2SC3212中文资料

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2SC3324中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)2SC3324Audio Frequency Low Noise Amplifier Applications• High voltage: V CEO = 120 V• Excellent h FE linearity: h FE (I C = 0.1 mA)/ h FE (I C = 2 mA)= 0.95 (typ.)• High h FE: h FE = 200~700• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small packageAbsolute Maximum Ratings (Ta = 25°C)Characteristics Symbol RatingUnitCollector-base voltage V CBO 120 V Collector-emitter voltage V CEO 120 V Emitter-base voltage V EBO 5 V Collector current I C 100 mABase currentI B 20 mA Collector power dissipation P C 150 mW Junction temperature T j 125 °C Storage temperature rangeT stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).MarkingUnit: mmJEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1AWeight: 0.012 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Collector cut-off current I CBO V CB= 120 V, I E= 0 ⎯ ⎯ 0.1 μA Emitter cut-off current I EBO V EB= 5 V, I C= 0 ⎯⎯ 0.1 μADC current gain h FE(Note)V CE= 6 V, I C= 2 mA 200 ⎯ 700Collector-emitter saturation voltage V CE (sat)I C= 10 mA, I B= 1 mA ⎯⎯ 0.3 V Transition frequency f T V CE= 6 V, I C= 1 mA ⎯ 100 ⎯ MHz Collector output capacitance C ob V CB= 10 V, I E= 0, f = 1 MHz ⎯ 3 ⎯ pFNF (1) V CB= 6 V, I C= 0.1 mA, f = 100 Hz,Rg = 10 kΩ⎯ 0.5 6Noise figureNF (2) V CB= 6 V, I C= 0.1 mA, f = 1 kHz,Rg = 10 kΩ⎯ 0.2 3dBNote: h FE classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbolRESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SC4422中文资料

IMAG. –268.988 –221.759 –167.756 –133.425 –110.501 –94.442 –82.874 –73.836 –67.183 –61.241
Yre (mS) REAL 0.000 0.005 0.006 0.024 0.025 0.056 0.079 0.124 0.180 0.246
2.0 IE = 0 f = 1 MHz
1.6
1.2
0.8
0.4
0
1
2
5 10 20
50
Collector to Base Voltage VCB (V)
Power Gain PG (dB)
Power Gain vs. Collector Current
20 VCE = 0 f = 900 MHz
16
–0.2
–0.4 –0.6 –0.8 –1
–10
–5 –4 –3
–2 –1.5
6
Hale Waihona Puke S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000
REAL
IMAG.
0.175
0.922
0.218
1.731
0.206
2.618
0.250
3.531
0.295
4.395
0.421
5.324
0.387
6.235
0.413
7.209
0.338
8.218

REF3212中文资料

proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could400ms/divSTEP RESPONSEC L=0pF,5V STARTUP V IN040020060080010001200Time(Hours)THEORY OF OPERATIONThe REF32xx is a family of CMOS, precision bandgap voltage references. Figure 1 shows the basic bandgapare biased so that theis greater than that of Q2. The difference of the two base-emitter voltages (Vbe1– Vbe2) has a positive temperature coefficient and is forced across . This voltage is amplified and added to the, which has a negative temperature coefficient. The resulting output voltage is APPLICATION INFORMATION The REF32xx does not require a load capacitor and is stable with any capacitive load. Figure 2 shows typical connections required for operation of the REF32xx. A supply bypass capacitor of 0.470.47µFPACKAGING INFORMATIONOrderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)REF3212AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3212AIDBVT ACTIVE SOT-23DBV 6250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3220AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3220AIDBVT ACTIVE SOT-23DBV 6250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3225AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3225AIDBVT ACTIVE SOT-23DBV 6250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3230AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3230AIDBVT ACTIVE SOT-23DBV 6250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3233AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3233AIDBVT ACTIVE SOT-23DBV 6250Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3240AIDBVR ACTIVE SOT-23DBV 63000Green (RoHS &no Sb/Br)CU NIPDAU Level-2-260C-1YEAR REF3240AIDBVTACTIVESOT-23DBV6250Green (RoHS &no Sb/Br)CU NIPDAULevel-2-260C-1YEAR(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not inproduction.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS)or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM8-Jul-2005Addendum-Page 1IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetwork Microcontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2005, Texas Instruments Incorporated。

2SC1318中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」

K 0.36 0.76
Emitter Collector Base
收藏家
绝对最大额定值
集电极基极电压
参数
集电极到发射极电压
发射器基极电压
连续集电极电流 -
集电极耗散功率
从结到环境热阻
结,存储温度
电气特性
参数
集电极基击穿电压集电极到发射极击穿电压发射器基极击穿电压集电极截止电流发射极截止电流
DC电流增益
°C
(T A= 25°C除非另有规定）EBO
I CBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob
Min Typ
60
-
50
-
7
-
-
-
-
-
85
-
40
-
-
-
-
-
-
200
-
-
Max
0.1 0.1 340 0.6 1.5 15
集电极到发射极饱和电压基地发射极电压转换频率集电极输出电容
25军2012年修订版B
(T A= 25°C除非另有规定）
符号 VCBO VCEO VEBO IC PC RθJA
TJ, TSTG
基地
发射器
等级 60 50 7 0.5 625 200
150, -55~150
单元 V V V A
mW °C / W
Any changes of specification will not be informed individually.
分页：1 2 3
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公司 Bauel emente 额定值和特性曲线

2SC3320中文资料

Item Collector-Base voltage Collector-Emitter voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time
IC = 7.5A, IB1 = 1.5A IB2 = -3A, RL = 20 ohm Pw = 20 µs Duty=<2%
Thermal characteristics Item Thermal resistance
Symbol Rth(j-c)
Test Conditions Junction to case
Collector current IC[A]
Saturation voltage VCE(sat), VBE(sat)[V]
Switching time ton, tstg, tf [µs]
Collector current IC[A] Base and Collector Saturation Voltage
Min. 500 400 400
7
10
Typ.
-
Max.
1.0 1.0
Units
V V V V mA mA
1.0
V

1.5
V
0.5
µs
1.5
µs
0.15 µs
Min. Typ.

2SC2712贴片三极管丝印LL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate Transistors2SC2712 TRANSISTOR (NPN)FEATURE· Low Noise: NF=1 dB (Typ),10dB(MAX)· Complementary to 2SA1162MAXIMUM RATINGS (T a =25 unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltageV (BR)CBO I C = 100μA, I E =0 60 V Collector-emitter breakdown voltageV (BR)CEO I C =1mA ,I B =0 50 V Emitter-base breakdown voltageV (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off currentI CBO V CB = 60 V, I E =0 0.1 μA Emitter cut-off currentI EBO V EB =5V, I C =0 0.1 μA DC current gainh FE V CE =6V, I C =2mA 70 700 Collector-emitter saturation voltageV CE(sat) I C = 100mA, I B =10mA 0.1 0.25 V Transition frequencyf T V CE =10V, I C = 1mA 80 MHz Output capacitanceC ob V CB =10V, I E =0,f=1 MHz 2.0 3.5 pF Noise Figure NF V CE =6V,I C =0.1mA,f=1kHz,Rg=10k Ω 1.0 10 dBCLASSIFICATION OF h FERankO Y GR BL Range70-140 120-240 200-400 350-700 Marking LO LY LG LL℃B,Dec,2011 【南京南山半导体有限公司 — 长电贴片三极管选型资料】11002550751001251500.2202SC2712Typical CharacterisiticsREVERSE VOLTAGE V R (V) I Static CharacteristicAMBIENT TEMPERATURE Ta ()℃h —— B,Dec,2011 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

2SC3212中文资料(Inchange Semiconductor)中文数据手册「EasyDatasheet - 矽搜」

符号
参数
VCBO
集电极基极电压
VCEO VEBO
IC ICM IB
集电极 - 发射极电压
发射极基极电压集电极电流集电极电流峰值基极电流
PC
集电极耗散功率
Tj
结温
T stg
储存温度
℃)
2SC3212 2SC3212A
条件打开发射器开基集电极开路
TC=25℃ Ta=25℃
VALUE
UNIT
800 V
集电极 - 发射极饱和电压
IC=5A ;I B=1A
VBEsat
基地发射极饱和电压
IC=5A ;I B=1A
集电极
ICBO
截止电流
2SC3212
VCB=800V; I E=0
2SC3212A VCB=900V; I E=0
IEBO
发射极截止电流
VEB=5V; I C=0
hFE-1
DC电流增益
IC=0.1A ; V CE=5V
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硅NPN功率晶体管
描述
・With TO-3PFa包・Low 集电极饱和电压・High VCBO ・High 高速开关
应用
・For 高速开关应用
钉扎
PIN 1 2 3
描述
Base
集电极发射器
产品规格
2SC3212 2SC3212A
・
绝对最大额定值（Ta = 25
500
V
1.0
V
1.5
V
100 μA
100 μA
15
8
3.5
MHz
1.0 μs
1.2
2.5
μs

2SC1213AK-C中文资料

2SC1213A(K)Silicon NPN EpitaxialApplication• Low frequency amplifier• Medium speed switchingOutline2SC1213A (K)2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO 50V Collector to emitter voltage V CEO 50V Emitter to base voltage V EBO 4V Collector currentI C 500mA Collector power dissipation P C 400mW Junction temperature Tj 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Collector to base breakdown voltageV (BR)CBO50——V I C = 10 µA, I E = 0Collector to emitter breakdown voltageV (BR)CEO 50——V I C = 1.0 mA, R BE = ∞Emitter to base breakdown voltageV (BR)EBO 4——V I E = 10 µA, I C = 0Collector cutoff current I CBO ——0.5µAV CB = 20 V, I E = 0DC current transfer ratio h FE *160—320V CE = 3 V, I C = 10 mA h FE 10——V CE = 3 V, I C = 500 mA*2Base to emitter voltage V BE 0.64—V V CE = 3 V, I C = 10 mA Collector to emitter saturation voltageV CE(sat)—0.120.6V I C = 150 mA, I B = 15 mA*2Base to emitter satruation voltageV BE(sat)—0.83 1.2V I C = 150 mA, I B = 15 mA*2Collector output capacitance Cob —7.0—pF V CB = 10 V, I E = 0, f = 1 MHz Gain bandwidth product f T —120—MHz V CE = 3 V, I C = 10 mA Turn on time t on —0.25—µS V CC = 10.3 VI C = 10 I B1 = –10 I B2 = 10 mATurn off time t off —0.85—µS Storage timet stg—0.4—µSV CC = 5 VI C = I B1 = –I B2 = 20 mANotes: 1.The 2SC1213A(K) is grouped by h FE as follows.2.Pulse test B CD60 to 120100 to 200160 to 3202SC1213A (K)32SC1213A (K)42SC1213A (K)52SC1213A (K)6Hitachi CodeJEDECEIAJWeight (reference value)TO-92 (1)ConformsConforms0.25 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SC系列三极管参数

2SC系列三极管参数2SC系列三极管参数2SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA0.75W >80MHz2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W 2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>2002SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W 2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W1A0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V50mA 0.4W 130MHz2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W 2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W 2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us 2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V0.07A0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2787 SI-N 50V 30mA 0.3W 250MHz | 2SC2791 SI-N 900V 5A 100W2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W 2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V140mA 10W 150MHz2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W 2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3APQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W 2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W 2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W 2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz2SC4544参数：Si-NPN 300V 0.1A 8W 70MHz| 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>102SC3262 N-DARL 800V 10A 100W | 2SC3263 SI-N 230V 15A 130W2SC3264 SI-N 230V 17A 200W 60MHz | 2SC3271 SI-N 300V 1A 5W 80MHz2SC3277 SI-N 500V 10A 90W 20MHz | 2SC3279 SI-N 10V 2A 0.75W 150MHz2SC3280 SI-N 160V 12A 120W 30MHz | 2SC3281 SI-N 200V 15A 150W 30MHz2SC3284 SI-N 150V 14A 125W 60MHz | 2SC3293 N-DARL+D 50V 1.2A 20W 1802SC3297 SI-N 30V 3A 15W 100MHz | 2SC3299 SI-N 60V 5A 20W 0.1us2SC3300 SI-N 100V 15A 100W | 2SC3303 SI-N 100V 5A 20W 0.2us2SC3306 SI-N 500V 10A 100W 1us | 2SC3307 SI-N 900V 10A 150W 1us2SC3309 SI-N 500V 2A 20W 1us | 2SC3310 SI-N 500V 5A 30W1us2SC3311 SI-N 60V 0.1A 0.3W 150MHz | 2SC3320 SI-N 500V 15A80W2SC3326 SI-N 20V 0.3A 0.15W 30MHz | 2SC3327 SI-N 50V 0.3A0.2W 30MHz2SC3328 SI-N 80V 2A 0.9W 100MHz | 2SC3330 SI-N 60V 0.2A 0.3W 200MHz2SC3331 SI-N 60V 0.2A 0.5W 200MHz | 2SC3332 SI-N 180V 0.7A 0.7W 120MHz2SC3334 SI-N 250V 50mA 0.9W 100MHz | 2SC3345 SI-N 60V 12A40W 90MHz2SC3346 SI-N 80V 12A 40W 0.2us | 2SC3355 SI-N 20V 0.1A 0.6W 6.5GHz2SC3356 SI-N 20V 0.1A 0.2W 7GHz | 2SC3377 SI-N 40V 1A 0.6W 150MHz2SC3378 SI-N 120V 0.1A 0.2W 100MHz | 2SC3379 SI-N 20V 1.5APQ=3W2SC3381 2xSI-N 80V 0.1A 0.4W 170MHz | 2SC3383 SI-N 60V 0.2A 0.5W 250MHz2SC3397 SI-N 50V 0.1A 250MHz 46K/ | 2SC3399 SI-N 50V 0.1A250MHz2SC3400 SI-N 50V 0.1A 250MHz 22K/ | 2SC3401 SI-N 50V .1A 46K/23KOHM2SC3402 SI-N 50V 0.1A 250MHz 10K/ | 2SC3405 SI-N 900V 0.8A20W 1us2SC3409 SI-N 900V 2A 80W .8uS | 2SC3416 SI-N 200V 0.1A 5W 70MHz2SC3419 SI-N 40V 0.8A 5W 100MHz | 2SC3420 SI-N 50V 5A 10W 100MHz2SC3421O SI-N 120V 1A 1.5W BJT O-G | 2SC3421Y SI-N 120V1A10W 120MHz2SC3422Y SI-N 40V 3A 10W 100MHz | 2SC3423 SI-N 150V 50mA 5W 200MHz2SC3425 SI-N 500V 0.8A 10W | 2SC3446 SI-N 800V 7A 40W 18MHz2SC3447 SI-N 800V 5A 50W 18MHz | 2SC3456 SI-N 1100/800V 1.5A 40W2SC3457 SI-N 1100V 3A 50W | 2SC3460 SI-N 1100V 6A 100W 2SC3461 SI-N 1100/800V 8A 120W | 2SC3466 SI-N 1200/650V 8A 120W2SC3467 SI-N 200V 0.1A 1W 150MHz | 2SC3468 SI-N 300V 0.1A 1W 150MHz2SC3486 SI-N 1500V 6A 120W | 2SC3502 SI-N 200V 0.1A 1.2W2SC3503 SI-N 300V 0.1A 7W 150MHz | 2SC3504 SI-N 70V 0.05A 0.9W 500MHz2SC3505 SI-N 900V 6A 80W | 2SC3507 SI-N 1000/800V 5A 80W2SC3509 N-DARL+D 900V 10A 100W 0. | 2SC3514 SI-N 180V 0.1A 10W 200MHz2SC3518 SI-N 60V 5A 10W | 2SC3520 SI-N 500V 18A 130W 18MHz2SC3526 SI-N 110V 0.15A 7A 30W 1us | 2SC3528 SI-N 500V 20A 125W2SC3549 SI-N 900V 3A 40W | 2SC3552 SI-N 1100V 12A 150W 15MHz2SC3568 SI-N 150V 10A 30W | 2SC3571 SI-N 500V 7A 30W 2SC3577 SI-N 850V 5A 80W 6MHz | 2SC3581 SI-N 55V 0.4A 0.9W 150MHz2SC3591 SI-N 400V 7A 50W | 2SC3595 SI-N 30V 0.5A 5W2SC3596 SI-N 80V 0.3A 8W 700MHz | 2SC3597 SI-N 80V 0.5A 10W 800MHz2SC3599 SI-N 120V 0.3A 8W 500MHz | 2SC3600 SI-N 200V 0.1A 7W 400MHz2SC3601 SI-N 200V 0.15A 7W 400MHz | 2SC3608 SI-N 20V 0.08A 6.5GHz2SC3611 SI-N 50V 0.15A 4W 300MHz | 2SC3616 SI-N 25V 0.7A250MHz2SC3621 SI-N 150V 1.5A 10W 100MHz | 2SC3623 SI-N 60V 0.15A 0.25W B=1K2SC3632 SI-N 600V 1A 10W 30MHz | 2SC3636 SI-N 900/500V 7A 80W2SC3642 SI-N 1200V 6A 100W 200ns | 2SC3655 SI-N 50V 0.1A0.4W 46/23K2SC3656 SI-N 50V 0.1A 0.4W 10K/10 | 2SC3659 SI-N+D 1700/800V 5A 50W2SC3668 SI-N 50V 2A 1W 100MHz | 2SC3669 SI-N 80V 2A 1W 0.2us2SC3675 SI-N 1500/900V 0.1A 10W | 2SC3678 SI-N 900V 3A 80W2SC3679 SI-N 900/800V 5A 100W | 2SC3680 SI-N 900/800V 7A 120W 6MHz2SC3684 SI-N+D 1500V 10A 150W | 2SC3688 SI-N 1500V 10A 150W 0.2us2SC3692 SI-N 100V 7A 30W <300/180 | 2SC373 SI-N 35V 0.1A 0.2W B>2002SC3746 SI-N 80V 5A 20W 100MHz | 2SC3748 SI-N 80V 10A30W 100/600ns2SC3752 SI-N 1100/800V 3A 30W | 2SC3781 SI-N 120V 0.4A 15W 500MHz2SC3782 SI-N 200V 0.2A 15W 400MHz | 2SC3783 SI-N 800V 5A100W2SC3787 SI-N 180V 0.14A 10W 150MHz | 2SC3788 SI-N 200V 0.1A 5W 150MHz2SC3789 SI-N 300V 0.1A 7W 70MHz | 2SC3790 SI-N 300V 0.1A 7W 150MHz2SC3792 SI-N 50V 0.5A 0.5W 250MHz | 2SC3795A SI-N 900V 5A2SC3807 SI-N 30V 2A 15W 260MHz | 2SC3808 N-DARL 80V 2A 170MHz B>802SC380TM SI-N 30V 50mA 0.3W 100MHz | 2SC3811 SI-N 40V 0.1A 0.4W 450MHz2SC3831 SI-N 500V 10A 100W | 2SC3833 SI-N 500/400V 12A 100W2SC3842 SI-N 600V 10A 70W 32MHz | 2SC3844 SI-N 600V 15A75W 30MHz2SC3851 SI-N 80V 4A 25W 15MHz | 2SC3852 SI-N 80V 3A 25W 15MHz2SC3855 SI-N 200V 10A 100W 20MHz | 2SC3857 SI-N 200V 15A 150W 20MHz2SC3858 SI-N 200V 17A 200W 20MHz | 2SC3866 SI-N 900V 3A 40W2SC3868 SI-N 500V 1.5A 25W 0.7us | 2SC3883 SI-N+D 1500V 6A 50W2SC3884A SI-N 1500V 6A 50W | 2SC3886A SI-N 1500V 8A50W 0.1us2SC388A SI-N 25V 50mA 0.3W 300MHz | 2SC3890 SI-N 500V 7A30W 500NS2SC3892A SI-N+D 1500V 7A 50W 0.4us | 2SC3893A SI-N+D 1500V8A 50W2SC3895 SI-N 1500/800V 8A 70W | 2SC3896 SI-N 1500V 8A 70W2SC3897 SI-N 1500V 10A 70W | 2SC3902 SI-N 180V 1.5A 10W 120MHz2SC3907 SI-N 180V 12A 130W 30MHz | 2SC3927 SI-N 900V 10A 120W2SC394 SI-N 25V 0.1A 200MC RF | 2SC3940 SI-N 30V 1A 1W 200MHz2SC3943 SI-N 110V 0.15A 2W 300MHz | 2SC3944 SI-N 150V 1A 40W 300MHz2SC3948 SI-N 850V 10A 75W 20MHz | 2SC3950 SI-N 30V 0.5A 5W2SC3952 SI-N 80V 0.5A 10W 700MHz | 2SC3953 SI-N 120V 0.2A 8W 400MHz2SC3954 SI-N 120V 0.3A 8W 400MHz | 2SC3955 SI-N 200V 0.1A 7W 300MHz2SC3956 SI-N 200V 0.2A 7W 70MHz | 2SC3964 SI-N 40V 2A 1.5W2SC3972 SI-N 800/500V 5A 40W | 2SC3973A SI-N 900V 7A 45W2SC3979A SI-N 800V 3A 2W 10MHz | 2SC3987 N-DARL+D 50V 3A 15W2SC3996 SI-N 1500/800V 15A 180W | 2SC3998 SI-N 1500V25A 250W POWER2SC3999 SI-N 300V 0.1A 0.75W 300MHz | 2SC4004 SI-N 900/800V 1A 30W <1/42SC4020 SI-N 900V 3A 50W 1us | 2SC4024 SI-N 100V 10A 35W B>3002SC4029 SI-N 230V 15A 150W 30MHz | 2SC4043 SI-N 20V 50mA 0.15W 3.2GHz2SC4046 SI-N 120V 0.2A 8W 350MHz | 2SC4052 SI-N 600V 3A 40W 20MHz2SC4056 SI-N 600V 8A 45W | 2SC4059 SI-N 600/450V 15A 130W2SC4064 SI-N 50V 12A 35W 40MHz | 2SC4107 SI-N 500/400V 10A 60W2SC4119 N-DARL+D 1500V 15A 250W B | 2SC4123 SI-N+D 1500V 7A 60W2SC4125 SI-N+D 1500/800V 10A 70W | 2SC4131 SI-N 100V 15A60W 18MHz2SC4135 SI-N 120V 2A 15W 200MHz | 2SC4137 SI-N 25V 0.1A300MHz2SC4138 SI-N 500V 10A 80W <1/3.5us | 2SC4153 SI-N 200V 7A 30W 0.5us2SC4157 SI-N 600V 10A 100W | 2SC4159 SI-N 180V 1.5A 15W 100MHz2SC4161 SI-N 500V 7A 30W | 2SC4169 N-DARL+D 50V 1.2A 1W B=4K2SC4199 SI-N 1400V 10A 100W | 2SC4200 SI-N 20V 0.6A 5W 2.5GHz2SC4204 SI-N 30V 0.7A 0.6W | 2SC4231 SI-N 1200/800V 2A30W2SC4235 SI-N 1200/800V 3A 80W | 2SC4236 SI-N 1200/800V 6A 100W2SC4237 SI-N 1200/800V 10A 150W | 2SC4242 SI-N 450/400V 7A2SC4256 SI-N 1500V 10A 175W 6MHz | 2SC4278 SI-N 150V 10A 100W 30MHz2SC4288A SI-N1600/600V 12A 200W | 2SC4289A SI-N 1500V 16A 200W2SC4290A SI-N 1500V 20A 200W | 2SC4297 SI-N 500V 12A 75W 10MHz2SC4298 SI-N 500V 15A 80W 10MHz | 2SC4300 SI-N 900V 5A 75W 1/6us2SC4304 SI-N 800V 3A 35W | 2SC4308 SI-N 30V 0.3A 0.6W 2.5GHz2SC4313 SI-N 900V 10A 100W 0.5us | 2SC4381 SI-N 150V 2A 25W 15MHz2SC4382 SI-N 200V 2A 25W 15MHz | 2SC4386 SI-N 160/120V 8A 75W 20MHz2SC4387 SI-N 200V 10A 80W 20MHz | 2SC4388 SI-N 200V 15A85W 20MHz2SC4408 SI-N 80V 2A 0.9W 100/600ns | 2SC4429 SI-N 1100/800V 8A 60W2SC4430 SI-N 1100V 12A 65W 15MHz | 2SC4431 SI-N 120V 1.5A 20W 150MHz2SC4439 SI-N 180V 0.3A 8W 400MHz | 2SC4467 SI-N 160/120V 8A 80W 20MHz2SC4468 SI-N 200V 10A 80W 20MHz | 2SC4484 SI-N 30V 2.5A 1W 250MHz2SC4488 SI-N 120V 1A 1W 120MHz | 2SC4511 SI-N 120V 6A 30W 20MHz2SC4512 SI-N 120V 6A 50W 20MHz | 2SC4517 SI-N 900V 3A 30W 6MHz2SC4517A SI-N 1000V 3A 30W 0.5us | 2SC4531 SI-N+D 1500V 10A 50W2SC4532 SI-N 1700V 10A 200W 2uS | 2SC4538 SI-N 900V 5A 80W2SC454 SI-N 30V 0.1A 230MHz | 2SC4542 SI-N 1500V 10A 50W2SC4547 N-DARL+D 85V 3A 30W B>2K | 2SC4557 SI-N 900V 10A 80W <1/5.5us2SC4560 SI-N 1500V 10A 80W | 2SC458 SI-N 30V 0.1A 230MC UNI0.2W 230MHz2SC461 SI-N 30V 0.1A 0.2W 230MHz | 2SC4744 SI-N 1500V 6A POWER2SC4745 SI-N 1500V 6A | 2SC4747 SI-N 1500V 10A 50W0.3us2SC4758 SI-N 1500V 8A 50W HI-RES | 2SC4769 SI-N+D 1500V 7A 60W2SC4770 SI-N 1500/800V 7A 60W | 2SC4793 SI-N 230V 1A 2W 100MHz2SC4804 SI-N 900V 3A 30W 0.3us | 2SC4820 SI-N 450V 6A 30W 12MHz2SC4826 SI-N 200V 3A 1.3W 300MHz | 2SC4834 SI-N 500V 8A 45W <0.3/1.42SC4883A SI-N 180V 2A 20W 120MHz | 2SC4891 SI-N 1500V 15A 75W2SC4908 SI-N 900V 3A 35W 1us | 2SC4924 SI-N 800V 10A70W2SC4977 SI-N 450V 7A 40W | 2SC5002 SI-N 1500V 7A 80W 2SC5003 SI-N+D 1500V 7A 80W | 2SC5027 SI-N 1100V 3A 50W 0.3us2SC5030 SI-N 50V 5A 1.3W 150MHz | 2SC5045 SI-N 1600V 15A75W2SC5047 SI-N 1600V 25A 250W | 2SC5048 SI-N 1500V 12A 50W 0.3us2SC5070 SI-N 30V 2A 1.5W B>800 | 2SC5086 SI-N 20V 80MA 7GHZ2SC509 SI-N 35V 0.5A 0.6W 60MHz | 2SC5144 SI-N 1700V 20A 200W2SC5148 SI-N 1500V 8A 50W 0.2us | 2SC5149 SI-N+D 1500V 8A 50W 0.2us2SC5150 SI-N 1700V 10A 50W 03us | 2SC5171 SI-N 180V 2A 20W 200MHz2SC5198 SI-N 140V 10A 100W 30MHz | 2SC5207 SI-N 1500V 10A 50W 0.4us2SC5242 SI-N 230V 15A 130W 30MHz | 2SC5244A SI-N 1600V 30A 200W2SC5296 SI-N+D 1500V 8A 60W | 2SC5297 SI-N 1500V 8A 60W0.1W 0.700M2SC536 SI-N 40V 0.1A 180MC UNI | 2SC620 SI-N 50V 0.2A 0.25W UNI2SC643 SI-N 1100V 2.5A 50W | 2SC644 SI-N 30V 50mA 0.25W2SC645 SI-N 30V 30mA 0.14W 200MHz | 2SC710 SI-N 30V 0.03A 200MHz2SC711 SI-N 30V 0.05A 150MHz | 2SC712 SI-N 30V 0.5A150MHz2SC717 SI-N 30V 50mA 0.2W 600MHz | 2SC730 SI-N 40V 0.4APQ=1.5W2SC732 SI-N 50V 0.15A 0.4W 150MHz | 2SC735 SI-N 35V 0.4A 0.3W UNI2SC752 SI-N 15V 100mA 0.1W | 2SC756 SI-N 40V 4A 10W65MHz2SC784 SI-N 40V 0.02A 500MC RF | 2SC815 SI-N 60V 0.2A 0.25W 200MHz2SC828 SI-N 30V 0.05A 0.25W UNI | 2SC829 SI-N 30V 30mA 0.4W 230MHz2SC839 SI-N 50V 0.03A 250MHz | 2SC867 SI-N 400V 1A 23W 8MHz2SC869 SI-N 160V 30mA 0.2W 150MHz | 2SC898A SI-N 150V 7A80W 15MHz2SC900 SI-N 30V 0.03A 100MHz | 2SC930 SI-N 15V 0.03A300MC RF2SC936 SI-N 1000V 1A 22W POWER | 2SC941 SI-N 35V 20mA 0.2W 120MHz2SC943 SI-N 60V 0.2A 0.3W 220MHz | 2SC945 SI-N 50V 0.1A 250MC UNI2SC982 N-DARL 40V 0.3A 0.4W。

2SC2235中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」

• 虽然东芝的作品不断地提高产品的质量和可靠性,产品会发生故障或失败.顾客是负责符合安全标准,并用于提供适当的设计和保障其硬件,软件和这最大限度地降低风险,并避免出现在产品的故障或失效可能导致生命损失,身体系统人身伤害或财产损失,包括数据丢失或损坏.在客户使用的产品,创造设计包括产品,或者将产品变成自己的应用程序,用户还必须参考和符合（一）中的所有相关东芝信息的最新版本,包括但不限于本文件,规格,数据表和应用笔记产品和中所规定的“东芝半导体可靠性手册”等预防措施及条件（b）与该产品将用于与或应用程序的说明.客户全权负责自己的产品设计和应用的所有方面, 包括但不限于：（一）决定采用在这样的设计还是应用此产品的适当性; （b）评价和确定本文档中包含的任何信息的适用性,或图表, 图表,程序,算法,示例应用电路,或任何其他引用文件; （三）验证了这样的设计和应用的所有工作参数.
芯片中文手册,看全文,戳
东芝晶体管
音频功率放大器应用驱动级放大器的应用
硅NPN外延型（厘进程）
2SC2235
2SC2235
单位：mm
• 为了补充2SA965.
绝对最大额定值
（TA = 25°C）
特点
符
评级
Unit
集电极基极电压
集电极 - 发射极电压
发射极基极电压集电极电流基极电流集电极耗散功率结温存储温度范围
100 ms*
10 ms*
50
30 Collector current I
*: Single nonrepetitive 10
pulse Ta = 25°C
5 Curves must be derated
3 linearly with increase in

2SC4331中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」

并非所有产品和 /或型号都向每个国家供应 .请向本公司销售代表可用性和其他信息 .
与标记 r表示主要修改点 . 现场：修订部分可以通过在 PDF文件中复制一个 "R",并在 "查找内容 "指定它可以很容易地搜索 .
2002
芯片中文手册,看全文,戳
电气特性（T
参数集电极到发射极电压集电极到发射极电压
s
0.4
s
基极电流波形
集电极电流波形
2
Data Sheet D16136EJ3V0DS
芯片中文手册,看全文,戳
典型特征（T
A = 25°C)
2SC4331,4331-Z
(W)
总容许损耗P
环境温度T
(°C)
(A) 集电极电流I
集电极到发射极电压V
(V)
功率降额dT（％）
案例温度T
L 150至300
K 200至400
切换时间（T
on , t stg , t f）测试电路
2SC4331,4331-Z
MIN. TYP. MAX. 单元
100
V
100
V
10
A
1.0
mA
10
A
1.0
mA
10
A
100
100 200 400
60
0.3
V
0.5
V
1.2
V
1.5
V
60
pF
150
MHz
0.3
s
1.5
8. 你应该使用由瑞萨电子所指定范围内本文档中描述瑞萨电子产品,特别是相对于所述最大额定值,操作电源电压范围,移动电源电压范围,热辐射特性,安装和其它产品特性.瑞萨电子有权对因使用瑞萨电子产品除这些特定范围故障或损坏不承担任何责任.

2SC2412中文资料

2SC2412中文资料Transistors 2SC5658 / 2SC1740SGeneral purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /2SC1740S!Features 1) Low Cob.Cob=2.0pF (Typ.)2) Complements the 2SA1037AK /2SA1576A / 2SA1774H /2SA2029 / 2SA933AS.!StructureEpitaxial planar type NPN silicon transistor!External dimensions (Units : mm)* Denotes h FE!Absolute maximum (T a=25°C)Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector powerdissipationJunction temperature Storage temperatureParameterV CBO V CEO V EBO P CTj Tstg60V V V AW °C °C 5070.15I C0.20.150.32SC2412K, 2SC40812SC1740S 2SC4617, 2SC5658150?55~+150Symbol Limits UnitTransistors 2SC5658 / 2SC1740S!Electrical characteristics (T a=25°C)Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitanceParameterSymbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)f T CobMin.60507??12018020.10.15600.4?3.5V I C =50μA I C =1mA IE =50μA V CB =60V V EB =7VV CE =6V, I C =1mA I C /I B =50mA/5mAV CE =12V, I E =?2mA, f=100MHz V CE =12V, I E =0A, f=1MHzV V μA μA ?V MHz pFTyp.Max.Unit ConditionsTransition frequency !Packaging specifications and h FEh FE values are classified as follows :Item Q R S h FE120~270180~390270~560!Electrical characterristic curvesFig.1 Grounded emitter propagation characteristics C O L L E C T O R C U R R E N T : I C (m A )BASE TO EMITTER VOLTAGE : V BE (V)Fig.2 Grounded emitter output characteristics ( Ι )C O L L E C T O R C U R R E N T : I C (m A ) COLLECTOR TO EMITTER VOLTAGE : V CE (V) C O L L E C T O R C U R R E N T : I C (m A ) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ )Transistors2SC5658 / 2SC1740SFig.4 DC current gain vs. collector current ( Ι )D C C U R RE N T G A I N: h F ECOLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs.collector current ( ΙΙ )D C C U R R E N T G A I N : h F ECOLLECTOR CURRENT : I C (mA)Fig. 6 Collector-emitter saturationvoltage vs. collector currentC O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA) Fig.8 Collector-emitter saturationvoltage vs. collector current (ΙΙ)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.9 Gain bandwidth product vs.emitter currentEMITTER CURRENT : I E (mA)T R A N S I T I O N F R E Q U E N C Y : f T (M H z )Fig.10 Collector output capacitance vs.collector-base voltageEmitter input capacitance vs.emitter-base voltageCOLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)C O L L E C T O R O U T P U T C A P A CI T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )Fig.11 Base-collector time constantvs. emitter currentB A S EC O L L E C T O R T I M E C O N S T A N T : C c ·r b b (p s )EMITTER CURRENT : I E (mA)。

晶体管手册

14 Ic(mA)
12 Ic(mA)
11 Ic(mA)
75 Ic(A)
35 Ic(mA)
20 Ic(mA)
3 Icbo(μA) 50 hfe
0 Icbo(μA)
0 Icbo(μA) 0 Icbo(μA) 50 Icbo(μA) 50 Icbo(μA) 20 Icbo(μA) 50 Icbo(μA) 50 Icbo(μA) 3 Icbo(μA) 1 Icbo(μA) 3 Icbo(mA) 15 Icbo(mA)
2SC1791 松下
14 Ic(mA) 25 Ic(mA)
20 Ic(mA) 20 Ic(mA)
45 Ic(mA)
60 Ic(mA) 25 Ic(mA)
30 Ic(mA)
60 Pc(mW)
30 Ic(mA)
14 Ic(mA) 18 Ic(mA) 20 Ic(mA)
6 Ic(mA)
8 Ic(mA) 20 Ic(mA) 30 Ic(mA) 25 Ic(mA) 40 Ic(mA) 17 Ic(A) 12 Ic(mA) 14 Ic(mA)
-30 Icbo(μA)
0
0
-0.1
2SA1229 日电
-12 Ic(mA)
-50 hfe
20
90
200
2SA1245 东芝
-8 Ic(mA)
-30 hfe
20
0
0
2SA1254 松下 2SA1256 三洋
-20 Ic(mA) -20 Ic(mA)
-30 Iceo(μA)
0
0
100
-30 hfe
60
-30 Icbo(μA) -300 Icbo(μA)
-30 Icbo(uA) -50 Iebo(μA) -30 Icbo(μA) -30 Icbo(uA) -200 Icbo(μA) -50 hfe