KO130QA126;中文规格书,Datasheet资料

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NUC130中文手册

3
编号信息列表及管脚名称定义 ................................................................................................... 12
3.1 NuMicro™ NUC130产品选型指南 ................................................................................. 12
3.2.1 NuMicro™ NUC130管脚图 ..............................................................................................13
3.3 管脚功能描述 ................................................................................................................ 16
5.5 I2C 串行接口控制器 (Master/Slave) (I2C)...................................................................... 44
5.5.1 概述.................................................................................................................................44 5.5.2 特征.................................................................................................................................45

MJB45H11G;MJB44H11G;MJB44H11T4G;MJB45H11T4G;MJB44H11;中文规格书,Datasheet资料

tf
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 t, TIME (ms) 5.0 10 20 50
Features
SILICON POWER TRANSISTORS 10 AMPERES, 80 VOLTS, 50 WATTS
MARKING DIAGRAM
Low Collector−Emitter Saturation Voltage −
Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MJB44H11/D

BUK130-50DL,118;中文规格书,Datasheet资料

Philips Semiconductors Product specificationLogic level TOPFETBUK130-50DLSMD version of BUK119-50DLDESCRIPTIONQUICK REFERENCE DATAMonolithic temperature andSYMBOL PARAMETERMAX.UNIT overload protected logic level power MOSFET in TOPFET2 technology V DS Continuous drain source voltage 50V assembled in a 3 pin surface mount I D Continuous drain current 20A plastic package.P D Total power dissipation90W T jContinuous junction temperature 150˚C APPLICATIONSR DS(ON)Drain-source on-state resistance 28m ΩI ISLInput supply currentV IS = 5 V650µAlamps motors solenoids heatersapplications.FEATURESTrenchMOS output stage Current limitingOverload protectionOvertemperature protectionProtection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controllerESD protection on all pins Overvoltage clamping for turn off of inductive loadsPINNING - SOT404PIN CONFIGURATIONSYMBOLPhilips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLLIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN.MAX.UNITVDSContinuous drain source voltage1-50VI D Continuous drain current VIS= 5 V; Tmb=25˚C-self -AlimitedI D Continuous drain current VIS= 5 V; Tmb ≤121˚C-20AIIContinuous input current-55mAIIRMRepetitive peak input currentδ≤ 0.1, tp = 300 µs-5050mAPD Total power dissipation Tmb≤ 25˚C-90WTstgStorage temperature-55175˚CTjContinuous junction temperature2normal operation-150˚CTsoldCase temperature during soldering-260˚C ESD LIMITING VALUESYMBOL PARAMETER CONDITIONS MIN.MAX.UNITVCElectrostatic discharge capacitor Human body model;-2kVvoltage C = 250 pF; R = 1.5 kΩOVERVOLTAGE CLAMPING LIMITING VALUESAt a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN.MAX.UNITInductive load turn-off IDM = 20 A; VDD≤ 20 VEDSM Non-repetitive clamping energy Tmb≤ 25˚C-350mJEDRM Repetitive clamping energy Tmb≤ 95˚C; f = 250 Hz-45mJOVERLOAD PROTECTION LIMITING VALUEWith an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload - overtemperature and short circuit load.SYMBOL PARAMETER REQUIRED CONDITION MIN.MAX.UNITVDS Drain source voltage3 4 V ≤ VIS≤ 5.5 V035VTHERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITThermal resistanceRth j-mbJunction to mounting base-- 1.25 1.39K/WRth j-aJunction to ambient minimum footprint FR4 PCB-50-K/W 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO)the over temperature trip operates to protect the switch.3 All control logic and protection functions are disabled during conduction of the source drain diode.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLOUTPUT CHARACTERISTICSLimits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Off-state VIS= 0 VV(CL)DSS Drain-source clamping voltage ID= 10 mA50--VIDM= 4 A; tp≤ 300 µs; δ≤ 0.01506070VI DSS Drain source leakage current VDS= 40 V--100µATmb= 25˚C-0.110µAOn-state VIS≥ 4.4 V; tp≤ 300 µs; δ≤ 0.01RDS(ON)Drain-source resistance IDM= 10 A--52mΩTmb= 25˚C-2228mΩOVERLOAD CHARACTERISTICSVIS = 5 V; Tmb= 25˚C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Short circuit loadI D Drain current limiting VDS= 13 V28.54357A4.4 V ≤ VIS≤ 5.5 V;21-65A-40˚C ≤ Tmb≤ 150˚COverload protectionPD(TO)Overload power threshold device trips if PD> PD(TO)75185250WTDSCCharacteristic time which determines trip time1200380600µsOvertemperature protectionTj(TO)Threshold junction150170-˚C temperature21 Trip time td sc varies with overload dissipation PDaccording to the formula td sc≈ TDSC/ ln[ PD/ PD(TO)].2 This is independent of the dV/dt of input voltage VIS.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLINPUT CHARACTERISTICSThe supply for the logic and overload protection is taken from the input.Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITVIS(TO)Input threshold voltage VDS= 5 V; ID= 1 mA0.6- 2.4VTmb= 25˚C 1.1 1.6 2.1VI IS Input supply current normal operation; VIS= 5 V100220400µAVIS= 4 V80195330µAI ISL Input supply current protection latched; VIS= 5 V200400650µAVIS= 3 V130250430µAVISR Protection reset voltage1reset time tr≥ 100 µs 1.52 2.9Vt lr Latch reset time VIS1= 5 V, VIS2< 1 V1040100µsV(CL)IS Input clamping voltage II= 1.5 mA 5.5-8.5VRIG Input series resistance2Tmb= 25˚C-33-kΩto gate of power MOSFETSWITCHING CHARACTERISTICST mb = 25˚C; VDD= 13 V; resistive load RL= 4 Ω. Refer to waveform figure and test circuit.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITtd on Turn-on delay time VIS= 5 V-2550µstrRise time-50100µstd off Turn-off delay time VIS= 0 V-60120µstfFall time-50100µs1 The input voltage below which the overload protection circuits will be reset.2 Not directly measureable from device terminals.Philips Semiconductors Product specificationLogic level TOPFETBUK130-50DLSMD version of BUK119-50DLMECHANICAL DATA1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.4 gFor soldering guidelines and SMD footprint design, please refer to Data Handbook SC18.Philips Semiconductors Product specification Logic level TOPFET BUK130-50DL SMD version of BUK119-50DLDEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS1STATUS2Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without noticePreliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in ordere to improve the design and supply the best possibleproductProduct data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650ALimiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.Philips Electronics N.V. 2001All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.1 Please consult the most recently issued datasheet before initiating or completing a design.2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information isavailable on the Internet at URL .分销商库存信息: NXPBUK130-50DL,118。

1439-3;1439-4;中文规格书,Datasheet资料

PLATING Gold/Gold Tin/Tin Tin/Gold
PLATING OPTIONS
CONTACT
BODY SPRING
Gold
Gold
Tin/Lead Tin/Lead
Tin/ Lead
Gold
RoHS Compliant
Non-Compliant
.015 (.38) - .021 (.53) PIN - PRESS FIT
contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar miniature components • Custom micro jacks manufactured to your specifications • Other platings available upon request
1641A 1641B 1641C .122 (3.1)
NON-RoHS
Mtg.
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1697 1698 1699 .063 (1.60)
.025 (.64) - .037 (.94) PIN - SOLDER MOUNT
6-FINGER CLOSED ENTRY CONTACT
GOLD/GOLD TIN/TIN TIN/GOLD Hole
CAT. NO. CAT. NO. CAT. NO. Dia.
1603 1606 1607 .052 (1.32)

KA5M0365RTU;KA5M0380RYDTU;KA5L0380RYDTU;KA5H0365RTU;KA5M0365RYDTU;中文规格书,Datasheet资料

Total Power Dissipation
Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range.
Symbol
VDGR VGS IDM
ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG
VDGR VGS IDM
ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG
Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13μH, starting Tj = 25°C
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range

KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS)

杭州克柔姆色谱 GC-126LQ 燃气专用气相色谱仪(Chrom Technologies) 说明书

ChromG c.杭州克柔姆色谱科技有限公司产品名称:GC-126LQ燃气专用气相色谱仪(Chrom Technologies)系统依据的标准:GB/T 11062-1998《天然气发热量、密度、平均密度和沃泊指数的计算方法》 SH/T 0230-92《液化石油气组成测定法（色谱法）》GB/T 13610-2003《天然气的组成分析气相色谱法》GB/T 12206-2006《城市燃气热值和相对密度测定方法》GB 10410.1-89《人工煤气组分气相色谱分析法》GB 10410.2-89《天然气常量组分气相色谱分析法》GB 10410.3-89《液化石油气组分气相色谱分析法》产品成套意义与目的:一:城市燃气的检测天然气、液化气、煤气（含焦炉煤气、高炉煤气、转炉煤气、人工煤气、水煤气、半水煤气等）是和人们生产、生活息息相关的气体，广泛应用于家用燃气、石化、冶金、精细化工等领域。

通过分析以上各种气体的组成及其各组份的含量，计算其热值有着重要的意义。

GC-126LQ气相色谱仪提供了最佳的解决途径，通过色谱柱把复杂组分进行分离，使用高灵敏度检测器进行定量，在几分钟之内，就能准确计算出各组份得含量并得出热值。

二: 炼厂气的检测随着炼油工艺的发展和加工深度的提高，原油加工过程中副产的大量气体即炼厂气的产量也随之增加。

炼厂气的综合利用已经成为提高炼厂经济效益的重要环节。

众所周知炼厂气是生产石油化工产品的宝贵原料，而了解炼厂气的组成是综合利用的前提，所以建立健全炼厂气的分析方法具有极其重要的意义。

炼厂气的主要组成包括氢气，C1~C5烷烃，C2~C4烯烃和少量C5烷、烯及一些杂质如H2S、CO、CO2,在一些特殊加工过程中还会产生二烯及少量炔烃。

三:新能源二甲醚检测随着能源的日趋紧张和石油价格的高企，寻找替代能源已经成为国家的战略方向，二甲醚作为清洁的替代燃料已经得到国内外广泛的关注，特别是其替代煤气、LPG和柴油方面所具有的巨大的市场潜力，对我国能源结构的调整、环境保护等方面有着重要的现实意义。

126KV组合电器货物需求一览表及技术规格讲解

126KV组合电器货物需求⼀览表及技术规格讲解126KV组合电器货物需求⼀览表及技术规格1 总则1.1对设计图纸、说明书和试验报告的要求1.1.1图纸及图纸的认可程序：1.所有需经买⽅确认的图纸和说明⽂件，均应由卖⽅在合同⽣效后的 4 周内提交给买⽅进⾏审定认可。

这些资料包括 GIS 的隔室分布图、布置图、基础图、电⽓原理图、运输尺⼨、运输质量、及⼆次原理图等。

买⽅审定时有权提出修改意见。

买⽅在收到需认可图纸 2 周后，将⼀套确认的或签有买⽅校定标记的图纸（买⽅负责⼈签字）返还给卖⽅。

凡买⽅认为需要修改且经卖⽅认可的，不得对买⽅增加费⽤。

在未经买⽅对图纸作最后认可前任何采购或加⼯的材料损失应由卖⽅单独承担。

2.卖⽅在收到买⽅确认图纸（包括认可⽅修正意见）后，应于 2 周内向买⽅提供最终版的正式图纸和⼀套供复制⽤的底图，正式图纸必须加盖⼯⼚公章或签字。

3.完⼯后的产品应与最后确认的图纸⼀致。

买⽅对图纸的认可并不减轻卖⽅关于其图纸的正确性的责任。

设备在现场安装时，如卖⽅技术⼈员进⼀步修改图纸，卖⽅应对图纸重新收编成册，正式递交买⽅，并保证安装后的设备与图纸完全相符。

4.图纸的格式：所有图纸均应有标题栏、相应编号、全部符号和部件标志，⽂字均⽤中⽂，并使⽤SI国际单位制。

对于进⼝设备以中⽂为主，当买⽅对英⽂局部有疑问时，卖⽅应进⾏书⾯解释。

卖⽅免费提供给买⽅全部最终版的图纸、资料及说明书。

其中图纸应包括 1.1.4.款所涉及的图纸和卖⽅⾃带的电缆清册，并且应保证买⽅可按最终版的图纸资料对所供设备进⾏维护。

5. GIS所需图纸：1)总体装配图：应表⽰设备总的装配情况，该图纸表明设备组装后的正视图、侧视图和俯视图并同时标出安装完后的组件，包括外形尺⼨、设备重⼼位置与总质量、受风⾯积、运输尺⼨和质量、体积和总装体积、控制柜位置、电缆⼊⼝位置、端⼦尺⼨和材料及其他附件。

2)控制柜与设备间的相互连接图：应包括控制柜内全部端⼦情况，并标明电缆的识别编号及柜内设备的⼤致位置。

SFH 225 FA;中文规格书,Datasheet资料

SFH 225 FASilizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight FilterLead (Pb) Free Product - RoHS Compliant2007-04-021Wesentliche Merkmale •Speziell geeignet für Anwendungen bei 880 nm •Kurze Schaltzeit (typ. 20 ns)• 5 mm-Plastikbauform im LED-Gehäuse •Auch gegurtet lieferbarAnwendungen•IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Videorecordern,Lichtdimmern und Gerätefernsteuerungen •Lichtschranken für Gleich- und WechsellichtbetriebTyp Type Bestellnummer Ordering Code SFH 225 FAQ62702P1051Features •Especially suitable for applications of 880 nm •Short-switching time (typ. 20 ns)• 5 mm LED plastic package•Also available on tape and reelApplications•IR-remote control of hi-fi and TV sets, video tape recorders, dimmers, remote control of various equipment •PhotointerruptersGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … + 100°CSperrspannung Reverse voltage VR20VVerlustleistung, T A = 25 °C Total power dissipation Ptot150mWKennwerte (T A = 25 °C, λ = 870 nm) CharacteristicsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotostrom PhotocurrentV R = 5 V, E e = 1 mW/cm2IP34 (≥ 25)μAWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max900nmSpektraler Bereich der FotoempfindlichkeitS = 10 % von SmaxSpectral range of sensitivityS = 10 % of Smaxλ740 … 1120nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 4.84mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W2.20 × 2.20mm × mmHalbwinkel Half angle ϕ± 60Graddeg.Dunkelstrom, V R = 10 V Dark current IR2 (≤ 30)nASpektrale Fotoempfindlichkeit Spectral sensitivity Sλ0.63A/WQuantenausbeute Quantum yield η0.90ElectronsPhotonLeerlaufspannung, E e = 0.5 mW/cm2 Open-circuit voltage VO330 (≥ 250)mV2007-04-0222007-04-023Kurzschlußstrom, E e = 0.5 mW/cm 2 Short-circuit currentI SC 17μA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 50 Ω; V R = 5 V; λ = 850 nm; I p = 800 μA t r , t f20nsDurchlaßspannung, I F = 100 mA, E = 0 Forward voltageV F 1.3V Kapazität, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 048pF Temperaturkoeffizient von V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient von I SC Temperature coefficient of I SCTC I 0.18%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 VNEP3.6 × 10– 14Nachweisgrenze, V R = 10 V Detection limitD*6.1 × 1012Kennwerte (T A = 25 °C, λ = 870 nm) Characteristics (cont’d)Bezeichnung ParameterSymbol SymbolWert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2007-04-024Relative Spectral SensitivityDark CurrentPhotocurrent I P = f (E e ), V R = 5 VCapacitanceTotal Power Dissipation Dark CurrentMaßzeichnungPackage OutlinesMaße in mm (inch) / Dimensions in mm (inch).LötbedingungenSoldering ConditionsWellenlöten (TTW)(nach CECC 00802)2007-04-025OSRAM Opto Semiconductors GmbHWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2007-04-026分销商库存信息: OSRAMSFH 225 FA。

APHB1608ZGSYKC;中文规格书,Datasheet资料

பைடு நூலகம்
Notes: 1.Wavelength: +/-1nm. 2. Forward Voltage: +/-0.1V. *Wavelength value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
DATE: APR/20/2012 DRAWN: D.M.Su
PAGE: 3 OF 6 ERP: 1203011312
/
Super Bright Yellow
SPEC NO: DSAK7902 APPROVED: WYNEC
REV NO: V.5A CHECKED: Allen Liu
Description
The Green source color devices are made with InGaN on Sapphire Light Emitting Diode. The Super Bright Yellow device is made with AlGaInP (on GaAs substrate) light emitting diode chip. Static electricity and surge damage the LEDS. It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs. All devices, equipment and machinery must be electrically grounded.
Green 102.5 25 150 5

UTS1JC124S;UTS0124P;UTS1JC104P;UTS1JC124P;UTS6JC18-32P;中文规格书,Datasheet资料

• pollution degree of the environment: - PD2 means only non conductive pollution occurs except that
occasionally a temporary conductivity caused by condensation is to be expected - PD3 means conductive pollution occurs or dry non conductive pollution occurs which becomes conductive due to condensation which is to be expected
- OV3 means a 2500V rated impulse voltage
U Nm* is not the working voltage. U Nm* has to be chosen according to the voltage of the power supply Un.
*Definition of U Nm rated insulation voltage (EN 50-1 24-1): r.m.s. withstand voltage value assigned by the manufacturer to the equipment or to a part of it, characterizing the specified (long-term) withstand capability of its insulation. NOTE: The rated insulation voltage is not necessarily equal to the-rated voltage of equipment which is primarily related to functional performance.

1451-015G-T;1451-100A-N;1451-100A-W;1451-100G-T;1451-050A-N;中文规格书,Datasheet资料

MS1451∙PC Board Mountable Pressure Sensor∙0-60 mV Output∙Gage and Absolute∙Low CostDESCRIPTIONThe MS1451 is a piezoresistive silicon pressure sensor packaged in a surface mount configuration. It is intended for high volume applications where small size, light weight, low cost, and compatibility with automated assembly equipment are required.The pressure sensor is available with a gage or absolute pressure sensing chip that is attached to a surface mountable ceramic substrate. A plastic cap is attached to the ceramic substrate, protecting the chip and providing the pressure port.The devices are shipped in plastic anti-static shipping tubes for use with automated production equipment. The drawing shows a standard tube version. Ports are also available with a narrow hole or a large hole to interface with the pressure media.FEATURES APPLICATIONS∙Surface Mount Package∙Altitude Measurement∙±0.25% Pressure Non Linearity∙Barometric Pressure∙ 3 Pressure Port Options∙Medical Instrumentation∙Solid State Reliability∙Consumer Appliances∙Low Power∙Tire PressureSTANDARD RANGESRange psia psig0 to 5 W, N, T0 to 15 W, N, T W, N, T0 to 30 W, N, T W, N, T0 to 50 W, N, T W, N, T0 to 100 W, N, T W, N, T0 to 250 W, N0 to 500 W, NPort Options:W = Wide Hole (Gel Fill option available), N = Narrow Hole, T = TubeMS1451June 20112/4PERFORMANCE SPECIFICATIONSSupply Voltage: 3 VdcAmbient Temperature: 25°C (unless otherwise specified)PARAMETERS MIN TYP MAX UNITS NOTES Span30 60 120 mV 1 Zero Pressure Output -25 25 mV Pressure Non Linearity -0.25 0.25 %Span 2 Pressure Hysteresis -0.1 0.1 %Span Input & Output Resistance 3500 5000 6000 Ω Temperature Coefficient – Span -0.13 %/°C 3 Temperature Coefficient – Zero 0.05 %/°C 3 Temperature Coefficient – Resistance 0.15 %/°C 3 Thermal Hysteresis – Zero -0.2 0.2 %Span 3 Supply Voltage3.0 12.0 Vdc Response Time (10% to 90%) 1.0 mS 4 Output Noise (10Hz to 1kHz) 1.0 µV p-p Long Term Stability (Offset & Span) 0.5 %Span 5 Pressure Overload 3X Rated 6 Operating Temperature -40 +125 °C Storage Temperature -50 +150 °C Weight0.3gramsSoldering Temperature 250°C Max 5 Sec.7 MediaNon-Corrosive Dry Gases Compatible with Silicon, Pyrex, RTV, Gold,LCP (Liquid Crystal Polymer), and AluminumNotes 1. Ratiometric to supply voltage. 2. Best fit straight line. 3. Over the temperature range 0-50°C with respect to 25°C. 4. For a zero-to-full scale pressure step change. 5. Long term stability over a one year period with constant voltage and temperature. 6. For sensors above 100 psi, the entire sensor is required to be inside the pressure chamber. 7. For mounting instructions, please refer to the application note “Mounting Instructions for SMT Pressure Sensors.”分销商库存信息:MEASUREMENT-SPECIALTIES1451-015G-T1451-100A-N1451-100A-W 1451-100G-T1451-050A-N1451-030G-T 1451-015A-N1451-030A-W1451-005G-T 1451-050G-T1451-050A-W1451-005A-W 1451-015A-W1451-030A-N。

050 HR;中文规格书,Datasheet资料

∙ High Reliability∙ Large core-to-bore clearance∙ Operating temperature up to 220°C (option) ∙ Stroke ranges from ± 0.05 to ±10 inches ∙ AC operation from 400Hz to 5kHz ∙Stainless steel housing∙ Imperial or metric threaded core ∙Many options and accessoriesDESCRIPTIONThe HR Series general purpose LVDTs provide the optimum performance required for a majority of applications. The large 1/16 inch [1.6mm] bore-to-core radial clearance provides for ample installation misalignments and therefore reduces the application costs. Featuring a high output voltage and a broad operating frequency range, these versatile and highly reliable LVDTs deliver worry-free and precise position measurements.Available in a variety of stroke ranges from ±0.05 to ±10 inches, the HR Series can be configured with a numberof standard options including guided core, small diameter/low mass core and mild radiation resistance (1012NVT total integrated flux; 107rads Gamma). High temperature operation (+220ºC) and high pressure (vented case) versions are also available (consult factory). The HR Series is compatible with the full line of Measurement Specialties LVDT signal conditioners.Like in most of our LVDTs, the HR windings are vacuum impregnated with a specially formulated, high temperature, flexible resin, and the coil assembly is potted inside its housing with a two-component epoxy. This provides excellent protection against hostile environments such as high humidity, vibration and shock.Measurement Specialties, Inc. (NASDAQ MEAS) offers many other types of sensors and signal conditioners. Data sheets can be downloaded from our web site at: /datasheets.aspxMEAS acquired Schaevitz Sensors and the Schaevitz ®trademark in 2000.FEATURESAPPLICATIONS∙ 0.25% linearity (100% stroke)∙ Process control ∙ Large 1/16” core -to-bore clearance ∙ Factory automation ∙ Shock and vibration tolerant∙ Materials testing ∙ Electromagnetic/electrostatic shielding ∙ Metrology∙ Mild radiation resistance (optional)∙ Applications with large misalignments ∙Calibration certificate supplied with each unit∙General industrialPERFORMANCE SPECIFICATIONSNotes:Dimensions are in inch [mm]All values are nominal unless otherwise notedElectrical specifications are for the test frequency indicated in the tableFR: Full Range is the stroke range, end to end; FR=2xS for ±S stroke rangeFSO (Full Scale Output): Largest absolute value of the outputs measured at the ends of the range ** Requires special reduced core length(*) Unit for output at stroke ends is millivolt per volt of excitation (input voltage)MECHANICAL SPECIFICATIONSDimensions are in inch [mm]WIRING INFORMATIONConnect blue (BLU) to green (GRN) for differential outputORDERING INFORMATIONNote: Add multiple option dash numbers together to determine proper ordering suffixExample: HR 1000, ±1 inch, with 5 kHz calibration and mild radiation resistance, P/N 02560395-082Refer to our “ Accessories for LVDTs ”TECHNICAL CONTACT INFORMATIONThe information in this sheet has been carefully reviewed and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of such devices any license under the patent rights to the manufacturer. Measurement Specialties, Inc. reserves the right to make changes without further notice to any product herein. Measurement Specialties, Inc. makes no warranty, representation or guarantee regarding the suitability of its product for any particular purpose, nor does Measurement Specialties, Inc. assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different分销商库存信息: MEASUREMENT-SPECIALTIES 050 HR。

DS1603;中文规格书,Datasheet资料

Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be simultaneously available through various sales channels. For information about device errata, click here: /errata .FEATURES§ Two 32-bit counters keep track of real -time and elapsed time§ Counters keep track of seconds for over 125 years§ Battery powered counter counts seconds from the time battery is attached until V BAT is less than 2.5V§ V CC powered counter counts seconds while V CC is above V TP and retains the count in the absence of V CC under battery backup power § Clear function resets selected counter to 0 § Read/write serial port affords low pin count § Powered internally by a lithium energy cell that provides over 10 years of operation§ One-byte protocol defines read/write, counter address and software clear function§ Self-contained crystal provides an accuracy of ±2 min per month§ Operating temperature range of 0°C to +70°C § Low-profile SIP module§ Underwriters Laboratory (UL) recognized PIN ASSIGNMENTPIN DESCRIPTIONRST- Reset CLK - ClockDQ - Data Input/Output GND - Ground V CC - +5VOSC - 1Hz Oscillator Output NC- No ConnectDESCRIPTIONThe DS1603 is a real -time clock/elapsed time counter designed to count seconds when V CC power is applied and continually count seconds under battery backup power with an additional counter regardless of the condition of V CC . The continuous counter can be used to derive time of day, week, month, and year by using a software algorithm. The V CC powered counter will automatically record the amount of time that V CC power is applied. This function is particularly useful in determining the operational time of equipment in which the DS1603 is used. Alternatively, this counter can also be used under software control to record real -time events. Communication to and from the DS1603 takes place via a 3-wire serial port. A 1-byte protocol selects read/ write functions, counter clear functions and oscillator trim. The device contains a 32.768kHz crystal that will keep track of time to within ±2 min/mo. An internal lithium energy source contains enough energy to power the continuous seconds counter for over 10 years.OPERATIONThe main elements of the DS1603 are shown in Figure 1. As shown, communications to and from the elapsed time counter occur over a 3-wire serial port. The port is activated by driving RST to a high state.V CC RST DQ NC CLK OSC GND DS1603Elapsed Time Counter Moduleselect, register clear, and oscillator trim information. Each bit is serially input on the rising edge of the clock input. After the first eight clock cycles have loaded the protocol register with a valid protocol additional clocks will output data for a read or input data for a w rite. V CC must be present to access the DS1603. If V CC < V TP, the DS1603 will switch to internal power and disable the serial port to conserve energy. When running off of the internal power supply, only the continuous counter will continue to count and the counter powered by V CC will stop, but retain the count, which had accumulated when V CC power was lost. The 32-bit V CC counter is gated by V CC and the internal 1Hz signal.PROTOCOL REGISTERThe protocol bit definition is shown in Figure 2. Valid protocols and the resulting actions are shown in Table 1. Each data transfer to the protocol register designates what action is to occur. As defined, the MSB (bit 7 which is designated ACC) selects the 32-bit continuous counter for access. If ACC is a logical 1 the continuous counter is selected and the 32 clock cycles that follow the protocol will either read or write this counter. If the counter is being read, the contents will be latched into a different register at the end of protocol and the latched contents will be read out on the next 32 clock cycles. This avoids reading garbled data if the counter is clocked by the oscillator during a read. Similarly, if the counter is to be written, the data is buffered in a register and all 32 bits are jammed into the counter simultaneously on the rising edge of the 32nd clock. The next bit (bit 6 which is designated AVC) selects the 32–bit V CC active counter for access. If AVC is a logical 1 this counter is selected and the 32 clock cycles that follow will either read or write this counter. If both bit 7 and bit 6 are written to a logic high, all clock cycles beyond the protocol are ignored and bit 5, 4, and 3 are loaded into the oscillator trim register. A value of binary 3 (011) will give a clock accuracy of ±120 seconds per month at +25°C. Increasing the binary number towards 7 will cause the real-time clock to run faster. Conversely, lowering the binary number towards 0 will cause the clock to run slower. Binary 000 will stop the oscillator completely. This feature can be used to conserve battery life during storage. In this mode the internal power supply current is reduced to 100 nA maximum. In applications where oscillator trimming is not practical or not needed, a default setting of 011 is recommended. Bit 2 of protocol (designated CCC) is used to clear the continuous counter. When set to logic 1, the continuous counter will reset to 0 when RST is taken low. Bit 1 of protocol (designated CVC) is used to clear the V CC active counter. When set to logical 1, the V CC active counter will reset to 0 when RST is taken low. Both counters can be reset simultaneously by setting CCC and CVC both to a logical 1. Bit 0 of the protocol (designated RD) determines whether the 32 clocks to follow w ill write a counter or read a counter. When RD is set to a logical 0 a write action will follow when RD is set to a logical 1 a read action will follow. When sending the protocol, 8 bits should always be sent. Sending less than 8 bits can produce erroneous results. If clearing the counters or trimming the oscillator, the data transfer can be terminated after the 8-bit protocol is sent. However, when reading or writing the counters, 32 clock cycles should always follow the protocol.RESET AND CLOCK CONTROLAll data transfers are initiated by driving the RST input high. The RST input has two functions. First, RST turns on the serial port logic, which allows access to the protocol register for the protocol data entry. Second, the RST signal provides a method of terminating the protocol transfer or the 32-bit counter transfer. A clock cycle is a sequence of a rising edge followed by a falling edge. For write inputs, data must be valid during the rising edge of the clock. Data bits are output on the falling edge of the clock when data is being read. All data transfers terminate if the RST input is transitioned low and the DQ pin goes to a high-impedance state. RST should only be transitioned low while the clock is high to avoid disturbing the last bit of data. All data transfers must consist of 8 bits when transferring protocol only or 8 + 32 bits when reading or writing either counter. Data tran sfer is illustrated in Figure 3.DATA INPUTFollowing the 8-bit protocol that inputs write mode, 32 bits of data are written to the selected counter on the rising edge of the next 32 CLK cycles. After 32 bits have been entered any additional CLK cycles will be ignored until RST is transitioned low to end data transfer and then high again to begin new data transfer.DATA OUTPUTFollowing the eight CLK cycles that input read mode protocol, 32 bits of data will be output from the selected counter on the next 32 CLK cycles. The first data bit to be transmitted from the selected 32-bit counter occurs on the falling edge after the last bit of protocol is written. When transmitting data from the selected 32-bit counter, RST must remain at high level as a transition to low level will terminate data transfer. Data is driven out the DQ pin as long as CLK is low. When CLK is high the DQ pin is tristated. OSCILLATOR OUTPUTPin 6 of the DS1603 module is a 1Hz output signal. This signal is present only when V CC is applied and greater than the internal power supply. However, the output is guaranteed to meet TTL requirement only while V CC is within normal limits. This output can be used as a 1-second interrupt or time tick needed in some applications.INTERNAL POWERThe internal battery of the DS1603 module provides 35mAh and will run the elapsed time counter for over 10 years in the absence of power.PIN DESCRIPTIONSV CC, GND – DC power is provided to the device on these pins. V CC is the +5V input. When 5V is applied within normal limits, the device is fully accessible and data can be written and read. When a 3V battery is connected to the device and V CC is below 1.25 x V BAT, reads and writes are inhibited. As V CC falls below V BAT the continuous counter is switched over to the internal battery.CLK (Serial Clock Input) – CLK is used to synchronize data movement on the serial interface.DQ (Data Input/Output) – The DQ pin is the bi-directional data pin for the 3-wire interface.RST (Reset) – The reset signal must be asserted high during a read or a write.OSC (One Hertz Output Signal) – This signal is only present when Vcc is at a valid level and the oscillator is enabled.Figure 1. ELAPSED TIME COUNTER BLOCK DIAGRAMFigure 2. PROTOCOL BIT MAP7 6 5 4 3 2 1 0ACC AVC OSC2 OSC1 OSC0 CCC CVC RDTable 1. VALID PROTOCOLSPROTOCOLACTIONACC AVC OSC2 OSC1 OSC0 CCC CVC RDFUNCTION ReadContinuous Counter 1 0 X X X X X 1Output continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.WriteContinuous Counter 1 0 X X X X X 0Input data to continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.Read V CCActive Counter 0 1 X X X X X 1Output V CC activecounter on the 32 clocksfollowing protocol,oscillator trim registeris not updated. Countersare not reset.Write V CCActive Counter 0 1 X X X X X 0Input data to continuouscounter on the 32 clocksfollowing protocol.Oscillator trim registeris not updated. Countersare not reset.ClearContinuous Counter 0 0 X X X 1 X XResets the continuouscounter to all zeros atthe end of protocol.Oscillator trim registeris not updated.Clear V CCActive Counter 0 0 X X X X 1 XResets the V CC activecounter to all zeros atthe end of protocol.Oscillator trim registeris not updated.Set Oscillator Trim Bits 1 1 A B C X X 0Sets the oscillator trimregister to a value ofABC. Counters areunaffected.X = Don’t CareFigure 3. DATA TRANSFERTIMING DIAGRAM: READ/WRITE DATA TRANSFERNote: t CL, t CH, t R, and t F apply to both read and write data transfer.ABSOLUTE MAXIMUM RATINGSVoltage Range on Any Pin Relative to Ground -0.3V to +7.0VOperating Temperature Range 0°C to +70°CStorage Temperature Range -40°C to +70°CSoldering Temperature Range See IPC/JEDEC J-STD-020A (See Note 11)This is a stress rating only and functional operation of the device at these or any other conditions beyond t h ose indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect reliability.RECOMMENDED DC OPERATING CONDITIONS (0°C to +70°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Supply Voltage V CC 4.5 5.0 5.5 V 1 Logic 1 Input V IH 2.0 V CC + 0.3 V 1 Logic 0 Input V IL-0.3 0.8 V 1DC ELECTRICAL CHARACTERISTICS (0°C to +70°C; V CC = 5V ±10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Leakage I LI-1 +1 µAI/O Leakage I LO-1 +1 µALogic 1 Output V OH 2.4 V 2 Logic 0 Output V OL0.4 V 3 Active Supply Current I CC 1 mA 4 Timekeeping Current I CC150 µA 5 Battery Trip Point V TP 3.0 4.5 V 9 CAPACITANCE (T A = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance C I 5 pFI/O Capacitance C I/O10 pF(T A = +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Expected Datat DR10 years 10 Retention TimeNOTES:1) All voltages are referenced to ground.2) Logic 1 voltages are specified at a source current of 1mA.3) Logic 0 voltages are specified at a sink current of 4mA.4) I CC is specified with the DQ pin open.5) I CC1 is specified with V CC at 5.0V and RST = GND.6) Measured at V IH= 2.0V or V IL = 0.8V.7) Measured at V OH = 2.4V or V OL - 0.4V.8) Load capacitance = 50pF.9) Battery trip point is the point at which the V CC powered counter and the serial port stops operation.The battery trip point drops below the minimum once the internal lithium energy cell is exhausted. 10) The expected t D R is defined as accumulative time in the absence of V CC with the clock oscillatorrunning.11) Real-time clock modules can be successfully processed through conventional wave-solderingtechniques as long as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not used.DS1603DS1603 7-PIN MODULEPKG7-PIN DIM MIN MAX A IN. MM 0.830 21.08 0.850 21.59 B IN. MM 0.650 16.51 0.670 17.02 C IN. MM 0.310 7.87 0.330 8.38 D IN. MM 0.015 0.38 0.030 0.76 E IN. MM 0.110 2.79 0.140 3.56 F IN. MM 0.015 0.38 0.021 0.53 G IN. MM 0.090 2.29 0.110 2.79 H IN. MM 0.105 2.67 0.135 3.43 J IN. MM 0.360 9.14 0.390 9.91分销商库存信息: MAXIMDS1603。

SFH 221;中文规格书,Datasheet资料

SFH 221Silizium-Differential-Fotodiode Silicon Differential PhotodiodeLead (Pb) Free Product - RoHS Compliant2007-04-031Wesentliche Merkmale•Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm •Hohe Fotoempfindlichkeit•Hermetisch dichte Metallbauform (ähnlich TO-5), geeignet bis 125 °C 1)•Doppeldiode von extrem hoher Gleichmäβigkeit Anwendungen •Nachlaufsteuerungen •Kantenführung •Industrieelektronik•…Messen/Steuern/Regeln“1)Eine Abstimmung der Einsatzbedingungen mit dem Hersteller wird empfohlen bei T A > 85 °C1)For operating conditions of T A > 85 °C please contact us.Typ Type Bestellnummer Ordering Code SFH 221Q62702P0270Features•Especially suitable for applications from 400 nm to 1100 nm •High photosensitivity•Hermetically sealed metal package (similar to TO-5), suitable up to 125 °C 1)•Double diode with extremely high homogeneousness Applications •Follow-up controls •Edge drives•Industrial electronics•For control and drive circuitsGrenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebs- und Lagertemperatur Operating and storage temperature range Top; T stg– 40 … + 125°CSperrspannung Reverse voltage VR10VIsolationsspannung gegen Gehäuse Insulation voltage vs. package VIS100VVerlustleistung, T A = 25 °C Total power dissipation Ptot50mWKennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede Einzeldiode Characteristics (T A = 25 °C, standard light A, T = 2856 K) per single diodeBezeichnung Parameter SymbolSymbolWertValueEinheitUnitFotoempfindlichkeit, V R = 5 VSpectral sensitivityS24 (≥ 15)nA/IxWellenlänge der max. FotoempfindlichkeitWavelength of max. sensitivityλS max900nmSpektraler Bereich der FotoempfindlichkeitS = 10% von SmaxSpectral range of sensitivityS = 10% of Smaxλ400 … 1100nmBestrahlungsempfindliche FlächeRadiant sensitive areaA 1.54mm2Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×BL×W0.7 × 2.2mm²Halbwinkel Half angle ϕ± 55Graddeg.Dunkelstrom, V R = 10 V Dark current IR10 (≤ 100)nASpektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ0.55A/W2007-04-0322007-04-033Maximale Abweichung der Fotoempfindlichkeit vom MittelwertMax. deviation of the system spectral sensitivity from the averageΔS± 5%Quantenausbeute, λ = 850 nm Quantum yieldη0.80Electrons Photon Leerlaufspannung, E v = 1000 Ix Open-circuit voltageV O 330 (≥ 280)mV Kurzschlu βstrom, E v = 1000 Ix Short-circuit current I SC 24μA Isolationsstrom, V IS = 100 V Insulation currentI IS 0.1 (≤ 1)nA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrentR L = 1 k Ω; V R = 5 V; λ = 850 nm; I p = 25 μA t r , t f500nsDurchla βspannung, I F = 40 mA, E = 0 Forward voltageV F 1.0V Kapazität, V R = 0 V, f = 1 MHz, E = 0 CapacitanceC 025pF Temperaturkoeffizient für V O Temperature coefficient of V O TC V – 2.6mV/K Temperaturkoeffizient für I SC Temperature coefficient of I SCTC I 0.18%/K Rauschäquivalente Strahlungsleistung Noise equivalent power V R = 10 V, λ = 850 nmNEP1.0 × 10–13Nachweisgrenze, V R = 10 V, λ = 850 nm Detection limitD*1.2 × 1012Kennwerte (T A = 25 °C, Normlicht A, T = 2856 K) für jede EinzeldiodeCharacteristics (T A = 25 °C, standard light A, T = 2856 K) per single diode (cont’d)Bezeichnung ParameterSymbol Symbol Wert Value Einheit Unit W Hz -----------cm Hz ×W--------------------------2007-04-034OPTO SEMICONDUCTORSRelative Spectral SensitivityDark CurrentDirectional Characteristics S Photocurrent I P = f (Ev ), VR = 5 V CapacitanceTotal Power Dissipation Dark CurrentMaßzeichnungPackage OutlinesMaße in mm (inch) / Dimensions in mm (inch).2007-04-035LötbedingungenSoldering ConditionsWellenlöten (TTW)(nach CECC 00802)TTW Soldering(acc. to CECC 00802)OSRAM Opto Semiconductors GmbHWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.2007-04-036分销商库存信息: OSRAMSFH 221。

MAX5921EESA+;MAX5921FESA+;MAX5921AESA+;MAX5921BESA+;MAX5939EESA+T;中文规格书,Datasheet资料

General DescriptionThe MAX5921/MAX5939 hot-swap controllers allow a cir-cuit card to be safely hot plugged into a live backplane.The MAX5921/MAX5939 operate from -20V to -80V and are well suited for -48V power systems. These devices are pin compatible with both the LT1640 and LT4250 and provide improved features over these devices.The MAX5921/MAX5939 provide a controlled turn-on to circuit cards preventing damage to board connectors,board components, and preventing glitches on the power-supply rail. The MAX5921/MAX5939 provide undervoltage, overvoltage, and overcurrent protection.These devices ensure that the input voltage is stable and within tolerance before applying power to the load.Both the MAX5921 and MAX5939 protect a system against overcurrent and short-circuit conditions by turn-ing off the external MOSFET in the event of a fault con-dition. The MAX5921/MAX5939 protect against input voltage steps by limiting the load current to a safe level without turning off power to the load.The device features an open-drain power-good status output, PWRGD or PWRGD for enabling downstream converters (see Selector Guide ). A built-in thermal shut-down feature is also included to protect the external MOSFET in case of overheating. The MAX5939 features a latched fault output. The MAX5921 contains built-in autoretry circuitry after a fault condition.The MAX5921/MAX5939 are available in an 8-pin SO package and operate in the extended -40°C to +85°C temperature range.ApplicationsTelecom Line Cards Network Switches/Routers Central-Office Line Cards Server Line Cards Base-Station Line CardsFeatures♦Allows Safe Board Insertion and Removal from a Live -48V Backplane ♦Pin-Compatible with LT1640 and LT4250♦Circuit Breaker Immunity to Input Voltage Steps and Current Spikes ♦450mA GATE Pulldown Current During Short-Circuit Condition ♦Exponential GATE Pulldown Current ♦Withstands -100V Input Transients with No External Components ♦Programmable Inrush and Short-Circuit Current Limits ♦Operates from -20V to -80V♦Programmable Overvoltage Protection ♦Programmable Undervoltage Lockout with Built-In Glitch Filter ♦Overcurrent Fault Integrator ♦Powers Up into a Shorted Load ♦Power-Good Control Output♦Thermal Shutdown Protects External MOSFETMAX5921/MAX5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current________________________________________________________________Maxim Integrated Products 1Pin ConfigurationOrdering Information19-2946; Rev 1; 2/06For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .Typical Operating Circuit and Selector Guide appear at end of data sheet.Ordering Information continued at end of data sheet.M A X 5921/M A X 5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.All Voltages Are Referenced to V EE , Unless Otherwise Noted Supply Voltage (V DD - V EE )................................-0.3V to +100V DRAIN, PWRGD, PWRGD ....................................-0.3V to +100V PWRGD to DRAIN .............................................… -0.3V to +95V PWRGD to V DD .......................................................-95V to +85V SENSE (Internally Clamped).................................-0.3V to +1.0V GATE (Internally Clamped)....................................-0.3V to +18V UV and OV..............................................................-0.3V to +60V Current into SENSE...........................................................+40mACurrent into GATE...........................................................+300mA Current into Any Other Pin................................................+20mA Continuous Power Dissipation (T A = +70°C)8-Pin SO (derate 5.9mW/°C above +70°C)..................471mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature .....................................................+150°C Storage Temperature Range.............................-65°C to +150°C Lead Temperature (soldering, 10s).................................+300°CMAX5921/MAX5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS (continued)(V EE = 0V, V DD = 48V, T A = -40°C to +85°C, unless otherwise noted. Typical values are at T A = +25°C, unless otherwise noted.) (Notes 1, 4)unless otherwise specified.Note 2:Gate pulldown current after the current limit to GATE low (t PHLCL ) time has elapsed.Note 3:Minimum duration of GATE pulldown following a circuit breaker fault. The MAX5921_ automatically restarts after a circuit breaker fault. The MAX5939_ is latched off and can be reset by toggling UV low. The GATE pulldown does not release until t OFF has elapsed.Note 4:The min/max limits are 100% production tested at +25°C and +85°C and guaranteed by design at -40°C.M A X 5921/M A X 5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current 4_______________________________________________________________________________________Typical Operating Characteristics(V DD = +48V, V EE = 0V, T A = +25°C, unless otherwise noted.)43.043.243.843.643.444.844.644.244.044.445.0-4010-15356085GATE PULLUP CURRENT vs. TEMPERATURETEMPERATURE (°C)G A T E P U L L U P C U R R E N T (µA )25304540356555506070-4010-15356085GATE PULLDOWN CURRENT vs. TEMPERATURE AFTER A FAULTTEMPERATURE (°C)G A T E P U L L D O W N C U R R E N T (m A )156045307590040206080100GATE PULLDOWN CURRENTvs. OVERDRIVE DURING A CURRENT FAULTOVERDRIVE (mV)G A T E P U L L D O W N C U R R E N T (m A )010040030020050060090075010501200GATE PULLDOWN CURRENTvs. OVERDRIVE DURING A SHORT CIRCUITOVERDRIVE (mV)G A T E P U L L D O W N C U R R E N T (m V )-4010-15356085TEMPERATURE (°C)0.0010.011010.1100-4010-15356085PWRGD OUTPUT LEAKAGE CURRENT vs. TEMPERATURE (MAX5921B)TEMPERATURE (°C)P W R G D O U T P U T L E A K A G E C U R R E N T (n A )0200100500400300800700600900040206080100SUPPLY CURRENT vs. SUPPLY VOLTAGESUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (µA )798121110141315040206080100GATE VOLTAGE vs. SUPPLY VOLTAGESUPPLY VOLTAGE (V)G A T E V O L T A G E (V )4042484644585652505460-4010-15356085CURRENT-LIMIT TRIP VOLTAGEvs. TEMPERATUREM A X 5921T O C 03TEMPERATURE (°C)T R I P V O L T A G E (m V )MAX5921/MAX5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current_______________________________________________________________________________________5Figure 1a. Test Circuit 1Figure 1b. Test Circuit 2M A X 5921/M A X 5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current 6_______________________________________________________________________________________Timing DiagramsFigure 2. OV to GATE TimingFigure 3. UV to GATE TimingFigure 4a. SENSE to GATE Timing Figure 4b. Active Current-Limit ThresholdMAX5921/MAX5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown CurrentTiming Diagrams (continued)Figure 5a. DRAIN to PWRGD /PWRGD Timing Figure 5b. GATE to PWRGD /PWRGD TimingBlock DiagramM A X 5921/M A X 5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current 8_______________________________________________________________________________________Detailed DescriptionThe MAX5921/MAX5939 integrated hot-swap controllers for -48V power systems allow circuit boards to be safely hot plugged into a live backplane without causing a glitch on the power-supply rail. When circuit boards are inserted into a live backplane, the bypass capacitors at the input of the board’s power module or switching power supply can draw large inrush currents as they charge. Uncontrolled inrush currents can cause glitches on the system power supply and damage components on the board.circuit cards preventing damage to connectors, board components, and prevent glitches on the power-supply rail. Both the MAX5921/MAX5939 provide undervolt-age, overvoltage, and overcurrent protection. The MAX5921/MAX5939 ensure that the input voltage is sta-ble and within tolerance before applying power to the load. The device also provides protection against input voltage steps by limiting the load current to a safe level without turning off power to the load.MAX5921/MAX5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current_______________________________________________________________________________________9Board InsertionFigure 6a shows a typical hot-swap circuit for -48V sys-tems. When the circuit board first makes contact with the backplane, the DRAIN to GATE capacitance (C gd )of Q1 pulls up the GATE voltage to roughly IV EE x (C gd /C gd + C gs )I. The MAX5921/MAX5939 feature an internal dynamic clamp between GATE and V EE to keep the gate-to-source voltage of Q1 low during hot insertion preventing Q1 from passing an uncontrolled current to the load. F or most applications, the internal clamp between GATE and V EE of the MAX5921/MAX5939 eliminates the need for an external gate-to-source capacitor. The resistor R3 limits the current into the clamp circuitry during card insertion.Power-Supply RampingThe MAX5921/MAX5939 can reside either on the back-plane or the removable circuit board (Figure 6a). Power is delivered to the load by placing an external N-chan-nel MOSFET pass transistor in the power-supply path.After the circuit board is inserted into the backplane,and the supply voltage at V EE is stable and within the undervoltage and overvoltage tolerance, the MAX5921/MAX5939 gradually turn on the external MOSFET by charging the gate of Q1 with a 45µA cur-rent source. Capacitor C2 provides a feedback signal to accurately limit the inrush current.The inrush current can be calculated:I INRUSH = I PU x C L / C2where C L is the total load capacitance, C3 + C4, and I PU is the gate pullup current.Figure 6b shows the inrush current waveform. The cur-rent through C2 controls the GATE voltage. At the end of the DRAIN ramp, the GATE voltage is charged to its final value. The GATE-to-SENSE clamp limits the maxi-mum ∆V GATE to 18V.Board RemovalIf the circuit card is removed from the backplane, the volt-age at the UV falls below the UVLO detect threshold, and the MAX5921/MAX5939 turn off the external MOSFET.Current Limit and Electronic CircuitBreakerThe MAX5921/MAX5939 provide current-limiting and cir-cuit-breaker features that protect against excessive load current and short-circuit conditions. The load current is monitored by sensing the voltage across an external sense resistor connected between V EE and SENSE.Figure 6a. Inrush Control Circuitry/Typical Application CircuitM A X 5921/M A X 5939-48V Hot-Swap Controllers with External R SENSE and High Gate Pulldown Current 10______________________________________________________________________________________If the voltage between V EE and SENSE reaches the cur-rent-limit trip voltage (V CL ), the MAX5921/MAX5939 pull down the GATE and regulate the current through the external MOSF ET such that V SENSE - V EE <V CL . If the current drawn by the load drops below V CL / R SENSE limit, the GATE voltage rises again. However, if the load current is at the regulation limit of V CL / R SENSE for a peri-od of t PHLCL , the electronic circuit breaker trips, causing the MAX5921/MAX5939 to turn off the external MOSFET.After an overcurrent fault condition, the MAX5921 auto-matically restarts after t OFF has elapsed. The MAX5939circuit breaker is reset by toggling UV or by cycling power. Unless power is cycled to the MAX5939, the device waits until t OFF has elapsed before turning on the gate of the external FET.Load-Current RegulationThe MAX5921/MAX5939 accomplish load-current regu-lation by pulling current from GATE whenever V SENSE -V EE > V CL . This decreases the gate-to-source voltage of the external MOSFET, thereby reducing the load current.When V SENSE - V EE < V CL , the MAX5921/MAX5939 pulls GATE high by a 45µA (I PU ) current.Exponential Current RegulationThe MAX5921/MAX5939 provide an exponential pull-down current to turn off the external FET in response to overcurrent conditions. The GATE pulldown current increases (see Typical Operating Characteristics ) in response to V SENSE - V EE potentials greater than 50mV (V CL ).Load Current Regulation (Short-Circuit Condition)The MAX5921/MAX5939 devices also include a very fast high-current pulldown source connected to GATE (see Typical Operating Characteristics ). The high-cur-rent pulldown activates if V SENSE exceeds V EE by 650mV (typ) during a catastrophic overcurrent or short-circuit fault condition. The high-current pulldown circuit sinks as much as 450mA from GATE to turn off the external MOSFET.Immunity to Input Voltage StepsThe MAX5921/MAX5939 guard against input voltage steps on the input supply. A rapid increase in the input supply voltage (V DD - V EE increasing) causes a current step equal to I = C L x ∆V IN / ∆t, proportional to the input voltage slew rate (∆V IN / ∆t). If the load current exceeds V CL / R SENSE during an input voltage step, the MAX5921/MAX5939 current limit activates, pulling down the gate voltage and limiting the load current to V CL / R SENSE . The DRAIN voltage (V DRAIN ) then slews at a slower rate than the input voltage. As the drain voltage starts to slew down, the drain-to-gate feedback capacitor C2 pushes back on the gate, reducing the gate-to-source voltage (V GS ) and the current through the external MOSF ET.Once the input supply reaches its final value, the DRAIN slew rate (and therefore the inrush current) is limited by the capacitor C2 just as it is limited in the startup condi-tion (see the Power-Supply Ramping section). To ensure correct operation, R SENSE must be chosen to provide a current limit larger than the sum of the load current and the dynamic current into the load capacitance in the slewing mode.If the load current plus the capacitive charging current is below the current limit, the circuit breaker does not trip.Undervoltage and Overvoltage ProtectionUse UV and OV to detect undervoltage and overvoltage conditions. UV and OV internally connect to analog com-parators with 130mV (UV) and 50mV (OV) of hysteresis.When the UV voltage falls below its threshold or the OV voltage rises above its threshold, GATE pulls low. GATE is held low until UV goes high and OV is low, indicating that the input supply voltage is within specification. The MAX5921/MAX5939 includes an internal lockout (UVLO)that keeps the external MOSFET off until the input supply voltage exceeds 15.4V, regardless of the UV input.UV is also used to reset the circuit breaker after a fault condition has occurred. Pull UV below V UVL to reset the circuit breaker.GATE - V EE 10V/divV EE 50V/divDRAIN 50V/div INRUSH CURRENT 1A/div 4ms/div分销商库存信息:MAXIMMAX5921EESA+MAX5921FESA+MAX5921AESA+ MAX5921BESA+MAX5939EESA+T MAX5939CESA+T MAX5939DESA+T MAX5939FESA+T MAX5939BESA+T MAX5939AESA+T MAX5921AESA+T MAX5921BESA+T MAX5921FESA+T MAX5921EESA+T MAX5939AESA+ MAX5939DESA+MAX5939CESA+MAX5939BESA+ MAX5939FESA+MAX5939EESA+。

IRS2110SPBF;IRS2110PBF;IRS2113PBF;IRS2113STRPBF;IRS2110STRPBF;中文规格书,Datasheet资料

Features•Floating channel designed for bootstrap operation•Fully operational to +500 V or +600 V•Tolerant to negative transient voltage, dV/dt immune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout for both channels•3.3 V logic compatible•Separate logic supply range from 3.3 V to 20 V•L ogic and power ground ±5V offset•CMOS Schmitt-triggered inputs with pull-down•Cycle by cycle edge-triggered shutdown logic•Matched propagation delay for both channels•Outputs in phase with inputs•RoHS compliantDescriptionHIGH AND LOW SIDE DRIVERProduct SummaryV OFFSET (IRS2110)500 V max.(IRS2113)600 V max.I O+/- 2 A/2 AV OUT10 V - 20 Vt on/off (typ.)130 ns & 120 nsDelay Matching (IRS2110) 10 ns max.(IRS2113) 20 ns max. 1The IRS2110/IRS2113 are high voltage, high speedpower MOSFET and IGBT drivers with independenthigh-side and low-side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologiesenable ruggedized monolithic construction. L ogic in-puts are compatible with standard CMOS or LSTTL out-put, down to 3.3 V logic. The output drivers feature ahigh pulse current buffer stage designed for minimumdriver cross-conduction. Propagation delays arematched to simplify use in high frequency applications.The floating channel can be used to drive an N-channelpower MOSFET or IGBT in the high-side configurationwhich operates up to 500 V or 600 V.IRS2110(-1,-2,S)PbFIRS2113(-1,-2,S)PbFPackages14-L ead PDIPIRS2110 and IRS211314-L ead PDIP(w/o lead 4)IRS2110-1 and IRS2113-116-L ead PDIP(w/o leads 4 & 5)IRS2110-2 and IRS2113-216-L ead SOICIRS2110S andIRS2113SData Sheet No. PD60249 2IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFRecommended Operating ConditionsThe input/output logic timing diagram is shown in Fig. 1. For proper operation, the device should be used within the recommended conditions. The V S and V SS offset ratings are tested with all supplies biased at a 15 V differential.S S BS Note 3: When V DD < 5 V, the minimum V SS offset is limited to -V DD.Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured 3IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFDynamic Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, C L = 1000 pF, T A = 25 °C and V SS = COM unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Fig. 3.Static Electrical CharacteristicsV BIAS (V CC , V BS , V DD ) = 15 V, T A = 25 °C and V SS = COM unless otherwise specified. The V IN , V TH, and I IN parameters are referenced to V SS and are applicable to all three logic input leads: HIN, LIN, and SD. The V O and I O parameters are referenced to COM and are applicable to the respective output leads: HO or LO.Functional Block Diagram4IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF Lead Assignments14 Lead PDIPIRS2110/IRS211316 Lead SOIC (Wide Body) IRS2110S/IRS2113S14 Lead PDIP w/o lead 4 IRS2110-1/IRS2113-1 16 Lead PDIP w/o leads 4 & 5 IRS2110-2/IRS2113-25 6IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 1. Input/Output Timing DiagramFigure 2. Floating Supply Voltage Transient TestCircuitFigure 3. Switching Time Test Circuit Figure 4. Switching Time W aveform DefinitionFigure 6. Delay Matching W aveform DefinitionsFigure 5. Shutdown W aveform DefinitionsSFIRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbF 8IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 10A. Turn-On Rise Timevs. TemperatureFigure 10B. Turn-On Rise Time vs.Voltage101214161820Figure 11A. Turn-Off Fall Time vs. Temperature01020304050-50-25255075100125T u r n -O f f F a l l T i m e (n s )T u r n -O f f F a l l T i m e (n s )Temperature (o C )-50-25255075100125V BIAS Supply Voltage (V)Temperature (o C )IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 11B. Turn-Off Fall Time vs. Voltage 01020304050101214161820T u r n -O f f F a l l T i m e (n s )0.03.06.09.012.015.0-50-25255075100125L o g i c "1" I n p u t T h r e s h o l d (V )T u r n -O f f F a l l T i m e (n s )L o g i c “1” I n p u t T h r e s h o l d (V )V BIAS Supply Voltage (V)Temperature (o C ) 10IRS2110(-1,-2,S)PbF/IRS2113(-1,-2,S)PbFFigure 16A.Offset Supply Current vs. Temperature-50-25255075100125Figure 17A. V BS Supply Current vs. Temperature0100200300400500-50-25255075100125V B S S u p p l y C u r r e n t (µA )V B S S u p p l y C u r r e n t (µA )Temperature (o C)Temperature (o C)分销商库存信息:IRIRS2110SPBF IRS2110PBF IRS2113PBF IRS2113STRPBF IRS2110STRPBF IRS2113SPBF。

SPC563M64L7COAR;中文规格书,Datasheet资料

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.1 Device comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2 SPC563Mxx features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.3 SPC563Mxx feature details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
1.1 Document overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
controller – Fetch Accelerator for single cycle Flash
access @80 MHz ■ Up to 94 Kbyte on-chip static RAM (including

74270113;中文规格书,Datasheet资料

Bezeichnung :description :Eigenschaften / properties Wert / valueEinheit / unitTol.Impedanz @ 1 Wg./impedance @ 1 turn Impedanz @ 1 Wg./impedance @ 1 turnImpedanz @ 2 Wg./impedance @ 2 turn Impedanz @ 2 Wg./impedance @ 2 turn33%+ 20°C+ 150°C <= ø 4,6SMU Update 06-06-28LF RoHS update 04-10-11RTUpdate 02-04-17JH Neugestaltung00-12-06NameÄnderung / modificationDatum / date165 mm100 MHz25 MHz 25 MHz typ.± 25%Z typ..............................................................................................................................................................................................................................................Würth ElektronikHP 4191 B für/for Z und/and material 16092A - Klemme / clamp G Eigenschaften / general specifications:Z126Z D Prüfgeräte / test equipment:256100 MHzΩ± 25%68ΩTOROIDAL FERRITEWürth Elektronik eiSos GmbH & Co. KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked 405ZΩBasismaterial / base material:Curietemperatur / curie temperature:AWG26 - ø 0,5mm - Länge/length:ΩDatum / date...........................................................................Unterschrift / signature Kontrolliert / approvedTestbedingungen / test conditionsBetriebstemp. / operating temperature: -25°C ~ + 125°CF Werkstoffe & Zulassungen / material & approvals:4 W 620für Kabeldurchm. / for cable diameter [mm]:Lagertemperatur / storage temperature: -55°C ~ + 125°C Kunde / customerFreigabe erteilt / general release:CB Elektrische Eigenschaften / electrical properties:E Testbedingungen / test conditions:Luftfeuchtigkeit / humidity:Umgebungstemperatur / temperature:Bezeichnung :description :A:B:SMU Update 06-06-28LF RoHS update 04-10-11RTUpdate 02-04-17JH Neugestaltung00-12-06NameÄnderung / modificationDatum / dateGeprüft / checked Kontrolliert / approvedWürth Elektronik eiSos GmbH & Co. KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Würth Elektronik........................................................................................................................................................................................................................................................................................................................Datum / dateUnterschrift / signature H Impedanzverlauf / impedance curve:2 x durch Bohrung Ferrit / 2 x times through ferriteFreigabe erteilt / general release:Kunde / customer1 x durch Bohrung Ferrit / 1 x times trough ferriteTOROIDAL FERRITEDATUM / DATE : 2006-06-28This electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety andreliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eiSos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.分销商库存信息: WURTH-ELECTRONICS 74270113。