METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ALON

专利名称：METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ALONG A SELECTED
INTERFACE
发明人：LANDRU, DIDIER,FIGUET, CHRISTOPHE
申请号：EP13782822.4
申请日：20130904
公开号：EP2893554A2
公开日：
20150715
专利内容由知识产权出版社提供
摘要：A kind of method of the present invention is for separating at least two substrate (S1, S2), it includes at least two separation interface (I1 that the latter, which forms structure (sulphur), the I2 extended in parallel) interarea structure, it is selected from the interface along interface (I1), at least one described two substrate is intended for electronics, optics, photoelectronics and/or photovoltaic. The separation applies active force at substrate (S1, S2), and by the blade by insertion blade (B groups), separates two substrates. The method is characterized in that, it is the following steps are included: for separating, selection interface (I1) is to be easy stress corrosion cracking (that is, the power and a fluid that separate under collective effect and disconnecting existing for the interface siloxanes key (Si-O-Si) (I1); Before insertion, the damage of blade at least partly external zones (R1) selectes (I1) of interface, contain the region, wherein blade (B groups) is inserted into, make external zones described in impact strength (R1) lower than other interfaces in blade insert region, to allow separating base plate (S1, S2) will start along selected (I1) at affected area (R1); And by the substrate (S1, S2) being spatially separating between fluid, while blade is continued into, such as reduce impact
strength and pass through stress corrosion cracking at selected (I1).
申请人：SOITEC
地址：Chemin des Franques Parc Technologique des Fontaines 38190 Bernin FR 国籍：FR
代理机构：Grünecker Patent- und Rechtsanwälte PartG mbB
更多信息请下载全文后查看。