CMBT847中文资料

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BCM847BS中文资料

1.Product proﬁle1.1General descriptionNPN matched double transistor in a SOT363 (SC-88) SMD plastic package. Matched version of BC847BS. The transistors are fully isolated internally.PNP equivalent: BCM857BS.1.2Featuress Current gain matchings Base-emitter voltage matching1.3Applicationss Current mirrors Differential ampliﬁer1.4Quick reference dataBCM847BSNPN matched double transistor;∆h FE =10 %Rev. 02 — 6 April 2005Product data sheetTable 1:Quick reference data Symbol ParameterConditions Min Typ Max Unit V CEO collector-emitter voltage open base--45V I C collector current --100mAh FE DC current gain V CE = 5 V;I C =2mA 200290450∆h FE h FE matching V CE = 5 V;I C =2mA --10%∆V BEV BE matchingV CE = 5 V;I C =2mA --2mV2.Pinning information3.Ordering information4.Marking[1]* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in ChinaTable 2:PinningPin Description Simpliﬁed outlineSymbol1emitter TR12base TR13collector TR24emitter TR25base TR26collector TR1132456sym02021356TR1TR24Table 3:Ordering informationType numberPackage NameDescriptionVersion BCM847BSSC-88plastic surface mounted package; 6leadsSOT363Table 4:Marking codesType number Marking code [1]BCM847BSM1*5.Limiting values[1]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.6.Thermal characteristics[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.Table 5:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit Per transistorV CBO collector-base voltage open emitter -50V V CEO collector-emitter voltage open base -45V V EBO emitter-base voltage open collector -6V I C collector current (DC)-100mA I CM peak collector current single pulse;t p ≤1ms -200mA P tot total power dissipation T amb ≤ 25°C-200mW T stg storage temperature −65+150°C T j junction temperature -150°C T amb ambient temperature −65+150°C Per device P tottotal power dissipationT amb ≤ 25°C[1]-300mWTable 6:Thermal characteristics Symbol ParameterConditions Min Typ Max Unit Per deviceR th(j-a)thermal resistance from junction to ambientin free air[1]--416K/W7.Characteristics[1]Pulse test: t p ≤ 300µs;δ≤ 0.02.Table 7:CharacteristicsT amb = 25°C unless otherwise speciﬁed.Symbol Parameter Conditions Min Typ Max Unit Per transistor I CBOcollector-base cut-off current V CB = 30 V; I E = 0 A --15nA V CB = 30 V; I E = 0 A;T j =150°C --5µA I EBO emitter-base cut-off current V EB = 5 V; I C = 0 A --100nAh FEDC current gain V CE = 5 V; I C = 10µA -250-V CE = 5 V; I C = 2 mA200290450V CEsat collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA -50200mV I C = 100 mA; I B = 5 mA [1]-200400mV V BEsat base-emittersaturation voltage I C = 10 mA; I B = 0.5 mA -760-mV I C = 100 mA; I B = 5 mA -910-mV V BE base-emitter voltageV CE = 5 V; I C = 2 mA 610660710mV V CE = 5 V; I C = 10 mA--770mV C c collector capacitance V CB = 10 V; I E = i e = 0 A;f =1MHz -- 1.5pF C e emitter capacitance V EB =0.5V;I C =i c =0A;f =1MHz-11-pF f Ttransition frequencyV CE = 5 V; I C = 10 mA;f =100MHz 100250-MHzPer device ∆h FE DC current gain matchingV CE = 5 V; I C = 2 mA --10%∆V BEbase-emitter voltage matchingV CE = 5 V; I C = 2 mA--2mV8.Package outline9.Packing information[1]For further information and the availability of packing methods, see Section 14.[2]T1: normal taping [3]T2: reverse tapingFig 1.Package outline SOT363 (SC-88)04-11-08Dimensions in mm0.250.100.30.2pin 1index1.30.652.22.0 1.351.152.21.8 1.10.80.450.15132465Table 8:Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package DescriptionPacking quantity 300010000BCM847BSSOT3634 mm pitch, 8 mm tape and reel; T1[2]-115-1354 mm pitch, 8 mm tape and reel; T2[3]-125-16510.Revision historyTable 9:Revision historyDocument ID Release date Data sheet status Change notice Doc. number Supersedes BCM847BS_220050406Product data sheet-9397 750 14722BCM847BS_1 Modiﬁcations:•Table7 Revaluation of data according to the latest control samples•Table7 I CBO unit for conditions V CB = 30 V; I E = 0 A; T j = 150°C amended toµABCM847BS_120040914Product data sheet-9397 750 13711-11.Data sheet status[1]Please consult the most recently issued data sheet before initiating or completing a design.[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL .[3]For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.12.DeﬁnitionsShort-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.13.DisclaimersLife support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to theseproducts,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speciﬁed.14.Contact informationFor additional information, please visit: For sales ofﬁce addresses, send an email to: sales.addresses@Level Data sheet status [1]Product status [2][3]DeﬁnitionI Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice.IIPreliminary dataQualiﬁcationThis data sheet contains data from the preliminary speciﬁcation.Supplementary data will be published at a later date.Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.III Product data ProductionThis data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).15.Contents1Product proﬁle. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 23Ordering information. . . . . . . . . . . . . . . . . . . . . 24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36Thermal characteristics. . . . . . . . . . . . . . . . . . . 37Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 48Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 59Packing information. . . . . . . . . . . . . . . . . . . . . . 510Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 611Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 712Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 713Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 714Contact information . . . . . . . . . . . . . . . . . . . . . 7© Koninklijke Philips Electronics N.V.2005All rights are reserved.Reproduction in whole or in part is prohibited without the priorwritten consent of the copyright owner.The information presented in this document doesnot form part of any quotation or contract,is believed to be accurate and reliable and maybe changed without notice.No liability will be accepted by the publisher for anyconsequence of its use.Publication thereof does not convey nor imply any license underpatent- or other industrial or intellectual property rights.Date of release: 6 April 2005Document number: 9397 750 14722。

BC847三极管

103
0 10−2
10−1
1
10
102 103 I C (mA)
BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
VALUE 500
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product speciﬁcation
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise speciﬁed. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise ﬁgure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V

PC847XIJ000F资料

2. Package resin : UL flammability grade (94V-0)
■ Applications
1. I/O isolation for MCUs (Micro Controller Units) 2. Noise suppression in switching circuits 3. Signal transmission between circuits of different po-
ing) 3. High collector-emitter voltage (VCEO : 80V) 4. Current transfer ratio (CTR : MIN. 50% at IF=5mA,
VCE=5V) 5. Several CTR ranks available 6. High isolation voltage between input and output
PC847XI9J00F
PC847X0J000F
PC847XI0J00F
IC [mA] (IF=5mA, VCE=5V, Ta=25˚C)
2.5 to 30.0 4.0 to 13.0 6.5 to 20.0 10.0 to 30.0 4.0 to 20.0 6.0 to 30.0 4.0 to 30.0
1. Through-Hole [ex. PC847XJ0000F]
1.2±0.3
0.6±0.2
16
15 14
13 12 11 10
9
PC847XJ0000F Series
(Unit : mm)
Factory identification mark
Date code
PC817 PC817

百斯巴特服务盘中英文对照

百斯巴特定位仪维修服务盘中英文对照对于ML4600-8型（包括VAG1995, Formel2000, ML4600-8，Millennium, 百年版）定位仪，由于设备直接带有键盘，因此可直接进入下面过程。

但对于ML4000型（包括VAG1813, ML4001，KDS）定位仪,由于其只配备了光电板，而没有键盘，所以必须另外准备一个接口为大口的键盘。

（早期计算机都使用大口键盘，现在一般都使用PS2接口的键盘，接口外形比大口键盘要小。

若找不到大口键盘，可想办法找一根大小键盘接口转接线。

）进入计算机中的DOS状态的方法如下：开机进入定位仪程序准备状态主画面之后，先按住键盘上的“Back Space”键（即向前删除一格键）不松手，然后下键盘上的“E”键，则定位仪程序退出到DOS状态，屏幕上显示为C:\ML>。

把服务盘插入计算机软驱(服务盘的写保护应该打开)，开启主机电源，服务盘会自动引导启动过程（如果引导程序失效，而软盘内容可在DOS状态下读出，则请在A：>的状态下键入A:>auto，然后按回车键），最后在屏幕上出现以下画面：说明：重装软件程序能够删除掉硬盘中原来所装的定位仪程序或数据，然后把软件盘插入计算机软驱，重新启动，安装程序。

也可以不用此重装软件的程序，直接把软件盘插入计算机软驱，重新启动，安装程序。

新安装的程序会自动覆盖掉老程序。

读通讯板序列号的程序可以读出通讯板内所写的设备序列号，如果是通用通讯板，则读出结果为：universal.按0键可以退出服务程序，返回到DOS状态。

6，7，8，9为特殊功能，请勿使用。

常用的操作是2-更换传感器主板和3-更换传感器镜头。

以下一一举例。

一：更换传感器主板按键盘上的2键，程序自动进入更换传感器主板的步骤。

屏幕显示的中英文对照如下所示：二：更换传感器镜头按键盘上的3键，程序自动进入更换传感器主板的步骤。

屏幕显示的中英文对照如下所示：在操作过程中可能出现的错误提示为：三：更换通讯板：说明：更换通讯板必须使用通用通讯板。

BC847BS;中文规格书,Datasheet资料

©2007 Fairchild Semiconductor Corporation BC847BS Rev. ABC847BSJune 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07.Absolute Maximum Ratings * T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics * T a= 25°C unless otherwise noted*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.SymbolParameterValueUnitsV CBO Collector-Base Voltage 50V V CES Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 6.0V I C Collector Current (DC)100mA T J, T STGJunction Temperature and Storage Temperature-55 ~ +150°CSymbolCharacteristicMaxUnitsP D Total Device Dissipation Derate above 25℃2101.6mW mW/℃R θJAThermal Resistance, Junction to Ambient625℃/WC1B2E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.Pin #1 B1C2E2 SC70-6Mark: .1FDual NPN Signal TransisterBC847BS Rev. ABC847BSElectrical Characteristics * T a= 25°C unless otherwise notedOff CharacteristicsOn Characteristics* Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.SymbolParameter Test Condition MIN MAX UnitsV (BR)CBO Collector-Emitter Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CES Collector-Base Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CEO Collector-Base Breakdown Voltage I C = 10 mA, I B = 045V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μA, I C = 06.0V I CBOCollector-Cutoff CurrentV CB = 30 V, I E = 0V CB = 30 V, I E = 0, T A = 150°C155.0nA μAh FE DC Current GainI C = 2.0 mA, V CE = 5.0 V200450V CE(sat )Collector-Emitter Saturation Voltage *I C = 10 mA, I B = 0.5 mAI C = 100 mA, I B = 5.0 mA 0.250.65V V V BE(on )Emitter-Base Breakdown Voltage *I C = 2.0 mA, V CE = 5.0 V I C = 10 mA, V CE = 5.0 V0.580.70.77V VtmFAIRCHILD SEMICONDUCTOR TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.BC847BSDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™μSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT ®FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I233BC847BS Rev. A分销商库存信息: FAIRCHILDBC847BS。

BC847BVC-7;中文规格书,Datasheet资料

NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures• Epitaxial Die Construction• Ultra-Small Surface Mount Package• Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Note 4)•Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-563 • Case Material: Molded Plastic, "Green" Molding Compound. ULFlammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.002 grams (approximate)Maximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Unit Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C100mAThermal CharacteristicsCharacteristicSymbol Value Unit Power Dissipation (Note 2)P D 150 mW Thermal Resistance, Junction to Ambient (Note 2) R θJA 833 °C/W Operating and Storage Temperature Range T J , T STG-55 to +150°CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Typ Max UnitTest ConditionCollector-Base Breakdown Voltage (Note 5) V (BR)CBO 50 — — V I C = 10μA, I B = 0 Collector-Emitter Breakdown Voltage (Note 5) V (BR)CEO 45 — — V I C = 10mA, I B = 0 Emitter-Base Breakdown Voltage (Note 5) V (BR)EBO 6 — — V I E = 1μA, I C = 0DC Current Gain (Note 5) h FE 200 290 450 — V CE = 5.0V, I C = 2.0mA Collector-Emitter Saturation Voltage (Note 5) V CE(SAT) — — 100 300 mV I C = 10mA, I B = 0.5mA I C = 100mA, I B = 5.0mA Base-Emitter Saturation Voltage (Note 5) V BE(SAT) — 700 900 — mV I C = 10mA, I B = 0.5mA I C = 100mA, I B = 5.0mA Base-Emitter Voltage (Note 5) V BE 580 — 660 — 700 770 mV V CE = 5.0V, I C = 2.0mA V CE = 5.0V, I C = 10mA Collector-Emitter Cutoff Current (Note 5) I CBO I CBO — — 15 5.0 nA µA V CB = 30VV CB = 30V, T A = 150°C Gain Bandwidth Product f T 100 — — MHz V CE = 5.0V, I C = 10mA, f = 100MHzOutput Capacitance C OBO — — 4.5 pF V CB = 10V, f = 1.0MHz Noise FigureNF——10dBV CE = 5V, R S = 2.0k Ω, f = 1.0kHz, BW = 200HzNotes:1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at /datasheets/ap02001.pdf.3. No purposefully added lead.4. Diodes Inc's "Green" policy can be found on our website at /products/lead_free/index.php5. Short duration pulse test used to minimize self-heating effect.Top View Bottom ViewDevice SchematicC 1B 2E 2C 2E 1B 1Please click here to visit our online spice models database.050100150250200150500T , AMBIENT TEMPERATURE (C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 2)A °P , P O W E R D I S S I P A T I O N (m W )Dh D C C U R R E N T G A I NF E ,I , COLLECTOR CURRENT (mA)Fig. 2 Typical DC Current Gain vs. Collector Current CV , C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 3 Typical Collector Emitter Saturation Voltagevs. Collector CurrentCf , G A I N -B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current COrdering Information (Note 6)Part Number Case Packaging BC847BVC-7SOT-563 3000/Tape & ReelNotes:6. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code S T U V W X Y Z A B CMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D4VK = Product Type Marking Code YM = Date Code MarkingY = Year (ex: S = 2005)M = Month (ex: 9 = September) 4VK YMPackage Outline DimensionsSuggested Pad LayoutSOT-563Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.100.30 0.20 M 0.10 0.18 0.11 All Dimensions in mmDimensions Value (in mm)Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5XZYC1C2C2GIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2009, Diodes Incorporated分销商库存信息: DIODESBC847BVC-7。

LBC847BWT1G

132LBC846AWT1G,BWT1GLBC847AWT1G,BWT1GCWT1GLBC848AWT1G,BWT1GCWT1GSOT–323 /SC–701.FR–5=1.0x 0.75 x 0.062inORDERING INFORMATION General Purpose TransistorsNPN SiliconPb Free–()Device Package Shipping LBC846AWT1G_S SC-703000/Tape&Reel 10000/Tape&ReelLBC846AWT3G_S SC-70We declare that the material of product compliance with RoHS requirements.LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1GELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)CharacteristicSymbolMinTypMaxUnitON CHARACTERISTICSDC Current Gainh FE(I C = 2.0 mA, V CE = 5.0 V)110180220200290450 420520800Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)V CE(sat)——0.25V (I C = 100 mA, I B = 5.0 mA)——0.6Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA)VBE(sat)—0.7—V (I C = 100 mA, I B = 5.0 mA) —0.9—Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V)V BE(on)580660700mV(I C = 10 mA, V CE = 5.0 V)——770SMALL–SIGNAL CHARACTERISTICSCurrent–Gain — Bandwidth Product f T 100——MHz (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)Output Capacitance (V CB = 10 V, f = 1.0 MHz)C obo —— 4.5pF Noise Figure (I C = 0.2 mA, NF dBV CE = 5.0 V dc , R S = 2.0 k Ω, ——10f = 1.0 kHz, BW = 200 Hz) ——4.0I C , COLLECTOR CURRENT (mAdc)Figure 1. Normalized DC Current GainI C , COLLECTOR CURRENT (mAdc)Figure 2. “Saturation” and “On” Voltages0.20.51.02.05.0102050100200V CE = 10 V T A = 25°C2.01.51.00.80.60.40.30.20.10.20.30.50.7 1.02.03.05.07.01020305070100T A = 25°CV BE(sat) @ I C /I B =10V BE(on) @ V CE = 10 VV CE(sat) @ I C /I B = 10T A = 25°CV , V O L T A G E (V O L T S )1.00.90.80.70.60.50.40.30.20.10θV B , T E M P E R A T U R E C O E F F I C I E N T (m V / °C )1.01.21.62.02.42.8I B , BASE CURRENT (mA)Figure 3. Collector Saturation Region V C E , C O L L E C T O R – E M I T T E R V O L T A G E (V )I C = 200 mA–55°C to +125°CI C , COLLECTOR CURRENT (mA)Figure 4. Base–Emitter Temperature Coefficient2.01.61.20.80.40I C =10 mA I C = 100 mAI C =20 mAI C = 50 mAh F E , N O R M A L I Z E D D C C U R R E N T G A I N0.2 1.0101000.020.11.01020LBC846A, LBC847A, LBC848ALBC846B, LBC847B, LBC848B LBC847C, LBC848C LBC846A, LBC847A,L BC848ALBC846B, LBC847B,L BC848B LBC847C, LBC848CLBC847/LBC848V R , REVERSE VOLTAGE (VOLTS)Figure 5. CapacitancesI C , COLLECTOR CURRENT (mAdc)Figure 6. Current–Gain – Bandwidth ProductI C , COLLECTOR CURRENT (mA)Figure 7. DC Current GainI C , COLLECTOR CURRENT (mA)Figure 8. “On” VoltageI B , BASE CURRENT (mA)Figure 9. Collector Saturation RegionI C , COLLECTOR CURRENT (mA)Figure 10. Base–Emitter Temperature CoefficientT A = 25°CV BE(sat) @ I C /I B = 10V BE @ V CE = 5.0 VV CE = 10V T A = 25°CT A = 25°CV CE = 5V T A = 25°CV CE(sat) @ I C /I B = 10V C E , C O L L E C T O R – E M I T T E R V O L T A G E (V O L T S )θV B , T E M P E R A T U R E C O E F F I C I E N T (m V /°C )h F E , D C C U R R E N T G A I N (N O R M A L I Z E D )V , V O L T A G E (V O L T S )f T , C U R R E N T – G A I N – B A N D W I D T H P R O D U C T (M H z )V , V O L T A G E (V O L T S )I C =10 mA100mA20mA200mAT A = 25°Cθ VB for V BE–55°C to 125°CC obC ib–1.0–1.4–1.8–2.2–2.6–3.01.00.80.60.40.2400300200100806040302010.07.05.03.02.01.02.01.00.50.22.01.61.20.80.400.40.60.81.02.0 4.0 6.08.01020400.50.71.02.03.05.07.0102030500.10.21.0101000.20.5 1.0 2.0 5.01020501002000.20.51.02.05.01020501002000.020.050.10.20.5 1.0 2.0 5.0102050mALBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1GLBC846V R , REVERSE VOLTAGE (VOLTS)Figure 11. CapacitanceI C , COLLECTOR CURRENT (mA)Figure 12. Current–Gain – Bandwidth ProductC , C A P A C I T A N C E (p F )f T , C U R R E N T – G A I N – B A N D W I D T H P R O D U C T TC obC ibT A = 25°CV CE = 5 V T A = 25°C0.10.20.5 1.0 2.0 5.01020501001.0 5.010501004020106.04.02.05002001005020LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G3.COLLECTORNOTES:1.DIMENSION I NG AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.SC -70 / SOT -323LBC846AWT1G,BWT1G, LBC847AWT1G,BWT1G, CWT1G, LBC848AWT1G,BWT1G,CWT1G。

BC847 规格书

[1] [2] [2] [2]
Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 A
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain hFE group A hFE group B hFE group C VCE = 5 V; IC = 2 mA Conditions open base Min 110 110 200 420 Typ 180 290 520 Max 45 100 800 220 450 800 Unit V mA
Table 5. BC847 BC847A BC847B BC847C BC847W BC847AW BC847BW BC847CW
[1]
Marking codes Marking code[1] 1H* 1E* 1F* 1G* 1H* 1E* 1F* 1G* Type number BC847T BC847AT BC847BT BC847CT BC847AM BC847BM BC847CM Marking code[1] 1N 1E 1F 1G D4 D5 D6

BC847BV,315;BC847BV,115;中文规格书,Datasheet资料

Product data sheet2001 Sep 10NPN general purpose double transistorBC847BVFEATURES•300 mW total power dissipation•Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector capacitance•Improved thermal behaviour due to flat leads•Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors •Reduces required board space •Reduces pick and place costs.APPLICATIONS•General purpose switching and amplification.DESCRIPTIONNPN double transistor in a SOT666 plastic package. PNP complement: BC857BV.MARKINGPINNINGTYPE NUMBER MARKING CODEBC847BV1FPIN DESCRIPTION 1, 4emitter TR1; TR22, 5base TR1; TR26, 3collectorTR1; TR2NPN general purpose double transistor BC847BVLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT Per transistorV CBO collector-base voltage open emitter−50VV CEO collector-emitter voltage open base−45VV EBO emitter-base voltage open collector−5VI C collector current (DC)−100mAI CM peak collector current−200mAI BM peak base current−200mAP tot total power dissipation T amb≤ 25 °C; note 1−200mWT stg storage temperature −65+150°CT j junction temperature−150°CT amb operating ambient temperature −65+150°CPer deviceP tot total power dissipation T amb≤ 25 °C; note 1−300mW Note1.Transistor mounted on an FR4 printed-circuit board.THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-a thermal resistance from junction to ambient notes 1 and 2416K/W Notes1.Transistor mounted on an FR4 printed-circuit board.2.The only recommended soldering method is reflow soldering.NPN general purpose double transistorBC847BVCHARACTERISTICST amb = 25 °C; unless otherwise specified.Note1.Pulse test: t p ≤ 300 μs; δ ≤ 0.02.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNITPer transistor I CBO collector-base cut-off current I E = 0; V CB = 30 V−−15nA I E = 0; V CB = 30 V; T j = 150 °C −−5μA I EBO emitter-base cut-off current I C = 0; V EB = 5 V −−100nAh FE DC current gain I C = 2 mA; V CE = 5 V 200−450V BE base-emitter voltage I C = 2 mA; V CE = 5 V 580655700mV V CEsat collector-emitter saturation voltageI C = 10 mA; I B = 0.5 mA −−100mV I C = 100 mA; I B = 5 mA; note 1−−300mV V BEsat base-emitter saturation voltage I C = 10 mA; I B = 0.5 mA−755−mV C c collector capacitance I E = I e = 0; V CB = 10 V; f = 1 MHz−− 1.5pF C e emitter capacitance I C = i c = 0; V EB = 500 mV;f = 1 MHz −11−pF f T transition frequencyI C = 10 mA; V CE = 5 V; f = 100 MHz 100−−MHzNPN general purpose double transistor BC847BV Graphical information BC847BVNPN general purpose double transistor BC847BV PACKAGE OUTLINENPN general purpose double transistorBC847BVDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 10Document order number: 9397 750 08589分销商库存信息:NXPBC847BV,315BC847BV,115。

BC 847PN资料

NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain• Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one packageTape loading orientationVPS05604631542EHA07177EHA07193123456W1s Direction of UnreelingTop View Marking on SOT-363 package (for example W1s)corresponds to pin 1 of devicePosition in tape: pin 1opposite of feed hole sideType Marking Pin Configuration PackageBC 847PN 1Ps1=E12=B13=C24=E25=B26=C1SOT-363Maximum Ratings ParameterValue Symbol Unit VCollector-emitter voltage V CEO 45Collector-base voltage 50V CBO Collector-emitter voltage V CES V 50V EBO V Emitter-base voltage 5mA DC collector current I C 100200Peak collector currentI CM Total power dissipation , T S = 115 °C mW P tot 250T j 150Junction temperature °C -65 (150)Storage temperatureT stgThermal Resistance Junction ambient 1)R thJA ≤275K/WJunction - soldering pointR thJS≤1401) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 CuElectrical Characteristics at T A =25°C, unless otherwise specified Parameter Symbol ValuesUnitmin.typ.max.DC Characteristics per Transistor Collector-emitter breakdown voltage I C = 10 mA, I B = 0V-V (BR)CEO-45Collector-base breakdown voltage I C = 10 µA, I B = 0--V (BR)CBO50Collector-emitter breakdown voltage I C = 10 µA, V BE = 0V (BR)CES50V--Emitter-base breakdown voltage I E = 10 µA, I C = 0 --V (BR)EBO5Collector cutoff current V CB = 30 V, I E = 0 15nA -I CBO-µA Collector cutoff current V CB = 30 V, I E = 0 , T A = 150 °C --I CBO5h FE-200 -630 250290DC current gain 1) I C = 10 µA, V CE = 5 V I C = 2 mA, V CE = 5 V-mV300650Collector-emitter saturation voltage1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA-- 90200V CEsat Base-emitter saturation voltage 1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA 700900V BEsat -- --Base-emitter voltage 1) I C = 2 mA, V CE = 5 V I C = 10 mA, V CE = 5 VV BE(ON) 580- 660- 7508201) Pulse test: t < 300µs; D < 2%Electrical Characteristics at T A=25°C, unless otherwise specifiedParameter Symbol UnitValuesmin.typ.max.AC Characteristics per TransistorTransition frequencyI C = 20 mA, V CE = 5 V, f = 100 MHz--MHz250f T2C cbCollector-base capacitance V CB = 10 V, f = 1 MHz--pFEmitter-base capacitance V EB = 0.5 V, f = 1 MHz-10C eb-Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz4.5kΩ-h11e--Open-circuit reverse voltage transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz2-10-4 h12eShort-circuit forward current transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz--330-h21eOpen-circuit output admittanceI C = 2 mA, V CE = 5 V, f = 1 kHzh22e-30-µSTotal power dissipation P tot = f (T A*;T S) * Package mounted on epoxymWPtotPermissible Pulse LoadP totmax / P totDC = f (t p)Ptotmax/PtotDCPermissible Pulse Load R thJS= f (t p)1010101010K/WRthJSCollector-base capacitance C CB = f (V CBO )Emitter-base capacitance C EB = f (V EBO )041051010EHP00361CB0C V62EB0V EBC 810pF 12CB0C -11C CB(()BC 846 (850))Transition frequency f T = f (I C )V CE= 5V10101010EHP00363f mAMHz -10125310102110555ΙCCollector cutoff current I CBO = f (T A )V CB = 30V10050100150EHP00381T A51010nA10Ι555101043210-1maxtypC Collector-emitter saturation voltage I C = f (V CEsat ), h FE = 20100EHP00367CEsat10mA1010210-155V 0.30.510025-500.10.20.4CC CDC current gain h FE = f (I C) V CE = 5Vh231010210551015Base-emitter saturation voltageI C = f (V BEsat), h FE = 2010EHP00364BEsatV0.6V 1.2-110010121055mA0.20.40.8C25100C-50Ch parameter h e = f (I C) normalizedV CE= 5V101010EHP00368mA-1015h210-110110100555h11eh12eh21eh22eV CE= 5 VΙCh parameter h e =f (V CE) normalizedI C = 2mA0102030EHP00369VCEhV1.00.51.52.0=2 mAhhhheeee21111222CΙ。

MAX847资料

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
o 80mA Output from 1 Cell at 90% Efficiency o 13µA Idle Mode™ (coast) Current o Selectable Low-Noise PWM or Low-Current Operation o PWM Operating Frequency Synchronized to Seven Times an External Clock Source o Operates at 270kHz with No External Clock o Automatic Backup-Battery Switchover
REG2 REG1
RUN
COAST A/D INPUT OPTIONAL
RUN CH0 SYNC FILT REF REG3 AGND NICD

NXP-BC847系列中文资料

45 V, 100 mA NPN general-purpose transistors
Type number[1]
Marking code[2]
BC847
1H*
BC847A
1E*
BC847B
1F*
BC847B/DG
*BC
BC847C
1G*
BC847W
1H*
BC847AW
1E*
BC847BW
1F*
BC847BW/DG
G9*
BC847CW
1G*
BC847T
1N
[1] /DG: halogen-free
2 of 15
NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
Table 3. Pin SOT54 1 2 3
Pinning …continued Description
emitter base collector
BC547C[2]
[1] /DG: halogen-free [2] Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).
Version SOT416
SOT883 SOT54
Table 5. Marking codes
SOT54A 1 2 3
emitter base collector
SOT54 variant
1
emitter
2
base
3
collector

BC847BVN中文资料

2001 Nov 07
3
Philips Semiconductors
Product speciﬁcation
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
(1)
600
MLD703
handbook, halfpage
1200 mV 1000
TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current: typical values.
Fig.6
DC current gain as a function of collector current: typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
−104 handbook, halfpage VCEsat (mV) −103
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C

OPA847IDR资料

PACKAGE/ORDERING INFORMATION
PRODUCT OPA847 PACKAGE-LEAD SO-8 PACKAGE DESIGNATOR(1) D SPECIFIED TEMPERATURE RANGE –40°C to +85°C PACKAGE MARKING OPA847 ORDERING NUMBER OPA847ID OPA847IDR OPA847IDBVT OPA847IDBVR TRANSPORT MEDIA, QUANTITY Rails, 100 Tape and Reel, 2500 Tape and Reel, 250 Tape and Reel, 3000
"
OPA847
"
SOT23-6
"
D34;
OATI
"
"
"
"
"
NOTE: (1) For the most current specifications and package information, refer to our web site at .
APPLICATIONS
z HIGH DYNAMIC RANGE ADC PREAMPS z LOW NOISE, WIDEBAND, TRANSIMPEDANCE AMPLIFIERS z WIDEBAND, HIGH GAIN AMPLIFIERS z LOW NOISE DIFFERENTIAL RECEIVERS z ULTRASOUND CHANNEL AMPLIFIERS z IMPROVED UPGRADE FOR THE OPA687, CLC425, AND LMH6624

BC847B中文资料

BC847B BC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAsSILICON EPITAXIAL PLANAR NPN TRANSISTORSsMINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKINGsBC847B - THE PNP COMPLEMENTARY TYPE IS BC857BAPPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®June 2002ABSOLUTE MAXIMUM RATINGS1/4BC847B / BC847CTHERMAL DATAC unless otherwise specified)ELECTRICAL CHARACTERISTICS (T case = 25 oBC847B / BC847CInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC847B / BC847C。

LTV847中文资料

Ordering Information
Part Number
LTV-817 LTV-817M LTV-817S LTV-817S-TA LTV-817S-TA1
LTV-827 LTV-827M LTV-827S LTV-827S-TA LTV-827S-TA1
LTV-847 LTV-847M LTV-847S LTV-847S-TA LTV-847S-TA1
16-pin DIP 16-pin (leads with 0.4" spacing) 16-pin (lead bends for surface mount) 16-pin (tape and reel packaging of type I) 16-pin (tape and reel packaging of type II)
12-114
potentials and impedances.
12-110
元器件交易网
Note: 1.Year date code. 2. 2-digit work week. 3. Factory code shall be marked (Z : Taiwan, Y : Thailand). 4.Rank shall be or shall not be marked. 5. All dimensions are in millimeters (inches). 6. Tolerance is 0.25mm (.010 ) unless otherwise noted. 7. Specifications are subject to change without notice.
Package Dimensions
Applications

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NPN EPITAXIAL PLANAR SILICON TRANSISTORCMBT847 SOT23MARKING: AS BELOWABSOLUTE MAXIMUM RATINGS DESCRIPTIONSYMBOL VALUE UNIT Collector -Base VoltageVCBO 50V Collector -Emitter VoltageVCEO 50V Emitter Base VoltageVEBO 6.0V Collector CurrentIC 200mA Collector Power DissipationPC 150mW Operating And Storage JunctionTj, Tstg -55 to +150deg CTemperature RangeELECTRICAL CHARACTERISTICS (Ta= 25 deg C unless otherwise specified)DESCRIPTION SYMBOL TEST CONDITION MIN TYPMAXUNIT Collector -Emitter VoltageVCEO IC=100uA, IB=050--V Collector Cut off CurrentICBO VCB=50V, IE=0--100nA Emitter Cut off CurrentIEBO VEB=6V, IC=0--100nADC Current GainhFE(1)IC=1mA,VCE=6V 150-800hFE(2)IC=0.1mA,VCE=6V 50--Collector Emitter Saturation VoltageVCE(Sat)IC=100mA,IB=10mA --0.30V Base Emitter Saturation VoltageVBE(Sat)IC=100mA,IB=10mA -- 1.0V Dynamic CharacteristicsTransition Frequencyft VCE=6V,IC=10mA,-200-MHz Collector Output CapacitanceCob VCB=6V, IE=0- 2.5-pF f=1MHzNoise FigureNF VCE=6V, IE=0.1mA --15dBf=1kHz, Rg=2kohmsCLASSIFICATION E F G hFE(1)150-300250-500400-800MARKING NE NFNGPIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR13Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTape Specification for SOT-23 Surface Mount DeviceSOT-23 Package Reel InformationReel specifications for W" Packing (13" reel)SOT-23 Formed SMD PackageSOT-23 T&R3K/reel 10K/reel136 gm/3K pcs 415 gm/10K pcs3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12.0K 51.0K 10.0K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192.0K 408.0K 300.0K12 kgs 28 kgs 16 kgsPACKAGENet Weight/Qty DetailsSTANDARD PACKINNER CARTON BOXQty OUTER CARTON BOXQty Gr Wt SizeSizePacking Detailø329.2±0.5 / 178 ±0.514.47.9 – 10.9T R A I L E RF I X I NG T A P EL E A D E R9.2±0.5MAXø100.0±0.5 / 54.5 ±0.5ø2.0±0.5ø20.2 MINDETAIL Xø13.0+0.5–0.2All dimensions in m m330 / 180 mm – Antistatic Coated Plastic ReelNOTES:No. of Devices8m m Tape Size of Reel 330 mm (13")10,000 Pcs8m m Tape Size of Reel 180 mm (7")3,000 PcsThe bandolier of 330 mm reel contains at least 10,000 devices.The bandolier of 180 mm reel contains at least 3,000 devices.No m ore than 0.5% missing devices / reel. 50 empty compartm ents for 330 mm reel. 15 em pty com partments for 180 m m reel.Three consecutive empty places m ight be found provided this gap is followed by 6 consecutive devices.The carrier tape (leader) starts with at least 75 em pty positions (equivalent to 330 m m). In order to fix the carrier tape a self adhesive tape of 20 to 50 m m is applied. At the end of the bandolier at least 40 em pty positions (equivalent to 160 m m) are there.180or 3301.2.3.4.5.±±0.1All dimensions inmm±0.01±0.025NotesDisclaimerThe product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Discrete Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290e-mail sales@ 。