UMF21NTR;中文规格书,Datasheet资料

Transistors1/4Power management (dual transistors)EMF21 / UMF21N2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.z ApplicationPower management circuitz Features1) Power switching circuit in a single package.2) Mounting cost and area can be cut in half.z StructureSilicon epitaxial planar transistorz Equivalent circuitsz External dimensions (Units : mm)z Package, marking, and packaging specificationsType UMF21N UMT6F21TR 3000Package Marking CodeBasic ordering unit(pieces)EMF21EMT6F21T2R 8000Transistors2/4z Absolute maximum ratings (T a=25°C)Tr1Parameter∗1 Single pulse P W =1ms∗2 120mW per element must not be exceeded.Each terminal mounted on a recommended land.Symbol V CBO V CEO V EBO I C I CP P C Tj Tstg Limits −15−12−6−500150(TOTAL)150−55~+150−1.0∗1∗2Unit V V V mA A mW °C °CCollector-base voltage Collector-emitter voltage Emitter-base voltageCollector currentPower dissipationJunction temperatureRange of storage temperatureDTr2Parameter∗1 Characteristics of built-in transistor.∗2 Each terminal mounted on a recommended land.SymbolV CCV INI CI OP CTj Tstg Limits 50−10~+4010050150(TOTAL)150−55~+150∗1∗2UnitV V mA mA mW °C °CSupply voltage Input voltage Collector current Output current Power dissipation Junction temperatureRange of storage temperaturez Electrical characteristics (T a=25°C)Tr1ParameterSymbol Min.Typ.Max.Unit ConditionsV CB =−10V, I E =0mA, f =1MHzTransition frequencyf T −260−MHz V CE =−2V, I E =10mA, f =100MHz BV CEO −12−−V I C =−1mA Collector-emitter breakdown voltage BV CBO −15−−V I C =−10µA Collector-base breakdown voltage BV EBO −6−−V I E =−10µA Emitter-base breakdown voltage I CBO −−−100nA V CB =−15V Collector cut-off current I EBO −−−100nA V EB =−6VEmitter cut-off currentV CE(sat)−−100−250mV I C =−200mA, I B =−10mA Collector-emitter saturation voltage h FE 270−680−V CE =−2V, I C =−10mADC current gainCob−6.5−pFCollector output capacitanceDTr2ParameterSymbol V I(off)V I(on)V O(on)I I I O(off)R 1G I R 2/R 1f TMin.−3−−−7300.8−−−0.1−−10−12500.5−0.30.880.513−1.2−V V CC =5V, I O =100µA V O =0.3V, I O =10mA I O /I I =10mA/0.5mA V I =5VV CC =50V, V I =0V V O =5V, I O =5mAV CE =10V, I E =−5mA, f =100MHz∗V mA µA k Ω−−−−MHzTyp.Max.Unit ConditionsInput voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency∗ Transition frequency of the deviceTransistors3/4z Electrical characteristic curves Tr1BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagationcharacteristics C O L L E C T O R C U R R E N T : I C (m A )COLLECTOR CURRENT : I C (mA)Fig.2 DC current gain vs.collector currentD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.3 Collector-emitter saturation voltagevs. collector current ( Ι )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (m V )COLLECTOR CURRENT : I C (mA)Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.5 Base-emitter saturation voltage vs. collector currentB A S E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (m V )EMITTER CURRENT : I E (mA)Fig.6 Gain bandwidth productvs. emitter current1T R A N S I T I O N F R E Q U E N C Y : f T (M H z )101000100C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (pF )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.7 Collector output capacitancevs. collector-base voltage Emitter input capacitance vs. emitter-base voltageTransistors4/4DTr2I N P U T V O L T A G E : V I (o n ) (V )OUTPUT CURRENT : I O (A)Fig.1 Input voltage vs. output current(ON characteristics)INPUT VOLTAGE : V I(off) (V)O U T P U T C U R R E N T : I o (A )120050010020501025Fig.2 Output current vs. input voltage(OFF characteristics)OUTPUT CURRENT : I O (A)D C C U RR E N T G A I N : G IFig.3 DC current gain vs. outputcurrentOUTPUT CURRENT : I O (A)O U T P U T V O L T A G E: V O (o n ) (V )Fig.4 Output voltage vs. outputcurrentAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0分销商库存信息: ROHMUMF21NTR。