PBR951NPN低噪声晶体管产品规格书

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2SC3355NPN晶体管产品规格书

4.2MAX
1.77
12.7MIN
5.5MAX
5.2MAX
0.5
2.54 2
123 TO-92 PIN CONNECTIONS 1：Base 2:Emitter 3:Collector
极限参数（Tamb=25℃）：
参数名称
集电极-基极击穿电压集电极-发射极击穿电压发射极-基极击穿电压集电极电流耗散功率最高结温储存温度
120°
90°
600°
150°
0.2GHz
S21e
30°
180°
2.0GHz 5 10 15 20
0°
-150°
-30°
-120°
-90°
-60°
S12e-FREQUENCY CONDITION:VCE=10V,IC=20mA
120°
90°
2.0GHz
60°
150°
30°
180°
0.2GHz
0.05 0.1 0.15 0.2 0.250°
符号
测试条件
BVCBO BVCEO BVEBO
ICBO IEBO hFE fT Cre ∣S21e∣2 NF
IC=10μA, IE=0 mA IC=1.0mA, IB=0 mA IE=10μA, IC=0 mA VCB=10V,IE=0 mA VEB=1.0V,IC=0 mA VCE=10V,IC=20mA VCE=10V,IC=20mA IE=0 mA,VCB=10V,f=1MHz IC=20mA,VCE=10V,f=1GHz VCE=10V,IC=7mA,f=1GHz
2SC3355 NPN 微波低噪声晶体管
北京鼎霖电子科技
2SC3355NPN TRANSISTOR (NPN)

2N3500、2N3501NPN晶体管产品规格书

2N3500、2N3501 通用 NPN 晶体管北京鼎霖电子科技
2N3500、2N3501 GENERAL PURPOSENPN NPN TRANSISTOR
2N3500、2N3501 通用低功耗 NPN 晶体三极管
极限参数（Tamb=25℃）：
参数名称
集电极-基极击穿电压集电极-发射极击穿电压发射极-基极击穿电压集电极电流耗散功率
-
NF2
VCE=10V,IC=0.5mA,f=10kHz,Rg=1kΩ
16 -
6
开启时间
Ton
IC=150mA,VEB=5V,
-
115
关闭时间
Toff
IC=150mA, IB1= IB2= -15mA
-
1150
注：本品同 Motorrola、Semicoa、Microsemi 等公司的同型号产品的性能相同。
2N3500:35
2N3501:75
-
-
2N3500:40
2N3500:120
2N3501:100
-
2N3501:300
2N3500:15
2N3501:20
-
-
集电极-发射极饱和压降
VCE(sat)
IC=10mA,IB=1.0mA IC=150mA,IB=15mA
-
-
0.2
0.4
基极-发射极饱和压降
VBE(sat)
IC=10mA,IB=1.0mA IC=150mA,IB=15mA
-
-
0.8
-
-
1.2
输出电容
Cobo
IE=0,VCB=10V,100KHz ≤ f ≤
-
-

2SC3356微波低噪声NPN晶体管产品规格书

R24
125～250 R25
北京亦庄经济开发区荣华中路 7 号国融国际 C 座 1008
Fax:010-MENSIONS (Units:mm)
0.4 TYP.
3
Marking
2.8±0.05 1.5±0.025
1
0.4 TYP.
2
1.9±0.05 1.9±0.05
2SC3356 NPN 微波低噪声晶体管
北京鼎霖电子科技
2SC3356NPN TRANSISTOR (NPN)
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 简述：
Lead-free
具有高功率增益放大以及低噪声特性，大动态范围，理想的电流线性；主要应用于超高频微波无线射频放大、VHF、UHF 和 CATV 高频宽带低噪声放大器等电路中；集电极-基极击穿电压：BVCBO≥20V，集电极电流：IC≥100mA,集电极功率：PC≥200mW （SOT-323 封装 PC≥150mW），特征频率：fT=7GHz；可替代 NEC 公司的 2SC3356 等同类参数的高频微波低噪声晶体管；封装形式：SC-59（SOT-23-3L）、SOT-23 或者 SOT-323。
符号
测试条件
BVCBO BVCEO BVEBO
ICBO IEBO hFE fT Cre ∣S21e∣2 NF
IC=10μA, IE=0 mA IC=1.0mA, IB=0 mA IE=10μA, IC=0 mA VCB=10V,IE=0 mA VEB=1.0V,IC=0 mA VCE=10V,IC=20mA VCE=10V,IC=20mA IE=0 mA,VCB=10V,f=1MHz IC=20mA,VCE=10V,f=1GHz VCE=10V,IC=7mA,f=1GHz

BC846系列NPN通用晶体管说明书

BC846 series65 V, 100 mA NPN general-purpose transistorsRev. 9 — 25 September 2012Product data sheet 1.Product profile1.1General descriptionNPN general-purpose transistors in Surface-Mounted Device(SMD) plastic packages.Table 1.Product overviewType number[1]Package PNP complementN experia JEITA JEDECBC846SOT23-TO-236AB BC856BC846W SOT323SC-70-BC856WBC846T SOT416SC-75-BC856T[1]Valid for all available selection groups.1.2Features and benefits⏹General-purpose transistors⏹SMD plastic packages⏹Two different gain selections1.3Applications⏹General-purpose switching and amplification1.4Quick reference dataTable 2.Quick reference dataSymbol Parameter Conditions Min Typ Max UnitV CEO collector-emitter voltage open base--65VI C collector current--100mAh FE DC current gain V CE=5V; I C=2mA110-450h FE group A110180220h FE group B2002904502.Pinning information3.Ordering information[1]Valid for all available selection groups.4.Marking[1]* = placeholder for manufacturing site codeTable 3.PinningPin Description Simplified outline Graphic symbolSOT23, SOT323, SOT4161base 2emitter 3collector006aaa144123sym02131Table 4.Ordering informationType number [1]Package NameDescriptionVersion BC846-plastic surface-mounted package; 3leads SOT23BC846W SC-70plastic surface-mounted package; 3leads SOT323BC846TSC-75plastic surface-mounted package; 3leadsSOT416Table 5.Marking codesType numberMarking code [1]BC8461D*BC846A 1A*BC846B 1B*BC846W 1D*BC846AW 1A*BC846BW 1B*BC846T 1M BC846AT 1A BC846BT1B5.Limiting values[1]Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.6.Thermal characteristics[1]Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.Table 6.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit V CBO collector-base voltage open emitter -80V V CEO collector-emitter voltage open base -65V V EBO emitter-base voltage open collector -6V I C collector current -100mA I CM peak collector current single pulse; t p ≤1ms -200mA I BM peak base current single pulse; t p ≤1ms -200mAP tottotal power dissipation T amb ≤25︒C[1]SOT23-250mW SOT323-200mW SOT416-150mW T j junction temperature -150︒C T amb ambient temperature -65+150︒C T stgstorage temperature-65+150︒CTable 7.Thermal characteristics Symbol ParameterConditions Min Typ Max UnitR th(j-a)thermal resistance fromjunction to ambient in free air[1]SOT23--500K/W SOT323--625K/W SOT416--833K/W7.Characteristics[1]Pulse test: t p ≤300μs; δ=0.02.[2]V BEsat decreases by approximately 1.7mV/K with increasing temperature.[3]V BE decreases by approximately 2mV/K with increasing temperature.Table 8.CharacteristicsT amb =25︒C unless otherwise specified.Symbol ParameterConditions Min Typ Max Unit I CBOcollector-base cut-off currentV CB =30V;I E =0A --15nA V CB =30V;I E =0A; T j =150︒C --5μA I EBO emitter-base cut-off current V EB =5V; I C =0A --100nAh FEDC current gain V CE =5V; I C =10μAh FE group A -180-h FE group B -290-DC current gain V CE =5V; I C =2mA110-450h FE group A 110180220h FE group B200290450V CEsat collector-emitter saturation voltage I C =10mA;I B =0.5mA -90200mV I C =100mA; I B =5mA [1]-200400mV V BEsat base-emittersaturation voltage I C =10mA;I B =0.5mA [2]-760-mV I C =100mA; I B =5mA [2]-900-mV V BE base-emitter voltage I C =2mA; V CE =5V [3]580660700mV I C =10mA;V CE =5V [3]--770mV f T transition frequency V CE =5V; I C =10mA; f =100MHz100--MHz C c collector capacitance V CB =10V;I E =i e =0A; f =1MHz-23pF C e emitter capacitance V EB =0.5V; I C =i c =0A; f =1MHz-11-pF NFnoise figureI C =200μA; V CE =5V; R S =2k Ω; f =1kHz; B =200Hz-210dB8.Package outline9.Packing information[1]For further information and the availability of packing methods, see Section 13.[2]Valid for all available selection groups.Table 9.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Typenumber [2]Package DescriptionPacking quantity 100030004000BC846SOT234mm pitch, 8mm tape and reel -215--235BC846W SOT3234mm pitch, 8mm tape and reel -115--135BC846TSOT4164mm pitch, 8mm tape and reel-115--13510.Soldering11.Revision historyTable 10.Revision historyDocument ID Release date Data sheet status Change notice SupersedesBC846_SER v.920120925Product data sheet-BC846_SER v.8 Modifications:•Table 6 “Limiting values”: P tot values correctedBC846_SER v.820120424Product data sheet BC846_BC546_SER v.7 BC846_BC546_SER v.720091117Product data sheet-BC846_BC546_SER v.6 BC846_BC546_SER v.620060207Product data sheet--12.Legal information12.1 Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term ‘short data sheet’ is explained in section “Definitions”.[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL .12.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia salesoffice. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product isdeemed to offer functions and qualities beyond those described in the Product data sheet.12.3 DisclaimersLimited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an information source outside of Nexperia.In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia.Right to make changes — Nexperia reserves the right to makechanges to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications andproducts planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications andthe products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Document status[1][2]Product status[3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet Production This document contains the product specification.Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use ofnon-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of theproduct for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.12.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.13.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@14. Contents1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 12 Pinning information. . . . . . . . . . . . . . . . . . . . . . 23 Ordering information. . . . . . . . . . . . . . . . . . . . . 24 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36 Thermal characteristics . . . . . . . . . . . . . . . . . . 37 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 48 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 79 Packing information . . . . . . . . . . . . . . . . . . . . . 810 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 911 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1212 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1312.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1312.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1312.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1312.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1413 Contact information. . . . . . . . . . . . . . . . . . . . . 1414 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15© Nexperia B.V. 2017. All rights reserved For more information, please visit: Forsalesofficeaddresses,pleasesendanemailto:*************************** Date of release:Mouser ElectronicsAuthorized DistributorClick to View Pricing, Inventory, Delivery & Lifecycle Information:N experia:BC846BW,135BC846B,235BC846A,215BC846,215BC846W,135BC846AW,135BC846AT,115BC846BW,115 BC846T,115BC846A,235BC846W,115BC846BT,115BC846B,215BC846AW,115。

PBR951晶体管产品规格书

噪声系数
BVCBO BVCES BVEBO ICBO
hFE
Cre fT GUM
NF
IC=0.1mA, IE=0 IC=0.1mA, IB=0 IE=0.01mA, IC=0 VCB=10V,IE=0 VCE=6V,IC=5mA VCE=6V,IC=15mA IC=0,VCE=6V,f=1MHz VCE=6V,IC=30mA, f=1GHz IC=30mA,VCE=6V,f=1GHz IC=30mA,VCE=6V,f=2GHz VCE=6V,IC=5mA,f=1GHz VCE=6V,IC=5mA,f=2GHz
本芯片采用硅外延工艺制造；具有高功率增益放大以及低噪声系数特性, 具有较宽的动态范围，低失真，理想的电流线性；
主要应用于无线遥控、无线通讯、MATV、CATV 放大、雷达感应模块和 RF 通信用户终端等设备上；
其基本性能指标基本等同于进口 PBR951-W2,可以替代；
32 W2
1
SOT-23
封装形式： SOT-23，本体印字：W2；
IC PT TJ Tstg
额定值
20 10 1.5 150 650 150 -65～+150
单位
V V V mA mW ℃ ℃
电参数及规格（Tamb=25℃）：
参数名称
符号
测试条件
集电极-基极击穿电压集电极-发射极击穿电压发射极-基极击穿电压集电极截止电流直流电流放大系数
反馈电容特征频率最大单边功率增益
R0.08
0.1±0.03
0.20(MIN)
PIN CONNECTIONS 1.Base 2. Emitter 3.Collector
0.100±0.01 0.9 2.0

晶体管说明书.pdf_1705816060.0783954

DESCRIPTIONSThe Orange source color devices are made with AlGaInP Light Emitting DiodeElectrostatic discharge and power surge coulddamage the LEDsIt is recommended to use a wrist band oranti-electrostatic glove when handling the LEDs All devices, equipments and machineries must be electrically groundedFEATURES2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Low power consumptionWide viewing angleIdeal for backlight and indicatorPackage: 2000 pcs / reelMoisture sensitivity level: 3RoHS compliantAPPLICATIONSBacklightStatus indicatorHome and smart appliancesWearable and portable devicesHealthcare applicationsATTENTIONObserve precautions for handling electrostatic discharge sensitive devicesPACKAGE DIMENSIONSKPT-2012LVSECK-J4-PRV2.0 x 1.25 mm SMD Chip LED LampRECOMMENDED SOLDERING PATTERN(units : mm; tolerance : ± 0.1)Notes:1. All dimensions are in millimeters (inches).2. Tolerance is ±0.1(0.004") unless otherwise noted.3. The specifications, characteristics and technical data described in the datasheet are subject tochange without prior notice.4. The device has a single mounting surface. The device must be mounted according to the specifications.Part Number Emitting Color(Material)Lens TypeIv (mcd) @ 2mA [2]Viewing Angle [1]Min. Typ. 2θ1/2KPT-2012LVSECK-J4-PRV ■Super Bright Orange(AlGaInP)Water Clear80 150*30 *50140°SELECTION GUIDENotes:1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value.2. Luminous intensity / luminous flux: +/-15%.* Luminous intensity value is traceable to CIE127-2007 standards.ABSOLUTE MAXIMUM RATINGS at T A =25°CELECTRICAL / OPTICAL CHARACTERISTICS at T A =25°CParameterSymbolEmitting ColorValueUnitTyp. Max. Wavelength at Peak Emission I F = 2mA λpeak Super Bright Orange 611 - nm Dominant Wavelength I F = 2mA λdom [1] Super Bright Orange 605-nmSpectral Bandwidth at 50% Φ REL MAX I F = 2mA ΔλSuper Bright Orange17 - nmCapacitanceC Super Bright Orange 27 - pFForward Voltage I F = 2mA V F [2]Super Bright Orange 1.8 2.1 VReverse Current (V R = 5V) I R Super Bright Orange - 10 uAParameterSymbolValue Unit Power Dissipation P D 84 mW Reverse Voltage V R 5 V Junction Temperature T J 115 °C Operating Temperature T op -40 to +85 °C Storage Temperature T stg -40 to +85°C DC Forward Current I F 30 mA Peak Forward CurrentI FM [1] 150 mA Electrostatic Discharge Threshold (HBM)-3000VNotes:1. The dominant wavelength (λd) above is the setup value of the sorting machine. (Tolerance λd : ±1nm. )2. Forward voltage: ±0.1V.3. Wavelength value is traceable to CIE127-2007 standards.4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.Notes:1. 1/10 Duty Cycle, 0.1ms Pulse Width.2. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.TECHNICAL DATASUPER BRIGHT ORANGETAPE SPECIFICATIONS (units : mm)REEL DIMENSION (units : mm) REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESSNotes:1. Don't cause stress to the LEDs while it is exposed to high temperature.2. The maximum number of reflow soldering passes is 2 times.3. Reflow soldering is recommended. Other soldering methods are not recommended as they mightcause damage to the product.PACKING & LABEL SPECIFICATIONSPRECAUTIONARY NOTES1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer tothe latest datasheet for the updated specifications.3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. Ifcustomer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threateningliabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.6. All design applications should refer to Kingbright application notes available at /application_notes。

2SC3583NPN晶体管产品规格书

0.16±0.04
1.1to1.4
0.05±0.03
PIN CONNECTIONS 1.Base 2. Emitter 3.Collector
包装信息 PACKAGE INFORMATION
Package
Shipping
Inner Box
Carton
SC-59
3000pcs/Tape&Reel 5 Tape&Reel 12 Inner Box
Collector 3 1 Base
Emitter 2
3
2
1
SC-59 or SOT-23
极限参数（Tamb=25℃）：
参数名称
集电极-基极击穿电压集电极-发射极击穿电压发射极-基极击穿电压集电极电流耗散功率最高结温储存温度
符号
BVCBO BVCEO BVEBO
IC PT TJ Tstg
PIN CONNECTIONS 1.Base 2. Emitter 3.Collector
SC-59 PACKAGE DIMENSIONS (Units:mm)
0.4 TYP.
3
Marking
2.8±0.05 1.5±0.025
1
0.4 TYP.
2
1.9±0.05 1.9±0.05
2.9±0.05
Marking
R34
额定值典型值
120 9 0.35 13 15 1.2
最大值
0.1 1.0 250 1.0 -
2.0
125～250 R35
单位
V V V μA μA
GHz pF dB dB dB
Tel:010-87220108

FR-5型号NPN Silicon 一般用途转换晶体管说明书

VBE(on) vs. IC
1
0.8
IC=30mA 0.6
IC=10mA IC=100mA
0.4
0.2
IC=1mA
0
0.001
0.01
0.1
1
10
IB, Base Current(mA)
Collector Saturation Region
Leshan Radio Company, LTD.
Rev.B Mar 2016
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
LMBT3904WT1G
S-LMBT3904WT1G
General Purpose Transistors NPN Silicon
1. FEATURES
● We declare that the material of product compliance with RoHS requirements and Halogen Free.
Device
Marking
Shipping
LMBT3904WT1G
AM
3000/Tape&Reel
LMBT3904WT3G
AM
10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)

(整理)常用晶体管参数表 (2)

*
180MHZ
NPN
2SC4024
100V
10A
35W
*
*
NPN
2SC3998
1500V
25A
250W
*
*
NPN
2SC3997
1500V
15A
250W
*
*
NPN
2SC3987
50V
3A
20W
1000
*
NPN(达林顿)
2SC3953
120V
0.2A
1.3W
*
400MHZ
NPN
2SC3907
180V
12A
2SC4582
600V
15A
75W
*
*
NPN
2SC4517
550V
3A
30W
*
*
NPN
2SC4429
1100V
8A
60W
*
*
NPN
2SC4297
500V
12A
75W
*
*
NPN
2SC4288
1400V
12A
200W
*
*
NPN
2SC4242
450V
7A
40W
*
*
NPN
2SC4231
800V
2A
30W
*
*
PNP
2SB1240
40V
2A
1W
*
100MHZ
PNP
2SB1238
80V
0.7A
1W
*
100MHZ
PNP
2SB1185
60V

高频三极管的选用方法和原则 - 北京鼎霖电子科技有限公司

高频三极管的选用方法和原则高频三极管一般应用在VHF，UHF，CATV,无线遥控、射频模块等高频宽带低噪声放大器上,这些使用场合大都用在低电压、小信号、小电流、低噪声条件下，其功率最大2.25瓦，集电极电流最大500毫安，其在使用过程中的选用原则为：1.当三极管使用的环境温度高于30℃时，耗散功率Pcm应降额60-80%使用;电源电压在3.6V、5V的低电压的情况下，击穿电压最好选为12v～15v,不要选2.如果VC择的过大，如果过大（高于18V），势必使得芯片在低压的放大曲线的线性不好，反而影响使用。

使用条件最好同所选芯片测试β的条件相同或者相近；应该高于实际使用频率的六到八倍，以减小使用时的3.选用的高频三极管的截止频率fT噪声并提高有效信号的增益；要较大的4.输入信号较弱时，建议在初级放大使用插入增益稍小但直流放大系数hFE 2SC3356，次级放大选用插入增益较大、直流放大系数h小些的BFQ591或者2SC3357,FE防止发生自激现象；5.充分考虑输入端芯片的分布参数，避免寄生噪声，尽可能减少PCB布线的长度、避免弯曲的线条、宽度要适当，应尽可能的使用表面贴装芯片；6.在PCB布线中，高频三极管应尽量远离发热元件，以保证三极管能稳定正常地工作。

有一些参数容易受温度的影响如Iceo、Vbeo和β值。

其中Iceo和Vbeo随温度变化而变化的情况如下: (1) 温度每升高6℃， Iceo将增加一倍; (2) Vbeo随温度的变化量约为1.7mv/℃；7.如果你的产品具有较大的市场销量，建议直接采购这些器件的半成品圆片颗粒，找组合电路封装厂代工组装一体电路，这样即会减小寄生效应，提高高频性能，又会减小体积、降低成本；8.因为国内SOT-23和SOT-89的封装形式居多，封装成本较低，建议尽可能地选择这两种封装形式的三极管，避免使用其它较少的封装而增加成本；高频三极管的种类很多，因此应根据具体电路的要求来确定三极管的类型，然后根据三极管的主要参数进行选用。

高频三极管的选用方法和原则

高频三极管的选用方法、设计使用原则高频微波低噪声功率晶体三极管管是一种基于N 型外延层的宽带晶体管，具有高功率增益、低噪声的功率特性以及宽频带大动态范围和理想的电流特性。

高频三极管一般应用在卫星电视接收器、电视机顶盒、VHF 、UHF 、CATV 、无线遥控数传、射频模块、微波雷达感应开关模块、无线安防报警器等高频宽带低噪声放大器上,这些使用场合大都用在高频（模拟数字无线信号频率超过300MHz 以上）、低电压、小信号、小电流条件下。

一般情况下，将特征频率f T 在5GHz 以上的三极管芯片称作高频微波三极管。

其功率PCM 最小0.1瓦，最大2.25瓦，集电极电流I C 最小18毫安，最大200毫安，击穿电压VCEO 一般在5V 至16V 之间，其在产品选用以及设计、使用过程中应该注意如下事项：1. 如果集电极直流电源电压V CE 在3.5V 、输入的是接收的小信号时，击穿电压BV CEO 最好选为5-12V, 如果集电极电压BV CEO 在5V 时，击穿电压BV CEO 最好选为10-12V,如果集电极复合电压V CE （也就是直流电压加上交流信号）在12-15V 时，击穿电压BV CEO 最好选为15V 以上。

如果，加在CE 上的交直流复合电压超过芯片的BV CEO 则三极管会击穿烧毁或者处于击穿的临界状态。

一般情况下，V CE 不小于3V , I C 不小于I CM 的四分之一。

如右图所示，要尽可能使工作点在放大区的中心点附近，避免进入击穿区、饱和区、截止区；2. 三极管的最佳工作点-集电极电流I C 和V CE 并不等同于其标称的I CM 和BV CEO ，一般的都是其规格书上测试h FE 和插入增益∣S 21∣2或G UM 时的工作点电流电压，基极上的最佳电压一般都是BV EB0=0.8-1.4V ；；051015V CE (V )I C (mA )20COLLECTOR CURRENT vs.COLLECTOR TO EMRRENT VOLTAGE放大区真击穿区顶失真COLLECTOR CURRENT vs.COLLECTOR TO EMRRENT VOLTAGE3.选用的高频三极管的f T越高，其在高频频段的增益也就越高。

2SC4901NPN高频晶体管规格书

最小值
15 9.0 3.0
50 7 9.5 -
额定值典型值
120 9 0.65 13 1.2
Collector 3 1 Base
Emitter 2
3 YK－2
1
SOT-23
单位
V V V mA mW ℃ ℃
最大值
1.0 1.0 250 1.0 2.5
单位
V V V μA μA
GHz pF dB dB
封装形式外形尺寸
SOT-23 PACKAGE DIMENSIONS (Units:mm)
0.4±0.05
3
2.40±0.05 1.300±0.03
Marking
1
2
0.4 ±0.03
1.90±0.03 2.90±0.05
0.100±0.01
0.970±0.03
R0.08
0.1±0.03
0.20(MIN)
120°
90°
2.0GHz
60°
150°
30°
180°
0.2GHz
0.05 0.1 0.15 0.2 0.250°
-150°
-30°
-120°
-90°
-60°
Tel:010-87220108

Fax:010-87220512
2SC4901 NPN 微波低噪声晶体管
北京鼎霖电子科技
2SC4901 NPN 微波低噪声晶体管
北京鼎霖电子科技
2SC4901NPN TRANSISTOR (NPN)
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 简述：

厚声-晶片电阻器-应用指南说明书

Application Note 应用指南Product Name:Chip Resistor产品名称：晶片电阻器Uniroyal Electronics Global Co., Ltd. 厚声国际贸易(昆山) 有限公司Building # 3, No. 88 Longteng Road, Economic & Technical Development Zone, Kunshan City, Jiangsu Province, China 215333 中国江苏省昆山市经济技术开发区龙腾路88号3号房TEL: +86 512 3687 3924Email: **************/CONTENT目录1SAFETY CONSIDERATION安全注意事项 (1)2USAGE CONSIDERATIONS使用注意事项 (2)3MOUNTING CONSIDERATION安装注意事项 (3)4STORAGE CONSIDERATION存储的注意事项 (7)5EXPORTATION CONSIDERATION出口注意事项 (7)6INDUSTRIAL PROPERTY PROHIBITIONS工业产权禁令 (7)7TECHNICAL GUIDANCE技术指导 (8)8OTHER MATTERS其他事项 (16)NOTES说明 (18)1Safety consideration安全注意事项1.1The products are designed and produced for application in ordinary electronic equipment (AV equipment, telecommunication equipment, home appliances amusement, etc.).If the products are to be used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft, nuclear power controllers, car equipment including car accessories, safety devices, etc.) and whose failure or operational error may endanger human life, please consult with the company，s Sale’s Dept. to advance.产品被设计和生产用于普通电子设备（AV设备、电信设备、家电娱乐等）。

《我的晶体管手册》word版

我的晶体管手册我的晶体管手册晶体管型号Vcbo Icm Pcm 放大特征类型封装推荐使用*晶体管型号Vcbo Icm Pcm 放大特征类型13001 1300V* 1A 高速开关NPN_TO92 日光灯镇流器、袖珍手机充电器13002 1300V* 2A 高速开关N PN_TO126日光灯镇流器、袖珍手机充电器13005 1300V* 5A 高速开关NPN_TO220日光灯镇流器、袖珍手机充电器9011 50V 0.03A 0.4W * 150MHZ NPN9012 * 50V 0.5A 0.6W * 80MHz* PNP 与9013互补9013 * 50V 0.5A 0.6W * 80MHz* NPN 与9 012互补9014 * 50V 0.1A 0.4W * 150MHZ NPN 与9015互补9015 * 50V 0.1A 0.4W * 150MHZ PNP 与9014互补9018 * 30V 0.05A 0.4W * 1G NPN 超高频晶体管型号Vcbo Icm Pcm 放大特征类型2N2222 60V 0.8A 0.5W 45 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2907 60V 0.6A 0.4W 200 * NPN2N3055 100V 15A 115W * * NPN2N3440 450V 1A 1W * * NPN2N3773 160V 16A 150W * * NPN2N5400 * 140V 0.6A 0.625W 60~250 100MHz PNP 高耐压、线性，与2N5550互补2N5401 * 160V 0.6A 0. 6W 80~250 100MHZ PNP 高耐压、线性，与2N5551互补2N5550 * 140V 0.6A 0.625W 60~250 100MHz NPN 高耐压、线性，与2N5400互补2N5551 * 160V 0.6A 0.6W 80~250 100MHZ NPN 高耐压、线性，与2N5401互补2N5685 60V 50A 300W * * NPN2N6277 180V 50A 300W * * NPN2N6678 650V 15A 175W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SA1009 350V 2A 15W * * PNP2SA1012Y 60V 5A 25W * * PNP2SA1013R * 160V 1A 0.9W * 50 PNP 彩电场扫描、音频输出2SA1015R 50V 0.15A 0.4W 70-40 80 MHz PNP 低频、低噪声，与2SC1815互补2SA1018 150V 0.07A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1162 50V 0.15A 0.15W * * PNP2SA1175H 50V 0.1A 0.3W * * PNP2SA1216 180V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1266Y 50V 0.15A 0.4W * * PNP2SA1295 230V 17A 200W * * PNP2SA129950V 0.5A 0.3W * * PNP2SA1300 20V 2A 0.7W * * PNP2SA1301 200V 10A 100W * * PNP2SA1302 200V 15A 150W * * PNP2SA1304 150V 1.5A 25W * * PNP2SA1309A 25V 0.1A 0.3W * * PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1390 35V 0.5A 0.3W * * PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1943 230V 15A 150W * * PNP晶体管型号Vcbo Icm Pcm 放大特征类型2SA562T 30V 0.4A 0.3W * * PNP2SA564A 25V 0.1A 0.25W * * PNP2SA608F * 30V 0.1A 0.25W * 180MHz PNP 视放激励2SA680 30V 0.1A * * 180MHz PNP 彩显视放推动2SA673 * 50V 0.5A 0.4W * * PNP 与C1213互补2SA720-Q 50V 0.5A 0.4W * * PNP2SA778AK 180V 0.05A 0.2W * * PNP2SA904 90V 0.05A 0.2W * * PNP2SA933S 50V 0.1A 0.9W * * PNP2SA940 * 150V 1.5A 1.5W * 4MHz PNP 功放、帧输出，与2SD2073互补2SA945 * 0.07A * * 4500 MHz NPN2SA950Y 150V 0.8A 0.6W * * PNP2SA966Y 30V 1.5A 0.9W * * PNP2SA968Y 160V 1.5A 25W * * PNP晶体管型号Vcbo Icm Pcm 放大特征类型2SB1013A 30V 0.5A 0.3W * * PNP2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1185 60V 3A 25W * 75MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1243 40V 3A 1W * 70MHZ PNP2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1317 180V 15A 150W * * PNP2SB1335 80V 4A 30W * * PNP2SB137560V 3A 2W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1494 120V 25A 120W * * PNP(达林顿）2SB449 50V 3.5A 22W * * PNP2SB564A 45V 0.05 0.25W * * PNP2SB642-R 60V 0.2A 0.4W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB649 180V 1.5A 1W * * PNP2SB669 70V 4A 40W * * PNP(达林顿）2SB675 60V 7A 40W * * PNP(达林顿）2SB686 100V 6A 60W * * PNP2SB688 120V 8A 80W * * PNP2SB734 60V 1A 1W * * PNP2SB744 70V 3A 10W * * PNP2SB772 40V 3A 10W * * PNP2SB774T 30V 0.01A 0.25W * * PNP2SB817 160V 12A 100W * * PNP2SB834 60V 3A 30W * * PNP2SB882 60V - 1.7W * * PNP2SB940 200V 2A 30W * * PNP晶体管型号Vcbo Icm Pcm 放大特征类型2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC1047 30V 0.015A 0.15W * * NPN2SC106 60V 1.5A 15W * * NPN2SC1162 35V 1.5A 10W * * NPN2SC1213D * 50V 0.5A 0.4W * * NPN 与A673互补2SC1214C 50V 0.5A 0.6W * * NPN与2SD1817互补，IGBT驱动2SC1222 60V 0.1A 0.25W * 100 MHZ NPN2SC1317-R 30V 0.5A 0.4W * * NPN2SC1360 50V 0.05A 0.5W * * NPN2SC1494 36V 6A 40W * 175MHZ NPN2SC1507 300V 0.2A 15W * * NPN2SC1514 300V 0.1A 1.25W * * NPN2SC1569 300V 0.15A 1.5W * * NPN2SC1573A 250V 0.07A 0.6W * * NPN2SC1627Y 80V 0.3A 0.6W * * NPN2SC1674 30V 0.02A 0.1W * * NPN2SC1685 30V 0.1A 0.25W * * NPN2SC1685Q 30V 0.1A 0.25W * * NPN2SC1740 50V 0.3A 0.3W * * NPN2SC1815Y * 60V 0.15A 0.4W 70-700 80MHz NPN 与2SA1015互补2SC1827 80V 4A 30W * * NP N2SC18462SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1875 50V 0.15A 0.4W * * NPN2SC1890A 120V 0.05A 0.3W * * NPN2SC1906 30V 0.05A 0.3W * * NPN2SC1923 40V 0.02A 0.1W * * NPN2SC1942 1500V 3A 100W * * NPN2SC1959 30V 0.4A 0.5W * * NPN2SC1983R 80V 3A 30W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC2027 * 1500V 5A 50W * * NPN2SC2073 150V 1.5A 25W 40~140 4 NPN 功放、帧输出，与2SA940互补2SC2068 270V 0.2A 0.62W * * NPN 彩电视放输出管（200V）2SC2073 150V 1.5A 25W * * NPN2SC2120Y 30V 0.8A 0.6W * * NPN2SC2125 2200V 5A 50W * * NPN2SC2168 200V 2A 30W * * NPN2SC2188 45V 0.05A 0.6W * * NPN2SC2190 450V 5A 100W * * NPN2SC2216 50V 0.05A 0.3W * * NPN2SC2229 200V 0.05A 0.8W * * NPN2SC2236 30V 1.5A 0.9W * * NPN2SC2238 160V 1.5A 25W * * NPN2SC2258 250V 0.1A 1W * * NPN2SC227 300V 0.1A 0.75W * * NPN2SC2271N 300V 0.1A 0.75W * * NPN2SC2371 300V 0.1A 10W * * NPN2SC2377 20V 0.015A 0.2W * * NPN2SC2377C 30V 0.15A 0.2W * * NPN2SC2383Y 160V 1A 0.9W * * NPN2SC2456 300V 0.1A 10W * * NPN2SC2481 * 150V 1.5A 20W NPN2SC2482 * 150V 0.1A 0.9W * * NPN 行激励推动（110V）2SC2568 300V 0.2A 10W * * NPN2SC2570A 25V 0.07A 0.6W * * NPN2SC2594 40V 5A 10W * * NPN2SC2610 300V 0.1A 0.8W * * NPN2SC2611 300V 0.1A 1.25W * * NPN2SC2621 300V 0.2A 10W * * NPN2SC2636Y 30V 0.05A 0.4W * * NPN2SC2653H 250V 0.2A 15W * * NPN2SC2655Y 60V 2A 0.9W * * NPN2SC2688 300V 0.2A 10W * * NPN2SC27172SC2785 60V 0.1A 0.3W * * NPN2SC2839 30V 0.1A 0.1W * * NPN2SC2878 50V 0.3A 0.4W * * NPN2SC2923 300V 0.2A 15W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC304CD 60V 0.5A 0.8W * * NPN2SC3063 300V 0.1A 1.2W * * NPN2SC3114 60V 0.15A 0.2W * * NPN2SC3153 900V 6A 100W * * NPN2SC3198G 60V 0.15A 0.4W * * NPN2SC3265Y 30V 0.8A 0.2W * * NPN2SC3271 300V 0.1A 5W * * NPN2SC3279 30V 2A 0.75W * * NPN2SC3300 100V 15A 100W * * NPN2SC3310 * 300/500V5A 40W 20 * NPN 全塑封2SC3320 500V 15A 80W * * NPN2SC3328 80V 2A 0.9W * * NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3399 50V 0.1A 0.3W * * NPN2SC3402 50V 0.1A 0.3W * * NPN2SC3413C 40V 0.1A 0.5W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC3457 1100V 3A 50W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3480 1500V 3.5A 80W * * NPN2SC3481 1500V 5A 120W * * NPN2SC3482 1500V 6A 120W * * NPN2SC3484 1500V 3.5A 80W * * NPN2SC3485 1500V 5A 120W * * NPN2SC3486 1500V 6A 120W * * NPN2SC3505 900V 6A 80W 12 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3679 900V 5A 100W * * NPN2SC3680 900V 7A 120W * * NPN2SC3685 1500V 6A 120W * * NPN2SC3686 1500V 7A 120W * * NPN2SC36871500V 8A 150W * * NPN2SC3688 1500V 10A 150W * * NPN2SC3720 1200V 10A 200W * * NPN2SC3729 1500V 5A 50W * * NPN2SC3783 900V 5A 100W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC380 35V 0.03A 0.25W * * NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC383 20V 0.05A 0.2W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3883 1500V 5A 50W * * NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC388A 20V 0.02A 0.2W * * NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN 高频高功率2SC3953 * 120V 0.2A 1.3/8W * 400MHZ NPN 高频高功率彩电视放2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3997 1500V 15A 250W * * NPN2SC3998 1500V 25A 250W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC4024 100V 10A 35W * * NPN2SC403 50V 0.1A 0.1W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN 超高频2SC4059 600V 15A 130W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN2SC4111 1500V 10A 250W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4122 1500V 6A 60W NPN 内含阻尼器彩显行管2SC4123 1500V 7A 60W NPN 内含阻尼器彩显行管2SC4124 1500V 8A 70W NPN 内含阻尼器彩显行管2SC4125 1500V 10A 70W NPN 内含阻尼器彩显行管2SC4199A 1500V 10A 100W * * NPN2SC4231 800V 2A 30W * * NPN2SC4242 450V 7A 40W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4291 1500V 5A 100W * * NPN2SC4292 1500V 6A 100W * * NPN2SC4293 1500V 5A 50W NPN 内含阻尼器彩显行管2SC4269 1500V 7A 60W NPN 内含阻尼器彩显行管2SC42941500V 6A 50W NPN 内含阻尼器彩显行管2SC4297 500V 12A 75W * * NPN2SC4303A 1500V 6A 80W * * NPN2SC4429 * 1100V 8A 60W * * NPN 电源管2SC4517 550V 3A 30W * * NPN2SC4582 600V 15A 75W * * NPN2SC4589 1500/800V10A 50W NPN2SC458D 30V 0.1A 0.2W * * NPN2sc4706 900V 14A 130W * 6MH NPN2sc4742 1500V 6A 50W * * NPN( 带阻尼) 2sc4745 1500V 6A 50W * * NPN2sc4747 1500V 10A 50W * * NPN2sc4769 1500V 7A 60W * * NPN( 带阻尼) 2sc4913 2000V 0.2A 35W * * NPN2sc4924 800V 10A 70W * * NPN2sc4927 1500V 8A 50W * * NPN2SC4935 0.2A 8W NPN 视放输出2sc4941 1500V 6A 65W * * NPN2sc4953 500V 2A 25W * * NPN2SC495Y 70V 0.8A 5W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SC5020 1000V 7A 100W * * NPN2SC5068 1500V 10A 50W * * NPN2SC5086 1500V 10A 50W * * NPN2SC5088 1500V 10A 50W * * NPN2SC5132 1500V 16A 50W * * NPN2SC5200 230V 15A 150W * * NPN2SC5207 1500V 10A 50W * * NPN2SC5243 1500V 15A 200W * * NPN2SC5244 1500V 15A 200W * * NPN2SC5250 1000V 7A 100W * * NPN2SC5251 1500V 12A 50W * * NPN2SC5252 1500V 15A 100W * * NPN2SC5297 1500/800V8A 50W NPN2SC8502 NPN 彩显航管行管晶体管型号Vcbo Icm Pcm 放大特征类型2SC536F 40V 0.1A 0.25W * * NPN2SC752G 40V 0.2A 0.2W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC828 45V 0.05A 0.25W * * NPN2SC90030V 0.03A 0.25W * 100MHz NPN2SC945 50V 0.1A 0.25W * 4.5G NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD1010 50V 0.05A 0.3W * * NPN2SD1016 1500V 7A 50W * * NPN2SD1025 200V 8A 50W * * NPN(达林顿) 2SD1037 150V 30A 180W * * NPN2SD1047 160V 12A 100W * * NPN2SD1078 50V 2A 20W * * NPN2SD1133 70V 4A 40W * * NPN2SD1138C 150V 2A 30W * * NPN2SD1142 1500V 3.5A 50W * * NPN2SD1143 1500V 5A 65W * * NPN2SD1163A 350V 7A 40W * 60MHZ NPN2SD1172 1500V 5A 65W * * NPN2SD1173 1500V 5A 70W * * NPN2SD1174 1500V 5A 85W * * NPN2SD1175 1500V 5A 100W * * NPN2SD1175 1500V 5A 100W * * NPN2SD1219 1500V 3A 65W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD1226 60V 3A 35W * * NPN2SD1246 30V 2A 0.75W * * NPN2SD1264A 200V 2A 30W * * NPN2SD1266 60V 3A 35W * * NPN2SD1271A 130V 7A 40W * * NPN2SD1273 80V 3A 40W * 50MHZ NPN2SD1274A 150V 5A 40W * * NPN2SD1290 1500V 3A 50W * * NPN2SD1302 25V 0.5A 0.5W * 200MHZ NPN 2SD1341 1500V 5A 50W * * NPN2SD1342 1500V 5A 50W * * NPN2SD1343 1500V 6A 50W * * NPN2SD1344 1500V 6A 50W * * NPN2SD1378 80V 0.7A 10W * * NPN2SD1391 1500V 5A 80W * * NPN2SD1396 1500V 2.5A 50W * * NPN2SD1397 1500V 3.5A 50W * * NPN2SD13981500V 5A 50W * * NPN2SD1399 1500V 6A 60W * * NPN2SD1402 1500V 5A 120W * * NPN2SD1403 1500V 6A 50W * * NPN2SD1405Y 50V 3A 30W * * NPN2SD1410 1500V 3.5A 80W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD1415 80V 7A 40W 6000 * NPN(达林顿) 2SD1416 80V 7A 40W 6000 * NPN(达林顿)晶体管型号Vcbo Icm Pcm 放大特征类型2SD1426 1500V 3.5A 80W * * NPN2SD1426 1500V 3.5A 80W * * NPN2SD1427 1500V 5A 80W * * NPN2SD1428 1500V 6A 80W * * NPN2SD1431 1500V 5A 80W * * NPN2SD1431 1500V 5A 80W * * NPN2SD1432 1500V 6A 80W * * NPN2SD1433 1500V 7A 80W * * NPN2SD1434 1700V 5A 80W * * NPN2SD1454 1700V 4A 50W * * NPN2SD1455 1500V 5A 50W * * NPN2SD1455 1500V 5A 50W * * NPN2SD1456 1500V 6A 50W * * NPN2SD1480 80V 4A 25W * * NPN2SD1497 1500V 6A 50W * * NPN2SD1499 100V 5A 40W * * NPN2SD1541 1500V 3A 50W * * NPN2SD1541 1500V 3A 50W * * NPN2SD1544 1500V 3.5A 40W * * NPN2SD1545 1500V 5A 50W * * NPN2SD1546 1500V 6A 50W * * NPN2SD1547 1500V 7A 50W * * NPN2SD1548 1500V 10A 50W * * NPN2SD1554 1500V 3.5A 40W * * NPN2SD1555 1500V 5A 50W * * NPN2SD1556 1500V 6A 50W * * NPN2SD1559 100V 20A 20W 5000 * NPN(达林顿) 2SD1577 1500V 5A 80W * * NPN2SD1585 60V 3A 15W * * NPN2SD1590 150V 8A 25W 15000 * NPN(达林顿)晶体管型号Vcbo Icm Pcm 放大特征类型2SD16321500V 4A 70W * * NPN2SD1635 1500V 5A 100W * * NPN2SD1640 120V 2A 1.2W 4000-40000* NPN(达林顿)2SD1650 1500V 3.5A 50W * * NPN2SD1651 1500V 5A 60W * * NPN2SD1652 1500V 6A 60W * * NPN2SD1653 1500V 2.5A 50W * * NPN2SD1654 1500V 3.5A 50W * * NPN2SD1655 1500V 5A 60W * * NPN2SD1656 1500V 6A 60W * * NPN2SD1710 1500V 6A 100W * * NPN2SD1711 1500V 7A 100W * * NPN2SD1718 180V 15A 3.2W * 20MHZ NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD1729 1500V 3.5A 60W * * NPN2SD1730 1500V 5A 100W * * NPN2SD1731 1500V 6A 100W * * NPN2SD1732 1500V 7A 120W * * NPN2SD1737 1500V 3.5A 60W * * NPN2SD1738 1500V 5A 100W * * NPN2SD1739 1500V 6A 100W * * NPN2SD1762 60V 3A 25W * 90MHZ NPN2SD1817 50V* 0.5A* 0.6W* * * NPN与B1214互补,IGBT驱动2SD1847 50V 1A 1W * * NPN(低噪)2SD1876 1500V 3A 50W * * NPN2SD1877 800V 4A 50W * * NPN2SD1878 1500V 5A 60W * * NPN2SD1879 1500V 6A 60W * * NPN2SD1880 1500V 8A 70W * * NPN2SD1881 1500V 10A 70W * * NPN2SD1882 1500V 3A 50W * * NPN2SD1883 1500V 4A 50W * * NPN2SD1884 1500V 5A 60W * * NPN2SD1885 1500V 6A 60W * * NPN2SD1886 1500V 8A 70W * * NPN2SD1887 1500V 10A 70W * * NPN2SD1911 1500V 5A 50W * * NPN2SD1930100V 2A 1.2W 1000 * NPN(达林顿)2SD1941 1500V 6A 50W * * NPN2SD1975 180V 15A 150W * * NPN2SD1978 120V 1.5A 1W 30000 * NPN(达林顿)2SD1980 100V 2A 10W 1000-10000* NPN(达林顿)2SD1993 50V 0.1A 0.4W * * NPN2SD1994 60V 1A 1W * * NPN2SD1997 40V 3A 1.5W * 100MHZ NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD2008 80V 1A 1.5W * * NPN2SD2012 * 60V 3A 26/2W * * NPN 彩显行幅调整2SD2027 1500V 5A 50W * * NPN2SD2036 60V 1A 1.2W * * NPN2SD2057 1500V 5A 100W * * NPN2SD2155 180V 15A 150W * * NPN2SD2156 120V 25A 125W 2000-20000 * NPN(达林顿)2SD2334 1500V 5A 80W * * NPN 2SD2335 1500V 7A 100W * * NPN2SD2388 90V 3A 1.2W * * NPN(达林顿)2SD2445 1500V 12.5A 120W * * NPN2SD325 50V 3A 25W * * NPN2SD348 1500V 7A 50W * * NPN2SD3505 900V 6A 50W * * NPN2SD385 100V 7A 30W * * NPN( 达林顿)2SD400 25V 1A 0.75W * * NPN2SD401AK 200V 2A 25W * * NPN2SD40C 40V 0.5A 40W * * NPN( 达林顿)2SD415 120V 0.8A 5W * * NPN2SD438 500V 1A 0.75W * 100MHZ NPN2SD547 600V 50A 400W * * NPN2SD553Y 70V 7A 40W * * NPN2SD560 150V 5A 30W * * NPN(达林顿)2SD601AR 60V 0.1A 0.2W * * NPN2SD667 120V 1A 0.9W * 140MHZ NPN(达林顿)2SD669 180V 1.5A 1W * 140MHZ NPN2SD773 20V 2A 1W * * NPN2SD774 100V 1A 1W * * NPN2SD787 20V 2A 0.9W * * NPN2SD788 20V 2A 0.9W * * NPN2SD789 100V 1A 0.9W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD880 * 60V 3A 60WNPN 塑封12V稳压调整2SD802 900V 6A 50W * * NPN2SD819 1500V 3.5A 50W * * NPN2SD820 1500V 5A 50W * * NPN2SD821 1500V 6A 50W * * NPN2SD822 1500V 7A 50W * * NPN2SD838 2500V 3A 50W * * NPN2SD850 1500V 3A 25W * * NPN2SD852 1500V 5A 70W * * NPN2SD869 1500V 3.5A 50W * * NPN2SD869 1500V 3.5A 50W * * NPN2SD870 1500V 5A 50W * * NPN2SD870 1500V 5A 50W * * NPN2SD871 1500V 6A 50W * * NPN2SD871 1500V 6A 50W * * NPN2SD880 60V 3A 30W * * NPN2SD8806 60V 3A 30W * * NPN2SD882 40V 3A 10W * * NPN晶体管型号Vcbo Icm Pcm 放大特征类型2SD898B 1500V 3A 50W * * NPN2SD899A 1500V 4A 50W * * NPN2SD900B 1500V 5A 50W * * NPN2SD903 1500V 7A 50W * * NPN2SD904 1500V 7A 60W * * NPN2SD905 1400V 8A 50W * * NPN2SD906 1400V 8A 50W * * NPN2SD950 1500V 3.5A 80W * * NPN2SD951 1500V 3A 65W * * NPN2SD952 1500V 3A 70W * * NPN2SD953 1500V 7A 95W * * NPN2SD954 1500V 5A 95W * * NPN2SD957A 1500V 6A 50W * * NPN2SD965 40V 5A 0.75W * * NPN2SD966 60V 5A 1W * * NPN2SD973 30V 1A 1W * * NPN2SD994 1500V 8A 50W * * NPN2SD995 2500V 3A 50W * * NPN2SDK55 400V 4A 60W * * NPN晶体管型号Pd Id Vdss 放大特征类型2SK1117 * 100W 6A 600V NMOS 开关电源彩显2SK1118 * 45W 6A 600VNMOS 开关电源彩显2SK1217 100W 8A 900V2SK1215 0.1W 0.03A 20V 贴片2SK1611 * 50W 3A 800V NMOS 开关电源彩显2SK301-Q 0.25W 0.14A * NMOS2SK301-R 0.25W 0.14A * NMOS6N60 (200)W 6A 600V NMOS 塑封7N80 (200)W 7A 800V NMOS 塑封开关电源8N90 (200)W 8A 900V NMOS 塑封8N100 (200)W 8A 1000V NMOS 塑封7P5 200W 7A 500V PMOS 塑封晶体管型号Vcbo Icm Pcm 放大特征类型BC307 50V 0.2A 0.3W * * PNPBC327 50V 0.8A 0.6W * * PNPBC337 50V 0.8A 0.6W * * NPNBC338 50V 0.8A 0.6W * * NPNBC546 80V 0.2A 0.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPNBC548B 30V 0.2A 0.5W * * NPNBC636 45V 1A 0.8W * * PNPBD135 45V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD138 60V 1.5A 12.5W * * PNPBD140 ? ? ? ? ? NPN达林顿_TO126彩显灯丝休眠大电流BD237 100V 2A 25W * * NPNBD238 100V 2A 25W * * PNPBD243 45V 6A 65W * * NPNBD244 45V 6A 65W * * PNPBD652 PNP TO220BD681 100V 4A 40W * * NPNBD682 100V 4A 40W * * PNPBD941F 120V 3A 19W * * NPNBF324 30V 0.26A 0.25W * * PNPBF458 250V 0.1A 10W * * NPN晶体管型号Vds Id Po 放大特征类型BS170 60V 0.3A 0.63W * * NMOS场效应晶体管型号Vcbo Icm Pcm 放大特征类型BU108BU208A 1500V 5A 12.5W * * NPNBU208D 1500V 5A 12.5W * * NPNBU209A 1700V 5A 12.5W * * NPNBU2506 1500V 7A 50W * * NPNBU2508 700V 8A 125W * * NPNBU2508DF Wanstrow1428型彩显采用内含阻尼器BU2520 800V 10A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2532 1500V 15A 150W * * NPNBU308 1500V 5A 12.5W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BU406 400V 7A 60W * * NPNBU500 1500V 6A 75W * * NPNBU508A 1500V 7.5A 75W * * NPNBU508A 1500V 8A 125W * * NPNBU508AF 1500/700V8A 40W NPNBU508D 1500/700V8A 40W NPNBU508DF 1500/700V8A 34W NPNBU806 400V 8A 60W * * NPNBU932R 500V 15A 150W * * NPNBUH515 1500V 10A 80W * * NPN西门子公司VMOS管品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）BUK426 125 40 0.04 50 TO3P 4 菲利普公司BUK627 125 10 0.8 500 TO3P 5 菲利普公司BUS13A 1000V 15A 175W * * NPNBUS14A 1000/400V30A 250W * * NPNBUT11 1500V 5A 80W * * NPNBUT11A * 1000V 5A 100W * * NPNBUT11AF * 1000V 5A 100W NPN 电脑修眠电源开关管BUT12A 450V 10A 125W * * NPNBUV26 90V 14A 65W * * NPNBUV28ABUV48A 450V 15A 150W * * NPNBUW13A 1000V 15A 150W * * NPNBUX84 800V 2A 40W * * NPNBUX98A 400V 30A 210W * * NPNBUY71 2200V 2A 40W * * NPN西门子公司VMOS管品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）BUZ331 125 8 0.8 500 TO3P 5BUZ347 125 40 0.03 50 TO3P 5BUZ349 125 32 0.08 100 TO3P 6BUZ350 125 22 0.1 200 TO3P 8BUZ355 125 8 1.5 800 TO3P 8BUZ357 125 5 2 1000 TO3P 9BUZ380 125 5.5 2 1000 TO3P 10BUZ385 125 10 0.7 500 TO3P 6晶体管型号Pcm Icm Vbeo 放大特征类型BUT11A 100W 30A 400V NMOS 金封开关电源及同步电机驱动BUT11AF 100W 5A 1000V NMOS 塑封电脑备用电源开关管BUZ11A 75W 25A 50V NMOSBUZ20 75W 12A 100V NMOS晶体管型号Vcbo Icm Pcm 放大特征类型BUZ11A 50V 25A 75W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应晶体管型号Vcbo Icm Pcm 放大特征类型DTC114ES 50V 0.1A 0.25W * * NPNDTC124ES 50V 0.1A 0.25W * * PNP晶体管型号Vds Id Po 放大特征类型HP2369 * 25 70mA 8W 4.5G 彩显视放推动塑封晶体管型号Vcbo Icm Pcm 放大特征类型MJ10012400V 10A 175W * * NPN(达林顿)MJ10015 400V 50A 200W * * NPNMJ10016 500V 50A 200W * * NPNMJ10025 850V 20A 250W * * NPNMJ11032 120V 50A 300W * * NPNMJ11033 120V 50A 300W * * NPNMJ13333 400V 20A 175W * * NPNMJ15024 400V 16A 250W * * NPNMJ15025 400V 16A 250W * * PNPMJ2955 60V 15A 115W * * PNPMJ3055 60V 15A 115W * * NPNMJ4502 90V 30A 200W * * PNPMJE13003 400V 1.5A 14W * * NPNMJE13005 400V 4A 60W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE2955T 60V 10A 75W * * NPNMJE340 300V 0.5A 20W * * NPNMJE350 300V 0.5A 20W * * NPNMN650 1500V 6A 80W * * NPN晶体管型号Vds Id Po 放大特征类型MTP6N60 600V 6A NMOS 塑封晶体管型号Vcbo Icm Pcm 放大特征类型RN1204 50V 0.1A 0.3W * * NPN晶体管型号Vcbo Vceo Icm Pcm 放大特征类型S8050 * 40V 25V 0.5A 625mW 150MHz TO-92.NPN_EBCS8050LT1 40V 25V 0.5A 0.3W 120-350 150MHz SOT-32.NPN_BEC(贴片）S8550 40V 25V 0.5A 625mW 1 50MHz TO-92.PNP_EBCS8550LT1 40V 25V 0.5A 0.3W 120-350 150MHz SOT-32.PNP_BEC(贴片）SG8050 * 40V 25V 0.8A 625m W 40-135 100MHz TO-92.NPN_EBCSG8050B 40V 25V 0.8A 625mW 85-160 100MHz TO-92.NPN_EBCS G8050C * 40V 25V 0.8A 625mW 120-200 100MHz TO-92.NPN_EBCSG8050D * 40V 25V 0.8A 625mW 1 60-300 100MHz TO-92.NPN_EBC晶体管型号Vcbo Icm Pcm 放大特征类型TIP102 100V 8A 2W * * NPNTIP120 60V 8A 2/65W R1=5K R2=105 NPN_BCE 达林顿TO-220TIP121 80V 8A 2/65W R1=5K R 2=105 NPN_BCE 达林顿TO-220TIP122 100V 8A 2/65W R1=5K R2=105 NPN_BCE 达林顿TO-220TIP 125 60V 8A 2/65W R1=5K R2=105 PNP_BCE 达林顿TO-220TIP126 80V 8A 2/65W R1=5K R2=105 PNP_BCE 达林顿TO-220TIP127 100V 8A 2/65W R1=5K R2=105 PNP_BCE 达林顿TO-220TIP142 100V10A 125W * * NPNTIP147 100V 10A 125W * * PNPTIP31C 100V 3A 40W * * NPNTIP32C 100V 3A 40W * * PNPTIP35C 100V 25A 125W * * NPNTIP36C 100V 25A 125W * * PNPTIP41 40V 6A 65W * fT=3M NPN_BCE 达林顿TO-220TIP41A 60V 6A 65W * fT=3M NPN_BC E 达林顿TO-220TIP41B 80V 6A 65W * fT=3M NPN_BCE 达林顿TO-220TIP41C 100V 6A 65W * fT=3M NPN_BCE 达林顿TO-220TIP42 40V 6A 65W * fT=3M PNP_BCE 达林顿TO-220TIP42A 60V 6A 65W * fT=3M PNP_BCE 达林顿TO-220TIP42B 80V 6A 65W * fT=3M PNP_BCE 达林顿TO-220TIP42C 100V 6A 65W * fT=3M PNP_BCE 达林顿TO-220晶体管型号Vcbo Icm Pcm 放大特征类型UN4111 50V 0.1A 0.25W * * PNPUN4211 50V 0.1A 0.25W * * NPNUN4212 50V 0.1A 0.25W * * NPNUN4213 50V 0.1A 0.25W * * NPN*****************************************************************************【CMOS管资料大全】晶体管型号Vds Id Pd 放大特征类型IRF120 100V 8A 40W * * NMOS场效应IRF121 60V 8A 40W * * NMOS场效应IRF122 100V 7A 40W * * NMOS场效应IRF123 60V 7A 40W * * NMOS场效应IRF130 100V 14A 75W * * NMOS场效应IRF131 60V 14A 75W * * NMOS场效应IRF132 100V 12A 75W * * NMOS场效应IRF133 60V 12A 75W * * NMOS场效应IRF140 100V 27A 125W * * NMOS场效应IRF141 60V 27A 125W * * NMOS场效应IRF142 100V 24A 125W * * NMOS场效应IRF143 60V 22A 125W * * NMOS场效应IRF150 100V 40A 150W * * NMOS场效应IRF151 60V 40A 150W * * NMOS场效应IRF152 100V 33A 150W * * NMOS场效应IRF153 60V 33A 150W * * NMOS场效应IRF220 200V 5A 40W * * NMOS场效应IRF221 150V 5A 40W * * NMOS场效应IRF222200V 4A 40W * * NMOS场效应IRF223 150V 4A 40W * * NMOS场效应IRF230 200V 9A 75W * * NMOS场效应IRF231 150V 9A 75W * * NMOS场效应IRF232 200V 8A 75W * * NMOS场效应IRF233 150V 8A 75W * * NMOS场效应IRF240 200V 18A 125W * * NMOS场效应IRF241 150V 18A 125W * * NMOS场效应IRF242 200V 16A 125W * * NMOS场效应IRF243 150V 16A 125W * * NMOS场效应IRF250 200V 19A 150W * * NMOS场效应低导通电阻IRF251 150V 19A 150W * * NMOS场效应低导通电阻IRF252 200V 16A 150W * * NMOS场效应低导通电阻IRF253 150V 16A 150W * * NMOS场效应低导通电阻晶体管型号Vds Id Pd 放大特征类型IRF330 400V 5.5A 75W * * NMOS效应IRF331 350V 5.5A 75W * * NMOS场效应IRF332 400V 4.5A 75W * * NMOS场效应IRF333 350V 4.5A 75W * * NMOS场效应IRF340 400V 10A 125W * * NMOS场效应IRF341 350V 10A 125W * * NMOS场效应IRF342 400V 8A 125W * * NMOS场效应IRF343 350V 8A 125W * * NMOS场效应IRF350 400V 15A 150W * * NMOS场效应IRF351 350V 15A 150W * * NMOS场效应IRF352 400V 13A 150W * * NMOS场效应IRF353 350V 13A 150W * * NMOS场效应IRF360 400V 25A 300W * * NMOS场效应IRF420 500V 2.5A 40W * * NMOS场效应IRF421 450V 2.5A 40W * * NMOS场效应IRF422 500V 2.5A 40W * * NMOS场效应IRF423 450V 2.5A 40W * * NMOS场效应IRF430 500V 4.5A 75W * * NMOS场效应IRF431 450V 4.5A 75W * * NMOS场效应IRF432 500V 4A 75W * * NMOS场效应IRF433 450V 4A 75W * * NMOS场效应IRF440IRF441 450V 8A 125W * * NMOS场效应IRF442 500V 7A 125W * * NMOS场效应IRF443 450V 7A 125W * * NMOS场效应IRF450 500V 8A 150W * * NMOS场效应IRF451 450V 8A 150W * * NMOS场效应IRF452 500V 7A 150W * * NMOS场效应IRF453 450V 7A 150W * * NMOS场效应IRF460 500V 21A 300W * * NMOS场效应IRF510 100V 2.5A 20W * * NMOS场效应IRF511 60V 2.5A 20W * * NMOS场效应IRF512 100V 2A 20W * * NMOS场效应IRF513 60V 2A 20W * * NMOS场效应IRF520 100V 8A 40W * * NMOS场效应IRF521 60V 8A 40W * * NMOS场效应IRF522 100V 7A 40W * * NMOS场效应IRF523 60V 7A 40W * * NMOS场效应IRF530 100V 14A 75W * * NMOS_GDS场效应IRF531 60V 14A 75W * * NMOS场效应IRF532 100V 12A 75W * * NMOS场效应IRF533 60V 12A 75W * * NMOS场效应IRF540 * 100V 27A 125W * * NMOS场效应IRF541 60V 27A 125W * * NMOS场效应IRF542 100V 24A 125W * * NMOS场效应IRF543 60V 22A 125W * * NMOS场效应塑封晶体管型号Vds Id Pd 放大特征类型IRF610 200V 3.3A 43W * * NMOS场效应IRF610 200V 2.5A 20W * * NMOS场效应IRF611 150V 2.5A 20W * * NMOS场效应IRF612 200V 2A 20W * * NMOS场效应IRF613 150V 2A 20W * * NMOS场效应IRF620IRF621 150V 5A 40W * * NMOS场效应IRF622 200V 4A 40W * * NMOS场效应IRF623 150V 4A 40W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF631 150V 9A 75W * * NMOS场效应IRF632 200V 8A 75W * * NMOS场效应IRF633 150V 8A 75W * * NMOS场效应IRF640 * 200V 18A 125W * * NMOS场效应IRF641 150V 18A 125W * * NMOS场效应IRF642 200V 16A 125W * * NMOS场效应IRF643 * 150V 16A 125W * * NMOS场效应晶体管型号Vds Id Pd 放大特征类型IRF710 400V 1.5A 20W * * NMOS场效应IRF711 350V 1.5A 20W * * NMOS场效应IRF712 400V 1.3A 20W * * NMOS场效应IRF713 350V 1.3A 20W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF731 350V 5.5A 75W * * NMOS场效应IRF732 400V 4.5A 75W * * NMOS场效应IRF733 350V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF741 350V 10A 125W * * NMOS场效应IRF742 400V 8A 125W * * NMOS场效应IRF743 350V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF831 450V 4.5A 75W * * NMOS场效应IRF832 500V 4A 75W * * NMOS场效应IRF833 450V 4A 75W * * NMOS场效应IRF840 * 500V 8A 125W * * NMOS场效应IRF841 450V 8A 125W * * NMOS场效应IRF842 500V 7A 125W * * NMOS场效应IRF843 * 450V 7A 125W * * NMOS场效应晶体管型号Vds Id Pd 放大特征类型IRF9530IRF9531 60V 12A 75W * * PMOS场效应IRF9541 60V 19A 125W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应晶体管型号Vds Id Pd 放大特征类型IRFF110 100V 3.5A 15W * * NMOS场效应IRFF111 100V 3.5A 15W * * NMOS场效应IRFF112 100V 3A 15W * * NMOS场效应IRFF113 100V 3A 15W * * NMOS场效应IRFF120 100V 6A 24W * * NMOS场效应IRFF121 60V 6A 24W * * NMOS场效应IRFF122 100V 5A 20W * * NMOS场效应IRFF123 60V 5A 20W * * NMOS场效应IRFF130 100V 8A 25W * * NMOS场效应IRFF131 60V 8A 25W * * NMOS场效应IRFF132 100V 7A 25W * * NMOS场效应IRFF133 60V 7A 25W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应晶体管型号Vds Id Pd 放大特征类型IRFP054 60V 65A 180W * * NMOS场效应IRFP140 100V 30A 150W * * NMOS场效应IRFP150IRFP240 200V 19A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRFU020 50V 15A 42W * * NMOS场效应晶体管型号Vds Id Pd 放大特征类型K707 120W 25A 250V NMOSK719 120W 5A 900V NMOSK1120 150W 8A 1000V NMOSK1271 ? ? 1200V* NMOS 塑封550V开关电源K1518 120W 20A 500V NMOSK2101 NMOS 全塑30W开关电源●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●●品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）TP15N06 40 15 0.08 50 T0251 1.0BUZ11 75 30 0.05 60 TO220 2.5SMP60N06 125 60 0.018 60 TO220 3.0V40A T 40 3 1 60 TO220 1.8V40BT 40 3 1.5 120 TO220 2.0V40DT 40 2 3 500 TO220 2.8V75A T 75 5 0.35 60 TO220 2V75BT 75 4.5 0.5 120 TO220 2.3V75CTV75DT 75 5 1 500 TO220 3.5品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）IRFBC40 125 6.2 12 600 TO220 2.5IRF510 43 5.6 0.41 100 TO220 1.5IRF610 43 3.3 1.2 200 TO220 1.5IRF710 36 2 3. 3 400 TO220 1.5IRF520 60 9.2 0.25 100 TO220 2.0IRF620 40 5 0.5 200 TO220 2.0IRF720 50 3.3 1.6 400 TO220 2.0IRF820 50 2.5 2.9 500 TO220 2.0IRF530 79 14 0.12 100 TO220 2.5IRF630 75 9 0.25 200 TO220 2.5IRF730 74 5.5 0.93 400 TO220 2.5IRF830 74 4.5 1.4 500 TO220 2.5IRF540 150 28 0.06 100 TO220 3.0IRF640 125 18 0.18 200 TO220 3.0IRF740 125 10 0.42 400 TO220 3.0IRF840 125 8 0.85 500 TO220 3.0TO220NP配对品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）IRF520 9520对 60 9.2 0.25 +/-100 T0220 5.0IRF530 9530对 79 14 0.12 +/-100 TO220 6.0 IRF540 9540对 150 28 0.06 +/-100 TO220 8.0IRF640 9640对 125 18 0.18 +/-200 TO220 10T03P封装VMOS管品名功率电流导阻电压封装单价购买备注（W）（A）（Ω）（V）（元）IRFP150 180 41 0.055 100 T03P 12IRFP250 180 31 0.085 200 T03P 12IRFP350 180 16 0.3 400 T03P 8.0IRFP450 180 14 0.35 500 T03P 8.0IRFP360 250 23 0.2 400 T03P 12IRFP460 250 20 0.27 500 T03P 12IRFP264 280 38 0.075 250 TO3P 14 拆机保用IRFP064 300 98 0.018 60 TO3P 14 拆机保用IRFPE20 125 2.5 0.5 1000 TO3P 6SMW40N10 125。

晶体管商品说明书

Features• Epitaxial Planar Die Construction• Complementary PNP Types Available (DDTB) • Built-In Biasing Resistors• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) •For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https:///quality/product-definitions/Mechanical Data• Case: SOT23• Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020• Terminals: Finish – Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208•Weight: 0.008 grams (Approximate)Ordering Information (Note 4)ProductStatus Compliance Marking Reel size (inches)Tape width (mm)Quantity per reelDDTD122LC -7-F Obsolete Standard N75 7 8 3,000 DDTD142JC -7-F Active Standard N76 7 8 3,000 DDTD122TC -7-F Obsolete Standard N77 7 8 3,000 DDTD142TC -7-FObsolete StandardN78 7 83,000Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.2. See https:///quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/.Marking InformationDate Code KeyYear 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 20312032 CodeI J K L M N O P R S T UMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct NovDec Code123456789ONDDevice SchematicSOT23Top View132GND (0)C BINOUTEEquivalent Inverter CircuitXXX = Product Type Marking Code, See Table Above YM = Date Code Marking Y = Year ex: I = 2021M = Month ex: 9 = September XXXY MAbsolute Maximum Ratings (@ T A = +25°C, unless otherwise specified.)Thermal Characteristics (@ T A = +25°C, unless otherwise specified.)CharacteristicSymbol Value Unit Power Dissipation (Note 5)P D 200 mW Thermal Resistance, Junction to Ambient Air (Note 5) R θJA 625 °C/W Operating and Storage Temperature RangeT J , T STG-55 to +150°CNote: 5. Mounted on FR4 PC board with recommended pad layout.-5005010015025020015050100T , AMBIENT TEMPERATURE (C)Fig. 1 Power Derating CurveA °P , P O W E R D I S S I P A T I O N (m W )dElectrical Characteristics - R1, R2 Types (@ T A = +25°C, unless otherwise specified.)Characteristic Symbol Min Typ Max Unit Test ConditionInput Voltage DDTD122LCDDTD142JC V l(off)0.30.3 V V CC = 5V, I O = 100µA DDTD122LCDDTD142JC V l(on)2.02.0 VV O = 0.3V, I O = 20mAV O = 0.3V, I O = 20mAOutput Voltage V O(on) 0.3V V I O/I l = 50mA/2.5mAInput Current DDTD122LCDDTD142JC I l 2813 mA V I = 5VOutput Current I O(off) 0.5 µA V CC = 50V, V I = 0VDC Current Gain DDTD122LCDDTD142JC G l5656 V O = 5V, I O = 50mAGain-Bandwidth Product (Note 6) f T 200 MHz V CE = 10V, I E = 5mA, f = 100MHzElectrical Characteristics - R1- Only, R2- Only Types (@ T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV CBO50 V I C = 50µACollector-Emitter Breakdown Voltage BV CEO40 V I C = 1mAEmitter-Base Breakdown Voltage DDTD122TCDDTD142TC BV EBO5 VI E = 50µAI E = 50µACollector Cut-Off Current I CBO 0.5 µA V CB = 50VEmitter Cut-Off Current DDTD122TCDDTD142TC I EBO0.50.5 µA V EB = 4VCollector-Emitter Saturation Voltage V CE(sat) 0.3 V I C = 50mA, I B = 2.5mADC Current Transfer Ratio DDTD122TCDDTD142TC h FE100100250250600600 I C = 5mA, V CE = 5VGain-Bandwidth Product (Note 6) f T 200 MHz V CE = 10V, I E = -5mA, f = 100MHz Note: 6. Transistor – For Reference OnlyPackage Outline DimensionsPlease see /package-outlines.html for the latest version.SOT23SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.502.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.803.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mmSuggested Pad LayoutPlease see /package-outlines.html for the latest version.SOT23。

晶体管产品说明书.pdf_1718684251.5232172

Dimensions: [mm]1) X = Datecode; Y = ControlcodeBCB(mm)min.1.5T e m p e r a t u r eT pT LCautions and Warnings:The following conditions apply to all goods within the product series of WE-TVS High Speed of Würth Elektronik eiSos GmbH Co. KG:General:•This electronic component is designed and developed with the intention for use in general electronic equipment.•Würth Elektronik must be asked for a written approval (following the certain PPAP procedure) before incorporating the components into any equipment in the field such as military, aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc. where higher safety and reliability are especially required and/or if there is the possibility of direct damage or human injury.•Electronic components that will be used in safety-critical or high-reliability applications, should be pre-evaluated by the customer. •The component is designed and manufactured to be used within the datasheets specified values. If the usage and operation conditions specified in the datasheet are not met, the wire insulation may be damaged or dissolved.•Do not drop or impact the components, the component may be damaged•Würth Elektronik products are qualified according to international standards, which are listed in each product reliability report. Würth Elektronik does not warrant any customer qualified product characteristics beyond Würth Elektroniks’ specifications, for its validity and sustainability over time.•The responsibility for the applicability of the customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products also apply to customer specific products.Product specific:Soldering:•The solder profile must comply with the technical product specifications. All other profiles will void the warranty.•All other soldering methods are at the customer’s own risk.Cleaning and Washing:•Washing agents used during the production to clean the customer application might damage or change the characteristics of the body, the marking or the plating. Washing agent may have a negative effect on the long term functionality of the productPotting:•If the product is potted in the customer application, the potting material might shrink or expand during and after hardening. Shrinking could lead to an incomplete seal, allowing contaminants into the component body, pins or termination. Expansion could damage the components. We recommend a manual inspection after potting to avoid these effects.Storage Conditions:• A storage of Würth Elektronik products for longer than 12 months is not recommended. Within other effects, the terminals may suffer degradation, resulting in bad solderability. Therefore, all products shall be used within the period of 12 months based on the day of shipment.•Do not expose the components to direct sunlight.•The storage conditions in the original packaging are defined according to DIN EN 61760-2.•The storage conditions stated in the original packaging apply to the storage time and not to the transportation time of the components. Packaging:•The packaging specifications apply only to purchase orders comprising whole packaging units. If the ordered quantity exceeds or is lower than the specified packaging unit, packaging in accordance with the packaging specifications cannot be ensured. Handling:•Violation of the technical product specifications such as exceeding the nominal rated current will void the warranty.•The TVS Diode is not designed for voltage stabilization with continuous power dissipation.•The exposure of steam, saline spray, atmosphere with reduced oxygen content, corrosive gases, rain or condensation and direct sunlight shall be prohibited.•Signals operated continuously with a high ratio of direct-current voltage might have an influence on the product life time•The temperature rise of the component must be taken into consideration. The operating temperature is comprised of ambient temperature and temperature rise of the component.The operating temperature of the component shall not exceed the maximum temperature specified.These cautions and warnings comply with the state of the scientific and technical knowledge and are believed to be accurate and reliable.However, no responsibility is assumed for inaccuracies or incompleteness.Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODRoD001.0022023-05-05DIN ISO 2768-1mDESCRIPTIONWE-TVS TVS Diode – High SpeedSeries ORDER CODE8240136SIZE/TYPE BUSINESS UNIT STATUS PAGEImportant NotesThe following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the areas, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibility for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime cannot be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component. Therefore, customer is cautioned to verify that data sheets are current before placing orders. The current data sheets can be downloaded at .3. Best Care and AttentionAny product-specific notes, cautions and warnings must be strictly observed. Any disregard will result in the loss of warranty.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve specific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Section 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a standard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability expectancy before or when the product for application design-in disposal is considered. The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG. Würth Elektronik eiSos GmbH & Co. KG does not warrant or represent that any license, either expressed or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, application, or process in which Würth Elektronik eiSos GmbH & Co. KG components or services are used.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODRoD001.0022023-05-05DIN ISO 2768-1mDESCRIPTIONWE-TVS TVS Diode – High SpeedSeries ORDER CODE8240136SIZE/TYPE BUSINESS UNIT STATUS PAGE。

R.F. elettronica di Rota F. 低功率晶体管产品选择手册说明书

1Low power transistors selection guide up to 1/2WC A S Egeneral purpose RF – IFlow noisegood dynamic IC ≤ 100 mA high dynamic IC > 100 mAamplifier > 2.5 GHzor Ft ≥ 8GHzFt ≥ 20GHzoscillatorlow voltage low cons- umptionSOT 23 SOT 323BFR 92A BFQ 81 - 29P BFR 93A BFR 540BFR 520BFR 92A BFT 25 BFT 92 BFR 93A BFR 520 BFR 540 MMBR 901MRF1027BFQ 81 BRF 182 NE 85633 BFR 182 BFS 17 BFR 182 W BFR 106 BFR 182 WBFT 92 oscillatore low noiseBSR 14BFR 520-540MMBR 901MRF 1027NE 85633SoT 143 SoT 343AT 00511 BFG 67 - 93A MRF 9511 BFG 540 MRF 1027 BFP 405BFG 425W BFP 405 BFG 92A BFG520 - 540X BFG 520 BFG 10X MRF 9511 BFP 420 BFP 405 BFP 420 HSMX 3655HBFP 0420 BFP 193 BFG 540 XMRF 5711 BFP 450 BFP 420 BFP 450 BFP 181 - 182 BFP 196 BFG 10XBFP 520 HBFP0420BFP 520183 -196 - 405 BFP 450 BFP 183 - 405HBFP 0420up to 12 GHz HBFP0420420 - 520 420 - 450AT 00511 BFG 425W BFG 425W BFP 520MRF 5711 BFG 520 - 540up to 15 GHzMRF 1027 BFP181 - 183BFG 92ASoT 89BFQ 540 BFQ 19BFQ 17-18A BFQ 540 BFQ 540SoT 223BFG 541 BFG 35 BFG 198BFG 235BFG 97 -198 BFG 135-235BFG 541 BFG 193 BFG 541-591SoT 37plasticBFR 90ABFR 91A BFQ 32 BFR 134 BFR 34A BFR 34ABFR 91A BFR 90ABFR 96 S +40dBm IP3 BFW 92SoT 103plastic2SC 1070 BFG 195 AT 42085-86 MRF 559 AT 42085-86 AT42085-86MRF 559AT 41486 AT 41486MRF 536 BFG 96 MRF 536low noise oscillator AT 41486BFG 195SoT 103 SoT 173ceramic or golden ceramicBFQ 70 BFQ 66 AT 42035-10 21dBm 2 GHz AT42035-10+20.5 dBm a 4 GHz AT 420… BFQ 70 BFQ 71 BFQ 74 BFR 14C BFQ 71BFQ 75 BFR 14C BFQ 57 - 72 BFQ 57 BFQ 76BFQ 77 BFQ 73S HXTR 2101 BFQ 58 NE 21935BFP 91AHXTR 6103BFQ 75 HXTR 310221dBm 2 GHzBFQ 57-58BFQ 76 BFQ 66-74NE 21935HXTR 210118dBm 4 GHzBFQ 77-58AT 41410NE 21935AT 41410To 72 To 18 metallicBF155-161-185BFW 302N 5179 high gain2SC 787BFX 89BF 155 BFY 90BFW 30BF 1552N 51792N 22212N 23692N 2894To 92 plastico BF 199BF 497BF 199BF 509BF 5092N 39042SC 2347 To 39 metall. 2N 16132N 51092N 5108 power oscillator2N 1711BFY 64BFY 64BFW 44case with heatsink transistors used as medium and high power oscillatorHXTR 4103 NEX 2302-65 BFR 14C -BFQ 57-58NOTE: = PNP transistorNE 243287 -2N 38662This table groups various devices suitable as HIGH DYNAMIC and MODERATE NOISE front-ends or post-amplifiers. Here are quoted only the informations associated with noise, gain and dynamic. Other informations and prices are available on the catalog pages. The purpose of this page is to group different devices (IC - FET - power transistors - GaAsFET - power modules, etc..) all suitable for for high dynamic in receptioncod.type NF and Gainvs. frequency and current absorptiondynamicIP3 - IMD - 1dBCP ( P1dB)AT 420… up to 2 GHz transistor, wide band Norton circuit 100-500MHz (VHF Comm 2-93) with results : 10 dB G Ic 10 mA 1.1dB NF IIP3 +17dBm -- Ic 16 mA 1.3 dB NF IIP3 +20dBm -- Ic 23 mA 1.5dB NF IIP3 +22dBmATF 54143 GaAsFet Phemt type they are a last generation GaAs-FETs especially designed as front-end for base stations so they have high dynamic and very low noise, suitable for 50-3000MHz band. OIP3 +36dBmBGD 802 + MHW 5222A etc… CATV A class powermodules18 - 24 dBG 5-1000 MHz wide band,comprehensive descriptions in the nextpages, MHW 5222A has a particular verylow NF 3.5 - 4.5 dBvery high dynamichigh OIP3 > +40 dBmBF982 - 996 low power dual gateFET2 or 4 FETs in parallel or push-pull give a good dynamic with a low NFsee article on EL. World 3-96BFG 135 up to 2 GHz trans. 50 MHz 23dBG 2dBNF @ 30 mA900 MHz 14dBG 2.1dBNF @ 30mA OIP3 + 38 dBm @ 100 mA , very good as HF-VHF-UHF second stage( see various articles )BFG 235 up to 1.5 GHz trans. 900 MHz 12dBG 2.7dBNF @ 60mA OIP3 + 40 dBmBFG 195 up to 2 GHz trans.150 MHz - 1.3 dBNF @ 20 mA500 MHz - 1.7dBNF @ 50 mA opt. IMD Ic 20 - 80 mA (see article on RR 11-98 in config. Norton config.)BFG 541 up to 2.5 GHz trans.900 MHz 1.9dBNF 15dBG OIP3 +34dBm Ic 40 mABFG 591 up to 1 GHz trans.500 MHz - 17dBG @ 70 mA opt. IMD Ic 60 - 80 mABFP 196 up to 2 GHz trans.900 MHz 16dBG with 50 mA OIP3 + 35dBm with 70 mABFP 450 up to 4 GHz trans. 1.8 GHz - 1.8 dBNF - 14dBG @ 50 mA 1.8 GHz : IP3 +29dBm P1dB +19dBm BFQ17+18A up to 500 MHz trans. thiese devices were designed for A class TV IMD Ic 60 mA and 80 mABFQ 32pnp up to 900 MHz trans.500 MHz 3.8 dBNF 14 dBG @ 50 mA complementary of the famous BFR96 BFQ 70 up to 2 GHz trans.800 MHz 18dBG 1.5 dBNF with 20 mA IP3 +27.5 dBm with only 20 mABFQ 73S up to 1 GHz trans.200 MHz 2.5dBNF - 22dBG @ 50 mA 800 MHz Ic 50 mA : IP3 +35 dBmIMD -60dBc with 2 400mV tones BFQ 540 up to 1.3 GHz trans.900 MHz 2dBNF - 13dBG @ 40 mA Ic 40 - 50 mABFR 540 up to 2 GHz trans.900 MHz 2dBNF OIP3 + 34dBm with 40 mA2N5109 2N5108 these devices are widely known uand used for IF , HF and VHF, they have a good dynamicTO39 transistorup to 500 MHzsimilar typesfamous Norton circuit with transformer toobtain a 1 - 150 MHz wide band9dBG @ 80 mAOIP3 + 37dBm Ic 80mAcrossmodulat. -57dBc with 5 mW outand low noise 3dBNF @ 30 MHz2N5179BFW 30up to 500 MHz trans. 21 dBG @ 200 MHz OIP3 +34 dBmDV 1205 S DV 1210 S power FET respectively with a bias of 0.5A and 1 A (if they are used in transmission they provide 5W, or 10W in A class). They have about 7dB NF in VHFHXTR 5102 > 1 GHz transistor 500 MHz 4 dBNF Ic 25mAMRF 559 up to 1 GHz trans.at 500 MHz 4dBNF 14dBG @ 80 mA3dBNF 14dBG @ 30 mA1dBCP 0.5Wvarious types medium powerbroad bandGaAsFetvery good impedance matching with lowVHF-UHF NF , 0.2 - 0.3 dBNF - 20 dBGOIP3 +25dBmCLY 10 *******************@400mA P1dB +33dBm OIP3 +47dBmCGY 21 MMIC for CATV 20-1100 MHz < 4dBNF 20dBG @ 160mA OIP3 +32.5dBm @ 160 mA GPA…..GPD…..MWA…..HF VHF MMIC see more detailed specifications in “ MMIC GPA GPD UTO MWA series “ERA 5 MMIC GaAsFet dc 1 GHz <4.5 dBNF 20 dBG @ 65 mA OIP3 + 33dBm @ 65 mAMGA 62563 MMIC GaAsFet it is the wide band component with the lowest noise and good dynamic that we have,see MMIC wide band amplifiers section for a more detailed explanationMRF 136 PowerFet TMOSvery high dynamicMRF136, with 28 Vcc and 0.5 A of current (14 W of bias), is exactly in the condition togive20WRFpower,************************************************noise amplifier has an extremely high dynamic range.MRF 171MAALSS0034 MMIC with a NF of 1.6-1.8 dB in VHF-UHF the P1dB is +22dBmSL 611C I.C. IF amplif. Plessey IF high dynamic as amplifier and also as AGC on AM - SSB receivers See various articles on VHF Communications 2 -96 , 2-92 , 4-74 , 2-93and on RR 5-91 , 11-98 , 7/8-03。

semicoa 2n2905a 硅pnp晶体管数据表说明书

Data SheetDescriptionSemicoa Semiconductors offers:• Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2905AJ) • JANTX level (2N2905AJX) • JANTXV level (2N2905AJV) • JANS level (2N2905AJS) • QCI to the applicable level• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS• Radiation testing (total dose) upon requestPlease contact Semicoa for special configurationswww.SEMICOA .com or (714) 979-1900Applications• General purpose • Low power• PNP silicon transistorFeatures• Hermetically sealed TO-39 metal can • Also available in chip configuration • Chip geometry 0600 •Reference document: MIL-PRF-19500/290Benefits• Qualification Levels: JAN, JANTX, JANTXV and JANS• Radiation testing availableAbsolute Maximum RatingsT C = 25°C unless otherwise specifiedParameter Symbol Rating UnitCollector-Emitter Voltage V CEO 60 Volts Collector-Base Voltage V CBO 60 Volts Emitter-Base Voltage V EBO 5 Volts Collector Current, Continuous I C 600 mA Power Dissipation, T A = 25 °CDerate above 60 °CP T 0.85.7 W mW/°C Power Dissipation, T C = 25 °C Derate above 25 °C P T3.0 17.2 W mW/°C Thermal ResistanceR θJA175 °C/W Operating Junction Temperature T J -65 to +200 °C Storage TemperatureT STG-65 to +200°CData SheetELECTRICAL CHARACTERISTICScharacteristics specified at T A = 25°COff CharacteristicsParameter Symbol TestConditionsMinTypMaxUnits Collector-Emitter Breakdown Voltage V(BR)CEO I C = 10 mA 60 VoltsCollector-Base Cutoff Current I CBO1V CB = 60 Volts 10 µACollector-Base Cutoff Current I CBO2V CB = 50 Volts 10 nACollector-Base Cutoff Current I CBO3V CB = 50 Volts, T A = 150O C 10 µACollector-Emitter Cutoff Current I CES V CE = 60 Volts 1 µAEmitter-Base Cutoff Current I EBO1V EB = 5 Volts 10 µAEmitter-Base Cutoff Current I EBO2V EB = 3.5 Volts 50 nAOn Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol TestConditionsMinTypMaxUnitsDC Current Gain h FE1h FE2h FE3h FE4h FE5h FE6I C = 0.1 mA, V CE = 10 VoltsI C = 1.0 mA, V CE = 10 VoltsI C = 10 mA, V CE = 10 VoltsI C = 150 mA, V CE = 10 VoltsI C = 500 mA, V CE = 10 VoltsI C = 10 mA, V CE = 10 VoltsT A = -55O C751001001005050450300Base-Emitter Saturation Voltage V BEsat1V BEsat2I C = 150 mA, I B = 15 mAI C = 500 mA, I B = 50 mA1.32.6VoltsCollector-Emitter Saturation Voltage V CEsat1V CEsat2I C = 150 mA, I B = 15 mAI C = 500 mA, I B = 50 mA0.41.6VoltsDynamic CharacteristicsParameter Symbol TestConditionsMinTypMaxUnitsMagnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |h FE|V CE = 20 Volts, I C = 50 mA,f = 100 MHz2.0Small Signal Short Circuit Forward Current Transfer Ratio h FEV CE = 10 Volts, I C = 1 mA,f = 1 kHz100Open Circuit Output Capacitance C OBO V CB = 10 Volts, I C = 0 mA,100 kHZ < f < 1 MHz8pFOpen Circuit Input Capacitance C IBO V EB = 2.0 Volts, I E = 0 mA,100 kHZ < f < 1 MHz30pFSwitching CharacteristicsSaturated Turn-On Time t on45nsSaturated Turn-Off Time t off300 ns。