2SD2098 PDF规格书
超级电容规格书--BRP002R8L106FA (2.8V 10F)
自放电特性（电压保持特性） Self discharge characteristics (voltage holding characteristics)
正负极间电压大于等于 2.1V
测试条件
温度循环：－40±2℃→常温→＋ 65±2℃→常温 循环次数：5 次
施加电压：0V 温度：＋65±2℃ 时间：1000h
6
25℃ ∆V=2.16-1.08 I=50mA
步骤 1：＋25±2℃ 步骤 2：－40±2℃ 步骤 3：＋65±2℃ 步骤 4：＋25±2℃
施加电压：2.8V 温度：＋65±2℃ 时间：1000h 施加电压：2.8V 温度：＋25±2℃ 循环次数：500000 次
项目
引出端强度 Lead strength 可焊性 Solder ability 高低温循环特性 Temperature cycle
BIGCAP®产品规格书
PRODUCT SPECIFICATION
产品类型（Product Type） : 产品型号（Product Model）: 发布日期（Release Date） :
卷绕系列 BRP002R8L106FA
2016-04-01
Prepared 编制
Checked 审核
Approved 批准
存放寿命特性 Shelf life
湿热特性 Humidity Characteristics
容量 C ESR 漏电流 LC 外观 容量∆C ESR 漏电流 LC 外观 容量∆C ESR 漏电流 LC 外观
BRP002R8L106FA
引出端无损坏 超过 3/4 端子表面被锡层覆盖
满足初始规定值
无机械损伤或漏液 满足初始规定值 20%范围内 小于等于初始规定值 3 倍 小于等于初始规定值 无漏液或机械损伤 满足初始规定值 30%范围内 小于等于初始规定值 2 倍 小于等于初始规定值 4 倍 无漏液或机械损伤
SDM2U40CSP 40伏特 2A 霍夫曼栅屏电阻芯片尺寸包装说明书
SDM2U40CSP-7BDescription and ApplicationsThe SDM2U40CSP is a 40-volt 2A Schottky Barrier Rectifier that is optimized for low forward voltage drop and low leakage current, housed in a compact chip scale package (CSP) that occupies only 1.28mm 2 board space with low profile. The low thermal resistance enables designers to meet design challenges of increasing efficiency whilst at the same time reducing board space. It is ideally suited for use in portable applications as a: ∙ Blocking Diode ∙ Boost Diode ∙ Switching Diode ∙ Reverse Protection DiodeFeatures and Benefits∙ Low forward voltage (V F ) minimizes conduction losses and improves efficiency.∙ Reduced high temperature reverse leakage; Increased reliability against thermal runaway failure in high temperature operation. ∙ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ∙ Halogen and Antimony Free. “Green” Device (Note 3)Mechanical Data∙ Case: X3-WLB1608-2∙ Moisture Sensitivity: Level 1 per J-STD-020∙Terminals: NiAu Bump. Solderable per MIL-STD-202, Method∙ Polarity: Cathode Dot∙Weight: 0.001 grams (Approximate)Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See /quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /products/packages.html.Marking InformationX6= Product Type Marking Code YM=Date Code Marking Y or Y= Year (ex: F = 2018) M=Month (ex: 9= September) Dot Denotes Cathode PinCathodeAnode Pin #1Cathode NotchDevice SchematicX X6 YMPi n 1Maximum Ratings(@T A = +25°C, unless otherwise specified.)Single phase, half wave, 60Hz, resistive or inductive load.Thermal CharacteristicsNotes: 5. Device mounted on FR-4 PCB, 2oz. Copper, minimum recommended pad layout per /package-outlines.html.6. Device mounted on 1inch sq. copper pad, 2oz.7. Short duration pulse test used to minimize self-heating effect.Package Outline Dimensions (Note 8)Please see /package-outlines.html for the latest version.X3-WLB1608-2Note 8: Device side walls are electrically active bare silicon. Avoid contact of solder or flux on the side walls during the PCB assembly process.Suggested Pad LayoutPlease see /package-outlines.html for the latest version.X3-WLB1608-2Seating PlaneSDM2U40CSP-7B。
2SB1386中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」
V I /I = -4A/-0.1A
*
V = -2V, I = -0.5A
*
MHz V = -6V, I = -50mA, f=30MHz
pF V = -20V, I =0, f=1MHz
10-Dec-2010 版本B
第1页3
芯片中文手册,看全文,戳 特性曲线
转换频率 输出电容
*测量
采用脉冲电流.
(T A = 25°C除非另有说明）
符号
V V V
I I V h f C
Min.
Typ.
-30
-
-20
-
-6
-
-
-
-
-
-
-
82
-
-
120
-
60
Max.
-0.5 -0.5 -1.0 390 -
单元
测试条件
V IC=-50µA
V I = -1mA
V I = -50µA
2SB1386
-5A, -30V PNP硅低频晶体管
10-Dec-2010 版本B
分页：1 2 3
芯片中文手册,看全文,戳 特性曲线
2SB1386
-5A, -30V PNP硅低频晶体管
10-Dec-2010 版本B
第3页3
(T A = 25°C除非另有说明）
符号
额定值
V
-30
V
-20
V
-6
I
-5 -10
P
0.5 2
T ,T
150, -55~150
单元 V V V
A(DC) A（脉冲）
W
°C
2SD1821 PDF规格书
■ Features
● Low Collector-to-Emitter Saturation Voltage ● Low noise voltage NV. ● Complementary to 2SB1220
1 Base 2 Emitter 3 Collector
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Noise voltage Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) VBE(sat) hFE NV Cob fT Test Conditions Ic= 100 μA， IE= 0 Ic= 1 mA， IB= 0 IE= 100μA， IC= 0 VCB= 100 V , IE= 0 VEB= 5V , IC=0 IC=30mA, IB=3mA IC=30mA, IB=3mA VCE= 5V, IC= 10mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB= 10V, IE= 0,f=1MHz VCE= 10V, IE= -10 mA,f=200MHz 130 150 2.3 150 Min 150 150 5 1 0.1 1 1.2 330 mV pF MHz uA V V Typ Max Unit
深圳鲁光电子二极管、三极管系列规格书2
Excellent linearity of Current Gain Low saturation voltageComplementary to TPT5609MAXIMUM RATINGS (T=25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditionsMINTYPMAXUNITCollector-base breakdown voltage V (BR)CBO I C =-10µA, I E =0 -25 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA, I B =0 -20 V Emitter-base breakdown voltage V (BR)EBO I E =-10µA, I C =0 -5V Collector cut-off current I CBO V CB =-20V, I E =0 -1 µA Emitter cut-off current I EBO V EB =-5V, I C =0-1 µA DC current gainh FE V CE =-2V, I C =-500mA 60240 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B =-80mA -0.5V Base-emitter voltage V BEV CE =-2V, I C =-500mA-1VTransition frequency f TV CE =-2V, I C =-500mA350 MHzCollector output capacitanceC obV CB =-10V, I E =0, f=1MHz38 pFCLASSIFICATION OF h FE Rank A B C1. EMITTER2. COLLECTOR3. BASE12 3 FeaturesTO-92LDimensions in inches and (millimeters)Typical CharacteristicsDimensions in inches and (millimeters)DO-15FeaturesHigh efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, freewheeling, and polarity protection application.Mechanical DataCases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Polarity: Color band denotes cathode High temperature soldering guaranteed: 260o C/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Weight: 0.40gramsMaximum Rating and Electrical CharacteristicsRating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%Type NumberSymbol HER 201 HER 202 HER 203HER 204 HER 205HER 206HER 207HER 208Units Maximum Recurrent Peak Reverse Voltage V RRM 50100 200 300 400600 8001000V Maximum RMS Voltage V RMS 3570140 210 280420 560700 VMaximum DC Blocking VoltageV DC50100 200 300 400600 8001000VMaximum Average Forward RectifiedCurrent .375 (9.5mm) lead length@T A = 55 oCI (AV) 2.0 A Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method )I FSM60 AMaximum Instantaneous Forward Voltage @ 2.0AV F 1.0 1.3 1.7 V Maximum DC Reverse Current@Ta=25 o C at Rated DC Blocking Voltage @ Ta=125 o CI R5.0 150uA uAMaximum Reverse Recovery Time ( Note 1) Trr 50 75 nS Typical Junction Capacitance ( Note 2 ) Cj 50 35 pFTypical Thermal Resistance R θJA 60 oC/WOperating Temperature RangeT J -65 to +150 oCStorage Temperature RangeT STG -65 t o +150 oC Notes:1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.3. Mount on Cu-Pad Size 10mm x 10mm on PCB.HER201-HER2082.0 AMP. High Efficient Rectifiers1001010.10.01RATINGS AND CHARACTERISTIC CURVES(HER201THRU HER208)FIG.6-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM50NONINDUCTIVE2.Rise Time=10ns max.Sourse Impedance=50ohms10NONINDUCTIVE-1.0A-0.25A+0.5AFOR FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENTPEAKFORWARDSURGECURRENT.(A)125102010050NUMBER OF CYCLES AT60HzFIG.4-TYPICAL JUNCTION CAPACITANCEJUNCTIONCAPACITANCE.(pF)75REVERSE VOLTAGE.(V)FIG.1-MAXIMUM FORWARD CURRENT DERATINGAVERAGEFORWARDCURRENT.(A)3.0AMBIENT TEMPERATURE.(C)OFIG.5-TYPICAL INSTANTANEOUSFORWARD CHARACTERISTICSINSTANTANEOUSFORWARDCURRENT.(A)FORWARD VOLTAGE.(V)FIG.2-TYPICAL REVERSE CHARACTERISTICS1INSTANTANEOUSREVERSECURRENT.A)Dimensions in inches and (millimeters)DO-201ADFeaturesHigh efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, freewheeling, and polarity protection application .Mechanical DataCases: Molded plastic Epoxy: UL 94V0 rate flame retardant Polarity: Color band denotes cathode High temperature soldering guaranteed:260oC/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs., (2.3kg) tension Weight: 1.2gramsMaximum Ratings and Electrical CharacteristicsRating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%Type NumberSymbol HER 301HER 302 HER303HER 304 HER 305HER 306HER 307 HER308Units Maximum Recurrent Peak Reverse Voltage V RRM 50100 200300 400600800 1000 V Maximum RMS Voltage V RMS 3570140210 280420560 700V Maximum DC Blocking VoltageV DC 50100 200300 400600800 1000 VMaximum Average Forward Rectified Current .375 (9.5mm) Lead Length @T A = 55 o CI (AV) 3.0 APeak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )I FSM 150 A Maximum Instantaneous Forward Voltage @ 3.0AV F 1.0 1.3 1.7 VMaximum DC Reverse Current@T A =25 o C at Rated DC Blocking Voltage @ T A =125 o CI R10 250 uA uAMaximum Reverse Recovery Time (Note 1) Trr 50 75 nS Typical Junction capacitance (Note 2) Cj 70 50 pFTypical Thermal Resistance R θJA 40 oC/W Operating Temperature RangeT J -65 to +150 o C Storage Temperature RangeT STG -65 to +150 o CNotes:1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.3. Mount on Cu-Pad Size 16mm x 16mm on PCB.0.20.60.8 1.0 1.2 1.40.011100FIG.6-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM50NONINDUCTIVE2.Rise Time=10ns max.Sourse Impedance=50ohms10NONINDUCTIVE-1.0A-0.25A+0.5AFORRATINGS AND CHARACTERISTIC CURVES(HER301THRU HER308)FIG.4-TYPICAL JUNCTION CAPACITANCEJUNCTIONCAPACITANCE.(pF)0.10.5152102050100200500255075100125150175REVERSE VOLTAGE.(V)FIG.3-MAXIMUM NON-REPETITIVE FORWARDPEAKFORWARDSURGECURRENT.(A)NUMBER OF CYCLES AT60HzFIG.1-MAXIMUM FORWARD CURRENT DERATINGCURVEAVERAGEFORWARDCURRENT.(A)4.06.05.0AMBIENT TEMPERATURE.(C)OFIG.5-TYPICAL INSTANTANEOUSFORWARD CHARACTERISTICSINSTANTANEOUSFORWARDCURRENT.(A)FORWARD VOLTAGE.(V)FIG.2-TYPICAL REVERSE CHARACTERISTICS0.11100PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)INSTANTANEOUSREVERSECURRENT.A)SM AJFeaturesFor surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and placeHigh surge current capabilityPlastic material used carries UnderwritersLaboratory Classification 94V-0 High temperature soldering:260oC / 10 seconds at terminalsMechanical DataCase: Molded plasticPolarity: Indicated by cathode band Packaging: 12mm tape Weight: 0.084 gramMaximum Ratings and Electrical CharacteristicsRating at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%Type NumberSymbol M 1 M2 M3 M4 M5 M6 M7Units Maximum Recurrent Peak Reverse Voltage V RRM 50100 200400 600 800 1000 V Maximum RMS Voltage V RMS 3570140280 420 560 700 V Maximum DC Blocking Voltage V DC50100 200400 600 800 1000 V Maximum Average Forward RectifiedCurrent @T L =110o CI (AV) 1.0 APeak Forward Surge Current, 8.3 ms SingleHalf Sine-wave Superimposed on RatedLoad (JEDEC method )I FSM 30AMaximum Instantaneous Forward Voltage @ 1.0AV F 1.1 VMaximum DC Reverse Current @ T A =25 o C at Rated DC Blocking Voltage @ T A =125 o C I R1.0 50 uA uATypical Reverse Recovery Time (Note 1) Trr 1.5 uS Typical Junction Capacitance ( Note 2 ) Cj12 pFNon-Repetitive Peak Reverse Avalanche Engergy at 25o C, I AS =1A, L=10mH E AS 5 mJTypical Thermal Resistance (Note 3)R θJL R θJA27 7530 85oC/WOperating Temperature Range T J -55 to +150 o C Storage Temperature Range T STG -55 to +150oCNotes: 1. Reverse Recovery Test Conditions: I F =0.5A, I R =1.0A, I RR =0.25A2. Measured at 1 MHz and Applied V R =4.0 Volts3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.Dimensions in millimetersRATINGS AND CHARACTERISTIC CURVES (M 1THRU M 7)FIG.5-TYPICAL FORWARD CHARACTERISTICS I N S T A N T A N E O U S F O R W A R D C U R R E N T .(A )0.40.60.81.01.21.41.61.82.00.10.010.050.55501000.020.2211020FORWARD VOLTAGE.(V)FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENTP E A K F O R W A R D S U R G E C U R R E N T .(A )5210100NUMBER OF CYCLES AT 60HzFIG.4-TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E .(p F )0.10.011101002520100501REVERSE VOLTAGE.(V)FIG.1-MAXIMUM FORWARD CURRENT DERATINGCURVEA V E R A G E F O R W A R D C U R R E N T .(A )020*********1201401601.21.00.80.60.40.20LEAD TEMPERATURE.(C)oFIG.2-TYPICAL REVERSE CHARACTERISTICS20406080100120140110100PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)I N S T A N T A N E O U S R E V E R S E C U R R E N T .A )FIG.6-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM50WNONINDUCTIVE1W NONINDUCTIVEOSCILLOSCOPE (NOTE 1)PULSEGENERATOR (NOTE 2)DUT(+)50Vdc (approx)(-)NOTES:1.Rise Time=7ns max.Input Impedance=1megohm 22pf2.Rise Time=10ns max.Sourse Impedance=50ohms(-)(+)10WNONINDUCTIVE-1.0A0+0.5AFORPower dissipationMARKING: Y11ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO I C = 100μA, I E =0 40 V Collector-emitter breakdown voltage V(BR)CEO *I C =1mA , I B =0 25 V Emitter-base breakdown voltage V(BR)EBO I E = 100μA, I C =06VCollector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEOV CE = 20V, I B =0 0.1 μAh FE(1) V CE =1V, I C =5mA 45 h FE(2) V CE =1V, I C =100mA 80 300 DC current gainh FE （3）V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat)I C =800mA, I B = 80mA1.2VTransition frequencyf T V CE =6V, I C = 20mA , f=30MHz150 MHz* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. C LASSIFICATION OF h FE(2)Rank L HRange80-200 200-3001. BASE2. EMITTER3. COLLECTORFeaturesDimensions in inches and (millimeters)SOT-23Power dissipationELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditionsMINMAXUNITCollector-base breakdown voltage V (BR)CBO I C = 100μA,I E =0 40 VCollector-emitter breakdown voltage V (BR)CEO* I C = 1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA, I C =0 6 VCollector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C =5mA 45 h FE(2) V CE =1V, I C =100mA 80 400 DC current gainh FE(3)V CE =1V, I C =800mA40Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA1.2VTransition frequencyf TV CE =6V, I C = 20mA , f=30MHz150 MHz* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.FeaturesTO-92Dimensions in inches and (millimeters)1. EMITTER2. BASE3. COLLECTORPower dissipationMARKING: Y21ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditions MIN MAXUNIT Collector-base breakdown voltage V(BR)CBO I C = -100μA , I E =0 -40 V Collector-emitter breakdown voltage V(BR)CEO *I C = -1mA , I B =0 -25VEmitter-base breakdown voltage V(BR)EBO I E = -100μA, I C =0-6 VCollector cut-off current I CBO V CB = -35V , I E =0 -0.1 μA Collector cut-off current I CEOV CE = -20V , I B =0 -0.1 μA h FE(1) V CE =-1V, I C =-5mA 45 h FE(2) V CE =-1V, I C =-100mA 85 300 DC current gainh FE(3)V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C = -800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat)I C =-800mA, I B =-80mA-1.2VTransition frequencyf T V CE =-6V, I C = -20mA f=30MHz150 MHz* Pulse Test :pulse width ≤ 300µs , duty cycle ≤2%.CLASSIFICATION OF h FE(2)Rank L HRange85-200 200-3001. BASE2. EMITTER3. COLLECTORDimensions in inches and (millimeters)SOT-23FeaturesTypical characteristicsEpitaxial planar die constructionComplementary NPN Type available(MMBT2222A)MARKING:2FMAXIMUM RATINGS(T A =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditionsMINTYPMAXUNITCollector-base breakdown voltage V (BR)CBO I C =-10μA,I E =0 -60 VCollector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -60 VEmitter-base breakdown voltage V (BR)EBO I E =-10μA,I C =0 -5 VCollector cut-off current I CBO V CB =-50V,I E =0 -20 n ACollector cut-off current I CE0 V CE =-30V,V EB(0ff)=-0.5V -50 nA Emitter cut-off currentI EBO V EB =-3V,I C =0 -10 nAh FE(1) V CE =-10V,I C =-0.1mA 75 h FE(2)V CE =-10V,I C =-1mA 100 h FE(3) V CE =-10V,I C =-10mA 100 h FE(4) V CE =-10V,I C =-150mA 100 300DC current gainh FE(5)V CE =-10V,I C =-500mA50V CE(sat) I C =-150mA,I B =-15mA -0.4 VCollector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -1.6 VV BE(sat) I C =-150mA,I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA,I B =-50mA -2.6 VTransition frequency f T V CE =-20V,I C =-50mA,f=100MHz 200 MHz Delay time t d 10 nSRise time t rV CC =-30V,I C =-150mA I B1=- 15mA25 nSStorage time t S225 nS Fall timet f V CC =-6V,I C =-150mA,I B1=-I B2=-15mA60 nS1. BASE2. EMITTER3. COLLECTORDimensions in inches and (millimeters)SOT-23FeaturesTypical CharacteristicsAs complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die constructionMARKING: 1AMMAXIMUM RATINGS (T A =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditionsMINMAXUNITCollector-base breakdown voltageV CBO I C = 10μA, I E =0 60 VCollector-emitter breakdown voltageV CEO I C = 1mA, I B =0 40 VEmitter-base breakdown voltage V EBO I E =10μA, I C =0 6 VCollector cut-off current I CBO V CB =60V, I E =0 0.1 μACollector cut-off current I CEX V CE =30V,V BE(off)=3V 50 nA Emitter cut-off currentI EBO V EB =5V, I C =0 0.1 μAh FE(1)V CE =1V, I C =10mA 100 400 h FE(2) V CE =1V, I C = 50mA 60 DC current gainh FE(3)V CE =1V, I C = 100mA 30 Collector-emitter saturation voltage V CE(sat) I C =50mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE(sat)I C = 50mA, I B = 5mA0.95VTransition frequency f T V CE = 20V, I C = 10mA,f=100MHz 300 MHz Delay Time td 35 nS Rise Time tr V CC =3V,V BE =-0.5V I C =10mA, I B1=-I B2=1.0mA 35 nS Storage Time ts 200 nS Fall TimetfV CC =3.0V,I C =10mAdc I B1=-I B2=1mA50 nSCLASSIFICATION OF h FE(1)Rank O Y G Range100-200 200-300 300-4001. BASE2. EMITTER3. COLLECTORFeaturesDimensions in inches and (millimeters)SOT-23Typical CharacteristicsAs complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die constructionMARKING: 2AMAXIMUM RATINGS (T A =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditionsMINMAXUNITCollector-base breakdown voltage V (BR)CBO I C = -10μA,I E =0 -40 VCollector-emitter breakdown voltage V (BR)CEO I C = -1mA, I B =0 -40 VEmitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, E =0 -0.1 μA Collector cut-off current I CEX V CE =-30V,V BE(off)=-3V -50 nA Emitter cut-off currentI EBO V EB = -5V, I C =0 -0.1 μA h FE(1)V CE =-1V, I C =-10mA 100 300 h FE(2) V CE = -1V, I C =-50mA 60 DC current gainh FE(3)V CE = -1V, I C =-100mA 30Collector-emitter saturation voltage V CE(sat) I C =-50mA, I B =-5mA -0.4 V Base-emitter saturation voltage V BE(sat) I C =- 50mA, I B =- 5mA-0.95 V Transition frequency f TV CE =-20V, I C =-10mA, f=100MHz 250MHzDelay Time t d 35 nS Rise Time t rV CC =-3.0V,V BE =-0.5V I C =-10mA,I B1=-1.0mA35 nSStorage Time t s 225 nS Fall Timet fV CC =-3.0V,I C =-10mA I B1=I B2=-1.0mA75 nSCLASSIFICATION OF h FE1Rank O Y1. BASE2. EMITTER3. COLLECTORFeaturesDimensions in inches and (millimeters)SOT-23Typical CharacteristicsMMBT3906 SOT-23 Transistor(PNP)Epitaxial planar die constructionComplementary PNP Type available(MMBT2907A)MARKING: 1PMAXIMUM RATINGS (T A =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)ParameterSymbol Test conditions MINTYPMAXUNITCollector-base breakdown voltage V (BR)CBO I C = 10μA, I E =075 VCollector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =06 VCollector cut-off current I CBO V CB =60V, I E =0 10 n A Collector cut-off current I CEX V CE =60V, V BE(off)=3V 10 n A Emitter cut-off currentI EBO V EB = 3V,I C =0 0.1 μA h FE(1)V CE =10V, I C =150mA 100 300 h FE(2) V CE =10V, I C = 0.1mA 40 DC current gainh FE(3)V CE =10V, I C = 500mA 42 Collector-emitter saturation voltage V CE (sat) I C =500 mA, I B = 50mA I C =150 mA, I B =15mA 1 0.3 V Base-emitter saturation voltage V BE (sat)I C =500 mA, I B = 50mA I C =150 mA, I B =15mA 0.62.0 1.2VTransition frequency f T V CE =20V, I C = 20mA f=100MHz300 MHzDelay time t d 10 nS Rise time t r V CC =30V, V BE(off)=-0.5V I C =150mA , I B1= 15mA 25 nS Storage time t S 225 nS Fall timet fV CC =30V, I C =150mA I B1=-I B2=15mA60 nS1. BASE2.EMITTER3.COLLECTORMMBT 2222ASOT-23 Transistor(NPN )Dimensions in inches and (millimeters)SOT-23CLASSIFICATION OF h FE (1)Rank L HFeatures。
罗姆公司贴片元件上的印字表
TransistorsAbbreviated markings on mini-mold transistors!EMT3 and UMT3 labelsOn general transistors, the product and h FE rank areindicated by 2 or 3 letters. On digital transistors, theproduct type is indicated by a 2-digit number.FE ranks.Digital transistorGeneral transistors!SMT3 labelsOn the SMT3 package, the product and h FE rank areindicated by 2 or 3 letters on general transistors, and theproduct is indicated by a 2-digit number on digitaltransistors.Furthermore, on SMT products with direct laser labelsthere is also a number indicating the week ofmanufacture. The direction of the number indicateswhether the year of manufacture was an odd year or aneven year.26352635SMT3 labels(a) Manufactured during the35th week of an odd year.(b) Manufactured during the35th week of an even year.!MPT3 labelsThe label on the MPT3 packages indicates the product,h FE rank, and month of manufacture using 4 letters.DA indicates the product.T indicates the month of manufacture.R indicates the h FE rank.MPT3 labelsThe month of manufacture is indicated as shown belowby a letter, excluding I and O. (This method is also usedon other packages.)Month ofmanufacture123456789101112Even year A B C D E F G H J K L MOdd year N P Q R S T U V W X Y Z!UMT5, UMT6, SMT5, and SMT6 labelsThe labels on UMT5, UMT6, SMT5, and SMT6packages show the product name excluding the initialtwo letters (UM or FM), and consist of 2 or 3 letters. Onthe SMT6 packages, the week of manufacture is alsoshown (similar to the SMT3). The marking is made usingdirect laser labeling.TransistorsE11DTA113ZE PackageLabelProduct name E13DTA143ZE E42DTC123JE E23DTC143ZE E32DTA123JE K14DTA114GE K26DTC144GE Z21DTC113ZEEMT3TransistorsPackageLabelProduct name 45DTC124XUA 52DTA123YUA 54333543DTA114YUA 62DTC123YUA 64DTC114YUA 69DTC115EUA 74DTA114WUA 76DTA144WUA 84DTC114WUA 86DTC144WUA 93DTA143TUA 95DTA124TUA 96DTA144TUA 99DTA115TUA 9A DTA125TUA 111DTA113ZUA 113DTA143ZUA 123DTC143ZUA 132DTA123JUA 142DTC123JUA 156DTA144VUA 166DTC144VUA 121DTC113ZU H02DTC323TU H04DTC314TU H27DTC363EU K14DTA114GUA K16DTA144GUA K19DTA115GUA K24DTC114GUA K25DTC124GUA K26DTC144GUA K29DTC115GUA Z21DTC113ZUA G1K BC848BW G3K BC858BW R1A UMT3904R1PUMT2222ADTA143XUA DTA124XUA DTC143XUA 26DTC144EUA 29DTC115EUA PackageLabelProduct name R2T R2XUMT4403UMT4401R2A UMT3906R2F UMT2907A UMT3UMT3TransistorsG08DTD133HKA G11DTB113ZK G21DTD113ZK G3C DTB122JK G4C DTD122JK G98DTB133HKA H02DTC323TK H03DTC343TK H04DTC314TK H07DTC363TK H27DTC363EK K14DTA114GKA K15DTA124GKA K16DTA144GKA K19DTA115GKA K24DTC114GKA K25DTC124GKA K26DTC144GKA K29DTC115GKA L14DTB114GK L24DTD114GK Z21DTC113ZKA R1A MMST3904R1G MMSTA06R1K MMST6428R1M MMSTA13R1N MMSTA14R1O MMST5088R1P MMST2222A R2A MMST3906R2B MMST2907R2F MMST2907A R2G MMSTA56R2K MMST8598R2O MMST5087R2PMMST508626DTC144EKA 29DTC115EKA 33DTA143XKA 35DTA124XKA 43DTC143XKA 45DTC124XKA 52DTA123YKA 54DTA114YKA 62DTC123YKA 64DTC114YKA 69DTC115EKA 74DTA114WKA 76DTA144WKA 84DTC114WKA 86DTC144WKA 91DTA113TKA 93DTA143TKA 94DTA114TKA 95DTA124TKA 96DTA144TKA 99DTA115TKA 9A DTA125TKA E11DTA113ZKA E13DTA143ZKA E23DTC143ZKA E32DTA123JKA E42DTC123JKA E56DTA144VKA E66DTC144VKA F02DTD123TK F03DTD143TK F11DTB113EK F12DTB123EK F13DTB143EK F14DTB114EK F21DTD113EK F22DTD123EKF23DTD143EK F24DTD114EK F52DTB123YK F62DTD123YK F92DTB123TK F93DTB143TK F94DTB114TK 16DTA144EKA 19DTA115EKA 22DTC123EKA 23DTC143EKA 24DTC114EKA 25DTC124EKA PackageLabelProduct name SMT3SMT3PackageLabelProduct nameTransistorsSMT3RZCMMST4124RVZ MMST4126RAV MMST8098RAT MMSTA28R3B MMST918R2X MMST4401R2V MMSTA64R2T MMST4403PackageLabelProduct namePackageLabelProduct name SST313DTA143ECA 14DTA114ECA 15DTA124ECA 24DTC114ECA 25DTC124ECA 96DTA144TCA 04DTC114TCA E23DTC143ZCA F13DTB143EC F23DTD143EL F52DTB123YC G1E BC847A G1F BC847B G1G BC847C G1J BC848A G1K BC848B G1L BC848C G3E BC857A G3F BC857B G3K BC858B G5B BC807-25G6B BC817-25GAB BCW60B GAC BCW60C GAD BCW60D GAH BCX70H GAJ BCX70J GAK BCX70K GBB BCW61B GBC BCW61C GBG BCX71G GBH BCX71H GBJBCX71JPackageLabelProduct name SST3GH1BCW69GH2BCW70GK1BCW71GK2BCW72GMA BFS17GT1BCX17GU1BCX19R1A SST3904R1G SSTA06R1H SSTA05R1J SST6427R1M SSTA13R1N SSTA14R1P SST2222A R2A SST3906R2F SST2907A R2G SSTA56R2T SST4403R2X SST4401R3B SST8245R97SSTTIS97RAT SSTA28RBR SST6838RFQ SST6839RKM RK7002RZCSST4124GC2BCW30GD1BCW31GD2BCW32GD3BCW33GEC BCW65CTransistorsPackage Label Product name UMT5A1UMA1NA10UMA10NA11UMA11NA2UMA2NA3UMA3NPackage Label Product name UMT5A4UMA4NA5UMA5NA6UMA6NA7UMA7NA8UMA8NA9UMA9NC1UMC1NC2UMC2NC3UMC3NC4UMC4NC5UMC5NG1UMG1NG10UMG10NG11UMG11NG2UMG2NG3UMG3NG4UMG4NG5UMG5NG6UMG6NG7UMG7NG8UMG8NG9UMG9NK1UM5K1NL1UML1NL2UML2NS1UMS1NS2UMS2NW10UMW10NW1UMW1NW2UMW2NW6UMW6NW7UMW7NW8UMW8NY1UMY1NY3UMY3NTransistorsB4UMB4N B5UMB5N B6UMB6N B8UMB8N B9UMB9N D12UMD12N D2UMD2N D3UMD3N D6UMD6N H1UMH1N H10UMH10N H11UMH11N H14UMH14N H2UMH2N H3UMH3N H4UMH4N H5UMH5N H6UMH6N H7UMH7N H8UMH8N H9UMH9N K1UM6K1N T1UMT1N T2UMT2N X1UMX1N X2UMX2N X3UMX3N X4UMX4N X5UMX5N Z1UMZ1N Z2UMZ2NA1FMA1A A10FMA10A A11FMA11A A2FMA2A A3FMA3AB2UMB2N B3UMB3N PackageLabelProduct name UMT6PackageLabelProduct name SMT5B1UMB1N B10UMB10N B11UMB11N PackageLabelProduct name SMT5A5FMA5A A6FMA6A A7FMA7A A8FMA8A A9FMA9A C1FMC1A C2FMC2A C3FMC3A C4FMC4A C5FMC5A C6FMC6A C7FMC7A G1FMG1A G11FMG11A G12FMG12G13FMG13G2FMG2A G3FMG3A G4FMG4A G5FMG5A G6FMG6A G7FMG7A G8FMG8A G9FMG9A Q2FMQ2S1FMS1A S2FMS2N S3FMS3S4FMS4W1FMW1W10FMW10W2FMW2W3FMW3W4FMW4W6FMW6W7FMW7W8FMW8Y1FMY1A Y3FMY3A Y4FMY4A Y5FMY5Y6FMY6A4FMA4ATransistorsB2IMB2A B3IMB3A B4IMB4A B5IMB5A B6IMB6A B7IMB7A B8IMB8A B9IMB9A D1IMD1A D10IMD10A D14IMD14D16IMD16A D2IMD2A D3IMD3A D4IMD6A D8IMD8A D9IMD9A H1IMH1A H10IMH10A H11IMH11A H14IMH14A H15IMH15A H2IMH2A H3IMH3A H4IMH4A H5IMH5A H6IMH6A H7IMH7A H8IMH8A H9IMH9A T2IMT2A T3IMT3A T4IMT4X1IMX1X17IMX17X2IMX2T1IMT1A T17IMT17B1IMB1A B10IMB10A B11IMB11A B16IMB16B17IMB17A PackageLabelProduct name SMT6PackageLabelProduct name SMT6X3IMX3X4IMX4X5IMX5X8IMX8X9IMX9Z1IMZ1A Z2IMZ2A Z4IMZ4。
2SD596贴片三极管规格书
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SD596 TRANSISTOR (NPN)
SOT-23
FEATURES z High DC Current gain. z Complimentary to 2SB624
1.BASE 2.EMITTER 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
DV1
Range
110-180
DV2 135-220
DV3 170-270
DV4 200-320
DV5 250-400
B,Jul,2013
Typical Characteristics
2SD596
COLLECTOR CURRENT I (mA) C
(V)
22-16-2090;中文规格书,Datasheet资料
Assy Proc: Hooks Cut: Housing No: Terminal No: Dim C: Plating: Packaging: Voids: Material No
22-14-2024 22-14-2034 22-14-2044 22-14-2054 22-14-2064 22-14-2074 22-14-2084 22-14-2094 22-14-2104 22-14-2114 22-14-2124 22-14-2134 22-14-2144 22-14-2154 22-14-2164 22-14-2174 22-14-2184 22-14-2194 22-14-2204 22-14-2214 22-14-2224 22-14-2234 22-14-2244 22-14-2254
/
KK 100 PCB ASSY 2-25 CKT
4455 SERIES
A-4455- *
ASSY PROCEDURE A=RIGHT ANGLE B=BOTTOM ENTRY C=TOP ENTRY
STANDARD PRODUCT
*
N
*
*-*
HOUSING TYPE A=4455-AN B=4455-BN E=4455-NHH H=4455-N2 P=4455-NR (HOOKS CUT OFF) R=4455-NR W=4455-N-2 (HOOKS CUT OFF) Y=4455-N (HOOKS CUT OFF) Z=4455-N NO OF CIRCUITS TERMINAL TYPE Code A B C D F G J L M T Number 4316-4 6516-4 6516-5C 4316-3B 6516-6C 4316-3 6516-3B 6516-3C 6516-4A 4316-4A Material Brass Phos Bronze Phos Bronze Brass Phos Bronze Brass Phos Bronze Phos Bronze Phos Bronze Brass Form Standard Standard Cat Ear / V Std / V Cat Ear / V Standard Std / V Cat Ear / V Cat Ear Cat Ear VOID LOCATION NUMBER = CIRCUIT VOIDED MULTIPLE VOIDS START WITH 51 BLANK = NONE
欧姆龙RFID
⑤本产品目录中述及的应用事例仅作为参考之用，实际使用时，应事前确认设备·装置的功能以及安全性等 之后，再进行使用。
Con la presente Omron dichiara che la RFID Sistema, V680-HS52Serie, V680-HS63 Serie, V680-HS65 Serie, V680-HA63B Serie sono conforme ai requisiti essenziali ed alle altre disposizioni pertinenti stabilite dalla direttiva 1999/5/CE.
6.价格
本手册中记载的标准价格仅供参考。此价格中不包含消费税。
7.适合范围
上述内容仅限日本国内地区的交易。 其他地区和海外的交易及使用注意事项请与当地销售网点的人员咨询。
RFID 系统
操作手册 3
前言
前言
安全注意事项
●安全使用警告标志 本说明书中的以下标志用于指出在确保安全使用 V680-HS63/-HS52/-HS65/-HA63B 和 V680-D2KF67/-D2KF67M/D2KF52M/-D8KF68/-D32KF68系统时，必须警惕的地方。这些注意事项中包含重要的安全信息，请务必阅读。
前言
放大器 V680-HA63B
天线
V680-HS52 V680-HS63 V680-HS65
英语 芬兰语 荷兰语 法语 瑞典语 丹麦语 德语 希腊语 意大利语 西班牙语 葡萄牙语 罗马尼亚语
2098, 规格书,Datasheet 资料
6/9/99 SY/EH/LS
Sales: 800-4990-2361 Fax: 888-403-3360 Technical Assistance: 800-241-2060
PomonaACCESS 90126 (800) 444-6785 or (425) 446-6010 More drawings available at
6/9/99 SY/EH/LS
Sales: 800-4990-2361 Fax: 888-403-3360 Technical Assistance: 800-241-2060
PomonaACCESS 90126 (800) 444-6785 or (425) 446-6010 More drawings available at
Pomona
®
Model 2098 Phenolic Box Component Mounting Banana Jack To Double Plug
MATERIALS: Polarity Marker: Color: Red Banana Plug Springs: Beryllium Copper, Cond. H.T. Finish: Nickel plated per QQ-N-290, Class 2, 200/300 microinches Banana Plug Bodies: Brass, Alloy 360 ½ Hard. Finish: Nickel plated Solder Turret Terminals and Banana jacks: Brass, Alloy 360 ½ Hard Finish: Bright tin plated. Molded Housing: Electrical grade Phenolic. Color: Black Marking: “MODEL 2098 POMONA ELECTRONICS CALIF.” Cover: Phenolic Plate. Color: Black Screws: 2 ea. #2-56 x (3/16”) Pan HD. - Steel RATINGS: Operating Temperature: +150°C. (+302°F.) Max. Current: 15 Amperes
SD6924AS 评估板说明书
SD6924AS_评估板说明书_1.0 SD6924AS评估板说明书18W LED驱动器声明：♦士兰保留本文档的更改权，恕不另行通知！♦产品提升永无止境，我公司将竭诚为客户提供更优秀的产品！目录1.LED驱动基本规格 (2)1.1.输入特性 (2)1.2.输出特性 (2)1.3.性能说明 (2)1.4.保护特点 (2)1.5.工作环境 (2)2.LED驱动文件资料 (2)2.1.原理图 (2)2.2.元器件表 (3)2.3.PCB文件 (3)2.4.变压器设计 (4)2.4.1.电感结构 (4)2.4.2.电感量设计及测试 (4)2.4.3.原副边绕组绕制方法 (4)2.5.DEMO外观图 (4)3.性能测试评估 (5)3.1.性能亮点 (5)3.2.整机性能概要 (5)3.3.测试设备 (5)3.4.输入特性 (5)3.4.1.效率 (5)3.4.2.PF (5)3.5.输出特性 (6)3.5.1.LED电流调整率 (6)3.5.2.LED电流温度特性 (6)3.5.3.LED电流纹波 (6)3.5.4.LED电流过冲 (6)3.5.5.启动延时 (7)4.保护功能 (8)4.1.过压保护 (8)4.2.输出短路保护 (8)4.3.其它数据与波形 (9)4.3.1.MOSFET VDS和整流二极管反向电压Vrm (9)4.3.2.功率管VDS与采样电阻电压Vcs (9)1.LED驱动基本规格1.1.输入特性♦交流输入额定电压范围100Vac～240Vac♦交流输入电压范围90Vac～264Vac♦交流输入电压频率范围47Hz～63Hz1.2.输出特性♦输出电压50V~80V♦输出电流0.24A♦输出电流精度±3%1.3.性能说明♦最大输出功率(Po_max) 19.2W♦效率(ŋ) >87.68%(通过认证)♦功率因素(PF) >0.9♦开机延迟时间<1.084S @90Vac满载♦EMI(EN55015) PASS1.4.保护特点♦输出短路保护自动重启♦输出开路保护自动重启1.5.工作环境♦工作温度范围-40°C～+85°C♦贮存温度范围-40°C～+120°C2.LED驱动文件资料2.1.原理图2.2.元器件表2.3.PCB文件顶层丝印2.4. 变压器设计 2.4.1. 电感结构2.4.2. 电感量设计及测试2.4.3. 原副边绕组绕制方法2.5. DEMO 外观图正面反面3.性能测试评估3.1.性能亮点♦效率>88.7%@230Vac♦较高的输出电流调整率@50V~80V ♦PF>0.89@全电压输入满载♦启动及连续启动均无电流过冲3.2.整机性能概要备注:以上测试均在温度25℃下进行，特别注明除外3.3.测试设备3.4.输入特性3.4.1.效率3.4.2.PF3.5.输出特性3.5.1.LED电流调整率3.5.2.LED电流温度特性3.5.3.LED电流纹波90Vac CH4：Io264Vac CH4：Io 3.5.4.LED电流过冲第一次启动90Vac CH4：Io264Vac CH4：Io连续开关机90Vac CH4：Io264Vac CH4：Io3.5.5. 启动延时90Vac CH3:Vin-ac CH4：Io264Vac CH1:Vin CH4：Io4. 保护功能4.1. 过压保护输出开路具体波形90Vac CH3:Vo264Vac CH3:Vo4.2. 输出短路保护输出短路具体波形Vin=90VacVin=90Vac 放大90Vac CH3:Vds CH4:IL90Vac CH3:Vds CH4:ILVin=264Vac Vin=264Vac 放大264Vac CH3:Vds CH4:IL264Vac CH3:Vds CH4:IL4.3.其它数据与波形4.3.1.MOSFET VDS和整流二极管反向电压Vrm4.3.2.功率管VDS与采样电阻电压Vcs90V正常满载工作CH3:Vds CH4:Ics CH3:Vds CH4:Ics264V 正常满载工作CH3:Vds CH4:IcsCH3:Vds CH4:Ics全世界销售机构联系方式中国中国浙江杭州市黄姑山路4号电话：*************传真：*************EMAIL:*********************.cn中国深圳福田区天安数码城时代大厦A座2003室电话：*************传真：*************EMAIL:******************.cn台湾台北市内湖区行善路56号5楼电话：02-8791-2482传真：02-8791-4431EMAIL:**********************.tw韩国京畿道，Anshan-City, Sangrok-Gu, Il-dong, Anshan-1 College, Venture B/D, Room #311 邮编：426701电话：+82-31-409-6858 / +82-70-8671-7415传真：+82-31-409-6857H/P : +86-186********EMAIL:*****************.cn产品名称：SD6924AS 文档类型：评估板说明书版权：杭州士兰微电子股份有限公司公司主页：http: //版本： 1.0 作者：林星宇修改记录：1.正式发布版本。
FOSAN富信电子 三极管 2SD2098-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2SD2098SOT-89Bipolar Transistor双极型三极管▉Features特点NPN Low Saturation Voltage低饱和压降▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO50V Collector-Emitter Voltage集电极发射极电压V CEO20V Emitter-Base Voltage发射极基极电压V EBO6V Collector Current集电极电流I C5000mA Power dissipation耗散功率P C(T a=25℃)500mW Thermal Resistance Junction-Ambient热阻RΘJA250℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Marking产品打标H FE120-270(Q)180-390(R)Mark AHQ AHRANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2SD2098■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage 集电极基极击穿电压(I C =50µA ，I E =0)BV CBO 50——V Collector-Emitter Breakdown Voltage 集电极发射极击穿电压(I C =1mA ，I B =0)BV CEO 20——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =50µA ，I C =0)BV EBO 6——V Collector-Base Leakage Current集电极基极漏电流(V CB =40V ，I E =0)I CBO ——0.5µA Collector-Base Leakage Current 集电极基极漏电流(V EB =5V ，I E =0)I EBO ——0.5µADC Current Gain直流电流增益(V CE =2V ，I C =500mA)H FE 120—390Collector-Emitter Saturation Voltage集电极发射极饱和压降(I C =4A ，I B =100mA)V CE(sat)——1V Output Capacitance输出电容(V CB =20V ，I E =0,f=1MH Z )C ob—30—pF Transition Frequency特征频率(V CE =6V ，I C =50mA)f T—150—MH ZANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2SD2098■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2SD2098■Dimension外形封装尺寸。
2DB1188Q-13;2DB1188R-13;中文规格书,Datasheet资料
40V PNP SURFACE MOUNT TRANSISTOR IN SOT89Features• Epitaxial Planar Die Construction• Low Collector-Emitter Saturation Voltage• Complementary NPN Type Available (2DD1766) • Ideally Suited for Automated Assembly Processes• Ideal for Medium Power Switching or Amplification Applications • “Lead Free”, RoHS Compliant (Note 1)• Halogen and Antimony Free. "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT89 • Case Material: Molded Plastic, "Green" Molding Compound.UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin annealed over Copper Leadframe(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Weight: 0.052 grams (approximate)Ordering Information (Note 3)Product Marking Reel size (inches) Tape width (mm)Quantity per reel2DB1188P-13 P23P 13 122,500 2DB1188Q-13 P23Q 13 12 2,500 2DB1188R-13 P23R 13 12 2,500Notes:1. No purposefully added lead2. Diodes Inc's "Green" policy can be found on our website at .3. For packaging details, go to our website at .Marking InformationP23x = Product Type Marking Code Where P23P = 2DB1188P P23Q = 2DB1188Q P23R = 2DB1188R= Manufacturers’ code marking YWW = Date Code MarkingY = Last Digit of Year (ex: 1 = 2011) WW = Week Code (01 – 53)Top ViewDevice SchematicPin Out - Top viewSOT89CEBMaximum Ratings@T A = 25°C unless otherwise specifiedValue UnitCharacteristic SymbolCollector-Base Voltage V CBO-40 V Collector-Emitter Voltage V CEO-32 V Emitter-Base Voltage V EBO-5 V Continuous Collector Current I C-2 A Peak Pulse Collector Current I CM-3 AThermal Characteristics @T A = 25°C unless otherwise specifiedValue UnitCharacteristic SymbolPower Dissipation (Note 4) P D 1 W Thermal Resistance, Junction to Ambient (Note 4) RθJA125 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °CNotes: 4. Device mounted on 15mm X 15mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditionsThermal CharacteristicsR TH vs Area P D vs AreaDerating CurveTemperature (°C)Transient Thermal ImpedanceT h Pulse Width (s)Pulse Power DissipationPulse Width (s)Copper Area (sqmm)M a x i m u m P o w e r (W )Copper Area (sqmm)T h e r m a l R e s i s t a n c e (°C /W )Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS (Note 5)Collector-Base Breakdown Voltage BV CBO-40 ⎯ ⎯ V I C = -50μA, I E = 0 Collector-Emitter Breakdown Voltage BV CEO-32 ⎯ ⎯ V I C = -1mA, I B = 0 Emitter-Base Breakdown Voltage BV EBO-5 ⎯ ⎯ V I E = -50μA, I C= 0 Collector Cutoff Current I CBO⎯ ⎯ -1 μA V CB = -20V, I E = 0 Emitter Cutoff Current I EBO⎯ ⎯ -1 μA V EB = - 4V, I C = 0 ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage V CE(sat) ⎯ -0.35 -0.8 V I C = -2A, I B= -0.2ADC Current Gain 2DB1188Ph FE82 ⎯ 180 ⎯ V CE = -3V, I C = -0.5A 2DB1188Q 120 270 2DB1188R 180 390SMALL SIGNAL CHARACTERISTICSCurrent Gain-Bandwidth Product f T ⎯ 120 ⎯MHz V CE = -5V, I C = -0.1A,f = 30MHzOutput Capacitance C obo⎯ 20 ⎯ pF V CB= -10V, f = 1MHz Notes:5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.-V , COLLECTOR EMITTER VOLTAGE (V)CE -I , C O L L E C T O R C U R R E N T (A )C Fig. 1 Typical Collector Currentvs. Collector-Emitter Voltage-I , COLLECTOR CURRENT (A)C h , D C C U R R E N T G A I NF E Fig. 2 Typical DC Current Gain vs. Collector Current (2DB1188Q)-I , COLLECTOR CURRENT (A)C -V , C O L L E C T O R E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T )Fig. 3 Typical Collector-Emitter Saturation Voltagevs. Collector Current-I , COLLECTOR CURRENT (A)C -V , B A S E E M I T T E R T U R N -O N V O L T A G E (V )B E (O N )Fig. 4 Typical Base-Emitter Turn-On Voltagevs. Collector Current-I , COLLECTOR CURRENT (A)C -V , B A S E E M I T T E R S A T U R A T I O N V O L T A G E (V )B E (S A T )Fig. 5 Typical Base-Emitter Saturation Voltagevs. Collector CurrentV , REVERSE VOLTAGE (V)R C , O U T P U T C A P A C I T A N C E (p F )o b o Fig. 6 Typical Output Capacitance Characteristics100120140I , Emitter Current (mA)E f , G A I N -B A N D W I D T H P R O D U C T (M H z )T Fig. 7 Typical Gain-Bandwidth Product vs. Emitter CurrentPackage Outline DimensionsSOT89Dim Min MaxA 1.40 1.60B 0.44 0.62 B1 0.35 0.54C 0.35 0.43D 4.40 4.60 D1 1.52 1.83E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mmHCSuggested Pad LayoutIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes IncorporatedDimensions Value (in mm)X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500分销商库存信息:DIODES2DB1188Q-132DB1188R-13。
D规格书
产品规格书SPECIFICATION客户名称（Customername）:山东润峰电子科技有限公司产品名称（Productrange）:功率型NTC热敏电阻型号（Model）:5D-9料Expectsthenumber）客户承认ACKNOWLEDGEMENTOFCUSTOMERS兹同意此规格书作为我公司MF72系列电阻的验收标准。
Weapprovethespecificationasourcheckingandacceptingstandardforth ethermistorsof MF72series.工程部EngineeringDept.品质部QualityDept.采购部PurchasingDeptNTC热敏电阻器主要技术参数The MainT echnicalParameters ofNTC Thermistor型号（Model）:MF725D-9 1、一般参数（Commonly Parameter）:(1)尺寸（mm）（Size）(2)材料（Materials）①封装材料（Wrapper）: 酚醛树脂②引线（Down-lead）: 镀锡钢包线③颜色（Coatingcolor）: 黑色2、主要技术参数（Parameterof Technology）:①25℃时零功率电阻值[?](ZeroPowerResistance@25℃): 5?±20%②B值(R25/R50)[K] (BValue): ≥2600③热时间常数[S] (ThermalRecoveryTimeCoefficient): ≈34④热耗散系数[mW/℃] (ThermalDissipationConstant): ≈11⑤工作温度[℃] (OperatingTemperature): -40-+150⑥最大稳态电流[A] (MaxSteadyStateCurrent): 3⑦最大电流时的残余电阻[?](At25℃ImaxResistance)≤0.21备注（NOTE）:①外观符合客户外观检验标准②印标：中性标记。
产品规格书 电子
产品规格书SPECIFICATIONSCR01-AAA批 准 审 核 制 定年 月 日 年 月 日 年 月 日* * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * 深 圳 市 楚 东 电 子 有 限 公 司S H E N Z H E N C H U D O N G E L E C T R I C C O .,L T D1． 适用范围Scope1-1．本规格书适用于CD播放机用的CD机芯，（简称CD机芯）；深圳楚东电子有限公司产品型号为：CR01-AAAThis specification is only suitable for CD mechanism of CD player（thereafter called CD mechanism）;SHENZHEN CHUDONG electric co.,Ltd. Model：CR01-AAA 1-2．对本规格书有疑义时，由楚东电子有限公司工程部负责解释。
Any query over the specification shall be expressed by E&D department of SHENZHEN CHUDONG electric co.,Ltd.2．外观尺寸及安装方式Dimension of shell and mode of installation2-1． 外形尺寸及安装方式参照附件。
See attachment for drawing of dimension of shell3．一般规格General specification3-1 结构系统Mechanism system3-1-1．进碟：马达驱动载入方式Disc loading：Motorized loading3-1-2．出碟：马达驱动出碟方式Disc ejecting：Motorized ejection3-1-3．播放：进碟→播放方式Play：Loading→play method3-1-4．光头驱动方式：进给马达二级减速带动螺杆驱动方式Pick-up drive mode：feeding motor 2 steps deceleration drive screw3-1-5．抗振：三硅胶弹性体和弹簧组合抗振方式Anti vibration：3 silicon elasticity dampers method.3-2．光头Pick-up3-2-1．光头：SF-CP2（Sanyo）光头SF-CP2（Sanyo）pick-up3-2-2．激光波长：CD：790 +10nm/-15nmWave length of laser：CD：790 +10nm/-15nm3-3．马达Motor3-3-1．主轴马达：直流马达：RF-400CA-12265 ×1只（MABUCHI）Spindle motor：DC motor ：RF-400CA-12265 ×1 unit（MABUCHI）3-3-2．进给马达： FF-050SH-11190×1只（MABUCHI）Sled motor： FF-050SH-11190×1 unit（MABUCHI）3-3-3．加载马达：FF-050SH-11190×1只（MABUCHI）Loading motor：FF-050SH-11190×1 unit（MABUCHI）3-4．检测开关Detect swith3-4-1．内周检测开关：SW-110×1只（SHIN MEI）Detect switch：SW-110×1 unit（SHIN MEI）3-4-2．光碟检测光敏接收管：PT908-7C×2只Disc detecting silicon photo-transistor： PT908-7C×2 unit3-5．重量：约为500克Weight：approximate 500g4．一般性能General performance4-1．可使用光碟类型（12cm规格光碟）原则上使用按RED BOOKLET 制定的规格生产的DISC（但不可使用8CM）Type of playable disc（12cm disc only）4-2．结构：所有零件必须安装整齐、紧凑，不能有松脱。
三合一规格书
部品料号: CKS03-001部品描述: SD+MMC+MS1.SCOPE 适用范围1.1.Content 内容This specification covers performance, tests and quality requirements for SECUREDIGITAL MEMORY CARD CONNECTOR.TYPE B These connectors are providespace savings and improved functionality to system signal transfer.此规范包括性能，测试及质量要求，适用于安全数字记忆卡连接器,连接器提供完善的功能系统信号传输。
2.APPLICABLE DOCUMENTS 适用文件The following documents form a part of this specification to the extent specified herein.Unless otherwise specified, latest edition of the specification applies. In the event of conflict between requirements of this specification and product drawing, product drawing shall take precedence.下列文件是一个组成部分，具体规定如下(2.1)。
本规范和产品图纸发生冲突，以产品图纸为准。
mercial standards, specifications and report商业标准，规格及报告-STD-1344A 根据MIL - STD - 1344a 标准-STD-202F 根据MIL - STD - 202f标准3.REQUIREMENTS 要求3.1.Design and Construction 设计与装配Product shall be of design, construction and physical dimensions specified on applicableproduct drawing.产品应在设计，装配和结构尺寸指定适用产品图纸。
复述障碍的起因初探
。Hale Waihona Puke 间，曾介绍了 2 例汉语复述障碍者， 其
发病原因主要为口语表达中编码障碍，部分是听觉感 研究 知缺陷。 本文将报道另外 3 例汉语复述障碍个案， 表明其中 4 例的病因是语音加工后期的编码障碍，而 另 4 例为短时记忆缺损，以期能进一步完善汉语复述 障碍的理论模式，为康复治疗提供更丰富的客观依 据。 " 对象和方法 设计： 病例报告。 单位： 北京师范大学心理学院， 北京天坛医院。 都来自 对象： 两位汉语复述障碍个案 （ .5 和 676 ） 北京市 内， .5 和 676 的入选 时间分 别为 3889 : 89 和 388; : 8< ，他们均为男性，病前语言功能都正常，后因 脑病变导致流利型失语口语，听理解障碍不严重而复 述不成比例受损，无构音障碍，诊断为传导性失语类 型。其中， .5 是一位 <8 岁右利手大学文化的患者， =>? 显示左顶叶缺血性改变。 676 是一位 <8 岁左利手初中 文化的患者， 颞、 顶叶多发点片状长 @" 、 =>? 显示右额、 长 @$ 异常信号影， 血管显示右侧顶内动脉、 大脑中动脉 及大脑前动脉未见显影。核磁灌注显示， 右侧颞、 顶叶 呈现低灌注。 设计、 实施、 评估者： 心理学专业研究人员与神经内 科医生。 方法：患者的病情稳定后主要进行了以下 9 组测验 （ 见表 4， ， 另外， 相同材料的任务间隔时间较长。 3） 测验一 ：语音理解和再认测验：要求患者只对语音 进行内部加工， 不需要把它口语说出， 任务如下。 另外， 本 文设计的任务均比较容易完成，正常人均能达 A8B 以上 的正确率。 听觉词 C 图匹配： 主试说出 4 个词 （ 如， 狐狸 ） ， 同时呈 狐狸， 兔子 ） 。 要求患者从 3 幅图中选出主试描 现 3 幅图 （