BFR30LT1G中文资料 - 360文档中心

MBR230LSFT1G中文资料

MBR230LSFT1Surface MountSchottky Power RectifierPlastic SOD-123 PackageThis device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. I deally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size,it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers,PDAs and PCMCI A cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.Features•ăGuardring for Stress Protection •ăLow Forward V oltage•ă125°C Operating Junction Temperature •ăEpoxy Meets UL 94 V-0•ăPackage Designed for Optimal Automated Board Assembly •ăESD Ratings:Machine Model, CHuman Body Model, 3B•ăThis is a Pb-Free DeviceMechanical Characteristics•ăReel Options: MBR230LSFT1 = 3,000 per 7 in reel/8 mm tapeā•ăDevice Marking: L3N•ăPolarity Designator: Cathode Band •ăWeight: 11.7 mg (approximately)•ăCase: Epoxy, Molded•ăLead Finish: 100% Matte Sn (Tin)•ăLead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds•ăDevice Meets MSL 1 RequirementsPreferred devices are recommended choices for future use and best overall value.DevicePackageShipping †ORDERING INFORMATION†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MBR230LSFT1G SOD-123FL(Pb-Free)3000/Tape & ReelMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R30VAverage Rectified Forward Current (At Rated V R, T L = 105°C)I O 2.0A Peak Repetitive Forward Current(At Rated V R, Square Wave, 100 kHz, T L = 95°C)I FRM 4.0ANon-Repetitive Peak Surge Current(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)I FSM40A Storage Temperature T stg-55 to 150°C Operating Junction Temperature T J-55 to 125°C Voltage Rate of Change (Rated V R, T J = 25°C)dv/dt10,000V/m s THERMAL CHARACTERISTICSThermal Resistance, Junction-to-Lead (Note 1) Thermal Resistance, Junction-to-Lead (Note 2) Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance, Junction-to-Ambient (Note 2)R tjlR tjlR tjaR tja262132582°C/WStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Mounted with minimum recommended pad size, PC Board FR4.2.Mounted with 1 in. copper pad (Cu area 700 mm2).ELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 3)V F T J = 25°C T J = 100°C V(I F = 1.0 A) (I F = 2.0 A)0.380.430.300.37Maximum Instantaneous Reverse Current (Note 3)I R T J = 25°C T J = 100°C mA (V R = 30 V) 1.0253.Pulse Test: Pulse Width ≤ 250 m s, Duty Cycle ≤2%.TYPICAL CHARACTERISTICSFigure 3. Typical Reverse Current Figure 4. Maximum Reverse Current1010.1I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)I R , R E V E R S E C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)I R ,I O , A V E R A G E F O R W A R D C U R R E N T (A M P S )T L , LEAD TEMPERATURE (°C)Figure 5. Current Derating1.400.6P F O , A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )0.20.41.20.81.0I O , AVERAGE FORWARD CURRENT (AMPS)1.6Figure 6. Forward Power DissipationTYPICAL CHARACTERISTICSFigure 7. CapacitanceFigure 8. Typical Operating TemperatureDeratingV R , REVERSE VOLTAGE (VOLTS)101000C , C A P A C I T A N C E (p F )V R , DC REVERSE VOLTAGE (VOLTS)1151059585756570125T J , D E R A T E D O P E R A T I N G T E M P E R A T U R E (°C )1001101009080120r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EFigure 9. Thermal Response10000.10.00001t 1, TIME (sec)0.00010.0010.011101000.0000010.1PACKAGE DIMENSIONSSOD-123LF CA SE 498-01ISSUE A*For additional information on our Pb-Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*cNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.4.DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.DIM A MIN NOM MAX MINMILLIMETERS0.900.95 1.000.035INCHES A10.000.050.100.000b 0.700.90 1.100.028c 0.100.150.200.004D 1.50 1.65 1.800.059E 2.50 2.70 2.900.098L 0.550.750.950.0220.0370.0390.0020.0040.0350.0430.0060.0080.0650.0710.1060.1140.0300.037NOM MAX 3.40 3.60 3.800.1340.1420.150H E --0°8°0°8°qǒmm inchesǓON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

MMBFJ177LT1G;MMBFJ177LT1;中文规格书,Datasheet资料

© Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 51Publication Order Number:MMBFJ177LT1/DMMBFJ177LT1GJFET ChopperP−Channel − DepletionFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGSRating Symbol Value Unit Drain−Gate Voltage V DG25Vdc Reverse Gate−Source Voltage V GS(r)−25Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICSTotal Device Dissipation FR−5 Board(Note 1)T A = 25°CDerate above 25°C P D2251.8mWmW/°CThermal Resistance, Junction−to−AmbientR q JA556°C/W Junction and Storage Temperature T J, T stg−55 to +150°C 1.FR−5 = 1.0 0.75 0.062 in.MARKING DIAGRAMSOT−23 (TO−236AB)CASE 318−08STYLE 103GATE1 DRAINDevice Package Shipping†ORDERING INFORMATIONMMBFJ177LT1G SOT−23(Pb−Free)3000 Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.16Y M GG6Y= Specific Device CodeM= Date Code*G= Pb−Free Package*Date Code orientation and/or overbar mayvary depending upon manufacturing location.(Note: Microdot may be in either location)2ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSGate −Source Breakdown Voltage (V DS = 0, I D = 1.0 m Adc)V (BR)GSS 30−Vdc Gate Reverse Current (V DS = 0 Vdc, V GS = 20 Vdc)I GSS − 1.0nAdc Gate Source Cutoff Voltage (V DS = 15 Vdc, I D = 10 nAdc)V GS(off)0.82.5VdcON CHARACTERISTICSZero −Gate −V oltage Drain Current (V GS = 0, V DS = 15 Vdc) (Note 2)I DSS 1.520mAdc Drain Cutoff Current (V DS = 15 Vdc, V GS = 10 Vdc)I D(off)− 1.0nAdc Drain Source On Resistance (I D = 500 m Adc)r DS(on)−300W Input CapacitanceV DS = 0, V GS = 10 Vdcf = 1.0 MHzC iss −11pFReverse Transfer CapacitanceC rss−5.52.Pulse Test: Pulse Width < 300 m s, Duty Cycle ≤ 2%.TYPICAL CHARACTERISTICSFigure 1. Drain Current vs. Drain −SourceVoltageFigure 2. Reverse Transfer CapacitanceV DS , DRAIN −SOURCE VOLTAGE (V)V DS , DRAIN −SOURCE VOLTAGE (V)Figure 3. Input CapacitanceV DS , DRAIN −SOURCE VOLTAGE (V)I D , D R A I N C U R R E N T (m A )C r s s , R E V E R S E T R A N S F E R C A P A C I T A N C E (p F )C i s s , I N P U T C A P A C I T A N C E (p F )PACKAGE DIMENSIONSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q°°°°SOT −23 (TO −236AB)CASE 318−08ISSUE AP*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1STYLE 10:PIN 1.DRAIN2.SOURCE3.GATEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBFJ177LT1G MMBFJ177LT1。

智能数字压力校验仪

新品发布NEW PRODUCTS 智能数字压力校验仪Fluke 730G智能数字压力校验仪，自带H A R T通信功能，搭配压力校验泵，实现对压力表、压力开关、压力变送器的高效、精确的测量和校验,为计量研究院和企业建立压力实验室的专业人员提供真正得心应手的极致体验。

全新的Fluke 730G智能数字压力校验仪，以其出众的操作体验，大大优化测试和测量Test & Measurement EN50121-3-2电磁辐射标准和EN50155安规标准。

50W的RDF50系列是四分之一砖大小，提供超宽的14～160V的12:1 D C输入范围，有5，12，24和48V四个单输出模块可选。

100W的RDL100系列和300W的R D H300系列是工业标准的半砖大小：R D L100系列提供66～160V的3:1输入范围，有12，15，24和48V四个单输出模块可选；R D H300系列提供43～160V的4:1输入范围，有5，12，24，28和48V五个单输出模块可选。

功率最高的系列是600W的R D H600系列，是一款全砖大小的产品，输入范围为43～160V，有12，24，28和48V四个单输出模块可选。

这些产品的其他主要性能包括：远程开/关，低功率输出开关控制；低空载能力，待机时功率损耗最小化。

XP Power ADI ...............................28，66Ampleon ..................................60Arm ......................................63ams ......................................60赛普拉斯 ...................................63Diodes Incorporated ....................................66福禄克 ..................................70Holtek ................................60HARTING ...............................64是德科技 .................................70Keyssa .. (70)Littelfuse .......................................65Lattice Semiconductor .. (37)Melexis ..................................61Maxim Integrated ..........................35美光科技 ......................................63Microchip Technology .. (26)Molex . (63)NI (71)ON ...................................61ROHM .............................62，67Renesas ...................................67Silicon Labs (72)Semtech ..................................67STMicroelectronics ..............64，68，72厂商索引新品发布 NEW PRODUCTS 今日电子 · 2018年6月 · 701080p/60帧无压缩DisplayPort视频间进行切换。

MMBF4391LT1G中文资料

MMBF4391LT1,MMBF4392LT1,MMBF4393LT1JFET Switching Transistors N−ChannelFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSTHERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.SOT−23CASE 318STYLE 10MARKINGDIAGRAMxx M1232 SOURCE3GATE1 DRAINxx= Specific Device CodeM= Date CodeSee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSee specific marking information in the device marking section on page 2 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS ORDERING INFORMATIONSpecifications Brochure, BRD8011/D.TYPICAL CHARACTERISTICS, T U R N −O N D E L A Y T I M E (n s )d (o n )t I D , DRAIN CURRENT (mA), T U R N −O F F D E L A Y T I M E (n s )d (o f f )t Figure 3. Turn−Off Delay TimeI D , DRAIN CURRENT (mA)Figure 4. Fall Time5.02.020101.0501002005001000Figure 5. Switching Time Test CircuitFigure 6. Typical Forward Transfer AdmittanceFigure 7. Typical CapacitanceI D , DRAIN CURRENT (mA)2.05.03.07.01020, F O R W A R D T R A N S F E R A D M I T T A N C E (m m h o s )f s V 102.0153.05.07.0V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )OUTPUTr t f ≤ 0.5 nsPULSE WIDTH = 2.0 m s DUTY CYCLE ≤ 2.0%R D’ = R D (R T + 50)R D + R T + 50Figure 8. Effect of Gate−Source Voltageon Drain−Source Resistance V GS , GATE−SOURCE VOLTAGE (VOLTS)r Figure 9. Effect of Temperature on Drain−SourceOn−State Resistance, D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (N O R M A L I Z E D )T channel , CHANNEL TEMPERATURE (°C)1.51.0r , D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (O H M S )NOTE 1The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply V oltage (−V GG ). The Drain−Source V oltage (V DS ) is slightly lower than Drain Supply V oltage (V DD ) due to the voltage divider. Thus Reverse Transfer Capacitance (C rss ) of Gate−Drain Capacitance (C gd ) is charged to V GG + V DS .During the turn−on interval, Gate−Source Capacitance (C gs )discharges through the series combination of R Gen and R K . C gd must discharge to V DS(on) through R G and R K in series with the parallel combination of effective load impedance (R’D ) and Drain−Source Resistance (r DS ). During the turn−off, this charge flow is reversed.Predicting turn−on time is somewhat difficult as the channel resistance r DS is a function of the gate−source voltage. While C gs discharges, V GS approaches zero and r DS decreases. Since C gd discharges through r DS , turn−on time is non−linear. During turn−off, the situation is reversed with r DS increasing as C gd charges. The above switching curves show two impedance conditions;1) R K is equal to R D’ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) R K = 0 (low impedance) the driving source impedance is that of the generator.Figure 10. Effect of I DSS on Drain−Source Resistance and Gate−Source VoltageI DSS , ZERO−GATE VOLTAGE DRAIN CURRENT (mA), D R A I N −S O U R C E O N −S T A T E D S (o n )r 2010304050304050607020R E S I S T A N C E (O H M S )1001.02.03.04.05.0, G A T E −S O U R C E V O L T A G E G S V (V O L T S )6.07.08.09.010706080901008090100110120130140150NOTE 2The Zero−Gate−V oltage Drain Current (I DSS ) is the principle determinant of other J−FET characteristics.Figure 10 shows the relationship of Gate−Source Off V oltage (V GS(off)) and Drain−Source On Resistance (r DS(on)) to I DSS . Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknownr DS(on) and V GS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an I DSS range of 25 to 75 mA. Figure 10 shows r DS(on) = 52 Ohms for I DSS = 25 mA and 30Ohms for I DSS = 75 mA. The corresponding V GS values are 2.2 V and 4.8 V .PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AJ*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1STYLE 10:PIN 1.DRAIN2.CSOURCE3.GATEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

MMBT4401LT1G;MMBT4401LT3G;MMBT4401LT1;中文规格书,Datasheet资料

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant•AEC−Q101 Qualified and PPAP Capable•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change RequirementsMAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO40Vdc Collector−Base Voltage V CBO60Vdc Emitter−Base Voltage V EBO 6.0Vdc Collector Current − Continuous I C600mAdc Collector Current − Peak I CM900mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) @T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate (Note 2) @T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*Transient pulses must not cause the junction temperature to be exceeded.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23 (TO−236)CASE 318STYLE 6COLLECTOR12EMITTER*Date Code orientation and/or overbar mayvary depending upon manufacturing location.12X M GG2X= Specific Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONMMBT4401LT3G SOT−23(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.MMBT4401LT1GSMMBT4401LT1GSOT−23(Pb−Free)3000 / Tape &Reel10,000 / Tape &ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I B = 0)V (BR)CEO 40−Vdc Collector −Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0)V (BR)CBO 60−Vdc Emitter −Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0)V (BR)EBO 6.0−Vdc Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc)I BEV −0.1m Adc Collector Cutoff Current(V CE = 35 Vdc, V EB = 0.4 Vdc)I CEX−0.1m AdcON CHARACTERISTICS (Note 3)DC Current Gain(I C = 0.1 mAdc, V CE = 1.0 Vdc)(I C = 1.0 mAdc, V CE = 1.0 Vdc)(I C = 10 mAdc, V CE = 1.0 Vdc)(I C = 150 mAdc, V CE = 1.0 Vdc)(I C = 500 mAdc, V CE = 2.0 Vdc)h FE20408010040−−−300−−Collector −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V CE(sat)−−0.40.75VdcBase −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V BE(sat)0.75−0.951.2VdcSMALL −SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)f T 250−MHz Collector −Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C cb − 6.5pF Emitter −Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C eb −30pF Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h ie 1.015k W Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h re 0.18.0X 10−4Small −Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h fe 40500−Output Admittance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe1.030m mhosSWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc,IC = 150 mAdc, I B1 = 15 mAdc)t d−15nsRise Time t r −20Storage Time (V CC = 30 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc)t s −225nsFall Timet f−303.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.Figure 1. Turn −On Time Figure 2. Turn −Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSFigure 3. Charge DataI C , COLLECTOR CURRENT (mA)Q , C H A R G E (n C )2.03.05.07.0101.00.10.70.5Figure 4. Turn −On Time IC , COLLECTOR CURRENT (mA)2030505.0107.0Figure 5. Rise and Fall TimesI C , COLLECTOR CURRENT (mA)Figure 6. Storage Time I C , COLLECTOR CURRENT (mA)Figure 7. Fall TimeI C , COLLECTOR CURRENT (mA)25°C100°CTRANSIENT CHARACTERISTICS0.30.2t s , S T O R A G E T I M E (n s )′t , T I M E (n s )t , T I M E (n s )t f , F A L L T I M E (n s )701002030505.0107.0701001002003070503006.08.04.02.0Figure 8. Frequency Effects f, FREQUENCY (kHz)SMALL −SIGNAL CHARACTERISTICS NOISE FIGUREV CE = 10 Vdc, T A = 25°C; Bandwidth = 1.0 HzN F , N O I S E F I G U R E (d B )10N F , N O I S E F I G U R E (d B )Figure 9. Source Resistance EffectsR S , SOURCE RESISTANCE (OHMS)h PARAMETERSV CE = 10 Vdc, f = 1.0 kHz, T A = 25°CThis group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high −gain and a low −gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.h i e , I N P U T I M P E D A N C E (O H M S )Figure 10. Input ImpedanceI C , COLLECTOR CURRENT (mA)50 k 50020 k 10 k 5.0 k2.0 k1.0 k Figure 11. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)10Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)7.05.03.02.01.00.70.50.3h , O U T P U T A D M I T T A N C E ( m h o s )o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e m -4Figure 13. DC Current GainI C , COLLECTOR CURRENT (A)Figure 14. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.20.2V , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )0CE 0.001502503005000.01h , D C C U R R E N T G A I N0.101F E 400Figure 15. Collector −Emitter SaturationVoltage vs. Collector CurrentI C , COLLECTOR CURRENT (A)0.150.200.300.350.05Figure 16. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (V )0.010.10- 0.50- 1.0- 1.5- 2.010.0001C O E F F I C I E N T (m V /C )°- 2.50.010.11.01101001502003504500.0010.100.25100Figure 17. Base −Emitter Saturation Voltage vs.Collector CurrentFigure 18. Base −Emitter Turn On Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (A)I C , COLLECTOR CURRENT (A)V B E (s a t ), B A S E −E M I T T E R S A T U R A -T I O N V O L T A G E (V )V B E (o n ), B A S E −E M I T T E R T U R N O N V O L T A G E (V )Figure 19. Input Capacitance vs. Emitter BaseVoltage Figure 20. Output Capacitance vs. CollectorBase VoltageV eb , EMITTER BASE VOLTAGE (V)V cb , COLLECTOR BASE VOLTAGE (V)63210911131519215030251001.52.53.54.56.58.5C i b o , I N P U T C A P A C I T A NC E (p F )C o bo , O U T P U T C A P A C I T A N C E (p F )17 5.545515203540457.5Figure 21. Safe Operating Area Figure 22. Current −Gain −Bandwidth ProductV CE , COLLECTOR EMITTER VOLTAGE (V)I C , COLLECTOR CURRENT (mA)I C , C O L L E C T O R C U R R E N T (A )f T , C U R R E N T −G A I N −B A N D W I D T H (M H z )PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APSOLDERING FOOTPRINT**For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L12.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q °°°°ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBT4401LT1G MMBT4401LT3G MMBT4401LT1。

NSV40201LT1G;中文规格书,Datasheet资料

Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector − Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) Base − Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 10 mA) Base − Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. td tr ts tf − − − − − − − − 100 100 750 110 ns ns ns ns hFE 200 200 180 180 − − − − − − 150 − − − 370 − − 0.006 0.044 0.085 0.082 0.760 0.760 − − − − − − − 0.011 0.060 0.115 0.115 0.900 0.900 − 450 45 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 6.0 − − − − − − − − − − 0.1 0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit

LP2301LT1G中文资料

▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device▼ Pb-Free package is available132SOT– 23 (TO–236AB)LP2301LT1GMaximum Ratings and Thermal Characteristics (T A = 25o C unless otherwise noted)Symbol Limit Unit V DS -20V GS ± 8I D -2.3I DM -8TA = 25o C 0.9 TA = 75oC0.57T J , T stg -55 to 150oCR qJC Junction-to-Ambient Thermal Resistance (PCB mounted)2)R qJA140Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation2. 1-in 22oz Cu PCB board3. Guaranteed by design; not subject to production testingContinuous Drain Current Gate-Source Voltage Maximum Power DissipationOperating Junction and Storage Temperature Range oC/WJunction-to-Case Thermal ResistanceParameterV A WDrain-Source Voltage P D Pulsed Drain Current 1) 20V P-Channel Enhancement-Mode MOSFETV DS = -20VR DS(ON), Vgs@-4.5V, Ids@-2.8A = 100R DS(ON), Vgs@-2.5V, Ids@-2.0A = 150FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOMm Ωm ΩLP2301LT1GELECTRICAL CHARACTERISTICS Parameter SymbolTest Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = -250uA -20--V Drain-Source On-State Resistance R DS(on)V GS = -4.5V, I D = -2.8A 69100Drain-Source On-State Resistance R DS(on)V GS = -2.5V, I D = -2.0A 83150m ΩGate Threshold Voltage V GS(th)V DS =V GS , I D = -250uA -0.45-0.95V Zero Gate Voltage Drain Current I DSS V DS = -9.6V, V GS = 0V -1uA Gate Body Leakage I GSS V GS = ±8V, V DS = 0V±100nA Gate ResistanceRg ΩForward Transconductance g fsV DS = -5V, I D = -4.0A6.5SDynamic3)Total Gate Charge Q g 15.23Gate-Source Charge Q gs 5.49Gate-Drain Charge Q gd 2.74Turn-On Delay Time t d(on)17.28Turn-On Rise Time t r 3.73Turn-Off Delay Time t d(off)36.05Turn-Off Fall Time t f 6.19Input Capacitance C iss 882.51Output CapacitanceC oss 145.54Reverse Transfer Capacitance C rss97.26Source-Drain Diode Max. Diode Forward Current I S -2.4A Diode Forward VoltageV SDI S = -0.75A, V GS = 0V-0.8-1.2VNote : Pulse test: pulse width <= 300us, duty cycle<= 2%ns V DS = -6V, V GS = 0Vf = 1.0 MHz pF V DS = -6V, I D = -2.8AV GS = -4.5VnCV DD = -6V, R L = 6ΩΙD = −1Α, V GEN = -4.5VR G = 6Ωm ΩNOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,19822. CONTROLLING DIMENSION: INCH.INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.11020.1197 2.803.04B 0.04720.0551 1.20 1.40C 0.03500.04400.89 1.11D 0.01500.02000.370.50G 0.07010.0807 1.78 2.04H 0.00050.00400.0130.100J0.00340.00700.0850.177K 0.01400.02850.350.69L 0.03500.04010.89 1.02S 0.08300.1039 2.10 2.64V0.01770.02360.450.60SOT -23VLP2301LT1GReel DimensionsMetric Dimensions Govern –– English are in parentheses for reference onlyEMBOSSED TAPE AND REEL DATAFOR DISCRETESAT MaxOutside Dimension Measured at EdgeGInside Dimension Measured Near Hub20.2mm Min (.795’’)1.5mm Min(.06’’)13.0mm ± 0.5mm(.512 ±.002’’)50mm Min (1.969’’)Full RadiusSize A Max GT Max 8 mm330mm (12.992’’)8.4mm+1.5mm, -0.0(.33’’+.059’’, -0.00)14.4mm (.56’’)LESHAN RADIO COMPANY, LTD.Storage ConditionsTemperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred )Recommended Period: One year after manufacturing(This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation)元器件交易网Shi p ment S p ecification10 Reel12 Inner Box/Carton 360KPCS/CartonDim(Unit:mm)Dim(Unit:mm)10Reel/Inner Box30KPCS/Inner Box460mm*400mm*420mm8000PCS/Reel (SOT-723,SOD-723)3000PCS/Reel80KPCS/Inner Box (SOT-723,SOD-723)960KPCS/Carton (SOT-723,SOD-723)LESHAN RADIO COMPANY, LTD.元器件交易网。

BAV74LT1G;BAV74LT1;BAV74LT3G;中文规格书,Datasheet资料

© Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 51Publication Order Number:BAV74LT1/DBAV74LT1GMonolithic DualSwitching DiodeFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS (EACH DIODE)Rating Symbol Value Unit Reverse Voltage V R50Vdc Forward Current I F200mAdc Peak Forward Surge Current I FM(surge)500mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1), T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/W Junction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in 99.5% alumina.SOT−23CASE 318STYLE 9MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONBAV74LT1G SOT−23(Pb−Free)3000/Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.312BAV74LT3G SOT−23(Pb−Free)10,000/T ape & Reel1JA M GGJA= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation and/or overbar may vary depending upon manufacturing location.2ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 5.0 m Adc)V (BR)50−Vdc Reverse Voltage Leakage Current, (Note 3)(V R = 50 Vdc, T J = 125°C)(V R = 50 Vdc)I R−−1000.1m AdcDiode Capacitance(V R = 0, f = 1.0 MHz)C D − 2.0pF Forward Voltage (I F = 100 mAdc)V F − 1.0Vdc Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, measured at I R = 1.0 mA, R L = 100 W )t rr−4.0ns3.For each individual diode while the second diode is unbiased.100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.0011.00V R , REVERSE VOLTAGE (VOLTS)0.90.80.70.6C D , D I O D E C A P A C I T A N C E (p F )2468I F , F O R W A R D C U R R E N T (m A )Figure 1. Forward Voltage Figure 2. Leakage CurrentFigure 3. CapacitanceI R , R E V E R S E C U R R E N T (μA )Curves Applicable to Each AnodePACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEADTHICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.SOLDERING FOOTPRINT*VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 9:PIN 1.ANODE2.ANODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAV74LT1G BAV74LT1BAV74LT3G。

MMBTA92LT1G;MMBTA92LT3G;SMMBTA92LT1G;SMMBTA92LT3G;MMBTA93LT1G;中文规格书,Datasheet资料

(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
Device
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 4. “ON” Voltages
1
VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10
VCE = 20 Vdc
30
F = 20 MHz
10
1000
1 3 5 7 9 11 13 15 17 19 21
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
0.1
© Semiconductor Components Industries, LLC, 2011
1
November, 2011 − Rev. 9
/
Publication Order Number: MMBTA92LT1/D
MMBTA92L, SMMBTA92L, MMBTA93L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic

MMBTA06LT3G;MMBTA06LT1G;MMBTA05LT1G;MMBTA05LT3G;MMBTA05LT1;中文规格书,Datasheet资料

MMBTA05L, MMBTA06L, SMMBTA06LDriver TransistorsNPN SiliconFeatures•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGSRating Symbol Value UnitCollector−Emitter VoltageMMBTA05LT1 MMBTA06LT1, SMMBTA06LT1V CEO6080VdcCollector−Base VoltageMMBTA05LT1 MMBTA06LT1, SMMBTA06LT1V CBO6080VdcEmitter−Base Voltage V EBO 4.0Vdc Collector Current − Continuous I C500mAdc Electrostatic Discharge ESD HBM Class 3BMM Class CCDM Class IV THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) T A = 25°C Derate above 25°C P D2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R qJA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, Tstg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23CASE 318STYLE 6MARKING DIAGRAMS1H M GGMMBTA05LT1COLLECTOR1EMITTER1GM M GGMMBTA06LT1,SMMBTA06L1H, 1GM= Specific Device CodeM= Date Code*G= Pb−Free PackageSee detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATION(Note: Microdot may be in either location)*Date Code orientation and/or overbar mayvary depending upon manufacturing location.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I B = 0)MMBTA05MMBTA06, SMMBTA06V (BR)CEO6080−−VdcEmitter −Base Breakdown Voltage (I E = 100 m Adc, I C = 0)V (BR)EBO 4.0−Vdc Collector Cutoff Current (V CE = 60 Vdc, I B = 0)I CES −0.1m Adc Collector Cutoff Current (V CB = 60 Vdc, I E = 0)MMBTA05(V CB = 80 Vdc, I E = 0)MMBTA06, SMMBTA06I CBO−−0.10.1m AdcON CHARACTERISTICSDC Current Gain(I C = 10 mAdc, V CE = 1.0 Vdc)(I C = 100 mAdc, V CE = 1.0 Vdc)h FE100100−−−Collector −Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)V CE(sat)−0.25Vdc Base −Emitter On Voltage(I C = 100 mAdc, V CE = 1.0 Vdc)V BE(on)−1.2VdcSMALL −SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4)(I C = 10 mA, V CE = 2.0 V, f = 100 MHz)f T100−MHz3.Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.4.f T is defined as the frequency at which |h fe | extrapolates to unity.Figure 1. Switching Time Test CircuitsOUTPUTTURN-ON TIME V S t 6.0 pFtr = 3.0 ns+10 V5.0 m OUTPUTTURN-OFF TIME +V V S t 6.0 pFt r = 3.0 ns5.0 m *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage PolaritiesFigure 2. Current Gain Bandwidth Product vs.Collector CurrentFigure 3. CapacitanceFigure 4. Switching TimeI C , COLLECTOR CURRENT (mA)V R , REVERSE VOLTAGE (V)I C , COLLECTOR CURRENT (mA)200100502010t , T I M E (n s )2005001.0 k 5003070300700C , C A P A C I T A N C E (p F )300Figure 5. DC Current Gain vs. CollectorCurrentI C , COLLECTOR CURRENT (mA)f t a u , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )h f e , D C C U R R E N T G A I NFigure 6. Collector Emitter Saturation Voltagevs. Collector Current Figure 7. Base Emitter Saturation Voltage vs.Collector CurrentIC , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)0.010.11V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )V B E (s a t ), B A S E −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 8. Base Emitter Turn −ON Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)1.1V B E (o n ), B A S E −E M I T T E R V O L T A G E (V )Figure 9. Saturation RegionI B , BASE CURRENT (mA)Figure 10. Base −Emitter TemperatureCoefficientI C , COLLECTOR CURRENT (mA)−0.8−1.2−1.6−2.0−2.4−2.8Figure 11. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)10000IC , C O L L E C T O R C U R R E N T (m A )10.90.80.70.60.50.40.30.20.1V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )R q V B , T E M P E R A T U R E C O E F F I C I E N T (m V /°C )Figure 12. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (m A )1000100101ORDERING INFORMATIONDevice Package Shipping†3000 / Tape & Reel MMBTA05LT1G SOT−23(Pb−Free)MMBTA05LT3G SOT−2310,000 / Tape & Reel(Pb−Free)3000 / Tape & Reel MMBTA06LT1G SOT−23(Pb−Free)SMMBTA06LT1G SOT−233000 / Tape & Reel(Pb−Free)10,000 / Tape & Reel MMBTA06LT3G SOT−23(Pb−Free)SMMBTA06LT3G SOT−2310,000 / Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q°°°°STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBTA06LT3G MMBTA06LT1G MMBTA05LT1G MMBTA05LT3G MMBTA05LT1MMBTA06LT1 MMBTA05LT3。

MMBF4393LT1G中文资料

MMBF4391LT1,MMBF4392LT1,MMBF4393LT1JFET Switching Transistors N−ChannelFeatures•Pb−Free Packages are AvailableMAXIMUM RATINGSTHERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.1.FR−5 = 1.0 0.75 0.062 in.SOT−23CASE 318STYLE 10MARKINGDIAGRAMxx M1232 SOURCE3GATE1 DRAINxx= Specific Device CodeM= Date CodeSee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSee specific marking information in the device marking section on page 2 of this data sheet.DEVICE MARKING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS ORDERING INFORMATIONSpecifications Brochure, BRD8011/D.TYPICAL CHARACTERISTICS, T U R N −O N D E L A Y T I M E (n s )d (o n )t I D , DRAIN CURRENT (mA), T U R N −O F F D E L A Y T I M E (n s )d (o f f )t Figure 3. Turn−Off Delay TimeI D , DRAIN CURRENT (mA)Figure 4. Fall Time5.02.020101.0501002005001000Figure 5. Switching Time Test CircuitFigure 6. Typical Forward Transfer AdmittanceFigure 7. Typical CapacitanceI D , DRAIN CURRENT (mA)2.05.03.07.01020, F O R W A R D T R A N S F E R A D M I T T A N C E (m m h o s )f s V 102.0153.05.07.0V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )OUTPUTr t f ≤ 0.5 nsPULSE WIDTH = 2.0 m s DUTY CYCLE ≤ 2.0%R D’ = R D (R T + 50)R D + R T + 50Figure 8. Effect of Gate−Source Voltageon Drain−Source Resistance V GS , GATE−SOURCE VOLTAGE (VOLTS)r Figure 9. Effect of Temperature on Drain−SourceOn−State Resistance, D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (N O R M A L I Z E D )T channel , CHANNEL TEMPERATURE (°C)1.51.0r , D R A I N −S O U R C E O N −S T A T E D S (o n )R E S I S T A N C E (O H M S )NOTE 1The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply V oltage (−V GG ). The Drain−Source V oltage (V DS ) is slightly lower than Drain Supply V oltage (V DD ) due to the voltage divider. Thus Reverse Transfer Capacitance (C rss ) of Gate−Drain Capacitance (C gd ) is charged to V GG + V DS .During the turn−on interval, Gate−Source Capacitance (C gs )discharges through the series combination of R Gen and R K . C gd must discharge to V DS(on) through R G and R K in series with the parallel combination of effective load impedance (R’D ) and Drain−Source Resistance (r DS ). During the turn−off, this charge flow is reversed.Predicting turn−on time is somewhat difficult as the channel resistance r DS is a function of the gate−source voltage. While C gs discharges, V GS approaches zero and r DS decreases. Since C gd discharges through r DS , turn−on time is non−linear. During turn−off, the situation is reversed with r DS increasing as C gd charges. The above switching curves show two impedance conditions;1) R K is equal to R D’ which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) R K = 0 (low impedance) the driving source impedance is that of the generator.Figure 10. Effect of I DSS on Drain−Source Resistance and Gate−Source VoltageI DSS , ZERO−GATE VOLTAGE DRAIN CURRENT (mA), D R A I N −S O U R C E O N −S T A T E D S (o n )r 2010304050304050607020R E S I S T A N C E (O H M S )1001.02.03.04.05.0, G A T E −S O U R C E V O L T A G E G S V (V O L T S )6.07.08.09.010706080901008090100110120130140150NOTE 2The Zero−Gate−V oltage Drain Current (I DSS ) is the principle determinant of other J−FET characteristics.Figure 10 shows the relationship of Gate−Source Off V oltage (V GS(off)) and Drain−Source On Resistance (r DS(on)) to I DSS . Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknownr DS(on) and V GS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an I DSS range of 25 to 75 mA. Figure 10 shows r DS(on) = 52 Ohms for I DSS = 25 mA and 30Ohms for I DSS = 75 mA. The corresponding V GS values are 2.2 V and 4.8 V .PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE AJ*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1STYLE 10:PIN 1.DRAIN2.CSOURCE3.GATEON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

MMBFJ310LT1G中文资料

Publication Order Number: MMBFJ309LT1/D
元器件交易网
MMBFJ309LT1, MMBFJ310LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
IGSS
−
−
− 1.0
nAdc
−
−
− 1.0
mAdc
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
MMBFJ309
VGS(off)
− 1.0
−
− 4.0
Vdc
MMBFJ310
− 2.0
−
− 6.5
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0)
versus Drain Current
Yos,
OUTPUT ADMITTANCE CAPACITANCE (pF)
(μ
mhos)
10
120
RDS 96
7.0
72
Cgs
4.0
48
Cgd
24
1.0
0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3

BFR31中文资料

QUICK REFERENCE DATA SYMBOL VDS VGSO Ptot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb ≤ 40 °C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS − − − MIN. MAX. ±25 −25 250 UNIT V V mW
MDA660
VGS = 0 V max 3 3 −0.2 −0.4 −0.6 1 −0.8 −1 −1.2 0 0 2 4 6 8 10 VDS (V)
2 typ 1
2
0 −5
min −4 −3 −2 −1 0 VGS (V)
BFR31. VDS = 10 V; Tj = 25 °C.
BFR31. Tj = 25 °C.
−0.4 −0.6 −0.8 −1 −1.2 50 75 100 Tj (°C) 125
BFR30. VDS = 10 V.
BFR31. VDS = 10 V.
Fig.7
Drain current as a function of junction temperature; typical values.
BFR30; BFR31
handbook, halfpage
6
MDA661

BAV99LT3G;BAV99LT1G;BAV99LT1;中文规格书,Datasheet资料

TA = 25C
0
10
20
30
40
50
60
70
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
0.61 Cd, DIODE CAPACITANCE (pF) 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 0 1 2 3 4 5 6
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 65 to +150 Unit mW mW/C C/W mW mW/C C/W C
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AP
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

MMUN2111LT1G;MMUN2114LT1G;MMUN2115LT1G;MMUN2113LT1G;MMUN2134LT1G;中文规格书,Datasheet资料

SOT−23 CASE 318 STYLE 6
PIN 1
R1
BASE
(INPUT) R2
PIN 3 COLLECTOR (OUTPUT)
PIN 2 EMITTER (GROUND)
ห้องสมุดไป่ตู้
MARKING DIAGRAM
A6x M G G
1
A6x = Device Code
x
= A − L (Refer to page 2)
3,000/Tape & Reel
/
2
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
• Available in 8 mm embossed tape and reel. • AEC−Q101 Qualified and PPAP Capable • S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
MMUN2111LT1G, SMMUN2111LT1G, NSVMMUN2111LT1G Series

BFR30中文资料

BFR30; BFR31
MAX. ±25 −25 −25 10 5 250 +150 150 V V V
UNIT
mA mA mW °C °C
VALUE 430
UNIT K/W
handbook, halfpage
300
MDA245
Ptot (mW) 200
100
0 0 40 80 120 200 160 Tamb (°C)
1 Top view 2
handbook, halfpage
BFR30; BFR31
3 d s
g
MAM385
Marking codes: BFR30: M1p. BFR31: M2p.
Fig.1 Simplified outline and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
BFR30; BFR31
MIN.
MAX. −0.2 10 5 −3 −1.3 −4 −2 −5 −2.5 4 4.5 − − 40 25 20 15 4 4 1.5 1.5 0.5
UNIT nA mA mA V V V V V V mS mS mS mS µS µS µS µS pF pF pF pF µV
QUICK REFERENCE DATA SYMBOL VDS VGSO Ptot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb ≤ 40 °C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS − − − MIN. MAX. ±25 −25 250 UNIT V V mW

FC Series 30单相电源滤波器用于频率转换器说明书

FC SeriesFC SeriesSingle Phase Power Line Filter for Frequency ConvertersMaximum leakage current each Line to Ground:B suﬃx no suﬃx@ 120 VAC 60 Hz: 3.9 mA 3.8 mA @250 VAC 50 Hz:7.0 mA 6.7 mA Hipot rating (one minute):Line to Ground:2250 VDC Line to Line:1450 VDC Rated Voltage (max):250 VAC Operating Frequency:50/60 Hz Rated Current:6to 50AOperating Ambient Temperature Range (at rated current I r ):-10°C to +40°CIn an ambient temperature (T a ) higher than +40°C the maximum operating current (I o ) is calculated asfollows: I o = I r √(85-T a)/45• Designed for frequency inverters and variable speed motor drives• Suitable for electronically noisy environments • Protects programmable logic controllers from RF noise on the AC power line • Side ﬂanges for easy mounting• T ouch safe terminals provide easy connections and prevent inadvertent contact for safety in the most demanding applicationsOrdering Information36 FC 10 BSuﬃxB – Single stage Omit for dual stageInput / Output Style10 – DIN type terminal block FC SeriesCurrent Rating6, 12, 16, 25, 36 or 50ASpeciﬁcationsElectrical SchematicsUL RecognizedAvailable Part NumbersFC10FC10BNote 1:25, 36, 50A only Note 2:50A onlyFC SeriesSingle Phase Filter for Frequency Converters (continued)RFI Power Line Filters1Case StylesFC10 / FC10B(6, 12, 16A)may be on either ﬂange.Typical Dimensions:Line/Load Terminals (4): DIN type accepts 10AWG solid / 12AWG stranded Ground Terminals (2): 8-32 screw terminals Mounting Holes (4):.203 x .156 [5.16 x 3.96]FC10 / FC10B(25, 36, 50A )Typical Dimensions:Line/Load Terminals (4): DIN type accepts 8AWG solid / 10AWG stranded Ground Terminals (2): 8-32 screw terminals Mounting Slots (4):.260 [6.6] wide6FC104.60 3.10 1.78 2.677 3.70 2.0116.878.745.2167.894.050.812FC10/10B 16FC10/10B 5.47 3.96 2.18 3.50 4.532.0139.0100.655.488.9114.8 5.0825, 36, 50FC10/10B 6.90 5.48 2.55 4.90 5.94 2.756175.3139.264.77124.5150.970.0Case Dimensions32FC SeriesSingle Phase Filter for Frequency Converters (continued)Dimensions are in inches and millimeters unless otherwise speciﬁed. Values in italicsare metric equivalents. Dimensions are shown for reference purposes only.For email, phone or live chat, please go to/help Performance DataTypical Insertion LossMinimum Insertion LossFrequency – MHzPart No..01.03.05.1.51510306FC109192637656550403512FC105172537656565603516FC104152236656570703525FC102142236757570704836, 50FC10-61427687570705012, 16FC10B16283750817663553825FC10B14253649918871644636FC10B11253750818773664950FC10B112436498175625437Common Mode / Asymmetrical (Line to Ground)Diﬀerential Mode / Symmetrical (Line to Line)Common Mode / Asymmetrical (L-G)Diﬀerential Mode / Symmetrical (L-L) Measured in closed 50 Ohm systemFrequency – MHzPart No..01.03.05.1.51510306FC1010103560757560504512FC1014143051757575704516FC1014142955757575704525FC1014141742757570705036, 50FC1014141742757570705012, 16FC10B30324664918677786525FC10B24243146928786755536FC10B27332741898882745550FC10B303248649187827967。

BFR31LT1中文资料

0.037 0.95
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT–23 SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA
I D , DRAIN CURRENT (mA)
8
VGS(off)
^ – 5.8 V
VGS = 0 V 8
VGS(off)
^ – 5.8 V
6 VDS = 15 V 4
2
0 –7
–6
–5 –4 –3 –2 –1 VGS, GATE – SOURCE VOLTAGE (VOLTS)

FBR5030资料

Reverse Voltage (V) Typical Forward Characteristics Peak Forward Surge Current (A)
Reverse Current (mA)
FBR5050...4050
Reverse Voltage (V) Peak Forward Surge Current
Page 7-42
元器件交易网
Data Sheet
50 Amp SCHOTTKY BARRIER RECTIFIERS
Typical Reverse Characteristics Reverse Current (mA)
Forward Current Derating Curve Average Forward Current (A)
Number of Cycles @ 60 Hz
For Capacitive Load, Derate Current by 20%.
Page 7-43
FBR5030 . . . 5060 Series
FBR5030...5045
Case Temperature (oC) Typical Junction pacitance Junction Capacitance (pF)
1000
Reverse Voltage (V) Typical Reverse Characteristics
FBR5030...5045 100 FBR5050...4050
Forward Current (A)
Ratings at 25 Deg. C ambient temperature unless otherwise specified. Single Phase Half Wave, 60 Hz Resistive or Inductive Load.