FQPF2N60中文资料
FQPF30N06L中文资料
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
GD S
TO-220F
FQPF Series
D
!
"
!"
G!
" "
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
VGS = 0 V, ID = 250 µA
60
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
SVF2N60
此区域工作受限于RDS(ON)
100µs 1ms 10ms
DC
注：
1.TC=25°C 2.Tj=150°C 3.单个信号
101
102
103
漏源电压 - VDS(V)
漏电流 - ID(A)
杭州士兰微电子股份有限公司
漏电流 - ID(A)
漏源导通电阻（标准化） – RDS(on)（Ω）
包装形式 料管 料管 袋装 料管 料管 料管 编带
杭州士兰微电子股份有限公司
版本号：1.4 2011.11.16 共11页 第1页
SVF2N60M/MJ/N/F/T/D 说明书
极限参数(除非特殊说明，TC=25°C)
参数名称
符号
漏源电压
VDS
栅源电压
VGS
2.0
1.3
8.0
35
30
44
0.28
0.24
0.35
115 -55～+150 -55～+150
SVF2N 单位 60F V V
A
A
23
W
0.18 W/°C
mJ
°C
°C
热阻特性
参数名称
芯片对管壳热阻 芯片对环境的热阻
符号
RθJC RθJA
SVF2N60M/D SVF2N60MJ
3.7
3.57
110
110
SVF2N60M/MJ/N/F/T/D 说明书
2A、600V N沟道增强型场效应管
描述
SVF2N60M/MJ/N/F/T/D N沟道增强型高压功率MOS场效应 晶体管采用士兰微电子的F-CellTM平面高压VDMOS 工艺技术制 造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导 通电阻、优越的开关性能及很高的雪崩击穿耐量。
DTL2N60规格书最新版
FEATURES•Halogen-free According to IEC 61249-2-21Definition•Dynamic dV/dt Rating•Repetitive Avalanche Rated •Available in Tape and Reel •Fast Switching •Ease of Paralleling•Compliant to RoHS Directive 2002/95/ECNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 37 mH, R g = 25 Ω, I AS = 2.0 A (see fig. 12).c.I SD ≤ 2.0 A, dI/dt ≤ 40 A/μs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.e.When mounted on 1" square PCB (FR-4 or G-10 material).PRODUCT SUMMARYV DS (V)600R DS(on) (Ω)V GS = 10 V3.9Q g (Max.) (nC)18Q gs (nC) 3.0Q gd (nC)8.9ConfigurationSingle ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARAMETER SYMB O L LIMIT UNIT Drain-Source Voltage V DS 600V Gate-Source Voltage V GS±20Continuous Drain Current V GS at 10 V T C = 25 °CI D2.0A T C = 100 °C1.3Pulsed Drain Current a I DM 8.0Linear Derating Factor0.33W/°C Linear Derating Factor (PCB Mount)e0.020Single Pulse Avalanche Energy bE AS 74mJ Repetitive Avalanche Current a I AR 2.0 A Repetitive Avalanche Energya E AR 4.2mJ Maximum Power DissipationT C = 25 °C P D42W Maximum Power Dissipation (PCB Mount)e T A = 25 °C 2.5Peak Diode Recovery dV/dt c dV/dt 3.0V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 150°CSoldering Recommendations (Peak Temperature)for 10 s 260d*Pb containing terminations are not RoHS compliant, exemptions may apply２３５５３Ｑ６８８７２黄Ｒ１３７６０３２电５０７０Notea.When mounted on 1" square PCB (FR-4 or G-10 material).Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETERSYMB O LMIN.TYP.MAX.UNITMaximum Junction-to-Ambient R thJA --110°C/W Maximum Junction-to-Ambient(PCB Mount)aR thJA --50Maximum Junction-to-Case (Drain)R thJC-- 3.0TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °C Fig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time WaveformsFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitFig. 14 - For N-ChannelTO-252AA (HIGH VOLTAGE)MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.E 6.40 6.730.2520.265L 1.40 1.770.0550.070L1 2.743 REF0.108 REFL20.508 BSC0.020 BSCL30.89 1.270.0350.050L40.64 1.010.0250.040D 6.00 6.220.2360.245H9.4010.400.3700.409b0.640.880.0250.035b20.77 1.140.0300.045b3 5.21 5.460.2050.215e 2.286 BSC0.090 BSCA 2.20 2.380.0870.094A10.000.130.0000.005c0.450.600.0180.024c20.450.580.0180.023D1 5.30-0.209-E1 4.40-0.173-θ0'10'0'10'ECN: S-81965-Rev. A, 15-Sep-08DWG: 5973Notes1.Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.2.Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, butincluding any mismatch between the top and bottom of the plastic body.3.The package top may be smaller than the package bottom.4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximummaterial condition. The dambar cannot be located on the lower radius of the foot.TO-251AA (HIGH VOLTAGE)MILLIMETERS INCHES MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.DIM.MIN.MAX.MIN.MAX.A 2.18 2.390.0860.094D1 5.21-0.205-A10.89 1.140.0350.045E 6.35 6.730.2500.265 b0.640.890.0250.035E1 4.32-0.170-b10.650.790.0260.031e 2.29 BSC 2.29 BSC b20.76 1.140.0300.045L8.899.650.3500.380 b30.76 1.040.0300.041L1 1.91 2.290.0750.090 b4 4.95 5.460.1950.215L20.89 1.270.0350.050 c0.460.610.0180.024L3 1.14 1.520.0450.060 c10.410.560.0160.022θ10'15'0'15' c20.460.860.0180.034θ225'35'25'35'D 5.97 6.220.2350.245ECN: S-82111-Rev. A, 15-Sep-08DWG: 5968Notes1.Dimensioning and tolerancing per ASME Y14.5M-1994.2.Dimension are shown in inches and millimeters.3.Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at theoutermost extremes of the plastic body.4.Thermal pad contour optional with dimensions b4, L2, E1 and D1.5.Lead dimension uncontrolled in L3.6.Dimension b1, b3 and c1 apply to base metal only.7.Outline conforms to JEDEC outline TO-251AA.A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR DPAK (TO-252)。
2N60 产品资料 2N60 产品资料
2、性能指标
极限值：（除其他标注外Tamb= 25℃）
参数
符号
数值
单位
最大漏源电压 栅源电压 雪崩电流 最大持续漏电流 最大脉冲漏电流
VDSS
600
V
VGS
±30
V
IAR
2
A
ID
2
A
(注1)
IDM
8
A
雪崩能量（单脉冲）
(注2)
EAR
140
mJ
峰值二极管恢复dv/dt
(注3)
dv/dt
4.5
V/ns
最大耗散功率 工作结温/储存温度范围
7-1
2N60 产品资料
功率MOSEFT—2N60 2A，600V N沟道
2N60功率MOS场效应管采用先进的高压DMOS工艺技术。这种先进工艺使器件具有优良的特性，如极快 的开关速度，极低栅电荷，最小化的导通电阻以及极强的雪崩击穿特性。这种器件非常适合于高效开关电源， DC/DC转换器，PWM马达控制和桥式驱动电路等。
注释:
⑴ 重复范围: 脉冲宽度受结温限制
⑵ L = 64mH, IAS = 2A, VDD = 50V, RG = 25 Ω, 开始TJ = 25°C ⑶ ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, 开始 TJ = 25°C
⑷ 脉冲测试: 脉冲宽度<= 300us, 占空比<=2%
25 60 ns
20 50
下降时间
tf
25 60
栅电荷 栅-源电荷 栅-漏电荷
Qg VDS =480V；VGS =10V；ID=2.4A (注4, 注5)
9 11
1.6
2N60中文资料
UNISONIC TECHNOLOGIES CO., LTD2N60 Power MOSFET2 Amps, 600 Volts N-CHANNEL MOSFETDESCRIPTIONThe UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high ruggedavalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.FEATURES* R DS(ON) = 3.8Ω@V GS = 10V.* Ultra Low gate charge (typical 9.0nC)* Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 2N60LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube 2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube 2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube 2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel 2N60-TN3-T 2N60L-TN3-T TO-252 G D S TubeNote: Pin Assignment: G: Gate D: Drain S: SourceABSOLUTE MAXIMUM RATINGS (T C = 25℃, unless otherwise specified)PARAMETER SYMBOL RATINGS UNITDrain-Source Voltage V DSS 600 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 2.0 AT C = 25°C 2.0 ADrain Current ContinuousT C = 100°C I D 1.26 ADrain Current Pulsed (Note 2) I DP 8.0 ARepetitive(Note 2) E AR 4.5 mJAvalanche EnergySingle Pulse(Note 3) E AS 140 mJPeak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/nsT C = 25°C 45 WTotal Power Dissipation Derate above 25°C P D0.36 W/Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, I AS =2.0A, V DD =50V, R G =25 Ω, Starting T J = 25°C 4. I SD ≤ 2.4A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°CTHERMAL DATAPARAMETER PACKAGE SYMBOL RATINGS UNITTO-251 112 TO-252 112TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA54TO-251 12 TO-252 12TO-220 4 Thermal Resistance Junction-Case TO-220F θJc4/WELECTRICAL CHARACTERISTICS (T J =25℃, unless Otherwise specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = 250µA 600 VV DS = 600V, V GS = 0V 10 µAZero Gate Voltage Drain Current I DSSV DS = 480V, T C = 125°C100µA Forward V GS = 30V, V DS = 0V 100nAGate-Body Leakage Current Reverse I GSSV GS = -30V, V DS = 0V-100nA Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 250 µA 0.4 V/On Characteristics Gate Threshold Voltage V GS(TH)V DS = V GS , I D = 250µA 2.0 4.0V Static Drain-Source On-Resistance R DS(ON)V GS = 10V, I D =1A 3.8 5 Ω Forward Transconductance g FS V DS = 50V, I D = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance C ISS 270 350pFOutput Capacitance C OSS 40 50 pFReverse Transfer Capacitance C RSS V DS =25V, V GS =0V, f =1MHz 5 7 pFELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSwitching Characteristics Turn-On Delay Time t D (ON) 10 30 ns Rise Time t R 25 60 ns Turn-Off Delay Time t D(OFF) 20 50 nsFall Time t FV DD =300V, I D =2.4A, R G =25Ω(Note 1,2) 25 60 ns Total Gate Charge Q G 9.0 11 nCGate-Source Charge Q GS 1.6 nCGate-Drain Charge Q GDV DS =480V, V GS =10V, I D =2.4A(Note 1, 2)4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage V SD V GS = 0 V, I SD = 2.0 A 1.4V Continuous Drain-Source Current I SD 2.0 A Pulsed Drain-Source Current I SM 8.0 AReverse Recovery Time t RR 180 nsReverse Recovery Charge Q RR V GS = 0 V, I SD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µC Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%2. Essentially Independent of Operating TemperatureTEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS10010101010-1100Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )10102Gate-Source Voltage , V GS (V)D r a i n C u r r e n t , I D (A )Transfer Characteristics46810On-Region Characteristics0D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) ()Drain Current , I D (A)122481012On-Resistance Variation vs . Drain Current andGate Voltage634560.2Source-Drain Voltage , V SD (V)Body Diode Forward Voltage Variation vs.Source Current and Temperature 1.60.40.60.8 1.0 1.2 1.4500010Drain -Source Voltage, V DS (V)C a p a c i t a n c e (p F )Capacitance vs. Drain-Source Voltage4001001001013002000G a t e -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)261081012Gate Charge vs. Gate Charge Voltage46408TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d ow n V o l t a g e , V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage vs . Temperature 0-100D r a i n -S o u r c e O n -R e s i st a n c e , R D S (O N ) (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150On-Resistance vs . Temperature101010Drain-Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )Max. Safe Operating Area 1010101010D r a i n C u r r e n t , I D (A )Case Temperature , T C (℃)75100150Max. Drain Current vs. Case Temperature 0.012550250.51.01.52.0Square Wave Pulse Duration , t1(s)T h e r m a l R e s p o n s e , J C (t )Thermal Response101010101010101010。
FQD2N60C中文资料
500 450 400 350 300 250 200 150 100 50
0 10-1
C iss
C oss
Crss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
※ Notes ; 1. VGS = 0 V 2. f = 1 MHz
Rev. A, October 2003
FQD2N60C / FQU2N60C
元器件交易网
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Figure 1. On-Region Characteristics
12
10
V = 10V
8
GS
6
4 V = 20V
GS
2 ※ Note : TJ = 25℃
0
0
1
2
3
4
5
ID, Drain Current [A]
FQP6N60C资料
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
元器件交易网
FQP6N60C/FQPF6N60C
Typical CharacteristicsTypical Characteristics
(Continued)
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP6N60C 600 5.5 3.3 22
FQPF6N60C 5.5 * 3.3 * 22 * ± 30 300 5.5 12.5 4.5
D
!
●
◀
▲
● ●
G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
FQPF2N60C资料
100
150℃ 25℃
※ Notes :
1. 2.
2V5GS0μ=s0VPulse
Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
VGS = 0 V, IS = 2 A,
-- 230
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP2N60C 2.32 0.5 62.5
FQPF2N60C 5.5 -62.5
元器件交易网
FQP2N60C/FQPF2N60C
FQP2N60C/FQPF2N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FKPF12N60中文资料
FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
FQPF12N60中文资料
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
©2000 Fairchild Semiconductor International
Rev. A, April 2000
元器件交易网
FQPF12N60
ID , Drain Current [A]
Typical Characteristics
DS(on) R [Ω], Drain-Source On-Resistance
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF12N60 600 5.8 3.7 23 ±30 790 5.8 5.5 4.5 55 0.44
-55 to +150
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
fqpf7n80c场效应管参数
一、场效应管概述场效应管（Field-Effect Transistor，简称FET），是一种可以用来控制电流的电子元件。
它的工作原理是利用外加电场调节电子的传输情况，因此得名。
相比双极晶体管，场效应管具有输入阻抗大、失真小、噪声低等优点，因此在现代电子电路中得到广泛应用。
二、场效应管的类型根据不同的工作原理和结构，场效应管可以分为MOSFET（金属氧化物半导体场效应晶体管）和JFET（结型场效应晶体管）两种类型。
其中，MOSFET主要应用在大规模集成电路和功率器件中，而JFET则多用于低噪声放大器和高输入电阻的电路中。
三、场效应管的参数1. 静态参数静态参数是指场效应管在静态工作状态下所表现出的特性。
主要包括沟道阻抗、漏极电流、栅极截止电压和饱和电流等。
这些参数对于确定场效应管的工作状态和放大特性具有重要的意义。
2. 动态参数动态参数是指场效应管在变化的工作状态下所表现出的特性。
主要包括输入电容、跨导、截止频率和噪声系数等。
这些参数对于评估场效应管在高频放大和信号处理中的性能具有重要的意义。
四、场效应管参数的影响因素1. 材料场效应管所采用的半导体材料对其性能具有重要的影响。
不同的材料具有不同的载流子迁移率、禁带宽度和掺杂浓度等特性，直接影响场效应管的电路特性。
2. 结构场效应管的结构形式会影响其输入输出特性和频率响应。
MOSFET 和JFET的结构差异导致其工作特性不同，因此在电路设计中需要根据实际需求选择合适的结构。
3. 工艺制造工艺对场效应管参数的稳定性和一致性具有重要的影响。
良好的工艺能够保证场效应管的性能稳定，并且可以生产出一致性较高的器件，满足现代电子产品对于性能和品质的要求。
五、场效应管参数的测试方法场效应管参数的测试通常采用直流和交流两种方法。
直流测试可以测量场效应管的静态参数，如漏极电流和栅极截止电压；而交流测试则可以测量场效应管的动态参数，如频率响应和噪声特性。
根据实际需求，选择合适的测试方法可以准确评估场效应管的性能。
FCPF20N60中文资料
FCP20N60 / FCPF20N60 600V N-Channel MOSFETFCP20N60 / FCPF20N60 600V N-Channel MOSFETPackage Marking and Ordering InformationElectrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 10A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 20A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsDevice MarkingDevicePackageReel SizeTape WidthQuantityFCP20N60FCP20N60TO-220--50FCPF20N60FCPF20N60TO-220F--50SymbolParameterConditionsMinTypMax UnitsOff Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA, T J = 25°C 600----V V GS = 0V, I D = 250µA, T J = 150°C --650--V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250µA, Referenced to 25°C --0.6--V/°C BV DS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 20A --700--V I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C --------110µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 10A --0.150.19Ωg FS Forward Transconductance V DS = 40V, I D = 10A (Note 4)--17--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--23703080pF C oss Output Capacitance--12801665pF C rss Reverse Transfer Capacitance --95--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --6585pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --165--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 20A R G = 25Ω(Note 4, 5)--62135ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --230470ns t f Turn-Off Fall Time --65140ns Q g Total Gate Charge V DS = 480V, I D = 20A V GS = 10V(Note 4, 5)--7598nC Q gs Gate-Source Charge --13.518nC Q gd Gate-Drain Charge--36--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----20A I SM Maximum Pulsed Drain-Source Diode Forward Current ----60A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 20A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 20AdI F /dt =100A/µs (Note 4)--530--ns Q rrReverse Recovery Charge--10.5--µCTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FCP20N60 / FCPF20N60 600V N-Channel MOSFETDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™。
FQP12N60C中文资料
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
元器件交易网
FQP12N60C/FQPF12N60C
Typical Characteristics
V Top : 15.0GSV
10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 101 Bottom : 4.5 V
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2003 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
2.0 --
4.0
V
VGS = 10 V, ID = 6 A
-- 0.53 0.65
Ω
VDS = 40 V, ID = 6 A
(Note 4) --
13
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
士兰微电子 SVF2N60CN NF M MJ F D 说明书 2A、600V N沟道增强型场效应管
2A、600V N沟道增强型场效应管描述SVF2N60CN/NF/M/MJ/F/D N沟道增强型高压功率MOS场效应晶体管采用士兰微电子的F-Cell TM平面高压VDMOS工艺技术制造。
先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。
该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。
特点♦2A，600V，R DS(on)(典型值)=3.7Ω@V GS=10V♦低栅极电荷量♦低反向传输电容♦开关速度快♦提升了dv/dt 能力命名规则士兰F-Cell工艺VDMOS产品标识额定电流标识,采用1-2位数字；例如:4 代表 4A,10 代表 10A, 08 代表 0.8A额定耐压值，采用2位数字例如：60表示600V,65表示650V封装外形标识例如：N:TO-126; NF:TO-126F;M:TO-251D; MJ:TO-251J;F:TO-220F; D:TO-252;S V F X N E X X C X沟道极性标识，N代表N 沟道特殊功能、规格标识，通常省略例如：E 表示内置了ESD保护结构版本产品规格分类产 品 名 称 封装形式 打印名称 材料 包装形式 SVF2N60CN TO-126-3L SVF2N60CN 无铅料管SVF2N60CN TO-126-3L SVF2N60CN 无铅袋装SVF2N60CNF TO-126F-3L SVF2N60CNF 无铅料管SVF2N60CM TO-251D-3L SVF2N60C 无卤料管SVF2N60CMJ TO-251J-3L SVF2N60C 无卤料管SVF2N60CF TO-220F-3L SVF2N60CF 无铅料管SVF2N60CD TO-252-2L SVF2N60CD 无卤料管SVF2N60CDTR TO-252-2L SVF2N60CD 无卤编带极限参数(除非特殊说明，TC=25°C)参 数 名 称 符号参数范围单位 SVF2N60CNSVF2N60CNFSVF2N60CM/DSVF2N60CMJSVF2N60CF漏源电压V DS600 V 栅源电压V GS±30 V漏极电流T C=25°CI D2.0A T C=100°C 1.3漏极脉冲电流I DM8.0 A耗散功率(T C=25°C)- 大于25°C每摄氏度减少P D30 16 34 35 23 W0.24 0.13 0.27 0.28 0.18 W/°C单脉冲雪崩能量(注1) E AS115 mJ 工作结温范围T J-55～+150 °C 贮存温度范围T stg-55～+150 °C热阻特性参数名称符号参数范围单位SVF2N60CNSVF2N60CNFSVF2N60CM/DSVF2N60CMJSVF2N60CF芯片对管壳热阻RθJC 4.17 7.81 3.7 3.57 5.56 °C/W 芯片对环境的热阻RθJA62.5 120 62.0 62.0 62.5 °C/W电性参数(除非特殊说明，TC=25°C)参 数 符 号 测试条件 最小值 典型值 最大值 单位 漏源击穿电压B VDSS V GS=0V，I D=250µA 600 -- -- V漏源漏电流I DSS V DS=600V，V GS=0V -- -- 1.0 µA栅源漏电流I GSS V GS=±30V，V DS=0V -- -- ±100 nA栅极开启电压V GS(th)V GS= V DS，I D=250µA 2.0 -- 4.0 V导通电阻R DS(on)V GS=10V，I D=1.0A -- 3.7 4.2 Ω输入电容C issV DS=25V，V GS=0V，f=1.0MHz 179 233 303pF输出电容C oss-- 32 -- 反向传输电容C rss-- 2.8 --开启延迟时间t d(on)V DD=300V，I D=2.0A，R G=25Ω(注2，3) -- 8.9 --ns开启上升时间t r-- 23.0 -- 关断延迟时间t d(off)-- 23.4 -- 关断下降时间t f-- 24.9 --栅极电荷量Q gV DS=480V，I D=2.0A，V GS=10V(注2，3) -- 8.24 --nC栅极-源极电荷量Q gs-- 1.64 -- 栅极-漏极电荷量Q gd-- 4.44 --源-漏二极管特性参数参 数符号 测试条件最小值 典型值 最大值 单位 源极电流 I S MOS 管中源极、漏极构成的反偏P-N 结-- -- 2.0 A 源极脉冲电流 I SM -- -- 8.0 源-漏二极管压降 V SD I S =2.0A ，V GS =0V -- -- 1.4 V 反向恢复时间 T rr I S =2.0A ，V GS =0V ， dI F /dt=100A/µS-- 326 -- ns 反向恢复电荷 Q rr--0.87--µC注：1. L=30mH ，I AS =2.52A ，V DD =100V ，R G =25Ω，开始温度 T J =25°C ； 2. 脉冲测试： 脉冲宽度≤300μs ，占空比≤2%；3. 基本上不受工作温度的影响。
FAIRCHILD FQPF30N06L 数据手册
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQPF30N06LTO-220FG SDNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 810µH, I AS = 22.5A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 32A, di/dt ≤ 300A/us, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300us, Duty cycle ≤2%5. Essentially independent of operating temperature/ ∆T J CoefficientD I DSS Zero Gate Voltage Drain Current V DS = 60 V, V GS = 0 V ----1µA V DS = 48 V, T C = 150°C ----10µA I GSSF Gate-Body Leakage Current, Forward V GS = 20 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -20 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA1.0--2.5V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 11.3 AV GS = 5 V, I D =11.3 A ----0.0270.0350.0350.045Ωg FSForward TransconductanceV DS = 25 V, I D = 11.3 A --22--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--8001040pF C oss Output Capacitance--270350pF C rssReverse Transfer Capacitance--5065pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 30 V, I D = 16 A,R G = 25 Ω--1540ns t r Turn-On Rise Time --210430ns t d(off)Turn-Off Delay Time --60130ns t f Turn-Off Fall Time --110230ns Q g Total Gate Charge V DS = 48 V, I D = 32 A,V GS = 5 V--1520nC Q gs Gate-Source Charge -- 3.5--nC Q gdGate-Drain Charge--8.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----22.5A I SM Maximum Pulsed Drain-Source Diode Forward Current----90A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 22.5 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 32 A,dI F / dt = 100 A/µs --60--ns Q rrReverse Recovery Charge--90--nC(Note 4)(Note 4, 5)(Note 4, 5)(Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。
FAIRCHILD FQPF6N90 说明书
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQPF6N90(Note 4)(Note 4, 5)(Note 4, 5) (Note 4)Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 116mH, I AS =3.4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C 3. I SD ≤ 5.8A, di/dt ≤ 200A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperature∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.96--V/°C I DSS Zero Gate Voltage Drain Current V DS = 900 V, V GS = 0 V ----10µA V DS = 720 V, T C = 125°C ----100µA I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -30 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 1.7 A -- 1.5 1.9Ωg FSForward TransconductanceV DS = 50 V, I D = 1.7 A -- 3.8--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--14401880pF C oss Output Capacitance--140185pF C rssReverse Transfer Capacitance--1723pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 450 V, I D = 5.8 A,R G = 25 Ω--3580ns t r Turn-On Rise Time --80170ns t d(off)Turn-Off Delay Time --95200ns t f Turn-Off Fall Time --55120ns Q g Total Gate Charge V DS = 720 V, I D = 5.8 A,V GS = 10 V--4052nC Q gs Gate-Source Charge --8.5--nC Q gdGate-Drain Charge--20--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 3.4A I SM Maximum Pulsed Drain-Source Diode Forward Current----13.6A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 3.4 A ---- 1.4V t rr Reverse Recovery Time V GS = 0 V, I S = 5.8 A,dI F / dt = 100 A/µs--400--ns Q rrReverse Recovery Charge-- 4.3--µCDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
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FQPF2N60
Typical Characteristics (Continued)
BV DSS , (Normalized) Drain-Source Breakdown Voltage
1.2
C iss
C oss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
200
Notes :
Crss
1. VGS = 0 V 2. f = 1 MHz
100
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
Features
• 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V • Low gate charge ( typical 9.0 nC) • Low Crss ( typical 5.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
-- 3.7
VDS = 50 V, ID = 0.8 A (Note 4) --
2.0
Dynamic Characteristics
Ciss Coss
Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
300
Typ
Max
--
4.46
--
62.5
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °CW °CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF2N60
元器件交易网
-- 270
--
40
--
5
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
FQPF2N60 600 1.6 1.0 6.4 ±30 140 1.6 2.8 4.5 28 0.22
-55 to +150
©2000 Fairchild Semiconductor International
Rev. A, April 2000
元器件交易网
FQPF2N60
ID, Drain Current [A]
Typical Characteristics
DS(ON) R [ ], Drain-Source On-Resistance
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
元器件交易网
FQPF2N60
FQPF2N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
--
--
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
VGS = 10 V, ID = 0.8 A
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
GD S
TO-220F
FQPF Series
D
!
"
!"
G!" "来自!SAbsolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
12
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 2.4A
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
元器件交易网
12
10
VGS = 10V
VGS = 20V 8
6
4
2
Note : TJ = 25
0
0
1
2
3
4
5
6
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
500 400 300
100
10-1 0.2
150 25
Notes : 1. V =0V
GS
2. 250s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
--
--
1.6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
6.4
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A
--
--
1.4
V
trr
Reverse Recovery Time
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
ID , Drain Current [A]
150 100
25 -55
10-1 2
Notes : 1. VDS = 50V 2. 250s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics