AOTF404L中文资料

AOTF404
D S
Symbol
Min Typ
Max
Units BV DSS 105
V 1T J =55°C
5I GSS 100nA V GS(th) 2.5 3.2
4
V I D(ON)90
A 2128T J =125°C
394723.531
m Ωg FS 73S V SD 0.72
1V I S
55
A C iss 1630
20382445pF C oss 142204265pF C rss 5185119pF R g
0.65 1.3 1.95ΩQ g (10V)30.8
38.546nC Q gs 6.489.6nC Q gd 8
1014nC t D(on)12.7ns t r 8.2ns t D(off)31.5ns t f 11.2ns t rr 344964ns Q rr
337
481
625nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/µs
Turn-On DelayTime V GS =10V, V DS =50V, R L =2.7Ω, R GEN =3Ω
Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Gate resistance
V GS =0V, V DS =0V, f=1MHz
SWITCHING PARAMETERS Total Gate Charge V GS =10V, V DS =50V, I D =20A
Gate Source Charge Gate Drain Charge Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =25V, f=1MHz Output Capacitance Reverse Transfer Capacitance Forward Transconductance
V DS =5V, I D =20A
Diode Forward Voltage I S =1A, V GS =0V
R DS(ON)Static Drain-Source On-Resistance
V GS =10V, I D =20A
m ΩV GS =6V, I D =20A
Gate Threshold Voltage V DS =V GS , I D =250µA On state drain current
V GS =10V, V DS =5V µA Gate-Body leakage current V DS =0V, V GS =±25V Drain-Source Breakdown Voltage I D =10mA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =105V, V GS =0V
Electrical Characteristics (T J =25°C unless otherwise noted)Parameter Conditions STATIC PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0: Otc. 2008
Vds
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Vdd Vdd
Resistive Switching Test Circuit & Waveforms
Vdd
Vds
Id
Vgs
BV
I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
AR
DSS
2
E = 1/2 LI AR
AR。