1F--BC847B--PNP

Permissible pulse load Ptotmax / PtotDC = f (tp)
12 BC 846...850
CCB0 pF (CEB0 )
10
EHP00361
8 C EB
6
4 C CB
2
0 10 -1
5 10 0
V 101 VCB0 (VEB0)
Transition frequency fT = f (IC) VCE = 5V
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VBEsat
-
700
-
-
900
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
VBE(ON) 580 660 700
-
-
770
1) Pulse test: t ≤=300µs, D = 2%
3
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
h parameter he = f (VCE) normalized IC = 2mA
10 2 he 5
h 11e 10 1
5 h 12e
EHP00368
VCE = 5 V
10 0 h 21e 5 h 22e
10 -1 10 -1
5 10 0
Noise figure F = f (VCE)
IC = 0.2mA, RS = 2k, f = 1kHz
-
-
200
-
-
330
-
-
600
-
Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz
h22e hFE-gr.A hFE-gr.B hFE-gr.C
S
-
18
-
-
30
-
-
60
-
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz
Symbol
VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg
BC846 BC847 BC848 Unit
BC850 BC849
65
45
30 V
80
50
30
80
50
30
6
6
5
100
mA
200
mA
200
200
330
mW
150
°C
-65 ... 150
RthJS
查询BC846A供应商
NPN Silicon AF Transistors
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CES
IC = 10 µA, VBE = 0
BC846
80
-
BC847/850
50
-
V -
BC848/849
V(BR)CEO
IC = 10 mA, IB = 0
BC846
65
-
BC847/850
45
-
V -
BC848/849
30
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IE = 0
BC846
80
-
-
BC847/850
50
-
-
BC848/849
30
-
-
1For calculation of RthJA please refer to Application Note Thermal Resistance
2
Nov-20-2002
BC846...BC850
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BC859, BC860 (PNP)
BC846...BC850
3 2
1 VPS05161
Type BC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C
Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs
1=B B=1 B=1 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-gr.A
hFE-gr.B
hFE-gr.C
10-4
-
1.5
-
-
2
-
-
3
-Hale Waihona Puke Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz
h21e hFE-gr.A hFE-gr.B hFE-gr.C
240
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
10 3 Ptot max Ptot DC
10 2 5
10 1 5
D = tp T
tp T
EHP00362
D=
0 0.005
0.01 0.02 0.05 0.1 0.2 0.5
10 3 MHz fT 5
10 2 5
EHP00363
10 0
10 -6 10 -5 10 -4 10 -3 10 -2 s
0.1 0.2 0.3 0.4 V 0.5 VCEsat
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
10 3 h FE 5 100 C
25 C 102 -50 C
5
EHP00365
10 2 Ι C mA
10 1 5
100 C 25 C -50 C
mA 10 1 ΙC
2.0 he
1.5
1.0
0.5
EHP00369
Ι C = 2 mA h 21 e h 11 e
h 12 e h 22 e
0
0
10
20
Noise figure F = f (f)
IC = 0.2mA, VCE = 5V, RS = 2k
V 30 VCE
20 BC 846...850 F dB
10 0
tp
10 1 10 -1
5
5 10 0
5 10 1
mA 10 2 ΙC
Nov-20-2002
BC846...BC850
Collector cutoff current ICBO = f (TA) VCB = 30V
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20
10 4 nA Ι CB0
10 3 5
10 2 5
10 1 5
EHP00415
max typ
10 2 mA ΙC
10 1 5
10 0 5
100 C 25 C
-50 C
EHP00367
10 0 0
50
100 ˚C 150
TA
DC current gain hFE = f (IC) VCE = 5V
10 -1 0
110 180 220 200 290 450 420 520 800