TS4B05G中文资料

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SS54B中文资料

REVERSE VOLTAGE - 20 to 100 Volts FORWARD CURRENT - 5.0 Amperes SMB
.083(2.11) .075(1.91)
.155(3.94) .130(3.30)
free wheeling, and polarity protection applications
元器件交易网
SS52B thru SS510B
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES
● Metal-Semiconductor junction with gard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low vlotage, high frequency inverters,
SYMBOL VRRM VRMS VDC I(AV)
SS52B 20 14 20
SS53B 30 21 30
SS54B 40 28 40
SS55B 50 35 50 5.0
SS56B 60 42 60
SS58B 80 56 80
SS VF IR CJ RθJA TJ TSTG 500 15 0.45 0.55 0.6
~ 174 ~
.185(4.70) .160(4.06) .012(.305) .006(.152) .096(2.44) .084(2.13)
MECHANICAL DATA

SS34B中文资料

TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190
Instantaneous Reverse current (mA) IR Reverse Leakage Current (mA)
Number of Cycles at 60Hz Fig.4- Typical Reverse Characteristics
Instantaneous Forward Voltage (V) Percentage of Peak Reverse Voltage (%) Fig.5- Typical Junction Capacitance
IF(AV) Average Rectified Current (A) Instantaneous Forward current (A)
Fig.2- Max. Non-Repetitive Forward Surge Current
Ambient Temperature Ta (°C) Fig.3- Typical Forward Characteristics
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS,ห้องสมุดไป่ตู้2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052

T8534中文资料

The device is available in 68-pin, 64-pin, and 44-pin surface-mount packages for economic use of board space.
T8533/34 Quad ProgramProcessor
The PCM bus is also programmable, with any channel capable of being assigned to any time slot. The PCM bus can be operated at speeds up to 16.384 Mbits/s, allowing for a maximum of 256 time slots. Separate transmit and receive interfaces are available for 4-wire bus designs, or they can be strapped together for a 2-wire PCM bus.
s Programmable µ-law, linear, or A-law PCM input and output (ITU-T G.712 compliant)
s Per-channel programmable gains s Per-channel programmable internal termination
Preliminary Data Sheet July 2001
T8533/34 Quad Programmable Line Card Signal Processor
Features
s Includes codec, termination impedance, and echo canceller in one device for line card applications

BTRS-5940A-SPG中文资料

***********************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303BTRS-5940G / BTRS-5940-SPG / BTRS-5940AG / BTRS-5940A-SPG1490 nm TX / 1310 nm RX , 3.3V / 155 Mbps RoHS Compliant Single-Fiber Transceiver*********************************************************************************************************************************************************************FEATURESl Single Fiber Bi-Directional Transceiver l 1490 nm DFB LD Transmitter l 1310 nm Receiver l Distance Up to 40 kml Single +3.3 V Power Supply l RoHS Compliantl LVPECL Differential Inputs and Outputs l 0 to 70o C Operating : BTRS-5940G l -20 to 85o C Operating : BTRS-5940AG l Wave Solderable and Aqueous Washablel Class 1 Laser International Safety Standard IEC-60825 CompliantAPPLICATIONSl WDM 622/155 Mb/s Linksl SONET/SDH Equipment Interconnect l Fiber Channel 532 Mb/s LinksDESCRIPTIONThe BTRS-5940G series is high performance module for single fiber communications by using 1490 nm transmitter and 1310 nm receiver. The transmitter section uses a multiple quantum well 1490 nm DFB laser and is a class 1 laser compliant according to International Safety Standard IEC-825. The receiver section uses an integrated 1310 nm detector preamplifier (IDP) mounted in an optical header and a limiting post-amplifier IC. A PECL logic interface simplifies interface to external circuitry.LASER SAFETYThis single mode transceiver is a Class 1 laser product. It complies with IEC 825 and FDA 21 CFR 1040.10 and 1040.11. The transceiver must be operated within the specified temperature and voltage limits. The optical ports of the module shall be terminated with an optical connector or with a dust plug.ORDER INFORMATIONP/No.Bit Rate (Mb/s) Distance (km) TX (nm) RX (nm) Voltage (V) Package Temp (o C)TX Power (dBm) RX Sens. (dBm) RoHS Compliant BTRS-5940G 622 40 1490 DFB 1310 3.3 2X5 SC 0 to 70 0 to -5 -28 Yes BTRS-5940AG622401490 DFB13103.32X5 SC -20 to 850 to -5-28YesNote: 1. BTRS-XXXXX: 2X5 SC receptacle type package. BTRL-XXXXX: 2X5 LC receptacle type package.2. BTRX-XXXXX-APBBB is 2X5 pigtail type package with different connector, A=S is SC connector, A=F is FC connector, A=T is ST connector, A=L is LC connector, A=M is MU connector; BBB is the length of fiber in cm.Absolute Maximum RatingsParameterSymbol Min Max Units NotesStorage Temperature Tstg -40 85 o COperating Temperature Topr 0 -20 70 85 o CBTRS-5940G BTRS-5940AGSoldering Temperature --- 260 oC 10 seconds on leads only Power Supply Voltage Vcc 0 4.5 V Input Voltage --- GND Vcc VOutput CurrentIout30mARecommended Operating ConditionsParameterSymbol Min Typ Max Units / NotesPower Supply Voltage Vcc 3.13 3.3 3.47 VOperating Temperature Topr 0 -20 70 85 oC / BTRS-5940G oC / BTRS-5940AGData Rate50 622 650 Mb/s Power Supply CurrentIcc260mATransmitter Specifications (0o C < Topr < 70o C, 3.13V < Vcc < 3. 47V)Parameter Symbol Min Typ Max Units NotesOpticalOptical Transmit Power Po -5 0 dBm 1Output Center Wavelength λ1480 1500 nmOutput Spectrum Width σλ 1 nm -20 dB Width Extinction Ratio E R10 dBOutput Eye Compliant with Bellcore TR-NWT-000253 and ITU recommendation G.957Optical Rise Time t r 1.2 ns 10% to 90% Values Optical Fall Time t f 1.2 ns 10% to 90% Values Relative Intensity Noise RIN -116 dB/HzTotal Jitter TJ 0.55 ns 2ElectricalData Input Current – Low I IL-350 µAData Input Current – High I IH350 µADifferential Input Voltage V IH - V IL300 1600 mVData Input Voltage – Low V IL - V CC-2.0 -1.58 V 3Data Input Voltage -- High V IH - V CC-1.1 -0.74 V 3Disable Input Voltage -- Low V TDIS,L0 0.8 V TX Output Enabled Disable Input Voltage -- High V TDIS,H Vcc – 1.3 Vcc V TX Ouput DisabledShut Off Time for TxDis t DIS 1 msNotes: 1. Output power is power coupled into a 9/125 µm single mode fiber.2. Measured with a 223-1 PRBS with 72 ones and 72 zeros.3. These inputs are compatible with 10K, 10KH and 100K ECL and LVPECL inputs.Receiver Specifications(0o C < Topr < 70o C, 3.13 V < Vcc < 3. 47V)Parameter Symbol Min Typ Max Units NotesOpticalSensitivity--- --- --- -28 dBm 1Maximum Input Power Pin -5 --- --- dBmSignal Detect -- Asserted Pa --- --- -28 dBm Transition: low to high Signal Detect -- Deasserted Pd -42 --- --- dBm Transition: high to low Signal detect -- Hysteresis 1.0 --- 4.0 dBWavelength of Operation 1260 1360 nm 2Optical Return Loss ORL 14 dBElectricalData Output Voltage – Low V OL - V CC-2.0 -1.58 V 3Data Output Voltage – High V OH - V CC-1.1 -0.74 V 3SD Output Voltage -- Low V OL - V CC-2.0 -1.58 V 3SD Output Voltage -- High V OH - V CC-1.1 -0.74 V 3Signal Detect Assert Time AS MAX100 µs OFF to ONSignal Detect Deassert Time ANS MAX300 µs ON to OFF Notes: 1. Minimum sensitivity and saturation levels at BER 1E-10 for a 223-1 PRBS with 72 ones and 72 zeros.2. At least 30 dB optical isolation for the wavelength 1480 to 1580 nm.3. These outputs are compatible with 10K, 10KH and 100K ECL and LVPECL outputs.********************************************************************************************************************************************************************* OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303 Tel: 886-3-5979798 Fax: 886-3-5979737********************************************************************************************************************************************************************* OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303 Tel: 886-3-5979798 Fax: 886-3-5979737RECOMMENDED CIRCUIT SCHEMATIC1)Recommended DC Coupled Interface Circuit2)Recommended AC Coupled Interface Circuit********************************************************************************************************************************************************************* OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303 Tel: 886-3-5979798 Fax: 886-3-5979737。

NGB8202NT4G资料

NGB8202NIgnition IGBT20 A, 400 V, N−Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.Features•Ideal for Coil−on−Plug and Driver−on−Coil Applications •Gate−Emitter ESD Protection•Temperature Compensated Gate−Collector V oltage Clamp Limits Stress Applied to Load•Integrated ESD Diode Protection•Low Threshold V oltage for Interfacing Power Loads to Logic or Microprocessor Devices•Low Saturation V oltage•High Pulsed Current Capability•Optional Gate Resistor (R G) and Gate−Emitter Resistor (R GE)•Pb−Free Package is AvailableApplications•Ignition SystemsMAXIMUM RATINGS (T J = 25°C unless otherwise noted)Rating Symbol Value Unit Collector−Emitter Voltage V CES440V Collector−Gate Voltage V CER440V Gate−Emitter Voltage V GE"15V Collector Current−Continuous@ T C = 25°C −Pulsed I C2050A DCA ACContinuous Gate Current I G 1.0mA Transient Gate Current (t≤2 ms, f≤100 Hz)I G20mAESD (Charged−Device Model)ESD 2.0kVESD (Human Body Model) R = 1500 W, C = 100 pF ESD8.0kVESD (Machine Model) R = 0 W, C = 200 pF ESD500VTotal Power Dissipation @ T C = 25°C Derate above 25°C P D1501.0WW/°COperating & Storage Temperature Range T J, T stg−55 to +175°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.D2PAKCASE 418BSTYLE 4Device Package Shipping†ORDERING INFORMATIONNGB8202NT4D2PAK800/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.NGB8202NT4G D2PAK(Pb−Free)800/Tape & ReelMARKING DIAGRAMGB8202NGAYWW1Gate3Emitter4Collector2CollectorGB8202N= Device CodeA= Assembly LocationY= YearWW= Work WeekG=Pb−Free Package1UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55°≤ T J≤ 175°C)Characteristic Symbol Value UnitSingle Pulse Collector−to−Emitter Avalanche EnergyV CC = 50 V, V GE = 5.0 V, Pk I L = 16.7 A, R G = 1000 W, L = 1.8 mH, Starting T J = 25°C V CC = 50 V, V GE = 5.0 V, Pk I L = 14.9 A, R G = 1000 W, L = 1.8 mH, Starting T J = 150°C V CC = 50 V, V GE = 5.0 V, Pk I L = 14.1 A, R G = 1000 W, L = 1.8 mH, Starting T J = 175°C E AS250200180mJReverse Avalanche EnergyV CC = 100 V, V GE = 20 V, Pk I L = 25.8 A, L = 6.0 mH, Starting T J = 25°C E AS(R)2000mJTHERMAL CHARACTERISTICSThermal Resistance, Junction−to−Case R q JC 1.0°C/W Thermal Resistance, Junction−to−Ambient (Note 1)R q JA62.5°C/W Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)T L275°C1.When surface mounted to an FR4 board using the minimum recommended pad size.2.For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.ELECTRICAL CHARACTERISTICSCharacteristic Symbol Test Conditions Temperature Min Typ Max Unit OFF CHARACTERISTICSCollector−Emitter Clamp Voltage BV CES I C = 2.0 mA T J = −40°C to 175°C370395420VI C = 10 mA T J = −40°C to 175°C390415440Zero Gate Voltage Collector Current I CES V GE = 0 V,V CE = 15 VT J = 25°C0.1 1.0m AV CE = 200 V, V GE = 0 V T J = 25°C0.5 1.510m A T J = 175°C 1.025100*T J = −40°C0.40.8 5.0Reverse Collector−Emitter Clamp Voltage B VCES(R)I C = −75 mAT J = 25°C303539VT J = 175°C353945*T J = −40°C303337Reverse Collector−Emitter Leakage Current I CES(R)V CE = −24 VT J = 25°C0.050.10.5mAT J = 175°C 1.0 5.010*T J = −40°C0.0050.010.1Gate−Emitter Clamp Voltage BV GES I G = "5.0 mA T J = −40°C to 175°C1212.514V Gate−Emitter Leakage Current I GES V GE = "5.0 V T J = −40°C to 175°C200300350*m A Gate Resistor (Optional)R G T J = −40°C to 175°C70W Gate−Emitter Resistor R GE T J = −40°C to 175°C14.251625k W ON CHARACTERISTICS (Note 3)Gate Threshold Voltage V GE(th)I C = 1.0 mA,V GE = V CE T J = 25°C 1.5 1.8 2.1V T J = 175°C0.7 1.0 1.3T J = −40°C 1.7 2.0 2.3*Threshold Temperature Coefficient(Negative)4.0 4.65.2mV/°C*Maximum Value of Characteristic across Temperature Range.3.Pulse Test: Pulse Width v 300 m S, Duty Cycle v 2%.ELECTRICAL CHARACTERISTICSCharacteristic Symbol Test Conditions Temperature Min Typ Max Unit ON CHARACTERISTICS (Note 4)Collector−to−Emitter On−Voltage V CE(on)I C = 6.5 A,V GE = 3.7 V T J = 25°C0.95 1.15 1.35V T J = 175°C0.70.95 1.15T J = −40°C 1.0 1.3 1.40I C = 9.0 A, V GE = 3.9 V T J = 25°C0.95 1.25 1.45 T J = 175°C0.8 1.05 1.25 T J = −40°C 1.1 1.4 1.5I C = 7.5 A, V GE = 4.5 V T J = 25°C0.85 1.15 1.4 T J = 175°C0.70.95 1.2 T J = −40°C 1.0 1.3 1.6*I C = 10 A, V GE = 4.5 V T J = 25°C 1.0 1.3 1.6 T J = 175°C0.8 1.05 1.4 T J = −40°C 1.1 1.4 1.7*I C = 15 A, V GE = 4.5 V T J = 25°C 1.15 1.45 1.7 T J = 175°C 1.0 1.3 1.55 T J = −40°C 1.25 1.55 1.8*I C = 20 A, V GE = 4.5 V T J = 25°C 1.3 1.6 1.9 T J = 175°C 1.2 1.5 1.8 T J = −40°C 1.4 1.75 2.0*Forward Transconductance gfs I C = 6.0 A,V CE = 5.0 VT J = 25°C101825Mhos DYNAMIC CHARACTERISTICSInput Capacitance C ISSf = 10 kHz, V CE = 25 V T J = 25°C 110013001500pFOutput Capacitance C OSS708090 Transfer Capacitance C RSS182022 SWITCHING CHARACTERISTICSTurn−Off Delay Time (Resistive)t d(off)V CC = 300 V, I C = 9.0 AR G = 1.0 k W, R L = 33 W,V GE = 5.0 V T J = 25°C 6.08.010m Sec T J = 175°C 6.08.010Fall Time (Resistive)t f T J = 25°C 4.0 6.08.0T J = 175°C8.010.514Turn−Off Delay Time (Inductive)t d(off)V CC = 300 V, I C = 9.0 AR G = 1.0 k W,L = 300 m H, V GE = 5.0 V T J = 25°C 3.0 5.07.0 T J = 175°C 5.07.09.0Fall Time (Inductive)t f T J = 25°C 1.5 3.0 4.5T J = 175°C 5.07.010Turn−On Delay Time t d(on)V CC = 14 V, I C = 9.0 AR G = 1.0 k W, R L = 1.5 W,V GE = 5.0 V T J = 25°C 1.0 1.5 2.0 T J = 175°C 1.0 1.5 2.0Rise Time t r T J = 25°C 4.0 6.08.0T J = 175°C 3.0 5.07.0 *Maximum Value of Characteristic across Temperature Range.4.Pulse Test: Pulse Width v 300 m S, Duty Cycle v 2%.TYPICAL ELECTRICAL CHARACTERISTICSFigure 5. Collector Current vs.Collector −to −Emitter Voltage Figure 6. Collector Current vs.Collector −to −Emitter VoltageS C I S E N E R G Y (m J )1.25V C E , C O L L E C T O R T O E M I T T E R V O L T A G E (V )−0.51.50.251.00.01.752.00.75064281357V CE , COLLECTOR TO EMITTER VOLTAGE (V)40102I C , C O L L E C T O R C U R R E N T (A )6020305081357V CE , COLLECTOR TO EMITTER VOLTAGE (V)064TYPICAL ELECTRICAL CHARACTERISTICSG A T E T H R E S H O L D V O L T A G E (V )Figure 11. Resistive Switching Fall Time vs.TemperatureFigure 12. Inductive Switching Fall Time vs.TemperatureT J , JUNCTION TEMPERATURE (°C)I C , C O L L E C T O R C U R R E N T (A )T J , JUNCTION TEMPERATURE (°C)S W I T C H I N G T I M E (m s )10010.01R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W a t t )0.1100.0000010.0010.00010.110.010.01t,TIME (S)R q J C (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W a t t )10.1Figure 14. Best Case Transient Thermal Resistance(Non −normalized Junction −to −Case Mounted on Cold Plate)0.00001PACKAGE DIMENSIONSD2PAK 3CASE 418B−04ISSUE JǓǒmminches*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BFP450GEG中文资料

NPN Silicon RF Transistor• For medium power amplifiers• Compression point P-1dB = +19 dBm at 1.8 GHzmaximum available gain G ma = 15.5 dB at 1.8 GHzNoise figure F = 1.25 dB at 1.8 GHz• Transition frequency f T = 24 GHz• Gold metallization for high reliability• SIEGET 25 GHz f T - Line• Pb-free (RoHS compliant) package1)•Qualified according AEC Q101ESD (E lectro s tatic d ischarge) sensitive device, observe handling precaution!Type Marking Pin Configuration Package BFP450ANs1=B2=E3=C4=E--SOT343 Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage T A > 0 °CT A≤ 0 °C V CEO4.54.1VCollector-emitter voltage V CES15Collector-base voltage V CBO15Emitter-base voltage V EBO 1.5Collector current I C100mA Base current I B10Total power dissipation2)T S≤ 96 °CP tot450mWJunction temperature T j150°C Ambient temperature T A-65 (150)Storage temperature T stg-65 (150)1Pb-containing package may be available upon special request2T S is measured on the collector lead at the soldering point to the pcbThermal ResistanceParameter Symbol Value Unit Junction - soldering point1)R thJS≤ 120K/WElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.DC CharacteristicsV(BR)CEO 4.55-V Collector-emitter breakdown voltageI C = 1 mA, I B = 0I CES--10µA Collector-emitter cutoff currentV CE = 15 V, V BE = 0Collector-base cutoff currentI CBO--100nA V CB = 5 V, I E = 0I EBO--10µA Emitter-base cutoff currentV EB = 0.5 V, I C = 0DC current gainh FE6095130-I C = 50 mA, V CE = 4 V, pulse measured1For calculation of R thJA please refer to Application Note Thermal ResistanceElectrical Characteristics at T A = 25°C, unless otherwise specifiedParameter Symbol Values Unitmin.typ.max.AC Characteristics (verified by random sampling)f T1824-GHz Transition frequencyI C = 90 mA, V CE = 3 V, f = 1 GHzC cb-0.480.8pF Collector-base capacitanceV CB = 2 V, f = 1 MHz, V BE = 0 ,emitter groundedC ce- 1.2-Collector emitter capacitanceV CE = 2 V, f = 1 MHz, V BE = 0 ,base greundedC eb- 1.75-Emitter-base capacitanceV EB = 0.5 V, f = 1 MHz, V CB = 0 ,collector groundedF- 1.25-dB Noise figureI C = 10 mA, V CE = 2 V, f = 1.8 GHz, Z S = Z SoptG ma-15.5-Power gain, maximum available1)I C = 50 mA, V CE = 2 V, Z S = Z Sopt, Z L = Z Lopt,f = 1.8 GHz|S21|2811.5-dB Insertion power gainV CE = 2 V, I C = 50 mA, f = 1.8 GHz,Z S = Z L = 50 ΩIP3-29-dBm Third order intercept point at output2)V CE = 3 V, I C = 50 mA, f = 1.8 GHz,Z S = Z L = 50 Ω1dB Compression point at outputP-1dB-19-I C = 50 mA, V CE = 3 V, Z S = Z L = 50 Ω,f = 1.8 GHz1G ma = |S21e / S12e| (k-(k²-1)1/2)2IP3 value depends on termination of all intermodulation frequency components.Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHzSPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data:IS =0.13125fA VAF =24.165V NE = 1.5563-VAR =13.461V NC =0.70543-RBM = 2.1659ΩCJE = 3.2276fF TF =7.5068ps ITF =0.017655mA VJC = 1.1487V TR = 2.6912ns MJS =0-XTI =3-BF =76.123-IKF =0.58905ABR =21.254-IKR =0.25878ARB = 5.403ΩRE =0.45346-VJE =0.95292VXTF =0.69972-PTF =0degMJC =0.50644-CJS =0FXTB =0-FC =0.91274NF =0.79652-ISE =28341fANR = 1.2966-ISC =0.012292fAIRB =0.013181mARC =0.50084ΩMJE =0.48672-VTF =0.66148VCJC =1049.5fFXCJC =0.28285-VJS =0.75VEG = 1.11eVTNOM300KC`-E`-dioden Data (Berkley-Spice 1G.6 Syntax): IS = 25 fA; N = 1.05 -, RS = 5 ΩAll parameters are ready to use, no scalling is necessary. Package Equivalent Circuit:L BI =0.31nHL BO =0.63nHL EI=0.2nHL EO =0.05nHL CI =0.29nHL CO =0.68nHC BE =208fFC CB = 3.2fFC CE =213fFValid up to 6GHzThe SOT343 package has two emitter leads. To avoid high complexity to the package equivalentcircuit both leads are combined in one electrical connectionExtracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST)For examples and ready to use parameters please contact your local Infineon Technologies distributoror sales office to obtain a InfineonTechnologies CD-ROM or see Internet: http///silicondiscretesFor non-linear simulation:· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.· If you need simulation of the reverse characteristics, add the diode with theC'-E'- diode data between collector and emitter.· Simulation of package is not necessary for frequencies < 100MHz.For higher frequencies add the wiring of package equivalent circuit around thenon-linear transistor and diode model.Note:· This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does noteffect normal operation.Transistor Schematic DiagramThe common emitter configuration shows the following advantages:· Higher gain because of lower emitter inductance.· Power is dissipated via the grounded emitter leads, because the chip is mountedon copper emitter leadframe.Please note, that the broadest lead is the emitter lead.Common Emitter S- and Noise-parameterFor detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application NotesCD-ROM or see Internet: /silicondiscretesTotal power dissipation P tot = ƒ(T S )Permissible Pulse Load R thJS = ƒ(t p )10 10 10 K/WR t h JSPermissible Pulse Load P totmax /P totDC = ƒ(t p )P t o t m a x /P t o t DCCollector-base capacitance C cb = ƒ(V CB )f = 1MHzC c bTransition frequency f T= ƒ(I C) f = 1 GHzV CE = parameter in VGHz28fTPower gainG ma, G ms, |S21|2 = ƒ(f)V CE = 2 V, I C = 50 mAGPower gain Gma, G ms = ƒ (I C)V CE = 2Vf = parameter in GHzGPower gain G ma, G ms = ƒ (V CE)I C = 50 mAf = parameter in GHzGNoise figure F = ƒ(I C) V CE = 2 V, Z S = Z SoptFNoise figure F = ƒ(I C)V CE= 2 V, f = 1.8 GHzFNoise figureF = ƒ(f)VCE = 2 V, Z S = Z SoptFSource impedance for min.noise figure vs. frequencyV CE = 2 V, I C = 10mA / 50 mA+j50-j50Edition 2006-02-01Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2007.All Rights Reserved.Attention please!The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearestInfineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure ofsuch components can reasonably be expected to cause the failure of thatlife-support device or system, or to affect the safety or effectiveness of thatdevice or system.Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other personsmay be endangered.。

JIS G4305-2005 中文版冷轧不锈钢板材、薄板和带材

实用文档日本工业规格JIS冷轧不锈钢钢板和钢带G 4305 : 2005引言此日本工业标准对冷轧不锈钢板和薄板，以及冷轧不锈钢带作了具体说明。

本标准关于尺寸公差的部分是以 2002 年发布的第二版 ISO 9445 连续冷轧不锈钢窄钢带、宽钢带、钢板/薄板和定尺剪切的尺寸和形状为基础，并对厚度和宽度公差的条款作了一些修改。

有边线或点状下划线的部分是原国际标准已作了修改的内容。

修改一览表以及说明见附件 2（资料提供）。

1 范围本标准对冷轧不锈钢板和薄板（以下称钢板）及冷轧不锈钢带（以下称钢带）作了具体说明。

备注：以下是与本标准对应的国际标准。

此外，按照 ISO/IEC 指导原则 21，表示有关的国际标准和 JIS 之间内容对应程度的代号为 IDI（完全相同的），MOD（修改）和 NEQ（不相同）。

ISO9445：2002 版连续冷轧不锈钢窄带、宽带、板/薄板和定尺剪切的尺寸和形状公差（MOD）2 引用标准附表 1 所列标准包含的条款，经本标准直接引用，成为本标准制定的条款。

应该使用所列标准的最新版本（包括修改）。

3 钢种及牌号钢板和钢带将分成 61 个品种，其牌号及分类如表 1 所示。

4 化学成分4.1 熔炼分析值钢板及钢带按 11.1 条进行试验，其熔炼分析值应按表2~6。

4.2 产品分析值如订购者要求钢板和钢带的产品分析值，应按 11.1 条进行产品分析试验，其数值允许变动的范围，应按 JIS G0321 中表 5 的规定。

然而，表中未曾规定的元素值，应由供需双方协定。

5 机械性能钢板及钢带应按11.2 条进行试验，其机械性能应符合如下所列。

但厚度小于0.30 mm 的钢板及钢带，可省略拉力试验。

5.1 奥氏体钢的机械性能a）奥氏体钢的机械性能应按表 7。

这样的话，试样应相当于 JIS G0404 的 A 级。

屈服实用文档强度仅在订购者特别指定时适用。

b）为使之硬化而进行调质轧制的SUS301 和SUS301L 钢板及钢带的屈服强度、抗拉强度及延伸率按表 8。

HD14044B中文资料

Hitachi CodeJEDECEIAJWeight (reference value)DP-16ConformsConforms1.07 gUnit: mmCautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

AD5554BRS中文资料

Symbol N INL DNL IOUTX IOUTX GFSE TCVFS RFBX VREFX RREFX RREFX CREFX IOUTX COUTX VIL VIH IIL CIL VOL VOH tCH tCL tCSS tCSH tPD tLDAC tDS tDH tLDS tLDH VDD RANGE IDD ISS PDISS PSS
元器件交易网
a
FEATURES AD5544 16-Bit Resolution AD5554 14-Bit Resolution 2 mA Full-Scale Current ؎ 20%, with VREF = ؎ 10 V 2 ␮s Settling Time V SS BIAS for Zero-Scale Error Reduction @ Temp Midscale or Zero-Scale Reset Four Separate 4Q Multiplying Reference Inputs SPI-Compatible 3-Wire Interface Double Buffered Registers Enable Simultaneous Multichannel Change Internal Power ON Reset Compact SSOP-28 Package APPLICATIONS Automatic Test Equipment Instrumentation Digitally-Controlled Calibration
Quad, Current-Output Serial-Input, 16-Bit/14-Bit DACs AD5544/AD5554
FUNCTIONAL BLOCK DIAGRAM

TDA7564BH中文资料

5.1 Faults availability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
14.4V, 1KHz, 10% THD, 4x50W max, power ■ Max. output power 4x72W/2Ω ■ Full I2C bus driving:
– St-by – Independent front/rear soft play/mute – Selectable gain (for low noise line output
4.2 Permanent diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.3 Output DC offset detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4
Diagnostics functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.1 Turn-on diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

NCP5104PG资料

NCP5104High Voltage, Half Bridge DriverThe NCP5104 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. It uses the bootstrap technique to insure a proper drive of the High-side power switch. Features•ăHigh V oltage Range: up to 600 V•ădV/dt Immunity ±50 V/nsec•ăGate Drive Supply Range from 10 V to 20 V•ăHigh and Low Drive Outputs•ăOutput Source / Sink Current Capability 250 mA / 500 mA •ă3.3 V and 5 V Input Logic Compatible•ăUp to V CC Swing on Input Pins•ăExtended Allowable Negative Bridge Pin Voltage Swing to -10 V for Signal Propagation•ăMatched Propagation Delays between Both Channels•ă1 Input with Internal Fixed Dead Time (520 ns)•ăUnder V CC LockOut (UVLO) for Both Channels•ăPin to Pin Compatible with Industry Standards•ăThese are Pb-Free DevicesTypical Applications•ăHalf-Bridge Power ConvertersSOIC-8D SUFFIXCASE 751MARKINGDIAGRAMSNCP5104= Specific Device CodeA= Assembly LocationL or WL= Wafer LotY or YY= YearW or WW= Work WeekG or G= Pb-Free PackagePDIP-8P SUFFIXCASE 626NCP5104AWLGYYWWPINOUT INFORMATION8 Pin Package23417658SDINVCCGNDVBOOTDRV_HIBRIDGEDRV_LODevice Package Shipping†ORDERING INFORMATIONNCP5104PG PDIP-8(Pb-Free)50 Units / Rail†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specification Brochure, BRD8011/D.NCP5104DR2G SOIC-8(Pb-Free)2500 / T ape & ReelFigure 1. Typical Application Resonant Converter (LLC type)Figure 2. Typical Application Half Bridge ConverterFigure 3. Detailed Block DiagramPIN DESCRIPTIONPin Name DescriptionV CC Low Side and Main Power SupplyIN Logic InputSD Logic Input for ShutdownGND GroundDRV_LO Low Side Gate Drive OutputV BOOT Bootstrap Power SupplyDRV_HI High Side Gate Drive OutputBRIDGE Bootstrap Return or High Side Floating Supply ReturnMAXIMUM RATINGSRating Symbol Value Unit V CC Main power supply voltage-0.3 to 20VV CC_transient Main transient power supply voltage:ąIV CC_max = 5 mA during 10 ms23V V BOOT VHV: High Voltage BOOT Pin-1 to 620V V BRIDGE VHV: High Voltage BRIDGE pin-1 to 600V V BRIDGE Allowable Negative Bridge Pin Voltage for IN Signal Propagation to DRV_LO-10V V BOOT-V BRIDGE VHV: Floating supply voltage-0.3 to 20V V DRV_HI VHV: High side output voltage V BRIDGE - 0.3 toV BOOT + 0.3V V DRV_LO Low side output voltage-0.3 to V CC + 0.3V dV BRIDGE/dt Allowable output slew rate50V/ns V IN, V SD Inputs IN & SD-1.0 to V CC + 0.3V ESD Capability:- HBM model (all pins except pins 6-7-8 in 8) - Machine model (all pins except pins 6-7-8)2200kVVLatch up capability per JEDEC JESD78R q JA Power dissipation and Thermal characteristicsPDIP-8: Thermal Resistance, Junction-to-Air SO-8: Thermal Resistance, Junction-to-Air 100178°C/WT J_max Maximum Operating Junction T emperature+150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.ELECTRICAL CHARACTERISTIC (V CC = V boot = 15 V, V GND = V bridge, -40°C < T J < 125°C, Outputs loaded with 1 nF)Rating SymbolT J -40°C to 125°CUnits Min Typ MaxOUTPUT SECTIONOutput high short circuit pulsed current V DRV= 0 V, PW v 10 m s (Note 1)I DRVsource-250-mA Output low short circuit pulsed current V DRV= Vcc, PW v 10 m s (Note 1)I DRVsink-500-mA Output resistor (Typical value @ 25°C) Source R OH-3060W Output resistor (Typical value @ 25°C) Sink R OL-1020W High level output voltage, V BIAS-V DRV_XX @ I DRV_XX = 20 mA V DRV_H-0.7 1.6V Low level output voltage V DRV_XX @ I DRV_XX = 20 mA V DRV_L-0.20.6V DYNAMIC OUTPUT SECTIONTurn-on propagation delay (Vbridge = 0 V) (Note 2)t ON-620800ns Turn-off propagation delay (Vbridge = 0 V or 50 V) (Note 3)t OFF-100170ns Shutdown propagation delay, when Shutdown is enabled t sd_en-100170ns Shutdown propagation delay, when Shutdown is disabled t sd_dis-620800ns Output voltage rise time (from 10% to 90% @ V CC = 15 V) with 1 nF load t r-85160ns Output voltage fall time (from 90% to 10% @ V CC = 15 V) with 1 nF load t f-3575ns Propagation delay matching between the High side and the Low side@ 25°C (Note 4)D t-1045ns Internal fixed dead time (Note 5)DT400520650ns INPUT SECTIONLow level input voltage threshold V IN--0.8V Input pull-down resistor (V IN < 0.5 V)R IN-200-k W High level input voltage threshold V IN 2.3--V Logic “1” input bias current @ V IN = 5 V @ 25°C I IN+-525m A Logic “0” input bias current @ V IN = 0 V @ 25°C I IN--- 2.0m A SUPPL Y SECTIONVcc UV Start-up voltage threshold Vcc_stup8.08.99.8V Vcc UV Shut-down voltage threshold Vcc_shtdwn7.38.29.0V Hysteresis on Vcc Vcc_hyst0.30.7-V Vboot Start-up voltage threshold reference to bridge pin(Vboot_stup = Vboot - Vbridge)Vboot_stup8.08.99.8V Vboot UV Shut-down voltage threshold Vboot_shtdwn7.38.29.0V Hysteresis on Vboot Vboot_shtdwn0.30.7-VLeakage current on high voltage pins to GND(V BOOT= V BRIDGE= DRV_HI = 600 V)I HV_LEAK-540m AConsumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load onboth driver outputs)ICC1-45mA Consumption in inhibition mode (Vcc = Vboot)ICC2-250400m A Vcc current consumption in inhibition mode ICC3-200-m A Vboot current consumption in inhibition mode ICC4-50-m A1.Parameter guaranteed by design.2.T ON = T OFF + DT3.Turn-off propagation delay @ Vbridge = 600 V is guaranteed by design.4.See characterization curve for D t parameters variation on the full range temperature.5.Timing diagram definition see: Figure 4, Figure 5 and Figure6.Figure 4. Input/Output Timing DiagramINDRV_HIDRV_LOSDNote: DRV_HI output is in phase with the inputFigure 5. Timing DefinitionsFigure 6. Matching Propagation Delay DefinitionFigure 7. Shutdown Waveform Definition400450500550650700750800101214161820V CC , VOLTAGE (V)T O N , P R O P A G A T I O N D E L A Y (n s )Figure 8. Turn ON Propagation Delay vs.Supply Voltage (V CC = V BOOT )-40-2020406080100120TEMPERA TURE (°C)T O N , P R O P A G A T I O N D E L A Y (n s )Figure 9. Turn ON Propagation Delay vs.Temperature020406080100140160101214161820V CC , VOLTAGE (V)T O F F , P R O P A G A T I O N D E L A Y (n s )Figure 10. Turn OFF Propagation Delay vs.Supply Voltage (V CC = V BOOT )-40-20020406080100120TEMPERA TURE (°C)T O F F , P R O P A G A T I O N D E L A Y (n s )Figure 11. Turn OFF Propagation Delay vs.Temperature01002003004005006008001020304050V BRIDGE VOLTAGE (V)T O N , P R O P A G A T I O N D E L A Y (n s )Figure 12. High Side Turn ON Propagation Delay vs. V BRIDGE Voltage (V CC = V BOOT )02040608010012014016001020304050V BRIDGE VOLTAGE (V)T O F F , P R O P A G A T I O N D E L A Y (n s )Figure 13. High Side Turn OFF Propagation Delay vs. V BRIDGE Voltage (V CC = V BOOT )600120700101214161820V CC , VOLTAGE (V)T O N , R I S E T I M E (n s )Figure 14. Turn ON Risetime vs. SupplyVoltage (V CC = V BOOT )020406080100120160-40-2020406080100120TEMPERA TURE (°C)T O N , R I S E T I M E (n s )Figure 15. Turn ON Risetime vs. Temperature101214161820T O F F , F A L L T I M E (n s )V CC , VOLTAGE (V)Figure 16. Turn OFF Falltime vs. SupplyVoltage (V CC = V BOOT )010********-40-20020406080100120T O F F , F A L L T I M E (n s )TEMPERA TURE (°C)Figure 17. Turn OFF Falltime vs. Temperature-40-2020406080100120P R O P A G A T I O N D E L A Y M A T C H I N G (n s )TEMPERA TURE (°C)Figure 18. Propagation Delay Matching Between High Side and Low Side Driver vs.Temperature60140400450600-40-20020406080100120D E A D T I M E (n s )TEMPERA TURE (°C)Figure 19. Dead Time vs. Temperature50055000.20.40.60.81.01.21.6-40-2020406080100120L O W L E V E L I N P U T V O L T A G E T H R E S H O L D (V )TEMPERA TURE (°C)Figure 20. Low Level Input Voltage Thresholdvs. Supply Voltage (V CC = V BOOT )00.51.01.52.02.5101214161820H I G H L E V E L I N P U T V O L T A G E T H R E S H O L D (V )V CC , VOLTAGE (V)Figure 21. Low Level Input Voltage Thresholdvs. Temperature00.51.01.52.02.5-40-20020406080100120H I G H L E V E L I N P U T V O L T A G E T H R E S H O L D (V )TEMPERA TURE (°C)Figure 22. High Level Input Voltage Thresholdvs. Supply Voltage (V CC = V BOOT )00.51.01.52.02.53.03.54.0101214161820L O G I C “0” I N P U T C U R R E N T (m A )V CC , VOLTAGE (V)Figure 23. High Level Input Voltage Thresholdvs. Temperature2.04.06.08.010-40-20020406080100120L O G I C “0” I N P U T C U R R E N T (m A )TEMPERA TURE (°C)Figure 24. Logic “0” Input Current vs. SupplyVoltage (V CC = V BOOT )Figure 25. Logic “0” Input Current vs.Temperature0.20.40.60.81.01.21.4101214161820L O W L E V E L I N P U T V O L T A G E T H R E S H O L D (V )V CC , VOLTAGE (V)1.402.04.06.08.010-40-20020406080100120L O G I C “1” I N P U T C U R R E N T (m A )TEMPERA TURE (°C)Figure 26. Logic “1” Input Current vs. SupplyVoltage (V CC = V BOOT )00.20.40.60.81.0101214161820L O W L E V E L O U T P U T V O L T A G E T H R E S H O L D (V )V CC , VOLTAGE (V)Figure 27. Logic “1” Input Current vs.Temperature00.20.40.60.81.0-40-20020406080100120L O W L E V E L O U T P U T V O L T A G E (V )TEMPERA TURE (°C)Figure 28. Low Level Output Voltage vs.Supply Voltage (V CC = V BOOT )00.40.81.21.6101214161820H I G H L E V E L O U T P U T V O L T A G E T H R E S H O L D (V )V CC , VOLTAGE (V)Figure 29. Low Level Output Voltage vs.Temperature00.40.60.81.0-40-20020406080100120H I G H L E V E L O U T P U T V O L T A G E (V )TEMPERA TURE (°C)Figure 30. High Level Output Voltage vs.Supply Voltage (V CC = V BOOT )Figure 31. High Level Output Voltage vs.Temperature012345678101214161820L O G I C “1” I N P U T C U R R E N T (m A )V CC , VOLTAGE (V)0.2O U T P U T S O U R C E C U R R E N T (m A )TEMPERA TURE (°C)Figure 32. Output Source Current vs. SupplyVoltage (V CC = V BOOT )50100150200250300350400-40-2020406080100120101214161820O U T P U T S I N K C U R R E N T (m A )V CC , VOLTAGE (V)Figure 33. Output Source Current vs.Temperature100200300400500600-40-20020406080100120O U T P U T S I N K C U R R E N T (m A )TEMPERA TURE (°C)Figure 34. Output Sink Current vs. SupplyVoltage (V CC = V BOOT )00.040.080.120.160.200100200300400500600H I G H S I D E L E A K A G E C U R R E N T O N H V P I N S T O G N D (m A )HV PINS VOLTAGE (V)Figure 35. Output Sink Current vs.Temperature5.0101520-40-20020406080100120L E A K A G E C U R R E N T O N H I G H V O L T A G E P I N S (600 V ) t o G N D (m A )TEMPERA TURE (°C)Figure 36. Leakage Current on High Voltage Pins (600 V) to Ground vs. V BRIDGE Voltage(V BRIDGE = V BOOT = V DRV_HI )Figure 37. Leakage Current on High Voltage Pins (600 V) to Ground vs. Temperature (V BRIDGE = V BOOT = V DRv_HI = 600 V)050101214161820O U T P U T S O U R C E C U R R E N T (m A )V CC , VOLTAGE (V)0.020.060.100.140.18020406080100-40-20020406080100120V B O O T C U R R E N T S U P P L Y (m A )TEMPERA TURE (°C)Figure 38. V BOOT Supply Current vs. BootstrapSupply Voltage (V CC = V BOOT )0408012016020024004.08.0121620V C C S U P P L Y C U R R E N T (m A )V CC , VOLTAGE (V)Figure 39. V BOOT Supply Current vs.Temperature0100200300400-40-20020406080100120V C C C U R R E N T S U P P L Y (m A )TEMPERA TURE (°C)Figure 40. V CC Supply Current vs. V CC SupplyVoltage (V CC = V BOOT )8.08.28.48.68.89.09.29.49.69.810-40-20020406080100120U V L O S T A R T U P V O L T A G E (V )TEMPERA TURE (°C)Figure 41. V CC Supply Current vs. Temperature7.07.27.47.67.88.08.28.48.68.89.0-40-20020406080100120U V L O S H U T D O W N V O L T A G E (V )TEMPERA TURE (°C)Figure 42. UVLO Startup Voltage vs.Temperature Figure 43. UVLO Shutdown Voltage vs.Temperature2040608010004.08.0121620V B O O T S U P P L Y C U R R E N T (m A )V BOOT , VOLTAGE (V)50150250350100200300400500600ICC+IBOOTCURRENTSUPPLY(mA)SWITCHING FREQUENCY (kHz) Figure 44. I CC1 Consumption vs. SwitchingFrequency with 15 nC Load on Each Driver @V CC = 15 V0100200300400500600ICC+IBOOTCURRENTSUPPLY(mA)SWITCHING FREQUENCY (kHz)Figure 45. I CC1 Consumption vs. SwitchingFrequency with 33 nC Load on Each Driver @V CC = 15 V1030406070800100200300400500600ICC+IBOOTCURRENTSUPPLY(mA)SWITCHING FREQUENCY (kHz) Figure 46. I CC1 Consumption vs. SwitchingFrequency with 50 nC Load on Each Driver @V CC = 15 VFigure 47. I CC1 Consumption vs. SwitchingFrequency with 100 nC Load on Each Driver @V CC = 15 V 05.0101520250100200300400500600ICC+IBOOTCURRENTSUPPLY(mA)SWITCHING FREQUENCY (kHz)5020SOIC-8 NB CASE 751-07ISSUE AJNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 (0.006)PER SIDE.5.DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.6.751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07.DIMA MIN MAX MIN MAXINCHES4.805.000.1890.197MILLIMETERS B 3.80 4.000.1500.157C 1.35 1.750.0530.069D 0.330.510.0130.020G 1.27 BSC 0.050 BSC H 0.100.250.0040.010J 0.190.250.0070.010K 0.40 1.270.0160.050M 0 8 0 8 N 0.250.500.0100.020S5.806.200.2280.244MYM0.25 (0.010)YM0.25 (0.010)Z SXS____0.60.024ǒmm inchesǓSCALE 6:1*For additional information on our Pb-Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.2.PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS).3.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.DIM MIN MAX MIN MAX INCHESMILLIMETERS A 9.4010.160.3700.400B 6.10 6.600.2400.260C 3.94 4.450.1550.175D 0.380.510.0150.020F 1.02 1.780.0400.070G 2.54 BSC 0.100 BSC H 0.76 1.270.0300.050J 0.200.300.0080.012K 2.92 3.430.1150.135L 7.62 BSC 0.300 BSC M ---10 ---10 N0.76 1.010.0300.040__8 LEAD PDIP CASE 626-05ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

BAT54C-V-GS08;中文规格书,Datasheet资料

BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors1For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Small Signal Schottky Diodes, Single and DualFeatures•These diodes feature very low turn-on voltage and fast switching •These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges•AEC-Q101 qualified•Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECMechanical DataCase: SOT-23Weight: approx. 8.1 mg Packaging codes/options:18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedNote 1)Device on fiberglass substrate, see layout on next page.Thermal CharacteristicsT amb = 25°C, unless otherwise specifiedNote1) Device on fiberglass substrate, see layout on next page.** Please see document “V ishay Material Category Policy”: /doc?99902PartOrdering codeT ype markingRemarks BAT54-V -G BA T54-V -G-18 or BAT54-V -G-08L8Tape and reel BAT54A-V -G BAT54A-V -G-18 or BAT54A-V -G-08L46Tape and reel BAT54C-V -G BAT54C-V -G-18 or BAT54C-V -G-08L47Tape and reel BAT54S-V -GBAT54S-V -G-18 or BAT54S-V -G-08L48Tape and reelParameterT est conditionSymbol V alue Unit Repetitive peak reverse voltage V RRM 30V Forward continuous current I F 200 1)mA Repetitive peak forward current I FRM 300 1)mA Surge forward current current t p < 1 s I FSM 600 1)mA Power dissipationP tot230mWParameterTest conditionSymbol V alue Unit Thermal resistance junction to ambient air R thJA 430 1)K/W Junction temperature T j 125°C Storage temperature rangeT stg- 65 to + 150°C 2Document Number 83344Rev. 1.0, 28-Jun-10BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GVishay Semiconductors For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedLayout for R thJA testThickness:Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)Typical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest condition Symbol Min.Typ.Max.Unit Reverse Breakdown voltage I R = 100 µA (pulsed)V (BR)30V Leakage currentPulse test t p < 300 µs, δ < 2 % atV R = 25 V I R 2µA Forward voltageI F = 0.1 mA, t p < 300 µs, δ < 2 %V F 240m V I F = 1 mA, t p < 300 µs, δ < 2 %V F 320m V I F = 10 mA, t p < 300 µs, δ < 2 %V F 400m V I F = 30 mA, t p < 300 µs, δ < 2 %V F 500m V I F = 100 mA, t p < 300 µs, δ < 2 %V F 800m V Diode capacitance V R = 1 V , f = 1 MHz C D 10pF Reverse recovery timeI F = 10 mA to I R = 10 mA,i R = 1 mA, R L = 100 Ωt rr5nsFigure 1. Typical Forward V oltage Forward Current vs.V arious TemperaturesFigure 2. Diode Capacitance vs. Reverse V oltage V RBAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors3For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Package Dimensions in millimeters (inches): SOT-23Figure 3. Typical V ariation of Reverse Currentvs. V arious TemperaturesLegal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTOR BAT54C-V-GS08。

BPG400 真空规管中文手册

IR 090热阴极电离复合真空计使用说明书BG 804 171 BE目录产品标识有效范围使用范围工作原理注册商标1 安全1.1 使用符号1.2 人员素质1.3 一般安全规则1.4 赔偿责任与保修2 技术参数3 安装3.1 真空连接3.1.1 拆卸和安装电子学单元3.1.2 安装延伸件3.2 电源连接3.2.1 与COMBIV AC IT23一起使用3.2.2 与其它测量仪器一起使用4 运行4.1 测量原理，测量特性4.2 真空计工作原理4.3 除气4.4 显示器4.5 RS232C接口4.5.1 功能说明4.5.1.1 IR090输出4.5.1.2 IR090输入5 维护5.1 维护5.2 真空计调整5.3 真空计清洗5.4 安装障板5.5 更换障板5.6 更换规管5.7 故障查找6 拆卸7 产品返修8 附件9 备件10 废物处理附录A. 测量讯号与压强的关系B. 气体种类与压强的关系污染申报表参阅本说明书中的章节，采用符号（→XY）。

参阅其它文献，采用符号（→［Z］）。

产品标识与Leybold Inficon联系时，请标明产品标牌上给出的信息。

将信息复制在标牌的复印件上。

有效范围本说明书适用于下列件号的产品不带显示器120 90 （法兰DN 25 ISO-KF）120 92 （法兰DN 40 CF-R）带显示器120 91 （法兰DN 25 ISO-KF）120 94 （法兰DN 40 CF-R）产品的件号在标牌上标明。

本公司保留对说明书不预先通知的技术更改权。

使用范围I R090用于在压强5×10-10…1000毫巴范围内非易燃性气体和气体混合物的真空测量。

真空计规管是SKY Smart真空计规管系列的一个组成部分。

可与COMBIV AC IT23或其它测量仪器一起工作。

工作原理在整个测量范围内，热阴极电离复合真空计有连续的测量特性。

它的测量讯号是对数压强输出。

真空计的功能包括BA规热阴极电离测量系统（用于p＜2.0×10-2毫巴）和皮拉尼测量系统（用于p＞5.5×10-3毫巴）。

W04G;W005G;W01G;W02G;W08G;中文规格书,Datasheet资料

e 3W005G - W10G1.5A GLASS PASSIVATED BRIDGE RECTIFIERFeaturesMaximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specifiedMechanical DataSingle phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.Notes: 1. Thermal resistance from junction to case mounted on PC board with 13 x 13mm (0.03mm thick) land areas. 2. Per element, measured at 1.0MHz and applied reverse voltage of 4.0V DC.3. EC Directive 2002/95/EC(RoHS) revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive AnnexNotes 5 and 7.·Glass Passivated Die Construction·Low Forward Voltage Drop, High Current Capability ·Surge Overload Rating to 50A Peak ·Ideal for Printed Circuit Boards·Case to Terminal Isolation Voltage 1500V ·UL Listed Under Recognized Component Index, File Number E94661·Lead Free Finish, RoHS Compliant (DC 514+) (Note 3)·Case: WOG·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C·Terminals: Finish ¾ Silver. Plated Leads Solderable per MIL-STD-202, Method 208·Polarity: As marked on Body ·Marking: Type Number·Weight: 1.3 grams (approximate)0.010.11.0100.20.6 1.0 1.4I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)FFig. 2 Typical Forward Characteristics1020304050110100I , P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60 HzFig. 3 Max Non-Repetitive Surge Current110100110100C , T O T A L C A P A C I T A N C E (p F )T V , REVERSE VOLTAGE (V)R Fig. 4 Typical Total Capacitance0.010.11.01010020004080160PERCENT OF RATED PEAK REVERSE VOLTAGE (%)Fig. 5 Typical Reverse Characteristics1200.51.01.50255010012515075I , A V E R A G E F O R W A R D C U R R E N T (A )F T, AMBIENT TEMPERATURE (°C)AFig. 1 Forward Current Derating CurveOrdering Information(Note 4)IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of thePresident of Diodes Incorporated.分销商库存信息:DIODESW04G W005G W01G W02G W08G W10G。

5B42中文资料

Isolated, Process Current Input5B42Rev. 0Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781.329.4700 Fax: 781.326.8703© 2004 Analog Devices, Inc. All rights reserved.FEATURESIsolated Current Input.Interfaces with two-wire transmitters, providing an isolated, regulated 20 V supply voltage.Measure process-current input signal of 4-20 mA . Generates an output of +1 to +5V or +2 to 10V.Module circuitry can withstand 240v rms at the input screw-terminals.All 5B42 series modules are mix-and-match and Hot Swappable.APPLICATIONSIndustrial signal conditioning Industrial signal isolation Industrial signal filteringPRODUCT OVERVIEWThe 5B Series represents an innovative generation of low cost, high performance plug-in signal conditioners. Designed for industrial applications, these modules incorporate highly reliable transformer-based isolation and automated surface-mount manufacturing technology. They are compact, economical components whose performance exceeds thatavailable from more expensive devices. Combining 1500 V rms continuous isolation, +0.05% calibrated accuracy, small size and low cost, the 5B Series is an attractive alternative to expensive signal conditioners and in-house designsAll modules are potted and identical in pin-out and size (2.27” x 2.32” x 0.595”). They can be mixed and matched, permitting users to address their exact needs, and may be “hot swapped without disturbing field wiring or power. The isolated input modules provide 0 to +5V or +5V outputs and accept J, K, T, E,R, S, N, or B type thermocouples.These modules feature complete signal conditioning functions including 240 V rms input protection, filtering, chopper stabilized low drift +1 uV/oC amplification, 1500 V rms isolation, and sensor excitation when required.All modules feature excellent common mode rejection and meet industrial transient surge withstand specifications.FUNCTIONAL BLOCK DIAGRAMFigure 1. 5B42 Functional Block DiagramThere are also a number of backplanes and mounting sockets which provide a complete signal conditioning solution for end users. Each backplane incorporates screw terminals for field wiring inputs and outputs and cold junction sensors for thermocouple applications.These signal conditioners are designed to provide an easy and convenient solution to signal conditioning problems of both designers and end users in measurement and control applications. Typical uses include microcomputer-based measurement systems, standard data acquisition systems, programmable controllers, analog recorders and dedicated control systems. The 5 B series modules are ideally suited to applications where monitoring and control of temperature, pressure, flow, rotation and other analog signals are required. The 5B Series modules and backplanes are approved by Factory Mutual (FM) and the 5B Series modules are approved by the Canadian Standards Association (CSA) for use in Class 1, Division 2, Groups A, B, C, and D locations. These approvals certify that the 5B Series is suitable for use in locations where a hazardous concentration of flammable gas may exist only under fault conditions of operation. Equipment of this category is called “nonincendive” and they need no special enclosures or other physical safeguards.The 5B series modules and backplanes have been tested and passed the stringent heavy industrial requirements of the European Union’s electromagnetic compatibility (ENC)directive – EN50082-1 and EN50081-2. When used according to installation directions (refer to 5B series User Manual), any errors caused by EMI/RFI interference will be less than 0.1% of the full scale 5B measurement range for field strengths up to 10 V/M and frequencies up to 1 GHz.5B42Rev. 0 | Page 2 of 8GENERAL DESCRIPTIONThe 5B42 is a single-channel signal conditioning module that interfaces with two-wire transmitters, providing an isolated, regulated 20V supply voltage. The module filters and amplifies the 4-to-20 mA process-current input to produce an accurately scaled, low-noise low-impedance output of +1 to +5 V or +2 to +10 V .True Three-Port Isolation – The floating, differential input circuit on the field side eliminates the need for any inputgrounding. Signal and power isolation by transformer coupling uses a proprietary modulation technique for linear, stable and reliable performance. A demodulator on the computer side of the signal transformer recovers the original signal, which is then filtered and buffered to provide a low-noise, low-impedance output signal. True three-port isolation (Input-Output-Power) includes common-mode ratings of 1500 V rms between input and output and input and power, 250V rms between power and output – no return path is required between the power and signal output commons.Accurate and Stable Performance – The 5B42 maintainsaccuracy over the wide operating temperature range of -40o C to +85o C through design for low parameter drift. This enables the module to provide output offset drift of only +5 uV/o C and gain drift of just +25 ppm/o CWhy an Internal Current Sense Resistor? – The 5B42 offers significant advantages over signal conditioners that require an external current sense resistor. First, an external resistor is not protected from accidental connection to a 240 V rms power line. Next, the external resistor tolerance must be added to the conditioners specified errors. In contrast, the 5B42 is calibrated and specified with its internal 25Ω sense resistor. Further, the 5B42 signal input, loop supply and the sense resistor are all protected against accidental application of excess voltages up to 240V rms. Finally, there is no need to install an external sense resistor on the backplane, but if one is installed it will not affect 5B42 performance.Filtering and Protection – The 5B42 contains an optimized five-pole low-pass filter with a -3 dB bandwidth at 100Hz that provides a low-overshoot step response and exceptionally low noise of 200 uV pk-pk in a 100kHz bandwidth. Attenuation (normal mode rejection) increases at a 90 dB/decade rate beyond 100 Hz.The module protects the computer side from damage due to field-side over-voltage faults. The module withstands 240 V rms at the input terminals without damage, thereby shielding the internal computer-side circuitry from field-side over-voltage conditions. In addition, the 5B42 is mix-and-match and hot-swappable with all other 5B Series modules, so can be inserted or removed from any socket in the same backplane without disrupting system power.A series output switch eliminates the need for externalmultiplexing in many applications. The switch is turned on by an active-low enable input. If the switch is to be on at all times, the enable-input should be grounded to power common as it is on the 5B01 and 5B08 backplanes....Figure 25B42Rev. 0 | Page 3 of 85B42 Models AvailableModelInput RangeOutput Range5B42-01 4 mA to 20 mA +1 V to +5 V 5B42-024 mA to 20 mA+2 V to +10 V5B42-Custom * ** Custom Input/Output ranges are available.5B42 Specifications(typical @ +25°C and V s = +5 V dc)Description Model 5B42Input RangesStandard Ranges 4 mA to 20 mA (Refer to Model Table) Custom Ranges0 mA to 20 mA (Refer to Ordering Section) Isolated Loop Supply Voltage 20 V @ 4 mA to 20 mA Input Output Ranges (R L > 50 k Ω)+1 V to +5 V; +2 V to +10 VAccuracy 1Initial @ +25°C±0.05% Span ±4 µA RTINonlinearity ±0.01% Span Input Offset vs. Temperature ±0.5 µV/°C Output Offset vs. Temperature ±5 µV/°CGain vs. Temperature ±0.0025% of Reading/°C Input Sense Resistor 225 Ω NoiseInput, 0.1 Hz to 10 Hz Bandwidth 10 nA rms Output, 100 kHz Bandwidth 200 µV peak-peak Bandwidth, -3 dB100 Hz Output Step Rise Time, 10% to 90% Span4 msCommon-Mode Voltage (CMV)Output-to-Input, Continuous 1500 V rms, maximum Input-to-Power, Continuous 1500 V rms, maximum Output-to-Power, Continuous 3250 V rms, maximumTransient ANSI/IEEE C37.90.1-1989Common Mode Rejection (CMR)1 k Ω Source Imbalance, 50/60 Hz 140 dBNormal Mode Rejection (NMR)-3 dB @ 100 Hz (90 dB per decade > 100 Hz)Input, Excitation, and Sense Resistor ProtectionContinuous240 V rms, maximumTransient ANSI/IEEE C37.90.1-19895B42Rev. 0 | Page 4 of 8Output Resistance 25 ΩVoltage Output Protection Continuous Short to Ground Output Current Limit ±20 mAOutput Selection Time6 µs to ±1 mV of V out @ C load = 0 to 2,000 pFOutput Enable Control 3Max Logic "0" +0.8 V Min Logic "1" +2.4 V Max Logic "1" +36 V Input Current "0", "1" 0.5 µA Power Supply Voltage+5 V dc ±5%Power Supply Current@ Transmitter Load of 20 mA 200 mA @ Transmitter Load of 4 mA 100 mA Power Supply Sensitivity, RTI ±1 µV/% of V sMechanical Dimensions2.275" x 2.375" x 0.595"(57.8 mm x 59.1 mm x 15.1 mm)Environmental Temperature RangeRated Performance -40°C to +85°C Operating -40°C to +85°C Storage -40°C to +85°CRelative Humidity 0 to 95% @ +60°C, non-condensing RFI Susceptibility±0.5% Span error @ 400 MHz, 5 Watt, 3 ft1Includes the combined effects of repeatability, hysteresis, and nonlinearity error. Loads heavier than 50 k Ω will degrade nonlinearity and gain temperature coefficient. 2A precision 25 Ω current-sense input resistor is internal to the 5B42 - refer to block diagram. 3The user's board layout must separate Power Common from Output Common. When the output switch is not used, connect the Enable Input to the Output Common. Output common is connected to power common when the 5B42 is installed on a 5B Series backplane. Specifications subject to change without notice.5B42Rev. 0 | Page 5 of 8PIN CONFIGURATIONS AND FUNCTIONAL DESCRIPTIONSFigure 3 5B42 Input Field ConnectionsTable 1. Pin Function Descriptions—Pin No.Description 3 +IN 4 +EXCFigure 4 . Model 5B Series Module, with pin-out assignments.ESD CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges.Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.5B42Rev. 0 | Page 6 of 8OUTLINE DIMENSIONSFigure 5. Outline Dimensions5B42 NOTESRev. 0 | Page 7 of 85B42Rev. 0 | Page 8 of 8NOTES© 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective companies. D00258-0-9/04(0)。

UC3842ANG4中文资料

UC1842A/3A/4A/5A UC2842A/3A/4A/5A UC3842A/3A/4A/5A•Optimized for Off-line and DC to DC Converters•Low Start Up Current (<0.5mA)•Trimmed Oscillator Discharge Current •Automatic Feed Forward Compensation •Pulse-by-Pulse Current Limiting•Enhanced Load Response Characteristics •Under-Voltage Lockout With Hysteresis •Double Pulse Suppression •High Current Totem Pole Output •Internally Trimmed Bandgap Reference •500kHz Operation •Low R O Error AmpCurrent Mode PWM ControllerThe UC1842A/3A/4A/5A family of control ICs is a pin for pin compati-ble improved version of the UC3842/3/4/5family.Providing the nec-essary features to control current mode switched mode power supplies,this family has the following improved features.Start up cur-rent is guaranteed to be less than 0.5mA.Oscillator discharge is trimmed to 8.3mA.During under voltage lockout,the output stage can sink at least 10mA at less than 1.2V for V CC over 5V .The difference between members of this family are shown in the table below.FEATURESDESCRIPTIONPart #UVLO On UVLO Off Maximum DutyCycleUC1842A 16.0V 10.0V <100%UC1843A 8.5V 7.9V <100%UC1844A 16.0V 10.0V <50%UC1845A8.5V7.9V<50%UC1842A/3A/4A/5A UC2842A/3A/4A/5AUC3842A/3A/4A/5ACONNECTION DIAGRAMSABSOLUTE MAXIMUM RATINGS (Note 1)Note 1.All voltages are with respect to Ground, Pin 5.Currents are positive into, negative out of the specified terminal.Consult Packaging Section of Databook for thermal limitations and con-siderations of packages.Pin numbers refer to DIL package only.Supply Voltage (Low Impedance Source). . . . . . . . . . . . . .30V Supply Voltage (I CC mA). . . . . . . . . . . . . . . . . . . .Self Limiting Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±1A Output Energy (Capacitive Load). . . . . . . . . . . . . . . . . . . . .5µJ Analog Inputs (Pins 2, 3). . . . . . . . . . . . . . . . . . .-0.3V to +6.3V Error Amp Output Sink Current . . . . . . . . . . . . . . . . . . . .10mA Power Dissipation at T A ≤25°C (DIL-8). . . . . . . . . . . . . . . .1W Storage Temperature Range. . . . . . . . . . . . . .-65°C to +150°C Lead Temperature (Soldering, 10 Seconds). . . . . . . . . .300°C N/C VREF VCC OUTPUT VCC GND 12345678161514131211N/C N/C N/CRT/CT N/C COMP VFB ISENSE PWRGND N/C109SOIC-WIDE16(TOP VIEW)DW PackagePARAMETERTEST CONDITIONSUC184xA\UC284xA UC384xAUNITSMIN.TYP.MAX.MIN.TYP.MAX.Reference Section Output Voltage T J = 25°C, I O = 1mA 4.955.00 5.05 4.905.00 5.10V Line Regulation 12≤V IN 25V 620620mV Load Regulation 1≤I O ≤20mA 625625mV Temp. Stability(Note 2, Note 7)0.20.40.20.4mV/°C Total Output Variation Line, Load, Temp. 4.95.14.825.18V Output Noise Voltage 10Hz ≤f ≤10kHz T J = 25°C (Note 2)5050µV Long Term Stability T A = 125°C, 1000Hrs. (Note 2)525525mV Output Short Circuit -30-100-180-30-100-180mA Oscillator Section Initial Accuracy T J = 25°C (Note 6)475257475257kHz Voltage Stability 12≤V CC ≤25V0.210.21%Temp. Stability T MIN ≤T A ≤T MAX (Note 2)55%AmplitudeV PIN 4peak to peak (Note 2) 1.7 1.7V Discharge Current T J = 25°C,V PIN 4= 2V (Note 8)7.88.38.87.88.38.8mA V PIN 4= 2V (Note 8)7.58.87.68.8mA Error Amp Section Input VoltageV PIN 1= 2.5V2.45 2.50 2.55 2.42 2.50 2.58V Input Bias Current -0.3-1-0.3-2µA A VOL2≤V O ≤4V65906590dB Unity Gain Bandwidth T J = 25°C (Note 2)0.710.71MHz PSRR12≤V CC ≤25V60706070dB Output Sink Current V PIN 2= 2.7V,V PIN 1= 1.1V 2626mA Output Source Current V PIN 2= 2.3V,V PIN 1= 5V-0.5-0.8-0.5-0.8mA V OUT High V PIN 2= 2.3V,R L = 15k to ground 5656V V OUT LowV PIN 2= 2.7V,R L = 15k to Pin 80.7 1.10.7 1.1V Current Sense Section Gain(Note 3, Note 4) 2.853 3.15 2.853 3.15V/V Maximum Input Signal V PIN 1= 5V (Note 3)0.91 1.10.91 1.1V PSRR12≤V CC ≤25V (Note 3)7070dB Input Bias Current -2-10-2-10µA Delay to Output V PIN 3= 0 to 2V (Note 2)150300150300ns Output Section Output Low Level I SINK = 20mA 0.10.40.10.4V I SINK = 200mA 15 2.215 2.2V Output High Level I SOURCE = 20mA 1313.51313.5V I SOURCE = 200mA1213.51213.5V Rise Time T J = 25°C, C L = 1nF (Note 2)5015050150ns Fall TimeT J = 25°C, C L = 1nF (Note 2)5015050150ns UVLO SaturationV CC = 5V,I SINK = 10mA0.71.20.71.2VELECTRICAL CHARACTERISTICS Unless otherwise stated,these specifications apply for –55°C ≤T A ≤125°C for theUC184xA;–40°C ≤T A ≤125°C for the UC284xAQ;–40°C ≤T A ≤85°C for the UC284xA;0≤T A ≤70°C for the UC384xA;V CC =15V (Note 5);R T =10k;C T =3.3nF;T A =T J ;Pin numbers refer to DIL-8.PARAMETERTEST CONDITIONSUC184xA\UC284xA UC384xAUNITSMIN.TYP.MAX.MIN.TYP.MAX.Under-Voltage Lockout Section Start Threshold x842A/4A 15161714.51617.5V x843A/5A 7.88.49.07.88.49.0V Min. Operation Voltage After x842A/4A 910118.51011.5V Turn On x843A/5A 7.07.68.27.07.68.2V PWM SectionMaximum Duty Cycle x842A/3A 94961009496100%x844A/5A474850474850%Minimum Duty Cycle 00%Total Standby Current Start-Up Current0.30.50.30.5mA Operating Supply Current V PIN 2=V PIN 3= 0V 11171117mA V CC Zener VoltageI CC = 25mA30343034VNote 2:Ensured by design, but not 100% production tested.Note 3:Parameter measured at trip point of latch with V PIN2= 0.Note 4:Gain defined as:A VPIN VPIN =∆∆13;0V PIN 30.8V .Note 5:Adjust V CC above the start threshold before setting at 15V .Note 6:Output frequency equals oscillator frequency for the UC1842A and UC1843A.Output frequency is one half oscillator fre-quency for the UC1844A and UC1845A.Note 7:“Temperature stability, sometimes referred to as average temperature coefficient, is described by the equation:Temp Stability VREF max VREF min TJ max TJ min =−−()()()().V REF (max) and V REF (min) are the maximum & minimum reference volt-age measured over the appropriate temperature range.Note that the extremes in voltage do not necessarily occur at the extremes in temperature.”Note 8:This parameter is measured with R T = 10k to V REF .This contributes approximately 300 A of current to the measurement.The total current flowing into the R T /C pin will be approximately 300 A higher than the measured value.ELECTRICAL CHARACTERISTICS Unless otherwise stated,these specifications apply for –55°C ≤T A ≤125°C for theUC184xA;–40°C ≤T A ≤125°C for the UC284xAQ;–40°C ≤T A ≤85°C for the UC284xA;0≤T A ≤70°C for the UC384xA;V CC =15V (Note 5);R T =10k;C T =3.3nF;T A =T J ;Pin numbers refer to DIL-8.Error Amplifier Open-Loop Frequency ResponseOutput Saturation CharacteristicsUC2842A/3A/4A/5AAPPLICATIONS DATA (cont.)UC2842A/3A/4A/5AUC3842A/3A/4A/5AAPPLICATIONS DATA (cont.)PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)5962-8670405PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670405VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670405VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670405XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670406PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670406VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670406VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670406XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670407PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670407VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670407VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670407XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670408PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670408VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670408VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670408XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1842AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1842AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1842AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1842AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1842ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1843AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1843AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1843AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1843AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1843ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1844AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1844AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1844AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1844AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1844ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1845AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1845AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1845AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1845AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1845ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC2842AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2842AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2842AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2842AD8TRG4ACTIVE SOIC D82500None Call TI Call TIUC2842ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2842ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAROrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC2842ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2842AJ OBSOLETE CDIP JG8None Call TI Call TIUC2842AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2843AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2843AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2843AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2843ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2843ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2843ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2843AJ OBSOLETE CDIP JG8None Call TI Call TIUC2843AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2843AQ ACTIVE PLCC FN2046None CU SNPB Level-2-220C-1YEAR UC2844AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2844AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2844AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2844AD8TRG4PREVIEW SOIC D82500None Call TI Call TIUC2844ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2844ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2844ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2844AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC2844AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2844AQD ACTIVE SOIC D1450None Call TI Level-1-220C-UNLIM UC2844AQD8ACTIVE SOIC D875None Call TI Level-1-220C-UNLIM UC2844AQD8R ACTIVE SOIC D82500None Call TI Level-1-220C-UNLIM UC2844AQDR ACTIVE SOIC D142500None Call TI Level-1-220C-UNLIM UC2845AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2845AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2845AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2845AD8TRG4PREVIEW SOIC D82500None Call TI Call TIUC2845ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2845ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2845AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3842AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3842AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3842AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3842ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3842ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3842ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3842AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC3842AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC3842ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NAUC3843AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3843AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3843AD8G4ACTIVE SOIC D875None Call TI Call TIUC3843AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3843AD8TRG4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMUC3843ADG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM UC3843ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3843AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3843AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCUC3843ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NA UC3844AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3844AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3844AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3844AD8TRG4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM UC3844ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3844ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3844ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3844AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3845AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3845AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3845AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3845ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3845ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3845ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3845AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3845AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCUC3845ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NA(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirementsfor all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.PACKAGE OPTION ADDENDUM 10-Mar-2005Addendum-Page 4元器件交易网。

EDE5104GBSA资料

Preliminary Data Sheet E0249E30 (Ver. 3.0)
2
EDE5104GBSA, EDE5108GBSA, EDE5116GBSA
Pin Configurations
/xxx indicates active low signal.
64-ball µBGA (×8, ×4 organization) 1 A NC B C D E VDD NU/ /RDQS VSS
PRELIMINARY DATA SHEET
512M bits DDR-II SDRAM
EDE5104GBSA (128M words × 4 bits) EDE5108GBSA (64M words × 8 bits) EDE5116GBSA (32M words × 16 bits)
Description
2 NC
3
7
DQ12 VSSQ DQ11 VDD NC VSSQ VSS LDM
DQ10 VSSQ DQ13 VSSQ /LDQS VDDQ LDQS VSSQ VDDQ DQ2 VSSDL /RAS /CAS A2 A6 A11 NC DQ0 VSSQ CK /CK /CS A0 A4 A8 NC VSS VDD DQ7 VDDQ DQ5 VDD ODT
Pin name ODT VDD VSS VDDQ VSSQ VREF VDDL VSSDL NC*1 NU*
2
Function ODT control Supply voltage for internal circuit Ground for internal circuit Supply voltage for DQ circuit Ground for DQ circuit Reference supply voltage Supply voltage for DLL circuit Ground for DLL circuit No connection Not usable

MBRS410LT3G;中文规格书,Datasheet资料

MBRS410LT3Preferred DeviceSurface MountSchottky Power RectifierThis device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical.Features•Ultra Low V F•1st in the Market Place with a 10 V R Schottky Rectifier •Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for Automated Handling•Highly Stable Oxide Passivated Junction•Very Low Forward V oltage Drop•Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guard−Ring for Stress Protection•Pb−Free Package is AvailableMechanical Characteristics•Case: Epoxy, Molded•Weight: 217 mg (Approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Polarity: Notch in Plastic Body Indicates Cathode Lead•ESD Ratings:Machine Model = CHuman Body Model = 3BMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R10VAverage Rectified Forward Current(@ T L = 110°C)I O 4.0ANon−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM150AOperating Junction Temperature T J−65 to +125°C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.Device Package Shipping†ORDERING INFORMATIONMBRS410LT3SMC2500/Tape & ReelPreferred devices are recommended choices for future use and best overall value.MBRS410LT3G SMC(Pb−Free)2500/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.THERMAL CHARACTERISTICSCharacteristicSymbol Min Pad (Note 2)1 Inch PadUnit Thermal Resistance,Junction−to−Lead Thermal Resistance,Junction−to−AmbientR q JL R q JA121097.059°C/WELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 1)V FT J = 25°C T J = 100°C V(I F = 2.0 A)(I F = 4.0 A)(I F = 8.0 A)0.310.330.350.2000.2250.250Maximum Instantaneous Reverse Current (Note 1)I R T J = 25°CT J = 100°CmA (Rated dc Voltage, V R = 5.0 V)(Rated dc Voltage, V R = 10 V)2.05.01002001.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2%.2.Mounted with Minimum Recommended Pad Size, PC Board FR4.V R , REVERSE VOLTAGE (V)1000.110I F , F O R W A R D C U R R E N T (A )Figure 3. Typical Reverse Current I R , R E V E R S E C U R R E N T (A )V R , REVERSE VOLTAGE (V)Figure 4. Typical Capacitance1Figure 5. Current Derating (Junction−to−Lead)905I F , A V E R A G E F O R W A R D C U R R E N T (A )T L , LEAD TEMPERATURE (°C)Figure 6. Forward Power DissipationI O , AVERAGE FORWARD CURRENT (A)P FFigure 7. Thermal Response, Junction−to−Ambient (min pad)1234678t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )PACKAGE DIMENSIONSSMCPLASTIC PACKAGE CASE 403−03ISSUE EDIM A MIN NOM MAX MIN MILLIMETERS1.902.13 2.410.075INCHES A10.050.100.150.002b 2.923.00 3.070.115c 0.150.230.300.006D 5.59 5.84 6.100.220E 6.60 6.867.110.260L 0.761.02 1.270.0300.0840.0950.0040.0060.1180.1210.0090.0120.2300.2400.2700.2800.0400.050NOM MAX 7.757.948.130.3050.3130.320H E ǒmm inchesǓSCALE 4:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.4.403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.0.020 REF0.51 REFL1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIMBRS410LT3G。

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TSTG Note: Thermal Resistance from Junction to Case with Device Mounted on 2” x 3” x 0.25” Al-Plate Heatsink.
5.0 500 5.5 -55 to +150 -55 to + 150
- 654 -
元器件交易网
TS4B01G THRU TS4B07G
Single Phase 4.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts Current 4.0 Amperes
TS4B
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE. (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
- 655 -
20 10
INSTANTANEOUS REVERSE CURRENT. ( A)
Tj=100 0C
10
4.0 2.0 1.0
Tj=125 0C
1
0.4 0.2 0.1 .6
8.3ms Single Half Sine Wave
Tj=25 0C
.7
.8
.9
1.0
1.1
1.2
1.3
0.1 0
20
40
60
02G
03G
04G
05G
06G
07G
VRRM VRMS VDC I(AV) IFSM VF IR RθJC TJ
50 35 50
100 70 100
200 140 200
400 280 400 4.0 120 1.0
600 420 600
800 1000 560 700 800 1000
V V V A A V uA uA ℃/W ℃ ℃
AVERAGE FORWARD CURRENT. (A)
4
3
2
1
MOUNTED ON 4X4 INCH COPPER PC BOARD 0.5"(12.7mm) LEAD LENGTH 0 50 CASE TEMPERATURE. ( C)
o
1
2
5
10
20
50
100
0
100
150
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER BRIDGE ELEMENT
100
FIG.4- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT
100
40
INSTANTANEOUS FORWARD CURRENT. (A)
5
FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE PER BRIDGE ELEMENT
PEAK FORWARD SURGE CURRENT. (A)
150 125 100 75 50 25 0 8.3ms Single Half Sine Wave JEDEC METHOD
.043(1.1) .035((2.2) .071(1.8)
.303(7.7) .287(7.3)
.030(0.75) .022(0.55)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
01G
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC = 115℃ Peak Forward Surge Current, 8.3 ms Single Half Sne-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 4.0A Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage @ TA=125℃ Typical Thermal Resistance (Note) Operating Temperature Range Storage Temperature Range
Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol TS4B TS4B TS4B TS4B TS4B TS4B TS4B Units Type Number
.118(3.0)X45
0
.996(25.3) .972(24.7) .602(15.3) .579(14.7)
.147(3.7) .130(3.3)
.382(9.7) .366(9.3)
.134(3.4) .122(3.1)
.176(4.37) .156(3.96)
.068(1.73) .060(1.52)
Features
UL Recognized File # E-96005 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Surge overload rating to 120 amperes peak High case dielectric strength of 2000VRMS Case: Molded plastic Weight: 0. 15 ounce, 4 grams Mounting torque: 5 in. lbs. Max.
元器件交易网
RATINGS AND CHARACTERISTIC CURVES (TS4B01G THRU TS4B07G)
FIG.1- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER BRIDGE ELEMENT
175