PE4456中文资料

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AO4456中文资料

AO4456中文资料

SymbolTyp Max 31405975R θJL 1624Maximum Junction-to-AmbientASteady-State °C/W Maximum Junction-to-LeadCSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient At ≤ 10s R θJA °C/W AO4456AO4456SymbolMin TypMaxUnits BV DSS 30V V DS =24V, V GS =0V0.0080.1T J =125°C920I GSS 0.1µA V GS(th)Gate Threshold Voltage 1.4 1.82.4V I D(ON)120A 3.8 4.6T J =125°C5.97.44.5 5.6m Ωg FS 112S V SD0.370.5V I S 5A C iss 64307716pF C oss 756pF C rss 352pFR g0.9 1.4ΩQ g (10V)96115Q g (4.5V)4453nC Q gs 17nC Q gd 13nC t D(on)17.5ns t r 10ns t D(off)56ns t f 10.5nst rr 2025ns Q rr26nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Total Gate Charge VGS=10V, VDS=15V, ID=20AGate Drain Charge V GS =0V, V DS =15V, f=1MHzSWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzTurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime m ΩV GS =4.5V, I D =20AI S =1A,V GS =0V V DS =5V, I D =20A Maximum Body-Diode + Schottky Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERSR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageV DS =V GS I D =250µA Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions I DSS Zero Gate Voltage Drain Current mA V DS =0V, V GS = ±12V Gate-Body leakage current Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =20A, dI/dt=300A/µsDrain-Source Breakdown Voltage On state drain currentI D =1mA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=300A/µs A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.C. The R θJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: June 2006AO4456AO4456AO4456。

PE塑料常用牌号物性表

PE塑料常用牌号物性表

缠绕膜制造用的牌号(掺入30%)强度高于LDPE 不含爽滑和开口掺2045G和5100G增加强度掺AFFINITY-OG增加韧性LLDPE缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE 缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE (6c)薄膜级LLDPE薄膜级LLDPE缠绕膜LLDPE (6c)缠绕膜LLDPE (6c)缠绕膜LLDPE(8C 线性)茂金属茂金属茂金属茂金属茂金属茂金属茂金属茂金属缠绕膜茂金属. 缠绕膜茂金属缠绕膜茂金属缠绕膜茂金属(6c)缠绕膜茂金属缠绕膜茂金属茂金属缠绕茂金属膜茂金属茂金属茂金属茂金属茂金属茂金属茂金属超低密度聚乙烯超低密度聚乙烯超低密度聚乙烯POE弹性体PE弹性体体PE弹性体PP弹性体弹性体弹性体薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE 薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE 薄膜LLDPE.级薄膜LLDPE级薄膜LLDPE级薄膜LLDPE级薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE缠绕膜LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE 薄膜级LLDPE 薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 薄膜级LLDPE薄膜LLDPE 级薄膜LLDPE 级薄膜LLDPE级薄膜LLDPE 级薄膜LLDPE 级薄膜LLDPE 级薄膜LLDPE 级薄膜LLDPE 级薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 薄膜LLDPE级薄膜级LLDPE薄膜级LLDPE薄膜级LLDPE 1820S1 印尼薄膜级LLDPE 201XV 福建联合薄膜级LLDPE 7087科威特EQUATE1薄膜级LLDPE 新加坡注塑级LLDPE注塑级LLDPE注塑LLDPE.级注塑LLDPE级注塑LLDPE级注塑LLDPE级注塑LLDPE级注塑LLDPE级. 注塑级LLDPE注塑级LLDPE高压花料挤出涂覆级LDPE注塑级LDPELDPE 注塑LDPE.级LDPE 注塑级LDPELDPELDPELDPE高压涂覆挤出级LDPE涂覆级LDPE涂覆LDPE.级涂覆级 LDPE注塑级LDPE挤出级LDPE挤出级 LDPE挤出级 LDPELDPE高压薄膜LDPELDPE.LDPELDPE高压重包装注塑级LDPELDPE LDPE LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE. 薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE 薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE 薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜级LDPE薄膜LDPE 级薄膜LDPE 级薄膜LDPE 级薄膜LDPE 级薄膜LDPE.级薄膜LDPE级薄膜LDPE级薄膜LDPE级薄膜LDPE. 级注塑级LDPE注塑级LDPE注塑级LDPE 注塑级LDPE注塑级LDPE注塑级LDPE注塑级LDPE注塑级LDPE注塑级LDPE涂覆级LDPE涂覆级LDPE涂覆级LDPE涂覆级LDPE涂覆级LDPE涂覆级LDPE 涂覆级LDPE涂覆级LDPE涂覆级LDPE 7008 美国陶氏薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE 薄膜级HDPE薄膜级HDPE 薄膜级HDPE薄膜级HDPE薄膜级HDPE薄膜级HDPE 薄膜级HDPE 薄膜级HDPE薄膜级HDPE注塑级HDPE 低压聚乙烯MI:5属于低熔指MI:10属于中熔指MI:20属于高熔指注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE 注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE注塑级HDPE 注塑级HDPE。

3336-52;3336-01;中文规格书,Datasheet资料

3336-52;3336-01;中文规格书,Datasheet资料

©2005-2011 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 13
Document No. 70-0033-05 │ UltraCMOS™ RFIC Solutions
/
PE3336
Product Specification
/
PE3336
Product Specification
Figure 2. Pin Configurations (Top View)
GND GND GND
48 47 46 45 44 43 42 41 40 39 38 37
D0, M0 D1, M1 D2, M2 D3, M3 VDD VDD S_WR, D4, M4 Sdata, D5, M5 Sclk, D6, M6 FSELS, D7, Pre_en GND FSELP, A0
3 GHz operation ÷10/11 dual modulus prescaler Internal phase detector Serial, parallel or hardwired
programmable
Pin compatible with PE3236 Ultra-low phase noise Available in a 7 x 7 mm 48-lead QFN
Table 1. Pin Descriptions (continued)
Pin No. Pin Name S_WR 7 D4 M4 Sdata 8 D5 M5 Sclk 9 D6 M6 FSELS 10 D7 Pre_en 11 GND FSELP 12 A0 Direct Serial E_WR 13 A1 M2_WR 14 A2 Smode 15 A3 16 17,18 19 20 21 22 Bmode VDD M1_WR A_WR Hop_WR Fin Direct ALL ALL Parallel Parallel Serial, Parallel ALL Input Input (Note 1) Input Input Input Input Direct Serial, Parallel Input Input Parallel Direct Parallel Input Input Input Enhancement register write. D[7:0] are latched into the enhancement register on the rising edge of E_WR. A Counter bit1. M2 write. D[3:0] are latched into the primary register (R[5:4], M[8:7]) on the rising edge of M2_WR. A Counter bit2. Selects serial bus interface mode (Bmode=0, Smode=1) or Parallel Interface Mode (Bmode=0, Smode=0). A Counter bit3 (MSB). Selects direct interface mode (Bmode=1). Power supply input. Input may range from 2.85 V to 3.15 V. Bypassing recommended. M1 write. D[7:0] are latched into the primary register (Pre_en, M[6:0]) on the rising edge of M1_WR. A write. D[7:0] are latched into the primary register (R[3:0], A[3:0]) on the rising edge of A_WR. Hop write. The contents of the primary register are latched into the secondary register on the rising edge of Hop_WR. Prescaler input from the VCO. 3.0 GHz max frequency. ©2005-2011 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 13 Input Input Parallel Direct ALL Parallel Input Input Input Parallel Direct Serial Input Input Input Parallel Direct Serial Parallel Direct Serial Input Input Input Input Input Input Interface Mode Serial Type Input Description Serial load enable input. While S_WR is “low”, Sdata can be serially clocked. Primary register data are transferred to the secondary register on S_WR or Hop_WR rising edge. Parallel data bus bit4 M Counter bit4 Binary serial data input. Input data entered MSB first. Parallel data bus bit5. M Counter bit5. Serial clock input. Sdata is clocked serially into the 20-bit primary register (E_WR “low”) or the 8-bit enhancement register (E_WR “high”) on the rising edge of Sclk. Parallel data bus bit6. M Counter bit6. Selects contents of primary register (FSELS=1) or secondary register (FSELS=0) for programming of internal counters while in Serial Interface Mode. Parallel data bus bit7 (MSB). Prescaler enable, active “low”. When “high”, Fin bypasses the prescaler. Ground. Selects contents of primary register (FSELP=1) or secondary register (FSELP=0) for programming of internal counters while in Parallel Interface Mode. A Counter bit0 (LSB). Enhancement register write enable. While E_WR is “high”, Sdata can be serially clocked into the enhancement register on the rising edge of Sclk.

PE静电膜物性表-模板

PE静电膜物性表-模板

【使用范围】该产品为微粘性保护膜,适用于需高温加工贴膜工序的材料或触摸屏玻璃、ITO 玻璃、导光板表面等高光板材的表面保护【构造】EVA结构:LDPE+ EVALDPE【产品特性】*透明度高,洁净度高,鱼眼细少无杂质。

*低粘性易粘贴、易剥离无残胶。

耐温性能好,粘性稳定。

【储存条件】建议储存在温度(25℃±10℃,湿度 60%±10%的环境下),严禁与有机溶剂等化学物质共同运输或储存,避免阳光照射和淋雨。

【保存期限】此产品在符合储存条件下,自生产日始保质期为一年。

*产品使用条件建议在温度15℃~35℃,湿度低于 80%。

超出此条件时,用户应先进行试验评估。

【注意事项】*剥离力的测试结果受板材本身粗糙度、不同材料表面能、胶水体系、原膜厚度等因素影响会有差异,应以贴板作最终确认。

*易引起残留的因素:①被贴物表面有油性物质;②接触挥发性溶剂;③强紫外光照射。

*被贴物表面受潮或清洁度差,会直接影响贴膜附着力。

*被贴物材质如有低分子量物质迁移表面,贴膜撕离后易有白雾状。

*被贴物上下工序有特殊表面处理,请使用前作出试验验证,需经过相关技术人员确认方可使用此产品。

1 / 2【产品外观】项目标准外观无明显色差、黑点、刮伤、气泡等异物(颗粒)∮>0.5mm ,不应允;0.2 mm<∮≤0.5mm,≤10 个/m2;∮<0.2 mm 不计;其他无凹陷撞击痕迹【性能指标】项目单位标准测试方法厚度μ m 60±5数位厚度测量仪宽度mm 客户指定宽度±2卷尺180°剥离强度(SUS)g/25mm 2±1GB/T2792 抗静电值Ω/ 表面电阻仪断裂伸长率TD%≥200GB/T1040.1 MD ≥180拉伸强度TDMpa≥17GB/T1040.1 MD ≥17高温高湿/ 无迁移、无残胶贴高光镜面板入 60℃恒温箱湿度 90%、24hrs 取出冷却后撕膜环测/ 无迁移、无残胶常温60℃/90%常温-20℃循环三次共计 36hrs耐候/ 无迁移、无残胶贴高光镜面板入70℃恒温箱烘 24 小时取出冷却后检测静置/ 无迁移、无残胶贴高光镜面板放置于仓库常温条件下,静置一周后撕膜* 以上检测数据为本公司于检测室内条件下的测试结果,仅供参考。

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