CC0402CNPO110M中文资料

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C0402C1231RAC中文资料

Surface Mount Ceramic Chip CapacitorsX7R DielectricX7R/0402 - .012 µF (123) - .10 µF (104) @ 6.3; 10; 16 VoltsMetricEIA Size Max.Size Code Code L - LengthW - WidthT - Thickness B - Bandwidth Separation 100504021.0 (.04) ± .05 (.002)0.5 (.02) ± .05 (.002)See Table 20.20 (.008)-0.40 (.016)0.3 (.012)Table 1Dimensions - Millimeters (Inches)New Product BulletinOutline DrawingF-9022A 4/05Table 2 - X7R - Capacitance Value ExtensionsCapacitance Values (µF)KEMET PartNumber Capacitance ToleranceThicknessmm Qty 7” Reel Qty 13” Reel .012C0402C123(1)(2)RAC K,M 0.5 ± .0510,00050,000.015C0402C153(1)(2)RAC K,M 0.5 ± .0510,00050,000.018C0402C183(1)(2)RAC K,M 0.5 ± .0510,00050,000.022C0402C223(1)(2)RAC K,M 0.5 ± .0510,00050,000.027C0402C273(1)(2)RAC K,M 0.5 ± .0510,00050,000.033C0402C333(1)(2)RAC K,M 0.5 ± .0510,00050,000.039C0402C393(1)(2)RAC K,M 0.5 ± .0510,00050,000.047C0402C473(1)(2)RAC K,M 0.5 ± .0510,00050,000.056C0402C563(1)(2)RAC K,M 0.5 ± .0510,00050,000.068C0402C683(1)(2)RAC K,M 0.5 ± .0510,00050,000.082C0402C823(1)(2)RAC K,M 0.5 ± .0510,00050,000.10C0402C104(1)(2)RACK,M0.5 ± .0510,00050,000(1) To complete KEMET part number, insert the alpha code for tolerance desired. K = ±10%; M = ±20%(2) To complete KEMET part number, insert the numeric code for voltage desired. 9 = 6.3 volts; 8 = 10 voltsand 4 = 16 volts.Electrical ParametersAs detailed in the KEMET Surface Mount Catalog F3102 for X7R, with following specific requirements based on room temperature (25°C) parameters:•Operating Range: -55°C to +125°C, with no-bias capacitance shift limited to ± 15% over that range •Insulation Resistance (IR) measured after 2 minutes at rated voltage @ 25°C: Limit is 500 megohm-microfarads•Capacitance and Dissipation Factor (DF) measured at 1KHz at 1.0Vrms. DF Limit for 6.3 and 10 volts is 5.0%. DF for 16 volt is 3.5%.Soldering ProcessThe 0402 components are suitable for reflow soldering only. All parts incorporate the standard KEMET barrier layer of pure nickel, with an overplate of pure tin to provide excellent solderability as well as resistance to leaching.MarkingThese chips are supplied unmarked.In general, the information in the KEMET Surface Mount catalog F3102 applies to these capacitors. The information in this bulletin supplements that in the catalog.© KEMET Electronics Corporation • P.O. Box 5928 • Greenville, SC 29606 • (864) 963-6300 • 。

CC4012中文资料

参数 tPLH输出由低电平到高电平传输延迟时间 tPHL输出由高电平到低电平传输延迟时间 tTLH输出由低电平到高电平转换时间 tTHL输出由高电平到低电平转换时间 CI输入电容（任一输入端）测试条件 CL＝50pF RL＝200k tr＝20ns tf＝20ns VDD（V）规范值最小最大 250 120 90 250 120 90 200 100 80 200 100 80 7.5 单位
V
4.5 9.0 13.5 4.5/0.5 9.0/1.0 13.5/1.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 -
V
-
V
5/0 5/0 10/0 15/0 5/0 10/0 15/0 15/0 5/0 10/0 15/0
mA
mA
µA µA
华强电子网
动态特性（TA＝25℃）：
引出端符号 1A－2A，1B－2B，1C－2C，1D－2D 1Y－2Y VDD Vss 推荐工作条件电源电压范围…………3V～15V 输入电压范围…………0V～VDD 工作温度范围 M 类…………－55℃～125℃ E 类………….－40℃～85℃ 极限值电源电压…...－0.5V～18V 输入电压……－0.5V~VDD+0.5V 输入电流…………….±10mA 储存稳定…………－65℃～150℃ 逻辑符号输入端输出端正电源地
5.0 10.0 15.0 5.0 10.0 15.0
5.0 10.0 15.0 5.0 10.0 15.0 -
ns
-
ns
-
ns-ns源自-pF华强电子网
CC4012------双4输入与非门概述： CC4011 为 4 输入正向逻辑与非门。 CC4011 与非门为系统设计者提供了直接的与非功能，补充了已有 COS/MOS 门系列，所有输入和输出经过缓冲，改善了输入/输出传输特性，使得由于负载容量的增加而引起的传输时间的变化维持到最小。

CD4011中文资料

TL F 5939CD4001BM CD4001BC Quad 2-Input NOR BufferedB Series Gate CD4011BM CD4011BC Quad 2-Input NAND Buffered B Series GateMarch1988 CD4001BM CD4001BC Quad2-InputNOR Buffered B Series GateCD4011BM CD4011BC Quad2-InputNAND Buffered B Series GateGeneral DescriptionThese quad gates are monolithic complementary MOS(CMOS)integrated circuits constructed with N-and P-chan-nel enhancement mode transistors They have equal sourceand sink current capabilities and conform to standard B se-ries output drive The devices also have buffered outputswhich improve transfer characteristics by providing veryhigh gainAll inputs are protected against static discharge with diodesto V DD and V SSFeaturesY Low power TTL Fan out of2driving74Lcompatibility or1driving74LSY5V–10V–15V parametric ratingsY Symmetrical output characteristicsY Maximum input leakage1m A at15V over full tempera-ture rangeSchematic DiagramsTL F 5939–1CD4001BC BMTL F 5939–2of device shownJ e A a BLogical‘‘1’’e HighLogical‘‘0’’e LowAll inputs protected by standardCMOS protection circuitTL F 5939–5CD4011BC BMTL F 5939–6of device shownJ e A BLogical‘‘1’’e HighLogical‘‘0’’e LowAll inputs protected by standardCMOS protection circuitC1995National Semiconductor Corporation RRD-B30M105 Printed in U S AAbsolute Maximum Ratings(Notes1and2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Voltage at any Pin b0 5V to V DD a0 5V Power Dissipation(P D)Dual-In-Line700mW Small Outline500mWV DD Range b0 5V DC to a18V DC Storage Temperature(T S)b65 C to a150 C Lead Temperature(T L)(Soldering 10seconds)260 C Operating ConditionsOperating Range(V DD)3V DC to15V DC Operating Temperature RangeCD4001BM CD4011BM b55 C to a125 C CD4001BC CD4011BC b40 C to a85 CDC Electrical Characteristics CD4001BM CD4011BM(Note2)Symbol Parameter Conditionsb55 C a25 C a125 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device V DD e5V V IN e V DD or V SS0 250 0040 257 5m ACurrent V DD e10V V IN e V DD or V SS0 500 0050 5015m A V DD e15V V IN e V DD or V SS1 00 0061 030m A V OL Low Level V DD e5V0 0500 050 05V Output Voltage V DD e10V l I O l k1m A0 0500 050 05V V DD e15V(0 0500 050 05V V OH High Level V DD e5V4 954 9554 95V Output Voltage V DD e10V l I O l k1m A9 959 95109 95V V DD e15V(14 9514 951514 95V V IL Low Level V DD e5V V O e4 5V1 521 51 5V Input Voltage V DD e10V V O e9 0V3 043 03 0V V DD e15V V O e13 5V4 064 04 0V V IH High Level V DD e5V V O e0 5V3 53 533 5V Input Voltage V DD e10V V O e1 0V7 07 067 0V V DD e15V V O e1 5V11 011 0911 0V I OL Low Level Output V DD e5V V O e0 4V0 640 510 880 36mACurrent V DD e10V V O e0 5V1 61 32 250 9mA (Note3)V DD e15V V O e1 5V4 23 48 82 4mA I OH High Level Output V DD e5V V O e4 6V b0 64b0 51b0 88b0 36mACurrent V DD e10V V O e9 5V b1 6b1 3b2 25b0 9mA (Note3)V DD e15V V O e13 5V b4 2b3 4b8 8b2 4mA I IN Input Current V DD e15V V IN e0V b0 10b10b5b0 10b1 0m AV DD e15V V IN e15V0 1010b50 101 0m A Connection DiagramsCD4001BC CD4001BMDual-In-Line PackageTL F 5939–3 Top ViewCD4011BC CD4011BMDual-In-Line PackageTL F 5939–4Top ViewOrder Number CD4001B or CD4011B2DC Electrical Characteristics CD4001BC CD4011BC(Note2)Symbol Parameter Conditionsb40 C a25 C a85 CUnits Min Max Min Typ Max Min MaxI DD Quiescent Device V DD e5V V IN e V DD or V SS10 00417 5m ACurrent V DD e10V V IN e V DD or V SS20 005215m A V DD e15V V IN e V DD or V SS40 006430m AV OL Low Level V DD e5V0 0500 050 05V Output Voltage V DD e10V l I O l k1m A0 0500 050 05V V DD e15V(0 0500 050 05V V OH High Level V DD e5V4 954 9554 95V Output Voltage V DD e10V l I O l k1m A9 959 95109 95V V DD e15V(14 9514 951514 95V V IL Low Level V DD e5V V O e4 5V1 521 51 5V Input Voltage V DD e10V V O e9 0V3 043 03 0V V DD e15V V O e13 5V4 064 04 0V V IH High Level V DD e5V V O e0 5V3 53 533 5V Input Voltage V DD e10V V O e1 0V7 07 067 0V V DD e15V V O e1 5V11 011 0911 0V I OL Low Level Output V DD e5V V O e0 4V0 520 440 880 36mACurrent V DD e10V V O e0 5V1 31 12 250 9mA (Note3)V DD e15V V O e1 5V3 63 08 82 4mA I OH High Level Output V DD e5V V O e4 6V b0 52b0 44b0 88b0 36mACurrent V DD e10V V O e9 5V b1 3b1 1b2 25b0 9mA (Note3)V DD e15V V O e13 5V b3 6b3 0b8 8b2 4mA I IN Input Current V DD e15V V IN e0V b0 30b10b5b0 30b1 0m AV DD e15V V IN e15V0 3010b50 301 0m A AC Electrical Characteristics CD4001BC CD4001BMT A e25 C Input t r t f e20ns C L e50pF R L e200k Typical temperature coefficient is0 3% C Symbol Parameter Conditions Typ Max Units t PHL Propagation Delay Time V DD e5V120250ns High-to-Low Level V DD e10V50100nsV DD e15V3570nst PLH Propagation Delay Time V DD e5V110250ns Low-to-High Level V DD e10V50100nsV DD e15V3570nst THL t TLH Transition Time V DD e5V90200nsV DD e10V50100nsV DD e15V4080nsC IN Average Input Capacitance Any Input57 5pFC PD Power Dissipation Capacity Any Gate14pFAC Parameters are guaranteed by DC correlated testingNote1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed Except for‘‘Operating Temperature Range’’they are not meant to imply that the devices should be operated at these limits The table of‘‘Electrical Characteristics’’provides conditions for actual device operationNote2 All voltages measured with respect to V SS unless otherwise specifiedNote3 I OL and I OH are tested one output at a time3AC Electrical Characteristics CD4011BC CD4011BMT A e25 C Input t r t f e20ns C L e50pF R L e200k Typical Temperature Coefficient is0 3% C Symbol Parameter Conditions Typ Max Unitst PHL Propagation Delay V DD e5V120250ns High-to-Low Level V DD e10V50100nsV DD e15V3570nst PLH Propagation Delay V DD e5V85250ns Low-to-High Level V DD e10V40100nsV DD e15V3070nst THL t TLH Transition Time V DD e5V90200nsV DD e10V50100nsV DD e15V4080nsC IN Average Input Capacitance Any Input57 5pFC PD Power Dissipation Capacity Any Gate14pF AC Parameters are guaranteed by DC correlated testingTypical Performance CharacteristicsTypicalTransfer CharacteristicsTL F 5939–7TypicalTransfer CharacteristicsTL F 5939–8TypicalTransfer CharacteristicsTL F 5939–9TypicalTransfer CharacteristicsTL F 5939–10TL F 5939–11FIGURE5TL F 5939–12FIGURE64Typical Performance Characteristics (Continued)TL F 5939–13FIGURE 7TL F 5939–14FIGURE 8TL F 5939–15FIGURE 9TL F 5939–16FIGURE 10TL F 5939–17FIGURE 11TL F 5939–18FIGURE 12TL F 5939–19FIGURE 13TL F 5939–20FIGURE 145C D 4001B M C D 4001B C Q u a d 2-I n p u t N O R B u f f e r e d B S e r i e s G a t e C D 4011B M C D 4011B C Q u a d 2-I n p u t N A N D B u f f e r e d B S e r i e s G a t ePhysical Dimensions inches (millimeters)Ceramic Dual-In-Line Package (J)Order Number CD4001BMJ CD4001BCJ CD40011BMJ or CD4011BCJNS Package Number J14AMolded Dual-In-Line Package (N)Order Number CD4001BMN CD4001BCN CD4011BMN or CD4011BCNNS Package Number N14ALIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectivenessbe reasonably expected to result in a significant injury to the userNational Semiconductor National Semiconductor National Semiconductor National Semiconductor CorporationEuropeHong Kong LtdJapan Ltd1111West Bardin RoadFax (a 49)0-180-530858613th Floor Straight Block Tel 81-043-299-2309。

PIC10F220中文资料

DS41270B-page ii
Preliminary
© 2006 Microchip Technology Inc.
元器件交易网
PIC10F220/222
6-Pin, 8-Bit Flash Microcontrollers
Device Included In This Data Sheet:
• In-Circuit Serial Programming™ (ICSP™) • In-Circuit Debugging (ICD) support • Power-on Reset (POR) • Short Device Reset Timer, DRT (1.125 ms typical) • Watchdog Timer (WDT) with dedicated on-chip
Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.

CD40106BCN中文资料

October 1987Revised January 1999CD40106BC Hex Schmitt Trigger © 1999 Fairchild Semiconductor Corporation DS005985.prf CD40106BCHex Schmitt TriggerGeneral DescriptionThe CD40106BC Hex Schmitt Trigger is a monolithic com-plementary MOS (CMOS) integrated circuit constructedwith N and P-channel enhancement transistors. The posi-tive and negative-going threshold voltages, V T+ and V T−,show low variation with respect to temperature (typ0.0005V/°C at V DD= 10V), and hysteresis, V T+− V T−≥ 0.2V DD is guaranteed.All inputs are protected from damage due to static dis-charge by diode clamps to V DD and V SS.Featuress Wide supply voltage range: 3V to 15Vs High noise immunity:0.7 V DD (typ.)s Low power TTL compatibility:Fan out of 2 driving 74L or 1 driving 74LSs Hysteresis:0.4 V DD (typ.),0.2 V DD guaranteeds Equivalent to MM74C14s Equivalent to MC14584BOrdering Code:Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.Connection DiagramPin Assignments for DIP and SOICTop ViewSchematic DiagramOrder Number Package Number Package DescriptionCD40106BCM M14A14-Lead Small Outline integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow BodyCD40106BCN N14A14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide 2C D 40106B CAbsolute Maximum Ratings (Note 1)(Note 2)Recommended Operating Conditions (Note 2)Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Recom-mended Operating Conditions” and “Electrical Characteristics” provides conditions for actual device operation.Note 2: V SS = 0V unless otherwise specified.DC Electrical Characteristics (Note 3)Note 3: I OH and I OL are tested one output at a time.DC Supply Voltage (V DD )−0.5 to +18 V DC Input Voltage (V IN )−0.5 to V DD +0.5 V DCStorage Temperature Range (T S )−65°C to +150°CPower Dissipation (P D )Dual-In-Line 700 mW Small Outline 500 mWLead Temperature (T L )(Soldering, 10 seconds)260°C DC Supply Voltage (V DD ) 3 to 15 V DC Input Voltage (V IN )0 toV DD V DC Operating Temperature Range (T A )−40°C to +85°CSymbol ParameterConditions−40°C +25°C +85°C Units MinMax MinTypMax MinMax I DDQuiescent Device CurrentV DD = 5V 4.0 4.030µA V DD = 10V 8.08.060µA V DD = 15V16.016.0120µA V OLLOW Level Output |I O | < 1 µA VoltageV DD = 5V 0.050.050.05V V DD = 10V 0.050.050.05V V DD = 15V0.050.050.05V V OHHIGH Level Output |I O | < 1 µA VoltageV DD = 5V 4.95 4.955 4.95V V DD = 10V 9.959.95100.95V V DD = 15V14.9514.951514.95V V T −Negative-Going Threshold V DD = 5V, V O = 4.5V 0.7 2.00.7 1.4 2.00.7 2.0V VoltageV DD = 10V , V O = 9V 1.4 4.0 1.4 3.2 4.0 1.4 4.0V V DD = 15V , V O = 13.5V 2.1 6.0 2.1 5.0 6.0 2.1 6.0V V T +Positive-Going Threshold V DD = 5V, V O = 0.5V 3.0 4.3 3.0 3.6 4.3 3.0 4.3V VoltageV DD = 10V , V O = 1V 6.08.6 6.0 6.88.66.08.6V V DD = 15V , V O = 1.5V 9.012.99.010.012.99.012.9V V HHysteresis (V T + − V T −)V DD = 5V 1.0 3.6 1.0 2.2 3.6 1.0 3.6V VoltageV DD = 10V 2.07.2 2.0 3.67.2 2.07.2V V DD = 15V3.010.83.0 5.010.83.010.8V I OLLOW Level Output V DD = 5V, V O = 0.4V 0.520.440.880.36mA Current (Note 3)V DD = 10V , V O = 0.5V 1.3 1.1 2.250.9mA V DD = 15V , V O = 1.5V 3.6 3.08.8 2.4mA I OHHIGH Level Output V DD = 5V, V O = 4.6V −0.52−0.44−0.88−0.36mA Current (Note 3)V DD = 10V , V O = 9.5V −1.3−1.1−2.25−0.9mA V DD = 15V , V O = 13.5V −3.6−3.0−8.8−2.4mAI INInput CurrentV DD = 15V , V IN = 0V −0.30−10−5−0.30−1.0µA V DD = 15V , V IN = 15V0.3010−50.30 1.0µACD40106BCAC Electrical Characteristics (Note 4)T A = 25°C, C L = 50 pF , R L = 200k, t r and t f = 20 ns, unless otherwise specifiedNote 4: AC Parameters are guaranteed by DC correlated testing.Note 5: C PD determines the no load ac power consumption of any CMOS device. For complete explanation see 74C Family Characteristics Application Note,AN-90.Switching Time Waveformst r = t f = 20 nsTypical ApplicationsLow Power OscillatorNote: The equations assume t 1 + t 2 >> t PHL + t PLHSymbolParameterConditionsMinTyp Max Units t PHL or t PLHPropagation Delay Time from V DD = 5V 220400ns Input to OutputV DD = 10V 80200ns V DD = 15V 70160ns t THL or t TLHT ransition TimeV DD = 5V 100200ns V DD = 10V 50100ns V DD = 15V4080ns C IN Average Input Capacitance Any Input 57.5pF C PDPower Dissipation CapacityAny Gate (Note 5)14pF 4C D 40106B CTypical Performance CharacteristicsTypical Transfer CharacteristicsGuaranteedGuaranteed Trip Point Range CD40106BCPhysical Dimensions inches (millimeters) unless otherwise noted16-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow BodyPackage Number M14AF a irch ild d o e s n o t a ssu m e a n y re spo n sib ility fo r u se o f a n y circu itry de scrib e d , n o circu it pa ten t lice nse s a re im p lie d a nd F a irch ild re se rv e s the rig h t a t a n y tim e w ith ou t n o tice to cha n g e sa id circu itry an d sp e cifica tio n s.C D 40106B C H e x S c h m i t t T r i g g e rLIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:1.Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into thebody, or (b) support or sustain life, and (c) whose failureto perform when properly used in accordance withinstructions for use provided in the labeling, can be rea-sonably expected to result in a significant injury to the user.2. A critical component in any component of a life support device or system whose failure to perform can be rea-sonably expected to cause the failure of the life support device or system, or to affect its safety or Physical Dimensions inches (millimeters) unless otherwise noted (Continued)14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” WidePackage Number N14A。

CM2004资料

CM20048位MASK单片机芯片CM20041．概述CM2004是一款8位MASK类型的RISC单片机。

该芯片可以凭借极其低廉的价格和相当于PIC16C54/56的性能，广泛地应用到键盘、鼠标、游戏摇杆、电子玩具及其它一些应用场合。

贝岭矽创公司开发了独有的程序代码过滤器RGEN，可以协助用户将针对PIC16C54/56的程序移植到CM2004中去。

CM2004目前已经有千万级的批量应用，性能稳定。

贝岭矽创公司还可根据客户要求修改芯片的端口和附加模块，以适应不同的应用。

2．主要特点● 采用精简指令集（RISC），33条指令● 指令字长12位，全部指令都是单字节指令● 除涉及PC值改变的指令外（如跳转指令等），其余指令都是单周期指令● 哈佛结构，数据总线和指令总线各自独立分开，数据总线宽度为8位，指令总线宽度为12位● 内部程序存储器（MASK ROM）空间为1K，内部普通寄存器组（RAM）为25个● 6个特殊功能寄存器● 2级子程序堆栈● 内部自振式看门狗计时器（WDT）● 内部上电复位电路● 内带一个8位定时器/计数器（RTCC）● XT/LP/RC振荡模式(还可以内置一个2.3MHz左右的RC振荡器)● 12根可独立编程I/O口（可利用/MCLR和TOCKI扩充到14位）● 低功耗设计● 工作电压 2.0V~6.5V● 工作频率为DC~20MHz● 18PIN/16PIN（/MCLR和TOCKI未外引）标准PDIP封装3．管脚排列4．管脚功能说明编号引脚名方向功能描述1 PA2 I/O PORT A位2，双向I/O，可根据客户要求改为开漏输出或纯输入2 PA3 I/O PORT A位3，双向I/O，可根据客户要求改为开漏输出或纯输入4 /MCLR I 外部复位端，“0”有效（内部上拉，不用时可做通用I/O）3 TOCKI I 计数器时钟输入（内部上拉，不用时可做通用I/O）5 VSS - 地6 PB0 I/O PORT B位0，双向I/O，可根据客户要求改为开漏输出或纯输入7 PB1 I/O PORT B位1，双向I/O，可根据客户要求改为开漏输出或纯输入8 PB2 I/O PORT B位2，双向I/O，可根据客户要求改为开漏输出或纯输入9 PB3 I/O PORT B位3，双向I/O，可根据客户要求改为开漏输出或纯输入10 PB4 I/O PORT B位4，双向I/O，可根据客户要求改为开漏输出或纯输入11 PB5 I/O PORT B位5，双向I/O，可根据客户要求改为开漏输出或纯输入12 PB6 I/O PORT B位6，双向I/O，可根据客户要求改为开漏输出或纯输入13 PB7 I/O PORT B位7，双向I/O，可根据客户要求改为开漏输出或纯输入14 VDD - 电源15 OSC2 O 振荡输出端16 OSC1 I 振荡输入端17 PA0 I/O PORT A位0，双向I/O，可根据客户要求改为开漏输出或纯输入18 PA1 I/O PORT A位1，双向I/O，可根据客户要求改为开漏输出或纯输入功能详述5．功能详述CM2004系统框图系统框图CM2004兼容PIC16C56，但两者在以下方面有所不同： 1) CM2004端口设计上可MASK 编程（上拉、下拉、开漏）；2) 指令系统译码不同；3) CM2004采用了新工艺，成本更低，功耗等参数更优；4）CM2004的看门狗基本溢出周期为15毫秒；5）CM2004最大可以支持14个独立的I/O。

CMC-M说明书

1
目录
前言 ..................................................... 4 第一章 CMC-M 软起动器的作用及特点........................... 5
1.1 作用 ................................................ 5 1.2 特点 ................................................ 5 第二章收货检查 ............................................ 6 第三章使用条件及安装 ...................................... 8 3.1 使用条件 ............................................ 8 3.2 安装方向 ............................................ 9 3.3 安装空间 ............................................ 9 3.4 电路安装 ............................................ 9 第四章电路连接 ............................................ 9 4.1 基本接线原理图 ...................................... 9 4.2 基本接线示意图 ..................................... 10 4.3 典型应用接线图 ..................................... 12 4.4 端子说明 ........................................... 13 第五章显示及操作说明 ..................................... 14 5.1 面板示意图 ......................................... 14 5.2 按键功能说明 ....................................... 14 5.3 显示状态说明 ....................................... 15 5.4 修改参数项操作流程 ................................. 15 第六章软起动器的控制模式 ................................. 16 6.1 限流软起动 ......................................... 16 6.2 电压斜坡起动 ....................................... 17 6.3 电流斜坡起动 ....................................... 17 6.4 突跳转矩软起动 ..................................... 18 6.5 自由停车 ........................................... 18 6.6 软停车 ............................................. 18 6.7 制动刹车 ........................................... 19 6.8 软停+制动刹车 ...................................... 19 第七章参数项及其说明 ...................................... 20 7.1 起停过程参数菜单 C000-C009 共 10 个参数 ............ 20

CSC1008中文资料

Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerNPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORSCSC1008 NPN CSA708 PNP TO-92CBELow Frequency Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTIONSYMBOL VALUE UNIT Collector -Base Voltage VCBO 80V Collector -Emitter Voltage VCEO 60V Emitter -Base Voltage VEBO 8.0V Collector CurrentIC 700mA Collector DissipationPC 800mW Operating And Storage Junction Tj, Tstg-55 to +150deg CTemperature RangeELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)DESCRIPTION SYMBOL TEST CONDITION CSC1008CSA708UNIT Collector -Base VoltageVCBO IC=100uA.IE=0>80>80V Collector -Emitter VoltageVCEO IC=10mA,IB=0>60>60V Emitter-Base VoltageVEBO IE=100uA, IC=0>8.0>8.0V Collector-Cut off CurrentICBO VCB=60V, IE=0<100<100nA Emitter-Cut off CurrentIEBO VEB=5V, IC=0<100<100nA DC Current GainhFE*IC=50mA,VCE=2V 40-40040-240Collector Emitter Saturation Voltage VCE(Sat)*IC=500mA,IB=50mA<0.4<0.7V Base Emitter Saturation Voltage VBE(Sat) *IC=500mA,IB=50mA <1.1<1.1VDYNAMIC CHARACTERISTICSTransition Frequency ft IC=50mA, VCE=10V >30typ50MHz Out-Put CapacitanceCobVCB=10V, IE=0typ8typ13pFf=1MHz*hFE CLASSIFICATION CSC1008R : 40 - 80O : 70 -140 Y : 120-240 G : 200-400CSA708R : 40 - 80O : 70 -140 Y : 120-240*Pulse Test: PW=350us, Duty Cycle=2%IS/ISO 9002Lic# QSC/L- 000019.2IS / IECQC 700000IS / IECQC 750100TO-92 Transistors on Tape and Ammo PackTO-92 Plastic PackageTO-92 Bulk TO-92 T&A1K/polybag 2K/ammo box200 gm/1K pcs 645 gm/2K pcs3" x 7.5" x 7.5"12.5" x 8" x 1.8"5.0K 2.0K17" x 15" x 13.5"17" x 15" x 13.5"80.0K 32.0K23 kgs 12.5 kgsPACKAGENet Weight/Qty DetailsSTANDARD PACKINNER CARTON BOXQty OUTER CARTON BOXQty Gr Wt SizeSizePacking Detail1. M AX IM UM A LIGNM ENT D EV IAT ION BE TW E EN LEAD S NO T TO BE G R EATER TH AN 0.2 m m.2. M AX IM UM NO N-C U M ULATIVE VAR IATIO N B ETW E EN TA PE FEE D H OLE S S HA LL NO T E XC EED 1 m m IN 20 PIT CH ES.3. H OLD DO W N TAP E NOT TO E XC EED BE YO ND TH E E DG E(S) O F C AR RIE R TAP E AND THE RE SH ALL BE NO EX PO SU R E O F AD HE SIV E.4. NO M O R E TH AN 3 CO NSE CU TIVE M ISS ING CO M P ONENTS ARE PE RM ITT ED.5. A TAP E TR AILE R, H AVING AT LE AS T TH RE E FE ED HO LES AR E R EQ UIR ED AF TER THE LAS T CO M PO NENT.6. SP LICE S S HA LL NO T INTER FER E W ITH T HE SPR O CK ET F EED H OLE S.A l l d i m i n s i o n s i n m m .DIM MIN.MAX.A4.325.33B 4.455.20C 3.18 4.19D 0.410.55E 0.350.50F 5 DEG G 1.14 1.40H 1.14 1.53K12.70—PIN CONFIGURATION 1. COLLECTOR 2. BASE 3. EMITTERNotesDisclaimerThe product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.These products are not designed for use in life saving/support appliances or systems.CDIL customers selling these products(either as individual Discrete Semiconductor Devices or incorporated in their end products),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290e-mail sales@ 。

MMSZ4xxxT1G系列和SZMMSZ4xxxT1G系列零点电阻电源器件的商品说明书

MMSZ4686T1G MMSZ4686T1G.MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series Zener Voltage Regulators 500 mW, Low I ZT SOD−123 Surface MountThree complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.Features•500 mW Rating on FR−4 or FR−5 Board•Wide Zener Reverse V oltage Range − 1.8 V to 43 V•Low Reverse Current (I ZT) − 50 m A•Package Designed for Optimal Automated Board Assembly •Small Package Size for High Density Applications•ESD Rating of Class 3 (>16 kV) per Human Body Model•SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free and are RoHS Compliant*Mechanical Characteristics:CASE:V oid-free, transfer-molded, thermosetting plastic case FINISH:Corrosion resistant finish, easily solderableMAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 SecondsPOLARITY:Cathode indicated by polarity band FLAMMABILITY RATING:UL 94 V−0MAXIMUM RATINGSRating Symbol Max Units Total Power Dissipation on FR−5 Board,(Note 1) @ T L = 75°CDerated above 75°C P D5006.7mWmW/°CThermal Resistance, (Note 2) Junction−to−Ambient R q JA340°C/WThermal Resistance, (Note 2) Junction−to−Lead R q JL150°C/WJunction and Storage Temperature Range T J, T stg−55 to+150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.2.Thermal Resistance measurement obtained via infrared Scan Method.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Cathode AnodeSee specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet.DEVICE MARKING INFORMATIONSOD−123CASE 425STYLE 1Device Package Shipping†ORDERING INFORMATIONMARKING DIAGRAM†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.MMSZ4xxxT1G SOD−123(Pb−Free)3,000 /Tape & ReelMMSZ4xxxT3G SOD−123(Pb−Free)10,000 /Tape & Reel xx= Device Code (Refer to page 3)M= Date CodeG= Pb−Free Package(Note: Microdot may be in either location)1SZMMSZ4xxxT1G SOD−123(Pb−Free)3,000 /Tape & ReelSZMMSZ4xxxT3G SOD−123(Pb−Free)10,000 /Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA)Symbol ParameterV Z Reverse Zener Voltage @ I ZTI ZT Reverse CurrentI R Reverse Leakage Current @ V RVR Reverse VoltageI F Forward CurrentV F Forward Voltage @ I FProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, V F = 0.9 V Max. @ I F = 10 mA)Device*DeviceMarkingZener Voltage (Note 3)Leakage CurrentV Z (Volts)@ I ZT I R @ V RMin Nom Max m A m A VoltsMMSZ4678T1G CC 1.71 1.8 1.89507.51 MMSZ4679T1G CD 1.90 2.0 2.105051 MMSZ4680T1G CE 2.09 2.2 2.315041 MMSZ4681T1G CF 2.28 2.4 2.525021 MMSZ4682T1G CH 2.565 2.7 2.8355011 MMSZ4683T1G CJ 2.85 3.0 3.15500.81 MMSZ4684T1G CK 3.13 3.3 3.47507.5 1.5 MMSZ4685T1G CM 3.42 3.6 3.78507.52 MMSZ4686T1G CN 3.70 3.9 4.105052 MMSZ4687T1G CP 4.09 4.3 4.525042 SZMMSZ4687T1G CG6 4.09 4.3 4.525042 MMSZ4688T1G CT 4.47 4.7 4.9450103 MMSZ4689T1G CU 4.85 5.1 5.3650103 MMSZ4690T1G/T3G CV 5.32 5.6 5.8850104 MMSZ4691T1G CA 5.89 6.2 6.5150105 MMSZ4692T1G CX 6.46 6.87.145010 5.1 MMSZ4693T1G CY7.137.57.885010 5.7 MMSZ4694T1G CZ7.798.28.61501 6.2 MMSZ4695T1G DC8.278.79.14501 6.6 MMSZ4696T1G DD8.659.19.56501 6.9 MMSZ4697T1G DE9.501010.505017.6 MMSZ4698T1G DF10.451111.55500.058.4 MMSZ4699T1G DH11.401212.60500.059.1 MMSZ4700T1G DJ12.351313.65500.059.8 MMSZ4701T1G DK13.301414.70500.0510.6 MMSZ4702T1G DM14.251515.75500.0511.4 MMSZ4703T1G†DN15.201616.80500.0512.1 MMSZ4704T1G DP16.151717.85500.0512.9 MMSZ4705T1G DT17.101818.90500.0513.6 MMSZ4706T1G DU18.051919.95500.0514.4 MMSZ4707T1G DV19.002021.00500.0115.2 MMSZ4708T1G DA20.902223.10500.0116.7 MMSZ4709T1G DX22.802425.20500.0118.2 MMSZ4710T1G DY23.752526.25500.0119.0 MMSZ4711T1G†EA25.652728.35500.0120.4 MMSZ4712T1G EC26.602829.40500.0121.2 MMSZ4713T1G ED28.503031.50500.0122.8 MMSZ4714T1G EE31.353334.65500.0125.0 MMSZ4715T1G EF34.203637.80500.0127.3 MMSZ4716T1G EH37.053940.95500.0129.6 MMSZ4717T1G EJ40.854345.15500.0132.6 3.Nominal Zener voltage is measured with the device junction in thermal equilibrium at T L = 30°C ±1°C.*Include SZ-prefix devices where applicable.†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & ReelTYPICAL CHARACTERISTICSV Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)1.21.00.80.60.40.20T, TEMPERATURE (5C)Figure 3. Steady State Power Derating P p k, P E A K S U R G E P O W E R (W A T T S )PW, PULSE WIDTH (ms)Figure 4. Maximum Nonrepetitive Surge PowerP D , P O W E R D I S S I P A T I O N (W A T T S )V Z , NOMINAL ZENER VOLTAGEFigure 5. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()ΩTYPICAL CHARACTERISTICSC , C A P A C I T A N C E (p F )V Z , NOMINAL ZENER VOLTAGE (V)Figure 6. Typical Capacitance 1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z EN E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )μV Z , NOMINAL ZENER VOLTAGE (V)Figure 7. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 8. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 9. Zener Voltage versus Zener Current(12 V to 91 V)SOD−123CASE 425−04ISSUE GDATE 07 OCT 2009SCALE 5:1NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.DIM MIN NOM MAXMILLIMETERSINCHESA0.94 1.17 1.350.037A10.000.050.100.000b0.510.610.710.020c1.600.150.055D 1.40 1.80E 2.54 2.69 2.840.100---3.680.140L0.253.860.0100.0460.0020.0240.0630.1060.1450.0530.0040.0280.0710.1120.152MIN NOM MAX3.56H E---------0.006------------GENERICMARKING DIAGRAM**For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT**This information is generic. Please refer to device datasheet for actual part marking. Pb−Free indicator, “G” ormicrodot “ G”, may or may not be present.XXX= Specific Device CodeM= Date CodeG= Pb−Free Package1STYLE 1:PIN 1. CATHODE2. ANODE0.910.036ǒmminchesǓSCALE 10:1------q001010°°°°(Note: Microdot may be in either location) MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor theON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************ON Semiconductor Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales RepresentativeMMSZ4686T1G MMSZ4686T1G.。

CC0402CRNPO9BN1R0中文资料

物料编号：CC0402CRNPO9BN1R0细参数_易容网
MLCC即是多层陶瓷电容片式，是电子信息产品不可或缺的基本组件之一。

我国MLCC的生产起步在80年代初，行业早期主要是在外资企业的带动下发展起来的，近年来国内企业在技术上实现突破，行业国产化成效显著，并推动了MLCC产量迅速增长。

目前，MLCC的应用领域已从手机、电脑、电视机等消费电子领域，逐步拓展到新能源发电、新能源汽车、节能灯具、轨道交通、直流输变电、三网融合、高清电视、机顶盒、手机电视等多个行业。

对于这个悄悄活跃在人们生活中的元件你又知道多少呢.
本次易容网为大家推荐比较常用的MLCC国巨 | Yageo品牌的料号CC0402CRNPO9BN1R0的相关参数
易容网是深圳市易容信息技术有限公司独自研发的全球最大的MLCC搜索采购服务网站，2014年创立于深圳市南山区，全国首家电子元器件行业电容元件的搜索引擎及o2o商务服务平台。

易容网（）现已建成全球最大的MLCC电容搜索引擎数据库，包含全球25家电容生产厂商超过28万组MLCC产品数据，用户可根据行业应用、物料编号、规格参数等信息快速的找到所有相关的MLCC电容数据。

易容网在搜索服务的前提下还提供村田、TDK、国巨、太阳诱电、风华高科等常见品牌产品的o2o商务服务，让企业客户实现询价、报价、在线订单、出库、实时物流、签收、账期服务等在线一站式商务服务体验。

AiP74HC04中文资料

VCC=2.0V IO=-20uA
VCC=4.5V IO =-20uA
Vi=VIH 或 VIL
VCC=4.5V IO=-4.0mA
VCC=6.0V IO=-20uA
VCC=6.0V IO=-5.2mA
VCC=2.0V IO=20uA
VCC=4.5V IO=20uA
Vi=VIH 或 VIL
VCC=4.5V IO=4.0mA
江苏省无锡市蠡园经济开发区滴翠路 100 号 9 栋 2 层
http://www.i-core. cn
邮编：214072
第6页共9页版本：2012-02-A1
表 733-11-I
5、封装尺寸与外形图 5. 1、DIP14 图与封装尺寸
无锡中微爱芯电子有限公司
Wuxi I-CORE Electronics Co., Ltd.
编号：AiP74HC04-AX-BJ-160
6、声明及注意事项：
6.1、产品中有毒有害物质或元素的名称及含量
有毒有害物质或元素
部件名称
铅（Pb）
汞（Hg）镉（Cd）
六阶铬多溴联苯多溴联苯（C（r Ⅵ））（PBBs）醚（PBDEs）
引线框
○
○
○
○
○
○
i-core 塑封树脂芯片内引线装片胶
VCC=6.0V IO=20uA
VCC=6.0V IO=5.2mA
VCC=6.0V Vi= VCC 或 GND
VCC=6.0V Vi=VIH 或 VIL Vo= VCC 或 GND
VCC=6.0V Vi =VCC 或 GND IO=0
最小
1.5 3.15 4.2 －－－ 1.9

LME49810中文资料

200
nA (max)
110
105
dB (min)
VCLIP
Baker Clamp Clipping Voltage
Clip Output Source pin Sink pin
97.2 –96.4
95.5 –95.5
V (max) V (min)
VBC
Baker Clamp Flag Output Voltage IFLAG = 4.7mA
Байду номын сангаас
VBA
Bias P&M Pin Open Voltage
BiasP - BiasM
IBIAS
Bias Adjust Function Current
0.4
V
10
V
2.8
mA
5

LME49810
元器件交易网
Note 1: All voltages are measured with respect to the GND pin unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJC, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJC or the number given in Absolute Maximum Ratings, whichever is lower. For the LME49810, TJMAX = 150° C and the typical θJC is 4°C/W. Refer to the Thermal Considerations section for more information. Note 4: Human body model, 100pF discharged through a 1.5kΩ resistor. Note 5: Machine Model, 220pF - 240pF discharged through all pins. Note 6: Typicals are measured at +25°C and represent the parametric norm. Note 7: Limits are guaranteed to National's AOQL (Average Outgoing Quality Level). Note 8: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. Note 9: The maximum operating junction temperature is 150°C. Note 10: Data taken with Bandwidth = 30kHz, AV = 29dB, CC = 10pF, and TA = 25°C except where specified.

FTR-P4CN010W1-01中文资料

Stamped on part number: P4CN012W1
s TYPICAL APPLICATIONS
Power window Door lock
Power seat Sun roof
Tilt steering Retractable antenna
1
元器件交易网
Weight
Approximately 9.0g
*1 Values when switching a resistive load at normal room temperature and humidity and in a clean environment. The minimum switching load varies with the switching frequency and operating environment.
元器件交易网
FTR-P4 SERIES
COMPACT POWER TWIN RELAY 1POLE X 2, H-BRIDGE—25A FOR AUTOMOTIVE APPLICATIONS
FTR-P4 Series
s FEATURES
q Compact for high density packaging. (60% volume of previous generation FBR512).
Maximum 10ms (not including bounce)
Maximum 5ms (not including bounce, no diode) Maximum 15ms (not including bounce, with diode)
Mechanical
10 x 106 operations minimum

cc1120中文资料

Digital Input/Output
General purpose IO
Power
3 V VDD to internal digital regulator
Power
Digital regulator output to external C
Digital Input
Serial data in
• 增强型无线电唤醒功能，用于自动低功耗接收轮询 • 独立 128 字节 RX 和 TX FIFO • 包括天线多样性功能 • 支持再传输 • 支持自动应答接收包 • TCXO 支持和控制，在功率模式也是如此 • 说前先听 (LBT) 系统的自动广播声道评估 (CCA) • 内置编码增益支持扩展范围和耐用性 • 数字 RSSI 测量 • 支持与 CC1190 无缝集成以实现范围扩展，使敏感
• 适合面向ETSI 1 类符合169 MHz 和 433 MHz 频带的系统
• 高频谱效率 (12.5 kHz时 9.6 kbps 通道与窄带命令兼容
• 电源 – 宽电源电压范围 (2 V – 3.6 V) – 低电流消耗： – RX: 3.7 mA 在 RX 嗅探模式 – RX: 17 mA 峰值电流在低功率模式 – RX: 22 mA 峰值电流在高性能模式 – TX：45 mA +14 dBm – 断电：< 0.3 µA – 步长为 0.4 dB、最高 16 dBm 的可编程输出功率 – 自动输出功率递增 – 可配置数据速率：0 至 200 kbps – 支持的调制格式：2-FSK, 2- GFSK, 4-FSK, 4-GFSK, MSK, OOK – 高级数字信号处理以提升同步检测性能 – 符合 RoHS 的 5 x 5 mm QFN 32 封装

2P4M中文资料(nec)中文数据手册「EasyDatasheet - 矽搜」

DRM,
Tj = 125°C
−
Tj = 25°C
−
Tj = 125°C
−
dV D/dt Tj = 125°C, V DM = 2/3 V DRM
10
−
VTM ITM = 4 A
−
IGT VDM = 6 V, R L = 100 Ω,
−
栅极触发电压
Note
VGT VDM = 6 V, R L = 100 Ω,
1985, 2006
The revised points can be easily searched by copying an "现场：修订部分可以通过在 PDF文件中复制一个 “R”,并在 “查找内容 ”指定它可以很容易地搜索 .
芯片中文手册,看全文,戳
2P4M,2P6M
最大额定值
Note
IH VDM = 24 V, I TM = 4 A
−
1
3
mA 参照图9
电路改判关断时间
tq
Tj = 125°C, I TM = 500毫安,
−
30
−
μs
−
diR / DT = 15 A /μs, V R ≥ 25 V,
VDM = 2/3 V DRM ,DV D / dt的= 10V μ/ s
特性
符号
非重复性峰值反向电压非重复性峰值断态电压重复峰值反向电压重复峰值断态电压
Note Note Note Note
VRSM VDSM VRRM VDRM
通态电流
IT (AV)
有效的通态电流浪涌不重复通态电流熔断电流
IT (RMS)
IT S M
∫
i2

cd4024中文资料pdf

15/0
VIL 输入低电 0.5/4.5
-
平电压
1.0/9.0
（最大） 1.5/13.5
VIH 输入高 4.5/0.5
-
电平电压 9.0/1.0
（最小） 13.5/1.5
IOH 输出高电 2.5
5/0
平电流
4.6
5/0
（最小）
9.5 10/0
13.5 15/0
5.0 10.0 15.0
5.0 10.0 15.0
15.0 5.0 10.0
15.0
tTLH、tTHL 输出转换时间
5.0
-
360
ns
160
130 200 80 60 200
ｍｏｃns
10.0 15.0
100 80
．
fcp
CP 频率
tw
CP 脉冲宽度
5.0 10.0 15.0 5.0 10.0
3.5 8.0 12.0 -
ｍ -
MHz
ｒ140 ａ60
5.0 10.0 15.0
5.0 10.0 15.0
5.0 -2.0 5.0 -0.64 10.0 -1.6 15.0 -4.2
-1.8 -0.61 -1.5 -4.0
0.05
V
4.95 9.95 14.95
1.5
V ｏｍｃV
3.0 4.0
3.5
．ｍV
7.0
ｒ 11.0 ａ -1.6
-0.51
ｗｗ
15.0 5.0 10.0
60 350 150
15.0
100
－ -1.3 ａ-3.4
-1.3 -0.42 -1.1 -2.8
-1.15 -0.36 - 0.9 -2.4

TPS40210中文资料

DGQ
Available
10-Pin SON
DRC
Preview
TAPE AND REEL QUANTITY 2500 80 3000 250 2500 80 3000 250
PART NUMBER
TPS40210DGQR TPS40210DGQ TPS40210DRCR TPS40210DRCT TPS40211DGQR TPS40211DGQ TPS40211DRCR TPS40211DRCT
Copyright © 2008, Texas Instruments Incorporated
元器件交易网 TPS40210, TPS40211
SLUS772 – MARCH 2008

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
5
Terminal Information
10
Application Information
12
Additional References
24
Design Examples
25
DESCRIPTION
The TPS40210 and TPS40211 are wide-input voltage (4.5 V to 52 V), non-synchronous boost controllers. They are suitable for topologies which require a grounded source N-channel FET including boost, flyback, SEPIC and various LED Driver applications. The device features include programmable soft start, overcurrent protection with automatic retry and programmable oscillator frequency. Current mode control provides improved transient response and simplified loop compensation. The main difference between the two parts is the reference voltage to which the error amplifier regulates the FB pin.

2MBI200U4H-120资料

K.Yamada
MS5F6035
1
a
13
H04-004-07b
元器件交易网
R e v i s e d
Date Classification Ind. Content
R e c o r d s
Applied date Issued date Drawn Checked Checked Approved
Feb.-09 -’05
Enactment
T.Miyasaka K.Yamada
Y.Seki
Oct.-25-’05
Revision
a
Revised characteristics VCE(sat) (P4/13)
S.Miyashita
O.Ikawa
K.Yamada
T.Miyasaka
MS5F6035
8. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting.

CC0805JNPO110M资料

/3a3a.htmlCAPACITORSCeramic ChipTDK`s new Sub-Miniature chip capacitor additions answer the electronics industry`s need for higher density packaging.TDK`s advanced technology allows for smaller size,highest capacitance,increased reliability,and automated assembly.Applications include computers and peripherals,telecommunications,measuring and medical equipment,and any application that requires miniaturization.Capacitance Range10pF tolVrms,1kHz 25NPO 1,000pF and less:1MHzCapacitance Tolerance Operating Temperature RangeAt the same condition as temperaturecharacteristics Working Voltage (DC WV)6.3V,10V,16V,25V,50V Dielectric Strength250%DC WVInsulation Resistance (DC WV)(I.R.)Greater than 10G ohms or 500ohms-F whichever is smaller16V,10V,6.3V:10G ohms or 100ohms-Fwhichever is smallerElectrical SpecificationPart Number ConfigurationDOC. NO. 22CB-000111PART NO. 2203-000013DOC. NO. 22CB-000111PART NO. 2203-000013/3a3a.htmlCeramic Capacitors CAPACITANCE TEMPERATURE CHARACTERISTICS Class IMULTILAYER CERAMIC CHIP CAPACITORSC TYPE [16,25,50Vdc],CLASS I AND CLASS IIClass IICAPACITANCE AND TOLERANCE3-1DOC. NO. 22CB-000111PART NO. 2203-000013Ceramic CapacitorsCAPACITANCE RANGEClass I 25Vdc Class II 16Vdc50Vdc25Vdc50Vdc 3-2Ceramic CapacitorsC TYPE[BASEMETAL ELECTRODE,16,25,50Vdc],CLASS IICAPACITANCE RANGE16Vdc50VdcHC TYPE[LARGECAPACITANCE,16,25,50,75Vdc],CLASS II HIGH DIELECTRIC CONSTANTCAPACITANCE RANGE(Operating temperature range:-25to+85o C[-13 to +185o F])l6Vdc50Vdcc25Vdc 75Vdc3-3Ceramic CapacitorsC TYPE [HIGH VOLTAGE]CLASS I [3kVd c] AND CLASS II [500Vdc,1k,2kVdc]Class I CAPACITANCE TEMPERATURE CHARACTERISTICS CAPACITANCE RANGE Class I 3kVdcClass II500Vdc2kVdclkVdc3-4Ceramic Capacitors FC AND FR TYPE [LOW LOSS FOR VHF/UHF]CLASS I [50,100,200,300,500Vdc]AND CLASS II [50Vdc]Multilayer Ceramic Capacitors for high frequency and low loss are designed for 100to 1000MHz power circuit applications.FC type FR typeCAPACITANCE RANGE (Operating temperature range:-55to +l25o C [-67to +257o F])Class I Class II 50,100,200,300,500Vdc 50VdcCAPACITANCE AND TOLERANCE3-5DOC. NO. 22CB-000111PART NO. 2203-000013。