SIHFR024中文资料

Power MOSFETIRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixFEATURES•Dynamic dV/dt Rating•Surface Mount (IRFR024/SiHFR024)•Straight Lead (IRFU024/SiHFU024)•Available in Tape and Reel •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiH FU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.Notea.See device orientation.PRODUCT SUMMARYV DS (V)60R DS(on) (Ω)V GS = 10 V 0.10Q g (Max.) (nC)25Q gs (nC) 5.8Q gd (nC)11ConfigurationSingleORDERING INFORMATIONPackage DPAK (TO-252)DPAK (TO-252)DPAK (TO-252)IPAK (TO-251)Lead (Pb)-free IRFR024PbF IRFR024TRPbF a -IRFU024PbF SiHFR024-E3SiHFR024T-E3a -SiHFU024-E3SnPbIRFR024IRFR024TR a IRFR024TRL a IRFU024SiHFR024SiHFR024T aSiHFR024TL aSiHFU024ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARA ETER SY M BOL LI M IT UNIT Drain-Source Voltage V DS60VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D14A T C = 100 °C9.0Pulsed Drain Current a I DM 56Linear Derating Factor0.33W/°C Linear Derating Factor (PCB Mount)e 0.020Single Pulse Avalanche Energy b E AS 91mJ Maximum Power DissipationT C = 25 °C P D42WMaximum Power Dissipation (PCB Mount)e T A = 25 °C2.5Peak Diode Recovery dV/dt cdV/dt 5.5V/ns* Pb containing terminations are not RoHS compliant, exemptions may applyIRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 25 V, starting T J = 25 °C, L = 541 µH, R G = 25 Ω, I AS = 14 A (see fig. 12).c.I SD ≤ 17 A, dI/dt ≤ 110 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.e.When mounted on 1" square PCB (FR-4 or G-10 material).Notea.When mounted on 1" square PCB (FR-4 or G-10 material).Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°CSoldering Recommendations (Peak Temperature)for 10 s260dTHERMAL RESISTANCE RATINGSPARA ETER SYBOL IN.TYP.AX.UNITMaximum Junction-to-AmbientR thJA--110°C/W Maximum Junction-to-Ambient (PCB Mount)aR thJA--50Maximum Junction-to-Case (Drain)R thJC-- 3.0ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARA ETER SY BOL LI IT UNIT MM MIRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.TYPICAL CHARACTERISTICSFig. 2 - Typical Output Characteristics, T = 150 °C Fig. 4 - Normalized On-Resistance vs. TemperatureM M MIRFR024, IRFU024, SiHFR024, SiHFU024 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRFR024, IRFU024, SiHFR024, SiHFU024Vishay SiliconixFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRFR024, IRFU024, SiHFR024, SiHFU024Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91264.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。