METHOD OF DC PULSE SPUTTER DEPOSITION AND FILM FOR

专利名称：METHOD OF DC PULSE SPUTTER
DEPOSITION AND FILM FORMING DEVICE
THEREFOR
发明人：ITSUDO SHIGEFUMI,五戸 成史
申请号：JP2003055286
申请日：20030303
公开号：JP2004266112A
公开日：
20040924
专利内容由知识产权出版社提供
专利附图：
摘要：
PROBLEM TO BE SOLVED: To provide a method of DC pulse sputter deposition which enables deposition ensuring high film performances, for examples, for contact holes,through holes, wiring grooves or the like in respect of film thickness, film qualities or the
like; and to provide a film forming deposition device for the method.
SOLUTION: The sputter deposition device is arranged such that a sputter cathode 4 and a substrate stage 5 for mounting a target 6 and a substrate 7 are provided face to face in a vacuum chamber 1 having a sputtering gas inlet 3 and a vacuum outlet 2. Connection is established in the deposition device between a power source 9 whose output is variable to the stage 5, a DC pulse power source 8 capable of outputting to the cathode 4 according to a duty ratio which is variable under the conditions of constant average power and a control system 10. Reference data are stored beforehand in the control system 10 in respect of two factors, namely, duty ratio of DC pulse voltage at the time of separating the substrate and the target by a predetermined distance under a predetermined substrate bias voltage, and film thickness distribution of films on individual surfaces. In carrying out deposition on the individual surfaces, a duty ratio for making film thicknesses approximately uniform is selected from the reference data to obtain a duty ratio function with the ratio as a variable, and the outputs of the power sources 8 and 9 are controlled using the obtained function.
COPYRIGHT: (C)2004,JPO&NCIPI
申请人：ULVAC JAPAN LTD,株式会社アルバック
地址：神奈川県茅ヶ崎市萩園２５００番地
国籍：JP
代理人：北村 欣一,吉岡 正志
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