5SGA 06D4502中文资料

V DRM= 4500 V I TGQM= 600 A I TSM= 3×103A V T0= 1.9 V r T= 3.5 m W V Dclink= 2800 V Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYDoc. No. 5SYA1236-00 Jun. 04·Patented free-floating silicon technology·Low on-state and switching losses·Central gate electrode·Industry standard housing·Cosmic radiation withstand ratingBlockingMaximum rated values 1)Parameter Symbol Conditions min typ max Unit Repetitive peak off-statevoltageV DRM V GR³ 2 V 4500 VRepetitive peak reversevoltageV RRM17 VPermanent DC voltage for 100 FIT failure rate V Dclink Ambient cosmic radiation at sea levelin open air.2800 VCharacteristic valuesParameter Symbol Conditions min typ max Unit Repetitive peak off-statecurrentI DRM V D = V DRM, V GR³ 2 V 20 mARepetitive peak reversecurrentI RRM V R = V RRM, R GK = ¥ W50 mAMechanical dataMaximum rated values 1)Parameter Symbol Conditions min typ max Unit Mounting force F m 10 11 12 kN Characteristic valuesParameter Symbol Conditions min typ max Unit Pole-piece diameter D p ± 0.1 mm 34 mm Housing thickness H26 mm Weight m0.25 kg Surface creepage distance D s Anode to Gate 30 mm Air strike distance D a Anode to Gate 20.5 mm1) Maximum rated values indicate limits beyond which damage to the device may occur元器件交易网ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.GTO DataOn-stateMaximum rated values 1)ParameterSymbol Conditions min typ max Unit Max. average on-statecurrentI T(AV)MHalf sine wave, T C = 85 °C 210 A Max. RMS on-state current I T(RMS)330A Max. peak non-repetitive surge current I TSM3.1×103A Limiting load integral I 2t t p = 8.3 ms, T vj = 125°C, sine wave After Surge: V D = V R = 0 V40×103A 2s Max. peak non-repetitive surge current I TSM3×103A Limiting load integral I 2t t p = 10 ms, T vj = 125°C, sine wave After Surge: V D = V R = 0 V45×103A 2s Max. peak non-repetitive surge current I TSM6×103A Limiting load integralI 2tt p = 1 ms, T vj = 125°C, sine wave After Surge: V D = V R = 0 V18×103A 2s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage V T I T = 600 A, T vj = 125°C 4 V Threshold voltage V (T0) 1.9 V Slope resistance r T T vj = 125°C I T = 200...600 A 3.5 m W Holding currentI HT vj = 25°C20ATurn-on switchingMaximum rated values 1)ParameterSymbol Conditions min typ max Unit Critical rate of rise of on-state currentdi T /dt cr f = 200 Hz 400 A/µs Critical rate of rise of on-state current di T /dt cr T vj = 125°C,I T = 600 A, I GM = 20 A, di G /dt = 20 A/µs f = 1 Hz600 A/µs Min. on-timet on80 µs Characteristic valuesParameter Symbol Conditions min typ max Unit Turn-on delay time t d 1.5 µs Rise timet r 3 µs Turn-on energy per pulseE onV D = 0.5 V DRM , T vj = 125 °C I T = 600 A, di/dt = 200 A/µs,I GM = 20 A, di G /dt = 20 A/µs, C S = 1 µF, R S = 10 W0.8JTurn-off switchingMaximum rated values 1)ParameterSymbol Conditions min typ max Unit Max. controllable turn-off current Spike Voltage I TGQMV DSP V DM £ V DRM , V D = 0.5 V DRMdi GQ /dt = 20 A/µs, C S = 1 µF, L S £ 0.15 µH, RCD Snubber600£ 650AV Min. off-timet off80 µs Characteristic valuesParameter Symbol Conditionsmin typ max Unit Storage time t S 15 µs Fall timet f 5 µs Turn-on energy per pulse E off 1.9 J Peak turn-off gate current I GQMV D = 0.5 V DRM , T vj = 125 °C V DM £ V DRM , di GQ /dt = 20 A/µs, I TGQ = I TGQM ,R S = 10 W , C S = 1 µF, L S = 0.15 µH RCD Snubber300AGateMaximum rated values 1)ParameterSymbol Conditions min typ max Unit Repetitive peak reversevoltageV GRM17 V Repetitive peak reverse currentI GRMV GR = V GRM20mACharacteristic valuesParameter Symbol Conditions min typ max Unit Gate trigger voltage V GT 1 V Gate trigger currentI GTT vj = 25°C,V D = 24 V, R A = 0.1 W2AThermalMaximum rated values 1)ParameterSymbolConditions min typ max Unit Junction operating temperature T vj 0 125 °C Storage temperature rangeT stg0 125 °C Characteristic valuesParameterSymbol Conditions min typ max Unit R th(jc)Double side cooled50 K/kW R th(jc)A Anode side cooled 85 K/kW Thermal resistance junction to caseR th(jc)C Cathode side cooled122 K/kWR th(ch) Single side cooled 16 K/kW Thermal resistance case to heatsink (Double side cooled) R th(ch)Double side cooled8K/kWAnalytical function for transient thermalimpedance:)e-(1R = (t)Z n1i t/-i thJC iå=ti 1 2 34 R i (K/kW) 15.000 5.200 7.500 0.100t i (s)0.46100.09500.01200.0010Fig. 1 Transient thermal impedance, junction tocase.Fig. 2General current and voltage waveforms with GTO-specific symbols.ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland Ltd Doc. No. 5SYA1236-00 Jun. 04Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, SwitzerlandTelephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.Reverse avalanche capabilityIn operation with an antiparallel freewheeling diode, the GTO reverse voltage V R may exceed the rate value V RRMdue to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR = 10…15 V.。