NRLF222M50V25X20F中文资料

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RE22R2AMR产品数据手册说明书

RE22R2AMR.T h e i n f o r m a t i o n p r o v i d e d i n t h i s d o c u m e n t a t i o n c o n t a i n s g e n e r a l d e s c r i p t i o n s a n d /o r t e c h n i c a l c h a r a c t e r i s t i c s o f t h e p e r f o r m a n c e o f t h e p r o d u c t s c o n t a i n e d h e r e i n .T h i s d o c u m e n t a t i o n i s n o t i n t e n d e d a s a s u b s t i t u t e f o r a n d i s n o t t o b e u s e d f o r d e t e r m i n i n g s u i t a b i l i t y o r r e l i a b i l i t y o f t h e s e p r o d u c t s f o r s p e c i f i c u s e r a p p l i c a t i o n s .I t i s t h e d u t y o f a n y s u c h u s e r o r i n t e g r a t o r t o p e r f o r m t h e a p p r o p r i a t e a n d c o m p l e t e r i s k a n a l y s i s , e v a l u a t i o n a n d t e s t i n g o f t h e p r o d u c t s w i t h r e s p e c t t o t h e r e l e v a n t s p e c i f i c a p p l i c a t i o n o r u s e t h e r e o f .N e i t h e r S c h n e i d e r E l e c t r i c I n d u s t r i e s S A S n o r a n y o f i t s a f f i l i a t e s o r s u b s i d i a r i e s s h a l l b e r e s p o n s i b l e o r l i a b l e f o r m i s u s e o f t h e i n f o r m a t i o n c o n t a i n e d h e r e i n .Product data sheetCharacteristicsRE22R2AMROn-delay Timing Relay - 0.05s…300h - 24…240V AC/DC - 2C/OMainRange of product Zelio TimeProduct or component typeModular timing relay Discrete output type Relay Device short name RE22Nominal output current8 AComplementaryContacts type and composition 1 C/O timed or instantaneous contact, cadmium free 1 C/O timed contact, cadmium free Time delay type A AwTime delay range0.3...3 s 1...10 s 0.05...1 s 3...30 s 10...100 s 30...300 s 3...30 min 30...300 min 3...30 h 30...300 hControl typeExternal potentiometer Diagnostic button Rotary knob[Us] rated supply voltage 24...240 V AC/DC at 50/60 Hz Release input voltage <= 2.4 V Voltage range 0.85...1.1 Us Supply frequency 50...60 Hz (+/- 5 %)Connections - terminalsScrew terminals : 2 x 0.2...2 x 1.5 mm², AWG 24...AWG 16 flexible cable with ca-ble endScrew terminals : 1 x 0.2...1 x 2.5 mm², AWG 24...AWG 14 flexible cable with ca-ble endScrew terminals : 2 x 0.5...2 x 2.5 mm², AWG 20...AWG 14 solid cable without cable endScrew terminals : 1 x 0.5...1 x 3.3 mm², AWG 20...AWG 12 solid cable without cable endTightening torque 0.6...1 N.m conforming to IEC 60947-1Housing material Self-extinguishingRepeat accuracy +/- 0.5 % conforming to IEC 61812-1Temperature drift +/- 0.05 %/°C Voltage drift+/- 0.2 %/VSetting accuracy of time delay +/- 10 % of full scale at 25 °C conforming to IEC 61812-1Control signal pulse width 30 ms100 ms (with load in parallel)Insulation resistance 100 MOhm at 500 V DC conforming to IEC 60664-1Recovery time120 ms (on de-energisation)Immunity to microbreaks <= 10 ms Power consumption in VA3 VA at 240 V ACPower consumption in W 1.5 W at 240 V DCSwitching capacity in VA2000 VAMinimum switching current10 mA 5 V DCMaximum switching current8 AMaximum switching voltage250 V ACElectrical durability100000 cycles for 2 A at 24 V DC-1100000 cycles for 8 A at 250 V AC-1Mechanical durability10000000 cyclesRated impulse withstand voltage 5 kV for 1.2...50 µs conforming to IEC 60664-1Power on delay< 100 msCreepage distance 4 kV/3 conforming to IEC 60664-1Overvoltage category III conforming to IEC 60664-1Mounting position Any positionMounting support35 mm DIN rail conforming to EN/IEC 60715Status LED Yellow LED (slow flashing) for timing in progress and output relay energisedYellow LED (fast flashing) for timing in progress and output relay de-energisedYellow LED (steady) for output relay energisedGreen LED backlight (steady) for dial pointer indicationProduct weight0.105 kgEnvironmentDielectric strength 2.5 kV for 1 mA/1 minute at 50 Hz between relay output and power supply withbasic insulation conforming to IEC 61812-1Standards IEC 61812-1UL 508Directives2004/108/EC - electromagnetic compatibility2006/95/EC - low voltage directiveProduct certifications CCCCECSAGLULRCMEACChina RoHSAmbient air temperature for operation-20...60 °CAmbient air temperature for storage-40...70 °CIP degree of protection IP50 (front panel) conforming to IEC 60529IP20 (terminals) conforming to IEC 60529IP40 (housing) conforming to IEC 60529Pollution degree 3 conforming to IEC 60664-1Vibration resistance20 m/s² (f = 10...150 Hz) conforming to IEC 60068-2-6Shock resistance 5 gn (in operation) (duration = 11 ms) conforming to IEC 60068-2-2715 gn (not operating) (duration = 11 ms) conforming to IEC 60068-2-27 Relative humidity95 % at 25...55 °CElectromagnetic compatibility Immunity to microbreaks and voltage drops (test level: 100 % - 20 ms) conform-ing to IEC 61000-4-11Immunity to microbreaks and voltage drops (test level: 30 % - 500 ms) conform-ing to IEC 61000-4-11Fast transient bursts (test level: 2 kV, level 3 - direct contact) conforming to IEC61000-4-4Conducted RF disturbances (test level: 10 V, level 3 - 0.15...80 MHz) conformingto IEC 61000-4-6Radiated radio-frequency electromagnetic field immunity test (test level: 10 V/m,level 3 - 80 MHz...1 GHz) conforming to IEC 61000-4-3Electrostatic discharge (test level: 8 kV, level 3 - air discharge) conforming to IEC61000-4-2Electrostatic discharge (test level: 6 kV, level 3 - contact discharge) conforming toIEC 61000-4-2Surge immunity test (test level: 2 kV, level 3 - common mode) conforming to IEC61000-4-5Surge immunity test (test level: 1 kV, level 3 - differential mode) conforming toIEC 61000-4-5Fast transients immunity test (test level: 1 kV, level 3 - capacitive connecting clip)conforming to IEC 61000-4-4Product data sheetRE22R2AMR Dimensions DrawingsDimensionsProduct data sheetRE22R2AMR Connections and SchemaWiring DiagramProduct data sheetRE22R2AMRTechnical DescriptionFunction A: Power On-DelayDescriptionOn energisation of power supply, the timing period T starts. After timing, the output(s) R close(s).The second output (R2) can be either timed (when set to "TIMED") or instantaneous (when set to "INST").Function: 1 OutputFunction: 2 OutputsFunction Aw : Power On-Delay With Retrigger / Restart ControlDescriptionOn energisation of power supply, the timing period T starts.At the end of the timing period T, the output(s) R close(s).Energization of Y1 makes the output(s) R open(s).Deenergization of Y1 restarts timing period T.At the end of timing period T, the output(s) R close(s).The second output (R2) can be either timed (when set to "TIMED") or instantaneous (when set to "INST")Function: 1 OutputFunction: 2 OutputsLegendRelay de-energisedRelay energisedOutput openOutput closedUSupply-TTiming period-R1/2 timed outputsR2-R2The second output is instantaneous if the right position is selected inst.-Retrigger / Restart controlY1-RE22R2AMR.。

IRFR220资料

DRAIN (FLANGE)
DRAIN
SOURCE
4-389
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
or 407-727-9207 | Copyright © Intersil Corporation 1999
D
-
Source Lead, 6.0mm
LD
(0.25in) From Package to
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
-
tr
VGS = 10V
-
MOSFET Switching Times are Essentially Indepen-
td(OFF) dent of Operating Temperature
-
tf
-
Qg(TOT) VGS = 10V, ID = 4.6A, VDS = 0.8 x Rated BVDSS, -
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

IXFH24N50中文资料

© 1999 IXYS All rights reservedSymbol Test Conditions Maximum RatingsV DSS T J = 25°C to 150°C500V V DGR T J = 25°C to 150°C; R GS = 1 M Ω500V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C21N5021A 24N5024A 26N5026A I DM T C = 25°C, pulse width limited by T JM 21N5084A 24N5096A 26N50104A I ART C = 25°C21N5021A 24N5024A 26N5026A E AR T C = 25°C30mJ dv/dt I S ≤ I DM , di/dt ≤ 100 A/µs, V DD ≤ V DSS ,5V/n s T J ≤ 150°C, R G = 2 ΩP D T C = 25°C300W T J -55 ... +150°CT JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.062 in.) from case for 10 s 300°CM d Mounting torque1.13/10 Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gSymbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 250 µA 500V V GS(th)V DS = V GS , I D = 4 mA 24V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSSV DS = 0.8 • V DSS T J = 25°C 200µA V GS = 0 VT J = 125°C1mAN-Channel Enhancement ModeHigh dv/dt, Low t rr , HDMOS TM FamilyTO-247 AD (IXFH)TO-204 AE (IXFM)DGFeatures•International standard packages •Low R DS (on) HDMOS TM process•Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS)rated•Low package inductance -easy to drive and to protect •Fast intrinsic RectifierApplications•DC-DC converters•Synchronous rectification •Battery chargers•Switched-mode and resonant-mode power supplies •DC choppers •AC motor control•Temperature and lighting controls •Low voltage relaysAdvantages•Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)•High power surface mountable package •High power densityG = Gate, D = Drain,S = Source,TAB = Drain91525H (9/99)(TAB)V DSSI D25R DS(on)IXFH/IXFM21N50500 V 21 A 0.25 ΩIXFH/IXFM/IXFT24N50500 V 24 A 0.23 ΩIXFH/IXFT26N50500 V 26 A 0.20 Ω t rr ≤ 250 nsHiPerFETTMPower MOSFETsTO-268 (D3) Case Style(TAB)GS© 1999 IXYS All rights reservedFig. 1Output CharacteristicsFig. 2 Input AdmittanceFig. 5Drain Current vs.Fig. 6Temperature Dependence of Case TemperatureBreakdown and Threshold VoltageFig. 3R DS(on) vs. Drain CurrentFig. 4 Temperature Dependence of Drain to Source ResistanceT J - Degrees C-50-250255075100125150B V /V G (t h ) - N o r m a l i z e d0.50.60.70.80.91.01.11.2BV DSSV GS(th)T C - Degrees C -50-25255075100125150I D - A m p e r e s051015202530T J - Degrees C-50-250255075100125150R D S (o n ) - N o r m a l i z e d0.500.751.001.251.501.752.002.252.50I D - Amperes 05101520253035404550R D S (o n ) - N o r m a l i z e d0.91.01.11.21.31.41.51.6V GS - Volts012345678910I D - A m p e r e s5101520253035404550V DS - Volts 05101520253035I D - A m p e r e s5101520253035404550IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025IXYS reserves the right to change limits, test conditions, and dimensions.Fig.7Gate Charge Characteristic Curve Fig.8Forward Bias Safe Operating AreaFig.9Capacitance Curves Fig.10 Source Current vs. Source to Drain VoltageFig.11 Transient Thermal ImpedanceV DS - Volts110100I D - A m p e r e s0.1110100Gate Charge - nCoulombs255075100125150175200V G E - V o l t s012345678910V SD - Volt0.000.250.500.75 1.00 1.25 1.50I D - A m p e r e s05101520253035404550V DS - Volts 0510152025C a p a c i t a n c e - p F050010001500200025003000350040004500Time - Seconds0.000010.00010.0010.010.1110T h e r m a l R e s p o n s e - K /W0.0010.010.11C rssCoss50010µs 100µs1ms 10ms100msCissf = 1 Mhz V DS = 25V。

韩荣产品资料-2

当控制温度升高时感温液体膨胀产生的推力将热媒关小，以降低输出温度；当控制温度降低时感温液体收缩，在复位装置的作用下将热媒开大，以提高输出温度，从而使被控制的温度达到和保持在所设定的温度范围内。

深圳市凯斯机电应用技术XXX（bbb://aaacase-tradeaaa）作为韩国韩荣系列数码温控器华南区的代理商，可以为您提供各种型号，各种规格，各种用途的数码温度控制器，专用温度控制器，温度控制器，普通温度控制器。

韩国韩荣温控器产品包括：可编程温度.湿度控制器、PID 温度控制器、一般型温度控制器、专用温度控制器、温度指示器、温度控制器的周边机器。

可编程温度.湿度控制器：可编程温度.湿度控制器|可编程温度控制器A：可编程温度.湿度控制器：TH500系列可编程温度、湿度控制器：适用触感面板的彩色LCD画面、300模式（总6000段）、接点输入(D.I)8点，数码输出(D.O)20点、基本搭载通信功能(RS232及RS485/422）。

测定范围：温度：-100.0 ~ 200.0 °C、0.000 ~ 5.000 V ( -100.0 ~ 200.0 °C) 。

湿度：-100.0 ~ 200.0 °C ( 0.0 ~ 100.0 % RH ) 、0.000 ~ 5.000 V ( 0.0 ~ 100.0 % RH ) 。

指示精度：温度( ± 0.1 % of F.S ) 、湿度( ± 1 % of F.S )。

取样周期：温/ 湿度500 ms 。

TH300系列可编程温度、湿度控制器：应用触摸屏的彩色LCD画面、300模式(共6000段) 、接点输入(D.I)4点，数码输出(D.O)12点、通讯功能(RS232及RS485/422) 根据型号选择。

MUR220中文资料

MUR220Preferred Device SWITCHMODE™Power Rectifier...designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:•Ultrafast 25 Nanosecond Recovery Times•175°C Operating Junction Temperature•Low Forward V oltage•Low Leakage Current•High Temperature Glass Passivated JunctionMechanical Characteristics•Case: Epoxy, Molded•Weight: 0.4 gram (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case•Shipped in plastic bags, 1000 per bag•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number•Polarity: Cathode Indicated by Polarity Band•Marking: MUR220MAXIMUM RATINGSDevice Package ShippingORDERING INFORMATIONMUR220RL Axial Lead5000/T ape & Reel MUR220Axial Lead1000 Units/Bag Preferred devices are recommended choices for future use and best overall value.THERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICSV F , INSTANTANEOUS VOLTAGE (VOLTS) 1.31.010I F 0.10.51.00.61.11.2Figure 1. Maximum Forward Voltage , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )0.70.80.9Figure 2. Typical Forward VoltageV F, INSTANTANEOUS VOLTAGE (VOLTS)0.40.70.51.30.61.01.20.80.91.1200.1101004060V R , REVERSE VOLTAGE (VOLTS)Figure 3. Maximum Reverse Current801602000.011.0I R , R E V E R S E C U R R E N T ( A )m 100120140180V R , REVERSE VOLTAGE (VOLTS)206040801000.0010.11.0I R 200Figure 4. Typical Reverse Current1401200.01, R E V E R S E C U R R E N T ( A )m 10180160I F(AV), AVERAGE FORWARD CURRENT (AMPS)T A , AMBIENT TEMPERATURE (°C)2.01.03.05.04.0I Figure5. Current DeratingFigure 6. Power DissipationFigure 7. Typical Capacitance, A V E R A G E F O R W A R D C U R R E N T (A M P S )F (A V )1030505.0V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )7.020NOTE 1. - AMBIENT MOUNTING DATAPACKAGE DIMENSIONSMINI MOSORB CASE 59-10ISSUE SDIM MIN MAX MIN MAX MILLIMETERSINCHES A 4.10 5.200.1610.205B 2.00 2.700.0790.106D 0.710.860.0280.034F −−− 1.27−−−0.050K25.40−−−1.000−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.59−04 OBSOLETE, NEW STANDARD 59−09.4.59−03 OBSOLETE, NEW STANDARD 59−10.5.ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY6.POLARITY DENOTED BY CATHODE BAND.7.LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATIONJAPAN: ON Semiconductor, Japan Customer Focus Center2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051Phone: 81-3-5773-3850。

NRLMW222M200V20X25F中文资料

Large Can Aluminum Electrolytic CapacitorsFEATURES• LONG LIFE (105°C, 2000 HOURS)• LOW PROFILE AND HIGH DENSITY DESIGN OPTIONS • EXPANDED CV VALUE RANGE• HIGH RIPPLE CURRENT• CAN-TOP SAFETY VENT • DESIGNED AS INPUT FILTER OF SMPS• STANDARD 10mm (.400") SNAP-IN SPACING NRLMW SeriesSPECIFICATIONSNotice for MountingThe space from the top of the can shall be more than (3mm) from chassis or other construction materials so that safety vent has room to expand in case of emer g en c y.Sleeve Color: Dark BlueCan Top Safety VentInsulation Sleeve and Minus Polarity Marking(4.0mm Leads Available As Option)D+1Max.L ± 26.3 ± 10.810(-)(+)MAXIMUM EX P AN S IONFOR SAFETY VENT Approx. 3.0mmRecommended PC Board Mounting Holes:10 ± .1∅= 2 ± 0.1D ∅ ± 0.5ChassisPC BoardPRECAUTIONSPlease review the notes on correct use, safety and precautions found on pages T10 & T11of NIC’s Electrolytic Capacitor catalog . Operating Temperature Range-40 ~ +105°C -25 ~ +105°C Rated Voltage Range 10 ~ 250Vdc 450Vdc Rated Capacitance Range 180 ~ 68,000µF 56 ~ 470µF Capacitance Tolerance ±20% (M) at 120Hz, +20°CMax. Leakage Current (µA)After 5 minutes (20°C)3 x C(µF)VMax. Tan δat 120Hz/20°CW.V. (Vdc)10162535506380100 ~ 400450Tan δ max.0.550.450.350.300.250.200.170.150.20Surge VoltageW.V. (Vdc)10162535506380100160S.V. (Vdc)132032446379100125200W.V. (Vdc)180200250400450----S.V. (Vdc)220250300450500----Ripple Current Correction Factors Frequency (Hz)50601001205001K 10K ~ 50K --Multiplier at 85°C16 ~ 100Vdc0.930.950.99 1.0 1.05 1.08 1.15--160 ~ 450Vdc0.750.800.95 1.0 1.20 1.25 1.40-Low Temperature Stability (10 to 250Vdc)Temperature (°C)0-25-40------Capacitance Change -5%-10-30%------Impedance Ratio 1.539------Load Life Test 2,000 hours at +105°C Capacitance ChangeWithin ±20% of initial measured valueTan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Shelf Life Test 1,000 hours at +105°C(no load)Capacitance ChangeWithin ±20% of initial measured value Tan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Surge Voltage TestPer JIS-C-5141 (table #6, #4)Surge voltage applied: 30 seconds "On" and 5.5 minutes no voltage "Off"Capacitance ChangeWithin ±20% of initial measured value Tan δLess than 200% of speciﬁ ed maximum valueLeakage Current Less than speciﬁ ed maximum value Soldering EffectRefer toMIL-STD-202F Method 210ACapacitance ChangeWithin ±10% of initial measured valueTan δLess than speciﬁ ed maximum value Leakage CurrentLess than speciﬁ ed maximum valueRoHSCompliantincludes all homogeneous materials *See Part Number System for DetailsLarge Can Aluminum Electrolytic Capacitors NRLMW SeriesLarge Can Aluminum Electrolytic CapacitorsNRLMW SeriesNRLMW 471 M 250V 30X35 FRoHS compliant Case Size (mm) Voltage Rating Tolerance Code Capacitance Code SeriesPART NUMBER SYSTEM。

FMM22-05PF;中文规格书,Datasheet资料

© 2008 IXYS CORPORATION, All rights reservedN-Channel Power MOSFET Phase Leg TopologyDS100039(09/08)SymbolTest Conditions Characteristic Values Min. Typ. Max.C P Coupling capacitance between shorted 40 pFpins and mounting tab in the case d S ,d A pin - pin 1.7 mm d S ,d A pin - backside metal 5.5mmWeight9gFeatureszSilicon chip on Direct-Copper Bond (DCB) substrate- UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low Q Gz Low Drain-to-Tab capacitance zLow package inductanceAdvantagesz Low gate drive requirement z High power density z Fast intrinsic rectifierz Low drain to ground capacitance zFast switchingApplicationszDC and AC motor drivesz UPS, solar and wind power inverters z Synchronous rectifiersz Multi-phase DC to DC converters z Industrial battery chargers zSwitching power suppliesSymbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C500 V V DGR T J = 25°C to 150°C, R GS = 1M Ω 500VV GSS Continuous ± 30 V V GSM Transient ± 40 V I D25T C = 25°C13A I DM T C = 25°C, pulse width limited by T JM 55AI A T C = 25°C 22 AE AS T C = 25°C750 mJ dV/dt IS ≤ I DM , V DD ≤ V DSS ,T J ≤ 150°C 10 V/ns PDT C = 25°C132WSymbol Test Conditions Maximum Ratings T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C V ISOLD 50/60H Z , RMS, t = 1min, leads-to-tab 2500~V T L1.6mm (0.062 in.) from case for 10s 300°C T SOLD Plastic body for 10s260°C F CMounting force 20..120 / 4.5..27N/lb.DSSI D25= 13A R DS(on)≤ 270m Ωt rr(max)≤ 200nsISOPLUS i4-Pak TM15Source-Drain Diode Characteristic ValuesT = 25°C unless otherwise specified)Note 1: Pulse test, t≤ 300μs, duty cycle, d ≤ 2 %.ADVANCE TECHNICAL INFORMATIONThe product presented herein is under development. The Technical Specifications offered arederived from a subjective evaluation of the design, based upon prior knowledge and experience,and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the rightto change limits, test conditions, and dimensions without notice.IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405 B26,759,6927,063,975 B24,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B27,071,537分销商库存信息: IXYSFMM22-05PF。

VN2222LLRLRA中文资料

VN2222LLPreferred DeviceSmall Signal MOSFET 150 mAmps, 60 VoltsN−Channel TO−92Features•Pb−Free Packages are Available*Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Preferred devices are recommended choices for future use and best overall value.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICS (Note 1)DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 1)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.I D , D R A I N C U R R E N T (A M P S )I D , D R A I N C U R R E N T (A M P S )V DS , DRAIN− S OURCE VOLTAGE (VOLTS)0.8Figure 1. Ohmic RegionV GS, GATE −S OURCE VOLTAGE (VOLTS)0.8T, TEMPERATURE (°C)T, TEMPERATURE (°C)0.410.80.61.21.61.4, S T A T I C D R A I N −S O U R C E O N −R E S I S T A N C E D S (o n )r 21.82.22.40.70.850.80.750.910.951.11.051.151.2(N O R M A L I Z E D ), T H R E S H O L D V O L T A G E (N O R M A L I Z E D )G S (t h )V Figure 2. Transfer CharacteristicsFigure 3. Temperature versus Static Drain−Source On−Resistance Figure 4. Temperature versus GateThreshold VoltagePACKAGE DIMENSIONSSTYLE 22:PIN 1.SOURCE2.GATE3.DRAINNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.DIMMIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500−−−12.70−−−L 0.250−−− 6.35−−−N 0.0800.105 2.04 2.66P −−−0.100−−− 2.54R 0.115−−− 2.93−−−V0.135−−−3.43−−−TO−92CASE 29−11ISSUE ALON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

IXFH50N20中文资料

Symbol Test Conditions Maximum RatingsV DSS T J = 25°C to 150°C200V V DGR T J = 25°C to 150°C; R GS = 1 M W 200V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C42N2042A 50N2050A 58N2058A I DM T C = 25°C, pulse width limited by T JM 42N20168A 50N20200A 58N20232A I ART C = 25°C42N2042A 50N2050A 58N2058AE AR T C = 25°C30mJ dv/dt I S £ I DM , di/dt £ 100 A/m s, V DD £ V DSS ,5 V/nsT J £ 150°C, R G = 2 W P D T C = 25°C300W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L 1.6 mm (0.062 in.) from case for 10 s 300°CM d Mounting torque1.13/10Nm/lb.in.WeightTO-204 = 18 g, TO-247 = 6 gHiPerFET TMPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low t rr, HDMOS TM FamilySymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.V DSS V GS = 0 V, I D = 250 m A 200V V GS(th)V DS = V GS , I D = 4 mA 24V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSSV DS = 0.8 • V DSS T J = 25°C 200m A V GS = 0 VT J = 125°C1mAV DSSI D25R DS(on)200 V 42 A 60m W 200 V 50 A 45m W 200 V58 A 40m Wt rr £ 200 nsTO-247 AD (IXFH)TO-204 AE (IXFM)DGFeatures•International s tandard p ackages •Low R DS (on) HDMOS TM process•Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS)rated•Low package inductance -easy to drive and to protect •Fast intrinsic RectifierApplications•DC-DC converters•Synchronous r ectification •Battery chargers•Switched-mode a nd r esonant-mode power supplies •DC choppers •AC motor control•Temperature a nd l ighting c ontrols •Low voltage relaysAdvantages•Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)•High power surface mountable package •High power densityG = Gate, D = Drain,S = Source,TAB = Drain(TAB)STO-268 (D3) Case StyleIXFH/IXFM42N20IXFH/IXFM/IXFT50N20IXFH/IXFT58N20GSIXYS reserves the right to change limits, test conditions, and dimensions.91522H (2/98)(TAB)limeter InchesMin.Max.Min.Max.A19.8120.320.7800.800B20.8021.460.8190.845C15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F 5.4 6.20.2120.244G 1.65 2.130.0650.084H- 4.5-0.177J 1.0 1.40.0400.055K10.811.00.4260.433L 4.7 5.30.1850.209M0.40.80.0160.031N 1.5 2.490.0870.102limeter InchesMin.Max.Min.Max.A38.6139.12 1.520 1.540B-22.22-0.875C 6.4011.400.2520.449D 1.45 1.600.0570.063E 1.52 3.430.0600.13530.15BSC 1.187BSCG10.6711.170.4200.440H 5.21 5.710.2050.22516.6417.140.6550.675K11.1812.190.4400.480Q 3.84 4.190.1510.165R25.1626.660.991 1.050 Min. Recommended FootprintFig. 1Output CharacteristicsFig. 2 Input AdmittanceFig. 3R DS(on) vs. Drain CurrentFig. 4 Temperature Dependenceof Drain to Source ResistanceFig. 5Drain Current vs.Fig. 6 Temperature Dependence ofCase TemperatureBreakdown and Threshold VoltageT J - Degrees C-50-250255075100125150B V /V G (t h ) - N o r m a l i z e d0.50.60.70.80.91.01.11.2V GS(th)BV DSST C - Degrees C -50-250255075100125150I D - A m p e r e s0102030405060708058N2042N2050N20T J - Degrees C-50-25255075100125150R D S (o n ) - N o r m a l i z e d0.500.751.001.251.501.752.002.252.50I D - Amperes 0255075100125150175R D S (o n ) - N o r m a l i z e d0.81.01.21.41.61.82.02.22.42.6V GS - Volts012345678910I D - A m p e r e s102030405060708090100V DS - Volts 012345678910I D - A m p e r e s102030405060708090100Fig.9Capacitance CurvesFig.10 Source Current vs. Sourceto Drain VoltageFig.7Gate Charge Characteristic CurveFig.8Forward Bias Safe Operating AreaFig.11 Transient Thermal ImpedanceV DS - Volts110100I D - A m p e r e s110100Gate Charge - nCoulombs255075100125150175200V G E - V o l t s02468101214V SD - Volts0.40.60.8 1.0 1.2 1.4I D - A m p e r e s01020304050V DS - Volts 0510152025C a p a c i t a n c e - p F050010001500200025003000350040004500Time - Seconds0.000010.00010.0010.010.1110T h e r m a l R e s p o n s e - K /W0.0010.010.1C rssC oss C iss200T J = 125°CT J = 25°Cf = 1MHz V DS = 25V。

UNR2227中文资料

R1 VI R2 VB VV VA
f = 1 kHz V = 0.3 V Ron = VB × R L (Ω ) VA−VB
Common characteristics chart PT Ta
250
Total power dissipation PT (mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR2225 IC VCE
Collector-emitter saturation voltage VCE(sat) (mV)
400 Ta = 25°C
VCE(sat) IC
1 000 IC / IB = 10
hFE IC
250 VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
300
IB = 1.0 mA 0.9 mA 0.8 mA
200 Ta = 75°C 150 25°C −25°C 100
100
200
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
Collector-emitter saturation voltage Input resistance UNR2226 UNR2227 UNR2225 Resistance ratio UNR2227
Note) The part numbers in the parenthesis show conventional part number.

RN2202中文资料

Resistor ratio
RN2201~2206
RN2201 RN2202 RN2203 RN2204 RN2205 RN2206 RN2201 RN2202 RN2203 RN2204 RN2205 RN2206
RN2201~2206
RN2201 RN2202 RN2203 RN2204 RN2205 RN2206 RN2201~2204 RN2205, 2206 RN2201~2206
Characteristic
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

RECOM R5M 5W 隔离 DC DC 电源说明书

DC/DC ConverterDescriptionThe R5M is an isolated 5W DC/DC converter in a compact SMD package available with 4:1 inputs covering 12, 24 and 48V rails providing single or dual regulated, short-circuit protected outputs. There is no minimum load requirement. Isolation is 1.6kVDC/1min, and the operating temperature is from -40°C up to +50°C without derating. Class A and Class B EMC conformity requires only a few external components. Standard packaging is tube.FeaturesRegulated Converters•5W power in SMD package •4:1 Input voltage range •Efficiency up to 86%• 1.6kVDC/1min isolation •Regulated output•-40°C to +50°C at full load•Continuous short circuit protectedR5MSelection GuideModel NumberingY E A Rwa r r a n ty3RoHS 2+compliant 10 from 10Specifications (measured @ Ta= 25°C, nom. Vin, full load and after warm-up unless otherwise stated)Part Input nom. Output Output Efficiency max. CapacitiveNumber Voltage Range (1) Voltage Current typ. (2)Load(3)[VDC] [VDC] [mA] [%] [µF]R5M-xx3.3S/SMD 9-36, 18-75 3.3 1000 774400 R5Mxx05S/SMD 9-36, 18-75 5 1000 812200R5Mxx09S/SMD 9-36, 18-759 55582 1470R5M-xx12S/SMD 9-36, 18-7512 42084-851220 R5M-xx15S/SMD 9-36, 18-7515 333 85-861000R5M-xx24S/SMD 9-36, 18-7524 21082470R5M-xx05D/SMD 9-36, 18-75±5 ±500 82±1000 R5M-xx12D/SMD 9-36, 18-75±12 ±210 84±680 R5M-xx15D/SMD9-36, 18-75±15±168 85±440Notes:Note1: Refer to “Input Voltage Range”Note2: Efficiency is tested at nominal input and full load at +25°C ambient Note3: Max Cap Load is tested at nominal input and full resistive loadBASIC CHARACTERISTICSParameterConditionMin.Typ.Max.Input Voltage Range nom. V IN = 24VDC 9VDC 24VDC 36VDC nom. V IN = 48VDC18VDC48VDC75VDC Input Surge Voltage1 second max.nom. V IN = 24VDC 50VDC nom. V IN = 48VDC 100VDCcontinued on next pageCase Style S ingle/D ualnom. Input Voltage nom. Output VoltageR5M-/SMD5 WattSMDSingle & Dual Outputp re li mi n a rySpecifications (measured @ Ta= 25°C, nom. Vin, full load and after warm-up unless otherwise stated)Specifications (measured @ Ta= 25°C, nom. Vin, full load and after warm-up unless otherwise stated)REGULATIONSParameterConditionValueOutput Accuracy ±1.0% max.Line Regulationlow line to high line, full load±0.2% max.Load Regulation0% to 100% loadsingle 1% max.dual 1% max.10% to 90% loadsingle 0.5% max.dual0.8% max.Cross Regulation asymmetrical 25% / 100% load±5% max.Transient Response Recovery Time25% load step change±500µs typ.PROTECTIONSParameterTypeValueShort Circuit Protection (SCP)continuous, auto recoveryIsolation Voltage (5)I/P to O/P1 minute1.6kVDC min.Isolation Resistance I/P to O/P , V ISO = 500VDC 1G Ω min.Isolation CapacitanceI/P to O/P , 100kHz/0.1V50pF typ.Notes:Note5: This power module is not internally fused. An input line fuse must always be used Recom suggests: 24Vin=T1.25A; 48Vin=T0.63A slow blowp re li mSpecifications (measured @ Ta= 25°C, nom. Vin, full load and after warm-up unless otherwise stated)ENVIRONMENTALParameterConditionValueOperating Temperature Range with derating -40°C to +105°C without derating -40°C to +50°CMaximum Case Temperature measured at “tc point”+105°COperating Humidity non-condensing5% - 95% RH max.Thermal Shock according to MIL-STD-810FVibration according to MIL-STD-810FMTBFaccording to MIL-HDBK-217F, G.B.+25°C2959 x 10³ hoursDerating Graph(@ Chamber and natural convection 0.1m/s)-40-20020407060-30-101030508090120110100100806040907050302010O u t p u t L o a d [%]Ambient Temperature [°C]105i mi n a rySpecifications (measured @ Ta= 25°C, nom. Vin, full load and after warm-up unless otherwise stated)PACKAGING INFORMATIONParameterTypeValuePackaging Dimension (LxWxH)tube 218.0 x 17.2 x 19.9mmPackaging Quantity20pcsStorage Temperature Range non-condensing-55°C to +125°C Storage Humidity5% to 95% RH max.The product information and speciﬁcations may be subject to changes even without prior written notice.The product has been designed for various applications; its suitability lies in the responsibility of each customer. The products are not authorized for use in safety-critical applications without RECOM’s explicit written consent. A safety-critical application is an application where a failure may reasonably be expected to endanger or cause loss of life, inﬂict bodily harm or damage property. The applicant shall indemnify and hold harmless RECOM, its afﬁliated companies and its representatives against any damage claims in connection with the unauthorizeduse of RECOM products in such safety-critical applications.p r。

VIPer22A应用中文资料

AN2097应用说明VIPower:采用VIPer22A的10W空调开关电源1. 摘要新的空调机采用两个主低压输出给内部电子设备供电。

这两个主输出的低压分别是+12V和+5V。

低输出电压是由一个内部开关电源产生。

这个开关电源需要以下多个重要特性：效率高，重量轻，尺寸小，待机功耗低等。

设计人员利用VIPerX2系列产品可以开发出一个含有所有这些重要功能的电源，因此，该系列产品是开发空调应用的最理想的解决方案,特别是下文介绍的电路板是为改进图1所示的特性而专门开发的，本文在表1列举的技术规格方面讨论了空调开关电源应用。

表1：电气规格图1:电路板布局1. VIPERX2A 描述VIPerX2A 是一个单封装的产品，在同一颗芯片上整合了一个专用电流式PWM控制器和一个高压功率场效应MOS晶体管。

这种方法可以减少组件数量，降低系统成本，简化电路板设计。

因此，这个产品家族广泛用于离线开关式电源。

此外，该系列产品还采用微型的SMD封装 (SO-8)。

VIPer 系列的待机功耗（小于1W）符合蓝天使和能源之星等节能标准。

1.1. 一般特性VIPerx2A 产品采用ST的VIPower M0-3 高压专利技术，M0-3 高压技术利用一个P型掩埋层的方法，允许在同一颗芯片上集成低压系统（PWM）和电流垂直流动的功率级，如图2所示。

VIPerX2A 产品有以下一般特性:-自动热关断-高压启动电流源输入交流电压范围85-265Vac输出112V输出25V/400mA(连接输出1的线性稳压器)纹波电流<50mA连续电流输出电流（12V和5V）600mA峰值电流，小于5分钟待机功耗<1W-防止输出短路导致击穿故障的打嗝（HICCUP）模式-保证低负载条件下低功耗的突发模式而且，VIPower M0-3技术还可用于开发最小击穿电压为730V 的功率场效应MOS 晶体管。

表2说明了该产品在不同的封装和工作条件下的功率处理能力。

电容电气参数

贴片电容参数这类参数描述了电容采用的电介质材料类别，温度特性以及误差等参数，不同的值也对应着一定的电容容量的范围。

具体来说，就是：X7R常用于容量为3300pF~0.33uF的电容，这类电容适用于滤波，耦合等场合，电介质常数比较大，当温度从0°C变化为70°C时，电容容量的变化为±15%；Y5P与Y5V常用于容量为150pF~2nF的电容，温度范围比较宽，随着温度变化，电容容量变化范围为±10%或者+22%/-82%。

对于其他的编码与温度特性的关系，大家可以参考表4-1。

例如，X5R的意思就是该电容的正常工作温度为-55°C~+85°C，对应的电容容量变化为±15%。

表4-1 电容的温度与容量误差编码低温高温容值误差X：-55℃4：+65℃A：±1.0%Y：-30℃5：+85℃B：±1.5%Z：+10℃6：+105℃C：±2.2%7：+125℃D：±3.3%8：+150℃E：±4.7%9：+200℃F：±7.5%P：±10%R：±15%S：±22%T：+22 %~33%U：+22 %~56%V：+22 %~82%下面我们仅就常用的NPO、X7R、Z5U和Y5V来介绍一下它们的性能和应用以及采购中应注意的订货事项以引起大家的注意。

不同的公司对于上述不同性能的电容器可能有不同的命名方法，这里我们引用的是AVX公司的命名方法，其他公司的产品请参照该公司的产品手册。

NPO、X7R、Z5U和Y5V的主要区别是它们的填充介质不同。

在相同的体积下由于填充介质不同所组成的电容器的容量就不同，随之带来的电容器的介质损耗、容量稳定性等也就不同。

所以在使用电容器时应根据电容器在电路中作用不同来选用不同的电容器。

一 NPO电容器NPO是一种最常用的具有温度补偿特性的单片陶瓷电容器。

RLN22 NAMUR 隔离信号放大器 24 V DC 产品说明书

单通道或双通道NAMUR 隔离信号放大器24 V DC，带继电器信号输出应用•隔离信号放大器，用于二进制开关信号的传输•符合NAMUR（EN60947-5-6）的接近传感器输入和开路触点或带电阻性耦合元件的触点•电气3路隔离适合于安全相关应用，满足SIL 2功能安全等级要求，符合IEC 61508标准•选装配备电阻性耦合元件，用于机械开关触点的线路监测•输入回路的线路故障监测，如断路和短路（LFD），可分离通过电源和错误信息模块处的DIN 导轨总线连接头获取组错误信息•输出侧继电器触点作为信号输出，可通过DIP 开关选择动作方向（操作状态或静态电流状态）•应用于–40 … 60 °C (–40 … 140 °F)的环境温度下优势•外壳结构紧凑，宽度仅为：12.5 mm (0.49 in)•有防爆认证，允许选择安装在防爆2区•采用直插式接线端子，快速便捷完成接线；通过DIN 导轨总线连接头选配电源和错误信息模块Products Solutions Services技术资料RLN22NAMUR 隔离信号放大器TI01560K/28/ZH/02.21-00715777272021-10-19RLN222Endress+Hauser目录功能与系统设计 (3)产品描述 ..................................3可靠性....................................3输入 (3)类型......................................3输入数据.. (3)输出.....................................3继电器输出参数..............................3报警信号...................................3防爆连接参数................................4电气隔离...................................4电源.....................................4接线端子分配................................4连接电源...................................4性能参数...................................4接线端子...................................4性能参数 (5)响应时间 (5)安装 (5)安装位置...................................5安装DIN 盘装型设备 (5)环境条件 (5)重要环境条件................................5抗冲击性和抗振性............................5电磁兼容性（EMC） (5)机械结构 (6)设计及外形尺寸..............................6重量......................................6颜色......................................6材质........ (6)显示与操作单元 (7)现场操作...................................7真值表，单通道..............................8真值表，双通道 (8)订购信息..................................8附件.....................................9设备专用附件................................9服务专用附件.. (9)证书和认证 (9)CE 认证....................................9功能安全性.. (10)文档资料 (10)《简明操作指南》（KA）......................10《操作手册》（BA）.........................10《安全指南》（XA）.........................10补充文档资料...............................10RLN22Endress+Hauser 3功能与系统设计产品描述产品设计NAMUR 隔离放大器，单通道•在订购选项中选择“单通道转换触点”，单通道NAMUR 隔离信号放大器可配备电阻性耦合元件，用于操作接近开关（符合EN 60947-5-6（NAMUR）标准）、断开触点和机械触点。

舒尔 shure DFR22 中文说明书

12.
USE only with a cart, stand, tripod, bracket, or table
specified by the manufacturer, or sold with the
apparatus. When a cart is used, use caution when
moving the cart/apparatus combination to avoid
injury from tip-over.
13. UNPLUG this apparatus during lightning storms or when unused for long periods of time.
3. Phoenix and XLR connectors for each input and output 4. Compatible with USB to serial port converters. 5. Front and back panel RS232 ports:
PACKING LIST
15. DO NOT expose the apparatus to dripping and splashing. DO NOT put objects filled
with liquids, such as vases, on the apparatus.
16. The MAINS plug or an appliance coupler shall remain readily operable.
19. To reduce the risk of fire or electric shock, do not expose this apparatus to rain or moisture.

IRFR1205中文资料

IRFR/U1205HEXFET ®Power MOSFETDescription5/11/98ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 44 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 31 A I DMPulsed Drain Current 160P D @T C = 25°C Power Dissipation 107W Linear Derating Factor 0.71W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 210mJ I AR Avalanche Current25A E AR Repetitive Avalanche Energy 11mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsParameterTyp.Max.UnitsR θJC Junction-to-Case––– 1.4R θJA Junction-to-Ambient (PCB mount) **–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceD -P AK T O -252AA I-PA K TO -251AAl Ultra Low On-Resistance l Surface Mount (IRFR1205)l Straight Lead (IRFU1205)l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.PD - 91318BIRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205IRFR/U1205。

DDU222C-50M资料

5-TAP, HCMOS-INTERFACEDFIXED DELAY LINE(SERIES DDU222C)FEATURES PACKAGES• Five equally spaced outputs• Very narrow device (SIP package)• Stackable for PC board economy• Input & outputs fully CMOS interfaced & buffered• 10 T2L fan-out capabilityFUNCTIONAL DESCRIPTIONThe DDU222C-series device is a 5-tap digitally buffered delay line. Thesignal input (IN) is reproduced at the outputs (T1-T5), shifted in time by anamount given by the device dash number. For dash numbers less than40, the total delay of the line is measured from T1 to T5, with the nominalvalue given by the dash number. The nominal tap-to-tap delay incrementis given by 1/4 of this number. The inherent delay from IN to T1 is nominally 8.0ns. For dash numbers greater than or equal to 40, the total delay of the line is measured from IN to T5, with the nominal value given by the dash number. The nominal tap-to-tap delay increment is given by 1/5 of this number. SERIES SPECIFICATIONS• Minimum input pulse width: 40% of total delay• Output rise time:8ns typical• Supply voltage:5VDC ± 5%• Supply current:I CCL = 40µa typicalI CCH = 10ma typical• Operating temperature: 0° to 70° C• Temp. coefficient of total delay: 300 PPM/°CFunctional diagram for dash numbers < 40Functional diagram for dash numbers >= 40©1997 Data Delay Devicesdatadelaydevices, inc.®3VCC IN T1T2T3T4T5GNDDDU222F-xx CommercialDDU222F-xxM MilitaryPIN DESCRIPTIONSIN Signal InputT1-T5Tap OutputsVDD+5 VoltsGND GroundDASH NUMBER SPECIFICATIONSPartNumberTotalDelay (ns)Delay PerTap (ns)DDU222C-1010 ± 2.0 * 2.5 ± 1.0DDU222C-2020 ± 2.0 * 5.0 ± 2.0DDU222C-5050 ± 3.010.0 ± 3.0DDU222C-6060 ± 3.012.0 ± 3.0DDU222C-7575 ± 4.015.0 ± 3.0DDU222C-100100 ± 5.020.0 ± 3.0DDU222C-125125 ± 6.525.0 ± 3.0DDU222C-150150 ± 7.530.0 ± 3.0DDU222C-175175 ± 8.035.0 ± 4.0DDU222C-200200 ± 10.040.0 ± 4.0DDU222C-250250 ± 12.550.0 ± 5.0* Total delay is referenced to first tap outputInput to first tap = 8.0ns ± 2nsNOTE:Any dash number between 10 and 250 notshown is also available.APPLICATION NOTESHIGH FREQUENCY RESPONSEThe DDU222C tolerances are guaranteed for input pulse widths and periods greater than those specified in the test conditions. Although the device will function properly for pulse widths as small as 40% of the total delay and periods as small as 80% of the total delay (for a symmetric input), the delays may deviate from their values at low frequency. However, for a given input condition, the deviation will be repeatable from pulse to pulse. Contact technical support at Data Delay Devices if your application requires device testing at a specific input condition.POWER SUPPLY BYPASSINGThe DDU222C relies on a stable power supply to produce repeatable delays within the stated tolerances. A 0.1uf capacitor from VDD to GND, located as close as possible to the VDD pin, is recommended. A wide VDD trace and a clean ground plane should be used.DEVICE SPECIFICATIONSTABLE 1: ABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL MIN MAX UNITS NOTES DC Supply Voltage V DD-0.37.0VInput Pin Voltage V IN-0.3V DD+0.3VStorage Temperature T STRG-55150CLead Temperature T LEAD300C10 secTABLE 2: DC ELECTRICAL CHARACTERISTICS(0C to 70C, 4.75V to 5.25V)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESHigh Level Output Voltage V OH 3.98 4.4V V DD = 5.0, I OH = MAXV IH = MIN, V IL = MAX Low Level Output Voltage V OL0.150.26V V DD = 5.0, I OL = MAXV IH = MIN, V IL = MAX High Level Output Current I OH-4.0mALow Level Output Current I OL 4.0mAHigh Level Input Voltage V IH 3.15VLow Level Input Voltage V IL 1.35VInput Current I IH0.10µA V DD = 5.0PACKAGE DIMENSIONS.020.010TYP. DDU222C-xx (Commercial).005.010TYP. DDU222C-xxM (Military)DELAY LINE AUTOMATED TESTINGTEST CONDITIONSINPUT:OUTPUT:Ambient Temperature:25o C ± 3o C Load: 1 FAST-TTL Gate Supply Voltage (VDD):5.0V ± 0.1V C load :5pf ± 10%Input Pulse:High = 5.0V ± 0.1VThreshold:2.5V (Rising & Falling)Low = 0.0V ± 0.1VSource Impedance:50Ω Max.Rise/Fall Time: 5.0 ns Max. (measuredbetween 0.5V and 4.5V )Pulse Width:PW IN = 1.5 x Total Delay Period:PER IN = 10 x Total DelayNOTE:The above conditions are for test only and do not in any way restrict the operation of the device.Test Setup0.5V0.5VTiming Diagram For TestingT RISET FALLPER INPW INT RISET FALL2.5V 2.5V 4.5V 4.5V 2.5V2.5VV IHV ILV OHV OLINPUT SIGNALOUTPUT SIGNAL。