WIW1012-1-253中文资料
高分子物理 第4章 聚合物的分子量和分子量分布
无须对角度和浓度外推; 可以用很稀的溶液测定,不须对浓度外推; 光散射的测定成为快速且精度很高的方法。 分子量测定范围 1×102~1×106
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★ 第 四 章
第二节 聚合物分子量的测定方法
六、粘度法
目前测定聚合物分子量最常用的方法。 设备简单,操作便利,精度较好 纯溶剂的液面流经两条刻度线所需 时间为流出时间 t0 ; 以溶液的流出时间为 t ;
化学化工学院
★ 第 四 章
第二节 聚合物分子量的测定方法
五、光散射法
当光束进入介质时,除了入射光方向外,其他方向 上也能看见光的现象称为光散射 。 散射光强与以下因素有关:
1)入射光波长; 2)溶液的折光指数; 3)溶液浓度; 4)溶质的分子量及溶质与溶剂之间的相互作用; 5)散射角; 6) 观察点与散射中心的距离.
奥氏 乌氏
乌氏粘度计液体流出时间与贮液球中液体体积无关, 因此可以在粘度计中将溶液逐渐稀释,测定不同浓度的粘 度而不必要更换溶液,所以又称为“稀释粘度计”。
★ 第 四 章
第二节 聚合物分子量的测定方法
六、粘度法
1、粘度表示法 相对粘度: 增比粘度: 比浓粘度:
r 0 t t0
sp r 1 t t0 t0
分布宽度指数:
Polydispersity index
试样中各个分子量与平均分子量之间差值的平方平均值.
M Mn
2 n
2
Mw M2 1 n n Mn
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第四章
Mn
w(M)
M
Mw
MZ
M
图4-4 分子量分布曲线和各种统计平均分子量
062冒险岛中英文NPC对照表
10000 - Pi o皮奥1001000 - S ilver赛尔文1001001- Na tash a娜塔莎1001100-Mi na米娜1002000- Phi l比尔1002001 - T eo特奥1002002-Pa son佩森1002003 - Mr. G ol ds tein智慧爷爷1002004- VI PCa b明珠港星级出租车1002005- M r.K im金先生1002006 - Ch ef吉夫1002100 -Jane简1002101-O laf坤1010100- Rin a丽娜1011000 - K arl卡尔1011001-S am山姆1011100- Lun a卢娜1012000 - R egula r Cab射手村中巴1012001 - Dr.Squin t差不多医生1012002- Vic ious比休斯1012003- Ch ief S tan长老斯坦1012004- Do ofus科尔1012005-Cloy科洛伊1012006 -Tra in er Bar tos巴特斯1012007 -Tr ai nerFrod巴罗德1012008 -C as ey凯茜1012009- Mr. Le e李先生1012100 - At henaPie rc e赫丽娜1012101 -Maya玛亚1012102- Pia皮亚1012103 -Na ta lie娜塔丽1012104 -B rit ta ny伯丽特1012105 - Ms.Tan沃美妮1012106- Mrs. Min g M in g明明女士1012107 - Utah尤塔1012108- Ca mila卡米拉1012109- Jay亚华1012110 -A nne桉1012111 -Bruce布鲁斯1012112- To ry达尔利1012113- T om my达尔米1012114 - Grow lie兴儿1020000 - Blac kbull酋长1021000- Ri ver利伯1021001-H arry慧丽1021100 -A rtu ro格里高利1022000 -Dance s w it hBalr og武术教练1022001 -Re gu larCab勇士部落中巴1022002-M anji麦吉1022003 -M r.Th un der辛德1022004 - Mr. S mi th斯密斯1022005 - Mr.Wan g王先生1022006 - Wi nston芳博士1022007 - A yan伊安1022008-B urnt Swo rd灰渣里的剑1022100- Sop hia索非亚1022101 -Ro on ey露妮1022102- The Ex ca va torBoar d遗迹发掘队布告栏1031000 -F lora theFairy妖精佛罗拉1031001- Ser abit heFa ir y妖精舍拉比1031100 -Lent he Fai ry妖精莲1032000 -Re gu larCab魔法林中巴1032001-Gr ende l th e Rea llyO ld汉斯1032002 -Franc ois易德1032003 -Shan e赛恩1032004 -L ou is路易斯1032005 - VI P C ab魔法林星级出租车1032006 -M r.Pa rk朴先生1032007- Joe l售票员1032008 -Cherr y检票员1032009 -P urin船员普林1032100-A rwen the Fair y妖精艾温1032101- Row en th e Fai ry妖精罗雯1032102 - Ma r the Fa ir y妖精玛丽1032103- ElMot h阿尔莫斯1032104 - B etty巴缇1032105- Est elle胡小姐1032106- Win g th e Fai ry妖精维英1040000- Luk e鲁克1040001 -M ik e麦克1040002 - Fanz y潘喜1043000 - a pile off low er s花簇1043001 - a pile ofh er bs草药丛1051000 - Cu tth ro at Man ny曼斯塔1051001- D onH wang玛帕1051002 -D r.Fa ym us铭仁1052000- Ale x阿勒斯1052001 -DarkLord达克鲁1052002- JM From thaStr ee tz后街吉姆1052003- Chr is克利思1052004 - Denm a the Ow ne r黛玛院长1052005 - Dr.Fee bl e差不多医生1052006- Jak e冬青1052007 - T he Ti cketGat e检票口1052008 - Tr easur e C he st宝箱1052009 -Treas ureC he st宝箱1052010- Tre asu reC hest宝箱1052011 -E xit出口1052012 - Mong from Ko ng马龙1052013 - Co mpute r电脑1052014 - V endin g Mac hin e自动售货机1052015 -Billy比利1052016- Re gular Cab废都中巴1052017 - M r. Ho ng洪先生1052100 -DonGiova nni钱老板1052101- And re安德里亚1052102-Shum i休咪1052103 -Nel la内拉1052104 - Tu lcus图里卡斯1052105 - J ane D oe不认识的女人1052106 - I carus伊卡路斯1061000 -C hris hrama克利斯拉玛1061001 -24 H r 禁止词语leS tor e24小时排档1061002- Mr. Sw ea tb otto m豪素夫1061003- Mr.We tbot tom泰素夫1061004 -Ro nn ie洛尼1061005- Sab itr am a萨比特拉玛1061006- Mys ter io us Sta tue奇怪的石像1061007-Cr umbl ingStatu e坍塌的石像1061008- Mr. Oh吴先生1061009-Door ofDimen sion异界之门1061010 - S parkl ingC rys ta l闪耀的水晶1061011- The Re me mb erer记忆者1061012 -Ins ig ni fica nt B eing无意义存在者1061013 -Gwin葛温1061100 -Ho te l Re cept ionis t宾馆服务员1063000- a p ile o f pin k f lo we rs粉红色花簇1063001 -a p il eofb lueflowe rs蓝花簇1063002- a p ile o f whi tefl ow ers白花簇1063003 -W ant ed: G.Mush room绿蘑菇通缉牌1063004 -Want ed :Curse Ey e风独眼兽通缉牌1063005- Wan ted:E vilEye火独眼兽通缉牌1063006-Want ed : Cold Eye冰独眼兽通缉牌1063007- Wan ted: Z.M us hroo m僵尸蘑菇通缉牌1063008-Wa nted : H. Mus hroom刺蘑菇通缉牌1063009- Wan ted: Jr.Bo ogie幼魔精灵通缉牌1063010 -W an ted: Dr ake青龙通缉牌1072000- Wa rrio r Job Inst ruc to r战士转职教官1072001 - Ma gic ia nJobInst ructo r魔法师转职教官1072002 - B owman JobIns tr uc tor弓箭手转职教官1072003 -Th ie f Jo b In struc tor飞侠转职教官1072004 -Warri or Jo b I ns tr ucto r战士转职教官1072005 -M ag icia n Jo b Ins truct or魔法师转职教官1072006 -Bowma n J obI nstr ucto r弓箭手转职教官1072007- Th iefJob I nstru cto r飞侠转职教官1081000 - Vale n拜伦1081001 - P ison派申1081100-Riel丽尔1081101 -R oel露尔1081102 - Rael拉尔11000-S id赛德11100 -Lucy露茜12000 -L ucas路卡斯12100- M ai麦加12101 - Rain瑞恩2000-Ro ger罗杰20000 - John约翰20001 -Bari白瑞德20002- B ig gs比格斯2001 - Se n珊2001000- Cli ff克里夫2001001- B ra nc h Sn owma n树枝雪人2001002-M etal Buc ket S nowma n罐头雪人2001003 - Stra w Hat Sn ow ma n草帽雪人2001004 - Sc arfS no wman围巾雪人2001005- Ru pe rt珞巴特2002 - Pe ter彼特2002000 -Rupi鲁皮2002001 -R ud i 鲁迪2002002- Tor r 头羊2003- Rob in罗宾2004 -To dd透德2005- Sam叁20100-Yo ona尤娜2010000 - St affS er gean t Ch arlie查里中士2010001 -M inothe O wner米努2010002- Fra nz th e Own er弗兰克2010003 - Neve奈巴2010004- Cor pora l Wil son瑞撒上等兵2010005 - S huri贵英2010006-Trin a小刘2010007 -Her ac le哈拉克2010008 - Lea蕾雅2012000- Aga tha桑艺2012001-R ini田菲2012002 - Er in阿霖2012003 -NeritheF air y妖精娜丽2012004 -NuritheF ai ry妖精诺丽2012005 -Ede lth e Fa iry妖精易多2012006-Pl atfo rm U sher艺斯2012007-Rinz the Assi stant利纳斯2012008 - R omi罗米2012009-R izatheAssis tant利嘉2012010- Elm a the Hous eke ep er保姆珥玛2012011 - Kr ielt he Fai ry妖精珂丽尔2012012-Li sa莉萨2012013- Sun ny斯娜2012014 -Orbis Magi c S po t天空之城魔法石2012015 -E l N at hMagi c Sp ot冰封雪域魔法石2012016 -A ilee n莎米2012017 -H ug hestheFuse秀兹2012018-Eric sson艾利逊2012019 -M op pie波达2012020 - Al fon seG reen阿尔冯丝小绿2012021 -Ra mi ni娜米2012022- Pel ace帕拉斯2012023- Map le Le afMa rb le枫叶霜2012024 - Eg net温莉2012025 - Gera s帮佣易克2013000 -Wonk y the Fair y雅典娜女神2013001- Cha mberl ainE ak伯坚2013002 -Miner vath eGodd ess斯考特2020000 -Vo ge n伯坚2020001 - Scot t斯考特2020002 -Gordo n高登2020003- Ma ster Serg eantFox珀斯上尉2020004 - Mr. Moh amm ed武先生2020005 - A lcast er阿尔卡斯特2020006 - Ja de杰德2020007 -S cadu r斯卡德2020008-Ty lus泰勒斯2020009 -R obe ir a鲁碧2020010 - R ene蕾妮2020011 -Arec艾瑞克2022000 -R um i卢米2022001 - Hana哈娜2022002- Ba run巴兰2022003-S hamm os邪摩斯2022004- T yl us泰勒斯2030000 - Jeff杰夫2030001- Se rgean t Bra vo巴伯下士2030002- Cor poral Ea sy伊吉上等兵2030003 - Rock Co ve re d in Sno w雪岩2030004 -S ma llT omb小墓地2030005 -St at ue雕像2030006- Hol y S to ne神圣的石头2030007 - Pi eceo fStat ue石像的碎片2030008 -A do bis阿杜比斯2030009 -Gli bb er格里巴2030010 - Amon阿们2030011- Al i阿尔利2030012-H uckl e何克2030013 -Ado bi s阿杜比斯2030014 - Anci entI cy Sto ne上古冰2032000- ????助手2032001 - S pirun a斯皮罗纳2032002 - Aura奥拉2032003- Lir a利拉2032004 -Sus pi ci ousLava熔岩2040000 -Me l美尔2040001 - D elvt heTo ySold ier玩具兵得利巴2040002-O lson the ToySoldi er玩具兵哦尔萨恩2040003 -Assis tan tCh eng助教尚2040004 -Rol y-Po ly1玩具工人12040005- R ol y-Poly 2玩具工人22040006 -R ol y-Po ly 3玩具工人32040007-R oly-Poly 4玩具工人42040008- Rol y-Po ly 5玩具工人52040009 -R oly-Poly6玩具工人62040010- Rol y-Pol y 7玩具工人72040011 - R oly-P oly8玩具工人82040012 - Roly-Poly 9玩具工人92040013 - Ro ly-Po ly10玩具工人102040014- Chi co奇可2040015 -Manag er Ka rl厂长卡胡2040016- Pi派2040017-G reen Mes orang er冒险勇者绿虎2040018 -Black Meso ran ge r冒险勇者熊猫2040019 -E ver to n埃巴2040020 - S arah吉乐肯2040021- Ta ra珮2040022 -R yd ole莱德里2040023 -L ostS ol dier迷路的士兵2040024- F ir st Eos Roc k第一个玩具塔石2040025- Se cond EosRock第二个玩具塔石2040026- Thi rd Eo s R oc k第三个玩具塔石2040027 -F our thE osR ock第四个玩具塔石2040028-Mark the ToySoldi er玩具兵马可2040029 - Gr andpa Cl oc k挂钟2040030 - W isp威舍2040031 -Docu mentRoll文件包2040032- We aver威巴2040033-Neru奈勒2040034 -R edSi gn警示2040035 -Artur o阿里特2040036 -Red B alloo n红色气球2040037 - Oran ge Ba llo on橙色气球2040038 -Yello w B al lo on黄色气球2040039 -L imeB al loon绿黄气球2040040- Gr ee nBall oon绿色气球2040041 -A qu a Ba lloo n海蓝气球2040042-S ky-B lueBallo on天蓝气球2040043- Blu e Bal loon蓝色气球2040044 - V iolet Ball oon紫色气球2040045 - Pi nk Ba llo on粉红气球2040046 -Rober t H ol ly哈尔里2040047 - Sgt. An de rs on士兵爱那得斯2040048- N ar a爱丽2040049 - G umbal l M ac hi ne糖果机器2040050 -E ure kth e Al chem ist流浪炼金术士2040051 -T oly小泰2040052- W izt heL ibra rian威兹2041000-Tian田安2041001 -R ose y俄林2041002- Hid和答2041003- Mir u米鲁2041004 -Mar ce l马勒萨里2041005 - Nemi乃米2041006- Mi sky米舍凯2041007-Miyu米约2041008 -S epp y舍琵2041009- Min i咪咪2041010- El lie爱丽2041011- Y el lo w Me sora nger冒险勇者黄雄2041012- Pin k Mes orang er冒险勇者粉狼2041013 -Gina吉纳2041014- Pat ricia帕特里沙2041015 -K orin克林2041016 -Ve ga弥勒吉尔2041017- Ace ofH ea rts库克斯2041018 -H anst he Ass embl er工程师汉斯2041019- Ro ckythe R epair man修理工镂刻2041020 -Mact heMe ch anic机械工麦戈2041021 -Mr.Bouf fon闵先生2041022 -Ti gu n th e Ad visor士官提甘2041023 -Flo炮娄2041024- T om bs tone造型物2041025 -Mac hi ne App arat us机械装置2041026-Ghos thun ter B ob幽灵猎人巴柏2041027 -Mason theCol le ct or搜集狂麦森2041028 -Unk no wn Thi ef飞侠转职教官2042000-Sp iege lman n休彼德蔓2042001-S pieg elma nn休彼德蔓2042002-Spie gelm ann休彼德蔓2042003- Ass ista nt Re d红队助手2042004 -Assi stant Blue蓝队助手2050000 -Dr. S an大山2050001 -D r. K im金博士2050002-A lien Gra y外星人哥雷2050003- Spa cen斯派斯尼2050004 -K ub o th e St orage man具宝2050005 -Chur y阿哲2050006 -H oo ny阿海2050007- Gun ny阿亮2050008 -Gener al Ma est ro马斯特将军2050009- Jr. Of fi ce r Me din参谋美得恩2050010-R icetheMedic卫生员莱斯2050011- Kev in th e Sol die r士兵克斌2050012 -Agent Ma rc o工作员M2050013- Por ter波特2050014 - Mete orite 1陨石12050015 -Meteo rit e2陨石22050016 -Meteo rit e3陨石32050017 -Meteo rit e4陨石42050018 -Meteo rit e5陨石52050019 -Meteo rit e6陨石62050020 -Drops hip载运船2051000- Dr. Pepp er珮珀2051001 -Kay卡伊2060000-N anuk e纳努科2060001- Ro bi ns on鲁宾逊2060002 - Ta e G on g太公2060003 - M elias艾里亚斯2060004 -Oanne s安纳斯2060005 -K enta坎特2060006 -Mu se妙斯2060007 -Calyp so卡利2060008 -Gerra rd杰拉德2060009 -Dolp hin海豚2060100-C arta卡勒塔2060101 -Tae ngt heE xplo rer探险队长坦克2060102 -Door to t he Wa rpe dDi mens ion次元空间入口2070000-M r.N oh鲁先生2070001- B un g's Ma ma芭德阿姨2070002 -Mo ki墨铁2070003 -Dori石铁2071000- Chu mji朴大爷2071001-Hong bu兴夫2071002- No lb u乐夫2071003 - C hilN am七南2071004 -KongJi小荳2071005 -C hilSung七诚2071006-Swal low燕子2071007- G ra nd maY eon莲婆婆2071008 -Ha en im小日2071009- Mr. Sh im沈师铭2071010 - G od of Mo un ta ins山神2071011 - Tr eeCu tt er樵夫2072000- Chi l S un g's Ri ce S tacks七诚家的稻穗2072001- Chi l Nam's Ri ceSt ac ks七南家的稻穗2073000- Pa rkC humJi2080000 -M os摩斯2080001 -Sly史莱2080002-M ax马克斯2080003 - No rma n诺蔓2080004- Moo die马蒂2080005 -Kosc u寇斯库2080006-Do lphi n海豚出租车2081000 -Ch ie f Ta tamo村长塔塔曼2081001-K umo库摩2081002 - It o依托2081003 - Y aku亚可2081004-P am潘姆2081005- Ker obe n可罗宾2081006 - Mo ira摩伊拉2081007- Rau l the Knig ht骑士拉乌尔2081008 - Ni ne Sp iri t'sBaby Dra gon九灵龙宝宝2081009- Mo ose姆斯2081010- M oo se姆斯2081100 -Harmo nia哈尔模尼亚2081200 - G ritto格里特2081300 - L egor列高罗2081400- Hel lin哈林2082000- M ue纽曼2082001 - To mmie塔咪2082002- Har ry哈利2083000-En cryp tedSlate oft heSq ua d敢死队的暗号石板2083001- H or nt ail's Sc hedul e暗黑龙王的里程碑2083002 -Cryst al of Ro ot s树根水晶2083003 - Stum p a tth e Ro om o f Maz e迷宫碎片2083004 -Mark of t he Sq uad远征队的标识2083005 -Fount aino fLife生命之泉2090000- Mr.Pa n老盼2090001 - Gong Go ng功功2090002 - Bi diwon防防2090003- Da lsuk达淑2090004-Mr.Do陈道人2090005- H ak鹤2090006- Lay a拉丫头2090100 -G rand pa Lu o老爹爹2090101 -L ilis hu丽秀秀2090102-N aran纳兰2090103 -Pat a巴塔2090104- Nom a诺马2091000- No Gon g诺功2091001 -D oGong道功2091002 -T aeSa ng太上2091003 -TaeS oo韩太守2091004 - Mast er Go bli n2092000 -Mr. K u邱老头2092001 -C apta in Hw ang黄船长2093000- MuTan武旦2093001-S o Wo n小防防2093002- La nMi ng兰明2093003- Mr. Go ng宫相公2093004 - D olphi n海豚2094000 - G uon久翁2094001-W u Ya ng无恙2094002- Gu on久翁2100 -Sera莎丽21000-Pa n潘2100000 -Ahmad阿赫马德2100001 -Muham ad莫哈莫德2100002- Zai d寨尔德2100003-Ja smin雅思敏2100004 -Sag aT萨哥特2100005 - S hati夏特2100006- Maz ra玛兹拉2100007-L ila拉尔拉2100008 -V ard八德乐2100009- Ald in阿尔丁2101- Hee na希娜2101000- Si ri n西琳2101001 - J iyoul e智由拉2101002 -Elesk a呃拉斯卡2101003 -Ardi n阿丁2101004 -T gu n提干2101005 - Byro n巴一岚2101006 -Le Pe titP rin ce小王子2101007 - A reda阿烈达2101008- Sc heger azade世赫拉2101009 - A bdull ah VI II阿得拉8世2101010 - Ja no扎诺2101011 -S ejan携詹2101012 -St ra ngeGuy可疑的男子2101013-Ka rcas a卡乐卡萨2102 -N ina妮娜2102000 - Ases son阿世顺2102001- Sly n斯林2102002 -S yr as西拉斯2103 -Maria玛丽亚2103000 - P alace Oasi s宫廷绿洲2103001 - Secr et wa ll秘密之墙2103002- Que en'scab in et王妃的装饰柜2103003 -A ria ntp riva te h ouse1阿里安特民宅12103004- Ar iantpriva teho us e2阿里安特民宅22103005- A ri an t pr ivat e hou se4阿里安特民宅42103006 - Aria nt pr iva teh ouse6阿里安特民宅62103007-Tr easu re B ox宝物箱2103008-M yste riou s voi ce奇妙的声音2103009- Ar iantpriva teho us e1C upbo ard阿里安特民宅1橱柜2103010- Ar iantpriva teho us e2C upbo ard阿里安特民宅2橱柜2103011- Ar iantpriva teho us e4C upbo ard阿里安特民宅4橱柜2103012- Ar iantpriva teho us e6C upbo ard阿里安特民宅6橱柜2110000- Ro sen罗森2110001-J erry哲里2110002 -K yol吉欧2110003 - Rama in拉玛人2110004 -Mere n威尔斯2110005-Ca melTaxi骆驼中巴2111000-Ca rson卡森2111001 -M aed麦麦德2111002- Delang德朗博2111003- Hu manoi d A人造人A2111004 - P hilia琵丽雅2111005- Ki ny琦尼2111006- Pa we n疯老头2111007 -Broke r H an.后街小贩2111008 - Bedi n.贝丁2111009 -Russe llon罗赛伦2111010- Al chede no'sCab in et.卡帕莱特的书页2111011- Wa ll墙2111012- Cab inet书页2111013- Pic tureframe镜框2111014- De sk桌子2111015-Ru ssel lon's Des k罗赛伦的桌子2111016- De Lang's Se cre tbo ok德朗博士秘密书2111017- 1stP ipehand le第一个拐杖2111018- 2nd Pip e han dle第二个拐杖2111019 - 3rd Pi pe ha ndl e第三个拐杖2111020 -1stM agi ca larra y.第一个魔法阵2111021-2n d Ma gica l arr ay第二个魔法阵2111022 - 3rd Ma gical ar ra y第三个魔法阵2111023 - Ma gic ala rray cen ter.魔法阵中央2111024 -S ecre t pas sege秘密通道2112000 - Y ulete犹泰2112001- Yul ete犹泰2112002- Y ul et e犹泰2112003 - Brit tan y朱丽叶2112004 - Br ady罗密欧2112005- Bri ttany朱丽叶2112006- Br ady罗密欧2112007 -In ve stig atio n Res ult.调查结果2112008 - B ritta ny朱丽叶2112009 -Brad y罗密欧2112010-Yu lete犹泰2112011 -Y ule te犹泰2112012 - Yu lete犹泰2112013- Inv estig ation Re su lt.调查结果22000 - Shan ks桑克斯9000000 - Paul珀尔9000001- Jea n江9000002 -P iet ro比特罗9000003 - V ikan贝坎9000004- Vik on贝根9000005-Vi kone贝肯9000006 -V iko on贝昆9000007 - Ch un Ji千吉9000008- Mr. Pic kall权达开9000009- Vi kin贝干9000010-P ietr a比特拉9000011- Ma rt in马丁9000012 -Harry亨利9000013- To ny透尼9000014-Ge anie基尼9000015 -T ami s塔密斯9000017 - Co co可可9000018 -M atil da9000019 -Ro ck, Pa per, Scis sorA dmi n9000020 -Spine l导游妮妮9010000 -Mapl e Adm inist rat or冒险岛运营员9010001- Tia可乐小姐9010002 - Mia9010003-Ri a9010004 - M ia9010005- Dia ne9010006 -S all y北极熊蒲企9010007 -Josh9010008 -P etti te9010009 -Du ey杜宜9010010 -Cassa ndr a卡珊德拉9010011 - O range Mu sh ro om花蘑菇9010012 - St arPi xi e星光精灵9010013 - He ngk i变种侏儒怪9010014 -Arami a阿乐米9020000 -Lakel is拉克里斯9020001- Clo to克鲁特9020002-N ella内拉9030000 -F red ri ck弗兰德里9030100- Scr oog e斯克鲁吉9040000 -Shuan g修安9040001 - N uris努里斯9040002- Sha wn杉峰9040003- Sh ar en III's S oul锡安列三世的灵魂9040004- Hon orabl e Roc k荣耀之石9040005 - Retu rning Ro ck回传之石9040006 -Guard St at ue人象之石9040007- Sha renI II'sW ill锡安列三世的遗书9040008- Gui ld R ank B oard公会排行布告栏9040009- Gat ekeep er城门守门人9040010 - Ti gerS tat ue飞虎石像9040011 -Bulle tinB oa rd留言板9040012 - Kn igh tAr mor骑士铠甲9050000 -Pig mit heS ummo ner9050001 -P ig mit he S ummon er9050002- Pig mi t he Su mmone r9050003- Pig mi th e Sum mon er9050004 - Pigm i the Su mm on er9050005 -Pigmi th eSu mmon er9050006 -P igm ith e Su mmon er9050007 -Pi gm i th e Su mmone r9050008-Pigm i an d Etr an9050009- Etr an's Info rmati onBo ar d9060000 - K enta肯塔9060001- Ken ta9100000 -Ke rn ingCity Mane kinek o9100001- Hen esysManek ine ko9100002 - Elli niaM ane ki ne ko9100003 -Perio n M an ek inek o9100004 - Sl eep yw oo d Ma neki neko9100100-Ga chap on9100101 -G ach ap on9100102 - Ga chapo n9100103- Gac hapon9100104-G acha pon9100105 -Gac ha po n9100106 - G achap on9100107- Ga chapo n9100108-Gach apon9100109- Ga ch ap on9100110 -Gacha pon119100111 - Gach apon129100200- Pac hinko 19100201- Pac hink o 29100202 -P ac hink o 39100203 -Pac hi nk o 49100204 - Pach ink o59100205- Pac hinko 69101000- No Stri ng9101001- Pet er9101002 -T odd9101003 - P eter9102000-Sc on9102001 -Garno x9103000- Pie tri9103001 -R ol ly9103002 -Rolly9103003 -Roll y9110000- P er ry9110001 - Ra imut heWa rr ior9110002 - Kino Ko no ko9110003 - Ja nken9110004 -T aru9110005 -Bro nz e9110006- Jin Jia9110007 -R obo9110008 -Per ry9110009 - Elli niaG a-c ha-p on快乐百宝箱9110010 -Hen es ys Ga-cha-pon快乐百宝箱9110011- Pe rion Ga-c ha-po n快乐百宝箱9110012- Ker ningCit yGa-cha-pon快乐百宝箱9110013-S leep ywoo d Ga-cha-p on快乐百宝箱9110014 - El Nath Ga-c ha-pon快乐百宝箱9110015- M us hr oomStat ue快乐百宝箱9110016- NoStri ng.高级快乐百宝箱9110100 -Char ity B ox9120000- Shi nta9120001 -Han ak o9120002- Dor an9120003- Hik ari9120004 -Mom oy o9120005- Umi9120006-S kai9120007 - Fura no9120008- Ts uri9120009 -Y us e9120010 - F aito9120011 -S akur a9120012- F ra id y Ca t9120013 - Bo ssKi tt y9120014 - P opo9120015- Ko npei9120016- Ma ri wa ka9120017 -PoniCha i9120018 -Grako9120019-M omoy o9120020 - Mi nst ei n9120021- Cla mshel l9120022- Man stein9120023-Y okoY oko9120024 -Uer ib a9120100- Tep ei9120101- Mid ori9120102 -Hik ek ur o9120103 - S aeko9120104 -N aoko9120200- Ko np ei9120201 - Ko npei9120202 -K onpe i9120203- K on pe i9200000 - C ody通常被修改为BO SS传送的NPC 9200001- Ma dBu nny目中无人兔兔9200100- D r.L enu9200101 - Dr.Rho me s9200102- Dr. Bosc h9201000- Moo ny9201001 -Na na(H)射手村n ana9201002 -H ig h Pr iest John9201003-M oma nd D ad9201004 -Am es the Wis e9201005- A ss is tant Nic ole9201006 -A ss ista nt D ebbie9201007-A ssis tant Nanc y9201008-Assi stan t Bon nie9201009- As sist ant J ackie9201010 -Assi stant Trav is9201011- Pe lvisBebop9201012 -Wayn e9201013- V ic to ria9201014 - Pila Pr es en t9201015 - J ulius St yl em an9201016 -Salon Se am us9201017 - Dr.Robe rts9201018 - D r. 902129201019- In tern Shak ihand s9201020- Viv ian B outiq ue9201021- Ro bin T he Hu ntr es s9201022- Tho masS wif t9201023 -Nana(K) 废气都市的娜娜,通常被修改为商店9201024- Na na(E)9201025 - N ana(O) 天空之城nana9201026- Nan a(L)9201027 -Nana(P) 勇士NA NA9201028 - Mala dy9201029- Gra ndma Bens on9201030- Map le C laws圣诞猫咪9201031 -H anna h9201032- M r.K itK at 幸福村厨师9201033-Si mon9201034 - Ben9201035 -J acob9201036- An ge li que9201037 - Gary an dSh atim a9201038 - Ri cha rdt heS ailo r9201039- C la ud ia9201040 -Mr.S pot9201041 - B ullse ye9201042- Mr. San dman9201043-Am ost he S trong9201044-A mostheStron g9201045-Amos the Stro ng9201046- Amo s th e Str ong9201047- Th e Gl immer Man9201048 -A mosthe S trong9201049 -Ames theWise9201050 -I ceby rd Sl imm9201051- Jo hn B arric ade9201052- Pr ofes sor F oxwit9201053 -Jack Masq ue9201054- Lit a La wless9201055-E lpam Gor lab9201056 -N LC Tax i9201057 - Be ll9201058- De lphi9201059-Ky le9201060 -Miki9201061 -B omac k9201062- J.J.9201063- Ari9201064-M ani9201065 - Mira nda9201066 - N LC Ma pleT V9201067- Cla w Mac hine9201068 -N LC t icket gate9201069 -V. 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WSS-10扩频微波产品说明书(8E1)
2.1 系统的组成 ..............................................................................................................Байду номын сангаас................... 5 2.2 设备接口 ...................................................................................................................................... 6 2.2.1 中频单元的前面板接口 ....................................................................................................... 6 2.2.2 中频单元的后面板接口 ....................................................................................................... 6 2.2.3 射频单元接口 ....................................................................................................................... 7 2.3 技术指标 ...................................................................................................................................... 7 2.3.1 2.4 G、5.8G 扩频通信产品 RF 单元技术指标 .................................................................. 7 2.3.2 WSS-10/8E1 中频单元技术指标 .......................................................................................... 8 第三章 使用说明................................................................................................................................. 9
TYP1012中文资料
TYP 212--->TYP 2012April 1995SCR FOR OVERVOLTAGE PROTECTIONSymbol ParameterValue Unit I T(RMS)RMS on-state current(180°conduction angle,single phase circuit)Tc =110°C 12A I T(AV)Average on-state current(180°conduction angle,single phase circuit)Tc =110°C 8A I TSMNon repetitive surge peak on-state current (Tj initial =25°C )tp =8.3ms 315Atp =10ms 300I 2t I 2t valuetp =10ms 450A 2s I TMNon repetitive surge peak on-state current (Tj initial =25°C )Exponential pulse wave formtp =1ms750A dI/dt Critical rate of rise of on-state currentGate supply :I G =100mA di G /dt =1A/µs 100A/µs Tstg Tj Storage and operating junction temperature range-40to +150-40to +125°C °C TlMaximum lead temperature for soldering during 10s at 4.5mm from case260°CTO220AB (Plastic)KA G.HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING.HIGH STABILITY AND RELIABILITYDESCRIPTIONSymbol ParameterTYPUnit21251210122012V DRM V RRM Repetitive peak off-state voltage Tj =125°C2550100200VABSOLUTE RATINGS (limiting values)FEATURESThe TYP 212--->1012Family uses high perform-ance glass passivated chips technology.These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits applica-tion.1/5GATE CHARACTERISTICS (maximum values)Symbol ParameterValue Unit Rth (j-a)Junction to ambient60°C/W Rth (j-c)DC Junction to case for DC1.3°C/WSymbol Test ConditionsValue Unit I GT V D =12V (DC)R L =33ΩTj=25°C MAX 30mA V GT V D =12V(DC)R L =33ΩTj=25°C MAX 1.5V V GD V D =V DRM R L =3.3k ΩTj=125°C MIN 0.2V tgt V D =V DRM I G =200mA dI G /dt =1.5A/µs Tj=25°C TYP 1µs I L I G =1.2I GT Tj=25°CTYP 60mA I H I T =500mAgate openTj=25°C MAX 50mA V TM ITM=50A tp=380µs Tj=25°C MAX 1.5V I DRM I RRM V DRM Rated V RRMRatedTj=25°C MAX0.01mATj=125°C 2dV/dt Linear slope up to V D =67%V DRM gate openTj=125°C MIN 200V/µs tqV D =67%V DRM I TM =50A V R =25V dI TM /dt=30A/µs dV D /dt=50V/µsTj=125°CTYP 100µs P G (AV)=1WP GM =10W (tp =20µs)I FGM =4A (tp =20µs)V RGM =5V.ELECTRICAL CHARACTERISTICSTHERMAL RESISTANCESTYP 212--->TYP 20122/5Fig.1:Maximum average power dissipation versus average on-state current.Fig.2:Correlation between maximum average power dissipation and maximum allowable temperatures (T amb and T case )for different thermal resistances heatsink +contact.Fig.5:Relative variation of gate trigger current versus junction temperature.Fig.6:Non repetitive surge peak on-state current versus number of cycles.Fig.3:Average on-state current versus casetemperature.1E-31E-21E-11E+01E+11E+25E+20.010.11Zth/Rth Zth(j-c)Zth(j-a)tp(s)Fig.4:Relative variation of thermal impedance versus pulse duration.TYP 212--->TYP 20123/5Fig.7:Non repetitive surge peak on-state current for asinusoidal pulse with width:t≤10ms,andcorresponding value of I2t.Fig.8:On-state characteristics(maximum values).Fig.9:Peak capacitor discharge current versus pulse width.Fig.10:Allowable peak capacitor discharge current versus initial junction temparature.TYP212--->TYP2012 4/5PACKAGE MECHANICAL DATA TO220AB PlasticCooling method :CMarking :type number Weight :2.3gRecommended torque value :0.8m.N.Maximum torque value :1m.N.AGJHDBCMLFOP=N =IREF.DIMENSIONSMillimeters Inches Min.Max.Min.Max.A 10.0010.400.3930.409B 15.2015.900.5980.625C 13.0014.000.5110.551D 6.20 6.600.2440.259F 3.50 4.200.1370.165G 2.65 2.950.1040.116H 4.40 4.600.1730.181I 3.75 3.850.1470.151J 1.23 1.320.0480.051L 0.490.700.0190.027M 2.40 2.720.0940.107N 4.80 5.400.1880.212O 1.14 1.700.0440.066P0.610.880.0240.034Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.©1995SGS-THOMSON Microelectronics -Printed in Italy -All rights reserved.SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia -Brazil -France -Germany -Hong Kong -Italy -Japan -Korea -Malaysia -Malta -Morocco -The Nether-lands Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.TYP 212--->TYP 20125/5。
CMWL系列贴片塑封电感器说明书
电感专业制造商 CMWL系列贴片塑封电感器
●EXTERNAL DIMENSIONS UNIT:mm(外形尺寸)
● PART NUMBERING SYSTEM(品名系统)
CMWL1210F 330K T
12345
1、SERIES NAME 品名 C代C.RD.,M指贴片系列,WL为塑封电感系列
2、DIMENSIONS 尺寸 外围*高度 F和D指产品材料代号
3、INDUCTANCE 电感值 前两位为有效数字,第三位表示零的个数
4、TOLERANCE CODE 公差 J:±5%,K:±10%,L:±15%,M:±20%,P:±25%,N:±30%
5、PACKING CODE 包装方式 T:Tape&Reel(卷装) B:In Bulk
● FEATURES(特性)
Various high power inductors are superior to be high saturation for surface mounting.
具有高功率、高饱和电流,低阻抗、小型化之特点
● APPLICATIONS(用途)
录影机、OA仪器、数码相机、液晶电视、笔记本电脑、小型通信机器、DC/DC变压器之电源供应等
************************************************************************************ Design As Customers Requested Specifications可根据客户需求设计
电感专业制造商 CMWL系列贴片塑封电感器。
神经网络控制
M—P模型的提出兴起了对神经网络的研究。
(2) 1949年心理学家D.O.Hebb提出神经元之间突触联系强度可变 的假设。他认为学习过程是在突触上发生的,突触的联系强度随其前 后神经元的活动而变化。根据这一假设提出的学习率为神经网络的学 习算法奠定了基础。
(3) 1958年,Rosenblatt提出感知机,第一次把神经网络的研究付 诸工程实践。这是一种学习和自组织的心理学模型,它基本上符合 神经生理学的知识,模型的学习环境是有噪声的,网络构造中存在 随机连接,这符合动物学习的自然环境。这种类型的机器显然有可 能应用于模式识别、联想记忆等方面。
3.兴盛阶段
再次兴起的原因:
(1)计算机不具备学习能力。在处理能明确定义的问题或运用能明 确定义的概念作为知识时,计算机比较容易对它们进行处理,但是对 一些知识背景不清楚、推理规则不明确、环境信息十分复杂的知识处 理或是算法难以提取的信息处理任务往往感到很困难。 (2)日本第五代机计划远未达到预想水平,也倾向使人觉得有必要 进一步弄清人们习以为常的认知功能是如何进行的.这些认知功能包 括视、听觉感知,学习记忆,运动控制等.从而使人们认识到不能拘 泥一格而必须开拓新的思路,探索新的人类智能实现途径。这时原来 已出现过的,与人脑的生理组织更为接近的神经网络模型就自然成为 理想的候选模型。
兴盛阶段的标志:
(1)近些年来.许多科学家提出了许多种具备不同信息处理能力的神 经网络模型,至今为止。约已开发出了三十多种。神经网络也 被应用到了许多信息处理领域,如模式别、自动控制、信号处理、辅助 决策、人工智能等等。 (2)神经计算机的研究也为神经网络的理论研究和应用研究促供了 强有力的支持,各大学、科研团体和公司开发了许多神经网络模拟软 件包、各种型号的电子神经计算机以及许多神经网络芯片。 (3)1987年6月在美国加州举行了第一届神经网络国际会议,并成立 了国际神经网络学会,以后每年召开两次国际联合神经网络大会 (IJCNN)。 1990年12月在北京召开了我国首届神经网络学术大会,在南 京召开的1991中国神经网络学术大会上成上了中国神经网络学会。当前 发行了两种专门介绍神经网络研究的刊物,《IEEE Transaction on Neural Network》和《Neural Network》
kw25n120中文资料
Preliminary
SKW25N120
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
td(on) tr td(off) tf Eon Eoff Ets
Anti-Parallel Diode Characteristic Diode reverse recovery time
Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during tF
trr tS tF Qrr Irrm dirr/dt
Tj=25°C, VCC=800V,IC=25A, VGE=15/0V, RG=22Ω, Energy losses include “tail” and diode reverse recovery.
Tj=25°C, VR=800V, IF=25A, diF/dt=650A/µs
- parallel switching capability
Type SKW25N120
VCE
IC
1200V 25A
Eoff 2.9mJ
Tj
Package
150°C TO-247AC
Maximum Ratings
Parameter
锐捷网络 SD-WAN Edge CPE SDW102 SDW102-L 快速入门指南说明书
Quick Start GuideSD-WAN Edge CPESDW102 | SDW102-LPackage Contents1. SDW102/SDW102-L SD-WAN Edge CPE2. (Optional) AC power adapter with international socket converters3. (Optional) 2 x LTE antennas4. 2 x SFP port covers5. Screw kit—2 screws and 2 plugs6. QR code cardOverview1. LTE antenna connectors (SDW102-L only)2. DC power input3. 2 x 1G Combo SFP/RJ-45 WAN Ports:⏹ Green LED: On/Blinking (RJ-45 l ink/traffic) ⏹ Orange LED: On/Blinking (SFP l ink/traffic)4. 4 x 1G RJ-45 LAN Ports: ⏹ Green LED: On/Blinking (link/traffic)⏹Orange LED: On (1G speed), Off (10/100M speed)5. Console port6. 2 x USB 3.0 ports7. Reset button:⏹ A quick press restarts the system.⏹Press and hold for 5 seconds resets to factory defaults.8. System LED Indicators:⏹ CELL (SDW102-L only): On (LTE ready)⏹ MGMT: On (controller managed), Blinking (controller sync) ⏹SYS: On (power OK)9. Kensington lock slot10. SIM card slot (SDW102-L only)Installation1. At t he i nstallation l ocation o n t he w all, s et t wo s crews i n t he w all160 mm (6.3 in.) apart. Use the wall plugs and screws included in the screw kit.Mount the D evicea. Mounting on a Wall 2. With its ports facing down, slide the device’s wall mounting slotsdown onto the screws so that the unit is secure.b. Mounting on a Flat SurfaceThe device canalso beplaced on any flat surface,such asa desktop orshelf.Note: Drill 2.5 mm (±0.2 mm) holes for M3 self-tapping screws, o r 4.5 m m (±0.2 m m) h oles f or n ylon w all p lugs.121910112 3 4 5 6 7826543Warning: For indoor use only. The device, AC poweradapter, and all connected cables are not for outdoor use. Avertissement: Pour une utilisation en intérieuruniquement. L’appareil, l’adaptateur secteur et tous les câbles connectés ne sont pas destinés à une utilisation en extérieur.Connect Power1. Connect t he A C p ower a dapter to t he D C p ower j ack on t he d eviceand then plug the adapter into a nearby AC power source.Check the SYS LED1. When operating normally, the SYS LED should be on green.Connect Network Cables1. For the 1000BASE-T RJ-45 ports, connect 100-ohm Category 5, 5 eor better twisted-pair cable.2.For the SFP slots, first install SFP transceivers and then connect fiberoptic cabling to the transceiver ports.The following transceivers are supported:⏹1000BASE-SX (ET4201-SX) ⏹ 1000BASE-LX (ET4201-LX) ⏹ 1000BASE-ZX (ET4201-ZX) ⏹1000BASE-LHX (ET4201-LHX)3. As connections are made, check the port status LEDs to be sure thelinks are valid.⏹On/Blinking Green — Port has a valid link. Blinking indicates network activity.Install LTE Antennas and SIM Card(SDW102-L only)1. Attach the two included LTE antennas to the connectors on thedevice.2. Install a 2FF mini-SIM card into the slot on the side of the device.Make Initial Configuration Changes1. Connect a PC to one of the SD-WAN Edge CPE’s LAN ports.2.Log in to the web interface using the default management IP address 192.168.100.1 (username “admin” with password “admin”). 3. Configure the Barrista controller IP address and port through one ofthe following methods.⏹ DHCP: Automatic configuration.⏹ Static: Manually set the IP address, subnet mask, default gateway, and DNS servers.⏹ PPPoE: Set the PPPoE username and password. ⏹Set the LTE SIM PIN, APN name (SDW102-L only)4.Click “Save” to confirm the configuration and enable the SD-WAN Edge CPE to communicate with the Barrista controller.2111Hardware Specifications Safety and Regulatory InformationChassisSize (WxDxH) 232.8 x 183.2 x 45.2 mm (9.17 x 7.21 x 1.78 in.) Weight SDW102: 696.6 g (1.54 lb)SDW102-L: 751.8 g (1.66 lb) Temperature Operating: 0 °C to 40 °C (32 °F to 104 °F)Storage: -20 °C to 70 °C (-4 °F to 158 °F) Humidity Operating: 10% to 90% (non-condensing)FCC Class BThis equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can r adiate radio f requency e nergy and, i f not installed and used i n accordance with the instructions, may cause harmful interference to radio communications. However, there i s no guarantee that interference will not occur in a particular installation. If this equipment does causeInterfacesNetwork WAN: 2 x 1G Combo SFP/RJ-45LAN: 4 x RJ-45 10/100/1000BASE-T USB 2 x USB 3.0Console RS-232 serial, RJ-45 portPowerAC Power Adapter AC Input: 100–240 VAC, 50-60 HzDC Output: 12 VDC, 3 A Power Consumption 36 Watts Maximum Regulatory Compliances harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try t o correct t he i nterference by one of the following measures:⏹Reorient or relocate the receiving antenna⏹Increase the s eparation between the e quipment and r eceiver⏹Connect the equipment into an outlet on a circuit different fromthat to which the receiver is connected⏹Consult the dealer or an experienced radio/TV technician forhelpFCC Caution: A ny changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate this equipment.This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmfulRadio (SDW102-L only)EN 301 908-1 V11.1.1 2016-07 (LTE)PLMN10 (LTE) interference, and (2) this device must accept any interference received,including interference that may cause undesired operation.Emissions CE MarkEN 55032, Class BEN 61000-3-2, Class BEN 61000-3-3FCC Class BCNS 1593647 CPR FCC Part 15:2016, Subpart B, Class BANSI C63.4:2014CISPR 32.2015 + COR1:2016, Class BAS/NZS CISPR 32:2015, Class BCanada Std. ICES-003:2022 Issue 7, Class BVCCI Class BImmunity EN 55024:2010+A1:2015EN 301489-1 v2.1.1 (SDW102-L only)EN 301489-52 v1.1.0 (LTE) (SDW102-L only)EN 301489-19 (GPS) (SDW102-L o nly)Safety UL 62368-1 &CAN/CSA C22.2 N o. 62368-1-14CB IEC/EN 60950-1 & IEC/EN 62368-1BSMI Safety Standard CNS15598-1 Taiwan RoHS CNS 15663 CE MarkCE Mark Declaration of Conformance for EMI and Safety (EEC) This information technology equipment complies with the requirements of the Council Directive 2014/30/EU on the Approximation of the laws of the Member States relating to Electromagnetic Compatibility and 2014/ 35/EU for electrical equipment used within certain voltage limits. For the evaluation of the compliance with these Directives, the following standards were applied:RFI Emission:⏹Limit according to EN 55032:2015/A1:2020, Class B⏹Limit for harmonic current emission according to EN 61000-3-2:2019/A1:2021, Class B⏹Limitation of voltage fluctuation and flicker in low-voltage supplysystem according to EN 61000-3-3:2013/A1:2019 Immunity:⏹Product family standard according to EN 55024:2010/A1:2015⏹Product family standard according to EN 55035:2017/A11A1:2020⏹Electrostatic Discharge according to IEC 61000-4-2:2008 ED. 2.0⏹Radio-frequency electromagnetic field according to IEC 61000-4-3:2020 ED. 4.0⏹Electrical fast transient/burst according to IEC 61000-4-4:2012 ED.3.0⏹Surge immunity test according to IEC 61000-4-5:2017 ED. 3.1 ⏹Immunity to conducted disturbances, Induced by radio-frequencyfields: IEC 61000-4-6:2013 ED. 4.0⏹Power frequency magnetic field immunity test according to IEC61000-4-8:2009 ED. 2.0⏹Voltage dips, short interruptions and voltage variations immunity testaccording to IEC 61000-4-11:2020 ED. 3.0警告使用者:為避免電磁干擾,本產品不應安裝或使用於住宅環境。
无线接入网
Wireless LAN(无线局域网)
Ad-Hoc模式
Wireless LAN(无线局域网)
基本服务集合BSS(Basic Service Set) BSS相当于一个蜂窝(Cell)。 BSS由一组执行相同MAC协议、争用同一共享媒 体的接入站点组成,并由一个BSS-ID来标识,通常 为网络中无线接入点AP(Access Point)的MAC地 址。 BSS内的移动主机都可以相互通信,也可通过接入 点AP接入有线网络与有线网络中的站点通信。 接入点AP通常由一个有线网络接口(如802.3)和 一个无线网络接口组成,无线网络接口将多个无线 站点汇聚到有线网络中。
Wireless LAN(无线局域网)
高速直接序列扩频HR-DSSS
(High Rate Direct Sequence Spread Spectrum) 1999年提出的802.11b,工作在ISM的2.4~2.4835G Hz频段,传输速率最高为11Mbps。 波特率为1M,如一波特携带1 bit,传输速率为1 M bps,携带2 bit,为2M bps,如采用调相调制, 则波特率将为1.375M,并携带4 bit和8 bit,传输速 率将为5.5M bps和11M bps。
802.1 :高层局域网协议Higher Layer LAN Protocols 802.2 :逻辑链路控制Logical Link Control 802.3 :以太网Ethernet 802.4 :令牌总线Token Bus 802.5 :令牌环Token Ring 802.11:无线局域网Wireless LAN 802.15:无线个域网Wireless Personal Area Network 802.16:宽带无线接入Broadband Wireless Access 802.17:弹性分组环Resilient Packet Ring 802.18:无线管制Radio Regulatory TAG 802.19:共存Coexistence TAG 802.20:移动宽带无线接入Mobile Broadband Wireless Access 802.21:媒质无关切换Media Independent Handoff
SI1012R中文资料
rDS(on) – On-Resistance (W) (Normalized)
1
0.80
0
0.0
0.2
0.4
0.6
0.8
Qg – Total Gate Charge (nC)
1000
Source-Drain Diode Forward Voltage TJ = 125_C
100 TJ = 25_C
4. Surface Mounted
10
100
600
4
Document Number: 71166 S-02464—Rev. A, 25-Oct-00
元器件交易网
New Product
Si1012R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-State Resistancea
VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 m A VGS = 1.8 V, ID = 350 m A VDS = 10 V, ID = 400 mA
IS = 150 mA, VGS = 0 V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
SOD-123型号的塑封稳压二极管商品说明书
SOD-123贴片塑封稳压二极管SOD-123 Plastic-Encapsulate Zener Diode特征Featuresz 齐纳击穿阻抗低; Low Zener Impedancez 最大功率耗散500mW; Power Dissipation of 500mW z 高稳定性和可靠性。
High Stability and High Reliability 机械数据Mechanical DataSOD-123z 封装: SOD-123封装SOD-123 Small Outline Plastic Package z 极性: 色环端为负极Polarity: Color band denotes cathode end z 环氧树脂UL 易燃等级Epoxy UL: 94V-0 z安装位置: 任意Mounting Position: Any极限值和温度特性(TA = 25℃ 除非另有规定)Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters符号Symbol 数值Value 单位Unit功率消耗Power DissipationPd 500 mW正向压降Forward Voltage @IF=10mA Vf 0.9 V存储温度Storage temperature rangeTs -65-+150℃ 1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm²2) Short duration test pulse used to minimize self-heating effect 3)f=1KHz电特性 (TA = 25℃ 除非另有规定)Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt IztZzt @Izt Zzk @IzkIzk IR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mA BZT52B2V4 2WX 2.4 2.35 2.45 5 100 600 1.050 1.0 -3.5 0 5 BZT52B2V7 2W1 2.7 2.65 2.75 5 100 600 1.020 1.0 -3.5 0 5 BZT52B3V0 2W2 3.0 2.94 3.06 5 95 600 1.010 1.0 -3.5 0 5 BZT52B3V3 2W3 3.3 3.23 3.37 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52B3V6 2W4 3.6 3.53 3.67 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52B3V9 2W5 3.9 3.82 3.98 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52B4V3 2W6 4.3 4.21 4.39 5 90 600 1.0 3 1.0 -3.5 05BZT52B4V7 2W7 4.7 4.61 4.79 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52B5V1 2W8 5.1 5.00 5.20 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52B5V6 2W9 5.6 5.49 5.71 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52B6V2 2WA 6.2 6.08 6.32 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52B6V8 2WB 6.8 6.66 6.94 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52B7V5 2WC 7.5 7.35 7.65 5 15 80 1.0 15.0 2.5 5.3 5BZT52B8V2 2WD 8.2 8.04 8.36 5 1580 1.00.7 5.0 3.2 6.2 5 BZT52B9V1 2WE 9.1 8.929.28 5 15 100 1.00.5 6.0 3.8 7.0 5 BZT52B10 2WF 10 9.80 10.20 5 20 150 1.00.2 7.0 4.5 8.0 5 BZT52B11 2WG 11 10.78 11.22 5 20 150 1.00.1 8.0 5.4 9.0 5 BZT52B12 2WH 12 11.76 12.24 5 25 150 1.00.1 8.0 6.0 10.0 5 BZT52B13 2WI 13 12.74 13.26 5 30 170 1.00.1 8.0 7.0 11.051) 2)Zener Voltage RangeMaximum Zener Impedance MaximumReverse CurrentVz@Izt Izt Zzt @Izt Zzk @IzkIzkIR VRTypicalTemperaturecoefficent @IZTC=mV/℃TestCurrentIZTC Device MarkingNom(V) Min(V) Max(V) mA Ω mAuA V Min Max mABZT52B15 2WJ 15 14.70 15.30 5 30 200 1.00.1 10.5 9.2 13.0 5 BZT52B16 2WK 16 15.68 16.32 5 40 200 1.00.1 11.2 10.4 14.0 5 BZT52B18 2WL 18 17.64 18.36 5 45 225 1.00.1 12.6 12.4 16.0 5 BZT52B20 2WM 20 19.60 20.40 5 55 225 1.00.1 14.0 14.4 18.0 5 BZT52B22 2WN 22 21.56 22.44 5 55 250 1.00.1 15.4 16.4 20.0 5 BZT52B24 2WO 24 23.52 24.48 5 70 250 1.00.1 16.8 18.4 22.0 5 BZT52B27 2WP 27 26.46 27.54 2 80 300 0.50.1 18.9 21.4 25.3 2 BZT52B30 2WQ 30 29.40 30.60 2 80 300 0.50.1 21.0 24.4 29.4 2 BZT52B33 2WR 33 32.34 33.66 2 80 325 0.50.1 23.1 27.4 33.4 2 BZT52B36 2WS 36 35.28 36.72 2 90 350 0.50.1 25.2 30.4 37.4 2 BZT52B39 2WT 39 38.22 39.78 2 130 350 0.50.1 27.3 33.4 41.2 2 BZT52B43 2WU 43 41.16 43.84 2 100 700 1.00.1 32.0 10.0 12.0 5 BZT52B47 2WV 47 46.06 47.94 2 100 750 1.00.1 35.0 10.0 12.0 5 BZT52B51 2WW 51 49.98 52.02 2 100 750 1.00.1 38.0 10.0 12.05Breakdown characteristicsat Tj=constant (pulsed)Forward characteristicsAdmissible power dissipation versus ambient temperaturePulse thermal resistance versus pulse durationDynamic resistance versus Zener currentCapacitance versus Zener voltageDynamic resistance versus Zener current Dynamic resistance versus Zener current Thermal differential resistance versus Zener voltageDynamic resistance versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageTemperature dependence of Zener voltage versus Zener voltageChange of Zener voltage versus junction temperatureChange of Zener voltage versus junction temperatureChange of Zener voltge from turn-on up to the point of thermalequilibrium versus Zener voltageSOD-123 PACKAGE OUTLINE Plastic surface mounted package焊盘设计参考Precautions: PCB DesignRecommended land dimensions for SOD-123 diode. Electrode patterns for PCBs中心距: 3.24 脚宽: 0.55 焊盘宽: 1.00 脚长: 0.50 焊盘长: 0.80 技术要求:1, 塑封体尺寸: 2.70 X 1.60 2: 未注公差为: ±0.053, 所有单位: mm。
整流桥2W10
2W005 – 2W102.0A SINGLE-PHASE BRIDGE RECTIFIERRecognized Mechanical DataCase: RB-20, Molded Plastic Terminals: Plated Leads Solderable per Maximum Ratings and Electrical Characteristics @T A =25°C unless otherwise specifiedSingle Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.CharacteristicSymbol 2W0052W012W022W042W062W082W10UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWM V R 501002004006008001000V RMS Reverse VoltageV R(RMS)3570140280420560700V Average Rectified Output Current @T A = 50°C (Note 1)I O2.0ANon-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)I FSM 60A Forward Voltage (per element) @I F = 2.0A V FM 1.0V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM 5.0500µA Operating Temperature Range T j -55 to +125°C Storage Temperature RangeT STG-55 to +150°CNote: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.WTE0.010.11.0100.20.6 1.0 1.4I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V ,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.2Typical Forward Characteristics , per elementF 01020304050110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60Hz Fig.3Max Non-Repetitive Surge Current60110100110100C ,J U N C T I O N C A P A C I T A N C E (p F )j V ,REVERSE VOLTAGE (V)Fig.4Typical Junction CapacitanceR 0.010.11.01010020004080160I ,I N S T A N T A N E O U S R E V E R S E C U R R E N T ( A )R PERCENT OF RATED PEAK REVERSE VOLTAGE (%)Fig.5Typical Reverse Characteristics12000.51.01.5255010012515075I ,A V E R A G E F O R W A R D C U R R E N T (A )F T ,AMBIENT TEMPERATURE ( C)Fig.1Forward Current Derating CurveA 2.0MARKING INFORMATION2WxxORDERING INFORMATIONProduct No.Package TypeShipping Quantity2W005Round Bridge 1000 Units/Box 2W01Round Bridge 1000 Units/Box 2W02Round Bridge 1000 Units/Box 2W04Round Bridge 1000 Units/Box 2W06Round Bridge 1000 Units/Box 2W08Round Bridge 1000 Units/Box 2W10Round Bridge1000 Units/Box1. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.2.To order Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, 2W005-LF.Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.We power your everyday.Won-Top Electronics Co., Ltd.No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417Email: sales@Internet: 。
三相SPWM波形发生器专用电路SM2001说明书
地址: 深圳市高新技术产业园南区高新南一道国微大厦电话Tel:*************传真Fax:*************电子邮件Email:***************三相SPWM波形发生器专用电路SM2001━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━特点全数字化设计,全数字化电路。
内部带两套波形发生器,可产生标准正弦波和用于交流电机的控制高效准正弦波。
自动产生三相PWM调制波形,范围从0到200Hz(时钟为20MHz时),步进频率为最大频率的1/255。
采用双边沿规则采样产生PWM调制波形。
载波频率可多级选择,最高可达到38KHz。
可选择死区时间和窄脉冲时间,范围从0.05uS~25.6uS。
采用高速三线同步串行接口,通讯速度可达到1 MHz。
通过MCU进行参数化控制,需要占用MCU的资源极小。
驱动电流达20mA,可直接驱动光耦。
采用外部时钟驱动,可与单片机共用一个晶体谐振器,最高工作频率可达24MHz。
有完善的多级保护电路,保护动作灵敏(典型反应时间小于2个时钟周期)。
PWM波形调整快,在一个PWM周期内即可完成变换。
三相输出的电平为负脉冲有效,无波形输出时保持高电平。
概述SM2001是可产生三相正弦PWM驱动波形的大规模集成电路芯片,它的工作频率宽,正弦谐波失真小,参数调节方便、准确,保护电路完善,且有普通正弦波和高效电机驱动波两种波形的选择,可广泛用于交流异步电机的变频驱动(AC MOTOR),如变频空调、变频冰箱和变频洗衣机的控制驱动。
各类工业水泵、风机的变频驱动,各类不间断逆变电源(UPS)以及其它一些需要三相SPWM波形驱动的功率控制电路中。
它有六个SPWM输出端口,分别驱动U、V、W三个桥式结构的功率电路,每相信号由两路与TTL电平兼容的管脚输出。
该信号通常是通过外部的隔离器件(如光耦)来驱动桥式电路的。
两个管脚分别驱动某个相的桥的上半桥臂和下半桥臂。
Mellanox SX1012 ToR 交换机产品介绍说明书
–– IPv6 Ready –– IPv6 IPsec KEY FEATURES –– High Density
• 12 40/56GbE ports in 1RU • Up to 48 10GbE ports –– Lowest Latency • 220nsec for 40GbE • 270nsec for 10GbE –– Lowest Power • Maximum power consumption: <100 Watts
©2015 Mellanox Technologies. All rights reserved.
SX1012 12-Port 40/56GbE, 48-Port 10GbE, High Performance and SDN in Small Scale
FEATURES
LAYER 2 FEATURE SET – 1GbE, 10GbE, 40GbE, 56GbE – 48K L2 Forwarding Entries – Static MAC – Jumbo Frames (9216 BYTES) – VLAN 802.1Q (4K) – 802.1W Rapid Spanning Tree Protocol
End-to-End Mellanox is a leading supplier of end-to-end connectivity solutions. The SX1012, together with Mellanox cables and adapters, brings the networking industry’s first end-to-end 40/56GbE.
NI PXI PXIe-2532B 512-Crosspoint Matrix设备规格说明书
DEVICE SPECIFICATIONSNI PXI/PXIe-2532B512-Crosspoint MatrixThis document lists specifications for the NI PXI/PXIe-2532B (NI 2532B) 512-crosspoint matrix. All specifications are subject to change without notice. Visit /manuals for the most current specifications.Topology1-wire 4 x 128 matrix, 1-wire 8 x 64 matrix, ............................................................................1-wire 16 x 32 matrix,1-wire dual 4 x 64 matrix,1-wire dual 8 x 32 matrix,1-wire dual 16 x 16 matrix,1-wire quad 4 x 32 matrix,1-wire sixteen 2 x 16 matrix,2-wire 4 x 64 matrix, 2-wire 8 x 32 matrix,2-wire 16 x 16 matrix,2-wire dual 4 x 32 matrixRelated InformationRefer to the NI Switches Help for detailed topology information.ContentsAbout These Specifications (2)Input Characteristics (2)Dynamic Characteristics (4)Trigger Characteristics (5)Physical Characteristics (5)Environment (6)Shock and Vibration (6)Diagrams (6)Accessories (9)Reed Relay Life (10)Solution (11)Compliance and Certifications (12)Safety (12)Electromagnetic Compatibility (12)CE Compliance (12)Online Product Certification (13)Environmental Management (13)About These SpecificationsSpecifications characterize the warranted performance of the instrument under the stated operating conditions.Typical Specifications are specifications met by the majority of the instrument under the stated operating conditions and are tested at 23 °C ambient temperature. Typical specifications are not warranted.All voltages are specified in DC, AC pk, or a combination unless otherwise specified.Clean devices and terminal blocks by brushing off light dust with a soft, nonmetallic brush. Remove other contaminants with a soft, lint-free, dampened cloth. Do not use detergent or chemical solvents. The unit must be completely dry and free from contaminants before returning to service.Caution Refer to the Read Me First: Safety and Electromagnetic Compatibilitydocument for important safety and electromagnetic compatibility information. Toobtain a copy of this document online, visit /manuals, and search for thedocument title.Caution The protection provided by the NI 2532B can be impaired if it is used ina manner not described in this document.Input CharacteristicsMaximum switching voltageChannel-to-channel100 V........................................................................................................................................Channel-to-ground100 V, CAT ICaution This module is rated for Measurement Category I and intended to carrysignal voltages no greater than 100 V. This module can withstand up to 500 Vimpulse voltage. Do not use this module for connection to signals or for2 | NI PXI/PXIe-2532B Specifications | measurements within Categories II, III, or IV. Do not connect to MAINs supplycircuits (for example, wall outlets) of 115 or 230 VAC.Caution When hazardous voltages (>42.4 V/ 60 VDC) are present on any relayterminal, safety low-voltage (<42.4 V pk/60 VDC) cannot be connected to any otherrelay terminal. ............................................................................Maximum current0.5 A (switching or carry, per channel) Caution The maximum switching power is limited by the maximum switchingcurrent and the maximum voltage, and must not exceed 10 W. ............................................................................Maximum switching power10 W (per channel)DC path resistanceInitial<1 Ω....................................................................End-of-life≥2 Ω....................................................................Open channel>1 × 109 Ω....................................................................Note DC path resistance typically remains low for the life of the relay. At the endof relay life, the path resistance rapidly rises above 2 Ω. Load ratings apply to relaysused within the specification before the end of relay life.Thermal EMF....................................................................1-wire<50 μV2-wire<20 μV....................................................................Bandwidth, typical (-3 dB, 50 Ω termination)1-wire row/column≥30 MHz....................................................................2-wire row/column≥25 MHz....................................................................Crosstalk, typical (50 Ω termination) Channel-to-channel10 kHz<-85 dB....................................................................100 kHz<-65 dB....................................................................1 MHz<-45 dB....................................................................Isolation, typical (50 Ω termination) Openchannel10 kHz>84 dB....................................................................100 kHz>64 dB....................................................................1 MHz>44 dB....................................................................Related InformationElectromagnetic Compatibility on page 12NI PXI/PXIe-2532B Specifications | © National Instruments | 3Dynamic CharacteristicsSimultaneous drive limitPXI40 relays....................................................................PXI Express64 relays.................................................................... ............................................................................Relay operate time0.25 msNote Certain applications may require additional time for proper settling.............................................................................Release time0.25 msTypical relay life (no load)Mechanical 1 × 109 cycles....................................................................Electrical (resistive, <10 pF load)............................................................10 V, 100 mA 1 × 107 cycles20 V, 500 mA 5 × 106 cycles............................................................100 V, 10 mA 5 × 105 cycles............................................................Note Optional series protection resistance, available for the terminal blocks,increases the expected relay life at higher voltages. This series protection resistanceshields the reed relays from the effects of cable and load capacitance. For moreinformation, refer to the Reed Relay Protection tutorial at /zone.Note Reed relays are highly susceptible to damage caused by switching capacitiveand inductive loads. Capacitive loads can cause high inrush currents while inductiveloads can cause high flyback voltages. The addition of appropriate resistiveprotection can greatly improve contact lifetime. For more information about addingprotection circuitry to a capacitive load, visit /info and enter the Info Coderelaylifetime. For information about inductive loads, enter the Info Coderelayflyback.Note The relays used in the NI 2532B are field replaceable.Related InformationRefer to the NI Switches Help for information about including additional settling time, and replacing a failed relay.Reed Relay Life on page 104 | NI PXI/PXIe-2532B Specifications | Trigger CharacteristicsInput triggerSources PXI trigger lines 0 –7....................................................................Minimum pulse width150 ns....................................................................Note The NI 2532B can recognize trigger pulse widths less than 150 ns if youdisable digital filtering.Output trigger....................................................................Destinations PXI trigger lines 0–7Pulse width Programmable (1 µs to 62 µs)....................................................................Related InformationRefer to the NI Switches Help for information about disabling digital filtering. Physical CharacteristicsRelay type Reed ............................................................................Note NI advises against installing reed relay modules directly adjacent to anembedded controller with a magnetic hard drive because of the sensitivity of reedrelays and the possibility of interference. ............................................................................Relay contact material RhodiumI/O connectors2, 150 pos, Samtec ERM8-EM series ............................................................................Note Terminal block connectivity is with standard 0.050 inch pitch headers.Power requirementPXI............................................................5 V10 W3.3 V 2 W............................................................NI PXI/PXIe-2532B Specifications | © National Instruments | 5PXI Express12 V15 W............................................................3.3 V 2 W............................................................Dimensions (L × W × H)3U, one slot, PXI/cPCI module, PXI Express ............................................................................compatible 18.5 × 2.0 × 13.0 cm (7.3 × 0.8 ×5.1 in.)Weight454 g (1 lb) ............................................................................Related InformationAccessories on page 9EnvironmentOperating temperature0 °C to 55 °C ............................................................................Storage temperature-20 °C to 70 °C ............................................................................Relative humidity5% to 85%, noncondensing ............................................................................Pollution Degree2 ............................................................................Maximum altitude2,000 m ............................................................................Indoor use only.Shock and VibrationOperational Shock30 g peak, half-sine, 11 ms pulse (Tested in ............................................................................accordance with IEC 60068-2-27. Test profiledeveloped in accordance with MIL-PRF-28800F.)Random Vibration....................................................................Operating 5 to 500 Hz, 0.3 g rmsNonoperating 5 to 500 Hz, 2.4 g rms (Tested in accordance ....................................................................with IEC 60068-2-64. Nonoperating testprofile exceeds the requirements of MIL-PRF-28800F, Class 3.) DiagramsThe following figure shows the hardware diagram of the NI 2532B.6 | NI PXI/PXIe-2532B Specifications | B0R0 B0R1B0C1B0C15 B0C0B0C2B0C3B1R0 B1R1B1C1B1C15 B1C0B1C2B1C3B15R0B15R1Note All NI 2532B relays are open when the device is powered on.The following figure shows the NI 2532B connector pinout for the left and right connectors.NI PXI/PXIe-2532B Specifications | © National Instruments | 7RESERVEDRESERVED RESERVED Left Connector Right ConnectorHigh VoltageRelated InformationFor topology-specific connection information, refer to your device in the NI Switches Help and the installation instructions for any associated accessories or terminal blocks.8 | NI PXI/PXIe-2532B Specifications | AccessoriesVisit for more information about the following accessories.Note The specifications listed in this document, including the safety andcompliance certifications, also apply to the terminal blocks for the NI 2532B unlessotherwise noted in the terminal block installation instructions.Table 1. NI Accessories for the NI 2532BNote Refer to the terminal block installation instructions for signal connectivityoptions. Contact NI for custom terminal block designs.Caution You must install mating connectors according to local safety codes andstandards and according to the specifications provided by the connectormanufacturer. You are responsible for verifying safety compliance of third-partyNI PXI/PXIe-2532B Specifications | © National Instruments | 9connectors and their usage according to the relevant standard(s), including UL andCSA in North America and IEC and VDE in Europe.Table 2. Third-Party Accessory for the NI 2532BNote Third-party vendors offer mass-interconnect solutions for this module. Referto Virginia Panel at or MAC Panel at forconnectivity offerings.Related InformationRefer to the NI Switches Help for matrix expansion options.Reed Relay LifeThe following figure shows the reed relay lifetime nomograph. The purpose of this graph is to estimate reed relay lifetime.Note This nomograph is not meant to be an exact or guaranteed specification andshould only be used as a guideline to estimate lifetime. Actual reed relay lifetimesmay vary depending on application.Complete the following steps to use this nomograph:1.Determine the peak voltage experienced across the relay while switching and mark thisvalue on the Volts line.2.Determine the sum of the DUT, cable, and instrumentation capacitances and mark thisvalue on the Load Capacitance line.3.Draw a straight line between both values.The intersection points of this line and the No Protection and 100 W Protection axes are the corresponding estimated relay lifetimes in cycles. For more information on adding protection resistance, visit /info and enter the Info Code relaylifetime. Refer to the following example and figure for an example application.The reed relay module is connected to a DMM via 1 meter ofcable. The DMM and cable capacitances are 100 pF and 30 pFrespectively. The maximum voltage switched across the relay is50 V. Determine the estimated number of relay cycles with andwithout protection resistance.1PCB mount, additional cover or enclosure required. Refer to previous safety caution.10 | NI PXI/PXIe-2532B Specifications | SolutionThe total load capacitance is the sum of the cable and DMM capacitance, which is 130 pF.Draw a line between the 50 V point on the Volts axis and 130 pF on the Load Capacitance axis.The line drawn intersects the Cycles axes at approximately 500,000 on the No Protection axis and about 25,000,000 on the 100 Ω Protection axis (refer to Figure 3). This series resistance should be placed as close as possible to the relay for maximum effect.Figure 3. Reed Relay Lifetime Nomograph 1E 41E 51E 61E 71E 81E 935102030405060801001251501E 91E 81E 71E 61E 5101001000LoadCapacitance (pF)CyclesVolts8006004002002030406080300No Protection 100 ΩProtection NI PXI/PXIe-2532B Specifications | © National Instruments | 11Compliance and CertificationsSafetyThis product is designed to meet the requirements of the following electrical equipment safety standards for measurement, control, and laboratory use:•IEC 61010-1, EN 61010-1•UL 61010-1, CSA 61010-1Note For UL and other safety certifications, refer to the product label or the OnlineProduct Certification section.Electromagnetic CompatibilityThis product meets the requirements of the following EMC standards for electrical equipment for measurement, control, and laboratory use:•EN 61326-1 (IEC 61326-1): Class A emissions; Basic immunity•EN 55011 (CISPR 11): Group 1, Class A emissions•EN 55022 (CISPR 22): Class A emissions•EN 55024 (CISPR 24): Immunity•AS/NZS CISPR 11: Group 1, Class A emissions•AS/NZS CISPR 22: Class A emissions•FCC 47 CFR Part 15B: Class A emissions•ICES-001: Class A emissionsNote In the United States (per FCC 47 CFR), Class A equipment is intended foruse in commercial, light-industrial, and heavy-industrial locations. In Europe,Canada, Australia, and New Zealand (per CISPR 11), Class A equipment is intendedfor use only in heavy-industrial locations.Note Group 1 equipment (per CISPR 11) is any industrial, scientific, or medicalequipment that does not intentionally generate radio frequency energy for thetreatment of material or inspection/analysis purposes.Note For EMC declarations and certifications, refer to the Online ProductCertification section.CE ComplianceThis product meets the essential requirements of applicable European Directives, as follows:•2006/95/EC; Low-Voltage Directive (safety)•2004/108/EC; Electromagnetic Compatibility Directive (EMC)12 | NI PXI/PXIe-2532B Specifications | Online Product CertificationTo obtain product certifications and the DoC for this product, visit /certification, search by model number or product line, and click the appropriate link in the Certification column. Environmental ManagementNI is committed to designing and manufacturing products in an environmentally responsible manner. NI recognizes that eliminating certain hazardous substances from our products is beneficial not only to the environment but also to NI customers.For additional environmental information, refer to the Minimize Our Environmental Impact web page at /environment. This page contains the environmental regulations and directives with which NI complies, as well as other environmental information not included in this document.Waste Electrical and Electronic Equipment (WEEE)EU Customers At the end of the product life cycle, all products must be sent to aWEEE recycling center. For more information about WEEE recycling centers,National Instruments WEEE initiatives, and compliance withWEEE Directive 2002/96/EC on Waste Electrical and Electronic Equipment, visit/environment/weee.htm.电子信息产品污染控制管理办法(中国RoHS)中国客户National Instruments符合中国电子信息产品中限制使用某些有害物质指令(RoHS)。
英飞凌 FP10R12W1T7 EasyPIM 模块 数据表
Preliminary datasheetEasyPIM ™ 模块 采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管带有温度检测NTC 特性•电气特性-沟槽栅IGBT7-过载操作达175°C -低 V CEsat •机械特性-焊接技术-紧凑型设计-高功率密度-低热阻的三氧化二铝 Al 2O 3 衬底-2.5 kV 交流 1分钟 绝缘可选应用•空调•辅助逆变器•电机传动产品认证•根据 IEC 60747、60749 和 60068 标准的相关测试,符合工业应用的要求。
描述FP10R12W1T7EasyPIM ™ 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4二极管,整流器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5IGBT, 制动-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6二极管,制动-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 10封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 11模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .191封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器11.5mm 爬电距离d Creep端子至端子 6.3mm 电气间隙d Clear端子至散热器10.0mm 电气间隙d Clear端子至端子 5.0mm 相对电痕指数CTI > 200相对温度指数 (电)RTI住房140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE30nH 模块引线电阻,端子-芯片R AA'+CC'T H=25°C, 每个开关6mΩ模块引线电阻,端子-芯片R CC'+EE'T H=25°C, 每个开关8mΩ储存温度T stg-40125°C Mounting force per clamp F2050N 重量G24g注:The current under continuous operation is limited to 30A rms per connector pin.2IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极-发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 100 °C10A 集电极重复峰值电流I CRM t P = 1 ms20A 栅极-发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极-发射极饱和电压V CE sat I C = 10 A, V GE = 15 V T vj = 25 °C 1.60TBD VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.22 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.157µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 1.89nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.0066nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.0045mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 10 A, V CE = 600 V,V GE = ±15 V, R Gon = 8.2 ΩT vj = 25 °C0.023µs T vj = 125 °C0.025T vj = 175 °C0.026上升时间(感性负载)t r I C = 10 A, V CE = 600 V,V GE = ±15 V, R Gon = 8.2 ΩT vj = 25 °C0.014µs T vj = 125 °C0.017T vj = 175 °C0.019关断延迟时间(感性负载)t doff I C = 10 A, V CE = 600 V,V GE = ±15 V, R Goff = 8.2 ΩT vj = 25 °C0.124µs T vj = 125 °C0.157T vj = 175 °C0.176下降时间(感性负载)t f I C = 10 A, V CE = 600 V,V GE = ±15 V, R Goff = 8.2 ΩT vj = 25 °C0.227µs T vj = 125 °C0.347T vj = 175 °C0.422开通损耗能量 (每脉冲)E on I C = 10 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 8.2 Ω, di/dt = 550A/µs (T vj = 175 °C)T vj = 25 °C0.73mJ T vj = 125 °C0.94T vj = 175 °C 1.13关断损耗能量 (每脉冲)E off I C = 10 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 8.2 Ω, dv/dt =2700 V/µs (T vj = 175 °C)T vj = 25 °C0.623mJ T vj = 125 °C0.97T vj = 175 °C 1.17表 4特征值 (continued)特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj = 150 °C32At P≤ 7 µs,T vj = 175 °C30结-散热器热阻R thJH每个 IGBT 2.05K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F10A 正向重复峰值电流I FRM t P = 1 ms20A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C27.5A²sT vj = 175 °C24表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 10 A, V GE = 0 V T vj = 25 °C 1.72TBD VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM I F = 10 A, V R = 600 V,V GE = -15 V, -di F/dt = 550A/µs (T vj = 175 °C)T vj = 25 °C10.5A T vj = 125 °C15.3T vj = 175 °C17.5恢复电荷Q r I F = 10 A, V R = 600 V,V GE = -15 V, -di F/dt = 550A/µs (T vj = 175 °C)T vj = 25 °C0.97µC T vj = 125 °C 1.7T vj = 175 °C 2.2表 6特征值 (continued)特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗(每脉冲)E rec I F = 10 A, V R = 600 V,V GE = -15 V, -di F/dt = 550A/µs (T vj = 175 °C)T vj = 25 °C0.24mJ T vj = 125 °C0.51T vj = 175 °C0.72结-散热器热阻R thJH每个二极管 2.45K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4二极管,整流器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1600V 最大正向均方根电流(每芯片)I FRMSM T H = 100 °C25A 最大整流器输出均方根电流I RMSM T H = 100 °C25A 正向浪涌电流I FSM t P = 10 ms T vj = 25 °C300AT vj = 150 °C245I2t-值I2t t P = 10 ms T vj = 25 °C450A²sT vj = 150 °C300表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 10 A T vj = 150 °C0.80V 反向电流I r T vj = 150 °C, V R = 1600 V1mA 结-散热器热阻R thJH每个二极管 1.54K/W 允许开关的温度范围T vj, op-40150°C5IGBT, 制动-斩波器表 9最大标定值特征参数代号标注或测试条件数值单位集电极-发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 100 °C10A 集电极重复峰值电流I CRM t P = 1 ms20A 栅极-发射极峰值电压V GES±20V表 10特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极-发射极饱和电压V CE sat I C = 10 A, V GE = 15 V T vj = 25 °C 1.60TBD VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.22 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.157µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 1.89nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.0066nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.0045mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 10 A, V CE = 600 V,V GE = ±15 V, R Gon = 8.2 ΩT vj = 25 °C0.023µs T vj = 125 °C0.025T vj = 175 °C0.026上升时间(感性负载)t r I C = 10 A, V CE = 600 V,V GE = ±15 V, R Gon = 8.2 ΩT vj = 25 °C0.014µs T vj = 125 °C0.017T vj = 175 °C0.019关断延迟时间(感性负载)t doff I C = 10 A, V CE = 600 V,V GE = ±15 V, R Goff = 8.2 ΩT vj = 25 °C0.124µs T vj = 125 °C0.157T vj = 175 °C0.176下降时间(感性负载)t f I C = 10 A, V CE = 600 V,V GE = ±15 V, R Goff = 8.2 ΩT vj = 25 °C0.227µs T vj = 125 °C0.347T vj = 175 °C0.422表 10特征值 (continued)特征参数代号标注或测试条件数值单位最小值典型值最大值开通损耗能量 (每脉冲)E on I C = 10 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 8.2 Ω, di/dt = 550A/µs (T vj = 175 °C)T vj = 25 °C0.73mJ T vj = 125 °C0.94T vj = 175 °C 1.13关断损耗能量 (每脉冲)E off I C = 10 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 8.2 Ω, dv/dt =2700 V/µs (T vj = 175 °C)T vj = 25 °C0.623mJ T vj = 125 °C0.97T vj = 175 °C 1.17短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj = 150 °C32At P≤ 7 µs,T vj = 175 °C30结-散热器热阻R thJH每个 IGBT 2.05K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.6二极管,制动-斩波器表 11最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F10A 正向重复峰值电流I FRM t P = 1 ms20A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C27.5A²sT vj = 175 °C24表 12特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 10 A, V GE = 0 V T vj = 25 °C 1.72TBD VT vj = 125 °C 1.59T vj = 175 °C 1.52表 12特征值 (continued)特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复峰值电流I RM I F = 10 A, V R = 600 V,-di F/dt = 550 A/µs(T vj = 175 °C)T vj = 25 °C10.5A T vj = 125 °C15.3T vj = 175 °C17.5恢复电荷Q r I F = 10 A, V R = 600 V,-di F/dt = 550 A/µs(T vj = 175 °C)T vj = 25 °C0.97µC T vj = 125 °C 1.7T vj = 175 °C 2.2反向恢复损耗(每脉冲)E rec I F = 10 A, V R = 600 V,-di F/dt = 550 A/µs(T vj = 175 °C)T vj = 25 °C0.24mJ T vj = 125 °C0.51T vj = 175 °C0.72结-散热器热阻R thJH每个二极管 2.45K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.7负温度系数热敏电阻表 13特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7 负温度系数热敏电阻9电路拓扑图图 210封装尺寸图 311 模块标签代码11模块标签代码图 4商标所有参照产品或服务名称和商标均为其各自所有者的财产。
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3.3.1 检查计算机设置 ................................ 5 3.3.2 设置TCP/IP ...................................... 5 4 设置准备 ........................................... 7 4.1 出厂默认值 ......................................... 7 4.2 设置前准备 ......................................... 7 4.3 登录 ............................................... 7 5 设备状态 ........................................... 9 5.1 查看设备信息 ....................................... 9 5.2 网络接口信息查看.................................... 9 5.2.1 查看以太网接口信息 ............................ 9 5.2.2 查看网络连接信息 .............................. 9 5.3 查看WLAN接口信息.................................... 9 6 网络设置 ...........................................11 6.1 宽带连接设置 ....................................... 11 6.1.1 设置宽带连接(瘦) ............................ 11 6.1.2 设置宽带连接(胖) ............................ 13 6.2 WLAN设置 ........................................... 14 6.2.1 设置基本信息 .................................. 14
第02讲++分子量与分子量分布
多分散系数: Polydispersity coefficient
Mw d Mn
单分散 Monodispersity
or
Mz d Mw
聚合物的分子量分布函数
• 聚合物的分子量分布用某些函数表示 • 理论或机理分布函数: 假设一个反应机理, 推出分布函数, 实验结果与理论一致, 则机理正确
– Schulz-Flory 最可几分布, Schulz分布, Poisson分布
溶液浓度c: 质量浓度( g/kg 或 g/ml ), Kb 和Kf 只与溶剂有关, 可用已知分子量的物质测定
一般形式
c T K1 K 2 c 2 K 3c 3 Mn K1 T 2 K 2 c K 3c c Mn
将 ⊿T/c 对浓度 c 作图, 外推至 c = 0, 截距为K1/Mn
分子量:分子的质量 g/mol 聚合度:分子链中结构单元的个数
500 (CH2 CH) 聚合 (CH2 CH) 500
聚合度x=500,分子量M=104500=52000g/mol
聚合物分子量的特点
1.聚合物分子量比低分子大几个数量级,一般在 103~107之间 聚合度与分子量的关系: M x Mu Mu为单元分子量 x M / Mu
2 2
n : 溶液的折光指数,近似等于溶剂的折光指数 n c : 溶液的折光指数增量; : 溶液的渗透压
浓度很小时, 粒子间的散射光不相干, 散射光强等于各粒 子的散射光强之和
用公式表示:
Z1 M 1 Z 2 M 2 Z 3 M 3 MZ Z1 Z 2 Z 3
3 3 N1M 13 N 2 M 2 N 3 M 3 2 2 2 N1 M 1 N 2 M 2 N 3 M 3