TPS650250RHBT;TPS650250RHBR;TPS650250EVM-447;中文规格书,Datasheet资料

FEATURESAPPLICATIONSDESCRIPTIONTPS650250/2.8V V /1.8V m FF F TPS650250 SLVS843–DECEMBER 2008Power Management IC for Li-Ion Powered SystemsThe TPS650250also integrates two general purpose 200mA LDO voltage regulators,which are enabled •1.6A,97%Efficient Step-Down Converter for with an external input pin.Each LDO operates with System Voltage (VDCDC1)an input voltage range between 1.5V and 6.5V – 3.3V or2.8V or Adjustableallowing them to be supplied from one of the step-down converters or directly from the battery.The •0.8A,up to 95%Efficient Step-Down Converter output voltage of the LDOs can be set with an for Memory Voltage (VDCDC2)external resistor divider for maximum flexibility.– 1.8V or 2.5V or AdjustableAdditionally there is a 30mA LDO typically used to •0.8A,90%Efficient Step-Down Converter for provide power in a processor based system to a Processor Core (VDCDC3)voltage rail that is always on.TPS650250comes in a small 5mm x 5mm 32pin QFN package (RHB).•adjustable output voltage on VDCDC3•30mA LDO for Vdd_aliveFunctional Block Diagram•2×200mA General Purpose LDOs (LDO1and LDO2)•Dynamic Voltage Management for Processor Core•LDO1and LDO2Voltage Externally Adjustable •Separate Enable Pins for Inductive Converters • 2.25MHz Switching Frequency •85µA Quiescent Current•Thermal Shutdown Protection•Cellular/Smart Phone •GPS•Digital Still Camera•Split Supply DSP and µP Solutions •Samsung ARM-Based Processors,etc.The TPS650250is an integrated Power Management IC for applications powered by one Li-Ion or Li-Polymer cell,which require multiple power rails.The TPS650250provides three highly efficient,step-down converters targeted at providing the core voltage,peripheral,I/O and memory rails in a processor based system.All three step-down converters enter a low power mode at light load for maximum efficiency across the widest possible range of load currents.The converters can be forced into fixed frequency PWM mode by pulling the MODE pin high.Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication date.Copyright ©2008,Texas Instruments IncorporatedProducts conform to specifications per the terms of the Texas Instruments standard warranty.Production processing does not necessarily include testing of all parameters.ht t p ://oABSOLUTE MAXIMUM RATINGSDISSIPATION RATINGSTPS650250SLVS843–DECEMBER These devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.ORDERING INFORMATION (1)VOLTAGE ATOUTPUT CURRENT ON VOLTAGE AT T APACKAGE PART NUMBER (2)DCDC3DCDC1/DCDC2/DCDC3VDD_ALIVE32Pin QFN –40°C to 85°C Adjustable1.6A /0.8A /0.8A1VTPS650250RHB(RHB)(1)For the most current package and ordering information,see the Package Option Addendum at the end of this document,or see the TI website at .(2)The RHB package is available in tape and reel.Add R suffix (TPS650250RHBR)to order quantities of 3000parts per reel.Add T suffix (TPS650250RHBT)to order quantities of 250parts per reel.over operating free-air temperature range (unless otherwise noted)(1)VALUEUNIT Input voltage range on all pins except A/PGND pins with respect to AGND –0.3to 7V Voltage range on pins VLDO1,VLDO2,FB_LDO1,FB_LDO2–0.3to 3.6V Current at VINDCDC1,L1,PGND1,VINDCDC2,L2,PGND2,VINDCDC3,L3,PGND32000mA Peak current at all other pins 500mA Continuous total power dissipation See Dissipation Rating TableT A Operating free-air temperature –40to 85°C T J Maximum junction temperature 125°C T st Storage temperature–65to 150°C(1)Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.T A ≤25°C DERATING FACTOR T A =70°C T A =85°C PACKAGE (1)R θJA POWER RATINGABOVE T A =25°CPOWER RATINGPOWER RATINGRHB35K/W2.85W28mW/K1.57W1.14W(1)The thermal resistance junction to ambient of the RHB package is measured on a high K board.The thermal resistance junction to power pad is 1.5k/W.2Submit Documentation FeedbackCopyright ©2008,Texas Instruments IncorporatedProduct Folder Link(s):TPS650250ht t p ://oRECOMMENDED OPERATING CONDITIONS TPS650250 SLVS843–DECEMBER2008MIN NOM MAX UNIT V CC Input voltage range step-down converters,VINDCDC1,VINDCDC2,VINDCDC3 2.5 6.0V Output voltage range for step-down converter,VDCDC1(1)0.6VINDCDC1V V O Output voltage range for mem step-down converter,VDCDC2(1)0.6VINDCDC2V Output voltage range for core step-down converter,VDCDC30.6VINDCDC3V V I Input voltage range for LDOs,VINLDO1,VINLDO2 1.5 6.5V V O Output voltage range for LDOs1 3.3VI O Output current at L,V1DCDC11600mAL1Inductor at L1(2) 1.5 2.2µHC I Input capacitor at VINDCDC1(2)10µFC O Output capacitor at VDCDC1(2)1022µFI O Output current at L2,VDCDC2800mAL2Inductor at L2(2) 1.5 2.2µHC I Input capacitor at VINDCDC2(2)10µFC O Output capacitor at VDCDC2(2)1022µFI O Output current at L3,VDCDC3800mAL3Inductor at L3(2) 1.5 2.2µHC I Input capacitor at VINDCDC3(2)10µFC O Output capacitor at VDCDC3(2)1022µFC I Input capacitor at VCC(2)1µFC I Input capacitor at VINLDO(2)1µFC O Output capacitor at VLDO1,VLDO2(2) 2.2µFI O Output current at VLDO1,VLDO2200mAC O Output capacitor at Vdd_alive(2) 2.2µFI O Output current at Vdd_alive30mAT A Operating ambient temperature–4085°C T J Operating junction temperature–40125°C R CC Resistor from VINDCDC3,VINDCDC2,VINDCDC1to V CC used for filtering(3)110Ω(1)When using an external resistor divider at DEFDCDC2,DEFDCDC1.(2)See applications section for more information,for V O>2.85V choose3.3µH inductor.(3)Up to2.5mA can flow into V CC when all3converters are running in PWM,this resistor will cause the UVLO threshold to be shiftedaccordingly.Copyright©2008,Texas Instruments Incorporated Submit Documentation Feedback3Product Folder Link(s):TPS650250h t t p://oELECTRICAL CHARACTERISTICSTPS650250SLVS843–DECEMBER VINDCDC1=VINDCDC2=VINDCDC3=VCC =VINLDO =3.6V,T A =–40°C to 85°C,typical values are at T A =25°C (unless otherwise noted)CONTROL SIGNALS:EN_DCDC1,EN_DCDC2,EN_DCDC3,EN_LDO,MODE,EN_VDD_ALIVEPARAMETERTEST CONDITIONSMIN TYPMAX UNIT High level input V IH 1.45VCC V voltage Low level input V IL 00.4V voltageI HInput bias current0.010.1µASUPPLY PINS:VCC,VINDCDC1,VINDCDC2,VINDCDC3PFM All 3DCDC converters enabled,zero load 135170and no switching,LDOs enabledPFM All 3DCDC converters enabled,zero load and no switching,LDO1,LDO2=OFF,Vdd_alive 75100=ONOperating quiescent I (qPFM)V CC =3.6VµAcurrentPFM DCDC1and DCDC2converters enabled,zero load and no switching,LDO1,LDO2=OFF,5580Vdd_alive =ONPFM DCDC1converter enabled,zero load and no 4060switching,LDO1,LDO2=OFF,Vdd_alive =ON All 3DCDC converters enabled &running in PWM,2LDOs offCurrent into V CC ;PWM DCDC1and DCDC2converters enabled and1.52.5I VCC(PWM)V CC =3.6VmAPWMrunning in PWM,LDOs offPWM DCDC1converter enabled and running in 0.852PWM,LDOs offAll converters disabled,LDO1,LDO2=OFF,16Vdd_alive =OFFI qQuiescent currentV CC =3.6VµAAll converters disabled,LDO1,LDO2=OFF,26Vdd_alive =ON4Submit Documentation FeedbackCopyright ©2008,Texas Instruments IncorporatedProduct Folder Link(s):TPS650250ht t p ://oELECTRICAL CHARACTERISTICS TPS650250 SLVS843–DECEMBER2008 VINDCDC1=VINDCDC2=VINDCDC3=VCC=VINLDO=3.6V,T A=–40°C to85°C,typical values are at T A=25°C(unless otherwise noted)PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDCDC1STEP-DOWN CONVERTERV I Input voltage range,VINDCDC1 2.56VI O Maximum output current V O=3.3V1600mAI SD Shutdown supply current in VINDCDC1EN_DCDC1=GND0.11µAR DS(on)P-channel MOSFET on-resistance VINDCDC1=VGS=3.6V125261mΩI LP P-channel leakage current VINDCDC1=6V2µAR DS(on)N-channel MOSFET on-resistance VINDCDC1=VGS=3.6V130260mΩI LN N-channel leakage current V DS=6V710µAI LIMF Forward current limit(P-and N-channel) 2.5V<V INMAIN<6V 1.75 1.97 2.15Af S Oscillator frequency 1.95 2.25 2.55MHzFixed output voltage 2.8V–2%2%VINDCDC1=3.3V to6V;MODE=0(PWM/PFM)0mA≤IO ≤1.0A3.3V–2%2% Fixed output voltage 2.8V–1%1%VINDCDC1=3.7V to6V;MODE=1(PWM)0mA≤IO ≤1.0A3.3V–1%1%VDCDC1Adjustable output voltage with resistorVINDCDC1=VDCDC1+0.4V(min2.5V)divider at DEFDCDC1MODE=0–2%2%to6V;0mA≤I O≤1.6A(PWM/PFM)Adjustable output voltage with resistorVINDCDC1=VDCDC1+0.4V(min2.5V)divider at DEFDCDC1;MODE=1–1%1%to6V;0mA≤I O≤1.6A(PWM)VINDCDC1=VDCDC1+0.3V(min.2.5V)Line regulation0%/Vto6V;I O=10mALoad regulation I O=10mA to1.6A0.25%/AVDCDC1ramping from5%to95%oft SS Soft start ramp time750µstarget valueR(L1)Internal resistance from L1to GND1MΩCopyright©2008,Texas Instruments Incorporated Submit Documentation Feedback5Product Folder Link(s):TPS650250h t t p://oELECTRICAL CHARACTERISTICSTPS650250SLVS843–DECEMBER VINDCDC1=VINDCDC2=VINDCDC3=VCC =VINLDO =3.6V,T A =–40°C to 85°C,typical values are at T A =25°C (unless otherwise noted)PARAMETERTEST CONDITIONSMINTYPMAXUNITVDCDC2STEP-DOWN CONVERTER V I Input voltage range,VINDCDC2 2.56V I O Maximum output currentV O =2.5V800mA I SD Shutdown supply current in VINDCDC2EN_DCDC2=GND 0.11µA R DS(on)P-channel MOSFET on-resistance VINDCDC2=V GS =3.6V 140300m ΩI LP P-channel leakage current VINDCDC2=6.0V 2µA R DS(on)N-channel MOSFET on-resistance VINDCDC2=VGS =3.6V 150297m ΩI LN N-channel leakage current V DS =6V710µA I LIMF Forward current limit (P-and N-channel) 2.5V <VINDCDC2<6V1.05 1.16 1.29A f SOscillator frequency 1.95 2.252.55MHz1.8V VINDCDC2=2.5V to 6V;0mA ≤I O ≤1.6A –2%2%Fixed output voltage MODE =0(PWM/PFM) 2.5V VINDCDC2=3V to 6V;0mA ≤I O ≤1.6A –2%2%1.8V VINDCDC2=2.5V to 6V;0mA ≤I O ≤1.6A –2%2%Fixed output voltage MODE =1(PWM)2.5VVINDCDC2=3V to 6V;0mA ≤I O ≤1.6A –1%1%VDCDC2Adjustable output voltage with resistor VINDCDC2=VDCDC2+0.5V (min 2.5V)divider at DEFDCDC2MODE =0–2%2%to 6V;0mA ≤I O ≤1.6A(PWM)Adjustable output voltage with resistor VINDCDC2=VDCDC2+0.5V (min 2.5V)divider at DEFDCDC2;MODE =1–1%1%to 6V;0mA ≤I O ≤1.6A(PWM)VINDCDC2=VDCDC2+0.3V (min.2.5Line regulation 0.0%/V V)to 6V;I O =10mA Load regulationI O =10mA to 1.6A0.25%/A VDCDC2ramping from 5%to 95%of t SS Soft start ramp time750µs target value R(L2)Internal resistance from L2to GND1M Ω6Submit Documentation FeedbackCopyright ©2008,Texas Instruments IncorporatedProduct Folder Link(s):TPS650250ht t p ://oELECTRICAL CHARACTERISTICS TPS650250 SLVS843–DECEMBER2008 VINDCDC1=VINDCDC2=VINDCDC3=VCC=VINLDO=3.6V,T A=–40°C to85°C,typical values are at T A=25°C(unless otherwise noted)PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VDCDC3STEP-DOWN CONVERTERV I Input voltage range,VINDCDC3 2.5 6.0VI O Maximum output current V O=1.6V800mAShutdown supply current inI SD EN_DCDC3=GND0.11µAVINDCDC3R DS(on)P-channel MOSFET on-resistance V INDCDC3=V GS=3.6V310698mΩI LP P-channel leakage current VINDCDC3=6V0.12µAR DS(on)N-channel MOSFET on-resistance V INDCDC3=V GS=3.6V220503mΩI LN N-channel leakage current V DS=6.0V710µAForward current limit(P-andI LIMF 2.5V<V INDCDC3<6V 1.00 1.20 1.40AN-channel)f S Oscillator frequency 1.95 2.25 2.55MHzAdjustable output voltage with VINDCDC3=VDCDC3+0.5V(min2.5V)to6V;resistor divider at DEFDCDC20mA≤I O≤0.8A–2%2%MODE=0(PWM)VDCDC3Adjustable output voltage with VINDCDC3=VDCDC3+0.5V(min2.5V)to6V;resistor divider at DEFDCDC2;0mA≤I O≤0.8A–1%1%MODE=1(PWM)VINDCDC3=VDCDC3+0.3V(min.2.5V)toLine regulation0.0%/V6V;I O=10mALoad regulation I O=10mA to600mA0.25%/AVDCDC3ramping from5%to95%of targett SS Soft start ramp time750µsvalueR(L3)Internal resistance from L3to GND1MΩCopyright©2008,Texas Instruments Incorporated Submit Documentation Feedback7Product Folder Link(s):TPS650250h t t p://oELECTRICAL CHARACTERISTICSTPS650250SLVS843–DECEMBER VINDCDC1=VINDCDC2=VINDCDC3=VCC =VINLDO =3.6V,T A =–40°C to 85°C,typical values are at T A =25°C (unless otherwise noted)PARAMETERTEST CONDITIONSMIN TYP MAX UNIT VLDO1and VLDO2Low Dropout Regulators I (q)Operating quiescent current Current per LDO into VINLDO 1630µA I (SD)Shutdown currentTotal current into VINLDO,VLDO =0V0.62µA V I Input voltage range for LDO1,LDO2 1.5 6.5V V O LDO1output voltage range 1 3.3V LDO2output voltage range 13.3V VFB LDO1and LDO2feedback voltage See(1)1.0V I O Maximum output current for LDO1,LDO2V I =1.8V,V O =1.3V 200mA I O Maximum output current for LDO1,LDO2V I =1.5V;V O =1.3V 120mAI SCLDO1and LDO2short circuit current limit V LDO1=GND,V LDO2=GND 400mA Minimum voltage drop at LDO1,LDO2I O =50mA,VINLDO =1.8V 120mV Minimum voltage drop at LDO1,LDO2I O =50mA,VINLDO =1.5V 65150mV Minimum voltage drop at LDO1,LDO2I O =200mA,VINLDO =1.8V 300mVOutput voltage accuracy for LDO1,LDO2I O =10mA–2%1%Line regulation for LDO1,LDO2V INLDO1,2=V LDO1,2+0.5V (min.2.5V)to 6.5V,–1%1%I O =10mALoad regulation for LDO1,LDO2I O =0mA to 200mA–1%1%Regulation time for LDO1,LDO2Load change from 10%to 90%10µsVdd_alive Low Dropout Regulator Vdd_alive Vdd_alive LDO output voltage,TPS6502500to I O =0mA1.0V TPS6502504I O Output current for Vdd_alive 30mA I (SC)Vdd_alive short circuit current limit Vdd_alive =GND 100mAOutput voltage accuracy for Vdd_alive I O =0mA–1%1%Line regulation for Vdd_alive V CC =Vdd_alive +0.5V to 6.5V,I O =0mA –1%1%Regulation time for Vdd_aliveLoad change from 10%to 90%10µs AnaLogic Signals DEFDCDC1,DEFDCDC2,DEFDCDC3V IH High level input voltage 1.3VCC V V IL Low level input voltage 00.1V I H Input bias current 0.0010.05µA THERMAL SHUTDOWNT SDThermal shutdownIncreasing junction temperature 160°C Thermal shudown hysteresisDecreasing junction temperature20°CINTERNAL UNDER VOLTAGE LOCK OUT UVLO Internal UVLOVCC falling–3%2.353%V V UVLO_HYST internal UVLO comparator hysteresis 120mV VOLTAGE DETECTOR COMPARATORPWRFAIL_SNSComparator threshold Falling threshold–2% 1.02%V Hysteresis 405060mV Propagation delay25mV overdrive 10µs V OLPower fail output low voltageI OL =5mA 0.3V(1)If the feedback voltage is forced higher than above 1.2V,a leakage current into the feedback pin may occur.8Submit Documentation FeedbackCopyright ©2008,Texas Instruments IncorporatedProduct Folder Link(s):TPS650250ht t p ://oDEVICE INFORMATION PIN ASSIGNMENTSVDCDC3PGND3L3 VINDCDC3 VINDCDC1L1PGND1 VDCDC1EN_Vdd_aliveMODEDEFDCDC2PWRFAILEN_DCDC1EN_DCDC2EN_DCDC3EN_LDODEFDCDC3AGND1PWRFAIL_SNSVccVINDCDC2L2PGND2VDCDC2DEFDCDC1FB_LDO2FB_LDO1Vdd_aliveAGND2VLDO2VINLDOVLDO1TPS650250 SLVS843–DECEMBER2008TERMINAL FUNCTIONSTERMINALI/O DESCRIPTIONNAME NO.SWITCHING REGULATOR SECTIONAGND131Analog ground connection.All analog ground pins are connected internally on the chip.AGND213Analog ground connection.All analog ground pins are connected internally on the chip.PowerPad–Connect the power pad to analog ground.I Input voltage for VDCDC1step-down converter.This must be connected to the same voltage supply asVINDCDC15VINDCDC2,VINDCDC3and VCC.L16Switch pin of VDCDC1converter.The VDCDC1inductor is connected here.VDCDC18I VDCDC1feedback voltage sense input,connect directly to VDCDC1PGND17Power ground for VDCDC1converterI Input voltage for VDCDC2step-down converter.This must be connected to the same voltage supply asVINDCDC228VINDCDC1,VINDCDC3and VCC.L227Switch pin of VDCDC2converter.The VDCDC2inductor is connected here.VDCDC225I VDCDC2feedback voltage sense input,connect directly to VDCDC2PGND226Power ground for VDCDC2converterI Input voltage for VDCDC3step-down converter.This must be connected to the same voltage supply asVINDCDC34VINDCDC1,VINDCDC2and VCC.L33Switch pin of VDCDC3converter.The VDCDC3inductor is connected here.VDCDC31I VDCDC3feedback voltage sense input,connect directly to VDCDC3PGND32Power ground for VDCDC3converterPower supply for digital and analog circuitry of DCDC1,DCDC2and DCDC3DC-DC converters.This must be Vcc29Iconnected to the same voltage supply as VINDCDC3,VINDCDC1and VINDCDC2.Input signal indicating default VDCDC1voltage,0=2.8V,1=3.3VDEFDCDC19I This pin can also be connected to a resistor divider between VDCDC1and GND.In this case the outputvoltage of the DCDC1converter can be set in a range from0.6V to VINDCDC1Input signal indicating default VDCDC2voltage,0=1.8V,1=2.5VDEFDCDC222I This pin can also be connected to a resistor divider between VDCDC2and GND.In this case the outputvoltage of the DCDC2converter can be set in a range from0.6V to VINDCDC2.Copyright©2008,Texas Instruments Incorporated Submit Documentation Feedback9Product Folder Link(s):TPS650250h t t p://oh t t p://oTPS650250SLVS843–TERMINAL FUNCTIONS(continued)TERMINALI/O DESCRIPTIONNAME NO.I This pin must be connected to a resistor divider between VDCDC3and GND.The output voltage of theDEFDCDC332DCDC3converter can be set in a range from0.6V to VINDCDC3.EN_DCDC120I VDCDC1enable pin.A logic high enables the regulator,a logic low disables the regulator.EN_DCDC219I VDCDC2enable pin.A logic high enables the regulator,a logic low disables the regulator.EN_DCDC318I VDCDC3enable pin.A logic high enables the regulator,a logic low disables the regulator.LDO REGULATOR SECTIONVINLDO15I Input voltage for LDO1and LDO2VLDO116O Output voltage of LDO1VLDO214O Output voltage of LDO2EN_LDO17I Enable input for LDO1and LDO2.Logic high enables the LDOs,logic low disables the LDOsEN_Vdd_alive24I Enable input for Vdd_alive LDO.Logic high enables the LDO,logic low disables the LDOVdd_alive12O Output voltage for Vdd_aliveFB_LDO111I Feedback pin for LDO1FB_LDO210I Feedback pin for LDO2CONTROL AND I2C SECTIONSelect between Power Safe Mode and forced PWM Mode for DCDC1,DCDC2and DCDC3.In Power Safe MODE23I Mode PFM is used at light loads,PWM for higher loads.If PIN is set to high level,forced PWM Mode isselected.If Pin has low level,then Device operates in Power Safe Mode.PWRFAIL21O Open drain output.Active low when PWRFAIL comparator indicates low VBAT condition.PWRFAIL_SNS30I Input for the comparator driving the/PWRFAIL output10Submit Documentation Feedback Copyright©2008,Texas Instruments IncorporatedProduct Folder Link(s):TPS650250分销商库存信息:TITPS650250RHBT TPS650250RHBR TPS650250EVM-447。