7070T中文资料

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HT7070A中文资料

HT70XXVoltage DetectorSelection TablePart No.Detectable VoltageHysteresis WidthTolerance HT7022A 2.2V 0.11V ±5%HT7024A 2.4V 0.12V ±5%HT7027A 2.7V 0.135V ±5%HT7033A 3.3V 0.165V ±5%HT7039A 3.9V 0.195V ±5%HT7044A 4.4V 0.22V ±5%HT7050A 5.0V 0.25V ±5%HT7070A 7.0V0.35V±5%Note:The output type selection codes are:NMOS open drain normal open,active lowFor example:The HT7070A is a 7.0V,NMOS open drain active low outputOutput type selection tableV DDV DD >V DET (+)V DD £V DET (-)TypeV OUT AHi-ZVSSRev.1.601January 14,2003General DescriptionThe HT70XX series is a set of three-terminal low power voltage detectors implemented in CMOS technology.Each voltage detector in the series detects a particular fixed voltage ranging from 2.2V to 7V.The voltage de-tectors consist of a high-precision and low power con-sumption standard voltage source,a comparator,hysteresis circuit,and an output driver.CMOS technol-ogy ensures low power consumption.Although designed primarily as fixed voltage detectors,these devices can be used with external components to detect user specified threshold voltages (NMOS open drain type only).Features·Low power consumption ·Low temperature coefficient·Built-in high-stability reference source·Built-in hysteresis characteristic ·TO-92&SOT-89packageApplications·Battery checkers ·Level selectors ·Power failure detectors·Microcomputer reset ·Battery memory backup·Non-volatile RAM signal storage protectorsBlock DiagramN channel open drain output(normal open;active low)A typePin AssignmentRev.1.602January14,2003Pad AssignmentHT70XX (except HT7022A)Chip size:1317´1158(m m)2*The IC substrate should be connected to VDD in the PCB layout artwork.HT7022A onlyChip size:2032´1321(m m)2*The IC substrate should be connected to VDD in the PCB layout artwork.Absolute Maximum RatingsSupply Voltage,except HT7022A..................................................................................................V SS -0.3V to V SS +26V Supply Voltage,HT7022A only....................................................................................................................-0.3V to13V Output Voltage...........................V SS -0.3V to V DD +0.3V Output Current......................................................50mA Storage Temperature............................-50°C to 125°C Power Consumption..........................................200mWOperating Temperature 0°C to 70°CNote:These are stress ratings only.Stresses exceeding the range specified under ²Absolute Maximum Ratings ²maycause substantial damage to the device.Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-ity.Rev.1.603January 14,2003Pad CoordinatesHT70XX (except HT7022A)Unit:m m Pad No.X Y 1-483.30-379.502-234.60-399.503443.90-386.00HT7022A onlyUnit:m mPad No.X Y1-434.34394.972120.65461.013774.70412.75Electrical CharacteristicsHT7022A Ta=25°CHT7024A Ta=25°CHT7027A Ta=25°CRev.1.604January14,2003HT7039A Ta=25°CHT7044A Ta=25°CRev.1.605January14,2003HT7070A Ta=25°CRev.1.606January 14,2003Functional DescriptionThe HT70XX series is a set of voltage detectors equipped with a high stability voltage reference which is connected to the negative input of a comparator ¾de-noted as V REF in the following figure for NMOS output voltage detector.When the voltage drop to the positive input of the com-parator (i,e,V B )is higher than V REF ,VOUT goes high,M1turns off,and V B is expressed as V BH =V DD ´(R B +R C )/(R A +R B +R C ).If V DD is decreased so that V B falls to a value less than V REF ,the comparator output in-verts from high to low,V OUT goes low,V C is high,M1turns on,RC is bypassed,and V B becomes:V BL =V DD ´R B /(R A +R B ),which is less than V BH.By so doing,the comparator output will stay low to prevent the circuit from oscillating when V B »V REF.If V DD falls below the minimum operating voltage,the output becomes undefined.When VDD goes from low to V DD ´R B /(R A +R B )>V REF ,the comparator output and V OUT goes high.The detectable voltage is defined as:V DET (-)=R R R R R A B CB C +++´V REFThe release voltage is defined as:V DET (+)=R R R A BB+´V REFThe hysteresis width is:V HYS=V DET(+)-V DET(-)The figure demonstrates the NMOS output type withpositive output polarity(V OUT is normally open,activelow).The HT70XX series also supplies options for otheroutput types with active high outputs.Application cir-cuits shown are examples of positive output polarity(normally open,active low)unless otherwise specified.NMOS output voltage detector(HT70XXA) Application CircuitsMicrocomputer reset circuitNormally a reset circuit is required to protect the micro-computer system from malfunctions due to power line interruptions.The following examples show how differ-ent output configurations perform a reset function in var-ious systems.·NMOS open drain output application for separate power supply·NMOS open drain output application with R-C delayPower-on reset circuitWith several external components,the NMOS open drain type of the HT70XX series can be used to perform a power-on reset function as shown:Rev.1.607January14,20035V power line monitoring circuitGenerally,a minimum operating voltage of4.5V is guar-anteed in a5V power line system.The HT7044A is rec-ommended for use as5V power line monitoring circuit.·5V power line monitor with power-on reset·with5V voltage regulatorChange of detectable voltageIf the required voltage is not found in the standard prod-uct selection table,it is possible to change it by using ex-ternal resistance dividers or diodes.·Varying the detectable voltage with a resistance di-viderDetectable voltage=R RRA BB+´V DETHysteresis width=R RRA BB+´V HYS·Varying the detectable voltage with a diodeDetectable Voltage=V f1+V f2+V DETMalfunction analysisThe following circuit demonstrates the way a circuit ana-lyzes malfunctions by monitoring the variation or spikenoise of power supply voltage.Charge monitoring circuitThe following circuit shows a charged monitor for pro-tection against battery deterioration by overcharging.When the voltage of the battery is higher than the set de-tectable voltage,the transistor turns on to bypass thecharge current,protecting the battery from overcharg-ing.Rev.1.608January14,2003Level selectorThe following diagram illustrates a logic level selector.Rev.1.609January14,2003Package Information3-pin TO-92outline dimensionsSymbolDimensions in milMin.Nom.Max.A170¾200B170¾200C500¾¾D11¾20E90¾110F45¾55G45¾65H130¾160I8¾18a4°¾6°Rev.1.6010January14,20033-pin SOT-89outline dimensionsSymbolDimensions in milMin.Nom.Max.A173¾181B64¾72C90¾102D35¾47E155¾167F14¾19G17¾22H¾59¾I55¾63J14¾17Rev.1.6011January14,2003Product Tape and Reel SpecificationsTO-92reel dimensions(Unit:mm)Rev.1.6012January14,2003SOT-89reel dimensionsSOT-89Symbol Description Dimensions in mmA Reel Outer Diameter180±1.0B Reel Inner Diameter62±1.5C Spindle Hole Diameter12.75+0.15D Key Slit Width 1.9±0.15T1Space Between Flange12.4+0.2T2Reel Thickness17-0.4Rev.1.6013January14,2003TO-92Symbol Description Dimensions in mm I1Taped Lead Length(2.5)P Component Pitch12.7±1.0P0Perforation Pitch12.7±0.3P2Component to Perforation(Length Direction) 6.35±0.4F1Lead Spread 2.5+0.4-0.1F2Lead Spread 2.5+0.4-0.1D h Component Alignment0±0.1W Carrier Tape Width 18.0+1.0-0.5W0Hold-down Tape Width 6.0±0.5W1Perforation Position9.0±0.5W2Hold-down Tape Position(0.5)H0Lead Clinch Height16.0±0.5H1Component Height Less than24.7D0Perforation Diameter 4.0±0.2t Taped Lead Thickness0.7±0.2H Component Base Height19.0±0.5Note:Thickness less than0.38±0.05mm~0.5mmP0Accumulated pitch tolerance:±1mm/20pitches.()Bracketed figures are for consultation onlyRev.1.6014January14,2003SOT-89Symbol Description Dimensions in mmW Carrier Tape Width 12.0+0.3-0.1P Cavity Pitch8.0±0.1E Perforation Position 1.75±0.1F Cavity to Perforation(Width Direction) 5.5±0.05D Perforation Diameter 1.5+0.1D1Cavity Hole Diameter 1.5+0.1P0Perforation Pitch 4.0±0.1P1Cavity to Perforation(Length Direction) 2.0±0.10A0Cavity Length 4.8±0.1B0Cavity Width 4.5±0.1K0Cavity Depth 1.8±0.1t Carrier Tape Thickness0.30±0.013C Cover Tape Width9.3Rev.1.6015January14,2003Holtek Semiconductor Inc.(Headquarters)No.3,Creation Rd.II,Science-based Industrial Park,Hsinchu,TaiwanTel:886-3-563-1999Fax:886-3-563-1189Holtek Semiconductor Inc.(Sales Office)11F,No.576,Sec.7Chung Hsiao E.Rd.,Taipei,TaiwanTel:886-2-2782-9635Fax:886-2-2782-9636Fax:886-2-2782-7128(International sales hotline)Holtek Semiconductor(Shanghai)Inc.7th Floor,Building2,No.889,Yi Shan Rd.,Shanghai,ChinaTel:021-6485-5560Fax:021-6485-0313Holtek Semiconductor(Hong Kong)Ltd.RM.711,Tower2,Cheung Sha Wan Plaza,833Cheung Sha Wan Rd.,Kowloon,Hong KongTel:852-2-745-8288Fax:852-2-742-8657Holmate Semiconductor,Inc.48531Warm Springs Boulevard,Suite413,Fremont,CA94539Tel:510-252-9880Fax:510-252-9885CopyrightÓ2003by HOLTEK SEMICONDUCTOR INC.The information appearing in this Data Sheet is believed to be accurate at the time of publication.However,Holtek as-sumes no responsibility arising from the use of the specifications described.The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification,nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise.Holtek reserves the right to alter its products without prior notification.For the most up-to-date information,please visit our web site at .Rev.1.6016January14,2003。

WP710A10NT;中文规格书,Datasheet资料

Part No. Dice Lens Type Iv (mcd) [2] @ 10mA Min. WP710A10NT Pure Orange (GaAsP/GaP) Orange Transparent 25 Typ. 50 Viewing Angle [1] 2θ1/2 34°
Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Luminous intensity/ luminous Flux: +/-15%.
PACKING & LABEL SPECIFICATIONS
WP710A10NT
SPEC NO: DSAL0516 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: MAR/07/2011 DRAWN: J.Yu
PAGE: 4 OF 6 ERP: 1101029070
Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. 5mm below package base.
Pure Orange 62.5 25 145 5 -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds
/
SPEC NO: DSAL0516 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: MAR/07/2011 DRAWN: J.Yu

福建天电光电EMC7070系列LED器件使用指南说明书

导言尊敬的客户：感谢您使用福建天电光电有限公司生产的LED产品，为使您更好地了解我司产品的特性，方便您快速掌握我司产品的基本操作，特编写此册使用指南。

指南中的说明及注意事项，将帮助您安全、规范、合理的使用本公司的产品，避免或减少因不当的使用而造成产品损伤，进而影响到产品性能。

我们编写本指南的目的，就是使其能更好的为您提供服务，同时，我们还会根据您的需要提供完善的技术支持及售前、售后服务。

本册指南所述仅为我司产品的一部分，在您使用我司LED产品前，请您务必仔细阅读本使用指南，结合我司最新版的产品规格书，全面了解所选用的LED器件的使用条件，使用手法及相关的极限参数，对可能存在隐患的作业手法、使用条件等进行相应的规避处理，并在产品的可使用期内妥善保存。

同时需要说明的是，即使同一规格的产品，在实际应用领域其可靠性与整体的系统设计方案、作业方法、工作条件、环境因素等息息相关，使用指南中的内容无法涵盖您使用过程中可能涉及到的所有问题，而部分内容虽然有涵盖，但可能没有提供详细的说明，由此带来的不便，敬请谅解！为此，我们将根据您在实际使用过程中的典型案例和相关信息反馈，不定期更新本使用指南，期间如发生信息变更，将不作另行通知。

目录第一章：产品拿取注意事项 (1)第二章：产品除湿方法 (2)第三章：产品储存注意事项 (3)第四章：静电的产生、危害及防护 (4)第五章：产品的使用 (5)第六章：应用电路设计 (6)第七章：焊接事项说明 (7)第八章：产品的清洗 (10)第九章:LED器件的防硫化 (10)第十章：LED器件的热管理 (11)第十一章：其他 (13)一、产品拿取注意事项1.1手工操作注意事项（以EMC7070圆杯产品为例）：LED器件在使用过程中，应尽量避免手工操作，如有需要进行时，须使用防静电镊子进行拿取，拿取时只可夹取器件边沿树脂位置，不可触碰胶体部位。

操作中，请注意如下事项：1.1.1夹取时用力不可太大，防止造成器件损伤；1.1.2使用LED器件时，物体、设备及污染物均不能接触LED器件，避免物体、设备及污染物损伤器件1.1.3须注意防护LED器件表面，特别是胶体的出光面，应避免造成表面损伤从而影响正常出光1.1.4需在LED器件上增加二次光学时，须注意操作过程，避免二次光学损坏LED器件；1.1.5LED器件表面，不能粘有黑色物质及熔点低于150℃温度以下的物质。

CNY70中文资料

Dimensions of CNY70 in mm95 11345www.vishay.Document Number 83751Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423Document Number 83751。

乐泰SF 7070 known as Loctite 7070 安全技术说明书

安全技术说明书根据GB/T 16483-2008第 1 页共 7 页LOCTITE SF 7070 known as Loctite 7070安全技术说明书编号 : 153660V 001.14修订: 07.05.2013 发布日期: 11.09.2018化学品中文名称: LOCTITE SF 7070 known as Loctite 7070 推荐用途: 溶剂基清洁剂企业信息：汉高（中国）投资有限公司张衡路928号 201203 中国上海市浦东新区中国电话： +86-21-2891 8000 传真：+86-21-2891 5137生效日期: 07.05.2013应急信息：应急电话：+86 532 8388 9090 (24小时)。

物质或混合物的分类根据GB 13690-2009 （化学品分类和危险性公示通则）：危险分类危险类别接触途径靶器官易燃液体第3类皮肤敏化作用第1A 类皮肤接触皮肤刺激第2类皮肤接触吸入危害第1类对水生环境有慢性危害第2类标签要素根据GB 15258-2009 （化学品安全标签编写规定）：象形图:信号词:危险危险性说明:H226 易燃液体和蒸气。

H304 吞咽并进入呼吸道可能致命。

H315 造成皮肤刺激。

H317 可能导致皮肤过敏反应H411 对水生生物有毒并具有长期持续影响。

防范说明（预防）：P210远离热源/火花/明火。

-禁止吸烟。

P233保持容器密闭。

P240容器和接收设备接地/等势联接。

P241P241：使用防爆的电气设备。

P243采取防止静电放电的措施。

P261避免吸入喷雾。

P264处理后要彻底洗手P271只能在室外或通风良好之处使用。

P273避免释放到环境中。

P280戴防护手套/穿防护服/戴防护眼罩/戴防护面具。

防范说明（响应）：P301+P310如误吞咽：立即呼叫解毒中心或医生。

P302+P352如皮肤沾染：用大量肥皂和水清洗。

产品7070

中国上海市延安东路６１８号东海商业中心二期３Ｆ
邮编：２００００１
.
电话：８６．２１．５３５３４５９５
传真：８６．２１．５３８５４２５９
Loctite® 乐泰® 是美国乐泰公司注册商标
使用指南 1. 在处理表面大量喷涂。 2. 趁湿用净布除去表面污染物。如有必要，再次
S
氯丁橡胶 +2.3
S +14.7
S
PU 硅胶
+0.07
SS +3.30
S
+13.8
S +17.7
S
Viton®
0
SS +3.10
S
干燥速度 25°C 下干燥时间
材料不擦后擦(干布)
分钟 5-20 1-2
环境信息 7070 不含臭氧破坏成分，不同于 1.1.1-三氯乙烷。本产品不在 1990 干净空气行动法案或蒙特利尔条约之列，不会收到控制而取缔。本产品不含 SARAIII，313 章中成分。TSCA 用于美国，DSL 用于加拿大。
NC
并非产品规格以下所含技术资料仅供参考请与ＬＯＣＴＩＴＥ公司技术部门联系，以便获得该产品规格方面的支持与建议。
塑料
ABS 丙烯酸 Delrin® 环氧树脂 G10 尼龙 101 尼龙 66 PC 酚醛聚乙烯(高密) 聚乙烯(低密) 聚丙烯聚苯乙烯 (高冲击) 聚苯乙烯聚砜 PVC 特氟龙® Ultem® Valox®420
SS +1.72
S
S +11.3
S
SS +1.73
S
7070
1,1,1-三氯乙烷
38°C 下 30 分钟 38°C 下 30 分钟

HT7050a规格书

Rev. 1.4012014-03-19• 低功耗• 低温度系数• 高输入电压范围 (高达 30V)• 静态电流：3µA • 输出电压精度：±1%• 内建迟滞电路• 封装类型：TO92, SOT89 和 SOT23-5应用领域• 电池检测器• 电平选择器• 电源故障检测器• 微计算机复位• 电池存储备份• 非易失性RAM 信号存储保护HT70xxA-2系列是一组采用CMOS 技术实现的三端低功耗电压检测器。

该系列中的电压检测器能检测固定的电压，范围从 2.2V 到 8.2V 。

电压检测器系列由高精度低功耗的标准电压源、比较器、迟滞电路以及输出驱动器组成。

采用 CMOS 技术制造，因而确保了低功率消耗。

尽管主要用作固定电压检测器，但这些 IC 可搭配外部元件用于指定的阈值电压的检测。

选型表注：“xx ” 代表检测电压。

Rev. 1.4022014-03-19deN 沟道开漏输出（常开，低有效）输出表格和曲线图...d...引脚图电源供应电压 .............................................................................................................................V SS-0.3V ~ V SS+33V 输出电压 ...................................................................................................................................V SS-0.3V ~ V DD+0.3V 输出电流 .............................................................................................................................................................50mA功耗 ..................................................................................................................................................................200mW 储存温度范围 ............................................................................................................................................................−50°C ~ 125°C 工作环境温度 ........................................................................................................................................−40°C ~ 85°C 注：这里只强调额定功率，超过极限参数所规定的范围将对芯片造成损害，无法预期芯片在上述标示范围外的工作状态，而且若长期在标示范围外的条件下工作，可能影响芯片的可靠性。

2A07-T中文资料

e 32A01 - 2A072.0A RECTIFIERFeaturesMaximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specified·Diffused Junction·High Current Capability and Low Forward Voltage Drop ·Surge Overload Rating to 70A Peak·Lead Free Finish, RoHS Compliant (Note 3)Mechanical Data·Case: DO-15·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C·Terminals: Finish – Bright Tin. Solderable per MIL-STD-202,Method 208·Polarity: Cathode Band ·Marking: Type Number·Weight: 0.4 grams (approximate)Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.0.010.11.0100.40.8 1.21.6I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F VF,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.2Typical Forward Characteristics1.0101001.010100C ,T O T A L C A P A C I T A N C E (p F )T V ,REVERSE VOLTAGE (V)Fig.4Typical Total CapacitanceR 02.5I ,A V E R A G E F O R W A R D R E C T I F I E D C U R R E N T (A )O T ,AMBIENT TEMPERATURE (ºC)Fig.1Forward Current Derating CurveA 2550751001251501752000.51.01.52.0110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OF CYCLES AT 60HzFig.3Max Non-Repetitive Peak Fwd SurgeCurrent03060754515Ordering InformationNotes:4.For packaging details, visit our website at /datasheets/ap02008.pdf.(Note 4)IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein.Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein;neither does it convey any license under its patent rights,nor the rights of others.The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

中国与欧盟材料标准对照表

UNI 7845 DIN 17200 DIN 17200 UNI 7845 DIN 17200 UNI 7845 DIN 17200
UNI 7845 UNI 7845
UNI 7845 DIN 17200 DIN 17200
UNI 8552 UNI 8077
C40 C40E C45K C50E C50E 25CrMo4 25CrMo4
S690Q
EN 10025 EN 10025 EN 10025 EN 10025 EN 10028-2 EN 10028-2 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10025 EN 10155-95 EN 10025 EN 10025 EN 10155-95
GB/T 16270
根据 DANIELI 和 C. S.p.A. 的规定，此文件为保密文件，因此禁止任何人在未得到 DANIELI 管理部门授权的情况下复制或泄漏文件中的任何内容给其他的团体或竞争者.
C 10 Ck 10 C 15 Ck 15 16CrNi4 15CrNi6 17CrNiMo6 18NiCrMo5
Q690 E
GB/T1591-94 GB/T1591-94 GB/T1591-95 GB/T1591-96 GB 713-86 GB 713-86 GB 700-88 GB 700-88 GB 700-88 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 1591-94 GB/T 4171-2000 GB/T 1591-94 GB/T 1591-94 GB/T 4171-2000 GB/T 1591-94 GB/T 4172

F1070中文资料

F1070中⽂资料RF CHARACTERISTICS ( WATTS OUTPUT )200General DescriptionSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.PATENTED GOLD METALIZED 200Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR,ABSOLUTE MAXIMUM RATINGS (TC = 25 C)oTotal Device Junction to Case Thermal Maximum Junction StorageTemperatureDC Drain CurrentDrain to Gate Drain to Source Gate to Source 350Watts0.5Co 200-65to 15016A30VVV7070ELECTRICAL CHARACTERISTICS (EACH SIDE)SYMBOL PARAMETERMIN TYPMAXUNITS TEST CONDITIONSSYMBOL PARAMETERMIN TYPMAXUNITSTEST CONDITIONS GpsηVSWRCommon Source Power Gai Drain EfficiencyLoad Mismatch TolerancdB %Relative13601.620:1Idq = Idq = Idq = 1.61.6A,A,A,28.0Vds =V,28.0Vds =V,28.0Vds =V, F =175MHz F =175MHz F =175MHzBvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss CossDrain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation CurrenCommon Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc6541713.20.35221321680Mho Ohm Amp pF V V pF pFmA uA 0.2Ids = A,Vgs = 0V 28.0Vds =V,Vgs = 0V Vds = 0 V,Vgs = 30V 0.4Ids =A,Vgs = VdsVds = 10V,Vgs = 5V Vgs = 20V,Ids =16Vgs = 20V,Vds = 10V28.0Vds =V, Vgs = 0V, F = 1 MHz A 28.0Vds =V, Vgs = 0V, F = 1 MHz 28.0Vds =V, Vgs = 0V, F = 1 MHzPOLYFET RF DEVICES1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393EMAIL:Sales@/doc/e066c93e0b4c2e3f57276384.htmlURL:/doc/e066c93e0b4c2e3f57276384.htmlREVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE"Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performancet TMC o Co C/Wo F1070polyfet rf devicesDissipation Resistance Temperature Voltage Voltage Voltage 8/1/97VDMOS TRANSISTORPOUT VS PIN GRAPHF1070POLYFET RF DEVICES1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@/doc/e066c93e0b4c2e3f57276384.html URL:/doc/e066c93e0b4c2e3f57276384.html CAPACITANCE VS VOLTAGEIV CURVEID AND GM VS VGSS11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES REVISION 8/1/97。

70-2009标准

70-2009标准英文回答：The 70-2009 standard is a set of guidelines or requirements that need to be followed in a certain contextor industry. It is important to understand and comply with these standards in order to ensure safety, quality, and consistency in whatever field they apply to.For example, in the field of construction, the 70-2009 standard may outline specific requirements for building materials, structural integrity, and safety protocols. By adhering to these standards, construction companies can ensure that their buildings are safe for occupancy and meet the necessary quality standards.In the field of manufacturing, the 70-2009 standard may specify guidelines for product design, production processes, and quality control measures. By following these standards, manufacturers can ensure that their products meet thenecessary quality standards and are safe for consumers to use.中文回答：70-2009标准是一套在特定环境或行业中需要遵循的指导方针或要求。

7070化学成分

7070化学成分7070化学成分是指一种化学物质，其化学式为7070。

这种化学成分在化学领域中具有重要的应用和研究价值。

下面将从不同的角度介绍7070化学成分的特性和应用。

1. 物理性质7070化学成分是一种无色无味的固体，其晶体结构呈现出特定的形状。

7070化学成分具有一定的熔点和沸点，可以在适当的温度下转变为液体或气体状态。

此外，7070化学成分的密度、折射率等物理性质也可以通过实验进行测定。

2. 化学性质7070化学成分具有一定的化学反应性。

它可以与其他化学物质发生化学反应，生成新的化合物。

例如，当7070化学成分与氧气反应时，会产生燃烧现象，并释放出能量。

此外，7070化学成分还可以与酸、碱等物质发生中和反应，形成盐和水。

3. 应用领域7070化学成分在多个领域具有广泛的应用价值。

首先，在材料科学领域，7070化学成分可以用于制备新型材料，如高分子材料、纳米材料等。

这些材料具有独特的物理和化学性质，可以应用于电子、光学、医疗等领域。

在能源领域，7070化学成分也有着重要的应用。

例如，7070化学成分可以作为催化剂，促进化学反应的进行。

在燃料电池中，7070化学成分可以用作氧化剂，帮助电池产生电能。

此外，7070化学成分还可以用于太阳能电池、储能装置等能源技术的研发和应用。

7070化学成分还在药物研发、农业生产等领域发挥着重要作用。

在药物研发中，7070化学成分可以作为药物合成的起始物质或中间体，用于合成各种药物。

在农业生产中，7070化学成分可以用于制备农药、肥料等农业化学品，提高农作物的产量和质量。

总结起来，7070化学成分是一种重要的化学物质，具有一定的物理和化学性质。

它在材料科学、能源领域、药物研发、农业生产等多个领域有着广泛的应用。

随着科学技术的不断发展，7070化学成分的应用前景将会更加广阔。

希望未来能有更多的研究和创新，为人类社会的发展做出更大的贡献。

7070玻璃对应中国标准

7070玻璃对应中国标准全文共四篇示例，供读者参考第一篇示例：7070玻璃是一种种类繁多的现代化建筑材料，常被用于门窗、幕墙、楼梯扶手等建筑装饰中。

它具有透光性好、强度高、表面平整度好、耐气候性好等优点，因此在建筑行业广泛应用。

在中国，对于7070玻璃的质量标准也是严格规定的，以下将对其进行介绍和总结。

关于7070玻璃的国家标准是GB/T18915.2-2002《复合玻璃力学性能分布》和GB/T14833-93《夹胶玻璃》。

这两个标准规定了7070玻璃的力学性能、物理性能和几何尺寸等方面的要求，确保其在建筑中的安全可靠使用。

7070玻璃的力学性能主要包括抗弯强度、抗压强度、抗冲击性能等指标。

根据国家标准，7070玻璃的抗弯强度应符合标准规定的数值范围，以确保其能够承受一定的荷载而不会发生破碎。

其抗压强度和抗冲击性能也需符合标准规定，以保证其在面对外部冲击或压力时具有一定的抗性。

7070玻璃的物理性能也是非常重要的一项指标。

物理性能主要包括透光性、热传导性、吸声性等方面。

透光性是指7070玻璃透过光线的能力，其透光率需符合标准规定；热传导性是指7070玻璃对热的传导能力，其热传导系数也需符合标准规定；吸声性是指7070玻璃对声波的吸收能力，其吸声性需符合标准规定，以保证建筑内部的舒适性。

7070玻璃的几何尺寸也是关键的一项指标。

几何尺寸主要包括平整度、边缘平直度、角度偏差等方面。

平整度是指7070玻璃表面的平整程度，其平整度需符合标准规定；边缘平直度是指7070玻璃边缘的直度度数，其边缘平直度需符合标准规定；角度偏差是指7070玻璃角度的偏差程度，其角度偏差也需符合标准规定，以确保7070玻璃具有良好的安装性能。

7070玻璃是一种高品质的建筑材料，其质量标准也是严格规定的。

遵循国家标准，确保7070玻璃的力学性能、物理性能和几何尺寸等指标符合规定，将有助于保证其在建筑中的安全可靠使用。

开展7070玻璃的生产和使用，有望在建筑行业中发挥重要作用，为建筑行业的发展注入新的活力。

SFH 7070 BIOFY 传感器版本1.1 商品说明书

SFH 70702016-10-211BIOFY ® Sensor Version 1.1SFH 7070Ordering Information Features:•Multi chip package featuring two green emitters and one detector •Package size: (WxDxH) 7.5 mm x 3.9 mm x 0.9 mm •Light Barriers to block optical crosstalk •optimized for strong PPG signalApplications•Heart rate monitoring for:•Wearable devices (e.g. smart watches, fitness trackers, ...)•Mobile devicesTypeOrdering Code SFH 7070Q65111A98872016-10-212Version 1.1SFH 7070Pin configuration Block diagramPinName Function1G1C Green LED 1 Cathode 2PA Photodiode Anode 3G2C Green LED 2 Cathode 4G2A Green LED 2 Anode 5PC Photodiode Cathode 6G1AGreen LED 1 AnodeVersion 1.1SFH 70702016-10-213Maximum Ratings (T A = 25 °C)Parameter SymbolValuesUnitGeneralOperating temperature range T op -40 … 85°C Storage temperature rangeT stg -40 (85)°C ESD withstand voltage(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)V ESD2kVGreen Emitters Reverse voltage V R 5V Forward current I F (DC)25mA Surge current (t p = 10 µs, D = 0)I FSM300mADetector Reverse voltageV R16V2016-10-214Version 1.1SFH 7070Characteristics (T A = 25 °C)ParameterSymbolValueUnit Green Emitter (single emitter)Wavelength of peak emission (I F = 20 mA)(typ.)λpeak 526nm Centroid Wavelength (I F = 20 mA)(typ. (max.))λcentroid530 (±10)nm Spectral bandwidth at 50% of I max (I F = 20 mA)(typ.) ∆λ32nm Half angle(typ.)ϕ± 60°Rise and fall time of I e (10% and 90% of I e max )(I F = 100 mA, t p = 16 µs, R L = 50 Ω)(typ.)t r , t f56nsForward voltage (I F = 20 mA)(typ. (max.))V F 3.0 (≤ 3.4)V Reverse current (V R = 5 V)I R not designed for reverseoperationµA Radiant intensity(I F = 20 mA, t p = 20 ms)(typ.)I e 3.8mW / sr Total radiant flux(I F = 20 mA, t p = 20 ms)(typ.)Φe 11.7mW Temperature coefficient of I e or Φe (I F = 20 mA, t p = 20 ms)(typ.)TC I -0.35% / K Temperature coefficient of λcentroid (I F = 20 mA, t p = 20 ms)(typ.)TC λcentroid 0.03nm / K Temperature coefficient of V F (I F = 20 mA, t p = 20 ms)(typ.)TC V-3.6mV / KVersion 1.1SFH 70702016-10-215DetectorPhotocurrent(E e = 0.1 mW/cm 2, λ = 530 nm, V R = 5 V)(typ.)I P,5300.985µA Wavelength of max. sensitivity (typ.)λS max 635nm Spectral range of sensitivity (typ.)λ10%402 … 694nm Radiation sensitive area(typ.)A 3.46mm 2Dimensions of radiant sensitive area (typ.)L x W 1.29 x 2.69mm x mm Half angle(typ.)ϕ± 57°Dark current(V R = 5 V, Ee = 0 mW/cm 2)(typ. (max.))I R 0.4 (≤ 5)nA Spectral sensitivity of the chip (λ = 530nm)(typ.)S λ5300.31 A / W Spectral sensitivity of the chip (λ > 690nm)(typ.)S IR 0.02 A / W Open-circuit voltage(E e = 0.1 mW/cm 2, λ = 530 nm)(typ.)V O,535390mV Short-circuit current(E e = 0.1 mW/cm 2, λ = 530 nm)(typ.)I SC,5350.984µA Rise and fall time(V R = 5 V, R L = 50 Ω, λ = 530nm)(typ.)t r , t f 40ns Forward voltage(I F = 10 mA, E = 0 mW/cm 2)(typ.)V F 0.84V Capacitance(V R = 5 V, f = 1 MHz, E = 0 mW/cm 2)(typ.)C 055pFCharacteristics (T A = 25 °C)Parameter SymbolValueUnit2016-10-216Version 1.1SFH 7070Diagrams for green emitters Relative spectral emission 1)I rel = f(λ), T A = 25 °C, I F = 20 mAForward current 1)I F = f(V F ), T A = 25°CRelative radiant flux 1)Φe /Φe (20 mA) = f(I F ), single pulse, t p = 25µs, T A = 25°CVersion 1.1SFH 70702016-10-217Max. permissible forward current 1)I F,max = f(T A ), R thJA = 800 K/WPermissible pulse handling capability 1)I F = f(t p ), T A = 40°C, duty cycle DPermissible pulse handling capability 1)I F = f(t p ), T A = 85°C, duty cycle DDiagrams for green emitters2016-10-218Version 1.1SFH 7070Diagrams for detectorRelative spectral sensitivity 1)S rel = f(λ), T A = 25 °CPhotocurrent 1)I P (V R = 5 V), λ=530nm, T A = 25 °CDark current 1)I R = f(V R ), E = 0 mW/cm 2, T A = 25 °CCapacitance 1)C = f(V R ), f = 1 MHz, E = 0 mW/cm 2, T A= 25 °CVersion 1.1SFH 70702016-10-219Directional characteristics of detector 1)S rel = f(ϕ), λ=530nmRadiation characteristics of emitter 1)I rel = f(ϕ)2016-10-2110Package OutlineDimensions in mmPackage: chip on board Approximate Weight:43 mg2016-10-2111Recommended solder pad designDimensions in mm (inch).Reflow Soldering ProfileProduct complies to MSL Level 4 acc. to JEDEC J-STD-020D.01050100150200250300t˚C2016-10-2112Method of TapingDimensions in mm [inch].All temper a t u re s refer to the center of the p a ck a ge, me asu red on the top of the component * s lope c a lc u l a tion D T/D t: D t m a x. 5 s ; f u lfillment for the whole T-r a nge2016-10-2113Tape and Reel16 mm tape with 1500 pcs. on ∅ 180 mm reelDimensions in mmTape Dimensions [mm]WP 0P 1P 2D 0E F 16 +0.3 / -0.14 ±0.18 ±0.12 ±0.051.5 ±0.11.75 ±0.17.5 ±0.05Reel Dimensions [mm]A W N min W 1W 2max 180166016.4 +222.4Direction of u nreelingW OHAY0324Tr a iler:min. 160 mm **) Dimen s ion s a cc. to IEC 60286-3; EIA 481-D2016-10-2114Barcode-Product-Label (BPL)Dry Packing Process and MaterialsNote:Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card.Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC.OHA04563(G) GROUP:1234567890(1T) LOT NO:(9D) D/C:1234(X) PROD NO:123456789(6P) BATCH NO:1234567890LX XXXXRoHS CompliantBIN1: XX-XX-X-XXX-XML X Temp STXXX °C XPack: RXX D E MY XXX X_X123_1234.1234 X 9999(Q)QTY:Semiconductors OSRAM Opto XX-XX-X-X P EXX 234.1234 X X-X-XL 12123XX XX X X_X123_1XX-XX L Pack: RX 4D ) D/C D) D/C 3Pack: R DEMY D/P M :1239DE :1234567rEN O:ors A X 890XRX DEMY 12D) D/C:234(7890NO:234p oXXX _123XX-tors OHA00539a torB a rcode l ab el2016-10-2115Transportation Packing and MaterialsDimensions of transportation box in mm Width Length Height 195 ± 5195 ± 542 ± 52016-10-2116DisclaimerLanguage english will prevail in case of any discrepancies or deviations between the two language wordings.Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical re q uirements components may contain dangerous substances.For information on the types in q uestion please contact our Sales Organization.?If printed or downloaded, please find the latest version in the Internet.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose!Critical components * may only be used in life-support devices ** or systems with the express written approval of OSRAM OS.*) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system.**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered.Glossary1)Typical Values: Due to the special conditions of the manufacturing processes of LE D and photodiodes, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If re q uested, e.g. because of technical improvements, these typ. data will bechanged without any further notice.Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg © All Rights Reserved.SFH 7070。

锅炉压力容器进口许可证名录

/xkz/2001/zzcml.htm（第 1／10 页）2010-4-30 11:24:52
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7070R资料

The 7070 IFL is a 10 - 200 MHz interfacility fiberoptic link used primarily in single channel IF signal uplinking applications with medium dynamic range requirements. The 7070 IFL consists of an optical transmitter (7070T) that receives signals from satellite modems, video modulators, or exicters and transmits them to an optical receiver (7070R) via singlemode fiber. The 7070T and 7070R modules plug into a 7000M 3U chassis/power supply that enables expansion of the system to accommodate any 6 SAT-LIGHT® modules. A wide variety of options are available. The 7070 IFL transmits all satellite modulation schemes - digital or analog. The RF signal is directly modulated and adds virtually no phase noise to the original IF signal. The direct modulation, along with extremely flat amplitude and group delay guarantees low BER and high signal quality, independent of distance. 7070 IFL offers a choice of gain control. Applications requiring unity gain use Manual Gain Control (MGC), while downlink applications use Automatic Gain Control for constant output over a wide range of signal levels. Front panel test ports, LEDs and back panel monitors and alarms allow for complete system status monitoring and for interfacing with M&C systems.

FT702LT D 前平面式风传感器手册说明书

FT Technologies 公司CHURCH LANETEDDINGTONMIDDLESEX TW11 8PAENGLAND电话：+44(0)20 8943 0801传真：+44(0)20 8943 3283网站: 电子邮件:***************.uk A9308-4-CN 2013年6月FT 和Acu-Res(声共振)标识为FT Technologies 公司注册商标。

FT702LT/D 前平面式风传感器手册模拟前平面式产品变量目录产品标识 (3)1简介 (6)1.1产品概述 (6)1.2产品版本型号与标识 (6)1.3管状支架传感器 (7)1.4使用范围 (7)1.5声明 (8)2功能描述 (9)2.1技术性能 (9)2.2电流回路 (10)2.3加热器设置 (13)3安装 (14)3.1产品连接 (14)3.2FT702LT/D产品安装 (15)3.3雷击防护与电磁兼容性(EMC) (17)3.4FT702LT/D产品检测 (21)3.5故障查找与故障排除 (22)3.6退货条款 (22)4简功评估 (23)4.1测评套装 (23)4.2接线图 (23)4.3快速安装步骤 (24)5更改设置 (25)5.1安装配置程序 (25)5.2FT702LT/D产品设置 (25)5.3更改设置 (26)5.4传感器报告 (26)5.5电流回路测试 (27)5.6读取风项数据 (28)5.7风传感器模式示警 (28)产品标识本使用手册及相关设备将使用以下标识。

请仔细阅读设备所带标识，并按照标识进行操作。

Meaning / DescriptionSymbol Significantion/ DescriptionWarning/ CautionAn appropriate safety instruction should be followed or caution to a potential hazard exists这个警告标识意味着用户需要在阅读使用手册，并参考其中重要的安全信息和操作指南。

7070芯片

7070芯片7070芯片是一种高性能的处理器芯片，由于其出色的性能和能效，被广泛应用于智能手机、平板电脑、游戏主机等设备上。

本文将详细介绍7070芯片的架构、特点和应用场景。

7070芯片采用先进的制程工艺，拥有多个高性能的核心。

其架构设计灵活，可根据不同的需求配置不同数量的核心。

其中，每个核心都具备独立的运算能力，可以同时处理多个任务。

这使得7070芯片能够在高负载情况下保持出色的运行性能，提供快速响应和流畅的用户体验。

7070芯片还内置了丰富的外设接口，如USB、HDMI、蓝牙等，以及各种传感器模块，如陀螺仪、加速度计等。

这些接口和模块能够实现与外部设备的高速数据传输和交互，为用户提供更多的功能和体验。

此外，7070芯片还支持多种无线通信技术，如4G、5G等，能够实现高速网络连接和无缝切换，让用户随时随地享受网络服务。

7070芯片的特点不仅在于其强大的性能，还在于其高能效的设计。

首先，7070芯片采用了低功耗的架构和制程工艺，能够在保持高性能的同时减少功耗和发热。

这对于智能设备的电池续航和散热管理至关重要。

其次，7070芯片还针对不同的使用场景进行了优化，通过智能调节功耗和性能的方式，实现了更长的续航时间和更低的功耗消耗。

最后，7070芯片还支持智能节能技术，能够根据不同的任务需求动态调整功耗和性能，最大限度地提高能效。

7070芯片在各种应用场景中都有广泛的应用。

首先，在智能手机领域，7070芯片的强大性能和高能效设计能够满足用户对于流畅游戏、高清视频和快速应用响应的需求。

其次，在平板电脑和笔记本电脑领域，7070芯片的多核心架构和高速数据传输能力能够提供更快的计算速度和更好的用户体验。

此外，在游戏主机和人工智能设备中，7070芯片的高性能和多功能外设接口能够满足复杂的计算和数据处理需求。

综上所述，7070芯片是一款高性能、高能效的处理器芯片，具备出色的运行性能和各种外设接口。

其广泛的应用场景为智能设备提供了强大的计算能力，提升了用户的体验和便利性。

C67070-A2506-A67中文资料

3
Oct-20-1997
元器件交易网
BSM 35 GD 120 DN2
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
300 W 260 Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 160
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3 A IC 10 2
t = 18.0µs p
100 µs
10 1
1 ms
10 0
10 ms
DC 10
-1
10
0
10
1
10
2
10
3
V
TC
VCE
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
2
Oct-20-1997
元器件交易网
BSM 35 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Rise time VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Fall time VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Free-Wheel Diode Diode forward voltage IF = 35 A, VGE = 0 V, Tj = 25 °C IF = 35 A, VGE = 0 V, Tj = 125 °C Reverse recovery time IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C 2 5 Qrr 0.25 µC trr VF 2.3 1.9 2.9 µs V 50 75 tf 400 600 td(off) 60 120 tr 60 120 td(on) ns Values typ. max. Unit