74HC00DB-T中文资料

handbook, halfpage
74HC00; 74HCT00
TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C
CODE SOT27-1 SOT27-1 SOT108-1 SOT108-1 SOT337-1 SOT337-1 SOT402-1 SOT402-1 SOT762-1 SOT762-1
1A 1B 1Y 2A 2B 2Y GND
1 2 3 4 5 6 7
MNA210
14 VCC 13 4B 12 4A
(1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.
Fig.2 Pin configuration DHVQFN14.
2003 Jun 30
5
元器件交易网
Philips Semiconductors
Product specification
Quad 2-input NAND gate
DC CHARACTERISTICS Type 74HC00 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C; note 1 VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 5.2 mA ILI IOZ ICC input leakage current VI = VCC or GND 3-state output OFF current VI = VIH or VIL; VO = VCC or GND quiescent supply current 2.0 4.5 6.0 4.5 6.0 6.0 6.0 − − − − − − − − 2.0 4.5 6.0 4.5 6.0 1.9 4.4 5.9 3.84 5.34 1.5 3.15 4.2 − − − VCC (V) MIN.
元器件交易网
Philips Semiconductors
Product specification
Quad 2-input NAND gate
FEATURES • Complies with JEDEC standard no. 8-1A • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns. DESCRIPTION
2003 Jun 30
2
元器件交易网
Philips Semiconductors
Product specification
Quad 2-input NAND gate
ORDERING INFORMATION PACKAGE TYPE NUMBER 74HC00N 74HCT00N 74HC00D 74HCT00D 74HC00DB 74HCT00DB 74HC00PW 74HCT00PW 74HC00BQ 74HCT00BQ PINNING PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SYMBOL 1A 1B 1Y 2A 2B 2Y GND 3Y 3A 3B 4Y 4A 4B VCC DESCRIPTION data input data input data output data input data input data output ground (0 V) data output data input data input data output data input data input supply voltage Fig.1
PINS 14 14 14 14 14 14 14 14 14 14
PACKAGE DIP14 DIP14 SO14 SO14 SSOP14 SSOP14 TSSOP14 TSSOP14 DHVQFN14 DHVQFN14
MATERIAL plastic plastic plastic plastic plastic plastic plastic plastic plastic plastic
74HC00; 74HCT00
The 74HC00/74HCT00 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC00/74HCT00 provide the 2-input NAND function.
74HC00; 74HCT00
handbook, halfpage
1A 1
VCC 14 13 12 4B 4A 4Y B 3B 3A
handbook, halfpage
1B 1Y 2A 2B 2Y
2 3 4 5 6 7 Top view GND 8 3Y
A Y
MNA211
GND(1)
11 10 9
MNA950
13
MNA246
Fig.4 Function diagram.
Fig.5 IEC logic symbol.
2003 Jun 30
4
元器件交易网
Philips Semiconductors
Product specification
Quad 2-input NAND gate
RECOMMENDED OPERATING CONDITIONS 74HC00 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V − − − TYP. 5.0 − − +25 MAX. 6.0 VCC VCC +125
74HC00; 74HCT00
74HCT00 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
− 6.0 −
1000 500 400Байду номын сангаас
− − −
− 6.0 −
− 500 −
ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC, IGND Tstg Ptot Note 1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C; note 1 VI < −0.5 V or VI > VCC + 0.5 V VO < −0.5 V or VO > VCC + 0.5 V −0.5 V < VO < VCC + 0.5 V CONDITIONS − − − − −65 − MIN. −0.5 MAX. +7.0 ±20 ±20 ±25 ±50 +150 500 V mA mA mA mA °C mW UNIT