CDBF54;中文规格书,Datasheet资料
54LS00中文资料
Original Creation Date: 04/23/98Last Update Date: 05/14/98Last Major Revision Date: 04/23/98MNDM54LS00-X REV 1A0MICROCIRCUIT DATA SHEETQUAD 2-INPUT NAND GATEGeneral DescriptionThis device contains four independent gates, each of which performs the logic NAND function.NS Part NumbersDM54LS00E/883DM54LS00J/883DM54LS00W/883Industry Part Number54LS00Prime DieL000ProcessingMIL-STD-883, Method 5004Quality Conformance InspectionMIL-STD-883, Method 5005Subgrp Description Temp ( C)o 1Static tests at +252Static tests at +1253Static tests at -554Dynamic tests at +255Dynamic tests at +1256Dynamic tests at -557Functional tests at +258A Functional tests at +1258B Functional tests at -559Switching tests at +2510Switching tests at +12511Switching tests at-55MICROCIRCUIT DATA SHEET MNDM54LS00-X REV 1A0FeaturesMICROCIRCUIT DATA SHEET MNDM54LS00-X REV 1A0(Absolute Maximum Ratings)(Note 1)Storage Temperature-65 C to +150 CAmbient Temperature under Bias-55 C to +125 CInput Voltage-0.5V to +10.0VVCC Pin Potential to Ground Pin-0.5V to +7.0VJunction Temperature under Bias-55 C to +175 CCurrent Applied to Output in LOW state (Max)twice the rated Iol (ma)Note 1:Absolute Maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is notimplied.Recommended Operating ConditionsFree Air Ambient TemperatureMilitary-55 C to +125 CSupply VoltageMilitary+4.5V to +5.5VMNDM54LS00-X REV 1A0MICROCIRCUIT DATA SHEETElectrical CharacteristicsDC PARAMETER(The following conditions apply to all the following parameters, unless otherwise specified.)DC:VCC 4.5V to 5.5V, Temp range: -55C to 125CSYMBOL PARAMETER CONDITIONS NOTES PIN-NAME MIN MAX UNITSUB-GROUPSIIH Input HighCurrent VCC=5.5V, VM=2.7V, VINH=4.5V,VINL=0.0V1, 3INPUTS20.0uA1, 2,3IBVI Input HighCurrent VCC=5.5V, VM=10.0V, VINH=4.5V,VINL=0.0V1, 3INPUTS100uA1, 2,3IIL Input LOW Current VCC=5.5V, VM=0.4V, VINH=4.5V1, 3INPUTS-0.03-0.4mA1, 2,3VOL Output LOWVoltage VCC=4.5V, VIH=2.0V, IOL=4.0mA,VINH=4.5V1, 3OUTPUTS0.4V1, 2,3VOH Output HIGHVoltage VCC=4.5V, VIL=0.7V, IOH=-0.4mA,VINH=4.5V1, 3OUTPUTS 2.5V1, 2,3IOS Short-CircuitCurrent VCC=5.5V, VINL=0.0V, VOUT=0.0V1, 3OUTPUTS-20-100mA1, 2,3VCD Input Clamp DiodeVoltage VCC=4.5V, IM=-18mA, VINH=4.5V1, 3INPUTS-1.5V1, 2,3ICCH Supply Current VCC=5.5V, VINL=0.0V1, 3VCC 1.6mA1, 2,3ICCL Supply Current VCC=5.5V, VINH=4.5V1, 3VCC 4.4mA1, 2,3AC PARAMETER - 15pF(The following conditions apply to all the following parameters, unless otherwise specified.)AC:CL=15pF, RL=2k ohms Temp range: +25CtpLH Propagation Delay VCC=5.0V5In toOn10.0ns9tpHL Propagation Delay VCC=5.0V5In toOn10.0ns9AC PARAMETER - 50pF(The following conditions apply to all the following parameters, unless otherwise specified.)AC:CL=50pF, RL=2k ohms Temp range: -55C to +125CtpLH Propagation Delay VCC=5.0V2, 4In toOn2.015.0ns92, 4In toOn2.020.0ns10, 11tpHL Propagation Delay VCC=5.0V2, 4In toOn2.017.0ns92, 4In toOn2.024.0ns10, 11Note 1:Screen tested 100% on each device at -55C, +25C & +125C temperature, subgroups A1, 2, 3, 7 & 8.Note 2:Screen tested 100% on each device at +25C temperature only, subgroup A9.MNDM54LS00-X REV 1A0MICROCIRCUIT DATA SHEET(Continued)Note 3:Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C & -55Ctemperature, subgroups A1, 2, 3, 7 & 8.Note 4:Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, subgroup A9.Subgroups 10 & 11 are guaranteed, not tested.Note 5:Guaranteed, not tested.MICROCIRCUIT DATA SHEET MNDM54LS00-X REV 1A0Revision HistoryRev ECN #Rel Date Originator Changes1A0M000120005/14/98Linda Collins Initial release: MNDM54LS00-X Rev. 1A0Added note 4 tothe AC (50pF) notes reference column.Reworded note 4from "and periodically at +125C & -55C,subgroups 10 &11" to "Subgroups 10 & 11 are guaranteed, nottested".Changed the VOL test condition from VIL=2.0Vto VIH=2.0V.。
BAT54CLT1G;BAT54CLT3G;中文规格书,Datasheet资料
BAT54CLT1G,SBAT54CLT1GDual Common Cathode Schottky Barrier DiodesThese Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.Features∙Extremely Fast Switching Speed∙Low Forward V oltage − 0.35 V (Typ) @ I F = 10 mAdc∙AEC Qualified and PPAP Capable∙S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements∙These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS(T J = 125︒C unless otherwise noted)Rating Symbol Value Unit Reverse Voltage V R30VForward Power Dissipation @ T A = 25︒CDerate above 25︒C P F2251.8mWmW/︒CThermal Resistance (Note 1) Junction-to-Ambient (Note 2)R q JA508311︒C/WForward Current (DC)I F200 Max mANon−Repetitive Peak Forward Current t p < 10 msec I FSM600mARepetitive Peak Forward Current Pulse Wave = 1 sec,Duty Cycle = 66%IFRM300mAJunction Temperature T J−55 to +125︒C Storage Temperature Range T stg−55 to +150︒C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−4 @ Minimum Pad.2.FR−4 @ 1.0 x 1.0 inch Pad.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.30 VOLTDUAL COMMON CATHODE SCHOTTKY BARRIER DIODESCATHODE12MARKING DIAGRAM†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.SOT−23CASE 318STYLE 95C= Device CodeM= Date CodeG= Pb−Free Package15C M GG*Date Code orientation and/or position mayvary depending upon manufacturing location.Device Package Shipping†ORDERING INFORMATIONBAT54CLT1G SOT−23(Pb−Free)3,000 /Tape & ReelBAT54CLT3G SOT−23(Pb−Free)10,000 /Tape & Reel (*Note: Microdot may be in either location) SBAT54CLT1G SOT−23(Pb−Free)3,000 /Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (EACH DIODE)Characteristic Symbol Min Typ Max UnitReverse Breakdown Voltage (I R = 10 m A)V(BR)R30−−VTotal Capacitance(V R = 1.0 V, f = 1.0 MHz)C T−7.610pFReverse Leakage (V R = 25 V)I R−0.5 2.0m AForward Voltage (I F = 0.1 mAdc)V F−0.220.24VForward Voltage(I F = 30 mAdc)V F−0.410.5VForward Voltage(I F = 100 mAdc)V F−0.520.8VReverse Recovery Time(IF = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)trr−− 5.0nsForward Voltage(I F = 1.0 mAdc)V F−0.290.32VForward Voltage(I F = 10 mAdc)V F−0.350.40VNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F) of 10 mA.2. Input pulse is adjusted so I R(peak) is equal to 10 mA.3. t p » t rrV Rt r10%90%IIOUTPUT PULSE(I F = I R = 10 mA; measuredat i R(REC) = 1 mA)INPUT SIGNALFigure 1. Recovery Time Equivalent Test CircuitC T , T O T A L C A P A C I T A N C E (p F )100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.001140V R , REVERSE VOLTAGE (VOLTS)124205101530Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance100100025206810I R , R E V E R S E C U R R E N T (m A )I F , F O R W A R D C U R R E N T (m A )PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APSTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q︒︒︒︒ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAT54CLT1G BAT54CLT3G。
数字多用表
®
8845A/8846A
数字多用表
用户手册
July 2006
© 2006 Fluke Corporation. All rights reserved. All product names are trademarks of their respective companies.
目 录
章节
标题
页
概述和技术指标 ................................................................................................. 1-1 概述 ...................................................................................................................1-3 用户文件 ...........................................................................................................1-3 关于本手册 .......................................................................................................1-3 安全信息 ...........................................................................................................1-4 通用安全事项 ...............................................................................................1-4 符号和标记 ...................................................................................................1-6 仪器安全程序 ...................................................................................................1-6 易失性存储器 ...............................................................................................1-6 非易失性存储器 ...........................................................................................1-7 存储介质（仅限 8846A） ...........................................................................1-7 附件 ...................................................................................................................1-7 通用技术指标 ...................................................................................................1-9 电源 ...............................................................................................................1-9 尺寸 ...............................................................................................................1-9 显示屏 ...........................................................................................................1-9 环境 ...............................................................................................................1-9 安全 ...............................................................................................................1-9 电磁兼容（EMC） ......................................................................................1-9 触发 ...............................................................................................................1-9 存储器 ...........................................................................................................1-10 计算功能 .......................................................................................................1-10 电气 ...............................................................................................................1-10 程控接口 .......................................................................................................1-10 质量保证期 ...................................................................................................1-10 电气技术指标 ...................................................................................................1-10 直流电压技术指标 .......................................................................................1-10 交流电压技术指标 .......................................................................................1-11 电阻 ...............................................................................................................1-13 直流电流 .......................................................................................................1-15 交流电流 .......................................................................................................1-16 频率 ...............................................................................................................1-18
CD54FCT240AT中文资料
1Data sheet acquired from Harris SemiconductorSCHS270AFeatures•CD54/74FCT240, CD54/74FCT240AT - Inverting •CD54/74FCT241,CD54/74FCT244,CD54/74FCT244AT -Non-Inverting •Buffered Inputs•Typical Propagation Delay:4.1ns at VCC = 5V , TA = 25o C (FCT240AT, FCT244AT)•SCR-Latchup-Resistant BiCMOS Process and Circuit Design •FCTXXX Types - Speed of Bipolar FAST ®/AS/S;FCTXXXAT Types - 30% Faster Than FAST/AS/S with Significantly Reduced Power Consumption •48mA to 64mA Output Sink Current (Commer-cial/Extended Industrial)•Output Voltage Swing Limited to 3.7V at VCC = 5V •Controlled Output-Edge Rates •Input/Output Isolation to VCC•BiCMOS Technology with Low Quiescent PowerDescriptionThe CD54/74FCT240,240AT ,241,244and 244AT three-state octal buffers/line drivers use a small-geometry BiCMOS technology.The output stage is a combination of bipolar and CMOS transistors that limits the output-HIGH level to two diode drops below VCC.This resultant lowering of output swing (0V to 3.7V)reduces power bus ringing (a source of EMI)and minimizes VCC bounce and ground bounce and their effects during simultaneous output switching.The output configuration also enhances switching speed and is capable of sinking 48mA to 64mA.The CD54/74FCT240,240A T ,244and 244AT have active-LOW output enables (1OE,2OE).The CD54/74FCT241and CD54/74FCT241AT have one active-LOW (1OE)and one active-HIGH (2OE) output enable.Functional DiagramNOTE:H = High Voltage Level, L = LOW Voltage Level X = Immaterial, Z = HIGH ImpedanceOrdering InformationPART NUMBER TEMP. RANGE (o C)PACKAGE CD54/74FCT240E -55 to 125, 0 to 7020 Ld PDIP CD54/74FCT240ATE -55 to 125, 0 to 7020 Ld PDIP CD54/74FCT241E -55 to 125, 0 to 7020 Ld PDIP CD54/74FCT244E -55 to 125, 0 to 7020 Ld PDIP CD54/74FCT244ATE -55 to 125, 0 to 7020 Ld PDIP CD54/74FCT240M -55 to 125, 0 to 7020 Ld SOIC CD54/74FCT240ATM -55 to 125, 0 to 7020 Ld SOIC CD54/74FCT241M -55 to 125, 0 to 7020 Ld SOIC CD54/74FCT244M -55 to 125, 0 to 7020 Ld SOIC CD54/74FCT244ATM -55 to 125, 0 to 7020 Ld SOIC CD54/74FCT240SM -55 to 125, 0 to 7020 Ld SSOP CD54/74FCT241SM -55 to 125, 0 to 7020 Ld SSOP CD54/74FCT244SM -55 to 125, 0 to 7020 Ld SSOPCD54FCT240H -55 to 125CD54FCT241H -55 to 125CD54FCT244H-55 to 125CD54/74FCT240, CD54/74FCT240AT TRUTH TABLE INPUT INPUT OUTPUT1OE,20EA Y L L H L H L HXZCD54/74FCT244, CD54/74FCT244AT TRUTH TABLE INPUT INPUT OUTPUT1OE,2OEA Y L L H L H L HXZCD54/74FCT241 TRUTH TABLEINPUT OUTPUT INPUT OUTPUT 1OE 1A 1Y 2OE2A 2Y L L L L X Z L H H H L L H XZH HH1816141297532468111315171191A01A11A21A32A02A12A22A31OE 2OE1Y01Y11Y21Y32Y02Y12Y22Y31Y01Y11Y21Y32Y02Y12Y22Y3241, 2442401OE 2OE240, 244241VCC = 20GND = 10February 1996CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.Copyright © Harris Corporation 1996File Number2227.3CD54/74FCT240, CD54/74FCT240AT,CD54/74FCT241, CD54/74FCT244,CD54/74FCT244ATFCT Interface LogicOctal Buffers/Line Drivers, Three-StateFAST® is a registered trademark of Fairchild Semiconductor Corporation.CD74FCT240AT and CD74FCT244AT were not acquired from Harris Semiconductor.元器件交易网Switching Specifications FCT Series tr, tf = 2.5ns, C L = 50pF, R L - See Figure 2PARAMETER SYMBOL V CC(V)+25oC0o C to+70o C-55o C to+125o C+25oC0o C to+70o C-55o C to+125o CUNITS TYP MIN MAX MIN MAX TYP MIN MAX MIN MAXPropagation DelaysData to Outputs FCT240/AT t PLH,t PHL5†5 1.58 1.59 4.4 1.5 5.6 1.5 6.7nsFCT241t PLH,t PHL54 1.5 6.5 1.57-----nsFCT244/AT t PLH,t PHL5 4.5 1.5 6.5 1.57 3.8 1.5 5.3 1.5 6.2µsOutput Enable Times FCT240/AT t PZL,t PZH57 1.510 1.510.5 4.7 1.5 6.2 1.57.7µsFCT241t PZL,t PZH5 5.5 1.58 1.58.5-----nsFCT244/AT t PZL,t PZH56 1.58 1.58.5 4.8 1.5 6.5 1.57.8nsOutput Disable Times FCT240/AT t PLZ,t PHZ56 1.59.5 1.5104 1.5 5.6 1.5 6.5µsFCT241t PLZ,t PHZ5 4.5 1.57 1.57.5-----nsFCT244/AT t PLZ,t PHZ55 1.57 1.57.5 4.5 1.5 5.8 1.5 6.8µsPower DissipationCapacitanceFCT240/AT C PD§-38 Typical38 Typical pFFCT241 C PD§-33 Typical-pFFCT244/AT C PD§35 Typical35 Typical pFMin. (Valley) V OHV During Switch-ing of Other Outputs(Output Under Test Not Switching)V OHVSeeFigure 150.5 Typical at +25o C VMax. (Peak) V OLP During Switch-ing of Other Outputs(Output Under Test Not Switching)V OLPSeeFigure 15 1 Typical at +25o C VInput Capacitance C I---10-10--10-10pF 3-State Output Capacitance C O---15-15--15-15pF†5V:min. is at 5.5V, max. is at 4.5V.5V:min. is at 5.25V for 0o C to +70o C, max. is at 4.75V for 0o C to +70o C, typ. is at 5V§C PD,measured per function,is used to determine the dynamic power consumption.P D(per package)=V CC I CC+∑(V CC2fiC PD+V O2 fo C L + V CC∆I CC D) where:V CC = supply voltage∆I CC = flow through current x unit loadC L = output load capacitanceD = duty cycle of input highfo = output frequencyfi = input frequencyCD54/74FCT540, CD54/74FCT540AT, CD54/74FCT241, CD54/74FCT244, CD54/74FCT244AT2IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
CDBF0520-HF;中文规格书,Datasheet资料
0.027(0.70)
0.020(0.50) Typ.
0.012 (0.30) Typ.
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
O
0.051(1.30) 0.043(1.10) 0.102(2.60) 0.095(2.40)
Mechanical data
0.035(0.90)
-Case: 1005 /SOD-323F standard package, molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking code: cathode band & BL -Mounting position: Any -Weight: 0.006 gram(approx.).
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 ± 0.10
0.061 ± 0.004
B
2.65 ± 0.10
0.104 ± 0.004
C
1.05 ± 0.10
0.041 ± 0.004
d
1.55 ± 0.05
SMD Schottky Barrier Diode
Reel Taping Specification
P0 P1 d Index hole E T
CD系列贴片功率电感规格书尺寸图
产品名称：CD贴片功率电感产品特点：产品图片产品图片图型及尺寸参考类 型A B C D ref CD32 3.0±0.3 3.0±0.3 2.1±0.31CD43 4.5±0.3 4.0±0.3 3.2±0.31CD52 5.8±0.3 5.2±0.3 2.1±0.3 1.6CD53 5.8±0.3 5.2±0.3 3.2±0.3 1.6CD54 5.8±0.3 5.2±0.3 4.5±0.3 1.3CD737.8±0.37.0±0.3 3.5±0.3 2.1CD757.8±0.37.0±0.3 5.0±0.3 2.1CD10410.0±0.39.0±0.3 4.0±0.3 2.9CD10510.0±0.39.0±0.35.4±0.32.9LTESTING DC RATED DC uH FREQ.RESISTANCE CURRENT (KHz).(Ω) MAX. A MAX CD32-100K 101000.230.76CD32-120K121000.270.685CD32贴片功率电感参数CD 75 － 221 K (1) (2) (3) (4)编号CD贴片功率电感图型及尺寸( SHAPE AND SIZE) ( 单位 mm )CD贴片功率电感编号表示(1). 编号(Type) : CD32/43/52/53/54/73/75/104/105 ( CD )(2). 尺寸（Size) : 成品外型尺寸（According to size) ( 75 )(3). 电感值(Inductance) : "221"表示220uH（Example: "221"for 220uH) ( 221 )(4). 电感公差（Tolerance) :"M:±20%, "K":±10% , "J":±5% ( K )/index.htm?spm=2013.1.w5002-5830017747.2.EYY36cCD贴片功率电感锰锌大功率电感 1、表面贴装小型功率电感。
CD54AC1383A中文资料
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.Copyright © Harris Corporation 19941S E M I C O N D U C T O RCD54AC138/3ACD54ACT138/3A3-to-8-Line Decoder/Demultiplexer InvertingFunctional Diagram15141312107911123564E3E2E1A2A1A0Y0Y7Y6Y5Y4Y3Y2Y1DescriptionThe CD54AC138/3A and CD54ACT138/3A are 3-to-8-line decoders/demultiplexers that utilize the Harris Advanced CMOS Logic technology.The CD54AC138/3A and CD54ACT138/3A are supplied in 16 lead dual-in-line ceramic packages (F suffix).ACT INPUT LOAD TABLE INPUT UNIT LOAD (NOTE 1)A0 - A20.83E1,E21E30.42NOTE:1.Unit load is ∆I CC limit specified in DC Electrical Specifications Table, e.g.,2.4mA Max at +25o C.June 1997File Number3887Absolute Maximum RatingsDC Supply Voltage, V CC . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6V DC Input Diode Current, I IKFor V I < -0.5V or V I > V CC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, I OKFor V O < -0.5V or V O > V CC + 0.5V . . . . . . . . . . . . . . . . . . . . .±50mA DC Output Source or Sink Current, Per Output Pin, I OFor V O > -0.5V or V O < V CC + 0.5V . . . . . . . . . . . . . . . . . . . . .±50mA DC V CC or GND Current, I CC or I GNDFor Up to 4 Outputs Per Device, Add ±25mA For EachAdditional Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±100mAPower Dissipation Per Package, P DT A = -55o C to +100o C (Package F) . . . . . . . . . . . . . . . . . .500mW T A = +100o C to +125o C (Package F) . . . . . . . .Derate Linearly at8mW/o C to 300mWOperating Temperature Range, T APackage Type F. . . . . . . . . . . . . . . . . . . . . . . . . .-55o C to +125o C Storage Temperature, T STG . . . . . . . . . . . . . . . . . .-65o C to +150o C Lead Temperature (During Soldering)At Distance 1/16in.± 1/32in. (1.59mm ± 0.79mm)From Case For 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . .+265o C Unit Inserted Into a PC Board (Min Thickness 1/16in., 1.59mm)With Solder Contacting Lead Tips Only. . . . . . . . . . . . . . .+300o CCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.Recommended Operating ConditionsSupply Voltage Range, V CCUnless Otherwise Specified, All Voltages Referenced to GND T A = Full Package Temperature RangeCD54AC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5V to 5.5V CD54ACT Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, V I , V O . . . . . . . . . . . . . . . . . .0V to V CCOperating Temperature, T A . . . . . . . . . . . . . . . . . . .-55o C to +125o C Input Rise and Fall Slew Rate, dt/dvat 1.5V to 3V (AC Types). . . . . . . . . . . . . . . . . . .0ns/V to 50ns/V at 3.6V to 5.5V (AC Types) . . . . . . . . . . . . . . . . .0ns/V to 20ns/V at 4.5V to 5.5V (AC Types) . . . . . . . . . . . . . . . . .0ns/V to 10ns/VCOMING SOON!COMPLETE DATA SHEET元器件交易网。
CD54中文资料
ＴＹＰＥ ＣＤ５４
2-2.ELECTRICAL CHARACTERISTICS
NO.
PART NO.
STAMP
01
CD54NP-1ØØMC
02
CD54NP-1ØØMB
100
03
CD54NP-12ØMC
04
CD54NP-12ØMB
120
05
CD54NP-15ØMC
06
CD54NP-15ØMB
150
07
R1.0
PART OF SILK
PLEASE COAT WITH SILK SCREEN BETWEEN THE TWO ELECTRODES.
RoHS
compliance
1
Cd:Max.0.01wt%
others:Max.0.1wt%
元器件交易网
ＳＰＥＣＩＦＩＣＡＴＩＯＮ
Ｄ.Ｃ.Ｒ. (Ω)
[MAX.] (at 20℃)
0.10
RATED CURRENT
(Ａ) ※2
1.44
0.12
1.40
0.14
1.30
0.15
1.23
0.18
1.11
0.20
0.97
0.23
0.88
0.32
0.80
0.37
0.72
0.42
0.68
0.46
0.61
0.60
0.58
0.70
0.52
0.93
23
CD54NP-82ØKC
24
CD54NP-82ØKB
25
CD54NP-1Ø1KC
26
CD54NP-1Ø1KB
27
CD54HCT244中文资料
CD74HCT244M
-55 to 125
20 Ld SOIC
CD74HCT244M96
-55 to 125
20 Ld SOIC
NOTE: When ordering, use the entire part number. The suffixes 96 and R denote tape and reel. The suffix T denotes a small-quantity reel of 250.
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK
1OE 1 1A0 2 2Y3 3 1A1 4 2Y2 5 1A2 6 2Y1 7 1A3 8 2Y0 9 GND 10
20 VCC VCC 19 2OE (241) 2OE (240, 244) 18 1Y0 1Y0 17 2A3 2A3 16 1Y1 1Y1 15 2A2 2A2 14 1Y2 1Y2 13 2A1 2A1 12 1Y3 1Y3 11 2A0 2A0
• Wide Operating Temperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL Logic ICs
CD54HC138中文资料
• Significant Power Reduction Compared to LSTTL Logic ICs
Ordering Information
PART NUMBER CD54HC138F3A CD54HC238F3A CD54HCT138F3A CD54HCT238F3A CD74HC138E CD74HC138M CD74HC138MT CD74HC138M96 CD74HC238E
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK
1
元器件交易网
CD54/74HC138, CD54/74HCT138, CD54/74HC238, CD54/74HCT238
Pinout
CD54HC138, CD54HCT138, CD54HC238, CD54HCT238 (CERDIP)
CD74HC138, CD74HCT138, CD74HCT238 (PDIP, SOIC) CD74HC238
L
L
L
L
L
L
H
L
L
L
H
L
L
H
L
H
L
L
L
L
L
H
L
L
H
L
L
H
H
L
L
L
L
L
L
L
H
L
H
L
L
CD54-74HC4543中文资料
Data sheet acquired from Harris SemiconductorSCHS281This data sheet is applicable to the CD74HCT4543. The CD54HC4543 and CD54HCT4543 were not acquired from HarrisSemiconductor. See SCHS217 for information on the CD74HCT4543.IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1999, Texas Instruments Incorporated。
CD54HC4051_04中文资料
Description
These devices are digitally controlled analog switches which utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL with the low power consumption of standard CMOS integrated circuits.
元器件交易网
Data sheet acquired from Harris Semiconductor SCHS122I November 1997 - Revised July 2004
CD54/74HC4051, CD54/74HCT4051, CD54/74HC4052, CD74HCT4052, CD54/74HC4053, CD74HCT4053
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2004, Texas Instruments Incorporated
1
元器件交易网
’HC4051, ’HCT4051, ’HC4052, CD74HCT4052, ’HC4053, CD74HCT4053
Pinouts
CD54HC4051, CD54HCT4051 (CERDIP)
CD74HC4051 (PDIP, SOIC, SOP, TSSOP)
-55 to 125 16 Ld CERDIP
BAT54;BAT54_D87Z;BAT54A;BAT54C;BAT54S;中文规格书,Datasheet资料
intended to be an exhaustive list of all such trademarks.
2Cool¥ AccuPower¥ AX-CAP¥* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥
®*
The Power Franchise®
TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™
FPS¥ ®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
IC datasheet pdf-CD54AC245,CD74AC245,CD54ACT245,CD74ACT245,pdf(Octal-Bus Transceiver,Three-State, No
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
FAST™ is a Trademark of Fairchild Semiconductor.
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±50mA DC Output Source or Sink Current per Output Pin, IO
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC (Note 4)
AC Types. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5V to 5.5V ACT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Slew Rate, dt/dv AC Types, 1.5V to 3V . . . . . . . . . . . . . . . . . . . . . . . . . 50ns (Max) AC Types, 3.6V to 5.5V . . . . . . . . . . . . . . . . . . . . . . . . 20ns (Max) ACT Types, 4.5V to 5.5V. . . . . . . . . . . . . . . . . . . . . . . 10ns (Max)
ZXTN07045EFFTA;中文规格书,Datasheet资料
A Product Line ofDiodes Incorporated45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23FFeatures and Benefits• BV CEO > 45V•I C = 4A Continuous Collector Current•Low Saturation Voltage V CE(sat) < 80mV @ 1A•R CE(sat) = 50mΩ•h FE characterised up to 4A• Highh FE min 400 @ 1A• 1.5Wpowerdissipation•Complementary part number ZXTP07040DFF•Totally Lead-Free & Fully RoHS compliant (Note 1) •Halogen and Antimony Free. “Green” Device (Note 2) •Qualified to AEC-Q101 Standards for High ReliabilityDescriptionThis low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. Mechanical Data• Case:SOT23F•Case material: Molded Plastic. “Green” Molding Compound (Note 2) UL Flammability Classification Rating 94V-0 •Moisture Sensitivity: Level 1 per J-STD-020 •Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208•Weight: 0.008 grams (Approximate)Applications• Boostconverters•MOSFET and IGBT gate drivers•Lamp and relay driver• Motordrive• SirendriverOrdering Information (Note 3)Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN07045EFFTA 1D4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and<1000ppm antimony compounds.3. For packaging details, go to our website at .Marking Information1D4 = Product Type Marking CodeSOT23FDevice symbolTop ViewPin ConfigurationTop ViewB CEB1D4Maximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitCollector-Base Voltage V CBO 45 V Collector-Emitter Voltage V CEO 45 V Emitter-Collector Voltage (Reverse Blocking) V ECO 6 V Emitter-Base Voltage V EBO 7 V Continuous Collector Current (Note 6) I C 4 A Peak Pulse Current I CM 6 A Base Current I B 1 AThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitPower DissipationLinear Derating Factor (Note 4)P D - 0.846.72 W mW/°C (Note 5) 1.3410.72 (Note 6) 1.50 12.0(Note 7) 2.016.0 Thermal Resistance, Junction to Ambient (Note 4) R θJA149 °C/W (Note 5)93(Note 6)83 (Note 7)60Thermal Resistance, Junction to Lead (Note 8) R θJL 43.77 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °C Notes:4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition. 5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition.7. As note 6 above, measured at t < 5 seconds 8. Thermal resistance from junction to solder-point (at the end of the collector lead).Typical Thermal CharacteristicsDerating CurveTemperature (°C)Transient Thermal Impedance T h Pulse Width (s)Pulse Power DissipationPulse Width (s)Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICSCollector-Base Breakdown Voltage BV CBO45 160 - V I C = 100µA Collector-Emitter Breakdown Voltage (base open) (Note 9)BV CEO 45 60 - V I C = 10mAEmitter-Base Breakdown Voltage BV EBO7 8.3 - V I E = 100µA Emitter-collector breakdown voltage(reverse blocking) BV ECX6 8.2 - V I E = 100µA; R BC < 1k Ω or -0.25V < V BC < 0.25V Emitter-collector breakdown voltage(base open)BV ECO 6 7.2 - V I E = 100µA Collector-base Cut-off Current I CBO- <1 - 50 20 nAµA V CB = 35V V CB = 35V, T A = 100°CEmitter-base Cut-off Current I EBO- <1 50 nA V EB = 5.6V ON CHARACTERISTICS (Note 9)Static Forward Current Transfer Ratio h FE500400250 70 800 710 530 125 1500 - - - - I C = 100mA, V CE = 2V I C = 1A, V CE = 2V I C = 2A, V CE = 2V I C = 4A, V CE = 2VCollector-Emitter Saturation Voltage V CE(sat) - 4516060 200 230 70 230 80 270 280 mV I C = 0.1A, I B = 0.5mA I C = 1A, I B = 5mA I C = 1A, I B = 100mAI C = 2A, I B = 20mA I C = 4A, I B = 80mABase-Emitter Saturation Voltage V BE(sat)- 1000 1100 mV I C = 4A, I B = 80mA Base-Emitter On Voltage V BE(on)- 875 1000 mV I C = 4A, V CE = 2V SMALL SIGNAL CHARACTERISTICS (Note 9)Transition Frequency f T150 190 - MHz I C = 50mA, V CE = 5V,f = 50MHzInput Capacitance C ibo - 225 - pF V EB = 0.5V, f = 1MHz Output Capacitance C obo - 18.4 25 pF V CB = 10V, f = 1MHz Delay time t d- 22.3 - ns V CC = 10V,I C = 500mA,I B1 = I B2 = 50mARise time t r- 10.6 - ns Storage time t s- 613 - ns Fall time t f- 146 - ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%Typical Electrical CharacteristicsV CE(SAT) v I CV (V )I C Collector Current (A)V BE(SAT) v I CI C Collector Current (A)I C Collector Current (A)V CE(SAT) v I CV (V )I C Collector Current (A)V BE(ON) v I CI C Collector Current (A)T y p i c a l G a i n (h F E )A Product Line of Diodes IncorporatedPackage Outline Dimensionsb 3Dim. Millimeters InchesDim. MillimetersInchesMin. Max. Min. Max.Min. Max. Min. Max. A-1.12-0.044e11.90 NOM0.075 NOMA1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L0.25 0.60 0.0098 0.0236D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 e 0.95 NOM 0.037 NOM - - - - -Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inchesSuggested Pad LayoutA Product Line ofDiodes IncorporatedIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESZXTN07045EFFTA。
BAT54C-V-GS08;中文规格书,Datasheet资料
BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors1For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Small Signal Schottky Diodes, Single and DualFeatures•These diodes feature very low turn-on voltage and fast switching •These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges•AEC-Q101 qualified•Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECMechanical DataCase: SOT-23Weight: approx. 8.1 mg Packaging codes/options:18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedNote 1)Device on fiberglass substrate, see layout on next page.Thermal CharacteristicsT amb = 25°C, unless otherwise specifiedNote1) Device on fiberglass substrate, see layout on next page.** Please see document “V ishay Material Category Policy”: /doc?99902PartOrdering codeT ype markingRemarks BAT54-V -G BA T54-V -G-18 or BAT54-V -G-08L8Tape and reel BAT54A-V -G BAT54A-V -G-18 or BAT54A-V -G-08L46Tape and reel BAT54C-V -G BAT54C-V -G-18 or BAT54C-V -G-08L47Tape and reel BAT54S-V -GBAT54S-V -G-18 or BAT54S-V -G-08L48Tape and reelParameterT est conditionSymbol V alue Unit Repetitive peak reverse voltage V RRM 30V Forward continuous current I F 200 1)mA Repetitive peak forward current I FRM 300 1)mA Surge forward current current t p < 1 s I FSM 600 1)mA Power dissipationP tot230mWParameterTest conditionSymbol V alue Unit Thermal resistance junction to ambient air R thJA 430 1)K/W Junction temperature T j 125°C Storage temperature rangeT stg- 65 to + 150°C 2Document Number 83344Rev. 1.0, 28-Jun-10BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GVishay Semiconductors For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedLayout for R thJA testThickness:Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)Typical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest condition Symbol Min.Typ.Max.Unit Reverse Breakdown voltage I R = 100 µA (pulsed)V (BR)30V Leakage currentPulse test t p < 300 µs, δ < 2 % atV R = 25 V I R 2µA Forward voltageI F = 0.1 mA, t p < 300 µs, δ < 2 %V F 240m V I F = 1 mA, t p < 300 µs, δ < 2 %V F 320m V I F = 10 mA, t p < 300 µs, δ < 2 %V F 400m V I F = 30 mA, t p < 300 µs, δ < 2 %V F 500m V I F = 100 mA, t p < 300 µs, δ < 2 %V F 800m V Diode capacitance V R = 1 V , f = 1 MHz C D 10pF Reverse recovery timeI F = 10 mA to I R = 10 mA,i R = 1 mA, R L = 100 Ωt rr5nsFigure 1. Typical Forward V oltage Forward Current vs.V arious TemperaturesFigure 2. Diode Capacitance vs. Reverse V oltage V RBAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors3For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Package Dimensions in millimeters (inches): SOT-23Figure 3. Typical V ariation of Reverse Currentvs. V arious TemperaturesLegal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTOR BAT54C-V-GS08。
CD54HC00H中文资料
CD74HCT00M96
-55 to 125
14 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and reel. The suffix T denotes a small-quantity reel of 250.
• Wide Operating Temperature Range . . . -55oC to 125oC
The CD54HC00, CD74HC00, CD54HCT00, and CD74HCT00 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The 74HCT logic family is functionally pin compatible with the standard 74LS logic family.
• HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V
• HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
BCP54中文资料
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCP54 BCP55 BCP56 VCEO collector-emitter voltage BCP54 BCP55 BCP56 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − − −65 − −65 45 60 80 5 1 1.5 0.2 1.33 +150 150 +150 V V V V A A A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − 45 60 100 V V V MIN. MAX. UNIT
CD54HCT00F3A资料
CD74HCT00M96
-55 to 125
14 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and reel. The suffix T denotes a small-quantity reel of 250.
2
1.5 -
-
4.5 3.15 -
-
6
4.2 -
-
2
-
- 0.5
4.5
-
- 1.35
6
-
- 1.8
2
1.9 -
-
4.5 4.4 -
元器件交易网
Data sheet acquired from Harris Semiconductor SCHS116C January 1998 - Revised September 2003
CD54HC00, CD74HC00, CD54HCT00, CD74HCT00
High-Speed CMOS Logic Quad 2-Input NAND Gate
[ /Title (CD54 HC00, CD54 HCT00 , CD74 HC00, CD74 HCT00 ) /Sub-
Features
Description
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Parameter
Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current,surge peak Power dissipation Storage temperature Junction temperature
100u
125 C
O
100
10u
75 C
O
10
1u
1
C
75 C
C
O
125
O
-25
O
C100n25 C -5 COOO
0.1 0 0.2 0.4 0.6 0.8
25
10n 0 5 10 15 20 25 30
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between terminals characteristics
Conditions
Symbol Min Typ Max Unit
VF 0.24 0.32 0.4 0.5 1 2 10 5 V
Reverse current Capacitance between terminals Reverse recovery time
IR CT T rr
uA pF nS
REV:B
f = 1 MHz, and 1 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm
QW-A1046
Page 1
/
SMD Schottky Barrier Diode
SMD Diodes Specialist
0.040(1.00) Typ. 0.012 (0.30) Typ. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70)
Dimensions in inches and (millimeter)
Maximum Rating (at T A =25 C unless otherwise noted)
Conditions
Symbol Min Typ Max Unit
V RM VR V R(RMS) IO I FRM 30 30 21 200 0.3 0.6 200 -65 +125 +125 V V V mA A A mW
O
8.3 ms single half sine-wave superimposed on rate load(JEDEC method)
SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF54 (RoHs Device)
Io = 200 mA V R = 30 Volts Features
Low forward Voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
I FSM PD T STG Tj
C C
O
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Forward voltage I F = 0.1mA I F = 1mA I F = 10mA I F = 30mA I F = 100mA V R = 25V
0.051(1.30) 0.043(1.10)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical data
Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.006 gram(approx.).
RATING AND CHARACTERISTIC CURVES (CDBF54)
Fig. 1 - Forward characteristics
1000 1m
Fig. 2 - Reverse characteristics
Reverse current ( A )
Forward current (mA )
Capacitance between terminals ( P F)
14 12 10 8 6 4 2 0 0 5 10 15 20 25 30
120
Fig.4 - Current derating curve
Average forward current(%)
f=1MHz O T A =25 C
Mounting on glass epoxy PCBs
100
80
60
40
20
0
0 25 50 75 100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
REV:B
QW-A1046
Page 2
/
分销商库存信息:
COMCHIP CDBF54