方法14.声音性能14.1概述14.2步骤14.3要求15.饮用水防污染的保护附录A（规范性）压力三通器举例A1.压力三通器设计简介附录B（参考性）声音类型（举例）B1.带喷嘴的机械混合阀B2.具有淋浴装置或淋喷头出水口的机械混合阀B3.带喷嘴及淋浴装置或淋喷头出水口的机械混合阀附录C（参考性）密封性测试概要○简介本标准涵盖的产品引起的对人类消费用水的水质的影响，应考虑到其潜在的不利方面：（1）本标准所提供的非资料性参考是否使用于产品上，对EU或EFTA的任何成员国并无限制。

（2）应注意的是，在欧洲标准待认证采用时，关于产品的使用及（或）性能，其国家法规应继续生效。

1.范围本欧洲标准规定：――机械混合阀具有的尺寸，密封性，机械及水力学性能，机械耐力和声音性能，应遵守。

2SA1767资料

−10
200 Ta = 75°C 150 25°C −25°C
Transition frequency fT (MHz)
−10 −100
250
100
80
−1 25°C Ta = 75°C −25°C
60
100
40
− 0.1
50
20
− 0.01 − 0.1
−1
−10
−100
0 − 0.1
−1
0 0.1
Min −300 −5 30
Typ
Max
Unit V V V MHz pF
150 − 0.6 50 7
Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
20 10 000 IE = 0 f = 1 MHz Ta = 25°C 1 000
ICEO Ta
VCE = −120 V
16
12
ICEO (Ta) ICEO (Ta = 25°C)
−10 −100
100
8
10 4
0 −1
1
0
40
80
120
160
200
240
Collector-base voltage VCB (V)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q 60 to 150