BAP51-04W,115;中文规格书,Datasheet资料

General purpose PIN diode
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BAP51-04W
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
BAP51-04W
TYP.
MAX.
UNIT
0.95 − − 0.4 0.3 0.2 5.5 3.6 1.5 550
1.1 − 100 − 0.55 0.35 9 6.5 2.5 −
V V nA pF pF pF Ω Ω Ω ns
LS Note
series inductance
−
1.6
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 250 UNIT K/W
handbook, halfpage |S | 2
0
21 (dB) − 0.5
handbook, halfpage s 2
0
MLD509
21 (dB) −10
(1)
(2)
(3)
−1
−20
−1.5
−30
−2
−40
− 2.5 0.5
(1) I F = 10 mA. (2) I F = 1 mA (3) I F = 0.5 mA
2002 Feb 19
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Philips Semiconductors
Preliminary specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF VR IR Cd forward voltage reverse voltage reverse current diode capacitance IF = 50 mA IR = 10 µA VR = 50 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA IF = 10 mA; f = 100 MHz − 50 − − − − − − − − PARAMETER CONDITIONS MIN.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
2002 Feb 19
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Philips Semiconductors
Preliminary specification
General purpose PIN diode
GRAPHICAL DATA
BAP51-04W
102 handbook, halfpage rD (Ω) 10
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2
handbook, halfpage
BAP51-04W
PINNING PIN 1 2 3
3
DESCRIPTION anode cathode common connection
3Hale Waihona Puke • General RF applications.
1 2
DESCRIPTION Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL .
Fig.5
Isolation (|s21|2) of the diode as a function of frequency; typical values.
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Philips Semiconductors
Preliminary specification
Fig.2
Forward resistance as a function of forward current; typical values.
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
MGS659
General purpose PIN diode
PACKAGE OUTLINE
BAP51-04W
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v M A
3
Q
A
A1 c
1
e1 e bp
2
w M B Lp detail X
0
1 scale
2 mm
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP51-04W General purpose PIN diode
Preliminary specification 2002 Feb 19
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Philips Semiconductors
1 Top view
Marking code: W6-
2
MAM391
Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR IF Ptot Tstg Tj continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C − − − −65 −65 50 50 240 +150 +150 V mA mW °C °C PARAMETER CONDITIONS MIN. MAX. UNIT
Preliminary specification
General purpose PIN diode
FEATURES • Two elements in series configuration in a small SMD plastic package • Low diode capacitance • Low diode forward resistance. APPLICATIONS
MLD507
handbook, halfpage
500 Cd
MLD508
(fF) 400
300
200 1 100
10−1 10−1
1
10
IF (mA)
102
0 0 4 8 12 16 VR (V) 20
f = 100 MHz; T j = 25 °C.
f = 100 MHz; T j = 25 °C.
1
1.5
2
2.5 f (GHz)
3
−50 0.5
1
1.5
2
2.5
f (GHz)
3
Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. T amb = 25 °C.
OUTLINE VERSION SOT323
REFERENCES IEC JEDEC EIAJ SC-70
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
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Philips Semiconductors
Preliminary specification
Diode zero biased and inserted in series with a 50 Ω stripline circuit. T amb = 25 °C.
Fig.4
Insertion loss ( |s21|2) of the diode as a function of frequency; typical values.