IPB50R199CP中文资料

UnitIPB50R199CPMaximum ratings, at T j =25 °C, unless otherwise specified ParameterSymbol Conditions Unit Continuous diode forward current I S ADiode pulse current 2)I S,pulse 40Reverse diode d v /d t 4)d v /d t15V/ns Parameter Symbol ConditionsUnitmin.typ.max.Thermal characteristicsThermal resistance, junction - caseR thJC --0.9K/WR thJASMD version, device on PCB, minimal footprint--62SMD version, device on PCB, 6 cm 2cooling area 5)-35-Soldering temperature, wave & reflowsoldering allowedT soldreflow MSL1--260°CElectrical characteristics, at T j =25 °C, unless otherwise specified Static characteristicsDrain-source breakdown voltage V (BR)DSS V GS =0 V, I D =250 µA 500--VGate threshold voltageV GS(th)V DS =V GS , I D =0.66 mA 2.533.5Zero gate voltage drain current I DSS V DS =500 V, V GS =0 V, T j =25 °C--1µAV DS =500 V, V GS =0 V, T j =150 °C-10-Gate-source leakage current I GSS V GS =20 V, V DS =0 V --100nA Drain-source on-state resistanceR DS(on)V GS =10 V, I D =9.9 A, T j =25 °C-0.180.199ΩV GS =10 V, I D =9.9 A, T j =150 °C-0.45-Gate resistanceR Gf =1 MHz, open drain-2.2-ΩValue T C =25 °C9.9Values Thermal resistance, junction - ambientIPB50R199CPParameterSymbol ConditionsUnitmin.typ.max.Dynamic characteristics Input capacitance C iss -1800-pFOutput capacitanceC oss-80-Effective output capacitance, energyrelated6)C o(er)-75-Effective output capacitance, time related7)C o(tr)-160-Turn-on delay time t d(on)-35-nsRise timet r -14-Turn-off delay time t d(off)-80-Fall timet f-10-Gate Charge Characteristics Gate to source charge Q gs -8-nCGate to drain charge Q gd -11-Gate charge total Q g -3445Gate plateau voltage V plateau-5.2-VReverse Diode Diode forward voltage V SD V GS =0 V, I F =9.9 A, T j =25 °C-0.9 1.2V Reverse recovery time t rr -340-ns Reverse recovery charge Q rr -4-µC Peak reverse recovery currentI rrm-24-A1) J-STD20 and JESD222) Pulse width t p limited by T j,max3) Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f.7)C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.6)C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.4) I SD ≤I D , d i /d t ≤200A/µs, V DClink =400V, V peak <V (BR)DSS , T j <T jmax , identical low and high side switchV R =400 V, I F =I S , d i F /d t =100 A/µs5)Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown airValues V GS =0 V, V DS =100 V, f =1 MHzV DD =400 V,V GS =10 V, I D =9.9 A, R G =16.4 ΩV DD =400 V, I D =9.9 A, V GS =0 to 10 VV GS =0 V, V DS =0 V to 400 V1 Power dissipation5 Typ. output characteristics9 Typ. gate charge13 Typ. capacitancesIPB50R199CP Definition of diode switching characteristicsIPB50R199CP PG-TO263-3-2: OutlinesIPB50R199CPPublished byInfineon Technologies AG81726 Munich, Germany© 2007 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee ofconditions or characteristics. With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device,Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rightsof any third party.InformationFor further information on technology, delivery terms and conditions and prices, pleasecontact the nearest Infineon Technologies Office().WarningsDue to technical requirements, components may contain dangerous substances. For informationon the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only withthe express written approval of Infineon Technologies, if a failure of such components canreasonably be expected to cause the failure of that life-support device or system or to affectthe safety or effectiveness of that device or system. Life support devices or systems areintended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the useror other persons may be endangered.。