MJE803G;MJE800G;MJE700G;MJE802G;MJE703G;中文规格书,Datasheet资料

80
−
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0)
MJE700, MJE800 MJE702, MJE703, MJE802, MJE803
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100_C)
For NPN test circuit, reverse diode, polarities and input pulses.
SCOPE
Figure 2. Switching Times Test Circuit
t, TIME ( μ s)
4.0
VCC = 30 V IB1 = IB2
ts
IC/IB = 250 TJ = 25°C
Features
• High DC Current Gain − hFE = 2000 (Typ) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Resistors to
Limit Leakage − Multiplication

4.0 AMPERE DARLINGTON POWER
TRANSISTORS COMPLEMENTARY SILICON
40 WATT 50 WATT
NPN COLLECTOR 2
PNP COLLECTOR 2
BASE 3
BASE 3
EMITTER 1
MJE800 MJE802 MJE803
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
6.25
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
• Choice of Packages − MJE700 and MJE800 Series • Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol ValueU源自itCollector−Emitter Voltage
VCEO
Vdc
PULSE TRAIN SHOWN
READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1 t2
DUTY CYCLE, D = t1/t2
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms)
Figure 4. Thermal Response (MJE700, 800 Series)
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2 0.1
0.1
0.05
0.07 0.01 0.05
0.03 SINGLE PULSE 0.02
0.01 0.01 0.02 0.03 0.05
qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER
IC
Base Current
IB
Total Power Dissipation @ TC = 25_C
PD
Derate above 25_C
5.0
Vdc
4.0
Adc
0.1
Adc
40
W
0.32
mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –55 to +150 _C
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN)
Plastic Darlington Complementary Silicon Power Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
7.0 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE700 Series
EMITTER 1
MJE700 MJE702 MJE703
321
TO−225 CASE 77 STYLE 1
MARKING DIAGRAM
YWW JEx0yG
Y
= Year
WW = Work Week
JEx0y = Device Code
x = 7 or 8
y = 0, 2, or 3
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
May, 2011 − Rev. 11
/
Publication Order Number: MJE700/D
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic
hfe
1.0
−
−
PD, POWER DISSIPATION (WATTS)
50
40 TO-220AB
30
TO-126 20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
/
2
VBE(on)
Vdc
−
2.5
−
2.5
−
3.0
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MJE700, MJE702, MJE800, MJE802
750
−
(IC = 2.0 Adc, VCE = 3.0 Vdc)
MJE703, MJE803
750
−
(IC = 4.0 Adc, VCE = 3.0 Vdc)
All devices
100
−
Collector−Emitter Saturation Voltage (Note 1)
3.0
2.0
dc
3.0
2.0
dc
100 ms
1.0 0.7 0.5
0.3 0.2
0.1 5.0
TJ = 150°C
BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED
MJE702, 703 MJE700
VCC - 30 V
RC TUT
V2
RB
APPROX
+ 8.0 V
0
51 D1
≈ 6.0 k ≈ 150
V1 APPROX
-12 V
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
25 ms
+ 4.0 V
For td and tr, D1 id disconnected and V2 = 0, RB and RC are varied to obtain desired test currents.
VCE(sat)