SF5402中文资料
SF5405资料
I FAV– Average Forward Current ( A )
SF5405...SF5408
Tj = 175°C
VR = VR RM f 1kHz RthJA 25K/W l=10mm
v v
Tj = 25°C
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF – Forward Voltage ( V )
96 12062
Figure 7. Max. Forward Current vs. Forward Voltage
1000 SF5405...SF5408 I R – Reverse Current ( mA ) SF5400...SF5408 VR = VRRM
I FAV– Average Forward Current ( A )
元器件交易网
SF5400...SF5408
Vishay Telefunken
Super Fast Soft Recovery Rectifier
Features
D D D D
Glass passivated Hermetically sealed axial leaded glass envelope Low reverse current High reverse voltage
Reverse recovery y time
IF=0.5A, IR=1A, iR=0.25A
SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 SF5400–SF5404 SF5405–SF5408
60 110 220 330 440 550 660 880 1100 50 75
PG5402中文资料
PG5400 THRU PG5408GLASS PASSIVA TED JUNCTION PLASTIC RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 AmperesFEATURESl Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compoundl Glass passivated junction in DO-201AD packagel 3.0 ampere operation at T A =55¢J with no thermal runaway l Exceeds environmental standards of MIL-S-19500/228l Low reverse leakage current MECHANICAL DA TA Case: Molded plasticTerminals: Axial leads, solderable per MIL-STD-202, Method 208Mounting Position: Any Weight: 0.04 ounce, 1.1 gramMAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25¢J ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.PG5400PG5401PG5402PG5404PG5406PG5407PG5408UNITSMaximum Recurrent Peak Reverse Voltage501002004006008001000V Maximum RMS Voltage3570140280420560700V Maximum DC Blocking Voltage501002004006008001000V Maximum Average Forward Rectified Current .375"(9.5mm) lead length at T A =55¢J3.0APeak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load(JEDEC method)150A Maximum Forward Voltage at 3.0A1.2V Maximum Reverse Current at T a =25¢J At Rated DC Blocking Voltage T a =100¢J5.0100£g A £g A Typical Junction capacitance (Note 1)30P F Typical Thermal Resistance R £K JA(Note 2)20¢J /W Typical Reverse Recovery Time(Note 3)2£g S Operating and Storage T emperature Range T A-55 to +150¢JNOTES:1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC2. Thermal resistance from junction to ambient and from junction to lead at 0.375”(9.5mm) lead length P.C.B mounted3. Reverse Recovery T est Conditions: I F =.5A, I R =1A, Irr=2.5ADO-201ADRATING AND CHARACTERISTIC CURVES PG5400 THRU PG5408PERCENT OF RATED PEAK REVERSE VOLTAGEAMBIENT TEMPERATURE, ¢JFig. 1-TYPICAL REVERSE CHARACTERISTICS Fig. 2-FORWARD DERATING CURVEAMBIENT TEMPERATURE, ¢JMAXIMUM FORWARD VOLTAGE-VFM(VpK)Fig. 3-FORWARD CURRENT DERATING CURVE Fig. 4-TYPICAL JUNCTION CAPACITANCENO. OF CYCLES AT 60HzFig. 5-MAXIMUM OVERLOAD SURGE CURRENT。
斯可络空气压缩机性能参数及价格
斯可络空气压缩机是否过剩，或者说过剩多少恐怕都要重新衡量。
主持人：刚刚提到内蒙古新丰电的违规案例，那么为什么在电力过剩的强预期下，在全国进行宏观调控抑制整体经济过热、固定资产投资过热的情况下，电力投资热情仍然不减？林伯强：电力过剩主要有两方面原因。
一方面，因为电力行业基本上是国营企业，国营企业的经营特点是以大为先；对地方政府来说，电力属于资本密集型产业，对GDP、地方税收都有很大的【斯可络空气压缩机】产品简介：直联便携式往复式活塞式空压机，借鉴国内外同类产品的优质机型结构，采用计算机三维造型进行优化设计，结构更合理，性能更优越。
电机配备热保护器，确保空压机电机不会因过载而烧坏。
主要零部件严格按国家标准采用数控机床进行加工。
产品机械性能稳定，内在质量可靠，外形美观，体积小，重量轻，操作简单，携带方便，风力强劲.广泛应用于喷漆、装潢、气动丁具、矿山机械等需要压缩空气的场所。
【斯可络空气压缩机】工作原理：往复活塞式压缩机的丁作原理是利用驱动机带动曲轴作旋转运动，曲轴通过连杆带动活塞作往复运动，活塞的往复运动使气缸的容积发生周期性变化：气缸顶部的进排气阀周期性的开闭，吸气阀吸入的空气通过活塞压缩达到排气压力时经排气阀、排气管、单向阀进入储气罐供用用户使用。
【斯可络空气压缩机】适用范围：带气钉枪、风批、小面积喷漆、带点胶机等小型仪器、吹尘、小型车充气，家装，修理铺、带泡沫机等等，小型的气动工具和仪器基本都可以，不懂的话还可以质询客服。
电机100%全铜芯线圈【斯可络空气压缩机】技术参数：型号匹数功率电源排气量储气罐容积及尺寸排气压力GKJ-3p30l 3.0p 2.2kw 220v/50hz 0.12m3/min 30l（54cm*25cm） 0.8mpaGKJ-4p35l 4.0p 2.2kw 220v/50hz 0.12m3/min 35l（60cm*26cm） 0.8mpaGKJ-5p40l 5.0p 2.2kw 220v/50hz 0.13m3/min 40l（63cm*27cm） 0.8mpa【斯可络空气压缩机】安放位置：l 空压机应安置在通风良好，湿度小、少粉尘、无污物、光线充足、容易检查、加油的地方．2 安放时必须使空压机脚轮在同一水平面，否则会引起振动，甚至发生安全事故。
制冷压缩机说明书F系列
氟利昂压缩机及压缩冷凝机组说明书安徽科海压缩机制造有限公司中国·安徽·蚌埠目录一、结构、特点、性能和用途 (3)1、特点和用途 (3)2、压缩机结构简介 (3)3、主要技术参数 (4)二、制冷系统概述 (6)1、制冷系统的工作过程 (5)2、制冷剂 (7)3、润滑油 (7)三、安装、使用 (7)1、机组的安装 (7)2、吸、排气截止阀的使用 (8)3、润滑油油压的调节 (8)4、机组的操作 (9)5、添加润滑油 (9)6、放空气 (10)7、吸潮 (10)8、注意事项 (11)9、常见故障分析与补救方法 (11)一、结构、特点、性能和用途1、特点和用途F系列氟利昂压缩机及压缩机组、压缩冷凝组、专供氟利昂制冷剂使用，可作各种小型制冷设备的主机配套。
在国民经济的工业、农业、交通运输、医疗卫生、科学研究等各个部门有极其广泛的作用。
如：化学工业的炼气、炼油、造纸、人造纤维、制药等生产过程的冷却：食品工业中鱼、肉、乳脂、干酪等的冷却冷藏：以及船舶、火车的冷藏运输。
在空调方面如：中心实验室、计量室、机密仪器车间的恒温恒湿，和医院、剧场、餐厅、工厂车间的空气调节。
压缩机和电动机：分油器、控制仪表等均装于同一底座上，组成压缩机组，倘装于冷凝器上，则组成压缩冷凝机组，冷凝器系卧形壳管式，传热性能良好，耗水量小。
压缩机结构紧凑、运转平稳、具有良好的润滑系统，并带有氨气保护装置。
对单级氟利昂R-12压缩机所采用的蒸发温度是-20℃至+10℃，冷凝温度不高于+50℃，R-22时蒸发温度-40~+5℃，冷凝温度不高于+40℃活塞上的压力差均不超过1Mpa。
2、压缩机结构简介F系列氟利昂压缩机有4F70、4F80、2F10、4F10。
它们都是单级、单作用、逆流式压缩机。
二缸成直立式，四缸成V型。
曲轴箱和气缸体用高级铸铁铸成，曲轴采用球墨铸铁制成，两拐互成180°。
连杆材料为可锻铸铁，断面呈工字型。
1N5402中文资料
1N5400 THRU 1N5408GENERAL PURPOSE PLASTIC RECTIFIERReverse Voltage -50 to 1000 Volts Forward Current -3.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ High surge current capability♦ Construction utilizes void-free molded plastic technique ♦ 3.0 Ampere operation atT L =105°C with no thermal runaway ♦ Typical I R less than 0.1µA♦ High temperature soldering guaranteed:250°C/10 seconds, 0.375" (9.5mm) lead length,5 lbs.(2.3kg) tensionMECHANICAL DATACase:JEDEC DO-201AD molded plastic bodyTerminals:Plated axial leads, solderable per MIL-STD-750,Method 2026Polarity:Color band denotes cathode end Mounting Position:AnyWeight:0.04 ounce, 1.1 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.1N 1N 1N 1N 1N 1N 1N 1N 1N SYMBOLS540054015402540354045405540654075408UNITS*Maximum repetitive peak reverse voltage V RRM 501002003004005006008001000Volts *Maximum RMS voltageV RMS 3570140210280350420560700Volts*Maximum DC blocking voltage to T A =150°C V DC 501002003004005006008001000Volts*Maximum average forward rectified current 0.5” (12.5mm) lead length at T L =105°C I (AV) 3.0Amps *Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method) at T L =105°C I FSM 200.0Amps *Maximum instantaneous forward voltage at 3.0A V F 1.2Volts *Maximum DC reverse current T A =25°C 10.0at rated DC blocking voltageT A =150°CI R 500.0µA *Maximum full load reverse current full cycle average, 0.5" (12.5mm) lead length at T L =105°C I R(AV)500.0µA Typical junction capacitance (NOTE 1)C J 30.0pF *Typical thermal resistance (NOTE 2)R ΘJA 20.0°C/W Maximum DC blocking voltage temperature T A +150°C *Operating junction temperature range T J -50 to +170°C *Storage temperature rangeT STG-50 to +170°CNOTES:(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts(2) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted with 0.8 x 0.8” (20 x 20mm) copper heatsinks *JEDEC registered value4/98Dimensions in inches and (millimeters)。
5402部分翻译
注意: 这张数据清单是为用来和 TMS320C5000 DSP 家族功能上协调而设计的.(文献号 SPRU307) 请注意关于通用性, 标准授权和在德州半导体产品应用中的重要注意事项, 以及这张数据清单底 部的免责声TMS320VC5402 定点数字信号处理器 (若没有特别说明以后用 5402 表示) 是以改进的哈佛 结构为基础的, 拥有 1 条程序内存总线和 3 条数据内存总线. 这个处理器提供一个高度并行的算 术逻辑单元 (ALU), 特殊应用的硬件逻辑单元, 片上内存和额外的片上外设, 这些处理机还提供高 度专用化的指令集, 这些指令集是 DSPs 操作灵活性和速度的基础. 独立的程序和数据空间允许同时访问程序指令和数据, 为高度并行提供可能. 两次读操作和一 次写操作可在一个机器周期内完成. 具有并行存储和特殊应用的指令可以有效地应用在这种结构 中. 再者, 数据可以在数据和程序空间间传输. 此类并行功能支持一系列强大的算数, 逻辑和位操 作运算, 并能在一个机器周期内完成., 还有,5402 包括控制器件, 可以处理终端, 重复操作和函数 调用.
Figure 1: TMS320VC5402 封装 (俯视图) N C 表示无内部连接 当 CVDD 为 CPU 内核供电时,DVDD 同时为 I/O 管脚供电.VSS 是 I/O 管脚和 CPU 内核的 共地点 TMS320VC5402PGE(144 引脚 LQFP) 封装与'LC548,'LC/VC549 以及'VC5410 是引脚兼容 的
13
5.3
内存映射
Figure 6: 内存映射 5.3.1 可再定位的中断向量表
5402 以一个 4K-字 ×16 位的片上可屏蔽的 ROM 为特征. 用户可以根据任何特殊应用的内容 安排 5402 的 ROM 的可编程空间. 一项安全选项可获得去保护通用的 ROM. 在 TMS320C54X DSP CPU 和外设参考集有这项安全选项的描述. 注意只有 ROM 安全选项, 不是 ROM/RAM 选 项, 在 5402 上可获得的. 一个自举加载器在标准 5402 的片上 ROM 是可获得的. 自举加载器 是在加电下用来自动将用户的代码从一个外部源到程序内存的任何位置. 如果在硬件复位期间 MP/!MC 引脚为低电平, 程序在片上 ROM 的 FF80h 位置执行. 这个位置包含了一串指令来引 导自举加载器程序开始运行. 标准的 5402 自举加载器提供了不同的下载代码的方式来适应不同 的系统要求. • • • • • 并行的 8 位或 16 位宽的 EPROM 并行的 8 位或 16 位模式的 I/O 空间 从 8 位或 16 位串口的串行加载模式 从 8 位或 16 位串口的串行加载模式 主机接口加载
MAX5402EUA中文资料
General Description The MAX5402 µPoT™digital potentiometer is a 256-tap variable resistor with 10kΩtotal resistance in a tiny 8-pin µMAX package. This device functions as a mechan-ical potentiometer, consisting of a fixed resistor string with a digitally controlled wiper contact. It operates from +2.7V to +5.5V single-supply voltages and uses an ultra-low 0.1µA supply current. This device also pro-vides glitchless switching between resistor taps, as well as a convenient power-on reset (POR) that sets the wiper to the midscale position at power-up. A low 5ppm/°C ratiometric temperature coefficient makes it ideal for applications requiring low drift.The MAX5402 serves well in applications requiring digi-tally controlled resistors, including adjustable voltage references and programmable gain amplifiers (PGAs).A nominal end-to-end resistor temperature coefficient of 35ppm/°C makes this part suitable for use as a variable resistor in applications such as low-tempco adjustable gain and other circuit configurations. This device is guaranteed over the extended industrial temperature range (-40°C to +85°C).________________________Applications Mechanical Potentiometer ReplacementLow-Drift PGAsAdjustable Voltage ReferencesFeatures o Small Footprint, 8-Pin µMAX Packageo Ultra-Low 100nA Supply Currento+2.7V to +5.5V Single-Supply Operationo256 Tap Positionso Low Ratiometric Temperature Coefficient5ppm/°Co Low End-to-End Resistor Temperature Coefficient35ppm/°Co Power-On Reset: Wiper Goes to Midscale(Position 128)o Glitchless Switching Between the Resistor Tapso3-Wire SPI™-Interface Compatibleo10kΩResistor ValueMAX5402 256-Tap, µPoT, Low-Drift, Digital PotentiometerPin Configuration19-1896; Rev 0; 1/01Ordering InformationµPoT is a trademark of Maxim Integrated Products.SPI is a trademark of Motorola, Inc.Maxim Integrated Products1 For price, delivery, and to place orders,please contact Maxim Distribution at 1-888-629-4642, or visit Maxim’s website at .Functional DiagramM A X 5402256-Tap, µPoT, Low-Drift,Digital PotentiometerABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS(V DD = +5V, V H = V DD , V L = 0, T A = T MIN to T MAX . Typical values are at V DD = +5V, T A = +25°C, unless otherwise noted.)Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.V DD to GND..............................................................-0.3V to +6V DIN, SCLK, CS to GND ............................................-0.3V to +6V H, L, W to GND.............................................-0.3V to (V DD + 0.3)Maximum Continuous Current into Pins H, L, and W ...........1mA Continuous Power Dissipation (T A = +70°C)8-Pin µMAX (derate 4.1mW/°C above +70°C)............330mWOperating Temperature Range ...........................-40°C to +85°C Junction Temperature......................................................+150°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10s).................................+300°CMAX5402256-Tap, µPoT, Low-Drift,Digital Potentiometer________________________________________________________________________________________3Note 2:The DNL and INL are measured with the potentiometer configured as a voltage-divider with H = V DD and L = 0. The wiperterminal is unloaded and measured with an ideal voltmeter.Note 3:The DNL and INL are measured with the potentiometer configured as a variable resistor. H is unconnected and L = 0. Thewiper terminal is driven with a source current of 200µA at V DD = +3V and 400µA at V DD = +5V.Note 4:The wiper resistance is the worst value measured, injecting a current, I W = V DD /R HL into terminal W.Note 5:Digital timing is guaranteed by design.ELECTRICAL CHARACTERISTICS (continued)(V DD = +5V, V H = V DD , V L = 0, T A = T MIN to T MAX . Typical values are at V DD = +5V, T A = +25°C, unless otherwise noted.)M A X 5402256-Tap, µPoT, Low-Drift,Digital Potentiometer 4_______________________________________________________________________________________Typical Operating Characteristics(T A = +25°C, unless otherwise noted.)100125150175200225250275300012345WIPER RESISTANCE vs. WIPER VOLTAGEWIPER VOLTAGE (V)W I P E R R E S I S T A N C E (Ω)-0.20-0.10-0.150.00-0.050.050.10-40-30-20-100102030405060708090END-TO-END RESISTANCE % CHANGEvs. TEMPERATUREM A X 5402 T o c 02TEMPERATURE (°C)E N D -T O -E N D R E S I S T A N C E % C H A N G E0214365798100649632128160192224256RESISTANCE vs. INPUT CODEM A X 5402 T o c 03INPUT CODE (DECIMAL)W -T O -L R E S I S T A N C E (k Ω)-0.20-0.10-0.150.050.00-0.050.200.150.100.25961283264160192224256VARIABLE RESISTOR DNLvs. INPUT CODEM A X 5402 T o c 04INPUT CODE (DECIMAL)R D N L (L S B )-0.4-0.3-0.1-0.20.10.20.00.30649632128160192224256VARIABLE RESISTOR INLvs. INPUT CODEM A X 5402 T o c 05INPUT CODE (DECIMAL)R I N L (L S B )-0.08-0.04-0.060.00-0.020.020.040.060.08649632128160192224256VOLTAGE-DIVIDER DNL vs. INPUT CODEM A X 5402 T o c 06INPUT CODE (DECIMAL)D N L (L S B )Typical Operating Characteristics (continued)(T A = +25°C, unless otherwise noted.)MAX5402256-Tap, µPoT, Low-Drift,Digital Potentiometer________________________________________________________________________________________5-0.20-0.10-0.150.00-0.050.050.100.150.20649632128160192224256VOLTAGE-DIVIDER INL vs. INPUT CODEM A X 5402 T o c 07INPUT CODE (DECIMAL)I N L (L S B )0.00.40.20.80.61.01.2-40-30-20-1001020304050607080SUPPLY CURRENT vs. TEMPERATURETEMPERATURE (°C)S U P P L Y C U R R E N T (µA )200ns/div (CODE 127 TO 128)TAP-TO-TAP SWITCHING TRANSIENT V W-L+2.49V+2.51V+5VMAX5402 toc09CS1001234510.10.010.0010.0001INPUT LOGIC VOLTAGEDIGITAL INPUT VOLTAGE (V)S U P P L Y C U R R E N T (m A )M A X 5402256-Tap, µPoT, Low-Drift,Digital Potentiometer 6_______________________________________________________________________________________Detailed DescriptionThe MAX5402 consists of 255 fixed resistors in series between pins H and L. The potentiometer wiper (pin W)can be programmed to access any one of the 256 dif-ferent tap points on the resistor string. The MAX5402has an SPI-compatible 3-wire serial data interface to control the wiper tap position. This write-only interface contains three inputs: Chip Select (CS ), Data In (DIN),and Data Clock (SCLK ). When CS is taken low, data from the DIN pin is synchronously loaded into the 8-bit serial shift register on the rising edge of each SCLK pulse (Figure 1). The MSB is shifted in first, as shown in Figure 3. Note that if CS is not kept low during the entire data stream, the data will be corrupted and the devicewill need to be reloaded. After all 8 data bits have been loaded into the shift register, they are latched into the decoder once CS is taken high. The decoder switches the potentiometer wiper to the tap position that corre-sponds to the 8-bit input data. Each resistor cell is 10k Ω/255 or 39.2Ωfor the MAX5402.The MAX5402 features POR circuitry. This sets the wiper to the midscale position at power-up by loading a binary value of 128 into the 8-bit latch. The MAX5402can be used as a variable resistor by connecting pin W to either pin H or L.Figure 1. Serial Interface Timing DiagramFigure 2. Detailed Serial Interface Timing DiagramMAX5402256-Tap, µPoT, Low-Drift,Digital Potentiometer________________________________________________________________________________________7Applications InformationThe MAX5402 is intended for a variety of circuits where accurate, fine-tuned adjustable resistance is required,such as in adjustable voltage or adjustable gain circuit configurations. The MAX5402 is used in either a poten-tiometer divider or a variable resistor configuration.Adjustable Current to Voltage ConverterFigure 4 shows the MAX5402 used with a MAX4250low-noise op amp to precisely tune a current-to-voltage converter. Pins H and W of the MAX5402 are connect-ed to the node between R3 and R2, and pin L is con-nected to ground.Adjustable Gain AmplifierThe MAX5402 is used again with the MAX4250 to make a digitally adjustable gain circuit as shown in Figure 5.The normal feedback resistor is replaced with the MAX5402 in a variable resistor configuration, so that the gain of the circuit can be digitally controlled.Adjustable Voltage ReferenceIn Figure 6, the MAX5402 is shown with the MAX6160to make an adjustable voltage reference. In this circuit,the H pin of the MAX5402 is connected to the OUT pin of the MAX6160, the L pin of the MAX5402 is connect-ed to GND, and the W pin of the MAX5402 is connect-ed to the ADJ pin of the MAX6160. The MAX5402allows precise tuning of the voltage reference output. A low 5ppm/°C ratiometric tempco allows a very stable adjustable voltage overtemperature.Figure 4. I to V ConverterFigure 5. Noninverting AmplifierFigure 3. Serial Data FormatM A X 5402256-Tap, µPoT, Low-Drift,Digital Potentiometer 8_______________________________________________________________________________________Chip InformationTRANSISTOR COUNT: 3475 PROCESS: BiCMOSFigure 6. Adjustable Voltage Reference256-Tap, µPoT, Low-Drift,Digital PotentiometerMAX5402Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embod ied in a Maxim prod uct. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 _____________________9©2001 Maxim Integrated Products Printed USAis a registered trademark of Maxim Integrated Products.。
艾默生 Flexim FLUXUS F532WD超声波流量测量仪 数据表
技术规格TSFLUXUS_F532WDV6-0ZH_Leu2024-04-01 Flexim FLUXUS F532WD超声波流量测量仪FLUXUS F532WD 技术规格2024-04-01, TSFLUXUS_F532WDV6-0ZH_Leu2功能. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3测量原理. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3计算体积流量. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3计算声速和流体温度. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4声程数. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4测量变送器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5技术参数. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5尺寸. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .72"管道安装组件 (可选). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7存储. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7端子分配. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8传感器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9传感器选项. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9技术参数. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9传感器固定件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11传感器的耦合材料. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11连接系统. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12接线盒. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13技术参数. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13尺寸. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132"管道安装组件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14技术规格 FLUXUS F532WD3TSFLUXUS_F532WDV6-0ZH_Leu, 2024-04-01功能测量原理超声波传感器安装在管道上，该管道完全充满流体。
Vishay Siliconix Si5402BDC晶体管说明书
Vishay SiliconixSi5402BDCDocument Number: N-Channel 30-V (D-S) MOSFETFEATURES•Halogen-free According to IEC 61249-2-21Available•TrenchFET ® Power MOSFETPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)300.035 at V GS = 10 V 6.70.042 at V GS = 4.5 V6.1Notes:a.Surface Mounted on 1" x 1" FR4 board.b.See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.c.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted´ParameterSymbol 5 sSteady State Unit Drain-Source Voltage V DS 30VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 150 °C)a T A = 25 °C I D 6.7 4.9AT A = 85 °C4.83.5Pulsed Drain CurrentI DM 20Continuous Source Current (Diode Conduction)a I S2.1 1.1Maximum Power DissipationaT A = 25 °C P D 2.5 1.3W T A = 85 °C1.30.7Operating Junction and Storage T emperature Range T J , T stg- 55 to 150°C Soldering Recommendations (Peak Temperature)b, c260THERMAL RESISTANCE RATINGSParameterSymbol Typical MaximumUnitMaximum Junction-to-Ambient a t ≤ 5 s R thJA 4550°C/W Steady State 8095Maximum Junction-to-Foot (Drain)Steady StateR thJF1822 Document Number: 73051Vishay SiliconixSi5402BDCNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.TYPICAL CHARACTERISTICS T J = 25°C, unless otherwise notedSPECIFICATIONSParameter SymbolTest ConditionsMin.Typ.Max.UnitStaticGate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.03.0VGate-Body LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100nAZero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1µA V DS = 30 V , V GS = 0 V , T J = 85 °C5On-State Drain Current aI D(on) V DS ≥ 5 V, V GS = 10 V 20A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 4.9 A 0.0290.035ΩV GS = 4.5 V , I D = 4.4 A 0.0350.042Forward T ransconductance a g fs V DS = 10 V , I D = 4.9 A 19S Diode Forward Voltage a V SDI S = 1.1 A, V GS = 0 V0.81.2VDynamic bTotal Gate Charge Q g V DS = 15 V , V GS = 10 V, I D = 4.9 A1020nCGate-Source Charge Q gs 1.9Gate-Drain Charge Q gd 1.6Gate Resistance R g f = 1 MHz14ΩTurn-On Delay Time t d(on) V DD = 15 V , R L = 15 Ω I D ≅ 1 A, V GEN = 10 V , R g = 6 Ω1015ns Rise Timet r 1015Turn-Off Delay Time t d(off) 2740Fall Timet f 1015Source-Drain Reverse Recovery Timet rrI F = 1.1 A, dI/dt = 100 A/µs 2060Output Characteristics Transfer CharacteristicsDocument Number: Vishay SiliconixSi5402BDCTYPICAL CHARACTERISTICS 25°C, unless otherwise notedSource-Drain Diode Forward VoltageOn-Resistance vs. Gate-to-Source VoltageSi5402BDCVishay SiliconixTYPICAL CHARACTERISTICS 25Threshold Voltage Single Pulse PowerSafe Operating Area ArrayNormalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 73051Document Number: Vishay SiliconixSi5402BDCTYPICAL CHARACTERISTICS 25°C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?73051.Normalized Thermal Transient Impedance, Junction-to-FootVishay Siliconix1206-8 ChipFET R5.No mold flash allowed on the top and bottom lead surface.AN811Vishay Siliconix Single-Channel 1206-8 ChipFET r Power MOSFET Recommended Pad Pattern and Thermal PerformanceINTRODUCTIONNew Vishay Siliconix ChipFETs in the leadless 1206-8package feature the same outline as popular 1206-8 resistorsand capacitors but provide all the performance of true powersemiconductor devices. The 1206-8 ChipFET has the samefootprint as the body of the LITTLE FOOT R TSOP-6, and canbe thought of as a leadless TSOP-6 for purposes of visualizingboard area, but its thermal performance bears comparisonwith the much larger SO-8.This technical note discusses the single-channel ChipFET1206-8 pin-out, package outline, pad patterns, evaluationboard layout, and thermal performance.PIN-OUTFigure 1 shows the pin-out description and Pin 1 identification for the single-channel 1206-8 ChipFET device. The pin-out is similar to the TSOP-6 configuration, with two additional drain pins to enhance power dissipation and thermal performance. The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a larger die to be fitted in the device if necessary.Single 1206-8 ChipFE TBottom ViewFIGURE 1.For package dimensions see the 1206-8 ChipFET package outline drawing (/doc?71151).BASIC PAD PATTERNSThe basic pad layout with dimensions is shown in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for VishaySiliconix MOSFET s, (/doc?72286). This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads.FIGURE 2. Footprint With Copper Spreading80 mil68 mil28 mil26 milThe pad pattern with copper spreading shown in Figure 2 improves the thermal area of the drain connections (pins 1,2,3,6.7,8) while remaining within the confines of the basic footprint. The drain copper area is 0.0054 sq. in. or 3.51 sq. mm). This will assist the power dissipation path away from the device (through the copper leadframe) and into the board and exterior chassis (if applicable) for the single device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. An example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3).THE VISHAY SILICONIX EVALUATION BOARD FOR THE SINGLE 1206-8The ChipFET 1206-08 evaluation board measures 0.6 in by 0.5 in. Its copper pad pattern consists of an increased pad area around the six drain leads on the top-side—approximately 0.0482 sq. in. 31.1 sq. mm—and vias added through to the underside of the board, again with a maximized copper pad area of approximately the board-size dimensions. The outer package outline is for the 8-pin DIP, which will allow test sockets to be used to assist in testing.The thermal performance of the 1206-8 on this board has been measured with the results following on the next page. The testing included comparison with the minimum recommended footprint on the evaluation board-size pcb and the industry standard one-inch square FR4 pcb with copper on both sides of the board.AN811 Vishay SiliconixFront of BoardFIGURE 3.Back of BoardTHERMAL PERFORMANCEJunction-to-Foot Thermal Resistance(the Package Performance)Thermal performance for the 1206-8 ChipFET measured asjunction-to-foot thermal resistance is 15_C/W typical, 20_C/Wmaximum for the single device. The “foot” is the drain lead ofthe device as it connects with the body. This is identical to theSO-8 package R Q jf performance, a feat made possible byshortening the leads to the point where they become only asmall part of the total footprint area.Junction-to-Ambient Thermal Resistance(dependent on pcb size)The typical R Q ja for the single-channel 1206-8 ChipFET is80_C/W steady state, compared with 68_C/W for the SO-8.Maximum ratings are 95_C/W for the 1206-8 versus 80_C/Wfor the SO-8.TestingTo aid comparison further, Figure 4 illustrates ChipFET 1206-8thermal performance on two different board sizes and threedifferent pad patterns. The results display the thermalperformance out to steady state and produce a graphicaccount of how an increased copper pad area for the drainconnections can enhance thermal performance. Themeasured steady state values of R Q ja for the single 1206-8ChipFET are :1) Minimum recommended pad pattern (seeFigure 2) on the evaluation board size of0.5 in x 0.6 in.156_C/W2) The evaluation board with the pad patterndescribed on Figure 3.111_C/W3) Industry standard 1” square pcb withmaximum copper both sides.78_C/WThe results show that a major reduction can be made in thethermal resistance by increasing the copper drain area. In thisexample, a 45_C/W reduction was achieved without having toincrease the size of the board. If increasing board size is anoption, a further 33_C/W reduction was obtained bymaximizing the copper from the drain on the larger 1” squarepcb.Time (Secs)FIGURE 4. Single 1206−8 ChipFETThermalResistance(C/W)1160408010010001201010-110-210-310-410-5SUMMARYThe thermal results for the single-channel 1206-8 ChipFETpackage display similar power dissipation performance to theSO-8 with a footprint reduction of 80%. Careful design of thepackage has allowed for this performance to be achieved. Theshort leads allow the die size to be maximized and thermalresistance to be reduced within the confines of the TSOP-6body size.ASSOCIATED DOCUMENT1206-8 ChipFET Dual Thermal performance, AN812(/doc?71127).Application Note 826Vishay SiliconixP P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET ®Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.。
Inspiron 14 5402 维修手册.pdf_1700391356.3827653说明书
Inspiron 14 5402服务手册8 2021注意、小心和警告:“注意”表示帮助您更好地使用该产品的重要信息。
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章 1: 拆装计算机内部组件 (6)拆装计算机内部组件之前 (6)安全说明 (6)静电放电— ESD 保护 (7)ESD 现场服务套件 (7)运输敏感组件 (8)拆装计算机内部组件之后 (8)章 2: 卸下和安装组件 (9)建议工具 (9)螺钉列表 (9)Inspiron 14 5402 的主要组件 (10)基座护盖 (12)卸下基座护盖 (12)安装基座护盖 (14)电池 (16)锂离子电池预防措施 (16)卸下 3 芯电池 (17)安装 3 芯电池 (18)卸下 4 芯电池 (18)安装 4 芯电池 (19)内存模块 (20)卸下内存模块 (20)安装内存模块 (21)固态硬盘— M.2 插槽 1 (23)从 M.2 插槽 1 卸下 M.2 2230 固态硬盘 (23)在 M.2 插槽 1 中安装 M.2 2230 固态硬盘 (23)从 M.2 插槽 1 卸下 M.2 2280 固态硬盘 (24)在 M.2 插槽 1 中安装 M.2 2280 固态硬盘 (25)安装固态硬盘支架 (26)固态硬盘— M.2 插槽 2 (27)卸下 M.2 插槽 2 中的 M.2 2230 固态硬盘 (27)在 M.2 插槽 2 中安装 M.2 2230 固态硬盘 (28)卸下 M.2 插槽 2 中的 M.2 2280 固态硬盘/英特尔傲腾存储 (30)在 M.2 插槽 2 中安装 M.2 2280 固态硬盘/英特尔傲腾存储 (31)安装固态硬盘支架 (32)WLAN 卡 (33)卸下 WLAN 卡 (33)安装 WLAN 卡 (33)风扇 (35)卸下风扇 (35)安装风扇 (36)币形电池 (37)卸下币形电池 (37)目录3安装币形电池 (37)电源适配器端口 (38)卸下电源适配器端口 (38)安装电源适配器端口 (39)显示屏部件 (40)卸下显示屏部件 (40)安装显示屏部件 (42)I/O 板 (44)卸下 I/O 板 (44)安装 I/O 板 (45)触摸板 (46)卸下触摸板 (46)安装触摸板 (47)扬声器 (48)卸下扬声器（采用 3 芯电池配置） (48)安装扬声器（3 芯电池配置） (49)卸下扬声器（采用 4 芯电池配置） (50)安装扬声器（4 芯电池配置） (51)散热器 (53)卸下散热器（适用于集成 GPU） (53)安装散热器（适用于集成 GPU） (53)卸下散热器（适用于独立 GPU） (54)安装散热器（适用于独立 GPU） (55)电源按钮，带可选的指纹读取器 (56)卸下带可选的指纹读取器的电源按钮 (56)安装带可选的指纹读取器的电源按钮 (57)系统板 (58)卸下系统板 (58)安装系统板 (60)掌垫和键盘部件 (62)卸下掌托和键盘部件 (62)安装掌托和键盘部件 (63)章 3: 驱动程序与下载 (64)章 4: 系统设置程序 (65)进入 BIOS 设置程序 (65)导航键 (65)系统设置选项 (65)系统密码和设置密码 (72)分配系统设置密码 (73)删除或更改现有的系统设置密码 (73)清除 CMOS 设置 (74)清除 BIOS（系统设置）和系统密码 (74)更新 BIOS (74)在 Windows 中更新 BIOS (74)在 Windows 环境中使用 USB 驱动器更新 BIOS (74)在 Linux 和 Ubuntu 环境中更新 BIOS (75)从 F12 一次性引导菜单更新 BIOS (75)4目录在已启用 BitLocker 的系统上更新 BIOS (75)章 5: 故障排除 (76)处理膨胀锂离子电池 (76)找到戴尔计算机的服务编号或快速服务代码 (76)SupportAssist 诊断程序 (76)内置自检 (BIST) (77)系统主板内置自检 (M-BIST) (77)显示屏面板电源导轨内置自检 (L-BIST) (78)显示屏面板内置自检 (LCD-BIST) (78)结果 (79)恢复操作系统 (79)系统诊断指示灯 (79)启用英特尔傲腾内存 (80)禁用英特尔傲腾内存 (80)WiFi 重启 (81)耗尽剩余弱电（执行硬重置） (81)章 6: 获取帮助和联系戴尔 (82)目录5拆装计算机内部组件拆装计算机内部组件之前关于此任务: 根据您所订购的配置，本文档中的图像可能与您的计算机有所差异。
uf5402二极管参数
uf5402二极管参数UF5402二极管参数介绍一、引言UF5402是一款矽桥整流器二极管，广泛应用于低压高频整流电源和交流电源中。
具有高效率、高可靠性等优点，被广泛应用于电子设备中。
本文将从以下几个方面详细介绍UF5402二极管的参数。
二、额定参数1. 额定反向电压（VRRM）：UF5402二极管的额定反向电压为200V。
这意味着在正常工作条件下，二极管的反向电压不应超过200V，否则会导致器件损坏。
2. 额定直流输出电流（IO）：UF5402二极管的额定直流输出电流为3A。
在正常工作条件下，二极管的直流输出电流不应超过3A，否则会导致器件损坏。
3. 额定交流输出电流（IF(AV)）：UF5402二极管的额定交流输出电流为5A。
交流输出电流是指二极管在交流条件下的平均输出电流。
在正常工作条件下，二极管的交流输出电流不应超过5A，否则会导致器件损坏。
三、电性能参数1. 正向压降（VF）：UF5402二极管的正向压降在额定工作条件下约为0.95V。
正向压降是指二极管在正向工作时的电压损耗，也是影响二极管工作效率的重要指标。
2. 反向漏电流（IR）：UF5402二极管的反向漏电流在额定工作条件下约为5μA。
反向漏电流是指二极管在反向工作时的小电流泄漏，对于要求高精度的电子设备来说，反向漏电流应尽可能小。
3. 动态电阻（RDYN）：UF5402二极管的动态电阻在额定工作条件下约为10mΩ。
动态电阻是指二极管在正向导通状态下的电阻大小，影响二极管的导通效率和功耗。
四、热特性参数1. 热阻（Rth(j-c)）：UF5402二极管的热阻为20℃/W。
热阻是指二极管在工作过程中所产生的热量与温度差之间的比值，影响二极管的散热效果。
2. 工作温度（Tj）：UF5402二极管的工作温度范围为-55℃至+150℃。
工作温度是指二极管正常工作的温度范围，超过此范围可能会导致二极管性能下降或损坏。
五、包装参数UF5402二极管通常采用DO-201AD封装形式。
5402芯片
TMS320C54x DSP CPU与外设第一章综述1 总线结构C54x包括8条16比特宽度的总线，其中：●一条程序总线（PB）●三条数据总线（CB、DB、EB）●四条地址总线（PAB、CAB、DAB、EAB）2CPUC54x的CPU结构包括：●40比特的ALU，其输入来自16比特立即数、16比特来自数据存储器的数据、暂时存储器、T中的16比特数、数据存储器中两个16比特字、数据存储器中32比特字、累加器中40比特字。
●2个40比特的累加器，分为三个部分，保护位（39－32比特）、高位字（31－16比特）、低位字（15－0比特）。
●桶型移位器，可产生0到31比特的左移或0到16比特的右移。
●17×17比特的乘法器●40比特的加法器●比较选择和存储单元CSSU●数据地址产生器DAGEN●程序地址产生器PAGEN3外设C54x包括：●通用I/O引脚，XF和BIO●定时器●PLL时钟产生器●HPI口，8比特或16比特●同步串口●带缓存串口，BSP●多路带缓存串口，McBSP●时分复用串口，TDM●可编程等待状态产生器●可编程bank－switching模块●外部总线接口●IEEE1149.1标准JTAG口第二章 存储器一般而言，C54x 的存储空间可达192K16比特字，64K 程序空间，64K 数据空间，64KI/O 空间。
依赖其并行的工艺特性和片上RAM 双向访问的性能，在一个机器周期内，C54x 可以执行4条并行并行存储器操作：取指令，两操作数读，一操作数写。
使用片内存储器有三个优点：高速执行（不需要等待），低开销，低功耗。
1 存储空间分配图（以C549为例）复位后，中断矢量表位于程序区FF80H 位置，可重新定位于程序空间任何一个128字的页面（其地址高9比特即页号由PMST 中IPTR 确定）。
2 程序存储区C54x 有片内ROM 、DARAM 、SARAM ，这些区域可以通过软件配置到程序空间。
TM320VC5402英文手册翻译版
!DS !PS !IS !MSTRB READY
R/!W
!IOSTRB !HOLD !HOLDA !MSC
!IAQ
CLKOUT
CLKMD1 CLKMD2 CLKMD3 X2/CLKIN
X1
O/Z O/Z
I O/Z O/Z I O/Z O/Z
O/Z O/Z
I
I
O
内存控制信号 数据，程序和I/O空间选择信号。!DS,!PS和!IS总是为高电平，除非强 制置低来访问特殊的外部内存空间。有效期间对应着正当的地址信息。 在保持模式下!DS,!PS和!IS被设置成高阻态；当!OFF为低电平时，它 们也会变成高阻态。 内存选通信号。!MSTRB经常是高电平，除非声明为低层次表示外部 总线访问数据或程序内存。在保持模式下 !MSTRB被置为高阻态； 当!OFF为低电平时也会变成高阻态。 数据准备。READY表示外部设备准备为总线执行完成。如果器件没有 准备好（READY是低电平），处理机等待一个周期，然后再检测READY 信号。注意如果至少两个软件等待状态被编程后，处理机执行等待检 测。直到软件等待状态完成后READY信号不会被取样检查的。 读/写信号。R/!W表示在与外部设备通信期间直接传输数据。 R/!W通 常处于读模式（高电平），除非当DSP执行写操作时设置成低电平。 在保持模式下R/!W被置为高阻态；当!OFF为低电平时也会变成高阻 态。 I/O选通信号。!IOSTRB总是为高电平，除非置低来表示外部总线访问 一个I/O设备。在保持模式下!IOSTRB被置为高阻态；当!OFF为低电平 时也会变成高阻态。 保持。!HOLD被声明为请求控制地址，数据和控制总线。当被 ’C54x 响应时，这些总线变成高阻态。 保持响应。!HOLDA表示5402是处于保持状态，地址数据和控制总线 是高阻态，并允许外部内存接口被其他设备访问。当 !OFF为低电平 时!HOLDA也变成高阻态。 微状态完成。!MSC表示软件等待状态完成了。当两个以上的软件等待 状态被允许时，在第一个软件等待状态的开始 !MSC引脚变为有效，在 最后一个软件等待状态的开始变成无效高电平状态。如果连接了 READY输入，在最后一个内部等待状态结束后 !MSC强制一个外部等 待状态。当!OFF为低电平时!MSC!也变成高阻态。 指令采集信号。当有一个在地址总线中的地址指令时， !IAQ为低电平 有效。当!OFF为低电平时!IAQ也变成高阻态。
Atlas Copco VARIO 5 - 22 螺絞压缩机产品说明书
Screw compressors Series VARIO 5 – 22Capacity:0.40 – 3.32 m3/minModular design allows a wide range of models Reliable technology, tested components Ready for connection, compact and quiet Low-cost, high quality compressed air Intelligent microprocessor control system Purely for a large number of versionsEasy to maintain designAlso available as a packaged compressed air stationIntelligence, Innovation, ReliabilityMaximum benefits for our customers:This premise holds true for everyone at ALMIG.Our products benefit from the latest tech-niques in research and development and are manufactured according to ISO 9001: 2000 /ISO 14001: 2004 / IRIS.They fulfil all acceptance criteria according to ISO 1217 – 3 annex C – 1996 and conform to the CE-guidelines.Even the most stringent conditions, such as DET NORSKE VERITAS, GERMANISCHER LLOYD, BUREAU VERITAS, LLOYD’S REGISTER OF SHIPPING, ABS among others, are for us at ALMIG a matter of course.intelligent compressed air ... everywhere ½ ½ ½ intelligent compressed air ... everywhere ISO 9001ISO 14001Processing: optional all-in-one compressed air production with integrated cold dryer and filtration functionsᕡSeparator systemVery high quality compressed air with multistage separation ᕢAir Control 1The “brain” of the compressor:thinks, monitors, recordsᕣDrive systemHighly-efficient and safe belt drive with automatic tensioning ᕤCompressor unitVery efficient, specially developed,patented rotorsᕥCoolerLarge surface cooler provides very low discharge temperatures and optimum coolant temperatures ᕦDrive motorHighly efficient, robust drive motor with plenty of power in reserveBenefits at a glance: Patented compressor unit, automatic belt tensioning, multistage separationᕢᕡᕣᕤᕦᕥAssembly, Technique, HighlightsThe compressor system can be integrated in a higher-level control system with anintelligent compressed air ... everywhere ½ ½ ½ intelligent compressed air ... everywhere ½ ½½Compatibility, Flexibility, VarietyScrew compressorsin the VARIO 5 - 22 series The economical way to generate compressed air.The VARIO series of compressors is designed for use both by small businesses and tradesmen and in demanding industrial applications.½ VARIO 5 - 22 seriesscrew compressors - standard model½ Screw compressorVARIO 5 – 22 T model with – cold drier (+3°C DTP)– filtration½ Screw compressorVARIO 5 – 22 TR model with – cold drier (+3°C DTP)– filtration–mounted on receiver (270 or 500 litres)Piston compressorsTurbo Control,regulate, Blower。
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Document Number 86061 Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600 1 (5)
元器件交易网
SF5400...SF5408
Vishay Telefunken Electrical Characteristics
www.vishay.de • FaxBack +1-408-970-5600 3 (5)
元器件交易网
SF5400...SF5408
Vishay Telefunken Dimensions in mm
Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification ∅ 4.3 max.
96 12133
100.000 SF5405...SF5408 VR = VR RM f 1kHz RthJA 70K/W PC Board
I FAV– Average Forward Current ( A )
I F – Forward Current ( A )
v v
SF5400...SF5404 10.000 1.000 Tj = 25°C 0.100 0.010 0.001 Tj = 175°C
technical drawings according to DIN specifications
∅ 1.35 max.
26 min.
4.2 max.
26 min.
94 9587
www.vishay.de • FaxBack +1-408-970-5600 4 (5)
Document Number 86061 Rev. 3, 24-Jun-98
元器件交易网
SF5400...SF5408
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
96 12061
Figure 6. Max. Forward Current vs. Forward Voltage
100.000 SF5400...SF5404 10.000 IF – Forward Current ( A ) 1.000 0.100 0.010 0.001 20 40 60 80 100 120 140 160 180
94 9548
Tamb – Ambient Temperature ( °C )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Reverse recovery y time
IF=0.5A, IR=1A, iR=0.25A
SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 SF5400–SF5404 SF5405–SF5408
60 110 220 330 440 550 660 880 1100 50 75
元器件交易网
SF5400...SF5408
Vishay Telefunken
Super Fast Soft Recovery Rectifier
Features
D D D D
Glass passivated Hermetically sealed axial leaded glass envelope Low reverse current High reverse voltage
100
VR = VR RM f 1kHz RthJA 25K/W l=10mm
v v
10
1 20 40 60 80 100 120 140 160 180
96 12065
25
50
75
100
125
150
175
Tamb – Ambient Temperature ( °C )
Tj – Junction Temperature ( °C )
96 12062
Figure 7. Max. Forward Current vs. Forward Voltage
1000 SF5405...SF5408 I R – Reverse Current ( mA ) SF5400...SF5408 VR = VRRM
I FAV– Average Forward Current ( A )
Tamb – Ambient Temax. Average Forward Current vs. Ambient Temperature
3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
20
40
60
80 100 120 140 160 180
96 12057
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Tamb – Ambient Temperature ( °C )
VF – Forward Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Average Forward Current vs. Ambient Temperature
Figure 8. Max. Reverse Current vs. Junction Temperature
Document Number 86061 Rev. 3, 24-Jun-98
Peak forward surge current Average forward current Junction and storage temperature range
tp = 10 ms, half sinewave
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions Lead length l = 10 mm, TL = constant on PC Board with spacing 37.5 mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W