SOCAY硕凯高分子ESD型号ESD0201E002N05
硕凯ESD防静电保护器件常见故障和解决方案
RB 则B电路的耦合电流
几种主要的耦合路径
IB
C
dv dt
那么B电路的干扰电压VB
VB
RB
IB
CRB
dv dt
电容耦合电压的大小取决于几个因素：
干扰电压的变化率，越大耦合噪声越大。
互容越大，耦合噪声越大。
接收电路的阻抗越大，耦合噪声越大
几种主要的耦合路径
传导耦合： 两个电路通过一个导体连接起来，一个电
路的信号会通过导体传导进另一个电路，形成 干扰。如通过共用的电源线、地线等等进行耦 合。
几种主要的耦合路径
共阻抗耦合： 当两个或以上的电路的电流流过公共阻抗时，就会出现
共阻抗耦合。 实际上，我们绝大部分的干扰最后都是通过共阻抗耦合
的方式来影响敏感电路，本质上都是共阻抗耦合。 如前面说的辐射、电场、电感、传导最后基本上都是干
扰电流流过敏感电路的阻抗起作用的。
几种主要的耦合路径
共阻抗耦合举个很简单的例子：
V
ZL
I
Zg
如图是一个信号驱动回路，V代表信号驱动源。可以看出芯片输 出脚，Zg表示地线阻抗，ZL表示负载阻抗，可以看成芯片输入 脚。那么ZL两端的电压就是信号输入电压。I是干扰注入的电 流。
静电放电案例
台式设备测试布局
立式设备测试布局
静电放电发生器原理图
静电放电发生器元器件
150PF的电容容量主要是模拟人体的电容量，为表示人体握有 某个钥匙或工具等金属物时的源电阻可选用一个330欧姆的 电阻模拟，这种金属放电情况足以严格地表示现场的各种人 员的放电。
静电放电输出电流的是否有敏感电 路
安全数据表说明书
Safety Data Sheet 24 Hour Emergency Phone Numbers Medical/Poison Control:In U.S.: Call 1-800-222-1222Outside U.S.: Call your local poison control centerTransportation/National Response Center:1-800-535-50531-352-323-3500NOTE: The National ResponseCenter emergency numbers to be used only in the event of chemical emergencies involving a spill, leak, fire, exposure or accident involving chemicals.IMPORTANT: Provide this information to employees, customers, and users of this product. Read this SDS before handling or disposing of this product. This product is covered by the OSHA Hazard Communication Standard and this document has been prepared in accordance with requirements of this standard. All abbreviated terms used in this SDS are further described in Section 16.1. IdentificationThis Safety Data Sheet is available in American Spanish upon request.Los Datos de Serguridad pueden obtenerse en Espanol si lo riquiere.Product Name:Dynaflex 230 Clear Revision Date:10/23/20186/19/2015Product UPC Number:Supercedes Date:Product Use/Class:Caulking Compound SDS No:00017001605Preparer: Manufacturer:DAP Canada475 Finchdene Square Unit 5Scarborough, Ontario M1X 1B7888-327-8477 (non - emergency matters)Emergency Telephone: 1-800-535-5053,1-352-323-3500Regulatory and Environmental Affairs2. Hazards IdentificationGHS ClassificationNot a hazardous substance or mixture.Symbol(s) of ProductNoneSignal WordNot a hazardous substance or mixture.Possible Hazards2% of the mixture consists of ingredients of unknown acute toxicity 3. Composition/Information on IngredientsChemical Name CAS-No.Wt. %GHS Symbols GHS StatementsWhite mineral oil8042-47-57-13GHS07-GHS08H304-312Ethylene glycol107-21-11-5GHS07H332Amorphous silica112945-52-50.5-1.5GHS07H315-319-332-335The text for GHS Hazard Statements shown above (if any) is given in the "Other information" Section.4. First-aid MeasuresFIRST AID - INHALATION: Material is not likely to present an inhalation hazard at ambient conditions. If you experience difficulty in breathing, leave the area to obtain fresh air. If continued difficulty is experienced, get medical attention immediately.FIRST AID - SKIN CONTACT: In case of contact, wash skin immediately with soap and water.FIRST AID - EYE CONTACT: In case of contact, immediately flush eyes with large quantities of water for at least 15 minutes until irritation subsides. Get medical attention immediately.FIRST AID - INGESTION: If swallowed, DO NOT INDUCE VOMITING. Get medical attention immediately.5. Fire-fighting MeasuresUNUSUAL FIRE AND EXPLOSION HAZARDS: No InformationSPECIAL FIREFIGHTING PROCEDURES: Wear self-contained breathing apparatus pressure-demand (NIOSH approved or equivalent) and full protective gear. Use water spray to cool exposed surfaces.EXTINGUISHING MEDIA: Alcohol Foam, Carbon Dioxide, Dry Chemical, Foam, Water Fog6. Accidental Release MeasuresENVIRONMENTAL MEASURES: No InformationSTEPS TO BE TAKEN IF MATERIAL IS RELEASED OR SPILLED: Use personal protective equipment as necessary. In case of spillage, absorb with inert material and dispose of in accordance with applicable regulations. Scrape up dried material and place into containers.7. Handling and StorageHANDLING: KEEP OUT OF REACH OF CHILDREN!DO NOT TAKE INTERNALLY. Use only with adequate ventilation. Ensure fresh air entry during application and drying. Wash thoroughly after handling.STORAGE: Avoid excessive heat and freezing. Do not store at temperatures above 120 degrees F. Store away from caustics and oxidizers.8. Exposure Controls/Personal ProtectionIngredients with Occupational Exposure LimitsChemical Name ACGIH TLV-TWA ACGIH-TLV STEL OSHA PEL-TWA OSHA PEL-CEILING White mineral oil N.E.N.E.N.E.N.E.Ethylene glycol N.E.N.E.N.E.N.E.Amorphous silica N.E.N.E.N.E.N.E.Further Advice: MEL = Maximum Exposure Limit OES = Occupational Exposure Standard SUP = Supplier's RecommendationSk = Skin Sensitizer N.E. = Not EstablishedPersonal ProtectionRESPIRATORY PROTECTION: No personal respiratory protective equipment normally required.SKIN PROTECTION: Rubber gloves.EYE PROTECTION: Goggles or safety glasses with side shields.OTHER PROTECTIVE EQUIPMENT: Not required under normal use.HYGIENIC PRACTICES: Wash hands before breaks and at the end of workday. Remove and wash contaminatedclothing before re-use.9. Physical and Chemical PropertiesPhysical State:PasteAppearance:White ( changes to clear as it cures)Odor:Very Slight Ammonia Odor Threshold:Not Established Density, g/cm3: 1.04 - 1.04pH:Between 7.0 and 12.0 Freeze Point, °C:Not Established Viscosity (mPa.s):Not Established Solubility in Water:No Information Partition Coeff., n-octanol/water:Not Established Decomposition Temperature, °C:Not Established Explosive Limits, %:N.E. - N.E.Boiling Range, °C:100 - 100Auto-Ignition Temperature, °C Not Established Minimum Flash Point, °C:100Vapor Pressure, mmHg:Not Established Evaporation Rate:Slower Than n-Butyl Acetate Flash Method:Seta Closed CupVapor Density:Heavier Than Air Flammability, NFPA:Non-Flammable Combustibility:Does not support combustion(See "Other information" Section for abbreviation legend)(If product is an aerosol, the flash point stated above is that of the propellant.)10. Stability and ReactivitySTABILITY: Stable under recommended storage conditions.CONDITIONS TO AVOID: Excessive heat and freezing.INCOMPATIBILITY: Incompatible with strong bases and oxidizing agents.HAZARDOUS DECOMPOSITION PRODUCTS: Normal decomposition products, i.e., COx, NOx.11. Toxicological InformationEFFECT OF OVEREXPOSURE - INHALATION: Under normal use conditions, this product is not expected to cause adverse health effects. Inhalation of vapors in high concentration may cause mild irritation of respiratory system (nose, mouth, mucous membranes). EFFECT OF OVEREXPOSURE - SKIN CONTACT: Under normal use conditions, this product is not expected to cause adverse health effects. Prolonged or repeated contact with skin may cause mild irritation.EFFECT OF OVEREXPOSURE - EYE CONTACT: Under normal use conditions, this product is not expected to cause adverse health effects. Direct eye contact may cause irritation.EFFECT OF OVEREXPOSURE - INGESTION: Under normal use conditions, this product is not expected to cause adverse health effects. Single dose oral toxicity is very low. Amounts ingested incidental to industrial handling are not likely to cause injury; however, ingestion of large amounts may cause injury. Ingestion of ethylene glycol can cause gastrointestinal irritation, nausea, vomiting, diarrhea and if ingested in sufficient quantities, death.CARCINOGENICITY: No InformationEFFECT OF OVEREXPOSURE - CHRONIC HAZARDS: Repeated or prolonged exposure may cause mild irritation of eyes and skin. Ethylene Glycol may cause kidney and liver damage upon prolonged and repeated overexposures. Studies have shown that repeated inhalation of ethylene glycol has produced adverse cardiovascular changes in laboratory animals. Ethylene glycol has been shown to cause birth defects in laboratory animals.PRIMARY ROUTE(S) OF ENTRY: Skin Contact, InhalationAcute Toxicity ValuesThe acute effects of this product have not been tested. Data on individual components are tabulated belowCAS-No.Chemical Name Oral LD50Dermal LD50Vapor LC508042-47-5White mineral oil>5000 mg/kg Rat2000 mg/kg Rabbit>20 mg/L107-21-1Ethylene glycol4700 mg/kg Rat9530 mg/kg Rabbit N.I.112945-52-5Amorphous silica>3300 mg/kg Rat>2000 mg/kg Rabbit>20 mg/LN.I. = No Information12. Ecological InformationECOLOGICAL INFORMATION: Ecological injuries are not known or expected under normal use.13. Disposal InformationDISPOSAL INFORMATION: This product does not meet the definition of a hazardous waste according to U.S. EPA Hazardous Waste Management Regulation, 40 CFR Section 261. Dispose as hazardous waste according to all local, state, federal and provincial regulations. State and Local regulations/restrictions are complex and may differ from Federal regulations. Responsibility for proper waste disposal is with the owner of the waste.14. Transport InformationSPECIAL TRANSPORT PRECAUTIONS: No InformationDOT UN/NA Number:N.A.DOT Proper Shipping Name:Not RegulatedDOT Technical Name:N.A.DOT Hazard Class:N.A.Hazard SubClass:N.A.Packing Group:N.A.15. Regulatory InformationSARA SECTION 313:This product contains the following substances subject to the reporting requirements of Section 313 of Title III of theSuperfund Amendment and Reauthorization Act of 1986 and 40 CFR part 372:Chemical Name CAS-No.Ethylene glycol107-21-1TOXIC SUBSTANCES CONTROL ACT:All ingredients in this product are either on TSCA inventory list, or otherwise exempt.This product contains the following chemical substances subject to the reporting requirements of TSCA 12(B) if exported fromthe United States:No TSCA 12(b) components exist in this product.16. Other InformationSupersedes Date:6/19/2015Revision Date:10/23/2018Reason for revision:Revision Description ChangedProduct Composition ChangedSubstance and/or Product Properties Changed in Section(s):01 - Product Information05 - Flammability Information08 - Exposure Controls/Personal Protection09 - Physical & Chemical Information11 - Toxicological Information14 - Transportation Information15 - Regulatory Information16 - Other InformationSubstance Regulatory CAS Number ChangedSubstance Hazardous Flag ChangedSubstance Hazard Threshold % ChangedRevision Statement(s) ChangedDatasheet produced by:Regulatory DepartmentHMIS Ratings:Health:Flammability:Reactivity:Personal Protection: 110XVOC Less Water Less Exempt Solvent, g/L:48.9VOC Material, g/L:280.0VOC as Defined by California Consumer Product Regulation, Wt/Wt%:VOC Actual, Wt/Wt%: 2.7Text for GHS Hazard Statements shown in Section 3 describing each ingredient:H304May be fatal if swallowed and enters airways.H312Harmful in contact with skin.H315Causes skin irritation.H319Causes serious eye irritation.H332Harmful if inhaled.H335May cause respiratory irritation.Icons for GHS Pictograms shown in Section 3 describing each ingredient:GHS07GHS08Legend: N.A. - Not Applicable, N.E. - Not Established, N.D. - Not DeterminedDAP believes the data and statements contained herein are accurate as of the date hereof. They are offered in good faith as typical values and not as a product specification. NO WARRANTY OF MERCHANTABILITY, WARRANTY OF FITNESS FOR ANY PARTICULAR PURPOSE OR ANY OTHER WARRANTY, EXPRESS OR IMPLIED, IS MADE WITH REGARD TO THE INFORMATION HEREIN PROVIDED OR THE PRODUCT TO WHICH THE INFORMATION REFERS. Since thisdocument is intended only as a guide to the appropriate use and precautionary handling of the referenced product by a properly trained person, it is therefore the responsibility of the user to (i) review the recommendations with due consideration for the specific context of the intended use and (ii) determine if they are appropriate.。
高分子化学中英文对照
05. 高分子化学高分子物质brush polymercoiling type polymer聚合与高分子化学反应17环状单体cyclic monomer18共聚单体comonomer19聚合［反应］polymerization20均聚反应homopolymerization21低聚反应，齐聚反应 (曾用名)oligomerization22调聚反应telomerization23自发聚合spontaneous polymerization 24预聚合prepolymerization25后聚合post polymerization26再聚合repolymerization27铸塑聚合, 浇铸聚合cast polymerization28链［式］聚合chain polymerization29烯类聚合，乙烯基聚合vinyl polymerization30双烯［类］聚合diene polymerization31加［成］聚［合］addition polymerization32自由基聚合，游离基聚合 (曾用名)free radical polymerization, radical polymerization33控制自由基聚合，可控自由基聚合controlled radical polymerization，CRP 34活性自由基聚合living radical polymerization35原子转移自由基聚合atom transfer radical polymerization，ATRP36反向原子转移自由基聚合reverse atom transfer radicalpolymerization， RATRP37可逆加成断裂链转移reversible addition fragmentation chaintransfer，RAFT38氮氧[自由基]调控聚合nitroxide mediated polymerization39稳定自由基聚合stable free radical polymerization，FRP40自由基异构化聚合free radical isomerizationpolymerization41自由基开环聚合radical ring opening polymerization 42氧化还原聚合redox polymerization43无活性端聚合，死端聚合 (曾用名)dead end polymerization44光［致］聚合photo polymerization45光引发聚合light initiated polymerization46光敏聚合photosensitized polymerization47四中心聚合four center polymerization48电荷转移聚合charge transfer polymerization49辐射引发聚合radiation initiated polymerization 50热聚合thermal polymerization51电解聚合electrolytic polymerization52等离子体聚合plasma polymerization53易位聚合metathesis polymerization54开环易位聚合ring opening metathesis polymerization，ROMP55精密聚合precision polymerization56环化聚合cyclopolymerization57拓扑化学聚合topochemical polymerization 58平衡聚合equilibrium polymerization 59离子［型］聚合ionic polymerization60辐射离子聚合radiation ion polymerization 61离子对聚合ion pair polymerization62正离子聚合，阳离子聚合cationic polymerization63碳正离子聚合carbenium ionpolymerization,carbocationicpolymerization64假正离子聚合pseudo cationic polymerization65假正离子活［性］聚合pseudo cationic living polymerization 66活性正离子聚合living cationic polymerization67负离子聚合，阴离子聚合anionic polymerization68碳负离子聚合carbanionic polymerization69活性负离子聚合living anionic polymerization70负离子环化聚合anionic cyclopolymerization71负离子电化学聚合anionic electrochemical polymerization 72负离子异构化聚合anionic isomerization polymerization 73烯丙基聚合allylic polymerization74活［性］聚合living polymerization75两性离子聚合zwitterion polymerization76齐格勒-纳塔聚合Ziegler Natta polymerization77配位聚合coordination polymerization78配位离子聚合coordinated ionic polymerization79配位负离子聚合coordinated anionic polymerization80配位正离子聚合coordinated cationic polymerization 81插入聚合insertion polymerization82定向聚合，立构规整聚合stereoregular polymerization, stereospecific polymerization83有规立构聚合tactic polymerization84全同立构聚合isospecific polymerization85不对称诱导聚合asymmetric induction polymerization 86不对称选择性聚合asymmetric selective polymerization87不对称立体选择性聚合asymmetric stereoselectivepolymerization88对映［体］不对称聚合enantioasymmetric polymerization 89对映［体］对称聚合enantiosymmetric polymerization90异构化聚合isomerization polymerization91氢转移聚合hydrogen transfer polymerization 92基团转移聚合group transfer polymerization，GTP 93消除聚合elimination polymerization94模板聚合matrix polymerization,templatepolymerization95插层聚合intercalation polymerization96无催化聚合uncatalyzed polymerization97开环聚合ring opening polymerization98活性开环聚合living ring opening polymerization 99不死的聚合immortal polymerization100酶聚合作用enzymatic polymerization101聚加成反应，逐步加成聚合 (曾用名)polyaddition102偶联聚合coupling polymerization103序列聚合sequential polymerization104闪发聚合，俗称暴聚flash polymerization105氧化聚合oxidative polymerization106氧化偶联聚合oxidative coupling polymerization 107逐步［增长］聚合step growth polymerization108缩聚反应condensation polymerization，polycondensation109酯交换型聚合transesterification typepolymerization,ester exchange polycondensation110自催化缩聚autocatalytic polycondensation 111均相聚合homogeneous polymerization112非均相聚合heterogeneous polymerization 113相转化聚合phase inversion polymerization114本体聚合bulk polymerization, masspolymerization115固相聚合solid phase polymerization 116气相聚合gaseous polymerization,gas phase polymerization117吸附聚合adsorption polymerization 118溶液聚合solution polymerization119沉淀聚合precipitation polymerization 120淤浆聚合slurry polymerization121悬浮聚合suspension polymerization122反相悬浮聚合reversed phase suspensionpolymerization123珠状聚合bead polymerization, pearlpolymerization124分散聚合dispersion polymerization125反相分散聚合inverse dispersion polymerization126种子聚合seeding polymerization127乳液聚合emulsion polymerization128无乳化剂乳液聚合emulsifier free emulsion polymerization 129反相乳液聚合inverse emulsion polymerization130微乳液聚合micro emulsion polymerization131连续聚合continuous polymerization132半连续聚合semicontinuous polymerization133分批聚合，间歇聚合batch polymerization134原位聚合in situ polymerization135均相缩聚homopolycondensation136活化缩聚activated polycondensation137熔融缩聚melt phase polycondensation138固相缩聚solid phase polycondensation139体型缩聚three dimensional polycondensation 140界面聚合interfacial polymerization141界面缩聚interfacial polycondensation142环加成聚合cycloaddition polymerization143环烯聚合cycloalkene polymerization144环硅氧烷聚合cyclosiloxane polymerization145引发剂initiator146引发剂活性activity of initiator147聚合催化剂polymerization catalyst148自由基引发剂radical initiator149偶氮［类］引发剂azo type initiator1502,2′偶氮二异丁腈2,2'- azobisisobutyronitrile, AIBN 151过氧化苯甲酰benzoyl peroxide, BPO152过硫酸盐引发剂persulphate initiator153复合引发体系complex initiation system154氧化还原引发剂redox initiator155电荷转移复合物，电荷转移络合物charge transfer complex, CTC156聚合加速剂，聚合促进剂polymerization accelerator157光敏引发剂photoinitiator158双官能引发剂bifunctional initiator， difunctionalinitiator159三官能引发剂trifunctional initiator160大分子引发剂macroinitiator161引发-转移剂initiator transfer agent, inifer162引发-转移-终止剂initiator transfer agent terminator,iniferter163光引发转移终止剂photoiniferter164热引发转移终止剂thermoiniferter165正离子催化剂cationic catalyst166正离子引发剂cationic initiator167负离子引发剂ionioic initiator168共引发剂coinitiator169烷基锂引发剂alkyllithium initiator170负离子自由基引发剂anion radical initiator171烯醇钠引发剂alfin initiator172齐格勒-纳塔催化剂Ziegler Natta catalyst173过渡金属催化剂transition metal catalyst174双组分催化剂bicomponent catalyst175后过渡金属催化剂late transition metal catalyst 176金属络合物催化剂metal complex catalyst177［二］茂金属催化剂metallocene catalyst178甲基铝氧烷methylaluminoxane, MAO179μ氧桥双金属烷氧化物催化剂bimetallic μ-oxo alkoxides catalyst180双金属催化剂bimetallic catalyst 181桥基茂金属bridged metallocene182限定几何构型茂金属催化剂constrained geometry metallocenecatalyst183均相茂金属催化剂homogeneous metallocene catalyst 184链引发chain initiation185热引发thermal initiation186染料敏化光引发dye sensitized phtoinitiation 187电荷转移引发charge transfer initiation188诱导期induction period189引发剂效率initiator efficiency190诱导分解induced decomposition191再引发reinitiation192链增长chain growth, chain propagation193增长链端propagating chain end194活性种reactive species195活性中心active center196持续自由基persistent radical197聚合最高温度ceilling temperature of polymerization 198链终止chain termination199双分子终止bimolecular termination200初级自由基终止primary radical termination201扩散控制终止diffusion controlled termination202歧化终止disproportionation termination203偶合终止coupling termination204单分子终止unimolecular termination205自发终止spontaneous termination206终止剂terminator207链终止剂chain terminating agent208假终止pseudotermination209自发终止self termination210自由基捕获剂radical scavenger211旋转光闸法rotating sector method212自由基寿命free radical lifetime213凝胶效应gel effect214自动加速效应autoacceleration effect215链转移chain transfer216链转移剂chain transfer agent217尾咬转移backbitting transfer218退化链转移degradation (degradative) chaintransfer219加成断裂链转移［反应］addition fragmentation chain transfer 220链转移常数chain transfer constant221①缓聚作用②延迟作用retardation222阻聚作用inhibition223缓聚剂retarder224缓聚剂，阻滞剂retarding agent225阻聚剂inhibitor226封端［反应］end capping227端基terminal group228聚合动力学polymerization kinetics229聚合热力学polymerization thermodynamics230聚合热heat of polymerization231共聚合［反应］copolymerization232二元共聚合binary copolymerization233三元共聚合ternary copolymerization234竞聚率reactivity ratio235自由基共聚合radical copolymerization236离子共聚合ionic copolymerization237无规共聚合random copolymerization238理想共聚合ideal copolymerization239交替共聚合alternating copolymerization240恒［组］分共聚合azeotropic copolymerization241接枝共聚合graft copolymerization242嵌段共聚合block copolymerization243开环共聚合ring opening copolymerization244共聚合方程copolymerization equation245共缩聚copolycondensation246逐步共聚合step copolymerization247同种增长homopropagation248自增长self propagation249交叉增长cross propagation250前末端基效应penultimate effect251交叉终止cross termination252Q值Q value253e值e value254Q,e概念Q, e scheme255序列长度分布sequence length distribution256侧基反应reaction of pendant group257扩链剂，链增长剂chain extender258交联crosslinking259化学交联chemical crosslinking260自交联self crosslinking261光交联photocrosslinking262交联度degree of crosslinking263硫化vulcanization264固化curing265硫［黄］硫化sulfur vulcanization266促进硫化accelerated sulfur vulcanization 267过氧化物交联peroxide crosslinking268无规交联random crosslinking269交联密度crosslinking density270交联指数crosslinking index271解聚depolymerization高分子物理化学与高分子物理12立构嵌段stereoblock13有规立构嵌段isotactic block14无规立构嵌段atactic block15单体单元monomeric unit16二单元组diad17三单元组triad18四单元组tetrad19五单元组pentad20无规线团random coil21自由连接链freely-jointed chain22自由旋转链freely-rotating chain23蠕虫状链worm-like chain24柔性链flexible chain25链柔性chain flexibility26刚性链rigid chain27棒状链rodlike chain28链刚性chain rigidity29聚集aggregation30聚集体aggregate31凝聚、聚集coalescence32链缠结chain entanglement33凝聚缠结cohesional entanglement34物理缠结physical entanglement35拓扑缠结topological entanglement36凝聚相condensed phase37凝聚态condensed state38凝聚过程condensing process39临界聚集浓度critical aggregation concentration 40线团-球粒转换coil-globule transition41受限链confined chain42受限态confined state43物理交联physical crosslinking44统计线团statistical coil45等效链equivalent chain46统计链段statistical segment47链段chain segment48链构象chain conformation49无规线团模型random coil model50无规行走模型random walk model51自避随机行走模型self avoiding walk model52卷曲构象coiled conformation53高斯链Gaussian chain54无扰尺寸unperturbed dimension55扰动尺寸perturbed dimension56热力学等效球thermodynamically equivalent sphere 57近程分子内相互作用short-range intramolecular interaction 58远程分子内相互作用long-range intramolecular interaction 59链间相互作用interchain interaction60链间距interchain spacing61长程有序long range order62近程有序short range order63回转半径radius of gyration64末端间矢量end-to-end vector65链末端chain end66末端距end-to-end distance67无扰末端距unperturbed end-to-end distance68均方根末端距root-mean-square end-to-end distance 69伸直长度contour length70相关长度persistence length71主链；链骨架chain backbone72支链branch chain73链支化chain branching74短支链short-chain branch75长支链long-chain branch76支化系数branching index77支化密度branching density78支化度degree of branching79交联度degree of crosslinking80网络network81网络密度network density82溶胀swelling83平衡溶胀equilibrium swelling84分子组装，分子组合molecular assembly85自组装self assembly86微凝胶microgel87凝胶点gel point88可逆[性]凝胶reversible gel89溶胶-凝胶转化sol-gel transformation90临界胶束浓度critical micelle concentration，CMC91组成非均一性constitutional heterogenity,compositional heterogenity92摩尔质量平均molar mass average又称“分子量平均”93数均分子量number-average molecular weight,number-average molar mass94重均分子量weight-average molecular weight,weight-average molar mass95Z均分子量Z(Zaverage)-average molecular weight,Z-molar mass96黏均分子量viscosity-average molecular weight，viscosity-average molar mass97表观摩尔质量apparent molar mass98表观分子量apparent molecular weight99聚合度degree of polymerization100动力学链长kinetic chain length101单分散性monodispersity102临界分子量critical molecular weight103分子量分布molecular weight distribution，MWD104多分散性指数polydispersity index，PID105平均聚合度average degree of polymerization106质量分布函数mass distribution function107数量分布函数number distribution function108重量分布函数weight distribution function109舒尔茨-齐姆分布Schulz-Zimm distribution110最概然分布most probable distribution 曾用名“最可几分布”111对数正态分布logarithmic normal distribution 又称“对数正则分布”112聚合物溶液polymer solution113聚合物-溶剂相互作用polymer-solvent interaction114溶剂热力学性质thermodynamic quality of solvent115均方末端距mean square end to end distance116均方旋转半径mean square radius of gyration117θ温度theta temperature118θ态theta state119θ溶剂theta solvent120良溶剂good solvent121不良溶剂poor solvent122位力系数Virial coefficient曾用名“维里系数”123排除体积excluded volume124溶胀因子expansion factor125溶胀度degree of swelling126弗洛里-哈金斯理论Flory-Huggins theory127哈金斯公式Huggins equation128哈金斯系数Huggins coefficient129χ(相互作用)参数χ-parameter130溶度参数solubility parameter131摩擦系数frictional coefficient132流体力学等效球hydrodynamically equivalent sphere 133流体力学体积hydrodynamic volume134珠-棒模型bead-rod model135球-簧链模型ball-spring [chain] model136流动双折射flow birefringence, streamingbirefringence137动态光散射dynamic light scattering138小角激光光散射low angle laser light scattering139沉降平衡sedimentation equilibrium140沉降系数sedimentation coefficient141沉降速度法sedimentation velocity method142沉降平衡法sedimentation equilibrium method143相对黏度relative viscosity144相对黏度增量relative viscosity increment145黏度比viscosity ratio146黏数viscosity number147[乌氏]稀释黏度计[Ubbelohde] dilution viscometer148毛细管黏度计capillary viscometer149落球黏度计ball viscometer150落球黏度ball viscosity151本体黏度bulk viscosity152比浓黏度reduced viscosity153比浓对数黏度inherent viscosity, logarithmicviscosity number154特性黏数intrinsic viscosity, limitingviscosity number155黏度函数viscosity function156零切变速率黏度zero shear viscosity157端基分析analysis of end group158蒸气压渗透法vapor pressure osmometry, VPO159辐射的相干弹性散射coherent elastic scattering ofradiation160折光指数增量refractive index increment161瑞利比Rayleigh ratio162超瑞利比excess Rayleigh ratio163粒子散射函数particle scattering function164粒子散射因子particle scattering factor165齐姆图Zimm plot166散射的非对称性dissymmetry of scattering167解偏振作用depolarization168分级fractionation169沉淀分级precipitation fractionation170萃取分级extraction fractionation171色谱分级chromatographic fractionation172柱分级column fractionation173洗脱分级，淋洗分级elution fractionation174热分级thermal fractionation175凝胶色谱法gel chromatography176摩尔质量排除极限molar mass exclusion limit177溶剂梯度洗脱色谱法solvent gradient [elution]chromatography178分子量排除极限molecular weight exclusion limit179洗脱体积elution volume180普适标定universal calibration181加宽函数spreading function182链轴chain axis183等同周期identity period184链重复距离chain repeating distance185晶体折叠周期crystalline fold period186构象重复单元conformational repeating unit187几何等效geometrical equivalence188螺旋链helix chain189构型无序configurational disorder190链取向无序chain orientational disorder191构象无序conformational disorder192锯齿链zigzag chain193双[股]螺旋double stranded helix194[分子]链大尺度取向global chain orientation195结晶聚合物crystalline polymer196半结晶聚合物semi-crystalline polymer197高分子晶体polymer crystal198高分子微晶polymer crystallite199结晶度degree of crystallinity, crystallinity 200高分子[异质]同晶现象macromolecular isomorphism201聚合物形态学morphology of polymer202片晶lamella, lamellar crystal203轴晶axialite204树枝[状]晶体dendrite205纤维晶fibrous crystal206串晶结构shish-kebab structure207球晶spherulite208折叠链folded chain209链折叠chain folding210折叠表面fold surface211折叠面fold plane212折叠微区fold domain213相邻再入模型adjacent re-entry model 214接线板模型switchboard model215缨状微束模型fringed-micelle model216折叠链晶体folded-chain crystal217平行链晶体parallel-chain crystal218伸展链晶体extended-chain crystal219球状链晶体globular-chain crystal220长周期long period221近程结构short-range structure222远程结构long-range structure223成核作用nucleation224分子成核作用molecular nucleation225阿夫拉米方程Avrami equation226主结晶primary crystallization 227后期结晶secondary crystallization 228外延结晶，附生结晶epitaxial crystallizationepitaxial growth229外延晶体生长，附生晶体生长230织构texture231液晶态liquid crystal state232溶致性液晶lyotopic liquid crystal233热致性液晶thermotropic liquid crystal234热致性介晶thermotropic mesomorphism235近晶相液晶smectic liquid crystal236近晶中介相smectic mesophase237近晶相smectic phase238条带织构banded texture239环带球晶ringed spherulite240向列相nematic phase241盘状相discotic phase242解取向disorientation243分聚segregation244非晶相amorphous phase曾用名“无定形相”245非晶区amorphous region246非晶态amorphous state247非晶取向amorphous orientation248链段运动segmental motion249亚稳态metastable state250相分离phase separation251亚稳相分离spinodal decomposition252bimodal decomposition253微相microphase254界面相boundary phase255相容性compatibility256混容性miscibility257不相容性incompatibility258不混容性immiscibility259增容作用compatiibilization260最低临界共溶(溶解)温度lower critical solution temperature, LCST261最高临界共溶(溶解)温upper critical solution temperature ,度UCST262浓度猝灭concentration quenching263激基缔合物荧光excimer fluorescence264激基复合物荧光exciplex fluorescence265激光共聚焦荧光显微镜laser confocal fluorescence microscopy266单轴取向uniaxial orientation267双轴取向biaxial orientation, biorientation268取向度degree of orientation269橡胶态rubber state270玻璃态glassy state271高弹态elastomeric state272黏流态viscous flow state273伸长elongation274高弹形变high elastic deformation275回缩性，弹性复原nerviness276拉伸比draw ratio, extension ratio277泊松比Poisson's ratio278杨氏模量Young's modulus279本体模量bulk modulus280剪切模量shear modulus281法向应力normal stress282剪切应力shear stress283剪切应变shear strain284屈服yielding285颈缩现象necking 又称“细颈现象”286屈服应力yield stress287屈服应变yield strain288脆性断裂brittle fracture289脆性开裂brittle cracking290脆-韧转变brittle ductile transition291脆化温度brittleness(brittle) temperature292延性破裂ductile fracture293冲击强度impact strength294拉伸强度tensile strength 又称“断裂强度,breaking stren gth”295极限拉伸强度ultimate tensile strength296抗撕强度tearing strength 又称“抗扯强度”297弯曲强度flexural strength, bending strength298弯曲模量bending modulus299弯曲应变bending strain300弯曲应力bending stress301收缩开裂shrinkage crack302剪切强度shear strength303剥离强度peeling strength304疲劳强度fatigue strength, fatigue resistance305挠曲deflection306压缩强度compressive strength307压缩永久变形compression set308压缩变形compressive deformation309压痕硬度indentation hardness310洛氏硬度Rockwell hardness311布氏硬度Brinell hardness312抗刮性scrath resistance313断裂力学fracture mechanics314力学破坏mechanical failure315应力强度因子stress intensity factor316断裂伸长elongation at break317屈服强度yield strength318断裂韧性fracture toughness319弹性形变elastic deformation320弹性滞后elastic hysteresis321弹性elasticity322弹性模量modulus of elasticity323弹性回复elastic recovery324不可回复形变irrecoverable deformation325裂缝crack 俗称“龟裂”326银纹craze327形变；变形deformation328永久变形deformation set329剩余变形residual deformation330剩余伸长residual stretch331回弹，回弹性resilience332延迟形变retarded deformation333延迟弹性retarded elasticity334可逆形变reversible deformation335应力开裂stress cracking336应力-应变曲线stress strain curve337拉伸应变stretching strain338拉伸应力弛豫tensile stress relaxation339热历史thermal history340热收缩thermoshrinking341扭辫分析torsional braid analysis，TBA342应力致白stress whitening343应变能strain energy344应变张量strain tensor345剩余应力residual stress346应变硬化strain hardening347应变软化strain softening348电流变液electrorheological fluid349假塑性pseudoplastic350拉胀性auxiticity351牛顿流体Newtonian fluid352非牛顿流体non-Newtonian fluid353宾汉姆流体Bingham fluid354冷流cold flow355牛顿剪切黏度Newtonian shear viscosity356剪切黏度shear viscosity357表观剪切黏度apparent shear viscosity358剪切变稀shear thinning359触变性thixotropy360塑性形变plastic deformation361塑性流动plastic flow362体积弛豫volume relaxation363拉伸黏度extensional viscosity364黏弹性viscoelasticity365线性黏弹性linear viscoelasticity366非线性黏弹性non-linear viscoelasticity367蠕变creep368弛豫[作用]relaxation 又称“松弛”369弛豫模量relaxation modulus370蠕变柔量creep compliance371热畸变温度heat distortion temperature372弛豫谱relaxation spectrum373推迟[时间]谱retardation [time] spectrum374弛豫时间relaxation time375推迟时间retardation time376动态力学行为dynamic mechanical behavior377动态黏弹性dynamic viscoelasticity378热-机械曲线thermo-mechanical curve379动态转变dynamic transition380储能模量storage modulus381损耗模量loss modulus382复数模量complex modulus383复数柔量complex compliance384动态黏度dynamic viscosity385复数黏度complex viscosity386复数介电常数complex dielectric permittivity387介电损耗因子dielectric dissipation factor388介电损耗常数dielectric loss constant389介电弛豫时间dielectric relaxation time390玻璃化转变glass transition391玻璃化转变温度glass-transition temperature392次级弛豫secondary relaxation393次级转变secondary transition394次级弛豫温度secondary relaxation temperature395开尔文模型Kelvin model396麦克斯韦模型Maxwell model397时-温叠加原理time-temperature superpositionprinciple398玻耳兹曼叠加原理Boltzmann superposition principle399平移因子shift factor400WLF公式WLF[Williams-Lendel-Ferry] equation 401软化温度softening temperature402平衡熔点equilibrium melting point403物理老化physical ageing高分子加工技术和应用。
IXYS IC Division MXHV9910 LED驱动器说明书
INTEGRATED C IRCUITS D IVISIONMXHV9910Off-Line, High BrightnessLED DriverFeatures•8V DC to 450V DC Input Voltage Range •>90% Efficiency•Drives Multiple LEDs in Series/Parallel Combinations•Regulated LED Drive Current•Linear or PWM Brightness Control•Resistor-Programmable Oscillator Frequency •RoHS CompliantApplications•Flat-Panel Display RGB Backlighting •Signage and Decorative LED Lighting •DC/DC or AC/DC LED Driver ApplicationsDescriptionThe MXHV9910 is a low-cost, high-brightness (HB) LED driver manufactured using IXYS IC Division’s high-voltage BCDMOS on SOI process. This driver has internal circuitry that allows it to operate from a universal AC line or from 8V DC to 450V DC . This highly versatile input operating voltage enables this IC to be used in a broad range of HB LED applications.The driver features a fixed-frequency, peak-current control method, which provides an ideal solution for driving multiple LEDs in series and in parallel. In addition, LED dimming can be implemented by applying a small DC voltage to the LD pin, or by applying a low-frequency digital PWM signal to the PWMD pin.The MXHV9910 is available in a standard 8-lead SOIC package and a thermally enhanced 8-lead SOIC package with an Exposed Thermal Pad (EP)Ordering InformationMXHV9910 Block DiagramPart DescriptionMXHV9910B SOIC-8 (100/T ube)MXHV9910BTR SOIC-8 T ape & Reel (2000/Reel)MXHV9910BE SOIC-8 EP (100/T ube)With Exposed Thermal PadMXHV9910BETRSOIC-8 EP T ape & Reel (2000/Reel)With Exposed Thermal Pad1Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.1Package Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.2Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.3Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31.4Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.5Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52.1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52.2LED Driver Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52.2.1Input Voltage Regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.2.2Current Sense Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.2.3Current Sense Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2.4Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2.5Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2.6Inductor Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2.7Gate Output Drive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.2.8Linear Dimming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.2.9PWM Dimming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.2.10Combination Linear and PWM Dimming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.1Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.2ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.3Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.4Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.5Mechanical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.5.1MXHV9910B: SOIC-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.5.2MXHV9910BE: SOIC-8 With Exposed Thermal Pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.6Packaging Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123.6.1Tape & Reel Information for both 8-Pin Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121. Specifications1.1 Package Pinout1.2Pin Description1.3Absolute Maximum RatingsElectrical absolute maximum ratings are at 25°C.Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.Pin#Name1V I N Input voltage2CS LED Current Sense input. Internal current sense threshold is set at 250mV . The external sense resistor sets the maximum LED current.3GND Device Ground4GA TE External MOSFET gate driver output5PWMD Low-frequency PWM dimming control input with internal pull-down resistor.6V DD Regulated supply voltage output. Requires a storage capacitor to GND. Can be overdriven by external voltage applied to V DD .7LD Linear Dimming. Apply a voltage less than V CS(high) to dim the LED(s).8R TResistor to GND sets the oscillator/primary PWM frequency.EP -Electrical and thermal conductive pad on the bottom of the MXHV9910BE. Connect this pad to ground, and provide sufficient thermal coupling to remove heat from the package.ParameterSymbol Maximum Unit Input Voltage to GNDV I N-0.5 to +460V Inputs & Outputs Voltage to GND CS, LD, PWMD, GA TE-0.3 to V DD +0.3V V DD , Externally Applied V DD.EXT 15V Power DissipationSOIC-8 With Thermal T ab P D 2.5W SOIC-8 W/O Thermal T ab 0.975W Maximum Junction T emperature T Jmax 150°C Operating T emperature T A -40 to +85°C Junction T emperature (Operating)T J -40 to +150°C Storage T emperatureT STG-55 to +150°C1.4Recommended Operating Conditions1.5Electrical CharacteristicsUnless otherwise specified, all electrical specifications are provided for T A =25︒C.1.6Thermal Characteristics1Use of a four-layer PCB can improve thermal dissipation (reference EIA/JEDEC JESD51-5).Symbol Minimum Nominal Maximum Unit Input Voltage Range V I N 8-450V DC PWMD Frequency f PWMD -500-Hz Operating T emperatureT A-40-+85°CSymbol MinimumTypical Maximum Unit InputInput DC Voltage RangeDC Input VoltageV IN 8-450V DC Shut-Down Mode Supply Current PWMD to GND, V I N =15 to 450V I INSD -0.30.6mA Maximum Voltage to V DD Pin External Voltage applied to V DD PinV DDmax--12VRegulatorInternal Voltage Regulator V I N =15V to 450V ,I DD(ext)=0,GA TE Output=OpenV DD 7.27.88.4V DC V DD Current Available for External Circuitry -I DD(ext)--2mA V DD Load Regulation V I N =15V , I L =1mA ∆V DD --200mV PWM DimmingPWMD Input Low Voltage V I N =8V to 450V V E N (low)--0.5V PWMD Input High Voltage V I N =8V to 450V V E N (high) 2.4--PWMD Pull-Down Resistance V I N =12V , V PWMD =V DDR E N70115165k ΩCurrent Sense Comparator Current Sense (CS) Input Current CS Low CS=0V I IL --45-90μA CS HighCS=V DDI IH -0±15Current Sense Threshold Voltage -40°C < T A < 85°C V CS(high)200-280mV Current Sense Blanking Interval R T =400k Ωt BLA N K -400-ns Delay from CS T rip to Gate Low R T =400k Ωt DELAY-300-ns OscillatorOscillator Frequency (Gate Driver)R T =400k Ωf S 516477kHz Gate DriverGate High Output Voltage I OUT = -10mA V GATE (hi)V DD -0.3--V Gate Low Output Voltage I OUT =10mA V GATE (lo)-0.030.3Gate Output Rise Time C GATE =500pF t RISE -16-nsGate Output Fall TimeC GATE =500pFt FALL-7-PackageSymbol MinimumTypical MaximumUnit Thermal Resistance, Junction-to-AmbientSOIC-8 With Thermal Pad (BE) 1R θJA-50-°C/WSOIC-8 W/O Thermal Pad (B)-128-2. Functional Description Figure1Typical Application Circuit2.1 OverviewThe MXHV9910 is a high-efficiency, low cost, off-line LED driver designed using IXYS IC Division's state of the art BCDMOS on SOI process. The driver can operate from a DC supply voltage between 8 to450V DC . The versatile input supply voltage range enables this driver to be used in a broad range of applications such as flat panel display RGB backlighting, signage, decorative LED lighting, and incandescent lamp replacement.The MXHV9910 IC is configured in a buck converter topology, which is a perfect choice for off-line and DC applications driving multiple LEDs in series or parallel. This method provides excellent efficiency and enables a buck switcher design using a minimum number of external components. An external current sense resistor sets the peak current to the LED string. In addition, LED dimming can be implemented by either applying a DC control voltage to the LD pin, or by applying a low frequency, pulse-width modulated digital signal to the PWMD pin (typically 500 Hz).2.2 LED Driver Theory of OperationThe gate driver pulse width mode (PWM) control circuit is enabled by connecting the PWMD pin to the V DD pin. When enabled, the rising edge of each internal clock turns on the gate driver and the external power MOSFET, causing the inductor current to ramp up the voltage across the current sense resistor located at the CS pin. When the rising voltage at the current sense, CS, pin exceeds V CS(high), the internally set threshold, the gate drive signal goes low and turns off the external power MOSFET. T urning the power MOSFET off causes the inductor current to decay until the next rising edge of the clock, and the process repeats.The peak current threshold is set by comparing the voltage developed across the R SE N SE resistor to the internal threshold, V CS(high). This default threshold can be overridden externally by applying a voltage less than V CS(high) to the LD pin. The lower of these two thresholds limits the peak current in the inductorA soft-start function can be implemented by slowly ramping up the DC voltage at the LD pin from 0mV to a level greater than 250mV. Figure2 shows a typical recommended soft-start circuit design.Figure2Soft-Start RC NetworkFigure 3MXHV9910 Waveforms (From Application Circuit in Figure 6)2.2.1Input Voltage RegulatorThe MXHV9910 has an internal voltage regulator that can work with input voltages ranging from 12V DC to 450 V DC . When the input voltage applied at the V I N pin is greater than 12V DC , the internal voltage regulator regulates this voltage down to a typical 7.8V . The V DD pin is the internal regulator output pin and must be bypassed by a low ESR capacitor, typically 0.1μF, to provide a low impedance path for high frequency switching noise.The MXHV9910 driver does not require the bulky start-up resistors typically needed for off-linecontrollers. An internal voltage regulator provides sufficient voltage and current to power the internal IC circuits. This voltage is also available at the V DD pin, and can be used as bias voltage for external circuitry.The internal voltage regulator can by bypassed by applying an external DC voltage to the V DD pin that is slightly higher than the internal regulator’s maximum output voltage. This feature reduces power dissipation of the integrated circuit and is more suitable in isolated applications where an auxiliary transformer winding could be used to supply V DD .The total input current drawn by the V I N pin is equal to the integrated circuit quiescent current, which is 0.6mA maximum, plus the gate driver current. The gate driver current is dependant on the switching frequency and the gate charge of the external power MOSFET .The following equation can be used to approximate the V I N input current:Where Q GATE is the total gate charge of the external power MOSFET , and f S is the switching oscillator frequency.2.2.2Current Sense ResistorThe peak LED current is set by an external current sense resistor connected from the CS pin to ground. The value of the current sense resistor is calculated based on the desired average LED current, the current sense threshold, and the inductor ripple current. The inductor is typically selected to be large enough to keep the ripple current (the peak-to-peak difference in the inductor current waveform) to less than 30% of the average LED current. Factoring in this ripple current requirement, the current sense resistor can be determined by:Where:•V csth = nominal current sense threshold = 0.25V •r iout = inductor ripple = 0.3•I LED = average LED currentThe power dissipation rating of the sense resistor can be found with the following formula:CH1:50mA/div F S 65kHz CH2:CH3:5mV/div x 10Time Scale: 5μs/divMax 77mA10V/div I IN 0.6mA Q GATE f S ⨯()+≈R sense V csth10.5r iout ⨯()+[]I LED⨯-------------------------------------------------------------=P I LED 2R sense⨯=It is a good practice to select a power rating that is at least twice the calculated value. This will give proper margins, and make the design more reliable.2.2.3Current Sense BlankingThe MXHV9910 has an internal current-sense blanking circuit. When the power MOSFET is turned on, the external inductor can cause an undesired spike at the current sense pin, CS, initiating a premature termination of the gate pulse. T o avoid this condition, a typical 400ns internal leading edge blanking time is implemented. This internal feature eliminates the need for external RC filtering, thus simplifying the design. During the current sense blanking time, the current limit comparator is disabled, preventing the gate-drive circuit from terminating the gate-drive signal.2.2.4Enable/DisableConnecting the PWMD pin to V DD enables the gate driver. Connecting PWMD to G N D disables the gate driver and sets the device into the shut-down mode. In the shut-down mode, the gate output drive is disabled while all other functions remain active. The maximum quiescent current in the shut-down mode is 0.6mA.2.2.5OscillatorThe MXHV9910 operates in a constant frequency mode. Setting the oscillator frequency is achieved by connecting an external resistor between R T and G N D. In general, switching frequency selection is based on the inductor size, controller power dissipation, and the input filter capacitor.The typical off-line LED driver switching frequency, f S, is between 30kHz and 120kHz. This operating range gives designers a reasonable compromise between switching losses and inductor size. The internal RC oscillator has a frequency accuracy of ±20%. Figure4 shows the R T resistor selection for the desired f S.Figure4Resistor Selection2.2.6Inductor DesignThe inductor value is determined based on LED ripple current, maximum on-time, the forward voltage drop of all LEDs in a string at the desired current, and the minimum input voltage, which is based on design requirements. The maximum on-time is determined by the duty cycle and switching frequency. The maximum duty cycle is given by:Where:•V LEDstring is the LED string voltage at desired average LED current.•V in is the minimum input voltage to V I NThe maximum duty cycle must be restricted to less than 50% in order to prevent sub-harmonic oscillations and open loop instability.The converter maximum O N-time is given by:Where f s is the switching frequency of the internal oscillator.D maxV LEDstringV in-------------------------=t ONmaxD maxf s------------=The inductor value for the given ripple is:The inductor peak current rating is given by:2.2.7Gate Output DriveThe MXHV9910 uses an internal gate drive circuit to turn on and off an external power MOSFET . The gate driver can drive a variety of MOSFETs. For a typical off-line application, the total MOSFET gate charge will be less than 25nC.2.2.8Linear DimmingA linear dimming function can be implemented by applying a DC control voltage to the LD pin. By varying this voltage, the user can adjust the current level in the LEDs, which in turn will increase or decrease the light intensity. The control voltage to the LD pin can be generated from an external voltage divider network from V DD . This function is useful if the user requires a LED current at a particular level and there is no exact R sense value available. N ote that applying a voltage higher than the current sense threshold voltage at the LD pin will not change the output current due to the fixed threshold setting. When the LD pin is not used, it should be connected to V DD .Figure 5Typical Linear Dimming Application Circuit2.2.9PWM DimmingPulse width modulation dimming can be implemented by driving the PWMD pin with a low frequency square wave signal in the range of a few hundred Hertz. The PWMD signal controls the LED brightness by gating the PWM gate driver output pin GA TE.The signal can be generated by a microcontroller or a pulse generator with a duty cycle proportional to the amount of desired light output. When PWMD is low, gate drive is off; when PWMD is high, gate drive is enabled.L minV in V LEDstring –()t ONmax ⨯r iout I LED⨯--------------------------------------------------------------------=I Lmax I LED 10.5r iout ⨯()+[]⨯=Figure6Buck Driver for PWM Dimming Application Circuit Array2.2.10Combination Linear and PWM DimmingA combination of linear and PWM dimming techniquescan be used to achieve a large dimming ratio.Note: The output current will not go to zero if the LDpin is pulled to G N D because the minimum gate driveron-time is equal to the current sense blanking interval.T o achieve zero LED current, the PWMD pin should beused.3. Manufacturing Information3.1 Moisture SensitivityAll plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of productevaluation. We test all of our products to the maximum conditions set forth in the standard, and guaranteeproper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below.Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability.This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.3.2 ESD SensitivityThis product is ESD Sensitive , and should be handled according to the industry standard JESD-625.3.3 Reflow ProfileThis product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed.3.4 Board WashIXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based orFluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used.DeviceMXHV9910B / MXHV9910BEMSL 1DeviceMXHV9910B / MXHV9910BE260°C for 30 seconds3.5 Mechanical Dimensions3.5.1MXHV9910B: SOIC-83.5.2MXHV9910BE: SOIC-8 With Exposed Thermal PadNote: Thermal pad should be electrically connected to G N D, pin 3.3.6Packaging Information3.6.1Tape & Reel Information for both 8-Pin PackagesFor additional information please visit IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses or indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty relating to its products, including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.The products described in this document are not designed, intended, authorized, or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.Specifications: DS-MXHV9910-R04© Copyright 2014, IXYS Integrated Circuits DivisionAll rights reserved. Printed in USA.6/16/2014。
表面活性剂系列
表面活性剂系列表面活性剂系列2011年07月04日网易博客安全提醒：系统检测到您当前密码的安全性较低，为了您的账号安全，建议您适时修改密码立即修改 | 关闭表面活性剂系列品名规格产地聚乙二醇（PEG） 200～20000分子量自产、美、俄、韩甲氧基聚乙二醇（MPEG） 350,550,750,2000,5000分子量国产、美国、韩国壬基酚聚氧乙烯醚（NP/TX） 4,6,7,8,9,10,12,15,40 美、俄、国产辛基酚聚氧乙烯醚 OP-10 美国、国产高效硅油乳化剂 SCS-200GR 自产特殊异构醇聚氧乙烯醚(又名：专业硅油乳化剂) TMN-3，TMN-5，TMN-6，TMN-10 TMN-100X 美国、德国仲醇聚氧乙烯醚 15-S-3，15-S-5，15-S-7，15-S-9，15-S-12，15-S-15，15-S-20，15-S-30， 15-S-40 美国、德国烷基二苯醚二磺酸盐 2A1，3B2，8390，30599 美国低泡表面活性剂 CF，DF系列美、德EO/PO共聚物系列 L-61,L-62,L-101 美国琥珀酸二辛酯磺酸盐 GR-5M,GR-7M 美国磷酸盐系列 H-66,QS-44 美国硫酸盐和磺酸盐 XN-45S 美国异构C10脂肪醇醚 5EO,7EO 巴斯夫异构C13脂肪醇醚 3,5,7,10EO 巴斯夫椰子油二乙醇酰胺6501 (1:1)(1:1.5) 进口十二烷基硫酸钠（K12） 70% 菲律宾、马来、印尼农用表面活性剂系列品名所属类别性质性能/应用TERSPERSE 4894 阴离子和非离子混合物通用型分散—润湿剂通用型分散—润湿剂TERSPERSE 2500 聚羧酸盐类高性能分散剂高性能分散剂TERMUL 5030 阴/阳离子混合物高性能乳化剂高性能乳化剂TERMUL 1284 乙氧基蓖麻油高性能乳化剂高性能乳化剂TERMUL 1283 乙氧基化蓖麻油高性能乳化剂高性能乳化剂TERIC 200 烷基酚烷氧基化合物高性能乳化剂高性能乳化剂TERSPERSE 2100 萘磺酸甲醛缩合物助悬浮剂助悬浮剂TERWET 1004 阴离子高性能润湿剂高性能润湿剂TESPERSE 2700 聚羧酸盐类高性能分散剂高性能分散剂TERMUL 3404 阴/阳离子混合物高性能乳化剂—稳定性好高性能乳化剂—稳定性好TERMUL 3403 阴/阳离子混合物高性能乳化剂—稳定性好乳油TERSPERSE 95/S 阴离子润湿剂水分散粒剂和可湿粉TERSPERSE 920 萘磺酸甲醛缩合物分散剂可湿粉TERWET 3780 脂肪族胺乙氧基化物（牛脂胺）增效剂草甘瞵水剂德国巴斯夫工业/公用设施清洗剂用原料产品系列产品名化学名称规格/状态性能/应用Mpiphos DF 高单酯异辛基磷酸酯润湿、乳化、增溶剂Teri 167,168,169 聚醚型非离子低泡的洗涤剂、润湿剂Empicol 0585/A 2-乙基己基硫酸钠去除顽固油污的耐强碱强力渗透剂Lutensol A 3N C12C14天然醇乙氧基化合物＋3EO 洗涤剂和洗衣粉的标准表面活性剂原料Lutensol A 4N ＋4EOLutensol A 7N ＋7EOLutensol A79N ＋7EO 90%Lutensol A 8 ＋8EO 90%Lutensol AO 3 C13C15羰基醇乙氧基化合物＋3EO 洗涤剂和洗衣粉的标准表面活性剂原料Lutensol AO 4 ＋4EOLutensol AO 5 ＋5EOLutensol AO 7 ＋7EOLutensol AO 79 ＋7EO 90%Lutensol AO 8 ＋8EOLutensol AO 89 ＋8EO 90%Lutensol AO10 ＋10EOLutensol AO 109 ＋10EO 90%Lutensol AO 11 ＋11EOLutensol AO 30 ＋30EOLutensol AO 3109 90%Lutensol AT 11 C16C18脂肪醇乙氧基化合物＋11EO 〖由于烷基酚醚较高的生物毒性，潮流趋势是使用其替代品。
台湾晶焱科技(Amazing)ESD产品介绍PPT
♦AZC: AZC002-02N AZC002-04S AZC015-04C AZC015-04F AZC015-04S AZC099-04S AZC099-04SC AZC199-02S AZC199-04C AZC199-04S AZC199-04SC AZC299-02R AZC299-02S AZC399-04C AZC399-04S
Amazing TVS Arrays
♦AZ1: AZ1013-02N AZ1013-04S AZ1015-02N AZ1015-02S AZ1015-04S AZ1045-02J AZ1045-04F AZ1045-04QU AZ1045-04SU AZ1065-06F AZ1065-06Q AZ1115-02S
10
Amazing for YOU
Amazing IC Available Package Type
SOT23-3L (S)
(l x w x t) in mm
2.92x1.3x1
SOT23-5L (S)
(l x w x t) in mm
2.92x1.6x1.1
SOT23-6L (S)
(l x w x t) in mm
4.1x2.0x0.5
DFN2525P10E (F)
(l x w x t) in mm
2.5x2.5x0.55
DFN0603P2Y (F)
(l x w x t) in mm
0.6x0.3x0.3
FBP-02C (J)
(l x w x t) in mm
1.0x0.6x0.5
FBP-03E (J)
(l x w x t) in mm
2.92x1.6x1.1
SOT143-4 (N)
【2017年整理】0201超小封装ESD保护器件
0201封装的超小型ESD保护器件上海英联电子科技有限公司徐宁杨永华一、前言ESD被认为是电子产品质量最大的潜在杀手，影响产品的可靠性，静电防护也就成为电子产品质量控制的一项重要内容。
最有效的ESD保护方法是设备的连接器或端口处放置外部保护元件。
0201尺寸的硅基ESD器件比上一代0402型的器件大约缩小了70%，能够为手机、MP3播放器、PDA和数码相机等便携式电子产品提供保护和提高其可靠性。
上海英联电子推出的UM5051/5052是一款低容值（12pF）的ESD保护器件，实际大小仅为0.6mm x 0.3mm x 0.3mm，为设计师们在空间受限的应用中提供了灵活性。
双向保护消除了在PCB板上安装时的方向限制，而且也不会损失负电平信号。
二、UM5051/5052的重要参数英联的UM5051、UM5052具有低漏电流、低容值、低钳位电压等特点，DFN的封装可以有效的降低抛料率，降低成本，增加贴片效率。
0201的超小封装，其ESD抗冲击性能达到了IEC 61000-4-2 (ESD) ±30kV (空气)和±25kV(接触)的标准。
主要参数如表1所示：表1 特性参数表为方便理解参数，图1为单向ESD保护管的特性曲线图。
图 1 单向ESD保护管特性曲线图图 2 ESD放电波形图1、击穿电压VBR (Reverse Breakdown Voltage): 在指定测试电流下ESD保护管发生雪崩击穿时的电压，它是ESD保护管最小的击穿电压。
为了满足IEC61000-4-2标准，ESD保护管必须达到可以处理最小8kV(接触)和15kV(空气)的冲击，有的半导体生产厂商在自己的产品上使用了更高的抗冲击标准。
上海英联电子的UM5051、UM5052，达到了IEC 61000-4-2 (ESD) ±30kV (空气)和±25kV(接触)的标准。
2、反向关断电压VRWM(Reverse Peak Working Voltage)和反向漏电流I D (Reverse LeakageCurrent)：指 ESD保护管最大连续工作的直流或脉冲电压。