M2904-S08-R中文资料
LTC2904资料
sn29045 29045fsleakage current allowable from the pin to either GND or V1is 10µA.In margining applications, all the 3-state input pins can be driven using a tri-state buffer. Note however the low and high output of the tri-state buffer has to satisfy the V IL and V IH of the 3-state pin listed in the Electrical Characteristics Table. Moreover, when the tri-state buffer is in the high impedance state, the maximum leakage current allowed from the pin to either GND or V1 is 10µA.Monitor ProgrammingConnecting S1 and S2 to GND, V1 or leaving them open selects the LTC2904/LTC2905 input voltage combina-tions. Table 1 shows the nine possible combinations of nominal input voltages and their corresponding S1, S2connections.Table 1. Voltage Threshold ProgrammingV1V2S1S25.0 3.3V1V13.3 2.5Open GND 3.3 1.8V1Open 3.3 1.5Open V13.3 1.2Open Open 2.5 1.8GND GND 2.5 1.5GND Open 2.5 1.2GND V12.51.0V1GNDNote: Open = open circuit or driven by a three state buffer in high impedance state with leakage current less than 10µA.Tolerance ProgrammingThe three-state input pin, TOL programs the common supply tolerance for both V1 and V2 input voltages (5%,7.5% or 10%). The larger the tolerance the lower the trip threshold. Table 2 shows the tolerances selection corre-sponding to a particular connection at the TOL pin.Supply MonitoringThe LTC2904/LTC2905 are low power, high accuracy dual supply monitors with a common reset output and select-able thresholds. Reset delay is set to a nominal of 200ms for the LTC2904 and is adjustable using an external capacitor for the LTC2905.The two three-state input pins (S1 and S2) select one of nine possible threshold voltage combinations. Another three-state input pin sets the supply tolerance (5%, 7.5%or 10%). Both input voltages (V1 and V2) must be above predetermined thresholds for the reset not to be invoked.The LTC2904/LTC2905 assert the reset outputs during power-up, power-down and brownout conditions on either of the voltage inputs.Power-UpThe greater of V1, V2 is the internal supply voltage (V CC ).V CC powers the drive circuits for the RST pin. Therefore as soon as V1 or V2 reaches 1V during power-up, the RST output asserts low.V CC also powers the drive circuits for the RST pin in the LTC2904. Therefore, RST weakly pulls high when V1 or V2reaches at least 1V.Threshold programming is complete when V1 reaches at least 2.17V. After programming, if either V1 or V2 falls below its programmed threshold, RST asserts low (RST weakly pulls high) as long as V CC is at least 1V.Once V1 and V2 rise above their thresholds, an internal timer is started. After the programmed delay time, RST weakly pulls high (RST asserts low).Power-DownOn power-down, once either V1 or V2 inputs drops below its threshold, RST asserts logic low and RST weakly pulls high. V CC of at least 1V guarantees a logic low of 0.4V at RST.Programming PinsThe three 3-state input pins: S1, S2 and TOL should be connected to GND, V1 or left unconnected during normal operation. Note that when left unconnected, the maximumAPPLICATIO S I FOR ATIOW UUU Table 2. Tolerance ProgrammingTolerance TOL 5%V17.5%Open 10%GNDThreshold AccuracyReset threshold accuracy is of the utmost importance in a supply sensitive system. Ideally such a system should not reset while supply voltages are within a specified margin below the rated nominal level. Both of the LTC2904/LTC2905 inputs have the same relative threshold accu-racy. The specification for LTC2904/LTC2905 is ±1.5% of the programmed nominal input voltage (over the full operating temperature range).F or example, when the LTC2904/LTC2905 are programmed to handle a 5V input with 10% tolerance (S1 = S2 = V1 and TOL = GND, refer to Table 1 and Table 2), it does not issue a reset command when V1 is above 4.5V. The typical 10%trip threshold is at 11.5% below the nominal input voltage level. Therefore, the typical trip threshold for the 5V input is 4.425V. With ±1.5% accuracy, the trip threshold range is 4.425V ±75mV over temperature (i.e. 10% to 13%below 5V). This implies that the monitored system must operate reliably down to 4.35V over temperature.The same system using a supervisor with only ±2.5%accuracy needs to work reliably down to 4.25V (4.375V ±125mV) or 15% below 5V, requiring the monitored system to work over a much wider operating voltage range.In any supervisory application, supply noise riding on the monitored DC voltage can cause spurious resets, particu-larly when the monitored voltage is near the reset thresh-old. A less desirable but common solution to this problem is to introduce hysteresis around the nominal threshold.Notice however, this hysteresis introduces an error term in the threshold accuracy. Therefore, a ±2.5% accurate monitor with ±1.0% hysteresis is equivalent to a ±3.5%monitor with no hysteresis.The LTC2904/LTC2905 takes a different approach to solve this problem of supply noise causing spurious reset. The first line of defense against this spurious reset is a first order low pass filter at the output of the comparator. Thus,the comparator output goes through a form of integration before triggering the output logic. Therefore, any kind oftransient at the input of the comparator needs to be of sufficient magnitude and duration before it can trigger a change in the output logic.The second line of defense is the programmed delay time t RST (200ms for LTC2904 and using an external capacitor for LTC2905). This delay will eliminate the effect of any supply noise whose frequency is above 1/t RST on the RST and RST output.When either V1 or V2 drops below its programmed threshold, the RST pin asserts low (RST weakly pulls high). Then when the supply recovers above the pro-grammed threshold, the reset-pulse-generator timer starts counting.If the supply remains above the programmed threshold when the timer finishes counting, the RST pin weakly pulls high (RST asserts low). However, if the supply falls below the programmed threshold any time during the period when the timer is still counting, the timer resets and it starts fresh when the supply next rises above the pro-grammed threshold.Note that this second line of defense is only effective for a rising supply and does not affect the sensitivity of the system to a falling supply. Therefore, the first line of defense that works for both cases of rising and falling is necessary. These two approaches prevent spurious reset caused by supply noise without sacrificing the threshold accuracy.Selecting the Reset Timing CapacitorThe reset time-out period for LTC2905 is adjustable in order to accommodate a variety of microprocessor appli-cations. Connecting a capacitor, C TMR , between the TMR pin and ground sets the reset time-out period, t RST . The following formula determines the value of capacitor needed for a particular reset time-out period:C TMR = t RST • 110 • 10–9 [F/s]For example, using a standard capacitor value of 22nF would give a 22000/110 = 200ms delay.APPLICATIO S I FOR ATIOW UUU11sn29045 29045fsFigure 1 shows the desired delay time as a function of the value of the timer capacitor that should be used:As noted in the Power-Up and Power-Down sections the circuits that drive RST and RST are powered by V CC .During fault condition, V CC of at least 1V guarantees a maximum V OL = 0.4V at RST. However, at V CC = 1V the weak pull-up current on RST is barely turned on. There-fore, an external pull-up resistor of no more than 100k is recommended on the RST pin if the state and pull-up strength of the RST pin is crucial at very low V CC .Note however, by adding an external pull-up resistor, the pull-up strength on the RST pin is increased. Therefore, if it is connected in a wired-OR connection, the pull-down strength of any single device needs to accommodate this additional pull-up strength.Output Rise and Fall Time EstimationThe RST and RST outputs have strong pull-down capabil-ity. The following formula estimates the output fall time (90% to 10%) for a particular external load capacitance (C LOAD ):t FALL ≈ 2.2 • R PD • C LOADwhere R PD is the on-resistance of the internal pull-down transistor estimated to be typically 40Ω at room tempera-ture (25°C) and C LOAD is the external load capacitance on the pin. Assuming a 150pF load capacitance, the fall time is about 13ns.The rise time, on the RST and RST pins is limited by weak internal pull-up current sources to V CC . The following formula estimates the output rise time (10% to 90%) at the RST and RST pins:t RISE ≈ 2.2 R PU • C LOADwhere R PU is the on-resistance of the pull-up transistor.Notice that this pull-up transistor is modeled as a 6µA current source in the Block Diagram as a typical represen-tation.The on-resistance as a function of the V CC = Max (V1, V2)voltage (for V CC > 1V) at room temperature is estimated asFigure 1. Reset Time-Out Period vs CapacitanceLeaving the TMR pin open with no external capacitor generates a reset time-out of approximately 200µs. For long reset time-out, the only limitation is the availability of large value capacitor with low leakage. The TMR capacitor will never charge if the leakage current exceeds the mini-mum TMR charging current of 2.1µA (typical).RST and RST Output CharacteristicsThe DC characteristics of the RST and RST pull-up and pull-down strength are shown in the Typical Performance Characteristics section. Both RST and RST have a weak internal pull-up to V CC = Max (V1, V2) and a strong pull-down to ground.The weak pull-up and strong pull-down arrangement allow these two pins to have open-drain behavior while possess-ing several other beneficial characteristics.The weak pull-ups eliminate the need for external pull-up resistors when the rise time on these pins is not critical. On the other hand, the open-drain RST configuration allows for wired-OR connections and can be useful when more than one signal needs to pull down on the RST line.APPLICATIO S I FOR ATIOW UUU C TMR (FARAD)10p100p1n 10n100n 1µR E S E T T I M E O U T P E R I O D , t R S T (m s )29045 F011000010001001010.112131415Information furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.16Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 ● F AX: (408) 434-0507 ● © LINEAR TECHNOLOGY CORPORA TION 2003。
SD2904;中文规格书,Datasheet资料
SD2904RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETss GOLD METALLIZATIONs COMMON SOURCE CONFIGURATION s 2 - 500 MHz s 30 WATTS s 28 VOLTSs 9.5 dB MIN. AT 400 MHzs CLASS A OR AB OPERATIONsEXCELLENT THERMAL STABILITYDESCRIPTION The SD2904 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHzNovember 1999ABSOLUTE MAXIMUM RATINGS (T case = 25 o C)THERMAL DATA®1/8SD2904ELECTRICAL SPECIFICATION (T case = 25 o C)STATICREF. 1021310H DYNAMICIMPEDANCE DATACapacitance vs Drain-Source VoltageDrain Current vs Gate VoltageMaximum Thermal Resistance vs Case TemperatureGate-Source Voltages vs Case TemperatureTYPICAL PERFORMANCESD2904Output Power vs Input PowerOutput Power vs Input PowerOutput Power vs Voltage SupplyOutput Power vs Gate VoltagePower Gain vs Output PowerEfficiency vs Output PowerTYPICAL PERFORMANCE SD2904SD2904 400 MHz Test Circuit Schematic400 MHz Test Circuit Component Part ListSD2904400MHz Test Circuit PhotomasterProduction Test FixtureSD2904Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 1999 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A..SD2904分销商库存信息: STMSD2904。
富士豪低温螺杆目录
Frascold于75年前创立并展望未来。
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Refrigeration Twin Screw Compressors 冷冻双螺杆压缩机
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Characteristics The accurate design, the entirely made in Italy production, the methodical total quality controls, guarantee excellent performance and reliability. The wide range of models is divided in three distinct versions due to their ideal optimization for different applications: • RTSL / NRL models designed for low evaporating
ERSATZTEILKATALOG 产品 spare parts 目录说明书
5EUROTEC GROUP SERVICE - Spare parts distribution11004066REB004066COVER - 50/50312417041REB417041NUT, DOOR BUFFER13307003REB307003NUT-LEDGE, FOR ROD14304021REB304021ROD, DOOR GUIDE 50/500/453/463/50315325036REB325036PIN, DOOR HINGE 5016311019REB311019HINGE, DOOR 45/46/50..17325066REB325066LOCK PIN BETA 246/25018999108REB999108GRUPPO CALAMITA PORTA 453/463/500/50319022095REB022095PANEL, REAR CPL 50/503110480058REB480058CAP, RUBBER D.17111437081REB437081GASKET, DOOR - 50/503112033301REB033301BRACKET, FIXED FOR DOOR GASKET 50/503113994012DWS30GRUPPO SERRATURA EB/F 22/44114029590DOOR115015064RACK SLIDE SX.116015063RACK SLIDE DX.117480057REB480057CAP, RUBBER D.14118408006REB408006STUD, FOR TANK FILTER - GREY119459004REB459004PIPEHOLDER, RUBBER DI.34120459006REB459006FAIRLEAD, Di9/De16 22121030080REB030080PROTECTION, LOW. SOCLE 50/503122461019REB461019FOOT, ADJUST. D30 M8123012326FRONT PANEL125025444CONTROL PANEL21214104PLASTIC PROTECTION22211013FLAT WIRE23417119NUT, M3 PLASTIC WHITE24419036SPACER, M325227084PUSH BUTTONS ASSEMBLY26026073POLYESTERE27224003REB224003PRESSURE SWITCH - 55/3528224010PRESSURE SWITCH, DRAIN PUMP SAFETY 110/75 29035031REB035031UNION, Y-TYPE, PRESSURE SWITCH 760210423011REB423011CLAMP, SPRING-TYPE211143013REB143013PIPE, PVC GREEN 4X7212220011REB220011* TERMINAL BOARD, 5-POLES + EARTH FV.122213459005REB459005CABLE CLAMPS, STEAB art.5024214H.374339-2CABLE H07RN-F 5X2.5X3.0MT21580871MAGNETIC DOOR SWITCH216230086REB230086RESISTANCE, TANK 2700W/220V-3200W/240V 22/44/50 217456015REB456015O-ring 112 9.92X2.62218463007REB463007LUG, RESISTANCE PROTECTION219999160GRUPPO BULBO SONDA VASCA220231016TEMP. PROBE221230111RESIST.B.4900W/230-400V222456002REB456002O-ring 48x6,222369870BOILER HEATING ELEMENT PROTECTION22469871PROBE HOLDER225228010FUSE226999298SCHEDA GET50(2 DISPLAY)235229040RELAY 62.83.8.230.0300237214090EL.PROTECTION,TRANSP.453238228004FUSE, 5X20 4A FAST239210010FUSE-HODER240210011PLATE241209021PERISTALTIC DISPENSER (NBR-3)242468151DZR150NT UNION, EXTRA DET. CPL NM * WELDED243143194REB143194PIPE 4x6 CRISTAL, TRANSP.244143219REB143219TUBE, SANTOPRENE 6X10 FITTINGS+METAL RINGS 245121075REB121075FILTER, SUCT.INOX (775239-001)251236047REB236047THERM.,CONT. /S.95ø+/-3ø31441009REB441009INSERT, SEAL D10 COLL.S621-32437014REB437014GASKET, LOWER MANIFOLD S85033143174REB143174PIPE, WATER LOW.COLL. RINSE 5034111030NEUTRAL LOWER MANIFOLD ASS. E50NM+PLUG 35035064BRACKET, DRAIN PUMP FOR MANIFOLD 50NM36127026REB127026SLEEVE, PUMP DELIVERY 22/50037143240PIPE, H-)COND.UPPER38437041REB437041GASKET 3/4 GAS LOAD39929169RAT32TUBO DI CARICO DEL TERMOPLASTICO310240011REB240011LOADING S.VALVE 1-WAY311104060BOILER312143005SPG10PIPE, PRESSURE SWITCH TP 5x11 (CASER/15/NL C4N) 313209025RINSE AID DISPENSING PUMP314121017FILTER, RINSE-AID SUCT.315H.775601PIPE 4x6 CRISTAL BLUE PVC316142053REB142053OVERFLOW, DRAIN 50/503 NM317121078REB121078FILTER, DRAIN PUMP 463/503318303019REB303019RING, ELASTIC FOR DRAIN PUMP FILTER 503 319136023REB136023DRAIN, BENT 50/503320437063CGG42GASKET, DRAIN 50321417081CDP2NUT, PLASTIC 1'- 1/4322127050REB127050SLEEVE, RIGIDO ASP.P.S. 500/503323127044REB127044SLEEVE, SUCT.DRAIN PUMP 353/403324468152REB468152UNION, DRAIN CLEAN.3325127037REB127037SLEEVE, DRAIN CLEAN.3326144003REB144003RELIEF VALVE, DRAIN PUMP327423024REB423024CLAMP, PLAST.FOR DRAIN PUMP PIPE CLAMP. 328143178REB143178PIPE, DRAIN - 50329130105REB130105DRAIN PUMP (50/503/460/BD18)330130150DRAIN PUMP (50/503/460/BD18) 60HZ331143189REB143189TUBE, DRAIN SFIATO DVGW CLEAN.3332144011REB144011CHECK VALVE (EB)333143004REB143004PIPE, PRESSURE SWITCH TP 10X17 (CASER/15NL C4N) 41984005REB984005GRUPPO CAMPANA PRESSOST.35/4042423011REB423011CLAMP, SPRING-TYPE43468029REB468029UNION, PRESSURE SWITCH BELL44456020REB456020O-ring 3050 R49545437019REB437019GASKET, CAMP. PRESS. V.M.46107005REB107005PRESSURE SWITCH BELL EB 35/4047142052REB142052OVERFLOW 50/503 NM48136023REB136023DRAIN, BENT 50/50349437063CGG42GASKET, DRAIN 50410417081CDP2NUT, PLASTIC 1'- 1/4413478059SUPPORT, FILTER GREY+EXTENSION414437015REB437015GASKET, PUMP FILTER S651-415127041REB127041SLEEVE, SUCTION 463/503416929169RAT32TUBO DI CARICO DEL TERMOPLASTICO417437041REB437041GASKET 3/4 GAS LOAD418240016DEV3S16LOADING S.VALVE 1-WAY 3/4 230V PART.16L 419143246PIPE, -)SOFTENER421999288GRUPPO VALVOLA DEVIATR.CON RIDUTTORE 422143265NOT IN PRICE-LIST423143004REB143004PIPE, PRESSURE SWITCH TP 10X17 (CASER/15NL C4N) 424117007WATER SOFTNER425406998REB406998SALT CONTAINER NM426480005REB480005SALT CONTAINER SCREW CAP427456052REB456052O-ring 144428429011REB429011RING NUT, SALT CONT.429437034REB437034GASKET, D68D81S3 RUBBER51303029REB303029RING, DRIPPING 46/50..52437064REB437064GASKET, MANIFOLD, CENTR.UPP.5053143240PIPE, H-)COND.UPPER54115113PIPE, WASHINGEST.PL.+ SLEV.+115111 SP405 55127036REB127036SLEEVE, LOW.WASH.COND. 50/f56121139FILTER57121138FITER58408006REB408006STUD, FOR TANK FILTER - GREY61327006REB327006PIN, LOW.WASH/RINSE 21/45362990108GRUPPO LAV.RISC.SUPER.50/UNIVERSALE63106007RINSE ARM, RH S651-85064106006REB106006WASH.ARM,LH+ SCREW S651-850-50365106005RINSE ARM, LH S651-85066140007REB140007SPRAY S621-3-31-67429006REB429006RING NUT, RINSE S621-3-31-368429007REB429007RING NUT, WASHING S621-3-31-369140008REB140008SPRAY S621-3-31-610106008REB106008WASH.ARM, RH+ SCREW S651-850-503611447128REB447128KNOB, FIX, WASH. GREY612454002REB454002PAWL 21/31613437100PACKING614129039REB129039WASH-RINSE-ARM ASSB., LOWER 353/403RAL7012 61580959RINSE ASSEMBLY616926132CAP, PLASTIC FOR WASH. ARM (DWT312)61780623RING 22X9,5X161880697NUT61969632ARM BODY620456072O-RING 6X2621140025SPRAY D.2,562280345NEW WASH BOSS ASSEMBLY623303032RING, INOX WASH. SEAL X5624417111BUSHING, WASH-ARM X5625308031RING NUT, WASH.BUSH X5626325094WASH COMB PIN SHAFT627199058DISC, WATER FLOW REDUCER PLAST.E55628115075REB115075CENTR.PIPELINE - LOWER 50 (H=108)629437014REB437014GASKET, LOWER MANIFOLD S850633456060O-ring 2025(CGR2025)634456019REB456019O-ring 203763580700PERNO RISCIACQUO D14 M10X171130109REB130109PUMP HP 0.80 220/240-50 - 50/50072130119PUMP B237 HP 0.80 220/60 5073314001REB314001BEARING 6201/2Z74206003CONDENSER - 12.5 mF76315017REB315017FLANGE, W/COVERING DUCT B23777437049REB437049GASKET, PUMP 227778141002REB141002SEAL, MECH., REVOLVING D 1279124065WASH PUMP IMPELLER FOR B237 FOR DISH- WASHER 711116021REB116021PUMP SHELL, B237712315022REB315022FLANGE, PUMP LGB T-173/174713456031REB456031O-ring T30-1297 D.2714141007REB141007SEAL, MECH..D.26x13x5,5 BR.715124031RAG291IMPELLER, CLOSED 50HZ D.104 T170716124053IMPELLER, CLOSED 60HZ T173-175717116019REB116019PUMP SHELL, 50 T-173。
2904_中文资料
PACKAGING INFORMATION Orderable DeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)LM2904AVQDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904AVQPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904QDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904QPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM LM2904VQDRQ1ACTIVE SOIC D 82500Pb-Free (RoHS)CU NIPDAU Level-2-250C-1YEAR/Level-1-235C-UNLIM LM2904VQPWRQ1ACTIVE TSSOP PW 82000None CU NIPDAU Level-1-250C-UNLIM (1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -May not be currently available -please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead (Pb-Free).Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM 4-Mar-2005Addendum-Page 1IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. T o minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. 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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetwork Microcontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2005, Texas Instruments Incorporated。
MICROMEGA 高精度过程控制器说明书
CN77000 R300和R500控制器,图片中含RHS-43孔锯, 易于钻圆孔。
有关订购信息, 请参见最后一页。
CN77333-A2 NEMA 12款方形开孔。
CN77533 NEMA 4方形开孔。
图片为实际尺寸。
1⁄16 DIN MICROMEGA ®自动调谐PID温度/过程控制器U 高精度：±0.5°C (0.9°F), 读数的0.03% U品质优秀, 还有5年保修支持 U 通用输入—过程电压/电流、热电偶、RTD U 双4位数字LED 显示屏和指示器, 用于显示输出和报警状态 U 可选RS232或RS485, OMEGA ® 协议U 继电器、SSR 、DC 脉冲、0 ~ 10 V, 以及 0 ~ 20 mA 输出类型 U 斜坡到设定值功能 U 通用电源, 90 ~ 250 Vac 或Vdc U 双输出和双报警功能U 隔离模拟输出或远程设定值可选将方形控制器放置于圆孔中！高精度、高品质MICROMEGA ®控制器在过程控制中提供无与伦比的灵活性。
每台设备均允许用户从10个热电偶类型（J 、K 、T 、E 、R 、S 、B 、C 、N 和JDIN ）、Pt RTD （100、500或1000 Ω, 385或392曲线）或者模拟电压或电流输入中选择输入类型。
电压/电流输入可完全扩展到各工程单位，可选择小数点，是压力、流量或其他过程输入的理想之选。
MICROMEGA ®控制器具有大型双LED 显示屏，采用前面板配置，可选温度/过程输入，并接受90 ～ 250 Vac 或Vdc 通用电源。
提供单和双输入配置，CN77000系列适用于继电器、SSR 、DC 脉冲或模拟电压或电流输出。
单报警是标准配置。
可选项包括第二报警、 RS232、RS485、模拟输出以及远程设定值可选。
“300”系列控制器有许多特色，更大，紧凑型1⁄4 DIN 控制器，1⁄16 DIN 尺寸。
中文四版-SMC样本
20～40
CAT.C04-02A
20～40
CAT.C04-02A
40～100
CAT.C09-03A
32～125
CAT.C05-09B
32～100
CAT.C06-06A
125～300 8～25
CA3T2.C～05-2052B0
20～63 32～100
正确内容
32～100
CAT.C08-04B
12～100
07年8月 06年8月 06年8月 06年8月 06年8月 07年8月
说明:1.中国四版06年1月份正式印刷完成，06年8月份第一次增印，改动10页，07年8月份第二次增印，改动15页, 07年11月第三次增印，改动18页。
2.请注意将将更改信息通知相关客户，订货时予以确认。
执行元件
系列
气缸类型
缸径(mm) 中文样本编号 英文样本编号 日文样本编号 页号
页数 P3.55 P4.25 P4.26
错误内容 可换件型号错误 数值表示错误 型号表示错误、易造成选型错误
P4.34 P4.42
词汇更正、录入错误 型号表示不清、易造成选型错误
P4.64 P4.70
词汇更正、录入错误 追加系列
P4.102 型号表示内容错误
P4.110 型号表示内容错误
P5.09 数值表示错误
标准型气缸
图形符号
CA2系列 ( ～ )
1
1
。
弯
1系列
1
。
。 。
。
型号表示方法
mm
拉杆安装
除A54外 仅A54 BT-04 BT-06 BT-08
参见P.1.357。
正确内容
F
常用全系列场效应管
常用全系列场效应管M OS管型号参数封装资料场效应管分类型号简介封装DIS CRETEMOSFET 2N7000 60V,0.115A TO-92DIS CRETEMOSFET 2N7002 60V,0.2A SOT-23DI SCRET EMOS FETI RF510A 100V,5.6A TO-220D ISCRE TEMO S FETIRF520A 100V,9.2A TO-220DISCR ETEM OS FE T IRF530A 100V,14A TO-220DISC RETEMOS F ET IRF540A 100V,28A T O-220DIS CRETEMOSFET IR F610A200V,3.3A TO-220DI SCRET EMOS FETI RF620A 200V,5A TO-220D ISCRE TEMO S FETIRF630A 200V,9A TO-220DISCR ETEM OS FE T IRF634A 250V,8.1A TO-220DISC RETEMOS F ET IRF640A 200V,18A T O-220DIS CRETEMOSFET IR F644A250V,14A TO-220DI SCRET EMOS FETI RF650A 200V,28A TO-220D ISCRE TEMO S FETIRF654A 250V,21A TO-220DISCR ETEM OS FE T IRF720A 400V,3.3A TO-220DISC RETEMOS F ET IRF730A 400V,5.5A T O-220 DIS CRETEMOSFET IR F740A400V,10A TO-220 DI SCRET EMOS FETI RF750A 400V,15A TO-220 D ISCRE TEMO S FETIRF820A 500V,2.5A TO-220 DISCR ETEM OS FE T IRF830A 500V,4.5A TO-220DISC RETEMOS F ET IRF840A 500V,8AT O-220 DIS CRETEMOSFET IR F9520TO-220DI SCRET EMOS FETI RF9540 TO-220D ISCRE TEMO S FETIRF9610 TO-220DISCR ETEM OS FE T IRF9620 TO-220DISC RETEMOS F ET IRF P150A 100V,43A T O-3PDISC RETEMOS F ET IRF P250A 200V,32A T O-3PDISC RETEMOS F ET IRF P450A 500V,14A T O-3PDISC RETEMOS F ET IRF R024A 60V,15AD-PAKDISC RETEMOS F ET IRF R120A 100V,8.4A D-PAKDISC RETEMOS F ET IRF R214A 250V,2.2A D-PAKDISC RETEMOS F ET IRF R220A 200V,4.6A D-PAKDISC RETEMOS F ET IRF R224A 250V,3.8A D-PAKDISC RETEMOS F ET IRF R310A 400V,1.7A D-PAKDISC RETEMOS F ET IRF R9020TF D-PAKDISC RETEMOS F ET IRF S540A 100V,17A T O-220F DI SCRET EMOS FETI RFS630A 200V,6.5A TO-220F DISCR ETEM OS FE T IRFS634A 250V,5.8A TO-220F DIS CRETEMOSFET IR FS640A 200V,9.8A TO-220F D ISCRE TEMO S FETIRFS644A 250V,7.9A TO-220FDISC RETEMOS F ET IRF S730A 400V,3.9A T O-220F DI SCRET EMOS FETI RFS740A 400V,5.7A TO-220F DISCR ETEM OS FE T IRFS830A 500V,3.1A TO-220F DIS CRETEMOSFET IR FS840A 500V,4.6A TO-220F D ISCRE TEMO S FETIRFS9Z34 -60V,12A TO-220FDISC RETEMOS F ET IRF SZ24A 60V,14AT O-220FDI SCRET EMOS FETI RFSZ34A 60V,20A TO-220FDISCR ETEM OS FE T IRFU110A 100V,4.7A I-PAKDISCR ETEM OS FE T IRFU120A 100V,8.4A I-PAKDISCR ETEM OS FE T IRFU220A 200V,4.6A I-PAKDISCR ETEM OS FE T IRFU230A 200V,7.5A I-PAKDISCR ETEM OS FE T IRFU410A 500V I-PAKDISC RETEMOS F ET IRF U420A 500V,2.3A I-PAKDIS CRETEMOSFET IR FZ20A TO-220D ISCRE TEMO S FETIRFZ24A 60V,17A TO-220DISC RETEMOS F ET IRF Z30 TO-220DI SCRET EMOS FETI RFZ34A 60V,30A TO-220DISCR ETEM OS FE T IRFZ40 T O-220DIS CRETEMOSFET IR FZ44A60V,50A TO-220D ISCRE TEMO S FETIRLS530A 100V,10.7A,Log ic T O-220F DI SCRET EMOS FETI RLSZ14A 60V,8A,Log ic TO-220F D ISCRE TEMO S FETIRLZ24A 60V,17A,L ogic TO-220 D ISCRE TEMO S FETIRLZ44A 60V,50A,L ogic TO-220 D ISCRE TEMO S FETSFP36N03 30V,36A TO-220DISCR ETEM OS FE T SFP65N06 60V,65A TO-220DISC RETEMOS F ET SFP9540 -100V,17A T O-220DIS CRETEMOSFET SF P9634-250V,5A TO-220DI SCRET EMOS FETS FP9644 -250V,8.6A TO-220D ISCRE TEMO S FETSFP9Z34 -60V,18A TO-220DISCR ETEM OS FE T SFR9214 -250V,1.53A D-PAKDISC RETEMOS F ET SFR9224 -250V,2.5A D-PAKDIS CRETEMOSFET SF R9310 -400V,1.5A D-PA KDI SCRET EMOS FETS FS9630 -200V,4.4A TO-220FDISC RETEMOS F ET SFS9634 -250V,3.4A TO-220FD ISCRE TEMO S FETSFU9220 -200V,3.1A I-PAKDISCR ETEM OS FE T SSD2002 25V N/P Du al 8SOPDISC RETEMOS F ET SSD2019 20VP-chDual 8SOP DIS CRETEMOSFET SS D2101 30V N-ch Sing le 8SOP DISCR ETEM OS FE T SSH10N80A 800V,10A TO-3P DISCR ETEM OS FE T SSH10N90A 900V,10A TO-3P DISCR ETEM OS FE T SSH5N90A 900V,5A TO-3P DISCR ETEM OS FE T SSH60N10 TO-3PDISCR ETEM OS FE T SSH6N80A 800V,6A TO-3P DISCR ETEM OS FE T SSH70N10A 100V,70A TO-3P DISCR ETEM OS FE T SSH7N90A 900V,7A TO-3P DISCR ETEM OS FE T SSH9N80A 800V,9A TO-3P DISCR ETEM OS FE T SSP10N60A 600V,9A TO-220DISC RETEMOS F ET SSP1N60A 600V,1AT O-220 DIS CRETEMOSFET SS P2N90A 900V,2A TO-220 DI SCRET EMOS FETS SP35N03 30V,35A TO-220 D ISCRE TEMO S FETSSP3N90A 900V,3A TO-220 DISCR ETEM OS FE T SSP4N60A 600V,4A TO-220DISC RETEMOS F ET SSP4N60A S 600V,4AT O-220 DIS CRETEMOSFET SS P4N90AS 900V,4.5A TO-220 D ISCRE TEMO S FETSSP5N90A 900V,5A TO-220D ISCRE TEMO S FETSSP60N06 60V,60A TO-220D ISCRE TEMO S FETSSP6N60A 600V,6A TO-220D ISCRE TEMO S FETSSP70N10A 100V,55A TO-220 D ISCRE TEMO S FETSSP7N60A 600V,7A TO-220D ISCRE TEMO S FETSSP7N80A 800V,7A TO-220D ISCRE TEMO S FETSSP80N06A 60V,80A TO-220 D ISCRE TEMO S FETSSR1N60A 600V,0.9A D-P AK D ISCRE TEMO S FETSSR2N60A 600V,1.8A D-P AK D ISCRE TEMO S FETSSR3055A 60V,8A D-P AKD ISCRE TEMO S FETSSS10N60A 600V,5.1A TO-220FDISC RETEMOS F ET SSS2N60A 600V,1.3A T O-220F DI SCRET EMOS FETS SS3N80A 800V,2A TO-220FDISCR ETEM OS FE T SSS3N90A 900V,2A TO-220FDISC RETEMOS F ET SSS4N60A 600V,3.5A T O-220(F/P) DIS CRETEMOSFET SS S4N60AS 600V,2.3A TO-220(F/P) DI SCRET EMOS FETS SS4N60AS 600V,2.3A TO-220FDISCR ETEM OS FE T SSS4N90AS 900V,2.8A TO-220FDIS CRETEMOSFET SS S5N80A 800V,3A TO-220FD ISCRE TEMO S FETSSS6N60A 600V, TO-220(F/P)常用贴片三极管查询贴片三极管型号查询直插封装的型号贴片的型号9011 1T9012 2T9013 J39014J69015 M69016 Y69018 J8S8050 J3YS8550 2T Y8050 Y18550Y22S A1015 BA2SC1815 HF2SC945 CRMMBT3904 1AMMM BT3906 2AMMBT2222 1PMMB T5401 2LM MBT5551 G1MMBT A42 1DMMB TA922DBC807-16 5ABC807-25 5BBC807-40 5CB C817-16 6ABC817-256BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838AD2N7002702回答人的补充2010-02-0117:31 Stem pel TypHerst.Ba seG eh?us eSt andar d Ver gleic hstypJ0HSM S-2840HPCSOT23sch ottky diod eJ01S O2906RN2N2906J03S O2907ARR2N2907AJ05SO2907RR2N2907J1HSMS-2841HPKSO T23schot tky d iodeJ1ZC830Ze tCZC820 v arica ps J1B SS138LMo tMSOT23n-ch en h TMO S fet J12SO2906A RR2N2906AJ1AZC830AZe tCSOT23va ricap hype rabru pt 28V 10p F@2VJ1BZC830BZetCSO T23varic ap hy perab rupt28V 10pF@2V J2ZC833ZetCSO T23ZC823J2AZC833AZetCS OT23vari cap h ypera brupt 28V33pF@2V J2BZC833BZe tCSOT23va ricap hype rabru pt 28V 33p F@2VJ3ZC831Ze tCSOT23ZC821J32SO5400RSGSR2N5400J33S O5401RSG SR2N5401J39SO692RSGSp np Vc e 300VJ3AZ C831AZetCSOT23var 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29F4000资料
MX29F400T/B4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORYerase cycle completion.•Ready/Busy pin (RY/BY)- Provides a hardware method of detecting program or erase cycle completion.- Sector protect/unprotect for 5V only system or 5V/12V system.•Sector protection- Hardware method to disable any combination of sectors from program or erase operations •100,000 minimum erase/program cycles•Latch-up protected to 100mA from -1V to VCC+1V •Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector•Low VCC write inhibit is equal to or less than 3.2V •Package type:- 44-pin SOP - 48-pin TSOP•Compatibility with JEDEC standard- Pinout and software compatible with single-power supply Flash•20 years data retentionFEATURES•524,288 x 8/262,144 x 16 switchable •Single power supply operation- 5.0V only operation for read, erase and program operation•Fast access time: 55/70/90/120ns •Low power consumption- 40mA maximum active current(5MHz)- 1uA typical standby current •Command register architecture- Byte/word Programming (7us/12us typical)- Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x7)•Auto Erase (chip & sector) and Auto Program- Automatically erase any combination of sectors with Erase Suspend capability.- Automatically program and verify data at specified address•Erase suspend/Erase Resume- Suspends an erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase.•Status Reply- Data polling & Toggle bit for detection of program andGENERAL DESCRIPTIONThe MX29F400T/B is a 4-mega bit Flash memory orga-nized as 512K bytes of 8 bits or 256K words of 16 bits.MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F400T/B is packaged in 44-pin SOP ,48-pin TSOP . It is designed to be reprogrammed and erased in system or in standard EPROM programmers.The standard MX29F400T/B offers access time as fast as 55ns, allowing operation of high-speed microproces-sors without wait states. To eliminate bus contention,the MX29F400T/B has separate chip enable (CE) and MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F400T/B uses a command register to manage this functionality. The command register allows for 100%TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maxi-mum EPROM compatibility.MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cy-cling. The MX29F400T/B uses a 5.0V ±10% VCC sup-ply to perform the High Reliability Erase and auto Pro-gram/Erase algorithms.The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up pro-tection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.PIN CONFIGURATIONS44 SOP(500 mil)PIN DESCRIPTIONSYMBOL PIN NAME A0~A17Address Input Q0~Q14Data Input/OutputQ15/A-1Q15(Word mode)/LSB addr(Byte mode)CE Chip Enable Input WE Write Enable Input BYTE Word/Byte Selction inputRESET Hardware Reset Pin/Sector Protect Unlock OE Output Enable Input RY/BY Ready/Busy Output VCC Power Supply Pin (+5V)GNDGround Pin48 TSOP (Standard Type) (12mm x 20mm)234567891011121314151617181920212244434241403938373635343332313029282726252423NC RY/BY A17A7A6A5A4A3A2A1A0CE GND OE Q0Q8Q1Q9Q2Q10Q3Q11RESET WE A8A9A10A11A12A13A14A15A16BYTE GND Q15/A-1Q7Q14Q6Q13Q5Q12Q4VCCM X 29F 400T /BA15A14A13A12A11A10A9A8NC NC WE RESETNC NC RY/BY NC A17A7A6A5A4A3A2A1123456789101112131415161718192021222324A16BYTE GND Q15/A-1Q7Q14Q6Q13Q5Q12Q4VCC Q11Q3Q10Q2Q9Q1Q8Q0OE GND CE A0484746454443424140393837363534333231302928272625MX29F400T/BSECTOR STRUCTUREMX29F400T TOP BOOT SECTOR ADDRESS TABLESector Size Address Range (in hexadecimal)(Kbytes/(x8)(x16) Sector A17A16A15A14A13A12Kwords)Address Range Address Range SA0000X X X64/3200000h-0FFFFh00000h-07FFFh SA1001X X X64/3210000h-1FFFFh08000h-0FFFFh SA2010X X X64/3220000h-2FFFFh10000h-17FFFh SA3011X X X64/3230000h-3FFFFh18000h-1FFFFh SA4100X X X64/3240000h-4FFFFh20000h-27FFFh SA5101X X X64/3250000h-5FFFFh28000h-2FFFFh SA6110X X X64/3260000h-6FFFFh30000h-37FFFh SA71110X X32/1670000h-77FFFh38000h-3BFFFh SA81111008/478000h-79FFFh3C000h-3CFFFh SA91111018/47A000h-7BFFFh3D000h-3DFFFh SA1011111X16/87C000h-7FFFFh3E000h-3FFFFh MX29F400B BOTTOM BOOT SECTOR ADDRESS TABLESector Size Address Range (in hexadecimal)(Kbytes/(x8)(x16) Sector A17A16A15A14A13A12Kwords)Address Range Address Range SA000000X16/800000h-03FFFh00000h-01FFFh SA10000108/404000h-05FFFh02000h-02FFFh SA20000118/406000h-07FFFh03000h-03FFFh SA30001X X32/1608000h-0FFFFh04000h-07FFFh SA4001X X X64/3210000h-1FFFFh08000h-0FFFFh SA5010X X X64/3220000h-2FFFFh10000h-17FFFh SA6011X X X64/3230000h-3FFFFh18000h-1FFFFh SA7100X X X64/3240000h-4FFFFh20000h-27FFFh SA8101X X X64/3250000h-5FFFFh28000h-2FFFFh SA9110X X X64/3260000h-6FFFFh30000h-37FFFh SA10111X X X64/3270000h-7FFFFh38000h-3FFFFh Note: Address range is A17~A-1 in byte mode and A17~A0 in word mode.AUTOMATIC PROGRAMMINGThe MX29F400T/B is byte programmable using the Au-tomatic Programming algorithm. The Automatic Pro-gramming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. The typical chip programming time at room temperature of the MX29F400T/B is less than 4 sec-onds.AUTOMATIC CHIP ERASEThe entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. T ypical erasure at room temperature is accomplished in less than 4 second. The Automatic Erase algorithm au-tomatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. AUTOMATIC SECTOR ERASEThe MX29F400T/B is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm automatically pro-grams the specified sector(s) prior to electrical erase. The timing and verification of electrical erase are con-trolled internally within the device.AUTOMATIC PROGRAMMING ALGORITHMMXIC's Automatic Programming algorithm requires the user to only write program set-up commands (including 2 unlock write cycle and A0H) and a program command (program data and address). The device automatically times the programming pulse width, provides the pro-gram verification, and counts the number of sequences.A status bit similar to DAT A polling and a status bit tog-gling between consecutive read cycles, provide feed-back to the user as to the status of the programming operation.AUTOMATIC ERASE ALGORITHMMXIC's Automatic Erase algorithm requires the user to write commands to the command register using stan-dard microprocessor write timings. The device will auto-matically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecu-tive read cycles provides feedback to the user as to the status of the programming operation.Register contents serve as inputs to an internal state-machine which controls the erase and programming cir-cuitry. During write cycles, the command register inter-nally latches address and data needed for the program-ming and erase operations. During a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of WE or CE, whichever hap-pens first .MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, reli-ability, and cost effectiveness. The MX29F400T/B elec-trically erases all bits simultaneously using Fowler-Nordheim tunneling. The bytes are programmed by us-ing the EPROM programming mechanism of hot elec-tron injection.During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command regis-ter to respond to its full command set.TABLE1. SOFTWARE COMMAND DEFINITIONSFirst Bus Second Bus Third Bus Fourth Bus Fifth Bus Sixth Bus Command Bus Cycle Cycle Cycle Cycle Cycle CycleCycle Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Reset 1XXXH F0HRead1RA RDRead Silicon ID Word4555H AAH2AAH55H555H90H ADI DDIByte4AAAH AAH555H55H AAAH90H ADI DDISector Protect Word4555H AAH2AAH55H555H90H(SA)XX00HVerify x02H XX01HByte4AAAH AAH555H55H AAAH90H(SA)00Hx04H01HPorgram Word4555H AAH2AAH55H555H A0H PA PDByte4AAAH AAH555H55H AAAH A0H PA PDChip Erase Word6555H AAH2AAH55H555H80H555H AAH2AAH55H555H10H Byte6AAAH AAH555H55H AAAH80H AAAH AAH555H55H AAAH10H Sector Erase Word6555H AAH2AAH55H555H80H555H AAH2AAH55H SA30H Byte6AAAH AAH555H55H AAAH80H AAAH AAH555H55H SA30H Sector Erase Suspend1XXXH B0HSector Erase Resume1XXXH30HUnlock for sector6555H AAH2AAH55H555H80H555H AAH2AAH55H555H20H protect/unprotectNote:1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacture code,A1=0, A0 = 1 for device code, A2~A17=do not care. (Refer to table 3)DDI = Data of Device identifier : C2H for manufacture code, 23H/ABH (x8) and 2223H/22ABH (x16) for device code.X = X can be VIL or VIHRA=Address of memory location to be read.RD=Data to be read at location RA.2.P A = Address of memory location to be programmed.PD = Data to be programmed at location P A.SA = Address to the sector to be erased.3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or 555H to Address A10~A-1 in byte mode.Address bit A11~A17=X=Don't care for all address commands except for Program Address (P A) and SectorAddress (SA). Write Sequence may be initiated with A11~A17 in either state.4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it means the sector is still not being protected.PinsCEOEWEA0A1A6A9Q0 ~ Q15ModeRead Silicon ID LLHLLXV ID (2)C2H (Byte mode)Manfacturer Code(1)00C2H (Word mode)Read Silicon ID LLHHLXV ID (2)23H/ABH (Byte mode)Device Code(1)2223H/22ABH (Word mode)Read L L H A0A1A6A9D OUT Standby H X X X X X X HIGH Z Output Disable L H H X X X X HIGH Z WriteL HLA0A1A6A9D IN (3)Sector Protect with 12V LV ID (2)LXXLV ID (2)Xsystem(6)Chip Unprotect with 12V LV ID (2)LXXHV ID (2)Xsystem(6)Verify Sector Protect LLHXHXV ID (2)Code(5)with 12V systemSector Protect without 12V LHLXXLHXsystem (6)Chip Unprotect without 12V LHLXXHHXsystem (6)Verify Sector Protect/Unprotect LLHXHXHCode(5)without 12V system (7)ResetXXXXXXXHIGH ZTABLE 2. MX29F400T/B BUS OPERATIONNOTES:1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 1.2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V .3. Refer to Table 1 for valid Data-In during a write operation.4. X can be VIL or VIH.5. Code=00H/XX00H means unprotected.Code=01H/XX01H means protected.A17~A12=Sector address for sector protect.6. Refer to sector protect/unprotect algorithm and waveform.Must issue "unlock for sector protect/unprotect" command before "sector protect/unprotect without 12V system" command.7. The "verify sector protect/unprotect without 12V sysytem" is only following "Sector protect/unprotect without 12V system"command.Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Either of the two reset com-mand sequences will reset the device(when applicable).COMMAND DEFINITIONSDevice operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode.T able 1 defines the valid register command sequences.READ/RESET COMMANDThe read or reset operation is initiated by writing the read/reset command sequence into the command reg-ister. Microprocessor read cycles retrieve array data.The device remains enabled for reads until the command register contents are altered.If program-fail or erase-fail happen, the write of F0H will reset the device to abort the operation. A valid com-mand must then be written to place the device in the desired state.SILICON-ID-READ COMMANDFlash memories are intended for use in applications where the local CPU alters memory contents. As such, manu-facturer and device codes must be accessible while the device resides in the target system. PROM program-mers typically access signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto address lines is not generally desired system design practice.The MX29F400T/B contains a Silicon-ID-Read opera-tion to supplement traditional PROM programming meth-odology. The operation is initiated by writing the read silicon ID command sequence into the command regis-ter. Following the command write, a read cycle with A1=VIL,A0=VIL retrieves the manufacturer code of C2H/00C2H. A read cycle with A1=VIL, A0=VIH returns the device code of 23H/2223H for MX29F400T , ABH/22ABH for MX29F400B.SET-UP AUTOMATIC CHIP/SECTOR ERASE PinsA0A1Q15~Q8Q7Q6Q5Q4Q3Q2Q1Q0Code(Hex)Manufacture code Word VIL VIL 00H 1100001000C2H Byte VIL VIL X 11000010C2H Device code Word VIH VIL 22H 001000112223H for MX29F400T Byte VIH VIL X 0010001123H Device code Word VIH VIL 22H 1010101122ABH for MX29F400B ByteVIH VIL X 10101011ABHSector Protection X VIH X 0000000101H (Protected)VerificationXVIHX00H (Unprotected)TABLE 3. EXPANDED SILICON ID CODECOMMANDSChip erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command 80H. Two more "unlock" write cy-cles are then followed by the chip erase command 10H.The Automatic Chip Erase does not require the device to be entirely pre-programmed prior to executing the Au-tomatic Chip Erase. Upon executing the Automatic Chip Erase, the device will automatically program and verify the entire memory for an all-zero data pattern. When the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. The erase and verify operations are completed when the data on Q7 is "1" at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations.When using the Automatic Chip Erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verification command is required).If the Erase operation was unsuccessful, the data on Q5 is "1"(see T able 4), indicating the erase operation exceed internal timing limit.The automatic erase begins on the rising edge of the last WE or CE, whichever happens later, pulse in the command sequence and terminates when the data on Q7 is "1" and the data on Q6 stops toggling for two con-secutive read cycles, at which time the device returns to the Read mode.StatusQ7Q6Q5Q3Q2RY/BY Note1Note2Byte Program in Auto Program Algorithm Q7Toggle 0N/A No 0Toggle Auto Erase Algorithm0Toggle 01Toggle0Erase Suspend Read1No 0N/A Toggle1(Erase Suspended Sector)Toggle In ProgressErase Suspended ModeErase Suspend Read Data Data Data Data Data 1(Non-Erase Suspended Sector)Erase Suspend ProgramQ7Toggle 0N/A N/A 0Byte Program in Auto Program AlgorithmQ7Toggle 1N/A No 0Toggle ExceededTime Limits Auto Erase Algorithm0Toggle 11Toggle 0Erase Suspend ProgramQ7Toggle1N/AN/Aerase margin has been achieved for the memory array (no erase verification command is required). Sector erase is a six-bus cycle operation. There are two "un-lock" write cycles. These are followed by writing the set-up command 80H. T wo more "unlock" write cycles are then followed by the sector erase command 30H. The sector address is latched on the falling edge of WEor CE, whichever happens later, while the command(data)is latched on the rising edge of WE or CE, whichever happens first. Sector addresses selected are loaded into internal register on the sixth falling edge of WE or CE, whichever happens later. Each successive sector load cycle started by the falling edge of WE or CE, which-ever happens later, must begin within 30us from the rising edge of the preceding WE or CE, whichever hap-pens First, otherwise, the loading period ends and inter-nal auto sector erase cycle starts. (Monitor Q3 to deter-mine if the sector erase timer window is still open, see section Q3, Sector Erase Timer.) Any command other than Sector Erase(30H) or Erase Suspend(B0H) during the time-out period resets the device to read mode.SECTOR ERASE COMMANDSThe Automatic Sector Erase does not require the de-vice to be entirely pre-programmed prior to executing the Automatic Set-up Sector Erase command and Auto-matic Sector Erase command. Upon executing the Au-tomatic Sector Erase command, the device will auto-matically program and verify the sector(s) memory for an all-zero data pattern. The system is not required to provide any control or timing during these operations.When the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. The erase and verify operations are complete when the data on Q7 is "1" and the data on Q6 stops toggling for two consecutive read cycles, at which time the device returns to the Read mode. The system is not required to provide any control or timing during these operations.When using the Automatic Sector Erase algorithm, note that the erase automatically terminates when adequate Table 4. Write Operation StatusNote:1.Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further details.2.Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.See "Q5:Exceeded Timing Limits " for more information.ERASE SUSPENDThis command only has meaning while the state ma-chine is executing Automatic Sector Erase operation, and therefore will only be responded during Automatic Sector Erase operation. When the Erase Suspend com-mand is written during a sector erase operation, the de-vice requires a maximum of 100us to suspend the erase operations. However, When the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After this command has been ex-ecuted, the command register will initiate erase suspend mode. The state machine will return to read mode auto-matically after suspend is ready. At this time, state ma-chine only allows the command register to respond to the Read Memory Array, Erase Resume and program commands.The system can determine the status of the program operation using the Q7 or Q6 status bits, just as in the standard program operation. After an erase-suspend pro-gram operation is complete, the system can once again read array data within non-suspended sectors. ERASE RESUMEThis command will cause the command register to clear the suspend state and return back to Sector Erase mode but only if an Erase Suspend command was previously issued. Erase Resume will not have any effect in all other conditions.Another Erase Suspend command can be written after the chip has resumed erasing.SET-UP AUTOMATIC PROGRAMCOMMANDSTo initiate Automatic Program mode, A three-cycle com-mand sequence is required. There are two "unlock" write cycles. These are followed by writing the Automatic Pro-gram command A0H.Once the Automatic Program command is initiated, the next WEor CE, pulse causes a transition to an active programming operation. Addresses are latched on the falling edge, and data are internally latched on the rising edge of the WE or CE, whichever happens first, pulse. The rising edge of WE or CE, whichever happens first, also begins the programming operation. The sys-tem is not required to provide further controls or timings. The device will automatically provide an adequate inter-nally generated program pulse and verify margin.If the program opetation was unsuccessful, the data on Q5 is "1"(see T able 4), indicating the program operation exceed internal timing limit. The automatic programming operation is completed when the data read on Q6 stops toggling for two consecutive read cycles and the data on Q7 and Q6 are equivalent to data written to these two bits, at which time the device returns to the Read mode(no program verify command is required).DATA POLLING-Q7The MX29F400T/B also features Data Polling as a method to indicate to the host system that the Auto-matic Program or Erase algorithms are either in progress or completed.While the Automatic Programming algorithm is in opera-tion, an attempt to read the device will produce the complement data of the data last written to Q7. Upon completion of the Automatic Program Algorithm an at-tempt to read the device will produce the true data last written to Q7. The Data Polling feature is valid after the rising edge of the fourth WEor CE, whichever happens first, pulse of the four write pulse sequences for auto-matic program.While the Automatic Erase algorithm is in operation, Q7 will read "0" until the erase operation is competed. Upon completion of the erase operation, the data on Q7 will read "1". The Data Polling feature is valid after the rising edge of the sixth WE or CE, whichever happens first pulse of six write pulse sequences for automatic chip/ sector erase.The Data Polling feature is active during Automatic Pro-gram/Erase algorithm or sector erase time-out.(see sec-tion Q3 Sector Erase Timer)RY/BY:Ready/BusyThe RY/BY is a dedicated, open-drain output pin that indicates whether an Automatic Erase/Program algorithm is in progress or complete. The RY/BY status is valid after the rising edge of the final WE or CE, whichever happens first, pulse in the command sequence. Since RY/BY is an open-drain output, several RY/BY pins can be tied together in parallel with a pull-up resistor to Vcc.Q2:Toggle Bit IIThe "Toggle Bit II" on Q2, when used with Q6, indicates whether a particular sector is actively eraseing (that is,the Automatic Erase alorithm is in process), or whether that sector is erase-suspended. Toggle Bit I is valid af-ter the rising edge of the final WE or CE, whichever hap-pens first, pulse in the command sequence.Q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But Q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. Q6, by com-parison, indicates whether the device is actively eras-ing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to T able 4 to compare outputs for Q2 and Q6.Reading Toggle Bits Q6/ Q2Whenever the system initially begins reading toggle bit status, it must read Q7-Q0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on Q7-Q0 on the following read cycle.However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the sys-tem also should note whether the value of Q5 is high (see the section on Q5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as Q5 went high. If the toggle bit is no longer toggling, the device has successfuly completed the program or erase opera-tion. If it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data.The remaining scenario is that system initially determines that the toggle bit is toggling and Q5 has not gone high.The system may continue to monitor the toggle bit and Q5 through successive read cycles, determining the sta-tus as described in the previous paragraph. Alterna-tively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation.Q6:Toggle BIT IT oggle Bit I on Q6 indicates whether an Automatic Pro-gram or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode.T oggle Bit I may be read at any address, and is valid after the rising edge of the final WE or CE, whichever happens first, pulse in the command sequence(prior to the program or erase operation), and during the sector time-out.During an Automatic Program or Erase algorithm opera-tion, successive read cycles to any address cause Q6to toggle. The system may use either OE or CE to con-trol the read cycles. When the operation is complete, Q6stops toggling.After an erase command sequence is written, if all sec-tors selected for erasing are protected, Q6 toggles and returns to reading array data. If not all selected sectors are protected, the Automatic Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.The system can use Q6 and Q2 together to determine whether a sector is actively erasing or is erase sus-pended. When the device is actively erasing (that is, the Automatic Erase algorithm is in progress), Q6 toggling.When the device enters the Erase Suspend mode, Q6stops toggling. However, the system must also use Q2to determine which sectors are erasing or erase-sus-pended. Alternatively, the system can use Q7.If a program address falls within a protected sector, Q6toggles for approximately 2 us after the program com-mand sequence is written, then returns to reading array data.Q6 also toggles during the erase-suspend-program mode,and stops toggling once the Automatic Program algo-rithm is complete.T able 4 shows the outputs for Toggle Bit I on Q6.If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.)If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode.T able 4 shows the outputs for RY/BY .。
MC9RS08KA4_8中文数据手册
3FFE
3FFF
BC(JMP 机器码)
跳转地址高字节
跳转地址低字节
飞 3.4 激活背景调试模式 背景调试功能是由 RS08 核内的 BDC 管理的。在软件开发过程中，BDC 提供了
H 一种分析 MCU 操作方法。 C 有 4 种激活背景调试的方法：
*在 POR 期间或发出背景调试强制复位命令之后，拉 BKGD/MS 引脚为低
3
北京飞锐泰克科技有限公司 tel:010-59831537 fax:010-59831536
LM2904M中文资料
-
0.8 2.0
-
0.8 2.0
-
0.8 2.0 mA
RL = ∞, VCC = 5V
- 0.5 1.2 - 0.5 1.2 - 0.5 1.2 mA
Large Signal Voltage Gain
VCC = 15V,
GV RL= 2kΩ
50 100 - 25 100 - 25 100 - V/mV
元器件交易网
LM2904,LM358/LM358A,LM258/ LM258A
Dual Operational Amplifier
Features
• Internally Frequency Compensated for Unity Gain • Large DC Voltage Gain: 100dB • Wide Power Supply Range:
Differential Input Voltage
VI(DIFF)
-
- - VCC - - VCC -
- VCC V
Note: 1. This parameter, although guaranteed, is not 100% tested in production.
3
元器件交易网
- - 7.0 - - 9.0 - - 10.0 mV
Input Offset Voltage Drift
∆VIO/∆T RS = 0Ω
- 7.0 - - 7.0 - - 7.0 - µV/°C
Input Offset
IIO
Current
-
- - 100 - - 150 - 45 200 nA
Input Offset Current Drift
水龙头cn
04-001-32-13
内摩擦片Ⅲ
2
SL001.32.13
23
04-001-32-14
内联结套
1
SL001.32.14
24
04-001-32-15
加力套
1
SL001.32.15
25
B8931-075-59
挡圈75
1
26
6009
轴承45×75×16
1
GB/T276-94
27
04-001-32-16
1
46
04-001-45
活接头Rc1 1/2"
1
47
04-001-28-00
管1 1/2"
1
SL001.28.00
48
B08
螺母M24×
1
GB812-88
49
04-001-29
接头
1
50
04-001-30-00
联结管（一）
1
SL001.30.00
51
04-001-31-00
联结管（二）
1
SL001.31.00
11
B1152-10-01
油杯M10×1
1
GB1152-89
12
04-001-05-10
下盘根盒
1
SL001.05.10
13
04-001-05-11
隔环
2
SL001.05.11
14
04-001-05-12
下O型密封压套
1
SL001.05.12
15
B3452
O型密封圈109×
1
GB/
16
B0075-10-012-74
德马格注塑机规格参数图册
1760500275585/6851085/1185770x770520x5201605929International size description 国际标准尺寸Locking force 锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v) 模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio 长径比Spec. injection pressure(up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection1)最大注射速率1)> without accumulator 2) > 无蓄能器2) [cm3/s]> with accumulator > 加蓄能器 [cm3/s]Injection Speed 注射速度Under 1000bar injection pressure 在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator [mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)2) > 马达1(120bar)2) [g/s]> motor 2(120bar)2) > 马达2(120bar)2) [g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke 最大螺杆行程 [mm]Max. distance of nozzle retraction3) 最大喷嘴行程3) [mm]Nozzle stroke in automatic mode3) 喷嘴工作行程3) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity4) 料斗容积4) [Itr.]Oil tank capacity 油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump2) > 油泵2) [≈kW]> electric screw drive > 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive2) > 液压驱动功率 2) [kW]> capacity with electr. drive2) > 电气总功率2) [kW]Dry cycles(Euromap6)2) 空循环(EUROMAP6)2) [s-mm]Net weight(without oil)5) 机器净重(不含油)5) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)6) 液压马达末端伸出机身距离 1(H)6) [mm]Motor end projection 2(H)6) 液压马达末端伸出机身距离 2(H)6) [mm]Electric drive projection (H)6) 预塑电动马达伸出机身距离 (H)6) [mm]The shown specifications reflect the state at the time of printing. We 1) Rate of injection based on the standard plasticizing unit1)注射速率基于标准塑化装置2310575340690/7901265/1365860x860580x5801807336International size description 国际标准尺寸Locking force锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v)模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio长径比Spec. injection pressure (up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm 3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection 1)最大注射速率1)> without accumulator 2) > 无蓄能器2) [cm 3/s]> with accumulator > 加蓄能器[cm 3/s]Injection Speed注射速度Under 1000bar injection pressure在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator[mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)2)> 马达1(120bar)2)[g/s]> motor 2(120bar)2) > 马达2(120bar)2) [g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke最大螺杆行程 [mm]Max. distance of nozzle retraction 3) 最大喷嘴行程3) [mm]Nozzle stroke in automatic mode 3)喷嘴工作行程3)[mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity 4)料斗容积4)[Itr.]Oil tank capacity油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump 2)> 油泵2) [≈kW]> electric screw drive> 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive 2)> 液压驱动功率 2)[kW]> capacity with electr. drive 2) > 电气总功率2) [kW]Dry cycles(Euromap6)2)空循环(EUROMAP6)2)[s-mm]Net weight(without oil)5) 机器净重(不含油)5)[≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)6) 液压马达末端伸出机身距离 1(H)6)[mm]Motor end projection 2(H)6) 液压马达末端伸出机身距离 2(H)6) [mm]3080675330710/8301385/1505930x930630x6302007336International size description 国际标准尺寸Locking force 锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v) 模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio 长径比Spec. injection pressure(up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection1)最大注射速率1)> without accumulator 2) > 无蓄能器2) [cm3/s]> with accumulator > 加蓄能器 [cm3/s]Injection Speed 注射速度Under 1000bar injection pressure 在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator [mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)2) > 马达1(120bar)2) [g/s]> motor 2(120bar)2) > 马达2(120bar)2) [g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke 最大螺杆行程 [mm]Max. distance of nozzle retraction3) 最大喷嘴行程3) [mm]Nozzle stroke in automatic mode3) 喷嘴工作行程3) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity4) 料斗容积4) [Itr.]Oil tank capacity 油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump2) > 油泵2) [≈kW]> electric screw drive > 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive2) > 液压驱动功率 2) [kW]> capacity with electr. drive2) > 电气总功率2) [kW]Dry cycles(Euromap6)2) 空循环(EUROMAP6)2) [s-mm]Net weight(without oil)5) 机器净重(不含油)5) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)6) 液压马达末端伸出机身距离 1(H)6) [mm]Motor end projection 2(H)6) 液压马达末端伸出机身距离 2(H)6) [mm]3850730350745/9501475/16801040x1060720x7202007336International size description 国际标准尺寸Locking force 锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v) 模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio 长径比Spec. injection pressure(up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection1)最大注射速率1)> without accumulator 2) > 无蓄能器2) [cm3/s]> with accumulator > 加蓄能器 [cm3/s]Injection Speed 注射速度Under 1000bar injection pressure 在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator [mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)2) > 马达1(120bar)2) [g/s]> motor 2(120bar)2) > 马达2(120bar)2) [g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke 最大螺杆行程 [mm]Max. distance of nozzle retraction3) 最大喷嘴行程3) [mm]Nozzle stroke in automatic mode3) 喷嘴工作行程3) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity4) 料斗容积4) [Itr.]Oil tank capacity 油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump2) > 油泵2) [≈kW]> electric screw drive > 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive2) > 液压驱动功率 2) [kW]> capacity with electr. drive2) > 电气总功率2) [kW]Dry cycles(Euromap6)2) 空循环(EUROMAP6)2) [s-mm]Net weight(without oil)5) 机器净重(不含油)5) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)6) 液压马达末端伸出机身距离 1(H)6) [mm]Motor end projection 2(H)6) 液压马达末端伸出机身距离 2(H)6) [mm]4620770380825/10501595/18201200x1200820x8202309642International size description 国际标准尺寸Locking force 锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v) 模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio 长径比Spec. injection pressure(up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection1)最大注射速率1)> without accumulator 2) > 无蓄能器2) [cm3/s]> with accumulator > 加蓄能器 [cm3/s]Injection Speed 注射速度Under 1000bar injection pressure 在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator [mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)2) > 马达1(120bar)2) [g/s]> motor 2(120bar)2) > 马达2(120bar)2) [g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke 最大螺杆行程 [mm]Max. distance of nozzle retraction3) 最大喷嘴行程3) [mm]Nozzle stroke in automatic mode3) 喷嘴工作行程3) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity4) 料斗容积4) [Itr.]Oil tank capacity 油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump2) > 油泵2) [≈kW]> electric screw drive > 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive2) > 液压驱动功率 2) [kW]> capacity with electr. drive2) > 电气总功率2) [kW]Dry cycles(Euromap6)2) 空循环(EUROMAP6)2) [s-mm]Net weight(without oil)5) 机器净重(不含油)5) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)6) 液压马达末端伸出机身距离 1(H)6) [mm]Motor end projection 2(H)6) 液压马达末端伸出机身距离 2(H)6) [mm]5500850400920/11501770/2000 1300x1300920x9202609642International size description 国际标准尺寸Locking force锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v)模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio长径比Spec. injection pressure (up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm 3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection 3) 最大注射速率3)> without accumulator 4) > 无蓄能器4) [cm 3/s]> with accumulator > 加蓄能器[cm 3/s]Injection Speed注射速度Under 1000bar injection pressure在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator[mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)4) > 马达1(120bar)4) [g/s]> motor 2(120bar)4)> 马达2(120bar)4)[g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke最大螺杆行程 [mm]Max. distance of nozzle retraction 5)最大喷嘴行程5)[mm]Nozzle stroke in automatic mode 5) 喷嘴工作行程5) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity 6) 料斗容积6) [Itr.]Oil tank capacity油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump 4)> 油泵4) [≈kW]> electric screw drive> 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive 4) > 液压驱动功率 4) [kW]> capacity with electr. drive 4)> 电气总功率4) [kW]Dry cycles(Euromap6)4)空循环(EUROMAP6)4)[s-mm]Net weight(without oil)7) 8) 机器净重(不含油)7) 8) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)9) 液压马达末端伸出机身距离 1(H)9) [mm]Motor end projection 2(H)9) 液压马达末端伸出机身距离 2(H)9) [mm]Electric drive projection (H)9)预塑电动马达伸出机身距离 (H)9)[mm]71509304501020/12501950/2180 1450x14701020x102030014976International size description 国际标准尺寸Locking force锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v)模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio长径比Spec. injection pressure (up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm 3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection 3) 最大注射速率3)> without accumulator 4) > 无蓄能器4) [cm 3/s]> with accumulator > 加蓄能器[cm 3/s]Injection Speed注射速度Under 1000bar injection pressure在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator[mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)4) > 马达1(120bar)4) [g/s]> motor 2(120bar)4)> 马达2(120bar)4)[g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke最大螺杆行程 [mm]Max. distance of nozzle retraction 5)最大喷嘴行程5)[mm]Nozzle stroke in automatic mode 5) 喷嘴工作行程5) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity 6) 料斗容积6) [Itr.]Oil tank capacity油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump 4)> 油泵4) [≈kW]> electric screw drive> 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive 4) > 液压驱动功率 4) [kW]> capacity with electr. drive 4)> 电气总功率4) [kW]Dry cycles(Euromap6)4)空循环(EUROMAP6)4)[s-mm]Net weight(without oil)7) 8) 机器净重(不含油)7) 8) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)9) 液压马达末端伸出机身距离 1(H)9) [mm]Motor end projection 2(H)9) 液压马达末端伸出机身距离 2(H)9) [mm]Electric drive projection (H)9)预塑电动马达伸出机身距离 (H)9)[mm]880010305001120/13502150/3280 1620x16201120x1120350197102International size description 国际标准尺寸Locking force锁模力 [kN]Max. mould opening stroke 最大开模行程 [mm]Min. mould height 最小模厚 [mm]Max./enlarged mould height 最大/增大模厚 [mm]Overall size of platens/enlarged 最大/增大模板间距 [mm]Mould platen(h x v)模板尺寸(水平*垂直) [mm]Distance between tie bars(h x v) 拉杆间距(水平*垂直) [mm]Ejection stroke 顶出行程 [mm]Ejection force 顶出力 [kN]Retraction force 回缩力 [kN]Screw geometry 螺杆形状L/D ratio长径比Spec. injection pressure (up to 400℃) 注射压力(至400℃) [bar]Max. cylinder head volume 理论注射容积 [cm 3]Max. shot weight(PS) 最大注射量 [g]Max.Rate of injection 3) 最大注射速率3)> without accumulator 4) > 无蓄能器4) [cm 3/s]> with accumulator > 加蓄能器[cm 3/s]Injection Speed注射速度Under 1000bar injection pressure在1000bar 的注射压力下> without accumulator [mm/s]> with accumulator[mm/s]Plasticising rate(PS) 塑化率(PS)> motor 1(120bar)4) > 马达1(120bar)4) [g/s]> motor 2(120bar)4)> 马达2(120bar)4)[g/s]> electric screw drive > 电动螺杆 [g/s]Max. screw stroke最大螺杆行程 [mm]Max. distance of nozzle retraction 5)最大喷嘴行程5)[mm]Nozzle stroke in automatic mode 5) 喷嘴工作行程5) [mm]Max. nozzle dipping depth(SVO) 最大喷嘴伸出模板长度(SVO) [mm]Nozzle sealing force 喷嘴接触力 [kN]Number of heating zones 加热段数量Hopper capacity 6) 料斗容积6) [Itr.]Oil tank capacity油箱容量 [Itr.]Installed electrical rating 额定电气功率> pump 4)> 油泵4) [≈kW]> electric screw drive> 电动螺杆 [≈kW]> heating capacity of screw cylinder > 料筒加热功率 [≈kW]> capacity with hydraulic drive 4) > 液压驱动功率 4) [kW]> capacity with electr. drive 4)> 电气总功率4) [kW]Dry cycles(Euromap6)4)空循环(EUROMAP6)4)[s-mm]Net weight(without oil)7) 8) 机器净重(不含油)7) 8) [≈kg]Machine dimensions(lxwxh) 机器尺寸(lxwxh) [≈m]Motor end projection 1(H)9) 液压马达末端伸出机身距离 1(H)9) [mm]Motor end projection 2(H)9) 液压马达末端伸出机身距离 2(H)9) [mm]Electric drive projection (H)9)预塑电动马达伸出机身距离 (H)9)[mm]Equipment Systec C 1,600 ... 8,000 kN● Basic equipment● Basic equipmentEquipment Systec C 1,600 ... 8,000 kN2021● Basic equipment ○ Additional price - Not availableThe shown specifications reflect the state at the time of printing. We reserve the right to modify specifications.● Basic equipment ○ Additional price - Not availableThe shown specifications reflect the state at the time of printing. We reserve the right to modify specifications.Systec C 1,600 ... 8,000 kN配置● 基本配置○ 选配装置- 不可选本页参数为印刷前取得的数据。
4-1393813-0资料
4-1393813-0 Product DetailsHome | Customer Support | Suppliers | Site Map | Privacy Policy | Browser Support© 2007 Tyco Electronics Corporation All Rights Reserved SearchHome > Products > By Type > Relays > Product Feature Selector > Product Details4-1393813-0Active Communications / Signal PC Board RelaysConverted to EU RoHS/ELV Compliant (Statement ofCompliance)Product Highlights:?V23054/Cradle Relay S Series?DC Actuating System?Input Voltage = 24 VDC?Contact Arrangement = 6 Form C,6PDT, 6 C/O?Contact Current Rating = .2 Amps.View all FeaturesCheck Pricing &AvailabilitySearch for ToolingProduct FeatureSelectorContact Us AboutThis ProductQuick LinksDocumentation & Additional InformationProduct Drawings:?None AvailableCatalog Pages/Data Sheets: ?None AvailableProduct Specifications:?None AvailableApplication Specifications: ?None AvailableInstruction Sheets:?None AvailableCAD Files:?None Available Additional Information:?Product Line InformationRelated Products:?ToolingProduct Features (Please use the Product Drawing for all design activity)Product Type Features:?Termination Type = Solder/Plug-In TerminalsElectrical Characteristics:?Actuating System = DC?Input Voltage (VDC) = 24?Contact Current Rating (Amps.) = 0.2?Coil Resistance (?) = 630?Coil Power, Nominal (mW) = 1000?Dielectric Between Coil and Contacts (V rms) =500Body Related Features:?Series = V23054/Cradle Relay S?Polarized = NoContact Related Features:?Mounting Options = Socket?Enclosure = Dust Protected?FCC Part 68 Isolation = No?Approved Standards = None?Contact Material = Hard Gold?Approx. Dimensions (L x W x H) (mm [in]) =35.00 x 19.00 x 30.00 [1.378 x .748 x 1.181]?Compatible Socket = With?Contact Type = Single?Pin Configuration = Industry Standard Configuration Related Features:?Contact Arrangement = 6 Form C, 6PDT, 6 C/O ?Coil Magnetic System = Non Polarized,Monostable?Coil Suppression Diode = WithoutIndustry Standards:?RoHS/ELV Compliance = RoHS compliant, ELVcompliant?Lead Free Solder Processes = Wave soldercapable to 240°C, Wave solder capable to 260°C, Wave solder capable to 265°C?RoHS/ELV Compliance History = Converted tocomply with RoHS directiveOther:?Brand = AxicomProvide Website Feedback | Contact Customer Support Products Documentation Resources My Account Customer Support。
袋式除尘器型号之欧阳语创编
2540
2880
气箱脉冲袋式除尘器技术参数：
型号
处理风量
(m3/h)
滤袋风速
(m/min)
过滤面积
(m2)
滤袋数
(个)
耗气量
(m3/min)
阻力
(Pa)
含尘浓度
(g/m3)
保温层面
积(m2)
重量
(t)
32-3
6900
1.2-2.0
93
96
0.27
1470-
1770
<1000
26.5
2.4
32-4
4361
3584
16.7
352
84.0
HCMC型低压长袋脉冲袋式除尘器技术参数：
型号
处理风量（m3）
总过滤面积（㎡）
室数（个）
风速（m/min）
滤袋规格（φ×L）
清灰压力（Mpa）
YLC84-5
61500～73800
1025
5
1～1.2
130*6000
0.3-0.4
YLC 84-6
61200～79344
448
2.1
142
11.8
64-8
35700
496
512
2.4
166
12.5
96-4
26800
1.2-2.0
372
384
1.2
1470-
1770
<1300
110
8.7
96-5
33400
465
480
1.5
120
11.8
96-6
40100
557
SIMOTICS M-1PH8产品数据表说明书
Figure similar
Engineering data
ALM 400V Y BLM/SLM 400V
ALM/BLM/SLM 480V
PN
MN
IN
UN
[kW] [Nm]
[A]
[V]
135.0 737.0 250.0 395 130.0 828.0 270.0 340 135.0 731.0 245.0 450
0.83 0.85 0.83
119.0 119.0 119.0
Motor type Shaft height Cooling Vibration severity grade Shaft and flange accuracy Degree of protection Design acc. to Code I
Temperature monitoring
Color Type of the bearing Shaft extension
Encoder system
Mechanical data Squirrel cage asynchronous motor 225 Forced ventilation NDE -> DE A N IP55 IM B3 (IM B6, IM B7, IM B8) KTY84 temperature sensor in the stator winding Standard (Anthracite RAL 7016) Standard Feather key with half key balancing Incremental encoder HTL 1024 S/R, max. encoder speed = 9000 rpm
Coil current
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UNISONIC TECHNOLOGIES CO., LTDM2904 LINEAR INTEGRATED CIRCUITSINGLE-SUPPLY DUALOPERATIONAL AMPLIFIERDESCRIPTIONThe UTC M2904 consists of two independent, high gain, internally frequency compensated operation amplifiers which were designed specifically to operate from a single power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage.FEATURES*Single Supply*Operating Voltage: +3V~+32V*Low Operating Current: 0.7mA (typ.) *Slew Rate: 0.5V/μs (typ.)*Pb-free plating product number: M2904LORDERING INFORMATIONOrder NumberNormal Lead Free PlatingPackage PackingM2904-D08-T M2904L-D08-T DIP-8 Tube M2904-P08-R M2904L-P08-R TSSOP-8 Tape Reel M2904-P08-T M2904L-P08-T TSSOP-8 Tube M2904-S08-R M2904L-S08-R SOP-8 Tape Reel M2904-S08-T M2904L-S08-T SOP-8 TubePIN CONFIGURATIONOUT1IN1(-)IN1(+)GNDVcc +OUT2IN2(-)IN2(+)EQUIVALENT CIRCUIT (1/2 shown)- INPUT + INPUTGNDV+OUTPUTABSOLUTE MAXIMUM RATINGS (Ta=25 )PARAMETER SYMBOL RATINGS UNITSupply Voltage V +(V +/V -)32( or±16) V Differential Input Voltage V I(DIFF)32 V Input Voltage V IN -0.3~+32 VDIP-8 500SOP-8 300Power Dissipation TSSOP-8P D 300mW Junction Temperature T J +125 °COperating Temperature T OPR -20~+85 °C Storage Temperature T STG -40~+150 °CNote 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0 ~+70 operating temperature range and assured by design from -20 ~+85 .ELECTRICAL CHARACTERISTICS (Ta=25 , V+=5V)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITInput Offset Voltage V I(OFF) Rs =0Ω 2 7 mVInput Offset Current I I(OFF) 5 50 nA Input Bias Current I I(BIAS) 25 250nA Large Signal Voltage Gain Gv R L 2k Ω 100 dB Maximum Output Voltage Swing V OM R L =2k Ω 3.5 V Input Common Mode Voltage V I(CM) 0~3.5 V Common Mode Rejection Ratio RR 85 dB Supply Voltage Rejection Ratio SVR 100 dBOutput Source Current I SOURCE V IN +=1V,V IN -=0V 20 30 mA Output Sink Current I SINK V IN +=0V,V IN -=1V 8 20 mAChannel Separation CS f=1k ~20kHz,Input Referred 120 dB Operating Current I CC R L =∞ 0.7 1.2 mASlew Rate SR V +/V -=±15V 0.5 V/µsUnity Gain Bandwidth f T V +/V -=±15V 0.2 MHzTYPICAL CHARACTERISTICSOperating Current vs .Operating Voltage O p e r a t i n g C u r r e n t , I c c (m A )Operating Voltage: V (V)0Input Bias Current vs.Operating VoltageI n p u t B i a s C u r r e n t , I I (B I A S )(n A )10251007550203040Voltage Gain vs.Operating VoltageO p e n L o o p V o l t a g e G a i n , G v (d B )104016012080203040Operating Voltage: V +(V)80100Frequency, f (Hz)1kC h a n n e l S e pa r a ti o n , C S (d B )604010k100kChannel Separation vs. Frequency1kM a x i m u mO u t p u t V o l t a g e S w i n g , V o M (V p -p )10k5201510100k 1MFrequency , f (Hz)Maximum Output Voltage Swing vs.Frequency O p e n L o o p V o l t a g e G a i n , G v (d B )Frequency , f (Hz)Open Loop Voltage Gain vs. Frequency Operating Voltage: V (V)143201108014012010001001k 60402010k 100k 1M 10MTYPICAL CHARACTERISTICS(Cont.)M a x i m u m O u tp u t V o l t a g e , V o p p (V )28Maximum Output Voltage Swing vs.-50Ambient Temperature , Ta ( )-25I n p u t O f f s e t V o l t a g e , V I (O F F ) (m V )02550751001255Sink Current, I SINK ( A)O u t p u t V o l t a g e , V o U T (V )4321Output Voltage vs.Sink Current(1mA)(10mA)O p e r a t i n g C u r r e n t , I c c (m A )-500.81.41.21.00-250Ambient Temperature , Ta( )0.60.40.2255075100125Operating Current vs .Temperature-50Ambient Temperature, Ta ( )-25I n p u t B i a s C u r r e n t , I I (B I A S ) (n A )255075100125Input Offset Voltage vs.Temperature 135Source Current , I SOURCE (mA)10203040Source CurrentTYPICAL CHARACTERISTICS(Cont.)M a x i m u m O u t p u t V o l t a g e , V o p p (V )10302010203040Maximum Output VoltageOperating Voltage,V +(V)M a x i m u m O u t p u t V o l t a g e102010-10Mazimum Output Voltage vs.Operating Voltage Operating Voltage, V +/ V (V)--20020M a x i m u m O u t p u t V o l t a g e , V o p p (V )501432100Load Resistance, R L ( )2005001k 2k 5k Maximum Output Voltage Swing vs..Load Resistance 10k-50Ambient Temperature , Ta ()-25I n p u t O f f s e tV o l t a g e , V I (O F F )(m V )255075100125Input Offset Voltage vs.Temperature+V OM (V)-V OM (V)。